KR20010003256A - Etching gas containing ketonic fluorocarbons and etching method for insulating layer using the same - Google Patents
Etching gas containing ketonic fluorocarbons and etching method for insulating layer using the same Download PDFInfo
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- KR20010003256A KR20010003256A KR1019990023478A KR19990023478A KR20010003256A KR 20010003256 A KR20010003256 A KR 20010003256A KR 1019990023478 A KR1019990023478 A KR 1019990023478A KR 19990023478 A KR19990023478 A KR 19990023478A KR 20010003256 A KR20010003256 A KR 20010003256A
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- etching
- ketone
- based fluorocarbon
- gas containing
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- 238000005530 etching Methods 0.000 title claims abstract description 122
- 238000000034 method Methods 0.000 title claims abstract description 55
- 150000002576 ketones Chemical class 0.000 claims abstract description 42
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000000654 additive Substances 0.000 claims abstract description 11
- 230000000996 additive effect Effects 0.000 claims abstract description 11
- -1 perfluoro compound Chemical class 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 75
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 4
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical group C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000010792 warming Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 125000000468 ketone group Chemical group 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- ALVFUQVKODCQQB-UHFFFAOYSA-N 1,1,1,2,2,4,4,5,5,5-decafluoropentan-3-one Chemical compound FC(F)(F)C(F)(F)C(=O)C(F)(F)C(F)(F)F ALVFUQVKODCQQB-UHFFFAOYSA-N 0.000 description 1
- QJPLLYVRTUXAHZ-UHFFFAOYSA-N 1,1,1,3,3,4,4,4-octafluorobutan-2-one Chemical compound FC(F)(F)C(=O)C(F)(F)C(F)(F)F QJPLLYVRTUXAHZ-UHFFFAOYSA-N 0.000 description 1
- GWFGVRFAJMXXBL-UHFFFAOYSA-N 1,1,1,3,3,4,4,5,5,5-decafluoropentan-2-one Chemical compound FC(F)(F)C(=O)C(F)(F)C(F)(F)C(F)(F)F GWFGVRFAJMXXBL-UHFFFAOYSA-N 0.000 description 1
- DCEPGADSNJKOJK-UHFFFAOYSA-N 2,2,2-trifluoroacetyl fluoride Chemical compound FC(=O)C(F)(F)F DCEPGADSNJKOJK-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- HYXIRBXTCCZCQG-UHFFFAOYSA-J [C+4].[F-].[F-].[F-].[F-] Chemical compound [C+4].[F-].[F-].[F-].[F-] HYXIRBXTCCZCQG-UHFFFAOYSA-J 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- IYRWEQXVUNLMAY-UHFFFAOYSA-N carbonyl fluoride Chemical compound FC(F)=O IYRWEQXVUNLMAY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- VBZWSGALLODQNC-UHFFFAOYSA-N hexafluoroacetone Chemical compound FC(F)(F)C(=O)C(F)(F)F VBZWSGALLODQNC-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
본 발명은 케톤계 불화탄소를 포함하는 식각가스 및 이를 이용한 절연막의 식각방법에 관한 것으로서, 특히 절연막을 식각하는 경우에 식각가스로 MMTCE(million metric tons of carbon equivalent)가 높은 과불화화합물(perfluoro compound, 이하 PFC 라 함) 대신 케톤계 불화탄소를 대체가스로 사용하여 환경오염을 억제하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching gas containing ketone-based fluorocarbons and an etching method of an insulating film using the same. The present invention relates to a method of suppressing environmental pollution by using ketone-based fluorocarbon as an alternative gas instead of PFC.
반도체소자의 제조공정에서 층간절연막으로 사용되는 산화막은 콘택 등의 패턴을 형성하기 위해 식각공정을 반드시 거쳐야 하고, 상기 식각공정에서 주로 사용되는 식각가스는 CF4, C2F6, SF6등의 PFC계열이다.The oxide film used as the interlayer insulating film in the manufacturing process of the semiconductor device must go through an etching process to form a pattern such as a contact, the etching gas mainly used in the etching process is CF 4 , C 2 F 6 , SF 6 PFC series.
