KR20010057708A - Device for controlling temperature of chuck for sputtering process - Google Patents

Device for controlling temperature of chuck for sputtering process Download PDF

Info

Publication number
KR20010057708A
KR20010057708A KR1019990061094A KR19990061094A KR20010057708A KR 20010057708 A KR20010057708 A KR 20010057708A KR 1019990061094 A KR1019990061094 A KR 1019990061094A KR 19990061094 A KR19990061094 A KR 19990061094A KR 20010057708 A KR20010057708 A KR 20010057708A
Authority
KR
South Korea
Prior art keywords
cooling water
chuck
flow rate
wafer
coolant
Prior art date
Application number
KR1019990061094A
Other languages
Korean (ko)
Inventor
고영학
Original Assignee
윤종용
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윤종용, 삼성전자 주식회사 filed Critical 윤종용
Priority to KR1019990061094A priority Critical patent/KR20010057708A/en
Publication of KR20010057708A publication Critical patent/KR20010057708A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates

Abstract

PURPOSE: An apparatus for controlling the temperature of a chuck for the sputtering process is provided to uniformly maintain the temperature of heat that a wafer receives during metallic film deposition by controlling the flow rate of cooling water. CONSTITUTION: The apparatus comprises a target consisting of a metallic material to be deposited and provided into the inner side of a vacuum chamber (10); a chuck (40) which is positioned oppositely directed to the target (20) and on which a wafer (50) is put and fixed; a cooling water supplying part (60) equipped with a cooling water supplying pipe (62) and a cooling water return pipe (64) for circulating cooling water into the chuck (40); a flow rate control means (80) attached on the cooling water supplying pipe (62) for controlling the flow rate of cooling water; and a flow meter (90) attached on the cooling water return pipe (64) for checking the flow rate of cooling water.

Description

스퍼터링 공정용 척의 온도 조절 장치{Device for controlling temperature of chuck for sputtering process}Device for controlling temperature of chuck for sputtering process

본 발명은 스퍼터링 공정용 척의 온도 조절 장치에 관한 것으로서, 보다 상세하게는 웨이퍼 고정 척에 공급되는 냉각수의 유량을 조절함으로써 척이 과열되지 않게 일정한 온도를 유지시켜줄 수 있는 스퍼터링 공정용 척의 온도 조절 장치에관한 것이다.The present invention relates to a temperature control device for a sputtering process chuck, and more particularly, to a temperature control device for a sputtering process chuck that can maintain a constant temperature so as not to overheat by adjusting the flow rate of the cooling water supplied to the wafer holding chuck. It is about.

일반적으로 반도체 제조 공정 중 스퍼터링(Sputtering) 공정은, 예를 들어, 알루미늄(Al)이나 티타늄(Ti) 등의 금속막을 반도체 웨이퍼(Wafer) 위에 증착시켜 전극이나 배선을 형성케 하는 공정이다.In general, a sputtering process is a process of depositing a metal film such as aluminum (Al) or titanium (Ti) on a semiconductor wafer to form electrodes or wires.

즉, 도 1 에서 나타낸 바와 같이, 진공 챔버(1)의 상단에, 예를 들어 알루미늄(Al)이나 티타늄(Ti)과 같은 금속 소재로 이루어진 타겟(Target)(2)이 구비된다. 챔버(1)의 하단에는 웨이퍼(4)를 올려놓고 고정시키는 척(3)이 구비된다.That is, as shown in FIG. 1, a target 2 made of a metal material such as aluminum (Al) or titanium (Ti) is provided at the upper end of the vacuum chamber 1. The lower end of the chamber 1 is provided with a chuck 3 for mounting and fixing the wafer 4.

이와 같이 구성된 진공 챔버(1) 내에 불활성 기체인 아르곤(Ar) 가스를 주입시키고, 타겟(2)에 직류 전압을 인가하면 플라즈마(Plasma)(P)가 형성된다. 이 때, 강한 전기장 속에서 아르곤(Ar) 가스는 Ar+이나 Ar++으로 이온화된다. 상기 양(+) 이온들은 음(-)으로 대전된 타겟(Target)(2)으로 가속되어 충돌을 일으키고, 이러한 충돌력에 의하여 타겟 재료인 알루미늄(Al)이나 티타늄(Ti) 원자를 튀어나오게 함으로써 웨이퍼(4) 상에 얇은 막으로 증착되는 것이다.When the argon (Ar) gas, which is an inert gas, is injected into the vacuum chamber 1 configured as described above, and a DC voltage is applied to the target 2, plasma P is formed. At this time, argon (Ar) gas is ionized to Ar + or Ar ++ in a strong electric field. The positive ions are accelerated to the negatively charged target 2 to cause a collision, and the collision force causes the aluminum (Al) or titanium (Ti) atoms, which are the target materials, to protrude. It is deposited in a thin film on the wafer 4.

