KR20000044584A - Image sensor having high photo sensitivity - Google Patents
Image sensor having high photo sensitivity Download PDFInfo
- Publication number
- KR20000044584A KR20000044584A KR1019980061083A KR19980061083A KR20000044584A KR 20000044584 A KR20000044584 A KR 20000044584A KR 1019980061083 A KR1019980061083 A KR 1019980061083A KR 19980061083 A KR19980061083 A KR 19980061083A KR 20000044584 A KR20000044584 A KR 20000044584A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- light receiving
- receiving element
- image sensor
- light
- Prior art date
Links
- 206010034972 Photosensitivity reaction Diseases 0.000 title abstract description 3
- 230000036211 photosensitivity Effects 0.000 title abstract description 3
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 58
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 23
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 11
- 206010034960 Photophobia Diseases 0.000 description 9
- 208000013469 light sensitivity Diseases 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
Abstract
Description
본 발명은 이미지센서(Image sensor) 제조방법에 관한 것으로, 특히 높은 광감도를 갖는 이미지센서 제조방법에 관한 것이다.The present invention relates to a method of manufacturing an image sensor, and more particularly to a method of manufacturing an image sensor having a high light sensitivity.
일반적으로, 이미지센서라 함은 광학 영상(optical image)을 전기 신호로 변환시키는 반도체소자로서, 이중 전하결합소자(CCD : charge coupled device)는 개개의 MOS(Metal-Oxide-Silicon) 커패시터가 서로 매우 근접한 위치에 있으면서 전하 캐리어가 커패시터에 저장되고 이송되는 소자이며, CMOS(Complementary MOS; 이하 CMOS) 이미지센서는 제어회로(control circuit) 및 신호처리회로(signal processing circuit)를 주변회로로 사용하는 CMOS 기술을 이용하여 화소수만큼 MOS트랜지스터를 만들고 이것을 이용하여 차례차례 출력(output)을 검출하는 스위칭 방식을 채용하는 소자이다.In general, an image sensor is a semiconductor device that converts an optical image into an electrical signal. In a double charge coupled device (CCD), individual metal-oxide-silicon (MOS) capacitors are very different from each other. A device in which charge carriers are stored and transported in a capacitor while being in close proximity, and a CMOS (Complementary MOS) image sensor is a CMOS technology that uses a control circuit and a signal processing circuit as peripheral circuits. Is a device that employs a switching method that makes MOS transistors by the number of pixels and sequentially detects the output using them.
이러한 다양한 이미지센서를 제조함에 있어서, 이미지센서의 감광도(photo sensitivity)를 증가시키기 위한 노력들이 진행되고 있는바 그 중 하나가 집광기술이다. 예컨대, CMOS 이미지센서는 빛을 감지하는 광감지부분과 감지된 빛을 전기적 신호로 처리하여 데이터화하는 CMOS 로직회로부분으로 구성되어 있는바, 광감도를 높이기 위해서는 전체 이미지센서 면적에서 광감지부분의 면적이 차지하는 비율(이를 통상 "Fill Factor"라 한다)을 크게 하려는 노력이 진행되고 있지만, 근본적으로 로직회로 부분을 제거할 수 없기 때문에 제한된 면적 하에서 이러한 노력에는 한계가 있다. 따라서 광감도를 높여주기 위하여 광감지부분 이외의 영역으로 입사하는 빛의 경로를 바꿔서 광감지부분으로 모아주는 집광기술이 많이 연구되고 있으며, 그 중 하나가 칼라필터 상에 마이크로렌즈(micro lens)를 형성하는 방법이다. 그런데 이렇게, 집광기술에 의해서 광감도를 향상시키는 방법은, 이미지센서가 더욱더 고집적화되어감에 따라 광감도를 증대시키기에는 어느 정도 한계에 이르고 있다.In manufacturing such various image sensors, efforts are being made to increase the photo sensitivity of the image sensor. For example, the CMOS image sensor is composed of a light sensing portion for detecting light and a CMOS logic circuit portion for processing the detected light into an electrical signal to make data. In order to increase the light sensitivity, the area of the light sensing portion in the overall image sensor area is increased. Efforts have been made to increase the percentage of occupancy (commonly referred to as "Fill Factor"), but there is a limit to such efforts under a limited area since the logic circuit part cannot be removed. Therefore, in order to increase the light sensitivity, a lot of research has focused on the condensing technology that changes the path of light incident to the area other than the light sensing part and collects the light sensing part, and one of them forms a micro lens on the color filter. That's how. However, the method of improving the light sensitivity by the condensing technology has reached a certain limit to increase the light sensitivity as the image sensor becomes more highly integrated.