상기 PFC계열의 식각가스는 이산화탄소에 비해 지구 온난화지수 값이 수천 ∼ 수만배 이상이기 때문에 환경에 매우 나쁜 영향을 미칠 뿐만 아니라, 이로 인하여 전세계적으로 이의 사용을 규제하려는 움직임이 확산되고 있는 실정이다.The etching gas of the PFC series has not only a very bad effect on the environment because the global warming index value is thousands to tens of thousands or more than carbon dioxide, and thus the movement to regulate its use worldwide is spreading.
참고로, 지난 1999년 3월에 있었던 세계 반도체협회에서 최종 합의된 한국의 PFC계열의 식각가스 감축안은 MMTCE 기준으로 2010년부터 1997년에 대비하여 10%를 감축하기로 합의되었으며, 이는 매년 PFC계열의 식각가스의 사용이 증가하는 점과 감축공정의 수가 한정되어 있다는 점에 비추어 볼 때, 시기적으로 기술적으로 PFC계열의 식각가스 사용에 대한 PFC계열의 식각가스 감축공정의 중요성을 보여주고 있다.For reference, the etch gas reduction plan of Korea's PFC series, which was finally agreed by the World Semiconductor Association in March 1999, was agreed to reduce 10% from 2010 to 1997 on the basis of MMTCE. In view of the increasing use of etch gas and the limited number of reduction processes, it is technically important to show the importance of PFC etch gas reduction process for PFC etch gas use.
상기 PFC계열의 식각가스는 분자의 구조적인 측면에서 산소원자나 불포화 이중결합을 함유하지 않은 불소에 의해 포화된 상태로서 이들의 경우 지구 대기중에 방출되었을 경우 지구 복사 열 에너지를 적외선 영역에서 강한 흡수를 하여 지구온난화를 야기시켜 왔다.The etching gas of the PFC series is saturated with fluorine that does not contain oxygen atoms or unsaturated double bonds in terms of molecular structure, and in this case, when radiated into the atmosphere of the earth, the earth radiant heat energy is strongly absorbed in the infrared region. It has caused global warming.
또한, 상기 PFC계열의 식각가스는 수천에서 수만의 지구온난화지수(global warming potential, GWP)를 갖기 때문에 환경에 매우 나쁜 영향을 끼친다. 지구온난화지수는 이산화탄소를 1로해서 지구온난화에 영향을 미치는 정도를 나타내는 수치로 큰 값을 가질수록 지구온난화에 크게 영향을 미친다는 것을 나타낸다. 지구온난화지수가 환경에 끼치는 영향을 나타낸 수치라면 MMTCE(million metric tons of Carbon equivalent)는 방출량까지 고려한 것으로 실질적으로 지구온난화에 영향을 미치는 정도를 수치화한 것다.In addition, the etching gas of the PFC series has a global warming potential (GWP) of thousands to tens of thousands, which has a very bad effect on the environment. The Global Warming Index is a figure that indicates the degree of impact on global warming with carbon dioxide 1, and the larger the value, the greater the impact on global warming. If the global warming index shows the impact on the environment, the MMTCE (million metric tons of carbon equivalent) takes into account emissions and quantifies the extent to which global warming is actually affected.
MMTCE = 가스방출량(㎏) × GWP × 10-9× (12/44)MMTCE = amount of gas released (kg) × GWP × 10 -9 × (12/44)
예를들어 종래의 PFC계열의 식각가스 중에서 C2F6를 사용한 식각공정을 진행할 때 웨이퍼 한 장당 MMTCE가 보통 1 × 10-9정도 산정될 수 있는데, 이것은 본 공정의 지구온난화효과가 CO2가스 기준으로 약 3.6㎏ 방출되는 것과 같은 효과로서, 일반적으로 반도체 한 개의 칩을 생산하는 데에는 PFC를 20 ∼ 30번 사용해서 식각을 한다는 것을 생각할 때 지구온난화에 막대한 영향을 미치는 문제점이 있다.For example, when performing an etching process using C 2 F 6 among conventional PFC-based etching gases, MMTCE can be estimated to be about 1 × 10 -9 per wafer, which is a global warming effect of CO 2 gas. As an effect of emitting about 3.6 kg as a standard, there is a problem in that the production of a single semiconductor chip has an enormous effect on global warming considering that etching is performed by using 20 to 30 times of PFC.
