KR200162913Y1 - Apparatus for heat exchange of semiconductor process - Google Patents
Apparatus for heat exchange of semiconductor process Download PDFInfo
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- KR200162913Y1 KR200162913Y1 KR2019940003190U KR19940003190U KR200162913Y1 KR 200162913 Y1 KR200162913 Y1 KR 200162913Y1 KR 2019940003190 U KR2019940003190 U KR 2019940003190U KR 19940003190 U KR19940003190 U KR 19940003190U KR 200162913 Y1 KR200162913 Y1 KR 200162913Y1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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Abstract
본 고안은 반도체 제조장비의 열교환장치에 관한 것으로서, 특히 열교환기로부터 다수의 배관을 통해 배출되는 순수를 일정한 유량과 압력으로 배출되게 하여 정밀한 반도체 장치를 생산할 수 있도록하는 반도체 제조장비의 열교환장치에 관한것이다.The present invention relates to a heat exchanger of a semiconductor manufacturing equipment, and more particularly to a heat exchanger of a semiconductor manufacturing equipment to produce a precise semiconductor device by discharging the pure water discharged through a plurality of pipes from a heat exchanger at a constant flow rate and pressure. will be.
이를 위하여 순수를 소정온도로 상승시켜 분배기와 다수의 송수관을 통해 프로세스 챔버에 공급하는 반도체 제조장비의 열교환장치에 있어서, 상기 다수의 송수관 각각에 레큘레이터와 유량계 및 유량센서를 설치하여 챔버내부에 유입되는 온수의 압력을 동일하게 유지하고, 압력확인과 이상발생을 감지토록 된 것이다.To this end, in a heat exchange apparatus of a semiconductor manufacturing equipment for raising pure water to a predetermined temperature and supplying it to a process chamber through a distributor and a plurality of water pipes, a plurality of water pipes are provided with a recurator, a flow meter, and a flow sensor to flow into the chamber. The pressure of the hot water is kept the same, and the pressure is checked and an abnormality is detected.
Description
제1도는 종래 반도체 제조장비의 열교환 장치의 구성도1 is a block diagram of a heat exchanger of a conventional semiconductor manufacturing equipment
제2도는 본고안에 따른 반도체 제조장비의 열교환 장치의 구성도2 is a block diagram of a heat exchanger of semiconductor manufacturing equipment according to the present proposal
* 도면 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of drawings
1 : 순수탱크 2 : 펌프1: pure water tank 2: pump
3 : 압력계 4 : 배분기3: pressure gauge 4: distributor
5 : 밸브 6 : 집수기5: valve 6: water collector
10 : 열교환기 20 : 챔버어셈블리10: heat exchanger 20: chamber assembly
21~23 : 제 1내지 제 3챔버 40a~40c : 레굴레이터(Regulator)21 ~ 23: 1st to 3rd chamber 40a ~ c: Regulator
50a~50c : 유량계(Flow Meter) 60a~60c : 유량센서(Flow Sensor)50a ~ 50c: Flow Meter 60a ~ 60c: Flow Sensor
본 고안은 반도체 제조장비의 열교환장치에 관한 것으로서, 특히 열교환기로부터 다수의 송수관을 통해 배출되는 일정온도(60℃~70℃)의 온수의 압력을 일정하게 조절하여 일정한 유량으로 배출되게 하므로서 균일하고, 정밀도가 높은 CVD 박막을 제조할 수 있도록 하며, 유량의 확인 기능 및 유량 이상에 의한 장비 파손을 예방하는 기능을 갖춘 반도체 제조장비의 열교환장치에 관한 것이다.The present invention relates to a heat exchanger of semiconductor manufacturing equipment, and in particular, by uniformly adjusting the pressure of hot water discharged from the heat exchanger through a plurality of water pipes at a constant flow rate (60 ℃ ~ 70 ℃) to be discharged at a constant flow rate and In addition, the present invention relates to a heat exchanger of a semiconductor manufacturing equipment having a function of confirming a flow rate and preventing equipment damage due to an abnormal flow rate.
