KR20000032502A - Apparatus for drying wafer using evaporated water - Google Patents

Apparatus for drying wafer using evaporated water Download PDF

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Publication number
KR20000032502A
KR20000032502A KR1019980048969A KR19980048969A KR20000032502A KR 20000032502 A KR20000032502 A KR 20000032502A KR 1019980048969 A KR1019980048969 A KR 1019980048969A KR 19980048969 A KR19980048969 A KR 19980048969A KR 20000032502 A KR20000032502 A KR 20000032502A
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South Korea
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water
wafer
drying apparatus
wafer drying
function
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KR1019980048969A
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Korean (ko)
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남성호
오규근
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남성호
울파기술 주식회사
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Priority to KR1019980048969A priority Critical patent/KR20000032502A/en
Publication of KR20000032502A publication Critical patent/KR20000032502A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE: An apparatus for drying wafers using evaporated water(water with gases such as oxygen, nitrogen extracted) is provided to make a wafer drier safer without using dangerous articles. CONSTITUTION: An apparatus for drying wafers using evaporated water includes an evaporator(37), a heater(36), a manipulator(39), a circulator(34), and a depressor(38). The apparatus according to present invention has no mechanical circulation. Evaporated water(water with gases such as oxygen, nitrogen perfectly extracted) but any alcohol(IPA) is used for the apparatus. Water is evaporated in the evaporator and heated in the heater. The temperature of the heated water is controlled and is supplied to the manipulator. The supplied water circulates by the circulator, and the manipulator drains the circulating water.

Description

탈기수를 이용한 웨이퍼 건조장치Wafer Drying Equipment Using Degassed Water

본 발명은 반도체 제조 전공정(前工程)에 있어서의 웨이퍼의 세정후 웨이퍼 표면에 남아 있는 물방울의 건조에 관한 것으로, 특히 물(탈기수)만을 이용한 건조장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to drying of water droplets remaining on the surface of a wafer after cleaning the wafer in a semiconductor manufacturing preprocess, and more particularly, to a drying apparatus using only water (degassed water).

반도체 제조공정에 있어서의 웨이퍼의 세정은 가장 필수적인 공정중의 하나이며, 또한 가공선폭(DESIGN RULE)의 미세화에 따라 그 중요성은 더욱 증대되고 있다. 그 중요성이 증대되는 이유는 세정 과정이나 세정후의 건조과정에서 1차적인 오염의 제거 및 2차적인 오염을 방지하고 초청정(超淸淨)의 웨이퍼 표면을 유지하는 것이 전체 공정의 수율에 미치는 영향이 크기 때문이다. 최근의 반도체 제조 공정에서 관리하는 먼지입자나, 오염물(PARTICLE)의 크기는 0.1㎛ 이상의 것으로써, 미세한 물입자의 건조 흔적도 가공소자의 특성의 열화(劣化)등을 유발 시킬 수 있기 때문에 공정에는 악영향을 미칠 수 있다.Cleaning of wafers in the semiconductor manufacturing process is one of the most essential processes, and its importance is further increased with the miniaturization of DESIGN RULE. The importance is increased because the removal of primary contamination and the prevention of secondary contamination and the maintenance of ultra-clean wafer surface in the cleaning process or drying process after cleaning will affect the yield of the whole process. Because of this size. Since the size of dust particles and contaminants (PARTICLE) managed in the recent semiconductor manufacturing process is 0.1 μm or more, traces of drying of fine water particles can also cause deterioration of characteristics of the processing element. May adversely affect

세정과 건조 공정은 일반적으로 하나의 시스템으로 구성되어 전단의 세정을 거쳐 지나온 웨이퍼를 건조장치에 넣어 건조하는 방식으로 이루어진다. 이때 건조 장치의 웨이퍼 표면의 물입자 건조시에 요구되는 사항으로써는 장치 자체에서 발생할 수 있는 2차적인 오염의 방지, 워터막(WATER MARK)이라고 부르는 건조 흔적의 발생방지, 자연산화막의 제어 및 성장 방지등이 있다.The cleaning and drying process is generally composed of a single system, in which wafers passed through the front end of cleaning are put into a drying apparatus and dried. At this time, what is required to dry the water particles on the wafer surface of the drying apparatus is to prevent secondary contamination that may occur in the apparatus itself, to prevent the occurrence of drying traces called WATER MARK, and to control and grow the natural oxide film. There is prevention.

