KR20000020464A - Cleaning apparatus for manufacturing equipment of semiconductor device - Google Patents

Cleaning apparatus for manufacturing equipment of semiconductor device Download PDF

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Publication number
KR20000020464A
KR20000020464A KR1019980039076A KR19980039076A KR20000020464A KR 20000020464 A KR20000020464 A KR 20000020464A KR 1019980039076 A KR1019980039076 A KR 1019980039076A KR 19980039076 A KR19980039076 A KR 19980039076A KR 20000020464 A KR20000020464 A KR 20000020464A
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KR
South Korea
Prior art keywords
semiconductor device
bubbler
cleaning process
deionized water
bath
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KR1019980039076A
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Korean (ko)
Inventor
오쌍석
Original Assignee
윤종용
삼성전자 주식회사
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Application filed by 윤종용, 삼성전자 주식회사 filed Critical 윤종용
Priority to KR1019980039076A priority Critical patent/KR20000020464A/en
Publication of KR20000020464A publication Critical patent/KR20000020464A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE: A cleaning apparatus for a fabrication equipment of a semiconductor device is provided to minimize time loss due to an additional cleaning process during a cleaning process using ultrasonic wave. CONSTITUTION: A cleaning apparatus comprises: a bath(20) having a DI(Deionized water)supplying part and a DI exhausting part(24), for containing DI therein; an ultrasonic wave generating part(26) for providing the DI of the bath with ultrasonic wave; and a bubbler(28) for bubbling the DI contained in the bath. The bubbler is made of stainless steel. The bubbler may have a hole whose diameter is approximately in a range of 2-3mm, to bubble the DI using N2 gas. A net can be attached to the hole such that impurities are not reversely introduced through the hole. Thus, the apparatus bubbles the DI to fluctuate particles separated from the fabrication equipment, thereby preventing the particles to be re-attached.

Description

반도체소자 제조설비의 세정장치Cleaning device for semiconductor device manufacturing facilities

본 발명은 반도체소자 제조설비의 세정장치에 관한 것으로서, 보다 상세하게는 탈이온수(Deionized Water)에 초음파(Ultra Sonic)를 제공하여 반도체소자 제조설비의 세정공정을 수행할 수 있는 반도체소자 제조설비의 세정장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning apparatus for a semiconductor device manufacturing facility. More particularly, the present invention relates to a semiconductor device manufacturing facility capable of performing a cleaning process of a semiconductor device manufacturing facility by providing ultrasonic (Ultra Sonic) to deionized water. It relates to a cleaning device.

일반적으로 반도체소자는 상기 반도체소자로 제조할 수 있는 웨이퍼(Wafer)를 대상으로 하는 다양한 단위공정 등을 수행함으로써 제조된다.In general, a semiconductor device is manufactured by performing various unit processes and the like for a wafer that can be manufactured using the semiconductor device.

그리고 상기 단위공정의 수행에서는 상기 단위공정의 특성에 부합되도록 구비되는 제조설비를 이용한다.In the performance of the unit process, a manufacturing facility provided to meet the characteristics of the unit process is used.

여기서 상기 반도체소자는 아주 미세한 파티클(Particle) 등과 같은 오염원 등에도 심각한 영향을 받기 때문에 제조공정의 수행시 상기 오염원 등을 철저하게 관리할 뿐만 아니라 상기 제조설비 또한 철저하게 관리하고 있다.In this case, since the semiconductor device is seriously affected by a pollutant such as a minute particle or the like, the semiconductor device is not only thoroughly managed but also thoroughly managed in the manufacturing facility.

이에 따라 상기 제조설비의 부품 등과 같은 구성요소들을 정기적 또는 비정기적으로 세정하는 세정공정을 수행하고 있다.Accordingly, a cleaning process for periodically or irregularly cleaning components such as parts of the manufacturing facility is performed.