그러나, 스퍼터링 공정에서 비아 스텝(Via Step)의 베리어 메탈(Barrier Metal) 침적시 비아 콘택(Via Contact)의 알루미늄 기재가 개방된 부분에는 열 응력을 많이 받게 되며, 후속 공정인 텅스텐(W)의 침적 단계에서 다시 응력을 받게 되므로 알루미늄 이스트루젼(Extrusion) 및 포토 얼라인 키(Photo Align Key) 주위의 막질이 불량하게 되는 현상이 나타나게 된다.However, during the sputtering process, when the barrier metal of the via step is deposited, the aluminum substrate of the via contact is opened with a large amount of thermal stress, and the subsequent process of tungsten (W) deposition is performed. Since it is stressed again in the step, the film quality around the aluminum extrusion and photo alignment keys becomes poor.

이 때에 사용되던 척(3)은 TiN 증착시 발생되는 열을 웨이퍼(4)가 받을 경우제대로 식혀주지 못하고, TiN을 증착하는 동안 웨이퍼(4)는 400℃ 가 넘는 열 응력을 계속적으로 받아야 한다.The chuck 3 used at this time does not cool properly when the wafer 4 receives heat generated during TiN deposition, and the wafer 4 must be continuously subjected to thermal stress of more than 400 ° C. during the deposition of TiN.

이를 개선하기 위하여 척(3) 내부에 냉각수가 유통되도록 하는 ESC(Electro Static Chuck)을 도입하였으나, 냉각수 통로를 완전히 개방했을 경우에는 척(3)의 표면 온도가 최고 170℃ 인 반면에, 냉각수 밸브를 닫을 때에는 메탈 증착을 연속적으로 진행할 경우 온도는 계속적으로 상승하여 균일한 온도를 웨이퍼(4)에 전달시키지 못하는 문제점이 있었다.To improve this, ESC (Electro Static Chuck) was introduced to allow the coolant to flow inside the chuck 3, but when the cooling water passage was completely opened, the surface temperature of the chuck 3 was up to 170 ° C, whereas the coolant valve In the case of closing, when the metal deposition is continuously performed, there is a problem that the temperature is continuously increased so that a uniform temperature cannot be transmitted to the wafer 4.

따라서, 본 발명은 상술한 문제점을 해소하기 위하여 창작된 것으로서, 본 발명의 목적은 냉각수의 유량을 제어하여 금속막 증착시 웨이퍼가 받는 열의 온도를 균일하게 유지시킬 수 있도록 하는 스퍼터링 공정용 척의 온도 조절 장치를 제공하는 데 있다.Accordingly, the present invention was created to solve the above-mentioned problems, and an object of the present invention is to control the flow rate of the cooling water so that the temperature of the chuck for the sputtering process to maintain the temperature of the heat received by the wafer during metal film deposition is uniform. To provide a device.

도 1 은 일반적인 스퍼터링 공정 장치를 개략적으로 나타낸 도면.1 is a schematic representation of a typical sputtering process apparatus.

도 2 는 본 발명에 따른 스퍼터링 공정용 척의 온도 조절 장치를 개략적으로 나타낸 도면.Figure 2 schematically shows a temperature control device of the chuck for the sputtering process according to the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

10 : 진공 챔버, 20 : 타겟,10: vacuum chamber, 20: target,

40 : 척, 50 : 웨이퍼,40: chuck, 50: wafer,

60 : 냉각수 공급부, 62 : 냉각수 공급관,60: cooling water supply part, 62: cooling water supply pipe,

64 : 냉각수 복귀관, 80 : 유량 조절 수단,64: cooling water return pipe, 80: flow rate control means,

90 : 유량계.90: flow meter.

이와 같은 목적을 달성하기 위한 본 발명에 따른 스퍼터링 공정용 척의 온도 조절 장치는, 진공 챔버의 내측에 구비된 증착될 금속 소재로 이루어진 타겟과, 상기 타겟과 대향 구비되어 웨이퍼를 올려놓고 고정시킬 수 있는 척과, 상기 척 내부로 냉각수를 유통시킬 수 있도록 냉각수 공급관 및 냉각수 복귀관을 갖춘 냉각수 공급부와, 상기 냉각수 공급관 상에 냉각수의 유량을 조절시킬 수 있도록 부설되는 유량 조절 수단과, 상기 냉각수 복귀관 상에 냉각수의 유량을 체크하기 위하여 부설되는 유량계를 포함하는 것을 특징으로 한다.The temperature control device of the sputtering process chuck according to the present invention for achieving the above object is provided with a target made of a metal material to be deposited provided on the inside of the vacuum chamber, the target is provided to face the wafer and can be fixed A coolant supply unit having a chuck, a coolant supply pipe and a coolant return tube for distributing coolant into the chuck, flow rate adjusting means installed to adjust a flow rate of coolant on the coolant supply pipe, and on the coolant return tube It characterized in that it comprises a flow meter installed to check the flow rate of the cooling water.

