KR20010055436A - Plasma deposition apparatus with heat exchanger - Google Patents

Plasma deposition apparatus with heat exchanger Download PDF

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Publication number
KR20010055436A
KR20010055436A KR1019990056645A KR19990056645A KR20010055436A KR 20010055436 A KR20010055436 A KR 20010055436A KR 1019990056645 A KR1019990056645 A KR 1019990056645A KR 19990056645 A KR19990056645 A KR 19990056645A KR 20010055436 A KR20010055436 A KR 20010055436A
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South Korea
Prior art keywords
ceramic plate
heat exchanger
processing chamber
process chamber
hot water
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KR1019990056645A
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Korean (ko)
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길준덕
송래형
서현욱
서태욱
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윤종용
삼성전자 주식회사
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Priority to KR1019990056645A priority Critical patent/KR20010055436A/en
Publication of KR20010055436A publication Critical patent/KR20010055436A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)

Abstract

PURPOSE: A plasma deposition apparatus having a heat exchanger is provided to prevent production of particles caused by peeling of a surface of a ceramic plate and thereby to improve yield and productivity. CONSTITUTION: The apparatus includes a processing chamber(100) in which a deposition process is performed for a semiconductor wafer, a gas supply assembly such as a shower head for supplying a reaction gas into the processing chamber(100), a ceramic plate(120) encompassing outer surfaces of the gas supply assembly in the processing chamber(100) so as to insulate the gas supply assembly, a circulation line(190) formed along inner walls of the processing chamber(100), and the heat exchanger(200) located outside the processing chamber(100). The heat exchanger(200) supplies hot water to the circulation line(190), and thereby the hot water is circulated through the circulation line(190) to maintain the temperature of the inner walls of the processing chamber(100). Accordingly, it is prevented that the surface of the ceramic plate(120) and a circumference(A) thereof are peeled off due to a sudden change in temperature of the ceramic plate(120).

Description

열교환기를 갖는 플라즈마 증착 장치{PLASMA DEPOSITION APPARATUS WITH HEAT EXCHANGER}Plasma Deposition Apparatus Having Heat Exchanger {PLASMA DEPOSITION APPARATUS WITH HEAT EXCHANGER}

본 발명은 플라즈마를 이용해서 반도체 웨이퍼에 증착 공정을 수행하는 반도체 제조 장치에 관한 것으로, 좀 더 구체적으로는 공정 챔버의 측벽들이 일정한 온도를 유지할 수 있도록 하기 위해 균일한 온도의 온수가 공급되는 플라즈마 증착 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for performing a deposition process on a semiconductor wafer using plasma. More particularly, the present invention relates to a plasma deposition process in which hot water at a uniform temperature is supplied to maintain sidewalls of a process chamber. Relates to a device.

소자의 집적도가 향상되면서 파티클 발생 문제는 수율 및 생산성을 저하시키는 가장 큰 요인으로 작용하고 있다. 또한 파티클은 킬링 디펙트(killing defect)로 작용하여 양산 라인에서 수율을 저하시키는 요인이 되고 있다.As the integration of devices improves, particle generation is a major factor in lowering yield and productivity. Particles also act as killing defects, leading to lower yields in production lines.

특별히, 플라즈마를 이용해서 반도체 웨이퍼에 질화막(SiON)을 증착하는 공정을 진행하는 경우인 플라즈마 강화-질화막 공정(plasma enhanced SiON; PE-SiON) 진행시 반응 가스들을 공정 챔버의 내부로 공급하기 위한 알루미늄 샤워 헤드(shower head; S/H)를 감싸고 있는 원주부분의 세라믹 플레이트(ceramic plate)에는 미세한 파티클들이 많이 부착된다. 이런 미세한 파티클들이 부착된 세라믹 플레이트는 특히 공정 챔버를 일정한 온도 대략 45에서 70℃정도로 맞추기 위해 공급되는 낮은 온도의 냉각수가 공급되면 온도차로 인해서 순간적으로 세라믹 플레이트의 표면에서 막질이 일어나는 현상인 필링(peeling) 현상이 발생하게 된다. 또한 냉각수의 공급 방식이 온/오프(on/off) 방식으로 진행되므로 더욱 더 순간적인 온도차의 발생이 많아지게 된다. 이로 인해 파티클 및 챔버 습식 크리닝(chamber wet cleaning)을 반도체 웨이퍼 1000 매의 공정마다 실시해야 하는 문제가 발생한다. 이 경우 생산상에 막대한 손실이 발생하게 된다. 특히 이러한 필링(peeling) 현상은 또한 파티클로 작용하여 반도체 웨이퍼의 수율을 떨어뜨리는원인으로 작용하는 문제점 또한 발생한다.In particular, aluminum for supplying reaction gases into the process chamber during plasma enhanced SiON (PE-SiON), which is a process of depositing a nitride film (SiON) on a semiconductor wafer using plasma, is performed. A lot of fine particles are attached to the ceramic plate of the circumferential portion surrounding the shower head (S / H). Ceramic plates with such fine particles are often peeled from the surface of the ceramic plate due to the temperature difference when low temperature coolant is supplied to adjust the process chamber to a constant temperature of about 45 to 70 ° C. ) Phenomenon occurs. In addition, since the supply method of the cooling water proceeds in an on / off manner, more instantaneous temperature differences occur. This causes a problem that the particle and chamber wet cleaning must be performed for every 1000 wafers in the process. This leads to huge losses in production. In particular, such a peeling phenomenon also occurs as a particle, which acts as a cause of lowering the yield of the semiconductor wafer.