특히, 상기 제조설비 중에서 이온주입설비의 세정공정은 도1에 도시된 바와 같이 배스(Bath)(10) 내에 수용된 탈이온수를 이용하는 것으로써, 상기 탈이온수는 탈이온수공급부(12) 및 탈이온수배출부(14)를 이용하여 수용시킨다.In particular, the cleaning process of the ion implantation equipment in the manufacturing equipment is to use the deionized water contained in the bath (10) as shown in Figure 1, the deionized water is deionized water supply unit 12 and deionized water discharge It is accommodated using the part 14.

그리고 초음파발생부(16)를 이용하여 상기 배스(10) 내에 수용된 탈이온수에 초음파를 제공함으로써 효율적으로 상기 세정공정을 수행한다.In addition, the cleaning process is efficiently performed by providing ultrasonic waves to the deionized water contained in the bath 10 using the ultrasonic generator 16.

그러나 상기 초음파를 이용한 세정공정의 수행시 세정이 이루어짐으로써 상기 제조설비로부터 분리되는 파티클 등은 상기 세정공정이 종료될 때까지 유동없이 그대로 존재하였기 때문에 상기 파티클 등이 다시 상기 제조설비에 흡착되는 상황이 빈번하게 발생하였다.However, when the cleaning process is performed using the ultrasonic wave, the particles, etc., separated from the manufacturing facility remain without flow until the cleaning process is completed, so that the particles are adsorbed to the manufacturing facility again. Occurred frequently.

이에 따라 종래에는 상기와 같은 세정공정을 수행한 후, 별도의 세정공정을 다시 수행하였다.Accordingly, after performing the cleaning process as described above, a separate cleaning process was performed again.

즉, 초음파를 이용한 세정공정의 수행시 파티클 등의 유동이 없었기 때문에 상기와 같이 초음파를 이용한 세정공정을 수행한 후, 다시 2차 세정공정을 수행하는 것이었다.That is, since there was no flow of particles and the like during the cleaning process using ultrasonic waves, the second cleaning process was performed again after performing the cleaning process using ultrasonic waves as described above.

따라서 종래의 초음파를 이용한 세정공정은 별도의 세정공정을 수행함으로써 타임로스 등을 유발시키는 원인으로 작용하여 반도체소자 제조설비의 유지보수에 따른 효율성이 저하되는 문제점이 있었다.Therefore, the conventional cleaning process using ultrasonic waves has a problem in that the efficiency of the maintenance of the semiconductor device manufacturing equipment is reduced by acting as a cause of causing a time loss by performing a separate cleaning process.

본 발명의 목적은, 초음파를 이용한 세정공정의 수행시 별도의 세정공정의 수행으로 인한 타임로스 등을 최소화시킴으로써 반도체소자 제조설비의 유지보수에 따른 효율성을 향상시키기 위한 반도체소자 제조설비의 세정장치을 제공하는 데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide a cleaning device for a semiconductor device manufacturing facility for improving the efficiency according to the maintenance of the semiconductor device manufacturing facility by minimizing the time loss caused by the separate cleaning process when performing the cleaning process using ultrasonic waves. There is.

도1은 종래의 반도체소자 제조설비의 세정장치를 설명하기 위한 구성도이다.1 is a configuration diagram for explaining a cleaning apparatus of a conventional semiconductor device manufacturing facility.

도2는 본 발명에 따른 반도체소자 제조설비의 세정장치의 일 실시예를 설명하기 위한 구성도이다.2 is a configuration diagram illustrating an embodiment of a cleaning apparatus for a semiconductor device manufacturing apparatus according to the present invention.

※도면의 주요부분에 대한 부호의 설명※ Explanation of symbols for main parts of drawing

10, 20 : 배스 12, 22 : 탈이온수공급부10, 20: 12, 22: deionized water supply unit

14, 24 : 탈이온수배출부 16, 26 : 초음파발생부14, 24: deionized water discharge unit 16, 26: ultrasonic generator

28 : 버블러28: bubbler

상기 목적을 달성하기 위한 본 발명에 따른 반도체소자 제조설비의 세정장치는, 배스 내에 수용된 탈이온수에 초음파를 제공하여 세정공정을 수행할 수 있는 반도체소자 제조설비의 세정장치에 있어서, 상기 배스 내에 수용된 탈이온수를 버블링시킬 수 있는 버블러를 더 구비시킨 것을 특징으로 한다.In the cleaning device for a semiconductor device manufacturing apparatus according to the present invention for achieving the above object, in the cleaning device for a semiconductor device manufacturing equipment that can perform a cleaning process by providing ultrasonic waves to deionized water contained in the bath, housed in the bath Characterized in that it further comprises a bubbler capable of bubbling deionized water.