본 발명은 상기와 같은 문제점들을 해결하기 위한 것으로서, 절연막의 식각가스로 식각특성에 영향을 미치지 않고, MMTCE를 감소시키는 케톤계 불화탄소를 식각가스로 사용하는 절연막의 식각방법을 제공함에 있다.The present invention is to solve the above problems, to provide an etching method of the insulating film using a ketone-based fluoride carbon to reduce the MMTCE as an etching gas without affecting the etching characteristics as the etching gas of the insulating film.
본 발명에 따른 식각가스는 하기 화학식 1의 케톤계 불화탄소를 포함하는 것을 특징으로 한다.Etching gas according to the invention is characterized in that it comprises a ketone-based fluorocarbon of formula (1).
<화학식 1><Formula 1>
OO
∥∥
R1-C-R2 R 1 -CR 2
상기 화학식 1에서 R1, R2는 각각 탄소의 개수가 0 ∼ 2개까지의 불화탄소기이다.In Formula 1, R 1 and R 2 each represent a fluorinated carbon group having 0 to 2 carbon atoms.
이하, 본 발명에 따른 케톤계 불화탄소를 포함하는 식각가스 및 이를 이용한 절연막의 식각방법에 대하여 상세히 설명을 하기로 한다.Hereinafter, an etching gas containing a ketone-based fluorocarbon and an etching method of an insulating layer using the same according to the present invention will be described in detail.
본 발명의 케톤계 불화탄소를 식각가스로 사용하여 종래의 모든 피식각층, 예를 들어 SiO2막 또는 SiON막 또는 Si3N4막 또는 낮은 유전율을 갖는 물질 등을 식각할 수 있다.By using the ketone-based fluorocarbon of the present invention as an etching gas, all conventional etching target layers, for example, SiO 2 film or SiON film or Si 3 N 4 film or a material having a low dielectric constant, can be etched.
본 발명에 따른 보다 바람직한 식각가스는 하기 화학식2 내지 화학식 8을 갖는다.More preferred etching gas according to the present invention has the following formula (2).
상기 케톤계 불화탄소는The ketone fluorocarbon is
<화학식 2><Formula 2>
OO
∥∥
F-C-FF-C-F
의 디플루오로 케톤과,With difluoro ketone,
<화학식 3><Formula 3>
OO
∥∥
F-C-CF3 FC-CF 3
의 (플루오로)(트리플루오로메틸) 케톤과,(Fluoro) (trifluoromethyl) ketone of,
<화학식 4><Formula 4>
OO
∥∥
CF3-C-CF3 CF 3 -C-CF 3
의 (디트리플루오로메틸) 케톤과,(Ditrifluoromethyl) ketone of,
<화학식 5><Formula 5>
OO
∥∥
CF3-C-CF2-CF3 CF 3 -C-CF 2 -CF 3
의 (트리플루오로메틸)(펜타플루오로에틸) 케톤과,(Trifluoromethyl) (pentafluoroethyl) ketone of,
<화학식 6><Formula 6>
OO
∥∥
CF3-CF2-C-CF2-CF3 CF 3 -CF 2 -C-CF 2 -CF 3
의 (디펜타플루오로에틸) 케톤과,(Dipentafluoroethyl) ketone of,
<화학식 7><Formula 7>
OO
∥∥
CF3-C-CF2-CF2-CF3 CF 3 -C-CF 2 -CF 2 -CF 3
의 (트리플루오로메틸)(헵타플루오로프로필) 케톤을 포함한다.(Trifluoromethyl) (heptafluoropropyl) ketone.
이때, 식각가스로 상기 케톤계 불화탄소를 단독으로 사용하거나 2개 이상을 조합한 혼합가스를 사용할 수 있다. 그리고, 상기 케톤계 불화탄소에 Ar, He, N2등의 첨가가스 및 O2, CO 등의 산소원자를 함유하는 첨가가스를 포함하여 사용할 수 있다.In this case, the ketone-based fluorocarbon may be used alone or a mixed gas of two or more may be used as an etching gas. The ketone-based fluorocarbons may include additive gases such as Ar, He, and N 2 , and additive gases containing oxygen atoms such as O 2 and CO.
