KR200169320Y1 - A plasma coating device of electricity chuck of ceramic type - Google Patents
A plasma coating device of electricity chuck of ceramic type Download PDFInfo
- Publication number
- KR200169320Y1 KR200169320Y1 KR2019990017052U KR19990017052U KR200169320Y1 KR 200169320 Y1 KR200169320 Y1 KR 200169320Y1 KR 2019990017052 U KR2019990017052 U KR 2019990017052U KR 19990017052 U KR19990017052 U KR 19990017052U KR 200169320 Y1 KR200169320 Y1 KR 200169320Y1
- Authority
- KR
- South Korea
- Prior art keywords
- ceramic
- powder
- jig
- gas injection
- supplying
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Abstract
본 고안은 반도체 제조시 전공정 장비인 에처(etcher)나 시브디(CVD)의 플라스마 소스(plasma source)에 사용되는 세라믹 타입 정전척(electrostatic chuck)을 제조하는 장치에 관한 것으로, 복수의 계단부(16)를 갖추고서 코팅을 해야 하는 부위만 노출되도록 지지플레이트(17)에 고정된 마스크용 지그(13) 및, 이 지그(13)와 소정간격을 두고 설치된 제트건(14)을 구비하되, 이 제트건(14)은 애노드전극(18)과 캐소드전극(19), 가스주입부(20), 이들 가스주입부(20)와 애노드전극(18), 캐소드전극(19)을 전기적으로 절연시키기 위한 절연세라믹 (21) 및, 세라믹파우더를 공급할 수 있는 파우더공급부(22)를 갖추고 있다.The present invention relates to an apparatus for manufacturing a ceramic type electrostatic chuck used in the plasma source of the etching (etcher) or sieve dee (CVD), which is a pre-processing equipment for semiconductor manufacturing, And a mask jig 13 fixed to the support plate 17 and a jet gun 14 provided at a predetermined interval with the jig 13 so as to expose only a portion to be coated with (16), The jet gun 14 electrically insulates the anode electrode 18, the cathode electrode 19, the gas injection unit 20, the gas injection unit 20, the anode electrode 18, and the cathode electrode 19. And an insulating ceramic 21 for supplying powder and a powder supplying part 22 capable of supplying a ceramic powder.
Description
본 고안은 세라믹 타입 정전척(Ceramic type electrostatic chuck)을 제조하는 장치에 관한 것으로, 특히 코팅대상면을 고정할 수 있고 고정된 코팅면에 순간적으로 세라믹을 코팅할 수 있도록 되어 작업성을 향상시키고 제품의 균일성을 유지할 수 있도록 된 세라믹타입 정전척 제조용 플라즈마 코팅장치에 관한 것이다.The present invention relates to a device for manufacturing a ceramic type electrostatic chuck, in particular, it is possible to fix the surface to be coated and to be able to instantaneously coat the ceramic on the fixed coating surface to improve workability and product The present invention relates to a plasma coating apparatus for manufacturing a ceramic type electrostatic chuck, which is capable of maintaining uniformity.
이하 설명하는 정전척은 반도체 제조시 사용되는 에처(etcher) 및 시브이디 (CVD) 장비인 플라즈마 소오스(Plasma Source)에 사용하는 것이다.The electrostatic chuck described below is used for a plasma source, which is an etchant and CVD equipment used in semiconductor manufacturing.
정전척은 반도체 제조용 전공정 장비중 실리콘 웨이퍼(silicon wafer)의 에칭(Etching) 및 증착(CVD)공정에 사용되는 플라즈마 소오스 체임버 (Plasma Source Chamber)내에서 전위차로 인해 발생되는 유전분극현상(誘電分極現象)에 의한 정전기력(靜電氣力)의 제어원리를 이용하여 웨이퍼를 정밀하게 탈착시키는 기능을 한다.The electrostatic chuck is a dielectric polarization phenomenon caused by the potential difference in the plasma source chamber used for the etching and deposition of silicon wafers in the semiconductor manufacturing pre-processing equipment. It uses the control principle of electrostatic force by virtue of the function of desorption of wafer precisely.