현재 많이 이용되고 있는 건조 방식은 크게 두가지로써 기계적인 회전에 의한 원심력을 이용한 회전건조방식(SPIN DRY SYSTEM)과 알콜(ISOPROFILALCHOL)증기 건조방식이 있다.Currently, there are two types of drying methods that are widely used, spin drying system using centrifugal force by mechanical rotation, and alcohol drying method (ISOPROFILALCHOL).

회전건조방식은 웨이퍼를 고속으로 회전시켜 표면의 물방울 들이 원심력에 의해 떨어져 나가도록 하는 방식으로써 초기에 많이 이용한 방식이다. 이 방식은 도면1에 나타낸 것과 같이 회전축을 수직으로 하고 회전면을 수평으로하여 웨이퍼가 들어있는 카세트를 크래들(CRADLE)에 넣고 고속으로 회전시켜 건조하는 구조이다.The rotary drying method is a method used in the early stages by rotating the wafer at a high speed so that water droplets on the surface are separated by centrifugal force. As shown in Fig. 1, the rotating shaft is vertical and the rotating surface is horizontal, and the cassette containing the wafer is placed in the cradle and rotated at high speed to dry.

이 방식의 문제점으로써는 장치 자체의 회전부로 부터의 발진(發塵), 웨이퍼와 그 보지부(保持部)(웨이퍼 카세트의 SLIT)의 진동에 의한 발진(發塵), 떨어져 나간 물방울 입자가 벽면에 부딛친후 웨이퍼에 재부착, 고속회전에 의해 웨이퍼와 카세트에 정전기 발생 -오염물의 부착 유발 및 웨이퍼상의 가공회로 파괴, 워터막(WATER MARK)의 발생 등이 있으며, 초고집적 반도체의 가공 정도(精度)의 미세화(微細化)나, 웨이퍼의 대구경화(大口徑化)에 대응하기 어려운 점이있다.Problems with this system include oscillation from the rotating part of the device itself, oscillation due to vibration of the wafer and its retaining part (SLIT of the wafer cassette), and water droplets that fall off. After attaching to the wafer and reattaching it to the wafer and generating static electricity on the wafer and cassette by high-speed rotation, it causes the adhesion of contaminants, breaks down the processing circuit on the wafer, and generates the water mark. ), It is difficult to cope with miniaturization of the wafer and large diameter of the wafer.

알콜(ISOPROFIL ALCHOL)증기건조방식은 도면2에 나타낸 것처럼 알콜을 가열 증발시켜 웨이퍼 표면의 물입자와 반응시키는 방식으로써 20dyn/cm 정도의 낮은 표면장력과 물에 대한 무한의 상용성(相溶性)을 가진 알콜의 불점포화증기(佛点飽和蒸氣)에 의해 웨이퍼 표면의 물을 응축 치환하여 건조시키는 방식이다. 이 방식은 장치자체로 부터의 발진(發塵)이 없고 웨이퍼가 거의 움직이지 않기 때문에 진동에 의한 발진(發塵)이 없다. 또한, 정전기의 문제도 없으나, 알콜의 순도저하에 의한 건조성능 저하, 알콜이라는 위험약품을 사용함에 따르는 안전의 문제, 고가의 운용비용, 워터막(WATER MARK)의 발생우려, 웨이퍼 표면에의 알콜 유기물의 잔류가 초고집적화에 대응하기 어려운 문제점이 있다.As shown in Fig. 2, the alcohol (ISOPROFIL ALCHOL) steam drying method heats and evaporates alcohol to react with water particles on the wafer surface, and has a low surface tension of about 20 dyn / cm and infinite compatibility with water. It is a system in which water on the wafer surface is condensed and replaced by an unsaturated vapor of an excited alcohol. In this system, there is no oscillation from the device itself, and there is no oscillation due to vibration because the wafer hardly moves. In addition, there is no problem of static electricity, but there is a problem of deterioration of drying performance due to deterioration of alcohol purity, safety problem of using dangerous chemicals such as alcohol, expensive operation cost, water film (WATER MARK), and alcohol on the wafer surface. There is a problem that the residue of organic matter is difficult to cope with ultra-high integration.

본발명은 이러한 종래의 문제점을 해결하는 것으로, 우수한 건조성능과 위험물을 사용하지 않은 안전한 웨이퍼 건조장치를 제공하는 것을 목적으로 한다.The present invention is to solve such a conventional problem, it is an object of the present invention to provide a safe wafer drying apparatus that does not use excellent drying performance and dangerous goods.