본 발명은 이와 같은 종래의 문제점을 해결하기 위한 것으로, 세라믹 플레이트의 주변에서 급격한 온도변화가 생기지 않도록 하는 새로운 형태의 플라즈마 증착 장치를 제공하는 데 있다.The present invention is to solve such a conventional problem, to provide a new type of plasma deposition apparatus that does not cause a sudden temperature change around the ceramic plate.

도 1은 플라즈마 증착 장치를 개략적으로 설명하기 위한 도면; 및1 is a view for schematically explaining a plasma deposition apparatus; And

도 2는 본 발명의 바람직한 실시예에 따른 열교환기가 설치된 플라즈마 증착 장치를 설명하기 위한 도면이다.2 is a view for explaining a plasma deposition apparatus equipped with a heat exchanger according to a preferred embodiment of the present invention.

* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings

100 : 플라즈마 증착 공정 챔버100: plasma deposition process chamber

110 : 샤워 헤드 120 : 세라믹 플레이트110: shower head 120: ceramic plate

130 : 파워 공급 소스 140 : 가스 공급 라인130: power supply source 140: gas supply line

150 : 반도체 웨이퍼150: semiconductor wafer

160 : 반도체 웨이퍼 지지부재160: semiconductor wafer support member

170 : 플라즈마 상태의 기체170: gas in the plasma state

180 : 뷰 포트 190 : 온수 라인180: viewport 190: hot water line

200 : 열교환기200: heat exchanger

상술한 목적을 달성하기 위한 본 발명의 특징에 의하면, 내부 공간을 갖는 공정 챔버를 구비하고 플라즈마를 이용하여 증착 공정을 수행하는 본 발명의 플라즈마 증착 장치는 가스 공급 부재, 세라믹 플레이트, 순환라인 그리고 열교환기를 구비한다. 상기 가스 공급 부재는 상기 공정 챔버의 내부로 반응 가스들을 공급한다. 상기 세라믹 플레이트는 상기 공정 챔버의 내부에서 상기 가스 공급 부재의 바깥쪽 표면을 둘러싸서 상기 가스 공급부재를 절연시킨다. 상기 순환 라인은 상기 공정 챔버의 내측벽을 따라 설치되고 일정 온도의 온수가 내부를 순환하여 상기 공정 챔버의 내측벽이 일정 온도를 유지되도록 한다. 상기 열교환기는 상기 공정 챔버의 외부에 위치되어 상기 순환 라인으로 일정 온도의 온수를 항상 공급한다.According to a feature of the present invention for achieving the above object, the plasma deposition apparatus of the present invention having a process chamber having an internal space and performing a deposition process using a plasma is a gas supply member, ceramic plate, circulation line and heat exchange A group is provided. The gas supply member supplies reactant gases into the process chamber. The ceramic plate surrounds the outer surface of the gas supply member in the process chamber to insulate the gas supply member. The circulation line is installed along the inner wall of the process chamber and hot water at a predetermined temperature circulates inside such that the inner wall of the process chamber maintains a constant temperature. The heat exchanger is located outside the process chamber to always supply hot water at a constant temperature to the circulation line.

이와 같은 본 발명의 열교환기를 갖는 플라즈마 증착 장치에 의하면, 열교환기에 의해 일정 온도의 온수가 플라즈마 증착 장치로 항상 공급되므로 샤워 헤드 바깥쪽 부분을 감싸고 있는 세라믹 플레이트 및 그 주변에 급격한 온도변화가 생기지 않게 되어 세라믹 플레이트 표면에서 막질이 일어나는 현상을 방지할 수 있고 이로 인해 플라즈마 증착 장치의 크리닝 주기를 증대시킬 수 있어 생산의 효율을높일 수 있다.According to the plasma deposition apparatus having a heat exchanger of the present invention, hot water at a constant temperature is always supplied to the plasma deposition apparatus by the heat exchanger, so that a sudden temperature change does not occur in the ceramic plate surrounding the outside of the shower head and its surroundings. Film quality can be prevented from occurring on the surface of the ceramic plate, thereby increasing the cleaning cycle of the plasma deposition apparatus, thereby increasing production efficiency.

