KR20000018859U - Apparatus for polishing semiconductor wafer - Google Patents
Apparatus for polishing semiconductor wafer Download PDFInfo
- Publication number
- KR20000018859U KR20000018859U KR2019990005114U KR19990005114U KR20000018859U KR 20000018859 U KR20000018859 U KR 20000018859U KR 2019990005114 U KR2019990005114 U KR 2019990005114U KR 19990005114 U KR19990005114 U KR 19990005114U KR 20000018859 U KR20000018859 U KR 20000018859U
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- polishing
- pad
- head
- plate
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 53
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 238000005507 spraying Methods 0.000 claims abstract description 5
- 239000003082 abrasive agent Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 54
- 238000012876 topography Methods 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract 1
- 238000007517 polishing process Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
- B24B41/047—Grinding heads for working on plane surfaces
- B24B41/0475—Grinding heads for working on plane surfaces equipped with oscillating abrasive blocks, e.g. mounted on a rotating head
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
본 고안은 반도체 웨이퍼 연마장치에 관한 것으로, 상면에 동심원상으로 수개의 웨이퍼 안착홈(11a)이 형성되며 회전 가능하도록 설치되는 플레이트(11)와, 이 플레이트(11)의 상면에 연마제를 분사하는 디스펜서(12)와, 상기 각 웨이퍼 안착홈(11a)의 상측에 위치되며 웨이퍼(W)와 접촉된 상태에서 웨이퍼(W)를 연마하기 위한 다수개의 연마패드(14)들이 저면에 결합되는 헤드(13)와, 이 헤드(13)의 내부에 상기 연마패드(14)와 결합되어 연마패드(14)들을 자전시키는 회전모터(15)와, 웨이퍼(W)의 연마가 완료된 이후 상기 연마패드(14)들을 평탄화시키는 패드 컨디셔너(미도시)를 포함하여 구성되며, 따라서 본 고안에 의하면 헤드의 하부에 부착된 작은 직경을 가진 수개의 패드를 이용하여 웨이퍼를 연마함으로써, 웨이퍼 전면의 각 부분별로 연마량이 조절 가능하므로 웨이퍼 하지 필름의 토포로지(TOPOROGY) 또는 패턴 프로파일(PATTERN PROFILE)에 따라 잔막의 유니포미티(UNIFORMITY)를 조절할 수 있게 된다.The present invention relates to a semiconductor wafer polishing apparatus, wherein a plurality of wafer seating grooves (11a) are formed concentrically on the upper surface, and the plate (11) is installed so as to be rotatable, and spraying the abrasive on the upper surface of the plate (11) A head having a dispenser 12 and a plurality of polishing pads 14 positioned on an upper side of each wafer seating groove 11a and coupled to a bottom thereof for polishing the wafer W in contact with the wafer W ( 13, a rotating motor 15 coupled to the polishing pad 14 inside the head 13 to rotate the polishing pads 14, and the polishing pad 14 after polishing of the wafer W is completed. ) And a pad conditioner (not shown) to planarize the wafers. Thus, according to the present invention, by polishing the wafer using several pads having a small diameter attached to the lower part of the head, Adjustable Not in accordance with the wafer topography Lodge (TOPOROGY) or the pattern profile (PROFILE PATTERN) of the film it is possible to control the glass film uniformity (UNIFORMITY).
Description
본 고안은 반도체 웨이퍼 연마장치에 관한 것으로, 특히 웨이퍼 전면(全面)의 각 부위별 연마정도를 조절할 수 있도록 한 것이다.The present invention relates to a semiconductor wafer polishing apparatus, and in particular, to adjust the degree of polishing for each part of the entire surface of the wafer.
일반적으로 웨이퍼 연마공정은 기공을 가진 인조 피혁(Polyurethane synthetic material) 패드에 연마제(SiO2+ DI Water + KOH)를 일정량 공급한 후, 웨이퍼에 증착된 증착막을 상기 패드와 마찰을 일으켜 기계 화학적 작용을 복합적으로 수행하여 일정 두께로 연마하는 공정이다.In general, the wafer polishing process supplies a predetermined amount of abrasive (SiO 2 + DI Water + KOH) to a pad of synthetic polyurethane material having pores, and then rubs the deposited film deposited on the wafer with the pad to perform a mechanical chemical action. It is a process to perform a complex polishing to a certain thickness.
이와 같은 연마공정을 진행하기 위한 종래의 웨이퍼 연마장치는 도 1에 도시한 바와 같이, 일측 방향으로 회전하는 플레이트(1)와, 이 플레이트(1)의 상면에 부착되며 상면에는 원심 방향으로 다수개의 연마제 홈(2a)이 파여 있는 패드(2)와, 이 패드(2)의 연마제 홈(2a)에 연마제를 분사하는 디스펜서(3)와, 웨이퍼(W)를 파지한 채 상기 패드(2)의 상면에 웨이퍼(W)를 접촉시킨 상태에서 상기 플레이트(1)의 회전방향과 동일한 방향으로 회전하여 웨이퍼(W) 상면에 증착된 증착막을 평탄화시키는 헤드(4)와, 상기 패드(2)의 일부분에서 웨이퍼(W) 연마가 진행되는 동안 패드(2)의 다른 부분에서 패드(2)의 상면을 초기와 같은 상태로 평탄화시키는 패드 컨디셔너(5)를 포함하여 구성되어 있다.As shown in FIG. 1, a conventional wafer polishing apparatus for performing such a polishing process is attached to a plate 1 that rotates in one direction and an upper surface of the plate 1, and a plurality of upper surfaces of the plate 1 in a centrifugal direction. The pad 2 having the abrasive grooves 2a recessed therein, the dispenser 3 for spraying abrasives into the abrasive grooves 2a of the pads 2, and the wafer W while holding the wafer W. A head 4 and a portion of the pad 2 that rotate in the same direction as the rotational direction of the plate 1 while the wafer W is in contact with the upper surface to planarize the deposited film deposited on the upper surface of the wafer W. It is configured to include a pad conditioner (5) to planarize the upper surface of the pad (2) in the same state as the initial state in the other portion of the pad (2) during the wafer W polishing.
이와 같이 구성된 웨이퍼 연마장치는, 우선 디스펜서(3)로부터 패드(2)에 형성된 연마제 홈(2a)으로 연마제를 분사한 후, 연마작업을 진행하고자 하는 웨이퍼(W)의 면이 상기 패드(2)와 접촉되는 상태로 헤드(4)가 웨이퍼(W)를 파지하여 상기 패드(2)의 상면에 접촉시키면, 플레이트(1) 및 헤드(4)는 동일 방향으로 회전하면서 상기 헤드(4)에 의해 패드(2) 상면에 밀착된 웨이퍼(W)를 연마하게 된다.In the wafer polishing apparatus configured as described above, the abrasive is first injected from the dispenser 3 into the abrasive groove 2a formed in the pad 2, and then the surface of the wafer W to be polished is formed on the pad 2. When the head 4 grips the wafer W in contact with the upper surface of the pad 2, the plate 1 and the head 4 are rotated in the same direction by the head 4. The wafer W in close contact with the upper surface of the pad 2 is polished.
이때, 상기 연마제 홈(2a)으로 흘러 들어간 연마제는 플레이트(1)의 회전 원심력에 의해 패드(2)와 웨이퍼(W)가 접촉되는 면에 균일하게 도포되면서 연마작용 및 윤활작용을 하게 된다.At this time, the abrasive flowing into the abrasive groove 2a is uniformly applied to the surface where the pad 2 is in contact with the wafer W by the rotating centrifugal force of the plate 1 to perform the polishing and lubricating action.
이와 같이 웨이퍼(W)의 연마작업이 진행되는 동안 패드 컨디셔너(5)가 플레이트(1) 쪽으로 이송되어 상기 패드(2)의 상면에 밀착되어 상기 패드(2)를 초기 상태와 같이 연마하게 된다.As described above, the pad conditioner 5 is transferred toward the plate 1 while the polishing operation of the wafer W is carried out to be in close contact with the upper surface of the pad 2 to polish the pad 2 as in the initial state.
