KR20000027441A - Plasma generator having grounding electrode with multiple permittivity - Google Patents

Abstract

PURPOSE: A plasma generator improving uniformity of a plasma state is provided by using a grounding electrode having multiple perceptivity. CONSTITUTION: A grounding electrode(20) of a plasma generator consists of three parts(A,B,C)having different permissiveness. The perceptivity of each parts is A>B>C so that the plasma is not concentrated on a specific portion. Each grounding paths are altered until the state of the plasma is uniform.

Description

Appartus for occuring plasma having ground pad of multi heritability

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus, and more particularly, to a plasma generating apparatus for generating an atmosphere of activated ions by applying high frequency power to reactive gases.

The semiconductor device is a diffusion process for growing an oxide film on a silicon substrate, depositing impurities, penetrating the deposited impurities into a silicon wafer to a desired depth, and selectively removing a mask or a reticle (eg, a protective portion of a portion to be etched or implanted). Photo process to create patterns of reticle on wafer, etching process to selectively remove deposited or deposited thin films grown under photoresist after photoresist development by using gas or chemicals, and chemical vapor deposition (CVD) It is manufactured by taking several unit processes such as thin film process to form a specific film by using deposition, ion implantation or metal deposition method.

Recently, according to the trend of high integration of semiconductor devices, new manufacturing technologies are being developed to obtain products of excellent quality and to improve productivity. Photographic techniques using shorter wavelengths for higher resolution, shallow junctions and fine gate circuitry for faster speeds, and chemical vapors rather than high temperature heat to reduce the thermal problems that can be generated by using fine gate technology. An example is thin film formation using a deposition method.

Plasma is used in this trend. In the reaction chamber used for the manufacture of a semiconductor device, a device capable of generating plasma is installed so that a chemical reaction occurs better. Since a lot of work is performed by chemical reaction with gas in the manufacturing process of a semiconductor device, using plasma is widely used in unit processes, such as thin film formation and etching.

1 is a schematic configuration diagram of a general plasma etching apparatus.

Referring to FIG. 1, a general plasma etching apparatus 10 may include a reaction chamber 11 capable of sealing a gas, a high frequency supply electrode 12 for applying high frequency power into the reaction chamber, and a ground path for plasma. The ground electrode 13 etc. are provided. When a high frequency power of 13.56 MHz is supplied through the high frequency supply electrode 12, the gas inside the reaction chamber 11 undergoes ionization decomposition with gas molecules to generate activated ions and radicals to become a plasma state. Radicals in the reaction particles are accelerated by diffusion and ions are accelerated by the electric field. The radicals have momentum in a disordered direction and the ions move in a constant direction along the direction of the electric field. The surface of the wafer 14 and the radical react chemically to cause etching.

However, as the semiconductor manufacturing apparatus using plasma is generated by using the plasma generating apparatus as in the plasma etching apparatus as described above, the defects that have not occurred in the past have occurred. For example, as plasma is used, plasma is concentrated in a specific part of the reaction chamber, thereby affecting the oxide film under the gate by arching or charging the plasma, thereby changing the characteristics of the product. These are bad components that can be generated by the use of plasma. In addition, the cause of the additional defects generated by using the plasma is mainly due to the uniformity and discharge of the plasma.

An object of the present invention is to provide a plasma generating apparatus that can ensure the uniformity of the plasma state to improve the reliability of the semiconductor device manufacturing process.

1 is a schematic configuration diagram of a general plasma etching apparatus;

2 is a configuration diagram showing a ground electrode of the plasma generating apparatus of the present invention;

Figure 3 is an embodiment of the ground electrode of the plasma generating apparatus according to the present invention,

4 is another embodiment of the ground electrode of the plasma generating apparatus according to the present invention.

Explanation of symbols on the main parts of the drawings

10; Plasma etching apparatus 11; Reaction chamber

12; High frequency supply electrodes 13,20,21,22; Ground electrode

14; wafer

A plasma generating apparatus according to the present invention for achieving the above object forms a plasma reaction chamber in which predetermined reactive gases are sealed, a high frequency supply electrode for applying high frequency power to reactive gases in the plasma reaction chamber, and a ground path of the plasma. A plasma generating apparatus having a ground electrode, wherein the ground electrode is a ground electrode having multiple dielectric constants.

By using a ground electrode having multiple dielectric constants, the plasma is not concentrated at a specific site, thereby maintaining a uniform density of plasma so that the work can be stably performed.

To this end, the ground electrode may be made of a material having different dielectric constants, and thus, the plasma uniformity may be maintained by using a specific portion of the ground electrode as the ground electrode according to the uniformity of the plasma.

Hereinafter, a plasma generating apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

2 is a configuration diagram showing a ground electrode of the plasma generating apparatus of the present invention.

2, in the plasma generating apparatus according to the present invention, the ground electrode 20 is divided into three parts A, B, and C having different dielectric constants. Each of the parts forms a different path in forming the plasma ground path, thereby compensating the non-uniformity of the plasma on the wafer. That is, the dielectric constant is set to A> B> C so that the ground path is changed according to the uniform state of the plasma so that the plasma is uniform. For example, if the work is performed with the ground path as the B part, and the result of the plasma concentration in the center of the wafer is obtained, the uniform plasma state is obtained by using the C part having the dielectric constant lower than the B part as the ground path. You can get it. The plasma generator having the multiple dielectric constant ground electrodes 20 may be widely applied to a chemical vapor deposition apparatus or an etching apparatus using plasma.

Figure 3 is an embodiment of the ground electrode of the plasma generating apparatus according to the present invention, Figure 4 is another embodiment of the ground electrode of the plasma generating apparatus according to the present invention.

The ground electrode may have a structure as shown in FIG. 2 in order to have multiple dielectric constants, but may have a configuration of the ground electrode 21 as shown in FIG. 3. In other words, by processing the middle portion in A to form a portion B of a material having a different dielectric constant to have a multiple dielectric constant.

In addition, as shown in FIG. 4, the ground electrode 22 may be made of the same material as the conventional art, and portions of A and B having different dielectric constants may be formed by partially coating thin films having different dielectric constants thereon.

Plasma generator according to the present invention having a multi-dielectric ground electrode as described above has the advantage of improving the uniformity of the plasma to improve the reliability of the semiconductor manufacturing process to obtain a higher quality product.

Claims (2)

A plasma generating apparatus comprising a plasma reaction chamber in which predetermined reactive gases are sealed, an electrode applying high frequency power to reactive gases in the plasma reaction chamber, and a ground electrode forming a ground path of the plasma, wherein the ground electrode is Plasma generator, characterized in that having a multiple dielectric constant. The apparatus of claim 1, wherein the plasma reaction chamber is an etching reaction chamber.