KR20010046227A - Aperture apparatus for optical instrument - Google Patents
Aperture apparatus for optical instrument Download PDFInfo
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- KR20010046227A KR20010046227A KR1019990049914A KR19990049914A KR20010046227A KR 20010046227 A KR20010046227 A KR 20010046227A KR 1019990049914 A KR1019990049914 A KR 1019990049914A KR 19990049914 A KR19990049914 A KR 19990049914A KR 20010046227 A KR20010046227 A KR 20010046227A
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- South Korea
- Prior art keywords
- aperture
- apertures
- electron
- passing
- resolution
- Prior art date
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- 230000003287 optical effect Effects 0.000 title claims abstract description 20
- 238000010894 electron beam technology Methods 0.000 claims abstract description 16
- 230000000903 blocking effect Effects 0.000 claims description 8
- 230000003993 interaction Effects 0.000 abstract description 3
- 239000000523 sample Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
- H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0455—Diaphragms with variable aperture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
- H01J2237/3355—Holes or apertures, i.e. inprinted circuit boards
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
본 발명은 광학기기의 아파츄어 장치에 관한 것으로, 특히 전체적으로 밝게 보기 위하여 빔 커런트를 높이더라도 고해상력을 얻을 수 있도록 하는데 적합한 광학기기의 아파츄어 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an aperture device of an optical device, and more particularly to an aperture device of an optical device suitable for obtaining high resolution even if the beam current is increased in order to look bright overall.
차지드 파티클 빔 옵틱스를 사용하는 장치는 SEM, TEM, E-Beam writer, FIB 등이 있으며, 그와 같은 장치들 중 전자 현미경(SEM)의 광학계가 도 1에 도시되어 있는 바, 이를 간단히 설명하면 다음과 같다.Devices using charged particle beam optics include SEM, TEM, E-Beam writer, FIB, etc. Among these devices, the optical system of the electron microscope (SEM) is shown in FIG. 1. Same as
도 1은 종래 전자 현미경의 광학계를 보인 계통도이고, 도 2는 종래 아파츄어의 작용을 설명하기 위한 사시도로서, 도시된 바와 같이, 전자 빔을 발생시키기 위한 건(1)의 하측으로 어노드(2), 블랭커(3), 제1 컨덴서 렌즈(4), 아파츄어(5), 제2 컨덴서 렌즈(6), 아파츄어(5), 디플렉터(8), 오브젝티브 렌즈(10)가 설치되어 있어서, 시편(11)에 전자빔(12)을 주사할 수 있도록 되어 있다.FIG. 1 is a schematic diagram showing an optical system of a conventional electron microscope, and FIG. 2 is a perspective view illustrating the operation of a conventional aperture. As shown in the drawing, an anode 2 is disposed below a gun 1 for generating an electron beam. ), A blanker (3), a first condenser lens (4), an aperture (5), a second condenser lens (6), an aperture (5), a deflector (8), an objective lens (10), The electron beam 12 can be scanned on the specimen 11.
상기와 같이 구성되어 있는 전자 현미경의 광학계에서 아파츄어(5)는 텅스텐계의 박막(13)에 수십 마이크론의 아주 작은 원형의 빔출구(14)가 형성된 형태로서, 이와 같은 아파츄어(5)를 전자빔(12)의 광축상에 놓아 둠으로써, 빔출구(14)를 통과하는 전자빔(12)의 단면적을 기계적으로 제한하여 전자의 양을 제한하게 된다.In the optical system of the electron microscope configured as described above, the aperture 5 is formed in the form of a very small circular beam outlet 14 of several tens of microns in the tungsten-based thin film 13. By placing on the optical axis of the electron beam 12, the amount of electrons is limited by mechanically limiting the cross-sectional area of the electron beam 12 passing through the beam exit 14.
즉, 전자 현미경 같이 가능한 작은 일렉트론 프로브(ELECTRON PROBE)를 형성시켜야 하는 곳에서는 옵틱스(OPTICS)의 크로스 오버(CROSS OVER) 앞에 아파츄어(5)를 위치시켜서 크로스 오버의 단면적을 줄여 미세 프로브를 형성시키게 된다.In other words, where an ELECTRON PROBE as small as possible is to be formed, such as an electron microscope, the Aperture 5 is placed in front of the CROSS OVER of OPTICS to reduce the cross-sectional area of the crossover to form a fine probe. do.
그러나, 종래의 전자 현미경에서는 전체적으로 밝게 보기 위하여 빔 커런트(BEAM CURRENT)를 높이게 되면 쿨롱 력(COULOMB INTERACTION)에 의하여 빔 프로브(BEAM PROBE)의 크기가 커지게 되어 해상력의 저하를 초래하는 문제점이 있었다.However, in the conventional electron microscope, when the beam current (BEAM CURRENT) is increased in order to look bright overall, the size of the beam probe (BEAM PROBE) is increased by the COULOMB INTERACTION, which causes a problem of lowering the resolution.