따라서, 광감지소자(포토다이오드) 상에 적층된 박막(절연막)들에 의해 광투과도가 저하되는 것을 방지하여 광감도를 향상시켜야 한다.Therefore, the light transmittance must be prevented from being lowered by the thin films (insulating films) stacked on the light sensing element (photodiode) to improve the light sensitivity.
도1은 종래의 이미지센서 구조를 개략적으로 나타낸 단면도로서, 수광소자(포토다이오드) 상에 적층된 층들의 구조들을 보여주고 있다.1 is a cross-sectional view schematically showing a conventional image sensor structure, and shows structures of layers stacked on a light receiving element (photodiode).
도1을 참조하면, 실리콘기판(101)에 포토다이오드와 같은 수광소자(102)가 형성되고, 그 상부에 PMD(pre-metal dielectrics)층(103)이 형성되며, 그 상부에 제1금속층(104)과 IMD(inter-metal dielectrics)층(105), 제2금속층(106)이 차례로 형성된다. 제2금속층(106) 상에는 소자보호를 위한 보호막으로서 산화막(107)과 질화막(108)이 차례로 적층되며, 그 위로 칼라이미지센서의 경우에는 칼라필터어레이(CFA : color filter array)(109)와 OCM(over coating material)층(110)이 차례로 형성된다. 그리고 그 위로 집광을 위한 마이크로렌즈(도시되지 않음)가 형성된다.Referring to FIG. 1, a light receiving device 102, such as a photodiode, is formed on a silicon substrate 101, and a pre-metal dielectrics (PMD) layer 103 is formed thereon, and a first metal layer (top) is formed thereon. 104, an inter-metal dielectric layer 105, and a second metal layer 106 are formed in this order. An oxide film 107 and a nitride film 108 are sequentially stacked on the second metal layer 106 as a protective film for protecting the device, and in the case of a color image sensor, a color filter array (CFA) 109 and an OCM are disposed thereon. (over coating material) layer 110 is formed in sequence. And a microlens (not shown) for condensing is formed thereon.
OCM층(110)은 마이크로렌즈의 균일한 제조와 포커스 길이(focal length) 조절을 목적으로 적용되는 것으로서, 마이크로렌즈 물질과 유사한 복합다중체(polymer) 또는 마이크로렌즈 물질과 굴절률이 유사한 산화막이 주로 이용된다. 칼라필터어레이(109)의 재료로는 염색된 포토레지스트와 같은 복합다중체가 주로 이용된다. PMD층(103) 및 IMD층(105)은 통상 실리콘산화물계 박막이 적용된다.The OCM layer 110 is applied for the purpose of uniform manufacturing of the microlenses and for adjusting the focal length, and a composite polymer similar to the microlens material or an oxide film having a refractive index similar to the microlens material is mainly used. do. As the material of the color filter array 109, a composite multimer such as a dyed photoresist is mainly used. As the PMD layer 103 and the IMD layer 105, a silicon oxide thin film is usually applied.
이렇듯, 종래의 CMOS 이미지센서에서는, DLM(double level metalization) 또는 TLM(triple level metalization)을 기본으로 한 BEOL(back end of line) 공정기술을 바탕으로 제조되어 왔다. 그런데, 마이크로렌즈, OCM층, 및 칼라필터어레이를 통과한 가시광선의 강도는 외부에서 입사되는 강도의 50%정도이며, 이 정도의 강도를 갖는 빛이 보호막, IMD층 및 PMD층을 통과하게 되는바, 이때 각 층의 굴절률, 흡광계수(extinction coefficient)나 계면에 의해 굴절, 반사, 투과 간섭이 일어나게 된다. 결국 수광소자에 입사되는 빛은 이상의 상호작용에 의해 칼라필터어레이를 통과한 빛 강도보다 상당히 감소된 강도를 가지게 된다.As such, the conventional CMOS image sensor has been manufactured based on a back end of line (BEOL) process technology based on double level metalization (DLM) or triple level metalization (TLM). However, the intensity of visible light passing through the microlens, the OCM layer, and the color filter array is about 50% of the intensity incident from the outside, and the light having this intensity passes through the protective film, the IMD layer, and the PMD layer. At this time, the refractive index, extinction coefficient or interface of each layer causes refractive, reflection, and transmission interference. Eventually, the light incident on the light receiving element has a strength that is significantly reduced than the light intensity passing through the color filter array due to the above interaction.
따라서 종래에는 원래 목적으로 하는 강도보다 훨씬 감소된 강도의 빛이 입사되므로 수광소자의 광감도는 상당히 감소하게 된다. 또한, 입사광에 의해 형성되는 광전하는 자연적으로 감소하게되어 단위 시간당 축적되는 전체적인 광전하의 수는 감소하게 된다. 따라서, 소자의 속도가 느릴 경우 단위시간당 처리 가능한 광전하들은 더욱 감소하게되어 소자의 성능에 지대한 영향을 미치게 된다.Therefore, conventionally, since the light of much lower intensity than that of the original target is incident, the light sensitivity of the light receiving element is considerably reduced. In addition, the photocharges formed by the incident light are naturally reduced so that the total number of photocharges accumulated per unit time is reduced. Therefore, when the speed of the device is slow, the photocharges that can be processed per unit time are further reduced, which greatly affects the performance of the device.
본 발명은 상술한 바와 같은 종래기술의 문제점을 해결하기 위하여 안출된 것으로써, 수광소자로 입사되는 빛의 투과도를 향상시켜 광감도를 개선한 이미지센서 및 그 제조방법을 제공하는데 목적이 있다.The present invention has been made to solve the problems of the prior art as described above, and an object of the present invention is to provide an image sensor and a method of manufacturing the same by improving the light sensitivity by improving the transmittance of light incident on the light receiving element.
도1은 종래의 이미지센서 구조를 개략적으로 나타낸 단면도,1 is a cross-sectional view schematically showing a conventional image sensor structure;
도2는 본 발명의 일 실시예에 따른 이미지센서 구조를 개략적으로 나타낸 단면도.Figure 2 is a cross-sectional view schematically showing the image sensor structure according to an embodiment of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
101 : 실리콘기판 102 : 수광소자101: silicon substrate 102: light receiving element
103 : PMD층 104 : 제1금속층103: PMD layer 104: first metal layer
105 : IMD층 106 : 제2금속층105: IMD layer 106: second metal layer
107 : 보호막용 산화막 108 : 질화막107 oxide film for protective film 108 nitride film
109 : 칼라필터어레이 110 : OCM층109: color filter array 110: OCM layer
201 : 옥시나이트라이드층 202 : HSO층201: oxynitride layer 202: HSO layer
203 : 실리콘산화막(캡핑층)203: silicon oxide film (capping layer)
상기 목적을 달성하기 위한 본 발명은 수광소자를 갖는 이미지센서에 있어서, 상기 수광소자 상부에는 선택적으로 옥시나이트라이드층과 HSO층이 적층되어 형성된 것을 특징으로 한다.The present invention for achieving the above object is characterized in that in the image sensor having a light receiving element, the oxynitride layer and the HSO layer is selectively stacked on the light receiving element.