일반적으로 반도체 제조장비의 열교환장치는 반도체 장치(Semiconductor Device)의 제조공정시 반도체 웨이퍼의 표면에 CVD 박막 증착 공정이 진행되는 공정 챔버(Process Chamber)의 외벽(Outer Sides)에 온수를 공급하는 장치로서 그 구성은 제 1도에 도시된 바와 같이 순수탱크(1)의 하부에는 배관을 통해 펌프(2)와 압력계(3)및 배분기(4), 그리고 밸브(5)가 설치되어 상기 순수탱크(1)의 상부로 귀환되도록 되어 있으며, 상기 배분기(4)의 일측에는 다수의 송수관(30a~30c)을 통해 CVD 박막 증착 장비인 챔버 어셈블리(20)에 설치된 다수의 제 1내지 제 3챔버(21~23)에 공급되며, 상기 제 1내지 제 3챔버(21~23)의 배출구에는 배관을 통해 집수기(6)와 연결되어 있다.In general, the heat exchanger of semiconductor manufacturing equipment is a device that supplies hot water to the outer side of a process chamber where a CVD thin film deposition process is performed on the surface of a semiconductor wafer during a manufacturing process of a semiconductor device. As shown in FIG. 1, the pump 2, the pressure gauge 3, the distributor 4, and the valve 5 are installed in the lower portion of the pure water tank 1 through a pipe, so that the pure water tank 1 is installed. ) And a plurality of first to third chambers 21 to 21 installed on the chamber assembly 20 which is a CVD thin film deposition apparatus through a plurality of water pipes 30a to 30c on one side of the distributor 4. 23 is supplied to the outlet of the first to third chambers 21 to 23 and is connected to the water collector 6 through a pipe.
상기와 같이 이루어지는 종래 반도체 제조장비의 열교환장치는, 시스템 메인 콘트롤러(도시안함)의 명령에 의해 순수탱크(1)에 저장된 순수가 약 60℃~70℃의 온도로 상승되어 온수로 되고, 상기 온수를 펌프(2)구동에 의해 배분기(4)로 강제 공급하게 된다.In the heat exchange apparatus of the conventional semiconductor manufacturing equipment as described above, the pure water stored in the pure water tank 1 is raised to a temperature of about 60 ℃ to 70 ℃ by the command of the system main controller (not shown) to become hot water, Is forcibly supplied to the distributor 4 by driving the pump 2.
한편 배분기(4)에 공급된 온수는 다수의 송구관(30a~30c)을 통해 챔버 어셈블리(20)에 설치된 제 1내지 제 3챔버(23)외벽을 순환한 후 집수기(6)에서 합해져 순수탱크(1)로 귀환되며, 제 1 내지 제 3챔버(21~23)의 외벽을 순환하는 온수의 유량차이(챔버 외벽의 위치별에 따른)등으로 인하여 챔버의 내부온도가 상승됨으로서 챔버 내부에 안치된 웨이퍼 표면에 파티클(Particle)발생 및 CVD박막 두께의 균일도, 정밀도등에 나쁜 영향을 준다.Meanwhile, the hot water supplied to the distributor 4 is circulated through the outer walls of the first to third chambers 23 installed in the chamber assembly 20 through the plurality of inlet pipes 30a to 30c, and then combined in the water collector 6 to obtain pure water. The internal temperature of the chamber is increased due to the flow rate difference (depending on the position of the chamber outer wall) of the hot water circulating back to the tank 1 and circulating the outer walls of the first to third chambers 21 to 23. Particle generation, uniformity and precision of CVD thin film thickness are adversely affected on the deposited wafer surface.
상기와 같은 반도체 제조장비의 열교환 장치는, 열교환기에서 다수의 챔버로 공급된는 온수의 양이 배분기(4)의 압력차로 인해 동일하게 공급되지 못하고, 이로인해 프로세스 조건이 변화하여 다수의 챔버내부에 안치된 웨이퍼상에 균일한 CVD 박막이 형성될 수 없을 뿐만 아니라 실제로 각 챔버에 유입되는 온수의 양을 육안으로 확인하기 어려워 인터 록(inter lock)이 발생할 경우에 원인 추척이 불가능하며 유량이 한쪽 송수관에 과도하게 계속 흐르면 배관 파열등 장비에 파손이 발생할 수있다.In the heat exchange apparatus of the semiconductor manufacturing equipment as described above, the amount of hot water supplied from the heat exchanger to the plurality of chambers is not equally supplied due to the pressure difference between the distributors 4, and thus, the process conditions change, and thus, Not only can a uniform CVD thin film not be formed on the deposited wafer, but it is also difficult to visually check the amount of hot water flowing into each chamber, so it is impossible to trace the cause when an interlock occurs. Excessive continuous flow can damage equipment such as pipe rupture.