이하 본 발명의 실시예를 첨부도면 도 1 내지 도 2를 이용하여 상세히 설명한다. 첨부도면에서 동일한 구성요소에 대해서는 동일한 번호를 병기한다.Hereinafter, an embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2. In the accompanying drawings, like reference numerals designate like elements.

도 1은 플라즈마 증착 장치를 개략적으로 설명하기 위한 도면이고 도 2는 본 발명의 바람직한 실시예에 따른 열교환기가 설치된 플라즈마 증착 장치를 설명하기 위한 도면으로 상부에서 챔버를 볼 경우 순환 라인의 형태를 잘 도시하기 위한 관점으로 그려진 도면이다.1 is a view for explaining a plasma deposition apparatus schematically, and FIG. 2 is a view for explaining a plasma deposition apparatus in which a heat exchanger is installed according to a preferred embodiment of the present invention. It is a figure drawn from the viewpoint for doing so.

도 1 내지 도 2를 참조하면, 본 발명의 바람직한 실시예에서는 반도체 웨이퍼상에 질화막을 증착할 수 있는 플라즈마 증착 장치에 열교환기가 장착된다. 플라즈마를 이용해서 질화막을 증착하는 공정이 진행되는 플라즈마 증착 공정 챔버(100)는 증착 공정이 진행되는 내부 공간을 구비하고 있다. 상기 내부 공간에는 한 공정이 진행될 때마다 2매씩의 반도체 웨이퍼(150)에 증착 공정이 진행된다. 그리고 공정의 진행상태를 외부에서 볼 수 있도록 하기 위해 상기 플라즈마 증착 공정 챔버(100)의 일측벽에는 뷰 포트(view port)(180)가 구비된다. 상기 반도체 웨이퍼(150)가 반도체 웨이퍼 지지부재(160)에 의해 지지된 후에 가스 공급 라인(140)을 통해 이동된 반응 가스들이 샤워 헤드(shower head)(110)에서 공급된다. 상기 샤워 헤드(110)와 인접된 부분에는 도시되지는 않았지만, 파워 공급 소스(130)으로부터 파워를 공급받아 플라즈마 상태를 유발시키는 전극이 설치되어 있다. 상기 샤워 헤드(110)를 보호하고 주위로 절연시키기 위한 세라믹 플레이트(ceramic plate)(120)가 상기 샤워 헤드(110)를 감싸고 있다. 상기 반응가스는 상기 샤워 헤드(110)을 통해 상기 플라즈마 증착 공정 챔버(100)로 공급된 후 플라즈마 상태(170)로 변환된다. 그리고 원하는 일정 두께 만큼의 질화막이 상기 반도체 웨이퍼(150)에 증착된다.1 to 2, in a preferred embodiment of the present invention, a heat exchanger is mounted on a plasma deposition apparatus capable of depositing a nitride film on a semiconductor wafer. The plasma deposition process chamber 100 in which a process of depositing a nitride film using plasma is performed has an internal space in which a deposition process is performed. The deposition process is performed on two semiconductor wafers 150 each time a process is performed in the internal space. In addition, a view port 180 is provided at one side wall of the plasma deposition process chamber 100 so that the progress of the process may be viewed from the outside. After the semiconductor wafer 150 is supported by the semiconductor wafer support member 160, the reaction gases moved through the gas supply line 140 are supplied from the shower head 110. Although not shown, the electrode adjacent to the shower head 110 is provided with an electrode that receives power from the power supply source 130 and induces a plasma state. A ceramic plate 120 to protect and insulate the shower head 110 surrounds the shower head 110. The reaction gas is supplied to the plasma deposition process chamber 100 through the shower head 110 and then converted into a plasma state 170. A nitride film of a predetermined thickness is deposited on the semiconductor wafer 150.

