KR20010087235A - Forming method of quantum hole and light emitting device by using quantum dots and manufacturing method thereof - Google Patents

Abstract

PURPOSE: A method for forming quantum holes, a semiconductor LED using the quantum holes and a manufacturing method of the same are provided to emit light of predetermined colors by using quantum holes having diameters of nanometer size. CONSTITUTION: The semiconductor LED comprises a P-type semiconductor layer(70), a quantum hole layer(72) and an N-type semiconductor layer(74). The P-type semiconductor layer(70) performs a hole supply function. The quantum hole layer(72) is formed by forming an intrinsic semiconductor layer and forming a plurality of quantum holes in the intrinsic semiconductor layer. The N-type semiconductor layer(74) is formed on the quantum hole layer and performs an electron supply function. In the plurality of quantum holes, material having energy band gap smaller than that of the intrinsic semiconductor is filled by single crystal growth.

Description

Forming method of quantum hole and light emitting device by using quantum dots and manufacturing method

The present invention provides a quantum hole forming method for forming a plurality of quantum holes having a nanometer-sized diameter, such as a semiconductor substrate, and a semiconductor light emitting device for emitting light having a predetermined color by using a quantum hole having the small diameter. It relates to a manufacturing method for manufacturing a light emitting device.

Various kinds of lamps are known to emit light energy using electrical energy, including incandescent lamps and halogen lamps. The lamps emit a single color of light, and various colors of filters, gels, and the like must be used to illuminate various colors. However, the use of various colors of filters and gels has to be limited in the development of technology for expressing various colors as it is necessary to replace filters and gels of appropriate colors when changing to other colors.

Therefore, the development of a new technology that can respond to more various lighting or light emitting means has been required. In accordance with these requirements, a light emitting diode (Light Emitting Diode), which is a light emitting means for emitting light of a predetermined color using a semiconductor, has been developed and widely used.

The most widely used light emitting diode is a bulk light emitting diode. In the bulk light emitting diode, a PN junction layer is formed between a P-type semiconductor and an N-type semiconductor, and electrodes are formed on the P-type semiconductor and the N-type semiconductor, respectively. In the bulk light emitting diode, when power is applied to the electrodes of the P-type semiconductor and the N-type semiconductor, holes of the P-type semiconductor and electrons of the N-type semiconductor move to the PN junction layer and are mutually coupled to each other, and are excited and transitioned. Will emit.

1 is a view showing the configuration of a conventional bulk light emitting diode. In the conventional bulk semiconductor light emitting device, the PN junction layer 16 is formed between the P-type semiconductor layer 12 and the N-type semiconductor layer 14, and the upper portion of the P-type semiconductor layer 12 made of GaN material. InGaN is crystal-grown in bulk to form a PN junction layer 16 as a crystal growth layer, and an N-type semiconductor layer 14 is formed on the PN junction layer 16. The P-type semiconductor layer 12 and the N-type semiconductor layer 14 may be formed of a plurality of layers.

In order for the bulk light emitting diode to emit light of a predetermined color, the light emitting diodes 10, 10a, and 10b basically radiate red, green, and blue wavelengths, which are three primary colors of light, respectively.

In order to form three light emitting diodes 10, 10a, and 10b that emit red, green, and blue wavelengths, the materials forming the respective PN junction layers 16, that is, the composition ratio of indium (In) in InGaN are different. There is a need for three types of semiconductor stacks with different indium composition ratios. That is, all of the red, green, and blue PN junction layers 16 are single crystal grown in InGaN in bulk, and the composition ratios of the respective indium (In) are formed differently to output red, green, and blue. . Here, the reason why the component ratio of indium (In) is formed differently is because it is used as a means for controlling recombination energy between carriers of electrons and holes.

The light emitting diodes 10, 10a, and 10b for each color formed in the bulk form as described above are cut into appropriate sizes, and the unit of the red light emitting diode 18, the green light emitting element 18a, and the blue light emitting diode 18b. The device may be used in the form of a device, or a unit device of the light emitting diode 18, the green light emitting device 18a, and the blue light emitting diode 18b may be combined into one display panel.

FIG. 2 is a diagram illustrating a configuration of a display panel that enables a predetermined image to be reproduced using a conventional bulk light emitting diode. The bulk light emitting diodes 10, 10a, and 10b that emit red, green, and blue light may be used to implement images capable of expressing various colors, respectively. The light emitting diodes 10, 10a, and 10b are combined to form one display panel. For example, one display panel 20 is formed by combining unit elements of thirteen red light emitting diodes 10, eight green light emitting diodes 10a, and four blue light emitting diodes 10b.

3 is a graph illustrating wavelengths and intensities of light for the display panel of FIG. 2. As can be seen from the graph of FIG. 3, the display panel 20 including the bulk LEDs 10, 10a, and 10b has a wide range of wavelength distribution when the light intensity is low. And when the upper vertex, that is, the intensity of light is strong, it has a distribution of wavelengths that draw a gentle curve.