상기와 같은 문제점을 감안하여 안출한 본 발명의 목적은 빔 커런트를 높이더라도 해상력이 저하되지 않도록 하는데 적합한 광학기기의 아파츄어 장치를 제공함에 있다.SUMMARY OF THE INVENTION An object of the present invention devised in view of the above problems is to provide an aperture device of an optical device suitable for preventing the resolution from being lowered even if the beam current is increased.
도 1은 종래 전자 현미경의 광학계를 보인 계통도.1 is a system diagram showing an optical system of a conventional electron microscope.
도 2는 종래 아파츄어의 작용을 설명하기 위한 사시도.Figure 2 is a perspective view for explaining the action of the conventional apache.
도 3은 본 발명의 아파츄어 장치의 일실시예를 보인 평면도.Figure 3 is a plan view showing an embodiment of the aparture device of the present invention.
도 4는 도 3의 A-A'를 절취하여 보인 단면도.4 is a cross-sectional view taken along the line AA ′ of FIG. 3;
도 5는 본 발명의 아파츄어 장치의 다른 실시예를 보인 평면도.5 is a plan view showing another embodiment of the aparture device of the present invention.
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
12 : 전자빔 21 : 빔출구12 electron beam 21 beam exit
22 : 빔통과부 23 : 빔차단부22: beam passing portion 23: beam blocking portion
상기와 같은 본 발명의 목적을 달성하기 위하여 광학기기의 아파츄어에 있어서, 아파츄어를 통과하는 전자 빔의 크기를 제한하기 위한 빔출구를 전자빔을 차단하기 위한 빔차단부의 중앙에 다수개 밀집되도록 형성하여 빔통과부를 이루도록 하여 빔통과부의 빔출구들을 통과하는 전자빔들 간의 쿨롱력 감소에 의한 해상력을 향상시키도록 한 것을 특징으로 하는 광학기기의 아파츄어 장치가 제공된다.In order to achieve the object of the present invention as described above, in the aperture of the optical device, a plurality of beam outlets for limiting the size of the electron beam passing through the aperture are formed so as to be concentrated in the center of the beam blocking unit for blocking the electron beam. By providing a beam passing portion is provided an optical device of the optical device characterized in that to improve the resolution by reducing the Coulomb force between the electron beams passing through the beam exit of the beam passing portion.
이하, 상기와 같이 구성되는 본 발명 광학기기의 아파츄어 장치를 첨부된 도면의 실시예를 참고하여 보다 상세히 설명하면 다음과 같다.Hereinafter, with reference to the embodiment of the accompanying drawings, the optical device of the optical device of the present invention configured as described above in detail as follows.
도 3은 본 발명의 아파츄어 장치의 일실시예를 보인 평면도로서, 도시된 바와 같이, 본 발명 광학기기의 아파츄어 장치는 종래와 마찬가지로 제1 컨덴서 렌즈(4)와 제2 컨덴서 렌즈(6)의 하측에 각각 설치되어 전자빔(12)의 크기를 제한 할 수 있도록 되어 있는 것은 종래와 유사하다.3 is a plan view showing an embodiment of the aperture device of the present invention. As shown, the aperture device of the optical device of the present invention is the same as the conventional first condenser lens 4 and the second condenser lens 6. The lower side of each is provided so as to limit the size of the electron beam 12 is similar to the conventional.
여기서, 본 발명의 아파츄어 장치는 사각형 형태로된 텅스텐 박막의 중앙에 다수개의 빔출구(21)가 형성되도록 빔통과부(22)가 형성되어 있고, 그 빔통과부(22)의 외측에는 빔차단부(23)가 형성되어 있다.Here, in the apartheid device of the present invention, a beam passing portion 22 is formed so that a plurality of beam outlets 21 are formed at the center of the rectangular tungsten thin film, and a beam is formed outside the beam passing portion 22. The blocking part 23 is formed.