이 경우에 상술한 바와 같이 상기 세라믹 플레이트(120) 표면의 막질이 순간적인 온도차의 발생가 발생하게 되면 막질이 일어나는 현상인 필링(peeling) 현상을 나타내게 된다. 특히 특정부위에서 필링(peeling) 현상이 자주 발생하게 되는데 세라믹 플레이트(120) 및 그 주변(도 2의 A부분)에만 발생하며, 19℃의 종래의 프로세스 냉각수(process cooling water; PCW)가 최초로 공급되는 부분에 집중적으로 발생한다. 센서로 세라믹 플레이트(120)의 온도 체크시 필링 발생부위의 온도가 45℃에서 70℃로 일반적인 온도(90℃에서 120℃)에 비해 낮은 온도를 나타내고 있다. 그래서 상기 프로세스 냉각수의 공급 형태를 온/오프 방식에서 열교환기(heat exchanger)(200)를 이용하여 연속적으로 65℃의 가열된 물을 온수 라인(190)을 통해 순환시켜 세라믹 플레이트(120)의 온도가 급격히 낮아지는 현상을 제거한다. 도 2에 도시된 것처럼, 상기 온수 라인(190)은 상기 플라즈마 증착 공정 챔버(100)의 내측벽을 따라 설치되어 챔버를 순환하여 열교환기(200)로 돌아오도록 구성되어 있다. 이로 인해 온도 변동으로 세라믹 플레이트에 증착되었던 막질이 들고 일어나는 현상을 제거할 수 있다.In this case, when the film quality of the surface of the ceramic plate 120 is instantaneously generated as described above, a filming phenomenon occurs, which is a peeling phenomenon. In particular, the peeling phenomenon occurs frequently at a specific part, which occurs only on the ceramic plate 120 and its surroundings (part A of FIG. 2), and the first process cooling water (PCW) of 19 ° C. is supplied for the first time. It occurs intensively in the areas where When the temperature of the ceramic plate 120 is checked by the sensor, the temperature of the peeling part is 45 ° C to 70 ° C, which is lower than the general temperature (90 ° C to 120 ° C). Thus, the temperature of the ceramic plate 120 is circulated through the hot water line 190 by continuously heating the heated water at 65 ° C. using a heat exchanger 200 in an on / off manner. Eliminates the drastically lowering of As shown in FIG. 2, the hot water line 190 is installed along the inner wall of the plasma deposition process chamber 100 to circulate the chamber and return to the heat exchanger 200. This eliminates the phenomenon of film film deposited on the ceramic plate due to temperature fluctuations.

이와 같은 본 발명의 열교환기를 갖는 플라즈마 증착 장치에 의하면, 열교환기에 의해 일정 온도의 온수가 플라즈마 증착 장치로 항상 공급되므로 샤워 헤드바깥쪽 부분을 감싸고 있는 세라믹 플레이트에 급격한 온도변화가 생기지 않게 되어 세라믹 플레이트 표면에서 막질이 일어나는 현상을 방지할 수 있고 이로 인해 플라즈마 증착 장치의 크리닝 주기를 증대시킬 수 있어 생산의 효율을 높일 수 있다.According to such a plasma deposition apparatus having a heat exchanger of the present invention, since hot water at a constant temperature is always supplied to the plasma deposition apparatus by the heat exchanger, a sudden temperature change does not occur in the ceramic plate surrounding the outside of the shower head. The film quality can be prevented from occurring, which can increase the cleaning cycle of the plasma deposition apparatus, thereby increasing production efficiency.

Claims (2)

내부 공간을 갖는 공정 챔버를 구비하고 플라즈마를 이용하여 막질을 증착하는 공정을 수행하는 플라즈마 증착 장치에 있어서:A plasma deposition apparatus comprising a process chamber having an internal space and performing a process of depositing a film quality using plasma: 상기 공정 챔버의 내부 공간으로 반응 가스들을 공급하기 위한 가스 공급 부재;A gas supply member for supplying reaction gases to an interior space of the process chamber; 상기 공정 챔버의 내부에서 상기 가스 공급 부재의 바깥쪽 표면을 둘러싸서 상기 가스 공급부재를 절연시키기 위한 세라믹 플레이트;A ceramic plate for insulating the gas supply member by surrounding an outer surface of the gas supply member in the process chamber; 상기 공정 챔버의 내측벽을 따라 설치되고 일정 온도의 온수가 내부를 순환하여 접촉되는 상기 공정 챔버의 내측벽이 일정 온도를 유지하도록 하기 위한 순환 라인; 및A circulation line installed along an inner wall of the process chamber and configured to maintain a constant temperature of an inner wall of the process chamber in which hot water of constant temperature circulates and contacts the inside; And 상기 공정 챔버의 외부에 위치되어 상기 순환 라인으로 일정 온도의 온수를 항상 공급하여 상기 세라믹 플레이트주위를 일정온도로 유지시키기 위한 열교환기를 포함하는 것을 특징으로 하는 플라즈마 증착 장치.And a heat exchanger positioned outside the process chamber to always supply hot water at a predetermined temperature to the circulation line to maintain the ceramic plate at a constant temperature. 제 1 항에 있어서,The method of claim 1, 상기 일정 온도의 온수는, 50℃에서 70℃사이의 온수인 것을 특징으로 하는 플라즈마 증착 장치.The constant temperature hot water is plasma deposition apparatus, characterized in that hot water between 50 ℃ to 70 ℃.
KR1019990056645A 1999-12-10 1999-12-10 Plasma deposition apparatus with heat exchanger KR20010055436A (en)

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