KR20010035721A - Power supply circuit for switching voltage - Google Patents

Power supply circuit for switching voltage Download PDF

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Publication number
KR20010035721A
KR20010035721A KR1019990042417A KR19990042417A KR20010035721A KR 20010035721 A KR20010035721 A KR 20010035721A KR 1019990042417 A KR1019990042417 A KR 1019990042417A KR 19990042417 A KR19990042417 A KR 19990042417A KR 20010035721 A KR20010035721 A KR 20010035721A
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South Korea
Prior art keywords
voltage
transistor
power supply
resistor
horizontal frequency
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KR1019990042417A
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Korean (ko)
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변영갑
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박종섭
현대전자산업 주식회사
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Priority to KR1019990042417A priority Critical patent/KR20010035721A/en
Publication of KR20010035721A publication Critical patent/KR20010035721A/en

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dc-Dc Converters (AREA)

Abstract

PURPOSE: An SMPS(Switched Mode Power Supply) for changing a voltage is provided to provide a suitable voltage requested in a circuit by changing a B¬+ voltage according to a horizontal frequency. CONSTITUTION: An output voltage with 40 voltages is connected with a voltage(B¬+_S) through a diode(D2), and an output voltage with 80 voltages is connected with a source of a P-type FET(Q1) and one side of a resistor(R1). The other side of the resistor(R1) is connected with a gate of the P-type FET(Q1) and is simultaneously connected with one side of a resistor(R2). The other side of resistor(R2) is connected with a collector of a transistor(Q2). A drain of the transistor(Q1) is connected with the voltage(B¬+_S). An emitter of the transistor(Q2) is grounded, and a base of the transistor(Q2) is connected with a horizontal frequency sensing unit(MCU) through a resistor(R3). The horizontal frequency sensing unit(MCU) outputs a low level through a power selection port when a horizontal frequency is less than a uniform frequency band, and outputs a high level when the horizontal frequency is more than the uniform frequency band.

Description

전압전환 전원회로{Power supply circuit for switching voltage}Power supply circuit for switching voltage

본 발명은 모니터 등에 적용되는 전압전환 전원회로에 관한 것으로서, 특히 수평주파수에 따라 B+전압을 변경함으로써 회로에서 요구하는 적절한 전압을 사용할 수 있도록 한 전압전환 전원회로에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a voltage switching power supply circuit applied to a monitor and the like, and more particularly, to a voltage switching power supply circuit capable of using an appropriate voltage required by a circuit by changing a B + voltage according to a horizontal frequency.

종래의 모니터 전원회로로서 스텝업(step-up)방식의 전원회로는 낮은 전원전압으로 회로를 구성할 수 있어 부품 선택이나 회로 구성에 있어서 유리한 면이 있었다. 그러나, 상기의 스텝업 방식은 수평주파수 범위가 높아지면 B+전류감지 전압이 한계를 벗어나 레귤레이션이 무너져서 일정 주파수 이상은 사용이 불가능한 문제점이 있었다. 따라서, 스텝업방식의 전원회로는 주파수 30∼70KHz 대역의 모니터에서만 사용되고, 그 이상의 주파수에서는 스텝다운(step-down) 방식의 회로가 사용되고 있다. 이러한 스텝다운 방식의 전원회로는 레귤레이션이 좋은 이점은 있으나 전원회로(SMPS)단의 전반적인 전압 레벨이 높아지므로 회로 설계 비용이 높아진다는 단점이 있다.As a conventional monitor power supply circuit, a step-up power supply circuit can be configured with a low power supply voltage, which is advantageous in component selection and circuit configuration. However, the step-up method has a problem in that when the horizontal frequency range is increased, the B + current sensing voltage is out of the limit and the regulation is collapsed, so that a predetermined frequency or more cannot be used. Therefore, the step-up power supply circuit is used only in the monitor of the frequency 30-70KHz band, and the step-down circuit is used at the frequency higher than that. This step-down power supply circuit has good regulation, but has a disadvantage in that the circuit design cost is increased because the overall voltage level of the power supply circuit (SMPS) stage is increased.

본 발명은 상기한 문제점을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은 스텝업 방식의 전원회로에 있어서 수평주파수에 따라 B+전압을 변경함으로써 회로에서 요구하는 적절한 전압을 공급할 수 있는 전원회로를 제공하는 것이다.SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide a power supply circuit capable of supplying an appropriate voltage required by a circuit by changing a B + voltage according to a horizontal frequency in a step-up power supply circuit. To provide.

도 1은 본 발명의 전압전환 전원회로도,1 is a voltage switching power supply circuit diagram of the present invention;

도 2는 본 발명의 실시예를 나타내는 도면이다.2 is a diagram showing an embodiment of the present invention.