한편, 정전척은 기판을 알루미늄으로 아노다이징(anodizing)한 다음 접착제로 폴리이미드(polyimide)와 동(cupper:Cu)으로 이루어진 전극동박을 순차적으로 적층하여 전체적으로 시이트(sheet)형태를 이루며, 일반적으로 다음과 같은 방법으로 제조된다.On the other hand, the electrostatic chuck anodizes the substrate with aluminum and then sequentially laminates electrode copper foil made of polyimide and cupper (Cu) with an adhesive to form a sheet as a whole. It is prepared in the same manner.
즉, 도 3에 개략적으로 도시된 것과 같이 알루미늄몸체(1)의 접착면을 세라믹으로 코팅하는 접착면 코팅단계와, 알루미늄몸체(2)에 코팅된 세라믹층(3)의 표면거칠기가 일정수준을 유지하도록 코팅표면을 연마하는 세라믹코팅면 샌딩단계, 이 샌딩단계를 거치면서 표면조도가 유지된 알루미늄 몸체(2)를 아노다이징 피막처리한 다음 전극(4)을 접착하고 그 위에 열경화성 접착필름(5)을 진공중에서 열압착하여 1차 접착필름(6)을 만드는 1차 필름접착단계, 폴리이미드 절연필름(7)에 도전성 구리가 진공증착된 필름(8)과 폴리이미드 절연필름(7-1)사이에 열경화성 접착필름(9)을 차례로 적층시킨 다음 진공 열 압착하여 단일의 2차 접착필름(10)을 만드는 2차 필름접착단계 및, 이 2차 접착필름(10)을 상기 1차 접착필름(6)위에 얹힌 다음 평면접착시켜 3차 접착필름(11)을 만드는 3차 필름접착단계를 순차적으로 거치게 되면 정전척(12)이 제조되도록 되어 있다.That is, as shown schematically in FIG. 3, the adhesive surface coating step of coating the adhesive surface of the aluminum body 1 with ceramic and the surface roughness of the ceramic layer 3 coated on the aluminum body 2 have a predetermined level. Ceramic coating surface sanding step of polishing the coating surface to maintain, anodizing an aluminum body (2) having a surface roughness during this sanding step, and then attach the electrode (4) and the thermosetting adhesive film (5) thereon Is a primary film bonding step of forming a primary adhesive film (6) by thermal compression in a vacuum, between the film (8) and the polyimide insulating film (7-1) in which conductive copper is vacuum deposited on the polyimide insulating film (7). Secondary film bonding step of laminating a thermosetting adhesive film (9) in turn and then vacuum thermocompression to make a single secondary adhesive film (10), and the secondary adhesive film (10) to the primary adhesive film (6) ) And then attach it to the third adhesive film ( 11) If the third film bonding step to make sequentially through the electrostatic chuck 12 is to be manufactured.
그런데, 상기한 방법에 따라 제조되는 정전척은, 알루미늄몸체의 접착면을 세라믹으로 코팅하는 장치가 별도로 마련되어 있지 않기 때문에 작업성이 저하되고 수작업으로 코팅작업을 함에 따라 코팅면이 불균일해져 제품의 품질이 저하된다는 문제가 있다.By the way, the electrostatic chuck manufactured according to the above-described method is not provided with a separate device for coating the adhesive surface of the aluminum body with ceramic, the workability is lowered and the coating surface becomes uneven as the coating work is performed by hand. There is a problem that this is lowered.
이에 본 고안은 상기와 같은 제반 문제점을 해결하기 위하여 안출된 것으로, 세라믹 코팅시 코팅대상면을 고정할 수 있고 고정된 코팅면에 순간적으로 세라믹을 코팅할 수 있게 되므로써 작업성 향상과 함께 제품의 균일성을 유지할 수 있으면서 코팅면의 수명이 저하되는 것을 최대한 방지하도록 된 세라믹타입 정전척 제조용 플라즈마 코팅장치를 제공함에 그 목적이 있다.Therefore, the present invention was devised to solve the above problems, and it is possible to fix the coating target surface during ceramic coating and to coat the ceramic on the fixed coating surface instantaneously, thereby improving workability and uniformity of the product. It is an object of the present invention to provide a plasma coating apparatus for manufacturing a ceramic type electrostatic chuck which is capable of maintaining the castle and preventing the life of the coated surface from being reduced as much as possible.
