KR200165011Y1 - Output buffer with low noise and high drive capability - Google Patents

Output buffer with low noise and high drive capability Download PDF

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Publication number
KR200165011Y1
KR200165011Y1 KR2019990001200U KR19990001200U KR200165011Y1 KR 200165011 Y1 KR200165011 Y1 KR 200165011Y1 KR 2019990001200 U KR2019990001200 U KR 2019990001200U KR 19990001200 U KR19990001200 U KR 19990001200U KR 200165011 Y1 KR200165011 Y1 KR 200165011Y1
Authority
KR
South Korea
Prior art keywords
output buffer
low noise
drive capability
high drive
capability
Prior art date
Application number
KR2019990001200U
Other languages
Korean (ko)
Inventor
Yuchang Lin
Original Assignee
Mosel Vitelic Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019950035247A external-priority patent/KR960043524A/en
Application filed by Mosel Vitelic Inc filed Critical Mosel Vitelic Inc
Priority to KR2019990001200U priority Critical patent/KR200165011Y1/en
Application granted granted Critical
Publication of KR200165011Y1 publication Critical patent/KR200165011Y1/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01Modifications for accelerating switching
    • H03K19/017Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01721Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00346Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/0185Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507Interface arrangements
    • H03K19/018521Interface arrangements of complementary type, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
KR2019990001200U 1995-05-23 1999-01-28 Output buffer with low noise and high drive capability KR200165011Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019990001200U KR200165011Y1 (en) 1995-05-23 1999-01-28 Output buffer with low noise and high drive capability

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US44736795A 1995-05-23 1995-05-23
KR1019950035247A KR960043524A (en) 1995-05-23 1995-10-13 Output buffering device
KR2019990001200U KR200165011Y1 (en) 1995-05-23 1999-01-28 Output buffer with low noise and high drive capability

Publications (1)

Publication Number Publication Date
KR200165011Y1 true KR200165011Y1 (en) 2000-03-15

Family

ID=27349232

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019990001200U KR200165011Y1 (en) 1995-05-23 1999-01-28 Output buffer with low noise and high drive capability

Country Status (1)

Country Link
KR (1) KR200165011Y1 (en)

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