본 발명의 또다른 목적은 반도체 제조공정의 세정공정중 웨이퍼를 건조시키기 전에 순수에 넣어 일정시간 세정(RINSE)하는 최종수세조(FINAL RINSE)조를 함께 구성하여 외부의 산소와의 접촉을 근본적으로 차단하므로 산화막 형성을 방지 할 수 있다.It is still another object of the present invention to form a final RINSE bath in which pure water is placed in pure water prior to drying the wafer during the cleaning process of a semiconductor manufacturing process, thereby fundamentally blocking contact with external oxygen. Therefore, oxide film formation can be prevented.

본 발명의 또다른 목적은 세정중 산화하기 쉬운 정밀부품의 세정기를 제공한다.It is still another object of the present invention to provide a precision part scrubber that is easy to oxidize during cleaning.

이러한 목적을 달성하기 위한 본 발명의 원리에 따르면, 처리수의 용존 산소를 제거하기 위한 탈기부, 물입자가 묻어있는 처리 대상 웨이퍼를 침수시켜 웨이퍼 표면의 산소를 함유하고 있는 물입자를 희석 및 배출 시키기 위한 처리수를 저장 및 배출(OVER FLOW)하고 있는 처리조, 처리조로부터 웨이퍼를 규정된 속도로 끌어 올리기 위한 상하 이동부, 끌어 올려지는 웨이퍼 표면의 물입자를 신속하게 증발 시키기 위한 가열 온조기능을 가진 증발부가 있는 장치가 제공된다.According to the principle of the present invention for achieving the above object, the degassing part for removing the dissolved oxygen of the treated water, the water to be treated the wafer to be immersed in the processing target is diluted and discharged water particles containing oxygen on the wafer surface Treatment tank that stores and discharges the treated water to make it flow, up and down moving part to lift the wafer out of the processing tank at the prescribed speed, and heating temperature function to rapidly evaporate water particles on the surface of the wafer being raised. An apparatus having an evaporation unit having a is provided.

본 발명의 또 다른 원리에 따르면, 처리수의 온도를 제어하여 증발성능을 향상시키기 위한 처리수 온도 제어부와 처리수의 온도 제어를 위한 순환계가 제공된다.According to another principle of the present invention, there is provided a treatment water temperature control unit for controlling the temperature of the treatment water to improve the evaporation performance and a circulation system for temperature control of the treatment water.

본 발명의 또 다른 원리에 따르면, 증발부 내의 증발 속도 향상과 무산소 분위기 유지를 위하여 압력을 조절하기 위한 진공 발생부와 질소(N2)의 공급 및 분사 노즐부가 제공된다.According to another principle of the present invention, there is provided a vacuum generating unit and a supply and injection nozzle unit of nitrogen (N2) for adjusting the pressure in order to improve the evaporation rate in the evaporation unit and maintain an oxygen-free atmosphere.

기타 본 발명의 목적, 특징 및 장점들은 도면을 참조한 이하의 상세한 설명으로부터 보다 명확해 질 것이다.Other objects, features and advantages of the present invention will become more apparent from the following detailed description with reference to the drawings.

제4도는 본 발명에 따른 탈기수를 이용한 웨이퍼 건조장치의 전체 구성 블럭도이다.4 is a block diagram showing the overall configuration of a wafer drying apparatus using degassed water according to the present invention.

제4도를 참조하면, 본 발명에 따른 건조장치는 기계적인 회전 구동부가 없기 때문에 장치 자체로 부터의 발진(發塵)이 없으며, 위험성이 있는 약품을 사용하지 않고 순수(純水)만을 사용하므로써 안전하고, 또한 건조에 사용된 순수를 다시 최종수세조(Final rinse bath)에 재사용 됨으로 저가의 운영비로 가동 할 수 있는 특징이 있다.Referring to FIG. 4, the drying apparatus according to the present invention has no mechanical rotational drive, so there is no oscillation from the apparatus itself, and only by using pure water without using dangerous chemicals. It is safe and can be operated at low operating cost by reusing pure water used for drying in final rinse bath.

제5도는 웨이퍼 표면의 물입자가 증발시에 발생하는 워터막(WATER MARK)의 생성 과정을 나타낸 도면이다. 제4(a)도를 참조하면 워터막은 Si, H2O, O2의 3요소가 모일때 생성된다. 제4(b)도에서 공기중의 O2가 수분에 용해되어 들어가며 물방울과 웨이퍼(Si)의 경계면으로 확산, 웨이퍼 표면에 국소적(局所的)으로 산화물(자연산화막)인 SiO2가 형성되고, 제4(c)도에서 SiO2와 H2O 가 반응하여 H2SiO3가 생성, H2SiO3가 수분중에 녹아든다.5 is a view illustrating a process of generating a water mark generated when water particles on a wafer surface evaporate. Referring to FIG. 4 (a), a water film is generated when three elements of Si, H 2 O, and O 2 are collected. In FIG. 4 (b), O 2 in the air dissolves in water and diffuses into the interface between water droplets and the wafer Si, and SiO 2 is formed locally on the wafer surface as an oxide (natural oxide film). In Fig. 4 (c), SiO 2 and H 2 O react to form H 2 SiO 3 , and H 2 SiO 3 dissolves in water.