또한 본 발명의 이미지센서 제조방법은 수광소자를 포함하는 관련된 소자들이 형성된 기판을 준비하는 단계; 상기 기판 상에 층간절연막과 금속배선을 형성하는 단계; 소자보호를 위한 산화막을 형성하는 단계; 상기 수광소자가 노출되도록 상기 수광소자 상부지역에 적층된 상기 층간절연막과 상기 산화막을 선택적으로 식각하는 단계; 및 상기 노출된 수광소자 상에 옥시나이트라이드층과 HSO층을 적층하고 평탄화하는 단계를 포함하여 이루어진다.In addition, the image sensor manufacturing method of the present invention comprises the steps of preparing a substrate on which the related elements including the light receiving element is formed; Forming an interlayer insulating film and a metal wiring on the substrate; Forming an oxide film for protecting the device; Selectively etching the interlayer insulating layer and the oxide layer stacked on the light receiving element to expose the light receiving element; And stacking and planarizing an oxynitride layer and an HSO layer on the exposed light receiving device.
이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 첨부된 도면을 참조하여 설명하기로 한다. 종래기술과 동일한 구성요소에 대해서는 동일한 도면부호를 부여하였다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. do. Like reference numerals designate like elements as in the prior art.
도2는 본 발명의 일 실시예에 따른 이미지센서 구조를 개략적으로 나타낸 단면도이다.2 is a cross-sectional view schematically showing an image sensor structure according to an embodiment of the present invention.
도2를 참조하면, 실리콘기판(101)에 포토다이오드와 같은 수광소자(102)가 형성되고, 수광소자(102) 상부 지역에는 옥시나이트라이드층(oxynitride layer)(201)과 HSO(hydrogen silsesquioxane)층(202)이 적층 형성된다. 상기 옥시나이트라이드층(201)은 실리콘 표면에서 반사되는 빛을 방지하기 위한 일종의 비반사층(ARC : anti-reflective coating)이다. HSO(hydrogen silsesquioxane)층(202)은 저 유전물질로서 1.40의 굴절률을 가지며 광투과도가 매우 우수한 물질이다. 한편, 수광소자(102) 지역 이외의 주변회로 등 논리소자 영역에는 PMD(pre-metal dielectrics)층(103), 제1금속층(104)과 IMD(inter-metal dielectrics)층(105), 및 제2금속층(106)이 차례로 형성되고, 제2금속층(106) 상에는 소자보호를 위한 보호막으로서 산화막(107)이 적층되어 있다.Referring to FIG. 2, a light receiving device 102 such as a photodiode is formed on the silicon substrate 101, and an oxynitride layer 201 and hydrogen silsesquioxane (HSO) are formed in an upper region of the light receiving device 102. Layer 202 is laminated. The oxynitride layer 201 is a kind of anti-reflective coating (ARC) to prevent light reflected from the silicon surface. The hydrogen silsesquioxane (HSO) layer 202 is a low dielectric material having a refractive index of 1.40 and excellent light transmittance. Meanwhile, in the logic element region such as a peripheral circuit other than the region of the light receiving element 102, the pre-metal dielectric layer (PMD) layer 103, the first metal layer 104 and the inter-metal dielectric layer (IMD) layer 105, and The second metal layer 106 is formed in this order, and an oxide film 107 is laminated on the second metal layer 106 as a protective film for protecting the device.
상기 HSO층(202)과 상기 소자보호용 산화막(107)은 수평적으로 같은 높이를 유지하여 평탄화되어 있으며, 그 위로 캡핑층으로서 PECVD에 의한 실리콘산화막(203)이 형성되며, 그 상부에는 필요에 따라 칼라필터어레이(CFA : color filter array)(109)와 마이크로렌즈(도시되지 않음)가 차례로 형성된다.The HSO layer 202 and the device protection oxide film 107 are flattened while maintaining the same height horizontally, and a silicon oxide film 203 by PECVD is formed thereon as a capping layer thereon, as necessary. A color filter array (CFA) 109 and a microlens (not shown) are formed in this order.
