KR20000043628A - Wafer chuck - Google Patents

Wafer chuck Download PDF

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Publication number
KR20000043628A
KR20000043628A KR1019980060031A KR19980060031A KR20000043628A KR 20000043628 A KR20000043628 A KR 20000043628A KR 1019980060031 A KR1019980060031 A KR 1019980060031A KR 19980060031 A KR19980060031 A KR 19980060031A KR 20000043628 A KR20000043628 A KR 20000043628A
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KR
South Korea
Prior art keywords
chuck
wafer
frame
framework
light source
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KR1019980060031A
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Korean (ko)
Inventor
유영수
Original Assignee
김영환
현대반도체 주식회사
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Priority to KR1019980060031A priority Critical patent/KR20000043628A/en
Publication of KR20000043628A publication Critical patent/KR20000043628A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: A wafer chuck is provided to flatten a curved surface of a wafer by forming a chuck framework as a floating material. CONSTITUTION: A wafer chuck comprises a chuck framework(31), a multitude of chuck pin(32), a protection layer(34), and a multitude of gas pipe(37). The chuck framework has floating characteristic. The chuck pins are formed on the chuck framework in order to support a wafer. The protection layer surrounds parts of the chuck framework and the chuck pins and provides a lower space and an upper space to a lower portion of the chuck framework and an upper portion of the chuck framework, respectively. The gas pipes installed at the protection layer in order to be connected to the lower space.

Description

웨이퍼척Wafer chuck

본 발명은 웨이퍼척(wafer chuck)에 관한 것으로 특히, 반도체장치의 노광공정에 사용되는 웨이퍼척에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer chuck, and more particularly to a wafer chuck used in an exposure process of a semiconductor device.

웨이퍼척은 반도체장치에 설치되는 것으로, 웨이퍼 상에 직접 실시되는 반도체 제조공정을 안전하게 진행될수 있도록 웨이퍼를 지지하는 기능을 한다. 통상적인 경우, 웨이퍼척은 노광공정에 사용되는 스테퍼(stepper)에 장착되어, 웨이퍼가 광원에 잘 조사될수 있도록 웨이퍼를 지지하는 기능을 하고 있다.The wafer chuck is installed in the semiconductor device and functions to support the wafer so that the semiconductor manufacturing process can be safely performed directly on the wafer. In a typical case, the wafer chuck is mounted on a stepper used in an exposure process, and serves to support the wafer so that the wafer can be irradiated well to the light source.

노광 공정은 포토레지스트가 도포된 웨이퍼 상에 마스크를 올려놓고 광원을 조사하여 마스크의 패턴을 인화하는 공정이다. 이 때 마스크의 패턴이 정확하게 전달되도록 웨이퍼에 명확한 상을 맺게 하는 것이 중요하다. 왜냐하면 노광 공정시 웨이퍼에 전사되는 패턴의 정확도가 디바이스의 수율을 결정하기 때문이다.The exposure step is a step of printing a pattern of a mask by placing a mask on a photoresist-coated wafer and irradiating a light source. At this time, it is important to form a clear image on the wafer so that the pattern of the mask is accurately transferred. This is because the accuracy of the pattern transferred to the wafer during the exposure process determines the yield of the device.

도 1은 종래 기술에 의한 웨이퍼척의 개략적인 단면구조와 노광작업 상태를 를 개략적으로 나타낸 것이다.1 schematically shows a schematic cross-sectional structure and an exposure operation state of a wafer chuck according to the prior art.

웨이퍼척은 웨이퍼 지지대인 척틀(10) 상에 척핀(11)이 다수개 형성되어 있고, 척틀(10)에 다수개의 진공홀(도면미표시)을 구비한다.In the wafer chuck, a plurality of chuck pins 11 are formed on the chuck frame 10, which is a wafer support, and the chuck frame 10 includes a plurality of vacuum holes (not shown).