이하, 본 발명의 바람직한 실시예를 첨부된 도면에 의하여 더욱 상세히 설명한다.Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

도 2 는 본 발명에 따른 스퍼터링 공정용 척의 온도 조절 장치를 개략적으로 나타낸 도면이다.2 is a view schematically showing a temperature control device of the chuck for the sputtering process according to the present invention.

상기 도면에서, 진공 챔버(10)의 내측 상단 쪽에는 증착될 금속 소재, 예를 들어 알루미늄(Al)이나 티타늄(Ti)으로 이루어진 타겟(20)이 구비되고, 상기 챔버(10)의 양측면 쪽에는 보조 전극판(32)(34)이 구비된다. 상기 타겟(20)에는 직류(DC) 전류가, 보조 전극판(32)(34) 및 후술하는 척(40) 쪽에는 고주파(RF) 또는 직류(DC)가 인가된다.In the figure, a target 20 made of a metallic material, for example, aluminum (Al) or titanium (Ti), is provided on the inner upper side of the vacuum chamber 10, and on both sides of the chamber 10. The auxiliary electrode plates 32 and 34 are provided. Direct current (DC) current is applied to the target 20, and high frequency (RF) or direct current (DC) is applied to the auxiliary electrode plates 32 and 34 and the chuck 40 described later.

그리고, 상기 챔버(10)의 하단 쪽, 타겟(20)과 대향하는 곳에는 웨이퍼(50)를 올려놓고 고정시킬 수 있는 척(Chuck)(40)이 구비된다. 상기 척(40)은 도시 생략된 가열 수단 및 냉각수 통로가 내장된 ESC(Electro Static Chuck)이다.In addition, a lower portion of the chamber 10 and a portion opposite to the target 20 are provided with a chuck 40 for placing and fixing the wafer 50. The chuck 40 is an electrostatic chuck (ESC) in which heating means and a coolant passage are omitted.

부호 60 은 냉각수 공급부로서, 이는 상기 척(40) 내부로 냉각수를 유통시킬 수 있도록 냉각수 공급관(62) 및 냉각수 복귀관(64)을 구비한다.Reference numeral 60 denotes a cooling water supply unit, which includes a cooling water supply pipe 62 and a cooling water return pipe 64 to distribute the cooling water into the chuck 40.

상기 냉각수 공급관(62) 상에는 냉각수의 공급을 개폐시키는 개폐 밸브(70)가 설치되고, 특히 냉각수의 유량을 조절시킬 수 있는 밸브와 같은 유량 조절 수단(80)이 더 부설된다.On the cooling water supply pipe 62, an on-off valve 70 for opening and closing the supply of cooling water is provided, and in particular, a flow rate adjusting means 80 such as a valve for adjusting the flow rate of the cooling water is further provided.

또한 상기 냉각수 복귀관(64) 상에 냉각수의 유량을 체크하기 위하여 유량계(90)가 부설된다. 이는 AC 전원에 의하여 동작되는 디지털 미터(도시 생략)와 연결된다.In addition, a flow meter 90 is installed on the coolant return pipe 64 to check the flow rate of the coolant. It is connected to a digital meter (not shown) operated by an AC power source.

이와 같이 구비된 본 발명에 따른 스퍼터링 공정용 척의 온도 조절 장치의 일반 작동 관계는 전술하였으므로 생략한다. 본 실시예는 냉각수 공급관(62)에 유량 조절 수단(80)을 더 부설하고, 또한 냉각수 복귀관(64)에 유량계(90)를 더 부설하고 있으므로 공정 진행 도중에 척(40)으로 유통되는 냉각수 량을 적절하게 조절시킬 수 있도록 하고 있다.Since the general operation relationship of the temperature control device of the sputtering process chuck according to the present invention provided as described above has been described above it will be omitted. In this embodiment, since the flow rate adjusting means 80 is further installed in the coolant supply pipe 62 and the flowmeter 90 is further installed in the coolant return pipe 64, the amount of coolant flowed to the chuck 40 during the process. To ensure proper control.

따라서, 공정 과정에서 척(40)의 온도를 대략 250 ℃ 정도로 균일하게 유지시킬 수 있게 되므로 웨이퍼(50)는 종래와 같은 척(40)의 과열 현상으로 인한 열 응력을 많이 받지 않게 된다.Therefore, since the temperature of the chuck 40 can be uniformly maintained at about 250 ° C. in the process, the wafer 50 is not subjected to much thermal stress due to the overheating phenomenon of the chuck 40 as in the prior art.

