KR20000032274A - Crosstalk measuring circuit - Google Patents

Abstract

PURPOSE: A crosstalk measuring circuit is provided to measure a crosstalk without a noise by measuring a drain current and voltage from each of a first and a second metal of a crosstalk portion in order to remove noise elements. CONSTITUTION: A crosstalk measuring circuit comprises a pulse generation portion, a crosstalk generation portion(22), a crosstalk reference portion, and a crosstalk measuring portion. The pulse generation portion generates a constant pulse signal. The crosstalk generation portion comprises a first metal line and a second metal line. The first metal line receives the pulse signal from the pulse generation portion and generates a crosstalk to the second metal line. The crosstalk reference portion detects a current and a voltage of the first metal line and outputs the detected value as a reference value. The crosstalk measuring portion detects a current and a voltage of the second metal line generates and outputs the detected value.

Description

Cross Torque Measurement Circuit

The present invention relates to a crosstalk measurement circuit, and more particularly, to a crosstalk measurement circuit for measuring crosstalk using a change in the current or voltage of a MOSFET to generate a frequency in a chip and to facilitate measurement. It is about.

In general, crosstalk refers to a phenomenon in which signal current leaks from one line to another due to coupling capacitance between signal lines between adjacent signal lines.

In recent years, with the development of semiconductor technology, the area occupied by the wiring lines and the average length of the wiring lines in the semiconductor chip are continuously increasing, high density wiring is causing unexpected signal problems and circuits and systems in the future technology. Difficulties in meeting design goals. As such, the matter that cannot be ignored due to the densification of wiring is a crosstalk phenomenon, so a deep study on the crosstalk phenomenon is essential.

Therefore, in order to solve the problem caused by the crosstalk, it must be started by measuring the crosstalk.

Referring to the conventional cross-talk measurement circuit with reference to the accompanying drawings as follows.

1 is a configuration diagram of a conventional crosstalk measurement circuit.

The conventional crosstalk measuring circuit includes an input pad 1 for applying a pulse signal from the outside, a crosstalk generating circuit 2 for generating crosstalk by an external pulse signal input through the input pad 1, and And an output pad 3 for measuring the crosstalk generated by the crosstalk generating circuit 2.

Here, the crosstalk generating circuit 2 is connected to three wiring lines 4, 5, 6 arranged at regular intervals in one direction, and both ends of the three wiring lines 4, 5, 6, respectively. It consists of a plurality of buffers (7, 8, 9, 10, 11, 12), and three capacitors (13, 14, 15) connected between each buffer (10, 11, 12) on one side and the ground terminal. . At this time, the input pad 1 is connected to the input buffers 7 and 9 of the two wiring lines 4 and 6 on the outside of the three wiring lines 4, 5 and 6. At the end of 5), the output pad 3 is connected.

Here, the reference numeral is the power pad 16.

The operation of the conventional crosstalk measurement circuit configured as described above is as follows.

A pulse having a desired frequency from the outside is supplied to the crosstalk generating circuit 2 through the input pad 1. Then, crosstalk is generated in the crosstalk generating circuit 2. That is, although the external two pulses are not applied to the two outer wiring lines 4 and 6 and the external pulses are not applied to the center wiring line 5, the voltage (or Current) is induced. Therefore, the crosstalk voltage induced in the output pad 3 connected to the center wiring line 5 is measured by using an E-beam prober or a pico-prober.

However, the conventional crosstalk measurement circuit as described above has the following problems.

That is, since the crosstalk voltage induced by the crosstalk is weak in power, when the prober is brought into contact with the output pad to measure the crosstalk voltage, the voltage induced by the loading effect decreases to obtain an accurate crosstalk voltage. Difficult to measure

The present invention has been made to solve the above problems, crosstalk measurement to generate a pulse having a desired voltage and frequency inside the chip and to measure the induced crosstalk voltage using the current or voltage of the MOSFET The purpose is to provide a circuit.

1 is a block diagram of a conventional crosstalk measurement circuit

2 is a block diagram of a crosstalk measurement circuit according to an embodiment of the present invention.

3 is a circuit diagram of a pulse generator according to the present invention's crosstalk measurement circuit.

4 is a detailed block diagram of a crosstalk measurement circuit according to an embodiment of the present invention.