상기와 같이 구성된 웨이퍼척(10) 상에 실리콘 웨이퍼(19)를 안착시키면, 웨이퍼를 지지하고 있는 웨이퍼척은 진공홀에 연결되어 공기를 흡입하는 진공시스템에 의해 웨이퍼(19)를 홀딩(holding)하게 되고, 척핀(11)은 직접 웨이퍼(19)의 뒷면을 압착함으로써, 웨이퍼(19)를 지지하게 된다.When the silicon wafer 19 is seated on the wafer chuck 10 configured as described above, the wafer chuck supporting the wafer is connected to the vacuum hole to hold the wafer 19 by a vacuum system that sucks air. The chuck pins 11 support the wafer 19 by directly compressing the back surface of the wafer 19.

이 후에 정해진 수순에 의해 노광작업을 진행한다.Thereafter, the exposure operation is performed in a predetermined procedure.

노광작업시에는 LED 광원(15)에서 나오는 탐지광을 웨이퍼(19)에 조사하고 반사되어 나오는 광을 센서(17)가 읽는 방식으로 웨이퍼(19)가 광원의 촛점에 위치하는지를 확인한다. 웨이퍼(19)가 광원의 촛점에 위치하지 않을 경우에는 웨이퍼척을 상하 또는 기울임으로써 웨이퍼(19)를 이동시키는 방식에 의하여 실리콘 웨이퍼가 광원의 촛점 위치하도록 웨이퍼의 위치를 조절한다.In the exposure operation, the detection light emitted from the LED light source 15 is irradiated onto the wafer 19 and the sensor 17 reads the reflected light to check whether the wafer 19 is located at the focal point of the light source. When the wafer 19 is not located at the focus of the light source, the position of the wafer is adjusted so that the silicon wafer is focused at the light source by moving the wafer 19 by tilting the wafer chuck up or down.

미설명 도면부호(13)은 웨이퍼에 조사되는 노광용 광원을 집속시키는 렌즈를 나타낸다.Unexplained reference numeral 13 denotes a lens that focuses an exposure light source irradiated onto the wafer.

실리콘 웨이퍼의 표면에 굴곡이 있는 경우에는 도 2에 보인 바와 같이, 웨이퍼(19)의 표면의 상한치(19a)와 하한치(19b)의 평균지점(19c)에 광원의 촛점위치를 잡아서 설정한다.In the case where the surface of the silicon wafer is curved, as shown in FIG. 2, the focus position of the light source is set at the average point 19c of the upper limit 19a and the lower limit 19b of the surface of the wafer 19.

그러나, 종래의 기술에 따른 웨이퍼척을 사용하는 경우에는 실리콘 기판의 굴곡 표면에 정확한 촛점을 맞출 수 없다는 문제가 있다. 이는 광원의 초점을 실리콘 굴곡된 표면의 평균치에 맞추기 때문이다. 따라서, 반도체 제조 공정에서 표면의 굴곡부위에 광원의 초점이 제대로 맞추어지지 않기 때문에 회로 패턴 형성에 불량이 유발되는 문제점이 있다.However, in the case of using the wafer chuck according to the prior art, there is a problem that it is impossible to accurately focus on the curved surface of the silicon substrate. This is because the light source is focused on the average of the silicon curved surface. Therefore, since the light source is not properly focused on the curved portion of the surface in the semiconductor manufacturing process, there is a problem that a defect occurs in the circuit pattern formation.

본 발명은 종래의 기술의 문제점을 해결하기 위하여 안출된 것으로, 웨이퍼척의 척틀을 유동성 있는 재질로 형성하여 웨이퍼척의 굴곡에 의하여 굴곡진 웨이퍼의 표면을 평탄하게 함으로써, 노광시 웨이퍼의 표면에 광원의 초점을 정확하게 맞출수 있는 웨이퍼척을 제공하고자 한다.The present invention has been made to solve the problems of the prior art, by forming a chuck frame of the wafer chuck made of a flexible material to flatten the surface of the curved wafer by the bending of the wafer chuck, the focus of the light source on the surface of the wafer during exposure We want to provide a wafer chuck that can be precisely matched.