절연막의 식각공정이 상기 케톤계 불화탄소를 식각가스로 사용하여 실시되는 경우 다음과 같은 특성이 있다.When the etching process of the insulating film is performed using the ketone-based fluorocarbon as an etching gas, it has the following characteristics.
일반적으로 플라즈마 내의 평균 전자에너지는 보통 4 ∼ 10eV이고, 높은 전자 에너지 꼬리(high energy tail in electron energy distribution) 부위의 에너지는 일반적 고밀도 플라즈마에서 20eV를 넘는 반면 케톤계 불화탄소는 1eV 전후 에너지에 의해 분해되므로, 종래의 PFC계 식각가스를 이용한 플라즈마공정에서와 거의 비슷한 양의 불소라디칼이 생성된다.In general, the average electron energy in the plasma is usually 4 to 10 eV, and the energy of the high energy tail in electron energy distribution region exceeds 20 eV in a general high density plasma, whereas ketone-based fluorocarbons are decomposed by energy before and after 1 eV. As a result, almost the same amount of fluorine radicals are produced as in the plasma process using a conventional PFC etching gas.
따라서, 식각속도면에서는 종래 식각가스에 비해 뒤지지 않는다.Therefore, in terms of etching speed, it does not lag behind conventional etching gas.
또, 케톤기(C=O)를 둘러싸고 있는 불화탄소(R1, R2)의 탄소수를 조절함으로써 생성되는 불소계 탄소라디칼의 농도를 조절할 수 있다. 또한, C=O의 추가적인 분해를 통해서 식각정지현상을 방지할 수가 있다.In addition, it is possible to adjust the concentration of fluorinated ketone group carbon radical which is generated by controlling the number of carbon atoms of the fluorocarbon (R 1, R 2) which surround the (C = O). In addition, the etch stop phenomenon can be prevented by further decomposition of C = O.
즉, 상기 케톤기의 추가적인 분해에 의해 산소라디칼이 생성디며, 이러한 산소라디칼은 식각하부면에 재증착된 폴리머를 정상상태에서 제거해주는 역할을 함으로써, 높은 에스펙트비(aspect ratio)의 콘택을 형성하는데 빈번하게 발생할 수 있는 식각정지현상을 방지한다.That is, oxygen radicals are generated by the further decomposition of the ketone group, and these oxygen radicals serve to remove the polymer redeposited on the etching lower surface in a steady state, thereby forming a high aspect ratio contact. This prevents etch stops that can occur frequently.
따라서, 종래의 케톤계 불화탄소를 이용한 식각공정에서는 식각정지현상을 방지하기 위해 추가로 O2가스를 주입하였으나, 본 발명에 따르면 별도로 O2가스를 주입하지 않고도 높은 에스펙트비를 갖는 콘택의 형성이 가능하다. 한편, 상기 케톤기 주위의 C-C결합은 C=O 결합에 비하여 상대적으로 약하기 때문에 플라즈마 내에서 불포화불화탄소 라디칼의 양을 다량 생성시키고, 이들은 상호간의 기체반응을 통해서 재결합되어 식각폴리머를 생성시키므로, 보다 비등방적인 87。 이상의 버티칼한 프로파일을 형성한다.Therefore, in the conventional etching process using ketone-based fluorocarbon, O 2 gas is additionally injected to prevent the etch stop phenomenon. However, according to the present invention, a contact having a high aspect ratio is required without additionally injecting O 2 gas. This is possible. On the other hand, since the CC bond around the ketone group is relatively weak compared to the C═O bond, a large amount of unsaturated fluorocarbon radicals are generated in the plasma, and they are recombined through gas reactions of each other to produce an etching polymer. It forms an anisotropic vertical profile of more than 87 °.
한편, 상기 케톤계 불화탄소를 식각가스로 사용하는 경우 PFC계열의 식각가스보다 MMTCE를 70 ∼ 100% 감소시킬 수 있다.On the other hand, when using the ketone-based fluorocarbon as an etching gas, it is possible to reduce the MMTCE by 70 to 100% than the etching gas of PFC series.