상술한 본 발명에 의하면, 금속막의 증착 공정을 진행할 때 척 내부에 냉각수를 안정적으로 유통시킬 수 있도록 조절함으로써 웨이퍼가 받는 온도를 균일하게 유지시킬 수 있게 되어 막질 불량을 미연에 방지할 수 있다.According to the present invention described above, it is possible to maintain the temperature received by the wafer uniformly by adjusting the cooling water to stably distribute the cooling water in the chuck during the deposition process of the metal film, thereby preventing film defects in advance.

Claims (1)

진공 챔버의 내측에 구비된 증착될 금속 소재로 이루어진 타겟과,A target made of a metallic material to be deposited provided inside the vacuum chamber, 상기 타겟과 대향 구비되어 웨이퍼를 올려놓고 고정시킬 수 있는 척과,A chuck which is provided to face the target and is capable of placing and fixing a wafer; 상기 척 내부로 냉각수를 유통시킬 수 있도록 냉각수 공급관 및 냉각수 복귀관을 갖춘 냉각수 공급부와,A coolant supply unit having a coolant supply pipe and a coolant return tube to distribute coolant into the chuck; 상기 냉각수 공급관 상에 냉각수의 유량을 조절시킬 수 있도록 부설되는 유량 조절 수단과,A flow rate adjusting means installed to adjust the flow rate of the cooling water on the cooling water supply pipe; 상기 냉각수 복귀관 상에 냉각수의 유량을 체크하기 위하여 부설되는 유량계를 포함하는 것을 특징으로 하는 스퍼터링 공정용 척의 온도 조절 장치.And a flow meter installed to check the flow rate of the cooling water on the cooling water return pipe.
KR1019990061094A 1999-12-23 1999-12-23 Device for controlling temperature of chuck for sputtering process KR20010057708A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019990061094A KR20010057708A (en) 1999-12-23 1999-12-23 Device for controlling temperature of chuck for sputtering process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990061094A KR20010057708A (en) 1999-12-23 1999-12-23 Device for controlling temperature of chuck for sputtering process

Publications (1)

Publication Number Publication Date
KR20010057708A true KR20010057708A (en) 2001-07-05

Family

ID=19628758

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990061094A KR20010057708A (en) 1999-12-23 1999-12-23 Device for controlling temperature of chuck for sputtering process

Country Status (1)

Country Link
KR (1) KR20010057708A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100972045B1 (en) * 2008-01-31 2010-07-22 조영상 both side multilayer thin flim laminating device of boards using reactive sputtering process
KR20160007214A (en) 2014-07-11 2016-01-20 한국기계연구원 Device for desquamating the metal deposition from the base metal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100972045B1 (en) * 2008-01-31 2010-07-22 조영상 both side multilayer thin flim laminating device of boards using reactive sputtering process
KR20160007214A (en) 2014-07-11 2016-01-20 한국기계연구원 Device for desquamating the metal deposition from the base metal

Similar Documents

Publication Publication Date Title
EP0467390B1 (en) Support table for plate-like body and processing apparatus using the table
JP4176848B2 (en) Substrate support and processing apparatus
KR100538661B1 (en) Heated and cooled vacuum chamber shield
US4661228A (en) Apparatus and method for manufacturing planarized aluminum films
US4865712A (en) Apparatus for manufacturing planarized aluminum films
KR100190726B1 (en) Improved chemical gas phase vapor depositing chamber
US8124539B2 (en) Plasma processing apparatus, focus ring, and susceptor
US6673196B1 (en) Plasma processing apparatus
US5267607A (en) Substrate processing apparatus
US6432208B1 (en) Plasma processing apparatus
US5584973A (en) Processing apparatus with an invertible collimator and a processing method therefor
EP0734047A2 (en) Plasma processing method and apparatus
JPH10289887A (en) Ionization sputtering system
JP2000315680A (en) Ceramic gas supplying structure for semiconductor manufacturing apparatus
KR20090071060A (en) Electrostatic chuck and apparatus for treating substrate including the same
US8973526B2 (en) Plasma deposition apparatus and method
KR20120137426A (en) Sputtering apparatus and sputtering method
WO2010120792A1 (en) Method and apparatus for super-high rate deposition
JP4108354B2 (en) Sputtering equipment
KR20010057708A (en) Device for controlling temperature of chuck for sputtering process
WO2008004240A2 (en) Device and method for thin film deposition using a vacuum arc in an enclosed cathode-anode assembly
JPH01177368A (en) Sputtering device
KR100645038B1 (en) Sputtering apparatus for maximizing available region on glass
KR20190050534A (en) Substrate processing apparatus and substrate processing method using the same
US6030510A (en) Hot reflow sputtering method and apparatus

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination