KR20000061060A - Reaction chamber having multi chamber wall - Google Patents

Abstract

PURPOSE: A reaction chamber having multi chamber walls is provided to prevent a particle from generating and to increase a uniformity of a layer by decreasing the inner space of a chamber walls because of two chamber walls. CONSTITUTION: A reaction chamber having multi chamber walls comprises a first chamber wall(80a), a second chamber wall(80b), a gas injection unit and a heat supplying unit. The second chamber wall is formed on the inner wall of the first chamber, separated a constant interval from the first chamber wall. The gas injection unit supplies reaction gas to the inside of the second chamber wall. The heat supplying unit supplies heat to the inside of the second chamber wall.

Description

Reaction chamber having multi chamber wall

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to manufacturing equipment for semiconductor devices, and in particular, to a reaction chamber having a multi-chamber wall.

The manufacturing process of the semiconductor device is mostly under low pressure close to the vacuum. This is to prevent degradation of product performance and quality as particles are introduced into the manufacturing process. Particles that reduce wafer yield in the manufacturing process of semiconductor devices may be produced from gas supplied to the reaction chamber or reaction by-products generated during wafer processing using the gas from manufacturing facilities related to the manufacturing light, such as a reaction chamber or a gas supply facility. Comes from. The reaction by-products generated during the processing of the wafer may be classified into those generated during the direct processing of the wafer and those generated from the members provided around the wafer in the reaction chamber.

1 is a cross-sectional view showing a conventional reaction chamber.

Referring to FIG. 1, the conventional reaction chamber is provided with a heater 12 on the bottom of the reaction chamber 10 and a first pump 14 on the bottom thereof. The wafer 16 is loaded on the heater 12, and a medium for transferring heat generated from the heater 12 to the wafer 16 is provided between the heater 12 and the wafer 16. This medium includes first and second rings 20, 22, susceptor 24, and silicon cover 26. The susceptor 24 is made of silicon carbide (SiC). The first ring 20 is an outer ring in contact with the wall 28 of the reaction chamber 10. The second ring 22 is provided inward of the first ring 20 and is an intermediate ring having an outer rim on the inner rim of the first ring 20. The inner edge of the first ring 20 is made of a staircase type, and the outer edge of the second ring 22 is made of a staircase as opposed to the staircase type formed on the inner edge of the first ring 20. That is, stairs are formed on the inner and outer edges of the first and second rings 20 and 22 so as to mesh with each other. Accordingly, even if the outer edge of the second ring 22 is placed on the inner edge of the first ring 20, the plane consisting of the first and second rings 20 and 22 becomes flat. On the inner edge of the second ring 22, a step of the same shape as the stairs formed on the inner edge of the first ring 20 is formed. The susceptor 24 is provided on the flat area of the stairs formed in the inner edge of the second ring 22. The thickness of the susceptor 24 has the same thickness as that of the stepped portion of the step formed on the inner edge of the second ring 22. Thus, the surface of the susceptor 24 and the surfaces of the first and second rings 20, 22 are flat surfaces. On the plane consisting of the first and second rings 20, 22 and the susceptor 24 is covered a silicon cover 26 in which the wall 28 of the reaction chamber 10 and the outer rim contact. However, the silicon cover 26 is not covered on the entire area of the plane consisting of the first and second rings 20, 22 and the susceptor 24, but only on some areas. In other words, the silicon cover 26 is covered over the entire area except the area in which the wafer 16 on the susceptor 24 is loaded. Wafer 16 is up / down by wafer lift fingers 32 that pass through heater 12 and susceptor 24. The first ion gauge 34 for measuring the pressure in the reaction chamber 10 is provided between the heater wall 12 and the chamber wall 28 at the bottom under the heater 12 of the reaction chamber 10. In addition, a thermocouple 36 is provided at the bottom between the wafer lift fingers 32 to penetrate the heater 12 and reach below the susceptor 24. The thermo couple 36 regulates the temperature of the heater 12. Transfer chambers 42 each having a second pump 38 and a wafer entrance and exit 40 are provided on the left and right sides of the chamber wall 28 above the wafer 16. The chamber head 44 connected to the second pump 38 and the transfer chamber 42 is installed in a space above the wafer 16 of the reaction chamber 10, and is directly supplied to the reaction chamber 10 directly below the reaction chamber 10. There is a 12-inch wafer 46 that reflects heat from the source gas and heater 12 to the wafer 16 to the wafer. In the center of the 12-inch wafer 46, a pyrometer 48 penetrating the chamber head 44 is provided. Reference numeral 49 is a gas inlet.

In the process of manufacturing a semiconductor device, for example, a hemispherical grain film forming process using the conventional reaction chamber 1, the concentration of heat decreases as the heat dissipation generated from the heater 12 increases, thereby forming. There is a problem that the uniformity of the hemispherical grain film is reduced. In addition, unreacted gases are applied to the walls of the reaction chamber 10, and the process defects are frequently caused by the generation of particles. It is also necessary to directly clean the wall 28 of the reaction chamber 10 for maintenance, which is cumbersome and delays the process time.

The technical problem to be achieved by the present invention is to provide a reaction chamber having a multi-chamber wall in order to suppress particle generation and increase the uniformity of the film formed.

1 is a cross-sectional view showing a conventional reaction chamber.

2 is a cross-sectional view showing a reaction chamber according to the present invention.

3 is a plan view illustrating the first and second chamber walls of FIG. 2.

<Description of the code | symbol about the principal part of drawing>

50 Reaction chamber 52 Heater assembly 56 Wafer

58 ... gas inlet 60 ... first ring 62 ... second ring

64 Susceptor 66 Silicon cover 70 Thermo couple

72 Wafer lift finger 74 Ion gauge

76 ... 2nd pump 78 ... 1st pump 80a ... 1st chamber wall

80b ... second chamber wall 82 ... reflective means 84 ... pyrometer

86 ... gate valve 88 ... transfer chamber 90 ... second ion gauge

In order to achieve the above technical problem, the reaction chamber having a multi-chamber wall according to the present invention, the first chamber wall; A second chamber wall formed to be spaced apart from the inner wall of the first chamber wall at a predetermined interval; Gas injection means for supplying reaction gases into the space inside the second chamber wall; And heat supply means for supplying heat to the space inside the second chamber wall.

Here, the material of the second chamber wall is preferably sus (SUS).

According to this, since the space inside becomes small, the concentration of the heat supplied from the heat supply means becomes high, increasing the uniformity and facilitating the cleaning of the chamber walls.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the present invention can be modified in many different forms, the scope of the invention should not be construed as limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art.

2 is a cross-sectional view showing a reaction chamber having a multi-chamber wall in accordance with the present invention. As shown, the reaction chamber according to the invention has two chamber walls. In other words, the first chamber wall (80a) forms the outer wall of the reaction chamber, the second chamber wall (80b) is formed so as to be spaced apart from the first chamber wall (80a) at a predetermined interval therein There is this. In more detail the configuration of the reaction chamber according to a preferred embodiment of the present invention including such features are as follows.

Referring to FIG. 2, a heater assembly 52 is installed below the inside of the reaction chamber 50. The heater assembly 52 is composed of quartz 52d provided between the first to third isolators 52a, 52b and 52c made of pure carbon and the first to third isolators 52a, 52b and 52c. . The wafer 56 is loaded on the heater 52, and a medium for transferring heat generated from the heater 52 to the wafer 56 is provided between the heater 52 and the wafer 56.

The medium includes first and second rings 60, 62, susceptor 64, and silicon cover 66. The susceptor 64 is made of silicon carbide (SiC). The first ring 60 is an outer ring in contact with the wall of the reaction chamber 50. The second ring 62 is provided inward of the first ring 60 and is an intermediate ring having an outer rim on the inner rim of the first ring 60. The inner edge of the first ring 60 is made of a staircase type, and the outer edge of the second ring 62 is made of a staircase opposite to the staircase type formed on the inner edge of the first ring 60. That is, stairs are formed on the inner and outer edges of the first and second rings 60 and 62 so as to mesh with each other. Accordingly, even if the outer edge of the second ring 62 is placed on the inner edge of the first ring 60, the plane consisting of the first and second rings 60 and 62 becomes flat. A step of the same shape as that of the step formed in the inner edge of the first ring 60 is formed on the inner edge of the second ring 62. The susceptor 64 is provided on the flat area of the stairs formed in the inner edge of the second ring 62. The thickness of the susceptor 64 has the same thickness as that of the stepped portion of the step formed on the inner edge of the second ring 62. Thus, the surface of the susceptor 66 and the surfaces of the first and second rings 60, 62 are flat surfaces. On the plane consisting of the first and second rings 60 and 62 and the susceptor 64 is covered a silicon cover 66 in which the wall of the reaction chamber 50 and the outer rim contact. However, the silicon cover 66 is not covered on the entire area of the plane consisting of the first and second rings 60 and 62 and the susceptor 64 but only on some areas. In other words, the silicon cover 66 is covered over the entire area except the area where the wafer 56 on the susceptor 64 is loaded.

Wafer 56 is up / down by wafer lift fingers 72 passing through heater 52 and susceptor 64. A first ion gauge 74 for measuring the pressure in the reaction chamber 50 is provided between the heater wall 52 and the bottom chamber wall below the heater 52 of the reaction chamber 50. In addition, a thermocouple 70 is provided at the bottom between the wafer lift fingers 72 to penetrate the heater 52 and extend below the susceptor 64. The thermo couple 70 adjusts the temperature of the heater 52. One end of the reaction chamber 50 is provided with a first pump 78. The first pump 78 is a high vacuum turbopump used to lower the pressure below the reaction chamber 50 close to vacuum. This first pump 78 has a pumping capacity of about 300 lpm (liter per minute).

The reaction chamber 50 is surrounded by the first chamber wall 80a. In particular, the chamber head serving as the upper cover is made of aluminum. The second chamber wall 80b is provided inside the first chamber wall 80a. The material of the second chamber wall 80b is preferably made of sus (SUS), but is not necessarily limited thereto.

3 schematically shows a first chamber wall 80a and a second chamber wall 80b. As shown in FIG. 3, the first chamber wall 80a and the second chamber wall 80b are spaced apart from each other. Therefore, the space inside the reaction chamber 50 in which the process is substantially made narrower. As the inner space of the reaction chamber 50 becomes narrower as described above, the degree of heat dissipation from the heater 52 decreases, thereby increasing the concentration of heat, thereby improving the uniformity. In addition, it may have the same effect as removing unreacted gases that are applied to the first chamber wall 80a which is the outer wall of the chamber during the process and cause particle generation. In addition, since the cleaning operation can be performed in a separate space after the first chamber wall 80a is separated during the maintenance time, the maintenance time is shortened and the maintenance method is simplified.

Subsequently, referring again to FIG. 1, reflecting means 82 is provided below the chamber head above the first chamber wall 80a. The reflecting means 82 prevents the source gas supplied to the reaction chamber 50 from diffusing above the reaction chamber 50 to increase the frequency of reaction between the wafer 56 and the source gas, and from the heater 52 It serves to make the heat distribution of the wafer 56 uniform throughout the heat supplied to the wafer 56. As the reflecting means 82, a wafer having a larger area than the wafer 56, for example, a 12-inch wafer, can be used. In the middle of the reflecting means 82, a pyrometer 84 penetrating the chamber head of the first chamber wall 80a and the second chamber wall 80b is provided. This pyrometer 84 is for measuring the temperature of the reflecting means 82.

Meanwhile, a second pump 76 is installed at one side of the reaction chamber. This second pump 76 is a gross pump and has a pumping capacity of about 1100 lpm as a pump for lowering the pressure in the reaction chamber 50. On the opposite side of the second pump 76 is a transfer chamber 88 having a wafer entrance 86. In addition, a second ion gauge 90 is installed in the chamber head between the reflecting means 82 and the transfer chamber 80. The second ion gauge 90 is a spare for replacing the first ion gauge 74. It is an ion gauge. Reference numeral 58 is for supplying a source gas as a gas inlet.

While many details are set forth in the foregoing description, they should be construed as illustrative of preferred embodiments rather than to limit the scope of the invention. Therefore, the scope of the present invention should not be defined by the described embodiments, but should be determined by the technical spirit described in the claims.

As described above, according to the reaction chamber having a multi-chamber wall according to the present invention, since the space inside the reaction chamber becomes narrower due to the two chamber walls, the degree of heat concentration is reduced because the heat from the heater is reduced. As it increases, the uniformity is improved, and it can have the same effect as removing unreacted gases that were applied to the chamber outer wall during the process to cause particle generation.In addition, the chamber outer wall is separated after maintenance. Cleaning can be performed in the space of the machine, which shortens the maintenance time and simplifies the maintenance method.

Claims (2)

A first chamber wall; A second chamber wall formed to be spaced apart from the inner wall of the first chamber wall at a predetermined interval; Gas injection means for supplying reaction gases into the space inside the second chamber wall; And And a heat supply means for supplying heat to the space inside the second chamber wall. The method of claim 1, Reaction chamber having a multi-chamber wall, characterized in that the material of the second chamber wall is sus (SUS).