Therefore, when the display panel 20 including the plurality of bulk light emitting diodes 10, 10a, and 10b expresses a specific color, the wavelength of the specified color may not be represented by the width of the clear wavelength. This is interpreted to cause a color corresponding to the feeling of the optic nerve for a specific color within the visible range when a plurality of wavelengths of light are synthesized. That is, it means that the specific wavelength of a specific color is not output within the range of the correct wavelength, and it is impossible to clearly describe the specific color as the unique wavelength.

In addition, since the bulk light emitting diode is large in size, it is difficult to manufacture a small display device capable of expressing various colors and delicate images.

An object of the present invention is to provide a quantum hole forming method for forming a quantum hole having a fine diameter of a nanometer size, such as a semiconductor substrate.

In order to form a quantum hole, the present invention uses an ion beam scanning apparatus. That is, the ion beam from the ion gun of the ion beam scanning device focuses to form an ion beam, adjusts the focus of the focused ion beam, enters the semiconductor substrate while accelerating and deflecting, and has a nanometer-sized diameter on the semiconductor substrate. A plurality of quantum holes are formed. At this time, the acceleration voltage for accelerating the ion beam, the size of the ion beam according to the focus control state of the condenser lens for focusing the ion beam, and the incident time of the ion beam incident at the position forming the quantum hole are adjusted to have a desired depth and size. A plurality of quantum holes are formed.

Another object of the present invention is to provide a semiconductor light emitting device using a quantum hole for emitting light of a predetermined color by using a quantum hole having a diameter of nanometer size, and a manufacturing method thereof.

In the semiconductor light emitting device of the present invention, an intrinsic semiconductor layer is grown on the P-type semiconductor layer, and a plurality of quantum holes are formed in the grown intrinsic semiconductor layer to form a quantum hole layer. A material having a smaller energy band gap than the semiconductor is filled by single crystal growth to emit light of a predetermined color, and an N-type semiconductor layer is formed on the quantum hole layer.

Therefore, the unit semiconductor light emitting device of the present invention can be manufactured to be very small in the size of a micron unit, and can be manufactured to selectively emit three primary colors of red, green, and blue light according to the material to grow single crystal in the quantum hole. In the case of intensive use, it is possible to develop a variety of lighting devices, billboards, billboards, and various kinds of video display devices. In addition, the present invention is capable of digital lighting, facilitates various kinds of lighting facilities, and can adjust the color and size and the like colorfully.

For example, a plurality of unit semiconductor light emitting devices each emitting red, green, and blue may be collected in a matrix, and the plurality of unit semiconductor light emitting devices may be digitally controlled to selectively emit light of a predetermined color. Digital lighting is possible. Therefore, it is expected that the technical improvement to the high level where the color changes brilliantly according to the beat and the tone of the music from the low level where the lighting simply illuminates the darkness.

In addition, when applying digital technology, it is possible to display a predetermined image vividly by adjusting the color depth as delicate, sophisticated, and fine as humans can not feel, and does not generate heat or ultraviolet rays at all, It's almost permanent. In addition, since only three unit semiconductor light emitting devices can emit three primary colors of bright light, an image can be clearly displayed even if a predetermined image is realized by reducing the size of an electronic display panel or a display device. In addition, since the wavelength range of the light expressing the color is narrow and clear, the color can be clearly expressed, so that a complete image can be reproduced.

Although the size of the semiconductor light emitting device of the present invention is manufactured in the size of micron unit, the color can be clearly expressed and the intensity of the emitted light energy can be increased, so that a bright image can be reproduced. The present invention can be said to be closer to a light emitting device using a laser than to a bulk light emitting diode currently commercially available in terms of intensity of light energy and concentration of wavelengths of light expressing color. In addition, it is possible to implement a light emitting device that can emit light energy of an extremely high concentration of high concentration.

1 is a view showing the configuration of a conventional bulk light emitting diode,

2 is a diagram illustrating a configuration of a display panel formed using a conventional bulk light emitting diode.

FIG. 3 is a graph showing wavelengths and intensities of light for the display panel of FIG. 2.

4 is a schematic view of an ion beam scanning device for forming a minute size quantum hole in a semiconductor substrate required by the present invention.

5A to 5C are diagrams illustrating that the diameter of a quantum hole is adjusted when an incident time of an ion beam incident on a position forming a quantum hole of a semiconductor substrate is varied in the present invention.

FIG. 6 illustrates an example of a substrate trajectory in which an ion beam moves when a quantum hole is formed in the present invention.

