KR20000076656A - Microlithography reduction objective and projection exposure apparatus - Google Patents

Abstract

The present invention provides a short wavelength, preferably including a first mirror S1, a second mirror S2, a third mirror S3, a fourth mirror S4, a fifth mirror S5, and a sixth mirror S6. More specifically, it relates to a microlithographic projection objective lens device for wavelengths less than 100 nm.

The invention relates to a mirror in which the image-side numerical aperture is NA ≥ 0.15 and the mirror closest to the object to be exposed, preferably closest to the wafer, corresponds to the used diameter D of the mirror at which the image-side optical working distance is at least close to the wafer. And / or the image-side optical working distance is at least one third of the mirror's used diameter D and the length from 20 mm to 30 mm and / or the image-side optical working distance is at least 50 mm, preferably 60 mm. It is characterized in that it is arranged to be.

Description

Microlithography Miniaturized Objectives and Projection Exposure Equipment {MICROLITHOGRAPHY REDUCTION OBJECTIVE AND PROJECTION EXPOSURE APPARATUS}

The present invention relates to a microlithographic objective lens, a projection exposure apparatus including the objective lens, and a method of manufacturing an integrated circuit using the same.

It has been proposed to use lithography operating at wavelengths below 193 nm to image structures with resolutions below 130 nm. In fact, such lithography systems have been proposed for extreme ultraviolet (EUV) ranges with wavelengths of [lambda] = 11 nm or [lambda] = 13 nm producing structures less than 100 nm. The resolution of a lithography system is represented by:

Where k ₁ is the intrinsic parameter of the lithographic process, λ is the wavelength of incident light and NA is the image-side numerical aperture of the system. For example, assuming a numerical aperture of 0.2, imaging a 50 nm structure with 13 nm radiation requires a relatively simple process with k ₁ = 0.77. If k ₁ = 0.64, imaging of the 35 nm structure is possible with 11 nm radiation.

In EUV-region imaging systems, reflective systems with multilayer coatings are used as optical components. Mo / Be multilayers are used as multilayer coating systems for systems operating at λ = 11 nm, while Mo / Si systems are used at λ = 13 nm. With a reflectance of approximately 70% multilayer coating, it is desirable to use as few optical components as possible in applications such as EUV projection objective microlithography to achieve sufficient light intensity. Specifically, a system with six mirrors and numerical aperture (NA) = 0.20 was used to increase light intensity and allow correction of imaging errors.

Six-mirror systems for microlithography are known from US 5,686,728, EP 779,528 and US 5,815,310. The projection lithography system according to US Pat. No. 5,686,728 has a projection objective with six mirrors. Each reflective mirror surface is formed as non-spherical. The mirror is arranged along one common optical axis, whereby a light path without shielding is obtained. Since the projection objective known from US Pat. No. 5,686,728 is used only for UV-light with a wavelength of 100-300 nm, the mirror of the projection objective has a very high asphericity of approximately ± 50 μm and a very large angle of incidence of about 38 °. Have Even after narrowing down the aperture to NA = 0.2, the aspherical shape of 25 mu m is maintained from the peak to the peak without decreasing the angle of incidence. Such non-sphericality and angle of incidence cannot be used in the EUV-region due to the high demand for surface quality and the reflectivity of the mirrors according to the state of the art.

Another disadvantage of the objective known from US Pat. No. 5,686,728, which cannot be used in the range λ <100 nm, especially at wavelengths of 11 and 13 nm, is that the distance between the wafer and the mirror closest to the wafer is very small. This short distance allows only the very thin mirrors used in US Pat. No. 5,686,728. Due to the extreme stress on the coating of multilayer systems suitable for 11 and 13 nm wavelengths, these thin mirrors are very unstable.

EP 779,528 discloses a projection objective with six mirrors for use in EUV-lithography, in particular also at wavelengths of 13 nm and 11 nm. The projection objective also has the disadvantage that at least two of the six mirrors in total have a very high asphericity of 26 or 18.5 μm. In particular, in the apparatus known from EP 779,528, the instability or negative mechanical working distance is obtained because the optical working distance between the mirror and the wafer adjacent to the wafer is very small.

It is therefore an object of the present invention to provide a projection objective device suitable for short wavelengths, in particular less than 100 nm lithography, which does not have the disadvantages of the prior art described above.

1 is a first embodiment according to the invention with an intermediate image, a freely accessible aperture between the second and third mirrors and a numerical aperture 0.2;

2 is a 6-mirror objective for wavelengths greater than 100 nm as known in the prior art of US Pat. No. 5,686,728.

3 is a second embodiment according to the invention with an aperture between the second and third mirrors in the first mirror.

4 is a third embodiment of the present invention with an aperture on the second mirror and an operating distance of 59 mm.

5 shows an image of the present invention having an image-side optical working distance and a numerical aperture NA of 0.28, and an intermediate image corresponding to the sum of the lengths of 20 to 30 mm and at least 1/3 of the used diameter of the mirror closest to the wafer; The fourth embodiment.

6 is a fifth embodiment of the present invention of a system with an intermediate image and a numerical aperture NA of 0.30.

7a and 7b show the diameters used in the differently illuminated lightfields.

* Description of the symbols for the main parts of the drawings *

2: reticle plane 4: wafer plane

According to one aspect of the invention, in a projection objective with six mirrors, the numerical aperture on the image side corresponds to the used diameter of the mirror and / or the wafer side has a numerical aperture NA &gt; 0.15 and at least the wafer side optical working distance is at least close to the wafer. The mirror closest to the wafer is such that the optical working distance corresponds to at least one third of the used diameter of the mirror plus the length of 20 to 30 mm and / or the wafer-side optical working distance is at least 50 mm, preferably 60 mm. By placement.

According to another embodiment of the present invention, the projection objective lens having six mirrors has an image-side numerical aperture, NA greater than 0.15, and an arc-shaped field width (W) in the wafer lies in a range of 1.0 mm ≤ W, In all mirrors, the non-spherical peak-to-valley deviation (A) for the sphere that best fits the area of use is

A ≤ 19 μm-102 μm (0.25-NA)-0.7 μm / mm (2mm-W)

Limited by

Particularly preferably the non-spherical peak-to-peak deviation A in all mirrors is

A ≤12 μm-64 μm (0.25-NA)-0.3 μm / mm (2mm-W)

Limited to

In another embodiment of the present invention, when the numerical aperture NA ≥ 0.15 and the wafer-side width Ｗ ≥ 1 mm of the arc-shaped field, the angle of incidence (AOI) for the surface normals of all the beams in all mirrors is

AOI ≤ 23 °-35 ° (0.25-NA)-0.2 ° / mm (2mm-W)

Limited to

It is also possible to combine the individual embodiments described above for achieving the object of the invention; For example, in a particularly preferred embodiment a total of three conditions can be met. That is, the optical working distance is greater than 50 mm at NA = 0.20, and the non-spherical peak-to-peak deviation and incidence angle lie in the above-mentioned range.

The asphericity described in this publication relates to the peak-to-peak or peak-valley (PV) deviation (A) of the non-spherical surface relative to the sphere that best fits the area of use. This is approximated by a sphere in an embodiment, its center point lies on the drawing axis of the mirror, and in the meridian the non-spheres meet the top and bottom points of the area of use. The indication of the angle of incidence relates to the angle between the incident light beam and the surface normal at the site of incidence. The maximum angle of any ray hitting any mirror, usually the bundle limiting ray, is presented. Here and below, the diameter used generally means the envelope circle diameter of the non-circular use area.

Especially preferably, the wafer-side optical working distance is 60 mm.

The above-described objective lens can be used not only for EUV, but also for other wavelengths, as in the present invention. In order to prevent degradation of the image quality, for example by central shadowing, the mirror of the projection objective lens is preferably arranged so as not to shield the light. For ease of assembly and adjustment of the system, in another embodiment of the present invention is preferably A mirror surface is formed on the surface that is rotationally symmetric about the main axis PA. In order to obtain a compact design of the objective lens in an accessible aperture and to implement a light path without shielding, the projection objective device is preferably implemented as a system with intermediate images. It is particularly preferable for the intermediate image to be formed behind the fourth mirror. In this superstructure, it is possible for the iris to lie in front of the object opening with a small aperture and the conjugate aperture diaphragm plane to be imaged at the focal point of the last mirror. This configuration ensures telecentric ray paths in image space.

In one embodiment of the invention, a freely accessible aperture is arranged optically and physically between the second and third mirrors. The distance between the first mirror and the third mirror versus the distance between the first mirror and the second mirror,

0.5 〈S1S3 / S1S2 〈2

If it is in the range of, a good accessibility of the aperture is given. In order to prevent shadowing of the bundle from the third mirror to the fourth mirror by the aperture disposed between the second mirror and the third mirror, the ratio of the distance between the second mirror and the aperture to the distance between the third mirror and the aperture,

0.5 <S2 opening / (S3 opening) <2

It is desirable to be in the range. By the straight configuration as in the first embodiment of the present invention, each load in the front portion of the projection objective lens can be reduced.

The diaphragm physically placed between S2 and S1 should be formed at least partially as a narrow ring, thus avoiding cutting of the bundle from S1 to S2. In this embodiment there is a risk that unwanted direct light or light reflected at S1 and S2 passes through the aperture outside the ring and reaches the wafer. By placing the aperture optically between the second and third mirrors and physically near the first mirror, this mechanically simple arrangement of the aperture enables effective blocking of unwanted light rays. The iris can be implemented to lie behind the first mirror or as an opening in the first mirror.

In another embodiment of the invention, the aperture is arranged at or near the second mirror. Placing the aperture in the mirror has the advantage that the aperture can be simply implemented mechanically. Here, in order to ensure a light path without shielding at a small angle of incidence, the ratio of the distance S1S3 between the first and third mirrors and the distance S1S2 between the first and second mirrors is

0.3 ≤ S1S3 / S1S2 ≤2.0

Is set in the range of

The ratio of the distance S2S3 between the second and third mirrors and the distance S3S4 between the third and fourth mirrors is

0.7 ≤S2S3 / S3S4 ≤1.4

Lies in the range of.

In order to correct image errors in the six-mirror system, in a preferred embodiment a total of six mirrors are formed aspheric. As an alternative, however, if up to five mirrors are formed aspherically, the manufacturing technique is simplified. In this case, one mirror, preferably the largest mirror, may be spherical in the shape of four mirrors. It is particularly preferable that the arrangement of the second to sixth mirrors is in the order of concave-convex-concave-convex-concave.

In order to obtain a resolution of at least 50 nm, it is preferred that the design portion of the rms-wavefront of the system is at most 0.07 lambda, preferably 0.03 lambda.

In the embodiment of the present invention, preferably, the image side of the objective lens is always telecentric. In projection systems operated with reflective masks, telecentric light paths on the object side are not possible without illumination through a beam splitter as strongly known, for example, in JP-A-95 28 31 16. Thus, the chief ray angle in the reticle is chosen to ensure illumination without shadowing. In a system with a transmission mask, the transmission objective can be designed telecentric on the object side. In this embodiment, the first mirror is preferably formed concave. Overall, the telecentric error in the wafer 10 should not exceed 10 mrad, preferably 5 mrad, particularly preferably 2 mrad. This allows the variation in magnification to be kept at an acceptable limit in terms of definition.

This embodiment of the invention includes a mirror, a reduced three-mirror subsystem and a two-mirror subsystem.

In addition to the projection objective lens device according to the present invention, the present invention provides a projection exposure device comprising at least one of the above devices. The projection exposure apparatus in the first embodiment includes a reflective mask (alternatively, a transmission mask is also used). The projection exposure apparatus comprises an illumination device for illuminating an external axis arc-shaped field, and it is particularly preferred that the system be formed with an arc-shaped field scanner. Preferably if the secant length of the scan slot is at least 26 mm and the ring width is greater than 0.5 mm, uniform illumination is achieved.

Hereinafter, with reference to the accompanying drawings of the present invention will be described in detail.

1, 3 and 4 show the arrangement of a six-mirror objective lens according to the invention. The objective lens device has an optical working distance corresponding at least to the diameter of use of the mirror closest to the wafer. 2 shows a system according to the prior art for wavelengths in excess of 100 nm, for example as known from US Pat. No. 5,686,728. Hereinafter, in all embodiments the same parts have the same reference numerals and the following names are used:

The first mirror S1, the second mirror S2, the third mirror S3,

Fourth mirror S4, fifth mirror S5, sixth mirror S6.

1 shows a six-mirror-projection objective according to the invention with a ray path from the reticle plane 2 to the wafer plane 4. A particular illustrated embodiment of the system according to the invention has a mirror S1 for generating a virtual image of an object with a magnification β> 0. The three-mirror system formed by (S2), (S3) and (S4) provides a reduced image of the virtual image as the intermediate image (Z). Finally, two-mirror systems S5 and S6 image the intermediate image Z into the wafer plane 4 under the telecentric condition. Since the aberrations of the three-mirror and two-mirror subsystems are balanced with each other, the overall system is of high quality sufficient for integrated circuit fabrication applications.

The physical aperture B is disposed between the second mirror S2 and the third mirror S3. As shown in FIG. 1, the diaphragm lies in access to the light path between the second mirror S2 and the third mirror S3. The optical working distance between the mirror plane closest to the wafer and the wafer plane 4, which is the fifth mirror S5 in this embodiment, is larger than the used diameter of the mirror S5. That is, the following conditions are met:

Used diameter of (S5) optical distance between (S5) and wafer plane (4).

Alternatively, other distance conditions are possible, such that the optical working distance is greater than the sum of 1/3 and 20 mm of the used diameter of the mirror S5 closest to the wafer, or greater than 50 mm. Although the optical working distance is 60 mm in this embodiment, it is not limited to this.

This optical working distance ensures a sufficient mechanical working distance of greater than zero and enables the use of optical components with sufficient intensity for wavelengths below 100 nm, preferably less than 11 or 13 nm. Optical components for wavelengths λ = 13 nm and λ = 11 nm include, for example, Mo / Si or MO / Be multilayer systems. A typical multilayer system for λ = 13 nm includes 40 Mo / Si layer pairs, and a typical multilayer system for λ = 11 nm has a Mo / Be system of approximately 70 layer pairs. The obtainable reflectance of the system is in the range of approximately 70%. Layer stresses of 350 MPa or more appear in multilayer systems, which cause surface deformation, particularly in the edge regions of the mirror.

The system according to the invention as shown in FIG. 1 has the following:

.

It has a nominal resolution of at least 50 nm or 35 nm at a minimum numerical aperture of NA = 0.2 when k ₁ = 0.77 and lambda = 13 nm or k ₁ = 0.64 and lambda = 11 nm. Where k ₁ is a parameter specific to the lithography process.

In addition, the light path of the objective lens shown in FIG. 1 is not shielded. For example, to provide an image format of 26 x 34 mm 2 or 26 x 52 mm 2, the projection objective lens according to the present invention is preferably used in an arc-shaped field scan projection exposure apparatus. The secant length of the scan slot is at least 26 mm.

Depending on the mask used in the projection exposure apparatus, where a transmissive mask such as a stencil mask or a reflective mask can be used, the telecentric system on the image side is formed telecentric or non-telecentric on the object side. Telecentric light paths are only possible with the use of transmission reducing beam splitters in the use of reflective masks on the object side. Unevenness of the mask causes a scale error of the image in object space in the non-telecentric ray path. Thus, since the chief ray angle in the reticle is preferably less than 10 °, the conditions for reticle flatness are within the technically feasible range. The system of the invention according to FIG. 1 has a wafer image side telecentric error of 1 mrad at a numerical aperture of 0.2.

Since the image side telecentric is high, the entrance pupil of the last mirror S6 lies in or near its focal point. Therefore, in such a system having an intermediate image, the opening B lies mainly between the first mirror S1 and the third mirror S3 with respect to the light emission path in the front, the small opening of the objective lens portion, and conjugated. The aperture stop plane is imaged at the focal point of the last mirror.

In the illustrated embodiment, the entire mirrors S1-S6 are implemented as non-spherical. The maximum sphericity in the area of use is 7.3 μm. The low asphericity of the device according to the invention is particularly desirable in terms of manufacturing technology, since the technical difficulties in the surface treatment of multilayer mirrors increase proportionally strongly with increasing the aspheric deviation and aspheric slope. .

The largest angle of incidence of the six-mirror objective occurs at mirror S5 and is 18.4 °. In the mirror S5 a maximum incident angle variation of about 14.7 ° appears. The wavefront error at λ = 13 nm is better than 0.032 λ, the center shift of the point image is less than 3 nm, and the static, magnified distortion is 4 nm.

The aperture disposed between the second mirror and the third mirror is freely accessible. In the device shown, the following conditions,

0.5 〈S1S3 / S1S2 〈2 and

0.5 <S2 opening / (S3 opening) <2

If this is satisfied, free accessibility of the aperture at the angle of incidence to the mirror, which can be allowed at the same time, and shadowing of the bundle extending from (S3) to (S4) by the aperture is prevented. Here, the abbreviation S1S3 denotes the mechanical distance between the individual parts, here mirrors S1 and S3. And "S2 opening" represents the mechanical distance between the vertex of the mirror S2 and the opening. In addition, in a particularly preferred embodiment of the invention according to FIGS. 1, 3 and 4, in order to reduce the angle of incidence on the mirror, the distance from the reticle to S1 is smaller than the distance from S2 to S3. In other words,

Reticle S1 &lt; S2S3.

The reticle is preferably placed far ahead of the first mirror (here S2) along the direction of incident light between the reticle and the first mirror. In this case, for example, the distance between the reticle and S2 is 80 mm.

Further, in the embodiment of the invention according to Figs. 1 and 3 to 5, the distance between the mirrors S3 and S6 is chosen to be such that mirrors of sufficient thickness can be used, and thicker mirrors can be used as described above. It has strength and stability characteristics that can withstand layer tension. In these systems, the following conditions are particularly preferred:

0.3 (used diameter of (S3) + used diameter of (S6)) <S3S6.

In Table 1, for example, the parameters of the system shown in FIG. 1 are illustrated by Code V ( ^TM ) names. As the objective lens, a 5x-system with a 26 x 2 mm2 arc-shaped field and a numerical aperture of 0.2 is used. The average image side radius of the system is approximately 26 mm.

2 shows a device of a projection objective lens for microlithography having a wavelength λ <100 nm according to US Pat. No. 5,686,728. The same parts as in FIG. 1 have the same reference numerals. As is evident, the distance between the mirror S5 closest to the wafer and the wafer is significantly smaller than the diameter of the mirror, and in this case lies in the range of approximately 20 mm. This causes strength problems due to extreme layer tension in the EUV-region. The system according to the prior art also has a very high aspherical degree of ± 50 μm and an angle of incidence of 38 °. Such non-sphericality and angle of incidence cannot be realized in the EUV-region when considering manufacturing and coating techniques.

3 shows another embodiment of a six-mirror system according to the invention. Here the aperture is placed on the first mirror. The same parts as in FIG. 1 have the same reference numerals in FIG. 3. In this embodiment as well, the optical working distance on the wafer is 60 mm, as in the embodiment according to FIG. 1, and therefore larger than the diameter of the mirror S5 closest to the wafer. Similarly, as in the embodiment according to FIG. 1, a large angle of incidence is avoided in the system since the distance between S2 and S3 is significantly larger than in the prior art according to US Pat. No. 5,686,728.

Unlike in the embodiment according to FIG. 1, in FIG. 3 the aperture B is physically placed in the primary mirror. By this position, highly efficient blocking of the light reflected at S2 is enabled. If the aperture is physically placed between S1 and S2, the light will easily pass through the top of the aperture formed by the narrow ring. In the embodiment shown in FIG. 3, the aperture can be implemented to lie behind or as an opening in the S1-mirror.

Another advantage of this embodiment is the spherical design of the mirror S4. The spherical design has particular advantages in terms of manufacturing because the mirror S4 is the largest mirror of the system. By this design, the sphericity is slightly increased in the area of use and is 10.5 mu m. The largest angle of incidence is seen in mirror S5 and is about 18.6 °. The wavefront error is 0.032 λ inside the 1.7 mm wide arc-shaped field when λ = 13 nm. In addition, in order to form the mirror S4 into a slightly aspherical shape having 0.4 mu m, the wavefront error can be kept at 0.031 lambda inside an arc-shaped field of 1.8 mm width when lambda = 13 nm. If the aperture is directly formed on the mirror S1 and the aperture is disposed behind the mirror S1, unwanted light is effectively shielded. The iris is preferably positioned so that the following relation is satisfied:

S2S1 <0.9 x S2 opening.

Table 2 shows the configuration data of the 5x objective lens according to FIG. 3 under Code V ( ^TM ) name. The fourth mirror S4 is formed in a spherical shape. The average radius of the 26 x 1.7 mm 2 image field is 26 mm.

4, another embodiment of the present invention is shown. Here too, the same parts as in the preceding figures have the same reference numerals. Here, the aperture B is optically and physically placed on the secondary mirror or the second mirror S2. Placing the aperture directly on S2 has the advantage that the aperture can be implemented more simply mechanically on the mirror. By the 4x configuration shown in FIG. 4, a wavefront error of 0.021 lambda can be realized inside a 2 mm wide arc-shaped field when lambda = 13 nm. The maximum aspherical degree in the area of use is 11.2 μm, and the maximum incident angle at S5 is 18.3 °. The average arc field radius is 26 mm. According to the invention the optical working distance between the wafer and the mirror S5 closest to the wafer is larger than the diameter of the mirror S5 closest to the wafer, in this embodiment about 59 mm.

Table 3 shows the optical parameters of the embodiment of FIG. 4 by Code V ( ^TM ) name.

Figure 5 shows another embodiment of the present invention. This embodiment includes a mirror S1, a first subsystem with second to fourth mirrors S2-S4, and a second subsystem with fifth and sixth mirrors S5, S6. . A mirror S1 with β> 0 generates a virtual image of the object 2. The virtual image is imaged as an intermediate real image Z by a first sub-system having β <0, formed of second, third and fourth mirrors S2, S3, S4. The second subsystem formed of the fifth and sixth mirrors S5, S6 images the intermediate image Z into the system image of the wafer plane 4. The numerical aperture of the system is NA = 0.28. The working distance between the last mirror S5 and the wafer plane corresponds to the sum of the lengths of 20 to 30 mm and at least 1/3 of the used diameter of the mirror closest to the wafer. The aperture B is placed on the second mirror S2.

Table 4 shows the optical parameters of the embodiment of FIG. 6 by Code V ( ^TM ) name.

FIG. 6 shows a similar, alternative to FIG. 5 with a six-mirror-objective with a field mirror S1 as well as the first and second subsystems shown in FIG. 5. The objective lens generates an intermediate image Z and has an opening B formed on the second mirror S2 similarly as in FIG. 5 and the numerical aperture is NA = 0.30.

The optical parameters of this alternative are shown in Table 5 by Code V ( ^TM ) designation.

7a and 7b define the diameter D used in the above embodiment. For example, the field 100 illuminated on the mirror in FIG. 7A is a rectangular field. The diameter D used is the diameter of the envelope circle 102 including the rectangle 100. Corner 104 of rectangle 100 lies on envelope circle 102. 7b shows a second embodiment. The illuminated field 100 has a kidney shape as seen in the area of use when using the objective lens according to the invention in a microlithographic projection exposure apparatus. Envelope circle 102 completely encloses the kidney shape and meets the kidney shape edge 110 at two points 106 and 108. The diameter D used is obtained as the diameter of the envelope circle 102.

In this way, the present invention provides a six-mirror-projection objective with magnifications of 4x, 5x, and 6x, which is preferably used in EUV-arc field field projection systems. However, other may be used. The 6-mirror projection objective has the resolution required for the image field, and the constituent conditions capable of proper functioning, because the aspheric is sufficiently low, the angle of incidence is sufficiently small, and the space for the mirror carrier is large enough. to be.

As can be seen from the above, according to the present invention, it is possible to provide a projection objective lens device suitable for lithography of less than 100 nm.

Claims (32)

Preferably a projection objective for short wavelength microlithography of less than 100 nm, 6-mirrors (first mirror S1, second mirror S2, third mirror S3, fourth mirror S4, preferably arranged such that the numerical aperture NA on the image side is NA ≥ 0.15, preferably Next to the wafer, there is provided a fifth mirror S5 and a sixth mirror S6, which are placed closest to the object, wherein the fifth mirror, The image-side optical working distance is greater than or equal to the used diameter (D) of the fifth mirror; and / or The image-side optical working distance is at least the sum of the 1/3 of the used diameter D of the fifth mirror and the length from 20 mm to 30 mm; And / or A projection objective characterized in that it is positioned to satisfy one or more of the above conditions, wherein the image-side optical working distance is at least 50 mm, preferably 60 mm. Preferably a projection objective for short wavelength microlithography of less than 100 nm, 6-mirror (first mirror S1 arranged such that the numerical aperture NA on the image side is NA ≧ 0.15 and the arc-shaped field width W on the object to be irradiated, preferably in the wafer, is in the range of 1.0 mm ≦ W ), A second mirror S2, a third mirror S3, a fourth mirror S4, a fifth mirror S5 and a sixth mirror S6), each of the six mirrors best fits. The maximum non-spherical peak-to-valley (PV) deviation (A) from the sphere is A ≤19 μm-102 μm (0.25-NA)-0.7 μm / mm (2mm-W) Projection objective lens having a range of. Preferably a projection objective for short wavelength microlithography of less than 100 nm, The first mirror S1, the second mirror S2, and the third arranged so that the numerical aperture NA on the image side is NA ≥0.15 and the image-side arc-shaped field width W lies in the range of 1.0 mm ≤ W. A mirror S3, a fourth mirror S4, a fifth mirror S5 and a sixth mirror S6, wherein light incident on any of the six mirrors is incident angle AIO with respect to the surface normal this, AOI ≤23 °-35 ° (0.25-NA)-0.2 ° / mm (2 mm-W) Projection objective lens, characterized in that placed in the range of. A projection objective for short wavelength microlithography, A field mirror S1 of β> 0 which produces a virtual image of the object; A first subsystem having a second mirror (S2), a third mirror (S3), and a fourth mirror (S4), wherein β &lt; 0, for imaging the virtual image into an intermediate real image; And And a second subsystem having a fifth mirror (S5) and a sixth mirror (S6), said second subsystem for imaging said intermediate image into a system image on an image plane. The method according to any one of claims 2 to 4, After the object to be irradiated, preferably the mirror after the wafer, The image-side optical working distance is greater than or equal to the used diameter (D) of the mirror after the wafer; And / or The image-side optical working distance is at least the sum of the used diameter of the mirror next to the object and the length of 20 mm to 30 mm; And / or A projection objective further characterized in that it is further positioned to satisfy one or more of the above conditions where the image-side optical working distance is at least 50 mm, preferably 60 mm. The method according to any one of claims 3 to 5, The image-side numerical aperture (NA) is 0.15 &amp;le; NA, the arc-shaped field width (W) in the wafer is 1.0 mm &lt; = W, and each of the mirrors is from the best-fitting sphere to the aspherical maximum aspherical peak-to-band. -Valley (PV) deviation (A) A ≤19 μm-102 μm (0.25-NA)-0.7 μm / mm (2mm-W) Projection objective lens having a range of. 7. A projection objective according to any one of the preceding claims, wherein the mirrors are arranged to form an unshielded light path. 8. Projection objective according to any one of the preceding claims, characterized in that the mirrors have rotational symmetry about the main axis (PA). 