본 고안은 상기와 같은 문제점을 해소하기 위해 열교환기의 배분기에서 프로세스챔버로 온수를 공급하는 각각의 송수관에 각 송수관에 배분된 온수의 압력을 조절하여 각 송수관에 흐르는 상기 온수의 양을 일정하게 하므로서 상기 프로세스챔버의 외벽에 일정한 유량의 온수가 흐르도록 하는 레귤레이터와, 각 송수관에 흐르는 온수의 양을 용이하게 확인하게 하여 인터록(inter lock)발생시 원인추적을 가능케 하는 유량계와, 각 송수관에 흐르는 온수의 양을 감지하여 설정치에서 벗어나면 메인 콘트롤러에서 인터록(Iner Lock)신호를 보내도록 하여 장비 파손을 예방하는 유량 센서를 구비하여 프로세스 챔버 내에서의 균일한 CVD 박막 형성 및 각 송수관을 흐르는 유량의 확인이 가능하고 인터록 발생시 원인 추적이 용이하며, 유량 이상으로 인한 장비의 파손을 방지할 수 있는 반도체 제조장비의 열 교환 장치를 제공하는데 본 고안의 목적이 있는 것이다.The present invention is to solve the above problems by adjusting the pressure of the hot water distributed to each water pipe to each water pipe for supplying hot water from the distributor of the heat exchanger to the process chamber so that the amount of hot water flowing through each water pipe to be constant The regulator allows the hot water of a constant flow rate to flow through the outer wall of the process chamber, the flow meter which makes it easy to check the amount of hot water flowing in each water pipe, and enables the cause tracking when an interlock occurs, and the hot water flowing in each water pipe. It is equipped with a flow sensor that detects the quantity and sends an interlock (Iner Lock) signal from the main controller when it is out of the set value to prevent equipment damage.This ensures uniform CVD thin film formation in the process chamber and confirmation of the flow rate through each water pipe. It is possible to easily trace the cause when an interlock occurs and It is an object of the present invention to provide a heat exchange device of a semiconductor manufacturing equipment that can prevent damage.
이하 첨부된 도면에 의해 본 고안의 구체적인 실시예를 상세히 설명하면 다음과 같다.Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.
제 2도는 본 고안에 따른 반도체 제조장비의 열교환 장치의 구성도로서, 순수탱크(1)의 하부에는 배관을 통해 펌프(2)와 압력계(3) 및 배분기(4), 그리고 밸브(5)가 설치되어 상기 순수탱크(1)의 상부로 귀환되도록 되어 있으며, 상기 배분기(4)의 일측에는 다수의 송수관(30a~30c)이 설치되고, 상기 다수의 송수관(30a~30c)각각에는 레굴레이터(40a~40c), 유량계(50a~50c), 유량센서(60a~60c)를 통해 CVD 박막 형성장비인 챔버어셈블리(20)에 설치된 다수의 제 1내지 제 3챔버(21~23)의 외벽에 공급되며, 상기 제 1내지 제 3챔버(21~23)의 외벽 배출구에는 배관을 통해 접수기(6)와 연결되어 있다.2 is a block diagram of a heat exchanger of a semiconductor manufacturing apparatus according to the present invention, the pump 2, the pressure gauge 3, the distributor 4, and the valve 5 through the pipe in the lower portion of the pure water tank (1) It is installed to be returned to the upper portion of the pure water tank (1), a plurality of water pipes (30a ~ 30c) is installed on one side of the distributor (4), each of the plurality of water pipes (30a ~ 30c) is a regulator ( 40a to 40c, flow meters 50a to 50c, and flow sensors 60a to 60c are supplied to the outer walls of the plurality of first to third chambers 21 to 23 installed in the chamber assembly 20, which is a CVD thin film forming apparatus. The outer wall outlets of the first to third chambers 21 to 23 are connected to the receiver 6 through pipes.
상기와 같이 이루어진 본 고안은, 먼저 미도시된 시스템 메인 콘트롤러의 명령에 의해 순수탱크(1)에 저장된 순수가 약60~70℃의 온도로 상승되며, 상기온도로 상승된 순수를 펌프(2)구동에 의해 배분기(4)로 강제 공급하게 된다.The present invention made as described above, first, the pure water stored in the pure water tank (1) by the command of the system main controller not shown is raised to a temperature of about 60 ~ 70 ℃, pumped pure water raised to the temperature (2) The driving force is supplied to the distributor 4.