7 is a view for explaining the stacked form of the semiconductor light emitting device of the present invention,

8 is a view for explaining a quantum dot layer in the semiconductor light emitting device of the present invention;

9 is a view showing the configuration of a semiconductor light emitting device of the present invention,

10 is a view showing the configuration of an embodiment of a semiconductor light emitting device of the present invention,

FIG. 11 is a diagram illustrating a configuration of a display panel which enables an image to be reproduced using the semiconductor light emitting device of FIG. 10.

12 is a graph illustrating wavelengths and intensities of light represented by the display panel of FIG. 11;

FIG. 13 is a diagram showing the magnitude of energy for each color in a band diagram.

14 is a view showing the configuration of another embodiment in which a quantum hole is formed so that one semiconductor light emitting device emits light of three colors;

FIG. 15 is a view illustrating a unit light emitting unit obtained by cutting the semiconductor light emitting device of FIG. 14.

FIG. 16 is a graph illustrating wavelengths and intensities of light represented by the unit light emitting unit of FIG. 15.

FIG. 17 is a diagram illustrating a change in energy size and color in a band diagram when a semiconductor light emitting device is manufactured using different quantum holes in another embodiment of the present invention.

18 is a view for explaining an embodiment of adjusting the luminance, which is the intensity of light according to each color in the semiconductor light emitting device of the present invention.

19 is a view illustrating a unit light emitting unit formed of a unit light emitting device cut in FIG. 18.

FIG. 20 is a graph illustrating wavelengths and intensities of light represented by the unit light emitting unit of FIG. 19.

21 and 22 are diagrams illustrating another exemplary embodiment for adjusting luminance, which is the intensity of light, according to each color in the semiconductor light emitting device of the present invention.

* Description of the symbols for the main parts of the drawings *

40: ion gun 42, 42a: condenser lens

44 substrate 46, 48 deflection means for scanning

90: P-type semiconductor layer 92: quantum hole layer

94: N-type semiconductor layer 100: quantum dot

120a, 122a, 124a: unit red, green and blue light emitting elements

130: display panel 170: unit light emitting unit

172, 174, 176: Quantum Hall

Hereinafter, a method of forming a quantum hole, a semiconductor light emitting device using the quantum hole, and a method of manufacturing the same will be described in detail with reference to the accompanying drawings of FIGS. 4 to 22.

In the present invention, a focused ion beam is used to form a plurality of quantum holes having an extremely fine size required. 4 is a schematic view of an ion beam scanning device for outputting a focused ion beam and forming a plurality of quantum holes having minute diameters and depths required by the present invention at minute intervals. Here, reference numeral 40 denotes an ion gun that emits ions at high speed.

Condenser lenses 42 and 42a are disposed in front of the ion gun 40. The condenser lenses 42 and 42a are formed of slits having a predetermined size and an electric field and a magnetic field generated according to an applied voltage, and the ions emitted from the ion gun 40 are used to store the condenser lenses 42 and 42a. The light is focused while passing, and is formed as an ion beam, and the formed ion beam is incident on the front substrate 44. Scanning deflection means 46 and 48 are disposed in a path through which the ion beam passes between the condenser lens 42a and the substrate 44 to deflect the ion beam vertically and horizontally. And the traveling speed of the ion beam is adjusted to the level of the acceleration voltage applied to the acceleration means (not shown in the figure).

According to the present invention using the ion beam scanning apparatus, when the ion beam is incident on the position to form the quantum hole of the substrate, the position to form the quantum hole of the substrate is damaged and separated from the surface structure of the substrate by the impact. A term hole is formed.

Quantitative analysis of the ion beam is required to form the quantum holes having the diameter and depth required for the substrate. In particular, when the environment such as proper voltage environment, time constraints, proper ion beam incidence time, and proper ion beam size are all correctly controlled, a quantum hole having a desired diameter and depth is formed.

For example, when the acceleration voltage for accelerating the ion beam is lower than a predetermined value, the linearity of the ion beam is weakened, and it is impossible to reach the substrate 44 or to separate the top-level atoms of the substrate 44 to form a quantum hole. There will be no. When the acceleration voltage is higher than or equal to a predetermined value, the ion beam is accelerated so that ions of the ion beam are injected into the substrate 44. Therefore, in order to form a quantum hole having a desired diameter and depth, it is required to accelerate the ion beam with an acceleration voltage of an appropriate intensity.

The quantum hole becomes too large when the incident time of the ion beam, that is, the time for injecting the ion beam to a position forming the quantum hole exceeds a predetermined time or more.

Therefore, in order to obtain a quantum hole having an appropriate diameter in the present invention, the accelerating voltage for accelerating the ion beam and the focus of the condenser lenses 42 and 42a for focusing the ion beam must be precisely adjusted, and the ion beam is incident on the quantum hole formation position. You must select the time appropriately.

As such, various conditions must be met to form a quantum hole having a desired diameter and depth using an ion beam scanning apparatus.