상기 빔출구(21)의 직경은 아파츄어의 두께 보다 작거나 같아야 한다. 그 이유는 도 4에 도시된 바와 같이, 직경을 D라고 하고, 높이(아파츄어 두께)를 t라고 할 경우에 차지드 파티클 빔(CHARGED PARTICLE BEAM)의 경우에 파장이 매우 짧으므로 회절이 거의 일어나지 않는다. 따라서 빔출구(21)를 통과할 수 있는 앵귤러 디버갠스(ANGULAR DIVERGENCE) θ는 D/t(ARCTAN) 보다 클수 없고, 동일한 빔 커런트를 가지는 전자빔의 경우라도 앵귤러 디버갠스가 작으므로 쿨롱 력(COULOMB INTERACTION)이 일어날 확률이 작아진다.The diameter of the beam outlet 21 should be less than or equal to the thickness of the apache. The reason for this is that as shown in FIG. 4, when the diameter is D and the height (aperture thickness) is t, in the case of the charged particle beam (CHARGED PARTICLE BEAM), the wavelength is very short, so that diffraction hardly occurs. . Therefore, ANGULAR DIVERGENCE θ that can pass through the beam outlet 21 cannot be greater than D / t (ARCTAN), and even in the case of an electron beam having the same beam current, the angular divergence is small, so the COULOMB INTERACTION ) Is less likely to occur.
상기 빔출구(21)의 형태는 원형을 예로들어 설명하였으나, 사각형으로 형성하여도 상기와 같은 동일한 효과를 얻는 것이 가능하다.Although the shape of the beam outlet 21 has been described using a circular example, it is possible to obtain the same effect as described above even when formed in a square.
도 5는 본 발명의 아파츄어 장치의 다른 실시예를 보인 평면도로서, 도시된 바와 같이, 빔통과부(22)를 사각형 형태로 하고, 그 빔통과부(22)의 다수개의 빔출구(21)를 형성하고, 상기 빔통과부(22)의 외측이 빔차단부(23)가 되도록 하는 경우에도 쿨롱 력을 감소시켜서 고해상력을 얻는 것이 가능하다.5 is a plan view showing another embodiment of the apache device of the present invention. As shown in FIG. 5, the beam passing portion 22 has a quadrangular shape, and the plurality of beam outlets 21 of the beam passing portion 22 are shown. It is possible to obtain a high resolution by reducing the Coulomb force even when forming a and the outer side of the beam passing portion 22 to be the beam blocking portion 23.
종래와 동일한 부분에 대하여는 동일부호를 부여하여 설명하였다.The same parts as in the prior art have been described with the same reference numerals.
이상에서 상세히 설명한 바와 같이, 본 발명 광학기기의 아파츄어 장치는 직경이 높이 보다 작거나 같은 빔출구가 다수개 형성되도록 빔통과부를 형성하고, 그 빔통과부의 외측에 빔차단부를 형성하여, 빔통과부의 빔출구들을 통과하는 전자빔의 쿨롱 력이 일어나지 않도록 함으로써, 동일한 빔 커런트에서도 종래 보다 고해상력을 얻을 수 있는 효과가 있다.As described above in detail, the aperture device of the optical device of the present invention forms a beam passing portion so that a plurality of beam exits having a diameter smaller than or equal to the height is formed, and a beam blocking portion is formed outside the beam passing portion, By preventing the Coulomb force of the electron beam passing through the negative beam exits, it is possible to obtain a higher resolution than the conventional beam current.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990049914A KR20010046227A (en) | 1999-11-11 | 1999-11-11 | Aperture apparatus for optical instrument |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990049914A KR20010046227A (en) | 1999-11-11 | 1999-11-11 | Aperture apparatus for optical instrument |
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| Publication Number | Publication Date |
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| KR20010046227A true KR20010046227A (en) | 2001-06-05 |
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| KR1019990049914A KR20010046227A (en) | 1999-11-11 | 1999-11-11 | Aperture apparatus for optical instrument |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06163370A (en) * | 1992-07-14 | 1994-06-10 | American Teleph & Telegr Co <Att> | Manufacture of submicron device using multiple opening filter |
| US5359202A (en) * | 1992-07-24 | 1994-10-25 | Fujitsu Limited | Electron beam exposure apparatus employing blanking aperture array |
| US5650631A (en) * | 1994-06-24 | 1997-07-22 | Hitachi, Ltd. | Electron beam writing system |
| JPH10255712A (en) * | 1997-03-07 | 1998-09-25 | Nec Corp | Electron beam exposer and method thereof |
-
1999
- 1999-11-11 KR KR1019990049914A patent/KR20010046227A/en not_active Application Discontinuation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06163370A (en) * | 1992-07-14 | 1994-06-10 | American Teleph & Telegr Co <Att> | Manufacture of submicron device using multiple opening filter |
| US5359202A (en) * | 1992-07-24 | 1994-10-25 | Fujitsu Limited | Electron beam exposure apparatus employing blanking aperture array |
| US5650631A (en) * | 1994-06-24 | 1997-07-22 | Hitachi, Ltd. | Electron beam writing system |
| JPH10255712A (en) * | 1997-03-07 | 1998-09-25 | Nec Corp | Electron beam exposer and method thereof |
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