도 1은 본 고안에 따른 플라즈마 코팅장치를 설명하기 위한 개략도,1 is a schematic view for explaining a plasma coating apparatus according to the present invention,
도 2는 도 1에서의 A부 확대도,2 is an enlarged view of a portion A in FIG. 1;
도 3은 세라믹 타입 정전척을 제조하는 방법을 단계적으로 설명하기 위한 개략도이다.3 is a schematic view for explaining step by step a method of manufacturing a ceramic type electrostatic chuck.
1,2 --- 알루미늄몸체, 3 --- 세라믹층,1,2 --- aluminum body, 3 --- ceramic layer,
4 --- 전극, 5 --- 열경화성 접착필름,4 --- electrode, 5 --- thermosetting adhesive film,
6 --- 1차 접착필름, 7,7-1 --- 폴리이미드 절연필름,6 --- primary adhesive film, 7,7-1 --- polyimide insulation film,
8 --- 필름, 9 --- 열경화성 접착필름,8 --- film, 9 --- thermosetting adhesive film,
10 --- 2차 접착필름, 11 --- 3차 접착필름,10 --- secondary adhesive film, 11 --- tertiary adhesive film,
12 --- 정전척, 13 --- 마스크용 지그,12 --- electrostatic chuck, 13 --- jig for mask,
14 --- 제트 건, 15 --- 플라즈마 코팅장치,14 --- jet gun, 15 --- plasma coating equipment,
16 --- 계단부, 17 --- 지지플레이트,16 --- step, 17 --- support plate,
18 --- 애노드전극, 19 --- 캐소드전극,18 --- anode electrode, 19 --- cathode electrode,
20 --- 가스주입부, 21 --- 절연세라믹,20 --- gas inlet, 21 --- insulated ceramic,
22 --- 파우더공급부,22 --- powder supply,
상기와 같은 목적을 달성하기 위한 본 고안은, 복수의 계단부를 갖추고서 코팅을 해야 하는 부위만 노출되도록 지지플레이트에 고정된 마스크용 지그 및, 이 지그와 소정간격을 두고 설치된 제트건을 구비하되, 이 제트건은 애노드전극과 캐소드전극, 가스주입부, 이들 가스주입부와 애노드전극, 캐소드전극을 전기적으로 절연시키기 위한 절연세라믹 및, 세라믹파우더를 공급할 수 있는 파우더공급부를 갖춘 제트건을 갖추고 있다.The present invention for achieving the above object is provided with a mask jig fixed to the support plate to expose only the portion to be coated with a plurality of steps, and the jig installed at a predetermined interval with the jig, The jet gun has an anode electrode, a cathode electrode, a gas injection unit, an insulating ceramic for electrically insulating the gas injection unit and the anode electrode, and a cathode electrode, and a jet gun having a powder supply unit for supplying ceramic powder.
이하 본 고안을 첨부된 예시도면에 의거 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
본 고안은 도면에 도시된 것과 같이, 마스크용 지그(13) 및 이 마스크용 지그(13)로부터 소정 간격만큼 떨어진 위치에 설치된 플라즈마 아아크 제트 건 (Plasma Arc Jet Gun:14:이하 제트건이라 함)을 갖춘 플라즈마 코팅장치(15)를 매개로 알루미늄 몸체(1,2)의 접착면을 세라믹으로 코팅하도록 되어 있는 바, 여기서 상기 마스크용 지그(13)는 알루미늄 몸체(1,2)와 동일형상을 이루도록 복수의 계단부(16)를 갖추고서 지지플레이트(17)에 보울트(도시되지 않음)와 같은 공지의 체결수단을 매개로 코팅을 해야 하는 부위만 노출되는 형태로 양쪽 측부가 고정되도록 되어 있다.The present invention is a plasma arc jet gun (hereinafter referred to as "Plasma Arc Jet Gun 14") installed at a position spaced apart from the mask jig 13 and the mask jig 13 by a predetermined distance, as shown in the drawing. The adhesive surface of the aluminum body (1, 2) is coated with a ceramic by means of a plasma coating device 15, wherein the mask jig (13) has the same shape as the aluminum body (1, 2) Both sides are fixed to the support plate 17 in such a way that only a portion to be coated on the support plate 17 is exposed through a known fastening means such as a bolt (not shown).