As an embodiment for forming the quantum hole in the present invention, the total time for injecting the ion beam with respect to the formation area of the quantum hole 1 mm x 1 mm is set within 5 sec, and the total amount of the incident ion beam is 1 X 10 ¹⁶ CM ^-2 , acceleration When the voltage is 25 to 35 mA and the diameter of the ion beam is 100 nm, a plurality of quantum holes having a fine size can be formed in the substrate 44.

Here, the size of the ion beam can be adjusted in various ways by adjusting the focus of the condenser lenses 42 and 42a.

And the numerical values presented above are just one embodiment, and the specific numerical value change is inevitable for each condition, and the present invention is not limited to such numerical values.

5A to 5C illustrate that the diameter of the quantum holes is adjusted when the incident time of the ion beam incident on the position forming the quantum holes of the semiconductor substrate is changed. An ion beam incident on a position to form a quantum hole by equating the entire size of the substrate to form a quantum hole, moving the ion beam at the same interval (a11 = a12 = a13), that is, to form a quantum hole When adjusting the incident time of the diameter of the quantum hole 50 according to the incident time of the ion beam is formed differently from the incident time of the ion beam.

For example, when the incident time of the ion beam is shortened, as shown in FIG. 5A, the diameter d11 of the quantum hole 50 is about 100 nm. However, when the incident time of the ion beam is set to medium and long, FIGS. 5B and 5C. As such, the diameters d12 and d13 of the quantum holes 50 are increased to about 500 nm and 1 μm. That is, the longer the incident time of the ion beam is set, the larger the diameter of the quantum hole 50 becomes.

FIG. 6 illustrates an example of a substrate trajectory in which an ion beam moves to form a quantum hole in the present invention. In the present invention, the ion beam moves zigzag from the initial position 60 of the substrate on which the quantum hole is to be formed to the final position 62, for example, the position 60 at the upper leftmost position 62.

Here, the movement of the ion beam stops the movement of the ion beam for a set time of about 1 to 5 ms when the ion beam is moved to the position where the quantum hole is to be formed so that the ion beam is continuously scanned at the position where the quantum hole is to be formed. When the set time of about 1 to 5 ms has elapsed, the ion beam is moved to the next position to form a quantum hole, and then the movement of the ion beam is stopped and the ion beam is incident for the set time of about 1 to 5 ms. .

When the incidence of the ion beam is completed to the final position 62 to form the quantum hole, the ion beam returns to the initial position 60 and then moves zigzag to the final position 62 while the ion beam is formed at the same position, that is, the formation position of the quantum hole. Allow repeated incidents.

At this time, the diameter of the ion beam is adjusted to a size of several nm to several hundred nm to form a quantum hole on the substrate of the thin film. That is, in forming a quantum hole using a focused ion beam, the focal point is controlled, and the ion beam, which has a kinetic force due to an acceleration voltage, is moved as if scanning an ultrafine thin film by a magnetic field to apply an impact according to the incident of the ion beam. Then, spot-like quantum holes having the same size as the ion beam are regularly formed on the substrate.

When the incident operation of the ion beam is performed in a high vacuum state, millions of quantum holes can be formed in the substrate within a short time. For example, about 4 million quantum holes having a depth of about 100 nm can be formed within only a few minutes in a region of 1 mm x 1 mm of a very thin semiconductor substrate.

At this time, the depth of the quantum holes to be formed is different depending on the material of the substrate and the magnitude of the acceleration voltage for accelerating the ion beam. The size of the quantum hole is controlled by the diameter of the ion beam and the incident time of the ion beam according to the focusing of the condenser lens.

As such, the present invention can form a quantum hole having a desired size, depth, and spacing in the substrate by adjusting the acceleration voltage, the incident time of the ion beam, and the focus of the ion beam, and also using the focused ion beam in a myriad of times within a short time. Quantum holes can be formed in the substrate.

FIG. 7 is a diagram for describing a stacked form of a semiconductor light emitting device using the quantum holes of the present invention. FIG. As shown in this figure, the semiconductor substrate is doped with impurities to form a P-type semiconductor layer 70, and an intrinsic semiconductor that is not doped on the P-type semiconductor layer 70 is grown to a predetermined height. Form a layer.

In the upper portion of the intrinsic semiconductor layer, a quantum hole layer 72 including extremely small and countless holes (quantum holes) is formed by using the ion beam scanning device. The heat treatment is performed on the plurality of quantum holes of the quantum hole layer 72. RAPID THERMAL ANNEALING for about 10 sec at a temperature of -1000 ° C. The quantum hole is cleaned through this rapid heat treatment.