제4(d)도에서 수분이 모두 증발하고 나면 H2SiO3가 남게되며, 이 남게된 H2SiO3가 워터막(WATER MARK)이다.In FIG. 4 (d), after all of the moisture has evaporated, H 2 SiO 3 remains, and the remaining H 2 SiO 3 is a water film.

상기의 워터막(WATER MARK)의 생성을 방지하기 위한 본 발명에 따르면 용존산소를 제거한(1 ppb이하) 초순수를 처리수로 사용하여 이 처리수를 가열 및 온도 제어하여 웨이퍼를 침수 시키므로써 웨이퍼 표면의 산소를 함유한 물입자의 희석을 촉진하여 배출하므로 자연 산화막의 발생을 방지 할 수 있다. 또한, 웨이퍼를 천천히 끌어올려 처리수 표면과 웨이퍼 사이에 안정된 계면을 형성하고 표면을 램프히터등으로 집속 가열하여 웨이퍼가 침수면 밖으로 나오는 순간 물입자가 신속히 증발, 건조되도록 하며, 이때 증발시의 분위기를 가온, 감압 및 질소(N2)를 공급 하므로써 무산소 분위기를 형성하여 물과 산소의 결합에 기인하는, 건조시에 발생하는 워터막(WATER MARK)의 생성을 방지 할 수 있다.According to the present invention for preventing the formation of the above water film (WATER MARK), using ultra-pure water from which dissolved oxygen has been removed (1 ppb or less) as treated water, the treated water is heated and temperature controlled to submerge the wafer to thereby infiltrate the wafer surface. By accelerating the dilution of water particles containing oxygen, it is possible to prevent the occurrence of natural oxide film. In addition, the wafer is slowly pulled up to form a stable interface between the surface of the treated water and the wafer, and the surface is focused and heated with a lamp heater to quickly evaporate and dry water particles as soon as the wafer leaves the submerged surface. By heating, depressurizing, and supplying nitrogen (N2), an oxygen-free atmosphere can be formed to prevent the formation of a water mark generated during drying due to the combination of water and oxygen.

이때, 처리수를 가열하므로써 발생하는 수증기는 처리수의 표면에서 위로 상승하지 않고 측면으로 배출되도록 하는 구조를 가진다.At this time, the steam generated by heating the treated water has a structure that is discharged to the side without rising upward from the surface of the treated water.

상기의 식별자가 없습니다.No identifier above

제1도는 웨이퍼 세정장치의 구성도1 is a block diagram of a wafer cleaning apparatus

제2도는 종래의 웨이퍼 건조 장치중 회전건조방식 장치의 구성도2 is a block diagram of a rotary drying method of the conventional wafer drying apparatus

제3도는 종래의 웨이퍼 건조 장치중 IPA증기 건조 장치의 구성도3 is a block diagram of a conventional IPA steam drying apparatus of the wafer drying apparatus

제4도는 본발명에 의한 탈기수 건조장치의 구성을 나타낸 블럭도Figure 4 is a block diagram showing the configuration of the degassing water drying apparatus according to the present invention

제5도는 웨이퍼 표면에서의 물방울에 의한 건조흔적(WATER MARK)의 생성과정을 나타낸 개념도.5 is a conceptual diagram illustrating a process of generating a dry mark by water droplets on a wafer surface.

도면의 주요 부분에 대한 부호의 설명Explanation of symbols for the main parts of the drawings

1:회전챔버(SPIN CHAMBER) 21:필터(HEPA FILTER) 31:입출구1: SPIN CHAMBER 21: HEPA FILTER 31: Inlet and outlet

2:회전건조기커버 22:건조챔버(IPA CHAMBER) 32:가열및증발부2: rotary dryer cover 22: drying chamber (IPA CHAMBER) 32: heating and evaporation

3:필터(HEPA FILTER) 23:램프히터 33:웨이퍼3: HEPA FILTER 23: Lamp heater 33: Wafer

4:크래들 24:웨이퍼 34:순환기4: cradle 24: wafer 34: circulator

5:웨이퍼 25:질소 공급구 35:진공펌프5: Wafer 25: Nitrogen supply port 35: Vacuum pump

6:턴테이블 26:알콜(IPA)공급구 36:순환가온부6: Turntable 26: Alcohol (IPA) supply port 36: Circulating heating part