바람직하게, 옥시나이트라이드층(201)은, SiH4플로우 레이트(flow rate)를 0.3SLM, N20 플로우 레이트를 0.2SLM, N2플로우 레이트를 2SLM으로 하고, 압력을 30Torr, 파워를 1KW로하여, 화학기상증착(CVD)으로 형성하고, 두께는 44nm, 굴절률은 2.5가 되도록 형성한다.Preferably, the oxynitride layer 201 has a SiH 4 flow rate of 0.3 SLM, a N 2 0 flow rate of 0.2 SLM, an N 2 flow rate of 2 SLM, a pressure of 30 Torr and a power of 1 KW. Then, it is formed by chemical vapor deposition (CVD) so as to have a thickness of 44 nm and a refractive index of 2.5.
PMD층(103)은 LPCVD(low pressure CVD) TEOS막과 O3BPSG막을 각각 300nm 및 500nm로 적층되어 이루어진다. IMD층(105)은 실리콘산화막과 SOG막이 적층되어 이루어진다. 칼라필터어레이(109)의 재료로는 염색된 포토레지스트와 같은 복합다중체가 주로 이용된다.The PMD layer 103 is formed by stacking a low pressure CVD (LPCVD) TEOS film and an O 3 BPSG film at 300 nm and 500 nm, respectively. The IMD layer 105 is formed by stacking a silicon oxide film and an SOG film. As the material of the color filter array 109, a composite multimer such as a dyed photoresist is mainly used.
도2와 같은 구조를 갖는 이미지센서를 제조하기 위해서는, 수광소자(102)를 포함하는 관련된 CMOS 소자들이 형성된 웨이퍼를 준비한 다음, PMD층(103), 제1금속층(104)과 IMD층(105), 제2금속층(106), 및 보호막으로서의 산화막(107)을 적층한 다음, 수광소자(102)가 드러나도록 수광소자 상부지역의 적층된 박막들을 선택적으로 식각해 낸다. 이어서, 옥시나이트라이드층(201)과 HSO층(202)을 적층하고, 산화막(107)이 드러나도록 에치백 또는 화학적기계적연마(CMP)하여 평탄화시킨 다. 이후 캡핑층과 칼라필터어레이를 형성한다. HSO 물질은 평탄화 특성이 우수하기 때문에 웨이퍼 상에 만들어진 홈을 매립하는 특성이 우수하기 때문에, 적층된 박막들을 선택적으로 식각하므로써 발생된 홈을 충분히 매립할 수 있다. 이외에도 도2의 구조를 갖는 이미지센서는 당업자라면 여러 가지 다양한 방법으로 실시 구현 할 수 있을 것이다.In order to manufacture an image sensor having a structure as shown in FIG. 2, a wafer on which related CMOS devices including the light receiving device 102 are formed is prepared, and then the PMD layer 103, the first metal layer 104 and the IMD layer 105 are prepared. The second metal layer 106 and the oxide film 107 as a protective film are stacked, and the stacked thin films in the upper region of the light receiving device are selectively etched to expose the light receiving device 102. Subsequently, the oxynitride layer 201 and the HSO layer 202 are laminated, and planarized by etching back or chemical mechanical polishing (CMP) to expose the oxide film 107. Thereafter, the capping layer and the color filter array are formed. Since the HSO material has excellent planarization characteristics, the grooves formed on the wafer are excellent in filling the grooves generated by selectively etching the stacked thin films. In addition, the image sensor having the structure of FIG. 2 may be implemented by those skilled in the art in various ways.