Next, the quantum holes are filled by recrystallizing a material having a band gap smaller than that of an intrinsic semiconductor. Inside the quantum hole, a material having a smaller band gap than the intrinsic semiconductor of the quantum hole layer 72 is filled to form a quantum dot layer including a plurality of quantum dots. In the case of forming a quantum dot, all materials on the surface other than the quantum hole are moved into the quantum hole by thermal diffusion.

After the quantum dot layer 72 is formed, the intrinsic semiconductor is grown on the quantum dot layer 72 again by a predetermined thickness to form an intrinsic semiconductor layer, and an N-type semiconductor layer doped with impurities on the intrinsic semiconductor layer ( 74) grow.

Thereafter, electrodes are formed on the P-type semiconductor layer 70 and the N-type semiconductor layer 74. When power is applied to the electrodes formed on the P-type semiconductor layer 70 and the N-type semiconductor layer 74, the holes of the P-type semiconductor layer 70 and the electrons of the N-type semiconductor layer 74 are quantum hole layers. It is moved to 72. The carriers of the moved holes and electrons are intensively recombined in the quantum hole layer 72, that is, in the myriad quantum dots of the quantum dot layer to emit light having high energy. The emitted light has a unique wavelength, and when the semiconductor light emitting device is manufactured, light of a predetermined color is output.

Therefore, in the present invention, when the semiconductor light emitting device is manufactured, an environment capable of outputting red, green, and blue wavelengths can be produced, and the light emitting devices of red, green, and blue, which are three primary colors of light, can be manufactured.

According to the present invention, the P-type semiconductor layer 70 may be formed of a plurality of hole supply layers 70a and 70b, and the N-type semiconductor layer 74 may also be formed of a plurality of electron supply layers 74a and 74b. It can form.

In the semiconductor light emitting device of the present invention, the P-type semiconductor layer 70, the quantum hole layer 72 and the N-type semiconductor layer 74 in which a material having a band gap smaller than that of the base material in the plurality of quantum holes are filled by recrystallization. The semiconductor laminate composed of the same can be cut to an appropriate size to form a unit semiconductor light emitting device. Even when the semiconductor laminate is cut, each cut is a semiconductor light emitting device that emits a predetermined light. Hereinafter, the semiconductor laminate and the semiconductor light emitting device will be described without large division.

8 is a view for explaining a quantum dot layer in the semiconductor light emitting device of the present invention. A layer having a predetermined height is formed on the P-type semiconductor layer 70 using an intrinsic semiconductor, and a number of quantum holes are formed on the layer having a predetermined height by the ion beam scanning device described above to form the quantum hole layer 72. do. The quantum hole layer 72 is filled with recrystallized growth of a material having a different energy band gap from the intrinsic semiconductor. The quantum dots 80 are filled with the material having different energy band gaps in the quantum holes.

9 is a view showing an embodiment of a semiconductor light emitting device of the present invention. As shown, an intrinsic semiconductor layer is grown on a P-type semiconductor layer 70 doped with gallium nitride (GaN), a plurality of quantum holes are formed in the intrinsic semiconductor layer, and indium gallium nitride is formed in the quantum holes. Single crystal growth of InGaN to form a quantum hole layer 72, that is, a quantum dot layer. An N-type semiconductor layer 74 doped with gallium nitride (GaN) is formed on the quantum hole layer 72.

Herein, gallium arsenide (GaAs) may be used instead of gallium nitride (GaN), and indium arsenide (InAs) may be used instead of indium gallium nitride (InGaN), and other materials may be used as a suitable material. Of course. In the above embodiment, when the electrodes are connected to the P-type semiconductor layer 70 and the N-type semiconductor layer 74 and current is injected, the quantum dots of the quantum hole layer 72 emit light with a predetermined color as described above. Done.

10 to 12 are views for explaining the configuration and characteristics of the embodiment of the semiconductor light emitting device of the present invention.

10 is a view showing the configuration of an embodiment of a semiconductor light emitting device of the present invention. In the present invention, the quantum hole layer 72 and the N-type semiconductor layer 74 are sequentially formed on the P-type semiconductor layer 70 made of GaN material. The quantum hole layer 72 is formed by forming a plurality of quantum holes in the intrinsic semiconductor layer and growing single crystals of InGaN in the plurality of quantum holes. Here, the size of the quantum hole is drawn largely for convenience, but in reality, it is a very fine hole with a size of about nanometers.

The semiconductor light emitting device of the present invention should also be able to emit light of red, green, and blue, which are three elements constituting the three primary colors of light. The semiconductor light emitting devices 100, 102, 104 in the form of branches are illustrated. Three basic colors of red, green and blue are determined according to the composition ratio of indium (In) of the quantum hole layer 72 in each semiconductor stack.

That is, the unique color of the semiconductor light emitting device of the present invention is determined by the indium ratio in the quantum hole layer 72. The red, green, and blue quantum hole layers 72 are filled with single crystal growth of InGaN inside the quantum holes. In the process, each of them is filled with the necessary component ratio of In.