이를 위한 본 발명은 유동적인 특성이 있는 척틀과, 상기 척틀 상에 웨이퍼를 지지할 수 있도록 형성되어 있는 다수개의 척핀과, 상기 척틀 및 상기 척핀의 일부를 둘러싸되, 상기 척틀 상부 및 하부에 각각 분리된 상부공간과 하부공간을 제공하는 보호층과과, 상기 척틀의 하부에 위치하는 하부공간에 연결되도록 상기 보호층에 설치되는 다수개의 가스관을 구비하는 웨이퍼척을 제공한다.To this end, the present invention includes a chuck frame having a fluid characteristic, a plurality of chuck pins formed to support a wafer on the chuck frame, and surrounding the chuck frame and a portion of the chuck pin, respectively separated from the upper and lower chuck frames. It provides a wafer chuck having a protective layer for providing the upper space and the lower space, and a plurality of gas pipes installed in the protective layer to be connected to the lower space located below the chuck frame.

도 1은 종래 기술에 의한 웨이퍼척의 단면 구조1 is a cross-sectional structure of a wafer chuck according to the prior art

도 2는 종래 기술에 의한 웨이퍼척 상에 위치한 웨이퍼의 노광촛점을 설명하기 위한 도면2 is a view for explaining an exposure focus of a wafer located on a wafer chuck according to the prior art;

도 3은 본 발명의 실시예에 따른 웨이퍼척의 단면 구조3 is a cross-sectional structure of a wafer chuck in accordance with an embodiment of the present invention.

도 4a와 도 4b는 본 발명의 실시예에 따른 웨이퍼척 상에 위치한 웨이퍼의 노광촛점을 설명하기 위한 도면4A and 4B illustrate an exposure focus of a wafer located on a wafer chuck according to an embodiment of the present invention.

*도면의 주요한 부호에 대한 간략한 설명** Brief description of the main symbols in the drawings *

31. 척틀. 32. 척핀.31. Chuck frame. 32. Chuck pins.

34. 보호층. 35. 고정핀.34. Protective layer. 35. Push pin.

36. 완충층. 37. 가스관.36. Buffer layer. 37. Gas line.

이하, 하기에서 제시된 본 발명의 실시예와 첨부된 도면을 참조하여 본 발명을 설명하면 다음과 같다.Hereinafter, the present invention will be described with reference to the embodiments of the present invention and the accompanying drawings as described below.

도 3은 본 발명의 실시예에 따른 웨이퍼 척의 단면 구조와 노광작업 상태를 를 개략적으로 나타낸 것이다.Figure 3 schematically shows the cross-sectional structure and the exposure operation state of the wafer chuck according to an embodiment of the present invention.

웨이퍼척은 웨이퍼 지지대인 척틀(31) 상에 척핀(32)이 다수개 형성되어 있고, 척틀(31)에 다수개의 진공핀 홀(도면미표시)이 형성되어 있다. 그리고, 상기 구조의 척틀(31)과 척핀(32)을 별도의 보호층(34)이 둘러싸고 있다. 척틀(31)과 보호층(34)으로 둘러싸인 척틀(31) 상부의 공간에는 완충형 가스가 충진되어 형성된 완충층(36)이 있다. 이 때, 척틀(31)은 유동성이 있는 재질로 얇게 형성됨으로써, 굴곡지는 등의 탄력성이 있는 유동적인 특성을 가지고 있다. 한 편, 보호층(34)에는 웨이퍼척의 척틀(31)의 양단을 고정시키는 고정핀(37)이 설치되어 있다. 그리고, 보호층(39)에는 웨이퍼척의 척틀(31) 하단을 향하여 가스예를 들어, N2혹은, 에어(air)의 이동통로인 다수개의 가스관(37)이 설치되어 있다.In the wafer chuck, a plurality of chuck pins 32 are formed on the chuck frame 31 which is a wafer support, and a plurality of vacuum pin holes (not shown) are formed in the chuck frame 31. In addition, a separate protective layer 34 surrounds the chuck frame 31 and the chuck pin 32 of the structure. In the space above the chuck frame 31 surrounded by the chuck frame 31 and the protective layer 34, there is a buffer layer 36 formed by filling a buffer gas. At this time, the chuck frame 31 is formed of a thin material with a fluid, it has a flexible fluid characteristics such as bending paper. On the other hand, the protection layer 34 is provided with the fixing pin 37 which fixes the both ends of the chuck frame 31 of a wafer chuck. The protective layer 39 is provided with a plurality of gas pipes 37 that are, for example, N 2 or air moving passages toward the lower end of the chuck frame 31 of the wafer chuck.