본 발명의 기술 사상은 상기 바람직한 실시예에 따라 구체적으로 기술되었으나, 상기한 실시예는 그 설명을 위한 것이며 그 제한을 위한 것이 아님을 주의하여야 한다. 또한, 본 발명의 기술 분야의 통상의 전문가라면 본 발명의 기술 사상의 범위내에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.Although the technical idea of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.
본 발명은 광투과도가 우수한 HSO층을 수광소자 상에 선택적으로 형성하여 수광소자로 입사되는 광의 투과도를 향상시킨 것으로, 종래의 이미지센서 보다 우수한 광감도를 가지는 제품을 제조할 수 있으며, 동시에 소자의 신뢰성도 확보하게 된다.The present invention is to improve the transmittance of light incident on the light receiving element by selectively forming an HSO layer having excellent light transmittance on the light receiving element, it is possible to manufacture a product having a superior light sensitivity than the conventional image sensor, at the same time the reliability of the device Also secured.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980061083A KR20000044584A (en) | 1998-12-30 | 1998-12-30 | Image sensor having high photo sensitivity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980061083A KR20000044584A (en) | 1998-12-30 | 1998-12-30 | Image sensor having high photo sensitivity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20000044584A true KR20000044584A (en) | 2000-07-15 |
Family
ID=19567839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980061083A KR20000044584A (en) | 1998-12-30 | 1998-12-30 | Image sensor having high photo sensitivity |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20000044584A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100700264B1 (en) * | 2001-06-28 | 2007-03-26 | 매그나칩 반도체 유한회사 | Method for fabricating color filter of image sensor |
| KR100776145B1 (en) * | 2001-06-30 | 2007-11-15 | 매그나칩 반도체 유한회사 | Image sensor with multilayer color filter |
-
1998
- 1998-12-30 KR KR1019980061083A patent/KR20000044584A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100700264B1 (en) * | 2001-06-28 | 2007-03-26 | 매그나칩 반도체 유한회사 | Method for fabricating color filter of image sensor |
| KR100776145B1 (en) * | 2001-06-30 | 2007-11-15 | 매그나칩 반도체 유한회사 | Image sensor with multilayer color filter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8237237B2 (en) | Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus | |
| US7193289B2 (en) | Damascene copper wiring image sensor | |
| CN101241923B (en) | Image sensor semiconductor device | |
| JP4436326B2 (en) | CMOS image sensor | |
| US7772028B2 (en) | CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom | |
| KR20100037212A (en) | Semiconductor device and fabricating method thereof | |
| CN100495715C (en) | Image sensing device and manufacturing method thereof | |
| TW200810100A (en) | Image sensor and the method for manufacturing the same | |
| US20080096303A1 (en) | Fabrication method of image sensing device | |
| US7365298B2 (en) | Image sensor and method for manufacturing the same | |
| CN106531753A (en) | Image pickup device and method for manufacturing image pickup device | |
| CN102637705A (en) | Semiconductor device manufacturing method | |
| KR20050032448A (en) | Complementary metal oxide semiconductor image sensor and method for fabricating thereof | |
| CN101232032B (en) | Semiconductor device and manufacturing method thereof | |
| US6916680B2 (en) | Method for fabricating image sensor | |
| KR20000044584A (en) | Image sensor having high photo sensitivity | |
| KR20000044581A (en) | Image sensor | |
| KR20000044582A (en) | Image sensor | |
| KR100381016B1 (en) | CMOS image sensor for improved light sensitivity and method for fabricating the same | |
| KR20050059738A (en) | Method for fabricating cmos image sensor | |
| US20240006458A1 (en) | Back side illuminated image sensor device with select dielectric layers on the backside and methods of forming the same | |
| KR100682248B1 (en) | Method for fabricating cmos image sensor | |
| KR20000044586A (en) | Image sensor | |
| KR20090022329A (en) | Method of forming a metal line for an image sensor | |
| KR20010004172A (en) | Image sensor and method for fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Withdrawal due to no request for examination |