상기 케톤계 불화탄소는 콘택식각, 트렌치식각, 스페이서 식각, 하드마스크 식각, 평탄화식각 등 다양한 식각공정에서 사용될 수 있다.The ketone-based fluorocarbon may be used in various etching processes such as contact etching, trench etching, spacer etching, hard mask etching, and planarization etching.
보다 바람직한 식각조건은 다음과 같다.More preferred etching conditions are as follows.
상기 식각공정은 저밀도 또는 고밀도 플라즈마 식각장비를 사용하여 실시한다. 상기 식각장비의 식각챔버내에 2 ∼ 200sccm의 케톤계 불화탄소를 플로우시키면서, 식각챔버내의 압력을 1 ∼ 100mTorr로 일정하게 유지하고, 기판온도는 0 ∼ 200℃로 유지하면서 실시한다.The etching process is performed using a low density or high density plasma etching equipment. While the ketone-based fluorocarbon of 2 to 200 sccm is flowed into the etching chamber of the etching equipment, the pressure in the etching chamber is kept constant at 1 to 100 mTorr, and the substrate temperature is maintained at 0 to 200 ° C.
여기서, 상기 케톤계 불화탄소에 Ar 또는 He 또는 N2가스등의 첨가가스를 혼합하여 사용하는 경우, 상기 첨가가스는 10 ∼ 300sccm 범위에서 혼합시켜 식각장비 내에 전자밀도를 1010㎠ 이상으로 유지하는 것이 바람직하다.Here, in the case of using an additive gas such as Ar, He, or N 2 gas to the ketone-based fluorocarbon, the additive gas is mixed in the range of 10 to 300sccm to maintain an electron density of 10 10 cm 2 or more in the etching equipment. desirable.
또한, 상기 케톤계 불화탄소에 CO 또는 O2가스 등의 산소원자를 함유하는 첨가가스를 혼합하여 사용하는 경우에는 상기 첨가가스를 10 ∼ 200sccm 범위에서 혼합시키는 것이 바람직하다.In addition, in the case where the ketone-based fluorocarbon is used by mixing an additive gas containing an oxygen atom such as CO or O 2 gas, the additive gas is preferably mixed in the range of 10 to 200 sccm.
그리고, 식각챔버내의 RF 소오스 파워는 300 ∼ 3000W의 범위에서 조절하여 플라즈마 밀도를 유지하고, RF 바이어스 파워는 100 ∼ 3000W의 범위에서 조절하여 1000 ∼ 1500A/min의 식각속도를 유지하는 것이 바람직하다.The RF source power in the etching chamber is preferably adjusted in the range of 300 to 3000 W to maintain the plasma density, and the RF bias power is adjusted in the range of 100 to 3000 W to maintain the etching rate of 1000 to 1500 A / min.
또한, 상기 식각공정시 E-빔, DUV(deep ultra violet) 및 i-라인 포토레지스트를 감광막으로 사용할 수 있다.In addition, during the etching process, E-beam, deep ultra violet (DUV) and i-line photoresist may be used as the photoresist.
상기한 바와같이 본 발명에 따른 케톤계 불화탄소를 포함하는 식각가스 및 이를 이용한 절연막의 식각방법은, 절연막의 식각공정시 사용되는 PFC계열의 식각가스와 동일한 식각특성을 가지면서도 환경친화적인 한편, 식각속도를 향상시키고 식각정지현상을 방지하며, PFC가스를 근원적으로 사용하지 않음으로써 식각장비에 부가적인 PFC 처리시설을 부착할 필요가 없으므로 설비투자에 비용을 절감할 수 있는 이점이 있다.As described above, the etching gas containing the ketone-based fluorocarbon and the etching method of the insulating film using the same have the same etching characteristics as those of the PFC-based etching gas used in the etching process of the insulating film, while being environmentally friendly. By improving the etching speed, preventing the etch stop phenomenon, and do not use PFC gas as a base, there is no need to attach additional PFC treatment facilities to the etching equipment, which can reduce the cost of equipment investment.
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| KR20210136400A (en) * | 2020-05-07 | 2021-11-17 | 아주대학교산학협력단 | Plasma etching method |
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