또한 상기 제트건(14)은 지그(13)와 소정간격을 두고 설치되어 고온의 융점을 가진 세라믹 파우더를 순간적으로 녹여 코팅하고자 하는 표면으로 분사시키도록 되어 있는데, 상기 제트건(14)은 냉각수와 DC전원을 동시에 공급할 수 있는 애노드 (Anode)전극(18)과 캐소드(Cathode)전극(19), 아르곤(Ar)가스를 공급할 수 있는 가스주입부(20), 이들 가스주입부(20)와 애노드전극(18), 캐소드전극(19)을 전기적으로 절연시키기 위한 절연세라믹(21) 및 세라믹파우더를 공급할 수 있는 파우더공급부(22)를 갖추고 있다.In addition, the jet gun 14 is installed at a predetermined interval with the jig 13 to instantaneously melt the ceramic powder having a high melting point and spray it onto the surface to be coated. An anode electrode 18 and a cathode electrode 19 capable of supplying DC power at the same time, a gas injection part 20 capable of supplying argon (Ar) gas, these gas injection parts 20 and the anode An insulating ceramic 21 for electrically insulating the electrode 18, the cathode electrode 19, and a powder supply unit 22 capable of supplying a ceramic powder are provided.
따라서, 공급된 아르곤가스에 의해 아아크가 방전되면서 플라즈마가 발생할 때 상기 파우더 공급부(22)로 분말형태의 세라믹을 공급하게 되면, 플라즈마 내부의 강한 압력과 고온에 의한 폭발성 에너지에 의해 도 2에 도시된 것과 같이 세라믹 파우더가 순간적으로 용융되면서 음속에 가까운 속력으로 분사되므로, 마스크용 지그(13)를 매개로 코팅부위만 노출된 상태로 설치된 알루미늄 몸체(1,2)의 접착면이 세라믹으로 균일하게 코팅되게 된다.Therefore, when the arc is discharged by the supplied argon gas and the powder is supplied to the powder supply part 22 when the plasma is generated, it is shown in FIG. As the ceramic powder is melted instantly and sprayed at a speed close to the speed of sound, the adhesive surfaces of the aluminum bodies 1 and 2 installed with only the coating part exposed through the mask jig 13 are uniformly coated with ceramic. Will be.
한편 상기 세라믹 파우더는 Al2O3(산화알루미늄)와 TiO2(산화티탄)가 혼합된 것을 사용하는 것이 바람직하다.Meanwhile, the ceramic powder is preferably a mixture of Al 2 O 3 (aluminum oxide) and TiO 2 (titanium oxide).
또한 접착면 코팅단계 이후에 행해지는 코팅면 샌딩단계에서는 복수의 연마석을 이용하여 알루미늄몸체의 세라믹코팅층을 일정한 힘으로 누르면서 연마하여 알루미늄몸체와의 결합력을 향상시키면서 세라믹코팅층이 일정한 두께를 유지하도록 함으로써 알루미늄과 세라믹코팅층의 열팽창차이로 인해 크랙이 발생하는 것을 방지하도록 되어 있다.In addition, in the coating surface sanding step performed after the adhesive surface coating step, the ceramic coating layer of the aluminum body is polished by using a plurality of abrasive stones while pressing the ceramic coating layer with a constant force to improve the bonding force with the aluminum body while maintaining the constant thickness of the ceramic coating layer. The crack is prevented from occurring due to the difference in thermal expansion of the ceramic coating layer.