상기 목적을 달성하기 위하여, 본 발명의 전압전환 전원회로는 모니터의 주파수 대역을 감지하여 파워 선택을 행하는 수평주파수 감지부와, 상기 수평주파수 감지부에 연결되며 상기 파워 선택에 의해 온(ON)·오프(OFF)되는 트랜지스터와, 상기 트랜지스터의 온(ON)·오프(OFF)에 의해 동작하도록 되어 있는 P채널형 FET와, 출력전압 Vlow에 연결되어 상기 P채널형 FET가 온되었을때 출력전압 Vhigh만이 B+_S에 공급되도록 하는 다이오드를 포함하는 것을 특징으로 한다.In order to achieve the above object, the voltage switching power supply circuit of the present invention detects a frequency band of a monitor and performs a power selection, and a horizontal frequency sensing unit connected to the horizontal frequency sensing unit and turned on by the power selection. A transistor that is turned OFF, a P-channel FET that is operated by ON and OFF of the transistor, and an output voltage when the P-channel FET is turned on by being connected to an output voltage V low And a diode such that only V high is supplied to B + _S.

본 발명의 다른 특징 및 이점들은 첨부도면에 의거한 다음의 설명으로 더욱 명백해진다.Other features and advantages of the present invention will become more apparent from the following description based on the accompanying drawings.

제1 도에 나타난 바와 같이, 40V의 출력전압(Vlow)은 다이오드(D2)를 통하여 B+_S에 연결되고 또 다른 80V의 출력전압(Vhigh)은 P채널형 FET(Q1)의 소스 및 저항(R1)의 한쪽에 연결되며 저항(R1)의 다른 한쪽은 P채널형 FET(Q1)의 게이트에 연결됨과 동시에 저항(R2)에 연결되고 저항(R2)의 다른 한쪽은 트랜지스터(Q2)의 콜렉터에 연결된다. 한편 트랜지스터(Q1)의 드레인은 B+_S에 접속되며 트랜지스터(Q2)의 에미터는 접지되고 베이스는 저항(R3)를 거쳐 수평주파수 감지부(MCU)에 연결되도록 구성되어 있다.As shown in FIG. 1, the output voltage V low of 40 V is connected to B + _S through the diode D 2 , and another output voltage V high of 80 V is connected to the P-channel FET Q 1 . connected to one of a source and a resistor (R 1) and a resistance (R 1) the other end connected to the P-channel FET at the same time, the resistance (R 2) and connected to the gate of the (Q 1) and the resistance (R 2) different in the One side is connected to the collector of transistor Q 2 . Meanwhile, the drain of the transistor Q 1 is connected to B + _S, the emitter of the transistor Q 2 is grounded, and the base is connected to the horizontal frequency sensing unit MCU through the resistor R 3 .

따라서, 수평주파수 감지부(MCU)는 일정 주파수대역 이하에서는 파워 선택단자를 로우(LOW)로 하고, 일정 주파수대역 이상에서는 파워 선택단자를 하이(HIGH)로 출력하도록 되어 있으며, 파워 선택단자가 로우(LOW)인 경우에는 트랜지스터(Q2)가 오프(OFF)되어 트랜지스터(Q1)의 게이트에는 80V의 출력전압(Vhigh)에서 저항(R1)에 의해 브리드된 전압이 걸려 트랜지스터(Q1)도 오프된다. 이때 40V의 출력전압(Vlow)이 다이오드(D2)를 통하여 B+_S에 공급된다.Therefore, the horizontal frequency sensing unit (MCU) outputs the power selection terminal low in a predetermined frequency band or less, and outputs the power selection terminal high in a certain frequency band or more, and the power selection terminal is low. (LOW) in the case of a transistor (Q 2) is turned off (oFF) is hanging the voltage bleed by a transistor (Q 1) a gate resistor (R 1) from the output voltage (V high) of 80V of the transistor (Q 1 ) Is also off. At this time, the output voltage V low of 40V is supplied to B + _S through the diode D 2 .

또한, 일정 주파수대역 이상의 주파수가 감지되어 파워 선택단자가 하이(HIGH)로 된 경우에는 트랜지스터(Q2)가 온(ON)되어 트랜지스터(Q1)의 게이트 전압이 낮아져 트랜지스터(Q1)가 온(ON)된다. 따라서 80V의 출력전압(Vhigh)이 P채널형 FET(Q1)의 소스, 드레인을 거쳐 B+_S에 공급되며, 40V의 출력전압(Vlow)은 다이오드(D2)의 캐소오드(cathode)쪽 전위가 80V로서 높기 때문에 차단된다.Further, is larger than a certain frequency band frequency is detected and the power selection terminal when a high (HIGH), the transistor (Q 2) is turned on (ON) is the lower the gate voltage of the transistor (Q 1) transistor (Q 1) on (ON). Therefore, an output voltage of 80V (V high ) is supplied to B + _S through the source and the drain of the P-channel FET (Q 1 ), and the output voltage (V low ) of 40V is the cathode of the diode (D 2 ). ) The potential is blocked because it is high as 80V.