노광작업을 위하여, 상기와 같이 구성된 웨이퍼척(30)(31) 상에 실리콘 웨이퍼(39)를 안착시키고 노광등의 작업을 진행한다.For the exposure operation, the silicon wafer 39 is seated on the wafer chucks 30 and 31 configured as described above and the operation such as exposure is performed.

상기와 같이 구성된 웨이퍼척(30)(31) 상에 실리콘 웨이퍼(39)를 안착시키면, 웨이퍼를 지지하고 있는 웨이퍼척은 진공홀에 연결되어 공기를 흡입하는 진공시스템에 의해 웨이퍼(39)를 홀딩(holding)하게 되고, 척핀(32)은 직접 웨이퍼(39)의 뒷면을 압착함으로써, 웨이퍼(39)를 지지하게 된다.When the silicon wafer 39 is seated on the wafer chucks 30 and 31 configured as described above, the wafer chuck supporting the wafer is connected to the vacuum hole to hold the wafer 39 by a vacuum system that sucks air. The chuck pins 32 support the wafer 39 by pressing the back side of the wafer 39 directly.

이 후에 정해진 수순에 의해 노광작업을 진행한다.Thereafter, the exposure operation is performed in a predetermined procedure.

노광작업시에는 LED 광원(40)에서 나오는 탐지광을 웨이퍼(39)에 조사하고 반사되어 나오는 광을 센서(41)가 읽는 방식으로 웨이퍼(39)가 광원의 촛점에 위치하는지를 확인한다. 웨이퍼(39)가 광원의 촛점에 위치하지 않을 경우에는 웨이퍼척을 상하 또는 기울임으로써 웨이퍼(39)를 이동시키는 방식에 의하여 실리콘 웨이퍼가 광원의 촛점 위치하도록 웨이퍼의 위치를 조절한다.In the exposure operation, the detection light emitted from the LED light source 40 is irradiated onto the wafer 39 and the sensor 41 reads the reflected light to check whether the wafer 39 is located at the focal point of the light source. When the wafer 39 is not located at the focus of the light source, the position of the wafer is adjusted so that the silicon wafer is focused on the light source by moving the wafer 39 by tilting the wafer chuck up or down.

미설명 도면부호(42)은 웨이퍼에 조사되는 노광용 광원을 집속시키는 렌즈를 나타낸다.Unexplained reference numeral 42 denotes a lens for focusing an exposure light source irradiated onto the wafer.

실리콘 웨이퍼의 표면에 굴곡이 있는 경우에는 도 4a에 보인 바와 같이, 실리콘 웨이퍼의 하부에서 가스의 압력을 증가(▲) 또는 감소(▼)시킴으로써 굴곡진 실리콘 웨이퍼의 표면을 평탄하게 하여 광원의 초점을 맞춘다. 즉, 다수개의 가스관을 통하여 각 위치의 가스관에 가스를 주입 혹은 방출시킴으로써 실리콘 웨이퍼의 표면을 평탄하게 한다. 볼록한 표면이 있는 부분은 압력을 감소(▼)시켜 표면을 잡아당기고, 오목한 표면이 있는 부분은 압력을 증가(▲)시켜 표면을 볼록하게 하여 전체적인 표면을 도 4b에 보인 바와 같이, 적절하게 평탄화시킨다. 이는 웨이퍼척의 척틀(31)을 유동성이 있는 재질로 형성하였기 때문에 가능한데, 가스의 압력을 증가 혹은 감소시킴으로써, 척틀(39)을 잡아당기거나 밀어서 웨이퍼의 표면을 보정하는 것이 가능하다.In the case where the surface of the silicon wafer is curved, as shown in FIG. 4A, by increasing (▲) or decreasing (▼) the gas pressure at the lower portion of the silicon wafer, the surface of the curved silicon wafer is flattened to focus the light source. Fit. That is, the surface of the silicon wafer is made flat by injecting or releasing gas into the gas pipe at each position through the plurality of gas pipes. The part with the convex surface pulls the surface by reducing the pressure (▼), and the part with the concave surface increases the pressure (▲) to make the surface convex, so that the entire surface is appropriately flattened, as shown in FIG. 4B. . This is possible because the chuck 31 of the wafer chuck is formed of a flowable material. By increasing or decreasing the pressure of the gas, it is possible to correct the surface of the wafer by pulling or pushing the chuck 39.