그리고 상기 버블러는 스테인레스스틸재질로 형성시킬 수 있는 것으로써, 상기 버블러에는 2mm 내지 3mm 정도의 직경을 가지는 다수개의 홀들을 형성시켜 상기 홀을 통하여 제공되는 N2가스를 이용하여 상기 탈이온수를 버블링시키는 것이 바람직하다.In addition, the bubbler may be formed of a stainless steel material, and the bubbler forms a plurality of holes having a diameter of about 2 mm to 3 mm to form the deionized water using N 2 gas provided through the hole. It is preferable to bubble.

또한 상기 버블러는 상기 버블러 내로 불순물이 역유입되는 것을 방지할 수 있도록 상기 홀에 그물망을 부착시키는 것이 바람직하다.In addition, the bubbler is preferably attached to the net in the hole to prevent the back flow of impurities into the bubbler.

이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도2는 본 발명에 따른 반도체소자 제조설비의 세정장치의 일 실시예를 설명하기 위한 구성도이다.2 is a configuration diagram illustrating an embodiment of a cleaning apparatus for a semiconductor device manufacturing apparatus according to the present invention.

먼저, 제조설비를 세정하기 위한 탈이온수를 수용할 수 있는 배스(20)가 구비되어 있다.First, the bath 20 which can accommodate the deionized water for washing | cleaning a manufacturing facility is provided.

여기서 상기 탈이온수는 탈이온수공급부(22) 및 탈이온수배출부(24)를 이용하여 상기 배스(20) 내에 수용시킬 수 있다.The deionized water may be accommodated in the bath 20 using the deionized water supply unit 22 and the deionized water discharge unit 24.

그리고 상기 세정공정의 수행시 효율적인 세정을 위하여 탈이온수에 초음파를 제공할 수 있는 초음파발생부(26)가 구비되어 있다.In addition, an ultrasonic generator 26 capable of providing ultrasonic waves to deionized water for efficient cleaning during the cleaning process is provided.

또한 본 발명은 상기 초음파를 이용한 세정공정의 수행시 상기 배스(20) 내에 수용된 탈이온수를 버블링(Bubbling)시킬 수 있는 버블러(28)를 구비시킨다.In addition, the present invention includes a bubbler 28 capable of bubbling deionized water contained in the bath 20 when performing the cleaning process using ultrasonic waves.

여기서 본 발명의 상기 버블러(28)는 스테인레스스틸(Stainless Steel)재질로 형성시킬 수 있는 것으로써, 상기 버블러(28)에는 N2가스를 이용하여 상기 탈이온수를 버블링시킬 수 있도록 약 2mm 내지 3mm 정도의 직경을 가지는 홀(Hole)(도시되지 않음)들을 형성시킬 수 있다.Here, the bubbler 28 of the present invention may be formed of stainless steel, and the bubbler 28 may bubble the deionized water by using N 2 gas to about 2 mm. Holes (not shown) having a diameter of about 3 mm may be formed.

그리고 본 발명에서는 상기 버블러(28) 내로 불순물이 역유입되는 것을 방지할 수 있도록 상기 홀에 그물망(도시되지 않음)을 부착시킨다.In the present invention, a mesh (not shown) is attached to the hole so as to prevent backflow of impurities into the bubbler 28.

이러한 구성으로 이루어지는 본 발명은 상기 제조설비 특히, 이온주입설비의 세정공정의 수행시 상기 버블러(28)를 이용하여 상기 탈이온수를 버블링시킴으로써 상기 제조설비로부터 분리되는 파티클 등을 유동시킬 수 있다.According to the present invention having the above structure, particles separated from the manufacturing facility may be flown by bubbling the deionized water using the bubbler 28 during the cleaning process of the manufacturing facility, in particular, the ion implantation facility. .