As described above, the semiconductor light emitting device of the present invention manufactured using the quantum hole layer 72 is cut into a suitable size, and thus, the unit red light emitting device 100a, the unit green light emitting device 102a, and the unit blue light emitting device 104a. Used.

11 is a view showing the configuration of a display panel for reproducing an image using the semiconductor light emitting device of the present invention. According to the present invention, one unit red light emitting device 100a, one unit green light emitting device 102a, and one blue light emitting device 104a are combined to form one display panel 110, and the color of a predetermined image can be expressed. .

FIG. 12 is a graph illustrating measurements of wavelengths and intensities of light represented by the display panel of FIG. 11. 12, the vertex of the wavelength of the semiconductor light emitting device of the present invention is clear and the wavelength bandwidth of the lower portion is narrow. This indicates that the display panel 110 of the semiconductor light emitting device of the present invention can express a predetermined color in a narrow range of wavelength bands and can clearly display a predetermined color.

FIG. 13 is a diagram illustrating a magnitude of energy for each color as a band diagram.

FIG. 13A shows the magnitude of energy when the composition ratio of In is about 0.1% to make blue. FERMI ENERGY 130 indicated by a straight line, the upper line represents the conduction band Ec (CONDUCTION BAND) 132 by the electron, the lower line is the valence band Ev (VALENCE ELECTRON BAND) by the hole (134) is shown. When the composition ratio of In is about 0.1%, the magnitude of energy is emitted to the size of E1 136, and at this time, the wavelength is emitted as light of blue wavelength with visible light.

FIG. 13B shows the magnitude of energy when the composition ratio of In is about 0.5% to show green color. In the case where the composition ratio of In is about 0.5%, the energy is emitted in the size of E2 (136a), and at this time, the light is emitted in the green wavelength light with visible light.

FIG. 13C shows the magnitude of energy when the composition ratio of In is about 0.8% to show red color. When the composition ratio of In is set to about 0.8%, the energy is emitted in the size of E3 (136b), and at this time, the light is emitted in the red wavelength light.

That is, it can be seen that the energy of blue, green, and red is blue highest, green is medium, and red is lowest energy.

14 to 16 illustrate a semiconductor light emitting device of a type using a quantum hole of the present invention.

FIG. 14 is a view showing the configuration of another embodiment of a semiconductor light emitting device of the present invention to emit light of three colors simultaneously in one quantum hole layer. A quantum hole layer 72 is formed between the P-type semiconductor layer 70 and the N-type semiconductor layer 74, and is formed of an intrinsic semiconductor and regularly arranged in three quantum holes 140. The quantum hole 140 of the quantum hole layer 72 is filled with recrystallized growth of materials having different energy band gaps according to their sizes. Through this filling process, all the quantum holes 140 of the quantum hole layer 72 are filled with quantum dots filled with materials having different energy band gaps according to their sizes. The quantum dots having three different sized quantum holes 140 are cut into one unit light emitting unit and used as light emitting devices.

FIG. 15 is a view illustrating cutting three light emitting devices having different sizes of quantum holes into one unit light emitting unit in FIG. 14. In another embodiment of the present invention, the inside of one unit light emitting unit 150 uses a red light emitting element formed by using the largest quantum hole 152 and the smallest quantum hole 154. Thus, a blue light emitting device and a green light emitting device formed using a quantum hole 156 having a middle size of the quantum holes 152 and 154 are provided. That is, blue is formed in the quantum hole 154 of the smallest size because of the highest energy, red is formed in the quantum hole 152 of the largest size because of the lowest energy, and green is the energy of blue and red. Since it is medium in energy, it is formed in a quantum hole having a medium size.

FIG. 16 is a graph illustrating wavelengths and intensities of light represented by the unit light emitting units of FIG. 15. This graph can be seen that the unit light emitting unit of the semiconductor light emitting device according to another embodiment of the present invention can express colors with a narrow range of wavelengths and thus can clearly describe a predetermined color.

FIG. 17 is a diagram showing the magnitude and color of energy in a band diagram when a semiconductor light emitting device is manufactured by varying the size of a quantum hole according to another embodiment of the present invention. Denotes conduction band Ec 172 by electrons, and the lower line represents valence band Ev 174 by holes.

17A shows the energy size when the size of the quantum hole is the largest. When the size of the quantum hole is large, energy is emitted in the size of E1 176, and light of red wavelength is emitted by the visible light.

FIG. 17B is an energy magnitude when the size of the quantum hole is formed to a medium size. FIG. When the size of the quantum hole is medium, energy is emitted to the size of E2 176a, and light of green wavelength is emitted as visible light.

FIG. 17C shows an energy size when the size of the quantum hole is formed to be the smallest. When the size of the quantum hole is the smallest, energy is emitted at the size of E3 (176b), and blue light is emitted at the visible light.