이 때, 실리콘 웨이퍼의 표면은 별도의 장치에 의하여 그 평탄화정도를 측정한다.At this time, the surface of the silicon wafer is measured for its leveling degree by a separate device.

상기 평탄화된 실리콘 표면을 만드는 과정은 노광 작업시, 노광의 촛점을 맞추는 것이 유리하며, 광원의 촛점에 정확히 실리콘 기판을 위치시킬 수 있다. 따라서, 촛점 불량을 방지하여 실리콘 기판 내에 회로 패턴을 형성할 시 일정한 크기의 유지가 가능하다.The process of making the planarized silicon surface advantageously focuses the exposure during the exposure operation, and can place the silicon substrate exactly at the focus of the light source. Therefore, it is possible to maintain a constant size when forming a circuit pattern in the silicon substrate by preventing the focus failure.

본 발명은 실리콘 웨이퍼의 표면에 광원의 초점을 정확하게 맞추는 것이 가능하며, 그 결과로 광원의 초점불량을 방지하여 실리콘 기판 내에 회로 형성시 일정한 크기의 유지가 가능하다.According to the present invention, it is possible to accurately focus a light source on a surface of a silicon wafer, and as a result, it is possible to maintain a constant size when forming a circuit in a silicon substrate by preventing a poor focus of the light source.

본 발명은 제시된 실시예 뿐만이 아니라, 첨부된 특허청구범위 및 언급한 상술부분을 통하여 다양한 실시예로 구현될 수 있으며, 동업자에 의하여 다양한 방식으로 적용될 수 있다.The present invention can be implemented in various embodiments through the appended claims and the above-mentioned parts as well as the presented embodiments, and can be applied in various ways by its partners.

Claims (3)

유동적인 특성이 있는 척틀과,Chuck frame with fluid characteristics, 상기 척틀 상에 웨이퍼를 지지할 수 있도록 형성되어 있는 다수개의 척핀과,A plurality of chuck pins formed to support the wafer on the chuck frame, 상기 척틀 및 상기 척핀의 일부를 둘러싸되, 상기 척틀 상부 및 하부에 각각 분리된 상부공간과 하부공간을 제공하는 보호층과과,A protective layer surrounding a portion of the chuck frame and the chuck pin and providing upper and lower spaces respectively separated from upper and lower portions of the chuck frame; 상기 척틀의 하부에 위치하는 하부공간에 연결되도록 상기 보호층에 설치되는 다수개의 가스관을 구비하는 웨이퍼척을 제공한다.Provided is a wafer chuck having a plurality of gas pipes installed in the protective layer to be connected to a lower space located below the chuck frame. 청구항 1에 있어서,The method according to claim 1, 상기 척틀의 상부에 위치하는 상부공간이 완충형 가스로 충진되어 있는 상기 척틀의 유동을 완만하게 해주는 웨이퍼척.The wafer chuck to smooth the flow of the chuck frame is filled with a buffer gas is the upper space located on the upper portion of the chuck frame. 청구항 1에 있어서,The method according to claim 1, 상기 보호층에 상기 척틀의 양단을 고정시키는 고정핀을 더 추가하는 웨이퍼척.Wafer chuck further comprising a fixing pin for fixing both ends of the chuck frame to the protective layer.
KR1019980060031A 1998-12-29 1998-12-29 Wafer chuck KR20000043628A (en)

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KR1019980060031A KR20000043628A (en) 1998-12-29 1998-12-29 Wafer chuck

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100819369B1 (en) * 2001-12-31 2008-04-04 엘지.필립스 엘시디 주식회사 A chuck for exposure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100819369B1 (en) * 2001-12-31 2008-04-04 엘지.필립스 엘시디 주식회사 A chuck for exposure

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