7:회전축 27:알콜(IPA),순수배수구 37:탈기모듈7: rotating shaft 27: alcohol (IPA), pure drainage 37: degassing module

8:배기구 28:배기구 38:감압펌프8: Exhaust vent 28: Exhaust vent 38: Pressure reducing pump

29:냉각배관 39:처리조29: cooling piping 39: treatment tank

40:감압챔버40: pressure reduction chamber

41:필터41: Filter

상기의 식별자가 없습니다.No identifier above

상기의 식별자가 없습니다.No identifier above

Claims (4)

탈기수 웨이퍼 건조장치에 있어서Degassing Wafer Drying Equipment 기계적인 회전이 없으며, 알콜(IPA)를 사용하지 않고, 탈기된 초순수를 사용하는 웨이퍼 건조장치.Wafer drying apparatus without mechanical rotation, without using alcohol (IPA), using deaerated ultrapure water. 상기 웨이퍼 건조장치에 있어서 초순수 탈기기능(37)을 포함하고 탈기된 초순수를 가열(36), 온도제어하여 처리조(39)에 공급하며, 이 처리수의 순환기능(34)을 가지는 웨이퍼 건조장치.The wafer drying apparatus includes an ultrapure water degassing function 37 and supplies the deaerated ultrapure water to the treatment tank 39 by heating 36 and temperature control, and has a circulating function 34 of the treated water. . 상기 처리조(39)에 있어서 처리수에서 증발하는 수증기의 배출기능; 내부를 무산소 분위기로 하기위한 감압(38) 및 질소(N2)공급기능; 증발을 촉진하기 위한 분위기의 가열(32), 온도제어기능을 가지는 웨이퍼 건조장치.Discharge function of water vapor evaporated from the treated water in the treatment tank (39); A reduced pressure 38 and nitrogen (N 2) supply function to make the interior an oxygen-free atmosphere; A wafer drying apparatus having a heating (32) and a temperature control function in an atmosphere for promoting evaporation. 상기 처리조(39)에 있어서 처리수의 순도 감시기능; 처리수 교체기능을 가지는 웨이퍼 건조장치.A purity monitoring function of the treated water in the treatment tank 39; Wafer drying apparatus with treatment water replacement function. 상기 탈기수 웨이퍼 건조장치에 있어서In the degassed wafer drying apparatus 웨이퍼 세정장치(WET STATION)의 최종수세공정(FINAL RINSE)을 병행하여 처리하며 최종수세공정 종료후 동일한 처리조 내에서 곧바로 탈기수 건조공정을 진행 할 수 있는 탈기수 웨이퍼 건조장치.Degassing wafer drying equipment that processes the final washing process of the wafer station (WET STATION) in parallel and can carry out the dehydration drying process in the same treatment tank immediately after the final washing process. 상기 탈기수 웨이퍼 건조장치에 있어서In the degassed wafer drying apparatus 로더(LOADER), 언로더(UNLOADER)를 포함한 독립형 웨이퍼 건조장치.Standalone wafer drying system including loader and unloader. 상기 탈기수 웨이퍼 건조장치의 원리를 이용한 액정(LCD) 판넬 건조장치.Liquid crystal (LCD) panel drying apparatus using the principle of the degassed wafer drying apparatus.
KR1019980048969A 1998-11-14 1998-11-14 Apparatus for drying wafer using evaporated water KR20000032502A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030087204A (en) * 2002-05-07 2003-11-14 김경진 Wafer dryer and method of drying wafer
KR100427008B1 (en) * 2001-02-21 2004-04-13 에이펫(주) Apparatus for treating a substrate
KR100454241B1 (en) * 2001-12-28 2004-10-26 한국디엔에스 주식회사 wafer drying apparatus
KR100464853B1 (en) * 2002-06-20 2005-01-06 삼성전자주식회사 Method and apparatus for drying wafer by instant decompressing and heating

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100427008B1 (en) * 2001-02-21 2004-04-13 에이펫(주) Apparatus for treating a substrate
KR100454241B1 (en) * 2001-12-28 2004-10-26 한국디엔에스 주식회사 wafer drying apparatus
KR20030087204A (en) * 2002-05-07 2003-11-14 김경진 Wafer dryer and method of drying wafer
KR100464853B1 (en) * 2002-06-20 2005-01-06 삼성전자주식회사 Method and apparatus for drying wafer by instant decompressing and heating

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