Therefore, as in another embodiment of the present invention, it can be seen that a semiconductor light emitting device emitting red, green, and blue light may be formed when the size of the quantum hole is appropriately adjusted to change the amount of emitted energy.

FIG. 18 is a view for explaining an embodiment of adjusting luminance, which is intensity of light according to each color, in the semiconductor light emitting device of the present invention. The energy band gap is different in the quantum holes of the respective quantum hole layers 180a, 182a, and 184a to manufacture the semiconductor light emitting devices 180, 182, and 184 that emit light of three colors of red, green, and blue. In the recrystallization growth of the material, the quantum holes of the quantum hole layers 180a, 182a, and 184a are filled with different composition ratios. In this case, the size of each quantum hole formed in each quantum hole layer 180a, 182a, and 184a is the same size.

When each of the semiconductor light emitting devices 180, 182, and 184 is cut to an appropriate size, the semiconductor light emitting devices 180, 182, and 184 are cut to different sizes to adjust luminance. For example, the red semiconductor light emitting device 180 is cut into the largest size to form a unit light emitting device 180b, and the green semiconductor light emitting device 182 is cut to a medium size and the unit light emitting device 182b. And the blue semiconductor light emitting device 184 is cut into the smallest size to form a unit light emitting device 184b. As described above, the sizes of the unit light emitting devices 180b, 182b, and 184b are cut differently, thereby adjusting the luminance which is the intensity of the light output from each of the unit light emitting devices 180b, 182b, and 184b.

FIG. 19 illustrates that a unit light emitting unit is formed of the unit light emitting device cut in FIG. 18. The three unit light emitting devices 180b, 182b, and 184b of the unit light emitting unit 190 may have different sizes, but the respective quantum holes have the same size. In the quantum holes of each quantum hole layer, the quantum holes are filled with different composition ratios in recrystallization of a material having a different energy band gap.

20 is a graph showing wavelengths and intensities of light represented by the unit light emitting units of FIG. 19. As can be seen from this graph, the unit light emitting unit of the present invention can express colors with a narrow range of wavelengths and can clearly display a predetermined color.

21 and 22 are diagrams illustrating another exemplary embodiment for adjusting luminance, which is the intensity of light, according to each color in the semiconductor light emitting device of the present invention. 21 shows different energy band gaps in the quantum holes of the respective quantum hole layers 210a, 212a, and 214a to form the semiconductor light emitting devices 210, 212, and 214 of three colors of red, green, and blue. In the recrystallization growth of the material, the quantum holes of the quantum hole layers 210a, 212a, and 214a are filled with the same composition ratio. In this case, the sizes of the quantum holes formed in the respective quantum hole layers 210a, 212a, and 214a are different.

In cutting the semiconductor light emitting devices 210, 212, and 214 of each color, the unit light emitting devices 210b, 212b, and 214b are formed by cutting the same size as shown in FIG. 21, or different from each other as shown in FIG. By cutting to size, unit light emitting devices 220b, 222b, and 224b are formed. That is, the luminance of the light emitted from the unit light emitting units composed of the unit light emitting devices may be controlled by cutting the same size of the red, green, and blue unit light emitting devices in the same way or by differently cutting them. In this case, the size of the unit light emitting device may be cut differently to give another feature.

The present invention has been illustrated and described with reference to certain preferred embodiments, but the present invention is not limited thereto, and various changes may be made without departing from the spirit or the scope of the present invention provided by the following claims. It will be readily apparent to one of ordinary skill in the art that modifications and variations can be made.

As described above, according to the present invention, since the intensity of the three primary colors of red, green, and blue wavelengths is extremely concentrated in a light emitting device that outputs light of a predetermined color by using a semiconductor, accurate color can be expressed. In addition, it is possible to provide a technology for manufacturing an ultra-small unit light emitting device, so that it is possible to manufacture a small-sized image monitor, and to produce a small size image monitor so that image clarity or color clarity does not deteriorate. Can be.

Claims (17)