한편 본 고안에 따른 플라즈마 코팅장치는 상기한 구조에만 국한되는 것이 아니며, 본 고안의 요지가 변하지 않는 범위내에서 다양하게 변경실시할 수 있슴은 물론이다.On the other hand, the plasma coating apparatus according to the present invention is not limited to the above-described structure, of course, can be variously changed within the scope of the present invention does not change.
이상에서 설명한 바와 같이 본 고안 세라믹 타입 정전척 제조용 플라즈마 코팅장치에 따르면, 작업성 향상과 함께 제품의 균일성을 유지할 수 있으면서 코팅면의 수명이 저하되는 것이 최대한 방지되는 잇점이 있다.As described above, according to the plasma coating apparatus for manufacturing the ceramic type electrostatic chuck of the present invention, it is possible to maintain the uniformity of the product while improving the workability and to prevent the life of the coated surface from being reduced as much as possible.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019990017052U KR200169320Y1 (en) | 1999-08-18 | 1999-08-18 | A plasma coating device of electricity chuck of ceramic type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019990017052U KR200169320Y1 (en) | 1999-08-18 | 1999-08-18 | A plasma coating device of electricity chuck of ceramic type |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR200169320Y1 true KR200169320Y1 (en) | 2000-02-15 |
Family
ID=19585128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019990017052U KR200169320Y1 (en) | 1999-08-18 | 1999-08-18 | A plasma coating device of electricity chuck of ceramic type |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR200169320Y1 (en) |
-
1999
- 1999-08-18 KR KR2019990017052U patent/KR200169320Y1/en not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20200325073A1 (en) | Slurry plasma spray of plasma resistant ceramic coating | |
| JP6278584B2 (en) | Plasma-resistant coating for plasma chamber parts | |
| KR102294960B1 (en) | Plasma erosion resistant rare-earth oxide based thin film coatings | |
| US20150311043A1 (en) | Chamber component with fluorinated thin film coating | |
| CN100411133C (en) | Substrate-placing platform, substrate processing device and production method of substrate-placing platform | |
| KR100460143B1 (en) | Process chamber for using semiconductor fabricating equipment | |
| KR101828862B1 (en) | Plasma processing apparatus and shower head | |
| CN105990081A (en) | Plasma processing device and manufacturing method thereof | |
| WO2018151892A1 (en) | Surface coating for plasma processing chamber components | |
| JP2022520784A (en) | Electrostatic chuck with ceramic monolithic body | |
| US20030180556A1 (en) | Corrosive-resistant coating over aluminum substrates for use in plasma deposition and etch environments | |
| CN112553592A (en) | Method for processing electrostatic chuck by using ALD (atomic layer deposition) process | |
| US20220186354A1 (en) | Surface coating treatment | |
| JPH10303286A (en) | Electrostatic chuck and semiconductor manufacturing equipment | |
| JP4181069B2 (en) | Plasma processing equipment | |
| KR200169320Y1 (en) | A plasma coating device of electricity chuck of ceramic type | |
| JPWO2008032627A1 (en) | Dry etching method | |
| KR100315147B1 (en) | Process for preparing static electricity chuck of ceramic type | |
| US20050199183A1 (en) | Plasma processing apparatus | |
| JPH10321559A (en) | Manufacture of semiconductor device | |
| KR20010063394A (en) | Ceramic Coating Method And Coated Ceramic On It's Surface | |
| KR100677169B1 (en) | The Electrostatic Churk for Flat Panel Display | |
| US20230223240A1 (en) | Matched chemistry component body and coating for semiconductor processing chamber | |
| US20220246404A1 (en) | Sealant coating for plasma processing chamber components | |
| KR200367932Y1 (en) | Electro-Static Chuck for semiconductor and liquid circuit display(LCD) panel manufacturing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| REGI | Registration of establishment | ||
| T201 | Request for technology evaluation of utility model | ||
| EXTG | Extinguishment | ||
| T601 | Decision on revocation of utility model registration |