9. Projection objective lens according to any one of the preceding claims, characterized in that an intermediate image is formed behind the fourth mirror (S4). 10. The projection objective of claim 9, further comprising an aperture (B) in an optical path positioned between the second mirror (S2) and the third mirror (S3). The projection objective lens of claim 10, wherein a distance between the first mirror, the second mirror, and the third mirror is selected such that the aperture is freely accessible. 12. The ratio of the distance S1S3 between the first mirror and the third mirror to the distance S1S2 between the first mirror and the second mirror, 0.5 〈S1S3 / S1S2 〈2 Projection objective lens, characterized in that the range. 13. The diaphragm B according to any one of claims 1 to 12, wherein the aperture B is located on the first mirror S1 between the second mirror S2 and the third mirror S3. Projection objective lens. The method according to any one of claims 1 to 13, The image-side numerical aperture (NA) is NA ≥ 0.15 and the arc-shaped field width W ≥ 1 mm on the wafer, and the non-spherical peak-to-valley (PA) deviation for the best-fitting sphere, A ≤12 μm-64 μm (0.25-NA)-0.3 μm / mm (2mm-W) Projection objective lens, characterized in that the range. 9. A projection objective according to any one of claims 1 to 8, wherein the aperture (B) is disposed on or near the second mirror (S2). The method of claim 15, The ratio of the distance S1S3 between the first mirror and the third mirror to the distance S1S2 between the first mirror and the second mirror, 0.3 〈S1S3 / (S1S2) 〈2 Is set in the range of The ratio of the distance S2S3 between the second mirror and the third mirror to the distance S3S4 between the third mirror and the fourth mirror, 0.7 〈S2S3 / (S3S4) 〈1.4 Projection objective lens, characterized in that placed in the range of. 17. The projection objective of any one of claims 1 to 16, wherein all mirrors are aspheric. 17. The projection objective of any one of claims 1 to 16, wherein up to five mirrors are aspheric. 19. The method of any one of claims 1 to 18, wherein the second mirror, the third mirror, the fourth mirror, the fifth mirror and the sixth mirror are concave-convex-concave-convex-concave in order. Projection objective lens characterized in that. 20. The projection objective according to any one of claims 1 to 19, wherein the imaging ratio β of the first mirror S1 is positive, preferably 0.5 &lt; β &lt; 1.5. 20. The imaging ratio according to any one of the preceding claims, wherein the imaging ratio of the subsystem formed of the second mirror (S2), the third mirror (S3) and the fourth mirror (S4) is negative, preferably Is -0.5 &gt; β &gt; -1.0. 22. A projection objective according to any one of the preceding claims, wherein the rms-wavefront error of the objective lens is less than 0.07 lambda, preferably 0.03 lambda over the entire image field. 23. The projection objective of claim 22, wherein the width of the field on the image is at least 1.0 mm. 24. The projection objective of any one of claims 1 to 23, wherein the objective lens is telecentric on the image side. 25. The projection objective of claim 24, wherein the objective lens is telecentric on the object side. 25. The projection objective of any one of claims 1 to 24, wherein the chief ray of light is directed toward the optical axis at the object. 27. A projection objective according to any one of claims 9 to 26, wherein one of the mirrors with the minimum focal length lies behind the intermediate image. The distance S3S6 between any one of claims 1 to 27, wherein the distance between the third mirror and the sixth mirror is 0.3 (used diameter of S3 + used diameter of S6) 〈S3S6 Projection objective lens, characterized in that to satisfy. 29. A microlithographic projection exposure apparatus having a projection objective lens according to any one of claims 1 to 28, comprising a reflection mask. A microlithographic projection exposure apparatus having a projection objective lens according to any one of claims 1 to 28, comprising a transmission mask. 31. A microlithographic projection exposure apparatus according to claim 29 or 30, further comprising an illumination system for illuminating the arc-shaped field. 32. A method of manufacturing an integrated circuit using the projection exposure apparatus according to any one of claims 29 to 31.