Explanation of symbols for the main parts of the drawings

21: pulse generator 21a, 21b: inverter

22: crosstalk generating section 22a, 22b: metal line

23: crosstalk measurement unit 24: crosstalk reference unit

Crosstalk measurement circuit of the present invention for achieving the above object is provided with a pulse generator for generating a constant pulse signal is installed inside the chip, and the first metal line and the second metal line and the first metal line A crosstalk generator for inputting a pulse signal output from the pulse generator to generate crosstalk to a second metal line, and a crosstalk reference unit for detecting and outputting a current voltage of the first metal line of the crosstalk generator to a reference value And a crosstalk measuring unit for detecting and outputting a current voltage of the second metal line of the crosstalk generating unit.

Referring to the cross-talk measuring circuit of the present invention as described above in more detail with reference to the accompanying drawings as follows.

2 is a block diagram of a crosstalk measurement circuit of the present invention, FIG. 3 is a block diagram of a pulse generator of the present invention, and FIG. 4 is a diagram of a crosstalk reference section 22 and a crosstalk measurement section.

The cross-talk measuring circuit of the present invention is installed in the chip and is output from the pulse generator 21 and the pulse generator 21 for generating a pulse in which the rise time and the fall time are adjusted by an external control signal The pulse generator includes a first metal line 22a to which a pulse signal is applied at one end and a second metal line 22b to be parallel to the first metal line 22a and to be supplied with a constant voltage at one end. A crosstalk generating unit 22 for generating crosstalk by inputting a pulse signal output from the second signal 21; and a first MOSFET (MOSFET1) at the other end of the first metal line 22a of the crosstalk generating unit 22; A gate connected to the crosstalk reference unit 24 for measuring the current and voltage of the source / drain of the first MOSFET MOSFET1 and outputting the crosstalk reference value, and a second metal line of the crosstalk generator 22. Output from other end of Is configured to include the cross-talk measurement unit 23 which measures, using the change in the current and voltage of the cross-talk voltage MOSFET 2 wp (MOSFET2).

Here, the configuration of the pulse generator 21 is as shown in FIG.

The pulse generator 21 includes a plurality of inverters 21a connected in series to invert and output a padback signal, and a plurality of inverters in series. It consists of the 2nd inverter part 21b which inverts and outputs the signal output from the 1st inverter part 21a.

The operation of the crosstalk measurement circuit of the present invention configured as described above is as follows.

First, the pulse generator 21 applies a pulse signal having a predetermined frequency to the first metal line 22a of the crosstalk generator 22.

The crosstalk generator 22 generates a crosstalk voltage on the second metal line 22b by a pulse applied to the first metal line 22a as in the related art.

At this time, the source / drain current and voltage of the first MOSFET (MOSFET1) of the crosstalk reference unit 24 connected to the first metal line 22a are measured to be a reference value.

In addition, the source / drain current and voltage values of the second MOSFET (MOSFET2) of the crosstalk measurement unit 23 connected to the second metal line 22b are measured.

The influence of the crosstalk is evaluated by comparing the measured reference value and the measured value.

As described above, the crosstalk measurement circuit of the present invention has the following effects.

The crosstalk measuring circuit of the present invention detects the drain current and the voltage at each of the first metal line where the pulse signal of the crosstalk generating unit is applied and the second metal line where the crosstalk is induced to measure crosstalk, thereby removing noise components. Crosstalk can be measured and crosstalk measurement is easy.

Claims (3)

A pulse generator installed inside the chip to generate a constant pulse signal; A crosstalk generator having a first metal line and a second metal line and generating a crosstalk to a second metal line by inputting a pulse signal output from the pulse generator to the first metal line; A crosstalk reference unit configured to detect a current voltage of the first metal line of the crosstalk generator and output the reference voltage as a reference value; And a crosstalk measuring unit configured to detect and output a current voltage of the second metal line of the crosstalk generating unit. The method of claim 1, And the crosstalk reference unit includes a first MOSFET having a gate connected to the first metal line to detect the drain current and the voltage of the first MOSFET. The method of claim 1, And the crosstalk measuring unit includes a second MOSFET having a gate connected to a second metal line to detect the drain current and the voltage of the second MOSFET.