이에 따라 상기 파티클 등의 유동으로 인하여 상기 제조설비로부터 분리된 파티클이 다시 제조설비로 흡착되는 것을 방지할 수 있다.Accordingly, the particles separated from the manufacturing equipment due to the flow of the particles, etc. can be prevented from being adsorbed back to the manufacturing equipment.

즉, 본 발명은 상기 초음파를 이용한 세정공정의 수행시 상기 버블러(28)를 이용하여 상기 파티클 등을 유동시킴으로써 상기 파티클이 다시 제조설비로 흡착되는 것을 방지할 수 있는 것이다.That is, the present invention can prevent the particles from being adsorbed back to the manufacturing equipment by flowing the particles and the like using the bubbler 28 during the cleaning process using the ultrasonic wave.

이에 따라 상기 파티클의 재흡착으로 인하여 2차 세정공정을 수행하던 종래와는 달리 본 발명은 초음파를 이용한 한번의 세정공정을 수행함으로써 상기 제조설비를 효율적으로 세정시킬 수 있다.Accordingly, the present invention can efficiently clean the manufacturing equipment by performing one cleaning process using ultrasonic waves, unlike the prior art, in which the secondary cleaning process is performed due to the resorption of the particles.

따라서, 본 발명에 의하면 초음파를 이용한 세정공정의 수행시 별도의 세정공정의 수행으로 인한 타임로스 등을 최소화시킴으로써 반도체소자 제조설비의 유지보수에 따른 효율성이 향상되는 효과가 있다.Therefore, according to the present invention, the efficiency of the maintenance of the semiconductor device manufacturing equipment is improved by minimizing the time loss caused by the separate cleaning process when performing the cleaning process using ultrasonic waves.

이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (2)

배스(Bath) 내에 수용된 탈이온수(Deionized Wafer)에 초음파를 제공하여 세정공정을 수행할 수 있는 반도체소자 제조설비의 세정장치에 있어서,In the cleaning device of a semiconductor device manufacturing equipment capable of performing a cleaning process by providing ultrasonic waves to deionized water contained in the bath (Deathized Wafer), 상기 배스 내에 수용된 탈이온수를 버블링(Bubbling)시킬 수 있는 버블러를 더 구비시킨 것을 특징으로 하는 반도체소자 제조설비의 세정장치.And a bubbler capable of bubbling deionized water contained in the bath. 제 1 항에 있어서,The method of claim 1, 상기 버블러는 2mm 내지 3mm 정도의 직경을 가지는 다수개의 홀(Hole)들을 형성시키고, 상기 홀에는 그물망을 더 부착시키는 것을 특징으로 하는 상기 반도체소자 제조설비의 세정장치.The bubbler is a cleaning device of the semiconductor device manufacturing equipment, characterized in that for forming a plurality of holes (Hole) having a diameter of about 2mm to 3mm, and further attaching a mesh to the hole.
KR1019980039076A 1998-09-21 1998-09-21 Cleaning apparatus for manufacturing equipment of semiconductor device KR20000020464A (en)

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KR20020020081A (en) * 2000-09-07 2002-03-14 윤종용 Method for cleaning of polishing pad conditioner and apparatus for performing the same
KR100398953B1 (en) * 2000-11-04 2003-09-19 일동화학 주식회사 Method for recycling microfilter used for filtering chromium etchant comprised mainly of ceric ammonium nitrate
KR20160068545A (en) * 2014-12-05 2016-06-15 주식회사 가온랩 Car holder, and fixing structure for the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020020081A (en) * 2000-09-07 2002-03-14 윤종용 Method for cleaning of polishing pad conditioner and apparatus for performing the same
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KR100398953B1 (en) * 2000-11-04 2003-09-19 일동화학 주식회사 Method for recycling microfilter used for filtering chromium etchant comprised mainly of ceric ammonium nitrate
KR20160068545A (en) * 2014-12-05 2016-06-15 주식회사 가온랩 Car holder, and fixing structure for the same

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