도 2에 있어서, 주파수 대역이 일정치 이하인 경우 H/V 프로세서 TDA9109의 #28 B+PWM 레귤레이터 출력(pulse width modulation regulator output)은 N채널형 FET(Q3)의 소스전류 변화를 감지하여 PWM으로 펄스폭을 조정하여 줌으로써 캐패시턴스(C2)의 직류전압(B+)을 부하(Load)에 맞게 변경하도록 동작된다.2, when the frequency band is below a certain value, the # 28 B + pulse width modulation regulator output of the H / V processor TDA9109 detects a change in the source current of the N-channel FET Q 3 and converts it into PWM. By adjusting the pulse width it is operated to change the DC voltage (B + ) of the capacitance (C 2 ) to match the load (Load).

한편 고주파수대역인 경우에 N채널형 FET(Q3)의 소스 전류를 감지하는 TDA9109의 #16에서 전류 감지 레귤레이션이 무너져 버렸던 종래의 스텝업 방식의 전원회로에 있어서, 상기 발명을 이용하여 보다 높은 전압이 B+_S에 공급되게 함으로써 계속 레귤레이션을 유지할 수 있게 된다. 즉, 주파수 대역이 높아지면 수평주파수 감지부(MCU)의 주파수 센싱으로 전원선택 단자를 하이(HIGH)로 출력함으로써 트랜지스터(Q2)를 온(ON)시키고 트랜지스터(Q1)를 동작시켜 Vhigh를 B+_S에 공급함으로써 다시 레귤레이션을 유지할 수 있도록 하여 준다.On the other hand, in the conventional step-up power supply circuit in which the current sensing regulation is broken at # 16 of the TDA9109 which senses the source current of the N-channel FET Q 3 in the high frequency band, using the above-described invention, a higher voltage By supplying this B + _S, regulation can be maintained continuously. That is, by operating an on (ON) and the transistor (Q 1) the transistor (Q 2) by outputting the power selection terminal to the frequency sensing a high (HIGH) for the higher the frequency band horizontal frequency detection unit (MCU) V high Is supplied to B + _S to maintain regulation again.

상기한 구성의 본 발명에 따르면, 일정치 이상의 높은 주파수대역에서는 더 높은 전압을 B+전압으로 선택하여 줌으로써 스텝업 방식의 전원회로의 사용가능 범위를 높일 수 있고, 저가의 부품으로 높은 주파수 대역까지 설계하는 것이 가능하게 되어 보다 저렴한 비용으로 전원회로(SMPS)를 설계할 수 있게 된다.According to the present invention having the above-described configuration, in a high frequency band of a predetermined value or more, by selecting a higher voltage as the B + voltage, the usable range of the step-up power circuit can be increased, and inexpensive components up to the high frequency band The design enables the design of a power supply circuit (SMPS) at a lower cost.

Claims (1)

모니터의 주파수 대역을 감지하여 파워 선택을 행하는 수평주파수 감지부(MCU)와,Horizontal frequency detection unit (MCU) to detect the frequency band of the monitor and to select a power, 상기 수평주파수 감지부(MCU)에 연결되며 상기 파워 선택에 의해 온(ON)·오프(OFF)되는 트랜지스터(Q2)와,A transistor Q 2 connected to the horizontal frequency sensing unit MCU and turned on / off by the power selection; 상기 트랜지스터(Q2)의 온(0N)·오프(OFF)에 의해 동작하도록 되어 있는 P채널형 FET(Q1)와,A P-channel FET Q 1 which is operated by ON (0N) and OFF (OFF) of the transistor Q 2 , and 출력전압 Vlow에 연결되어 상기 P채널형 FET(Q1)가 온(ON)되었을때 출력전압 Vhigh만이 B+_S에 공급되도록 하는 다이오드(D2)를 포함하는 것을 특징으로 하는 전압전환 전원회로.The output voltage is connected to V low voltage switching power supply comprises a diode (D 2) for only the output voltage V high when the P-channel FET (Q 1) is turned on (ON) to supply the B + _S Circuit.
KR1019990042417A 1999-10-01 1999-10-01 Power supply circuit for switching voltage KR20010035721A (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930022831A (en) * 1992-04-22 1993-11-24 정용문 High Voltage Stabilization Circuit for Multi-Mode Monitors
KR940017705A (en) * 1992-12-30 1994-07-27 이헌조 Supply voltage control circuit of multi-mode monitor
KR940017706A (en) * 1992-12-30 1994-07-27 이헌조 Supply voltage control circuit of multi-mode monitor
KR19990007319U (en) * 1997-07-31 1999-02-25 배순훈 Separate high voltage generation circuit of multi-sync monitor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930022831A (en) * 1992-04-22 1993-11-24 정용문 High Voltage Stabilization Circuit for Multi-Mode Monitors
KR940017705A (en) * 1992-12-30 1994-07-27 이헌조 Supply voltage control circuit of multi-mode monitor
KR940017706A (en) * 1992-12-30 1994-07-27 이헌조 Supply voltage control circuit of multi-mode monitor
KR19990007319U (en) * 1997-07-31 1999-02-25 배순훈 Separate high voltage generation circuit of multi-sync monitor

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