A P-type semiconductor layer performing a function of hole supply; A quantum hole layer in which an intrinsic semiconductor layer is formed at a predetermined height in the P-type semiconductor layer and a plurality of quantum holes are formed in the intrinsic semiconductor layer; And An N-type semiconductor layer formed on top of the quantum hole layer and performing a function of electron supply, In the plurality of quantum holes, a material having a smaller energy band gap than the intrinsic semiconductor is filled with single crystal growth. The method of claim 1, wherein the size of the quantum hole; A semiconductor light emitting element using a quantum hole, characterized in that the range of 10 to 100nm. The method of claim 1, The P-type semiconductor layer and the N-type semiconductor layer is doped with GaN, The quantum hole is a semiconductor light emitting device using a quantum hole, characterized in that the InGaN is grown by filling a single crystal. The method of claim 1, The P-type semiconductor layer and the N-type semiconductor layer is doped with GaAs, The quantum hole is a semiconductor light emitting device using a quantum hole, characterized in that by filling the InAs single crystal growth. Forming a P-type semiconductor layer by doping impurities into the semiconductor substrate; Forming an intrinsic semiconductor layer by growing an intrinsic semiconductor that has not been doped into an upper surface of the P-type semiconductor layer to a predetermined thickness; Forming a plurality of quantum holes on an upper surface of the intrinsic semiconductor layer; Heat-treating a plurality of quantum holes of the quantum hole layer; Forming a quantum dot layer in which the quantum holes are filled with a recrystallization growth material by recrystallization growth of a material having a band gap smaller than that of the intrinsic semiconductor inside the quantum holes subjected to the heat treatment; And And growing an intrinsic semiconductor to a predetermined thickness in the quantum dot layer and doping impurities to form an N-type semiconductor layer. 6. The method of claim 5, wherein the recrystallization growth in the quantum hole; A method for manufacturing a semiconductor light emitting device using quantum holes, characterized in that the recrystallized growth material is filled into the quantum holes by thermal diffusion in a vacuum state. The method of claim 5, The P-type semiconductor layer and the N-type semiconductor layer is formed by doping GaN, The quantum hole manufacturing method of a semiconductor light emitting device using a quantum hole, characterized in that the InGaN is filled with single crystal growth. The method of claim 5, The P-type semiconductor layer and the N-type semiconductor layer is formed by doping GaAs, The quantum hole manufacturing method of a semiconductor light emitting device using a quantum hole, characterized in that by filling the InAs single crystal growth. The method of claim 5, wherein the recrystallization growth material; A method of manufacturing a semiconductor light-emitting device using a quantum hole, comprising a material including indium and adjusting the mixing ratio of the indium according to red, green, and blue light to be emitted. The method of claim 5, According to the red, green, and blue colors to emit light in one semiconductor light emitting device, the size of the quantum holes is formed differently, and the corresponding red, green, and blue corresponding recrystallization growth materials are filled in the differently formed quantum holes to emit one semiconductor light. A method of manufacturing a semiconductor light emitting device using a quantum hole characterized in that the device emits three primary colors of light. The method of claim 5, The size of the quantum holes is formed differently according to each semiconductor light emitting device that will emit red, green, and blue, and the corresponding recrystallized growth materials of red, green, and blue are filled in the differently formed quantum holes. And cutting the blue semiconductor light emitting device into unit semiconductor light emitting devices having the same size, and then combining the cut red, green, and blue unit semiconductor light emitting devices to emit three primary colors of light. Method of manufacturing the device. The method of claim 5, Quantum holes of the same size are formed in each semiconductor light emitting device to emit red, green and blue light, and the corresponding red, green and blue recrystallization growth materials are filled in the quantum holes, respectively, and the red, green and blue semiconductor light emitting devices Of the semiconductor light emitting device using a quantum hole, characterized in that after cutting into a unit semiconductor light emitting device having a different size and combines the red, green and blue unit semiconductor light emitting devices having different sizes to emit three primary colors of light Manufacturing method. The method of claim 5, wherein the quantum hole; A method of manufacturing a semiconductor light emitting device using a quantum hole, characterized in that formed by the incident ion beam. Allowing the ion gun to release ions at high speed; Focusing the emitted ions to produce an ion beam; Injecting the focused ion beam into a plurality of positions to form a quantum hole of a front semiconductor substrate while deflecting up and down and left and right by scanning deflection means; Adjusting the speed of the ion beam by an acceleration voltage of the ion beam such that the ion beam is incident on the semiconductor substrate and the ions of the ion beam are not injected into the semiconductor substrate by the impact and the surface tissue of the semiconductor substrate is physically removed; And The process consists of setting the ion beam incidence time in the range that the single ion beam type quantum hole is formed in the semiconductor substrate, setting the ion beam size appropriately for the quantum hole size, and forming the quantum hole by controlling the ion beam according to the set value Quantum hole formation method characterized in that. The method of claim 14, The total incident time of the ion beam within 5 sec for the area of the semiconductor substrate to form the quantum hole of 1 mm x 1 mm, the total amount of ions according to the incident time of the ion beam 1 X 10 ¹⁶ CM ^-2 , Acceleration voltage 25 to 35 kV And setting the size of the focused ion beam within 100 nm. 15. The method of claim 14, wherein the diameter of the quantum hole is; A method for forming a quantum hole, characterized by adjusting the size of an ion beam and / or an incident time of the ion beam. 15. The method of claim 14, wherein the depth of the quantum hole is; A method of forming a quantum hole, characterized in that by adjusting the acceleration voltage of the ion beam.