한편 상기 배분기(4)에 공급된 온수는 다수의 송수관(30a~30c)과 레굴레이터(40a~40c), 유량계(50a~50c)유량센서(60a~60c)를 통해 챔버 어셈블리(20)에 설치된 제 1 내지 제 3 챔버(21~23)의 외벽을 순환한 후 집수기(6)에서 합해져 순수탱크(1)로 귀환되며, 상기 제 1내지 제 3챔버(21~23)의 외벽을 순환하는 일정한 유량상태의 온수에 의해 웨이퍼가 안치된 챔버 내부는 균일한 앰비언트(Amvient)가 되며, 그결과 CVD박막 두께의 균일도, 정밀도등을 가져온다.Meanwhile, the hot water supplied to the distributor 4 is installed in the chamber assembly 20 through a plurality of water pipes 30a to 30c, regulators 40a to 40c, and flowmeters 50a to 50c and flow sensors 60a to 60c. After circulating the outer walls of the first to third chambers 21 to 23 are combined in the water collector 6 and returned to the pure water tank 1, the outer walls of the first to third chambers 21 to 23 are circulated. The inside of the chamber in which the wafer is placed by the hot water at a constant flow rate becomes uniform ambient, resulting in uniformity and precision of CVD thin film thickness.
이때 상기 레굴레이터(40a~40c)는 제 1내지 제 3챔버(21~23)에 공급되는 온수의 압력을 동일하게 유지시켜 유량을 일정하게 하며, 흐르는 온수의 양이 유량계(50a~50c)에 디스클레이 됨으로서 각 챔버로 유입되는 유량을 육안으로 확인하고, 인터록(inter lock)발생시 유량 차에 의한 것인지를 확인 할수 있게 한다.At this time, the regulators 40a to 40c maintain the same pressure of the hot water supplied to the first to third chambers 21 to 23 to maintain a constant flow rate, and the amount of hot water flowing to the flowmeters 50a to 50c. It is possible to visually check the flow rate flowing into each chamber by the de-clave, and to determine whether the flow rate difference is caused when an interlock occurs.
또한 유량센서(60a~60c)는 온수공급라인 즉 송수관(30a~30c)에 이상이 발생될 경우 이를 즉시 감지하여 메인콘트롤러에서 인터록(Inter Lock)신호를 송출하도록 하여 장비의 파손을 예방하게 된다.In addition, the flow sensor (60a ~ 60c) immediately detects the abnormality in the hot water supply line, that is, water pipes (30a ~ 30c) to send an interlock signal from the main controller to prevent damage to the equipment.
이상에서 상술한 바와같이 본고안은 열교환기의 배분기에서 프로세스 챔버의 외벽으로 온수를 공급하는 각각의 송수관에 레굴레이터와 유량계 및 유량센서를 설치하여 챔버외벽에 유입되는 온수의 압력을 동일하게 유지시켜 유량을 일정하게 하여 각 프로세스 챔버의 외벽에 일정한 양의 온수 공급으로 균일한 CVD 박막 형성을 가능케 하고, 각 송수관의 유량을 확인하기 용이토록 하여 인터록(inter lock)신호를 보내도록 하여 장비 파손을 예방하는 것이다.As described above, the present invention provides a regulator, a flow meter, and a flow sensor in each water supply pipe for supplying hot water to the outer wall of the process chamber in the heat exchanger distributor to maintain the same pressure of the hot water flowing into the outer wall of the chamber. By maintaining a constant flow rate, it is possible to form a uniform CVD thin film by supplying a constant amount of hot water to the outer wall of each process chamber, and to make it easy to check the flow rate of each water supply pipe to send an interlock signal to prevent equipment damage. It is.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940003190U KR200162913Y1 (en) | 1994-02-22 | 1994-02-22 | Apparatus for heat exchange of semiconductor process |
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| Application Number | Priority Date | Filing Date | Title |
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| KR2019940003190U KR200162913Y1 (en) | 1994-02-22 | 1994-02-22 | Apparatus for heat exchange of semiconductor process |
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| KR950025885U KR950025885U (en) | 1995-09-18 |
| KR200162913Y1 true KR200162913Y1 (en) | 1999-12-15 |
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| Publication number | Publication date |
|---|---|
| KR950025885U (en) | 1995-09-18 |
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