그러나, 상기와 같은 종래 기술은 패드 컨디셔너(5)의 패드(2) 위를 궤적을 그리면서 이동하는 동안 점차적으로 패드(2)의 평탄화 상태가 불균일하게 이루어지게 되며, 따라서 상기 평탄도가 불균일한 패드(2)에 전면이 닿은채로 연마되는 웨이퍼(W)에도 불균일한 연마가 이루어지는 문제점이 있었다.However, the prior art as described above gradually becomes non-uniform in the flattening state of the pad 2 while moving on the pad 2 of the pad conditioner 5 in a trajectory, and thus the flatness is uneven. There was a problem in that non-uniform polishing is also performed on the wafer W polished while the entire surface is in contact with the pad 2.
본 고안은 이러한 문제점을 해결하기 위한 것으로, 웨이퍼의 부분별로 연마정도를 달리 하여 평탄화를 향상시키기 위한 반도체 웨이퍼 연마장치를 제공하는데 그 목적이 있다.The present invention is to solve this problem, it is an object of the present invention to provide a semiconductor wafer polishing apparatus for improving the planarization by varying the degree of polishing for each part of the wafer.
도 1은 종래 기술에 의한 반도체 웨이퍼 연마장치를 개략적으로 보인 단면도.1 is a cross-sectional view schematically showing a semiconductor wafer polishing apparatus according to the prior art.
도 2는 본 고안에 의한 반도체 웨이퍼 연마장치를 개략적으로 보인 단면도.Figure 2 is a cross-sectional view schematically showing a semiconductor wafer polishing apparatus according to the present invention.
**도면의 주요부분에 대한 부호의 설명**** Description of the symbols for the main parts of the drawings **
11 ; 플레이트 11a ; 웨이퍼 안착홈11; Plate 11a; Wafer Seating Groove
12 ; 디스펜서 13 ; 헤드12; Dispenser 13; head
14 ; 연마패드 15 ; 회전모터14; Polishing pad 15; Rotary motor
상기 목적을 달성하기 위한 본 고안은 상면에 동심원상으로 수개의 웨이퍼 안착홈이 형성되며 회전 가능하도록 설치되는 플레이트와, 이 플레이트의 상면에 연마제를 분사하는 디스펜서와, 상기 각 웨이퍼 안착홈의 상측에 위치되며 웨이퍼와 접촉된 상태에서 웨이퍼를 연마하기 위한 다수개의 연마패드들이 저면에 결합되는 헤드와, 이 헤드의 내부에 상기 연마패드와 결합되어 연마패드들을 자전시키는 회전모터와, 웨이퍼의 연마가 완료된 이후 상기 연마패드들을 평탄화시키는 패드 컨디셔너를 포함하여 구성되는 것을 특징으로 한다.The present invention for achieving the above object is a plate that is formed so that a plurality of wafer seating grooves are formed concentrically on the upper surface, the dispenser for spraying the abrasive on the upper surface of the plate, and the upper side of each wafer seating groove A head having a plurality of polishing pads coupled to a bottom thereof for positioning and polishing the wafer while in contact with the wafer, a rotating motor coupled to the polishing pad to rotate the polishing pads inside the head, and polishing of the wafer is completed. After that, it characterized in that it comprises a pad conditioner for flattening the polishing pads.
이하, 본 고안에 의한 반도체 웨이퍼 연마장치를 첨부도면에 도시한 실시예에 따라 설명하면 다음과 같다.Hereinafter, the semiconductor wafer polishing apparatus according to the present invention will be described according to the embodiment shown in the accompanying drawings.
본 고안의 웨이퍼 연마장치는 도 3 및 도 4에 도시한 바와 같이, 일측 방향으로 회전 가능하도록 설치되는 플레이트(11)와, 이 플레이트(11)의 상면에 연마제를 분사하는 디스펜서(12)와, 상기 플레이트(11)의 상면에 웨이퍼(W)가 안착된 상태에서 상기 플레이트(11)의 회전방향과 동일한 방향으로 회전하여 웨이퍼(W)의 상면을 평탄화시키는 헤드(13)와, 웨이퍼(W)의 연마가 완료된 이후 상기 패드(14)의 상면을 평탄화시키는 패드 컨디셔너(미도시)를 포함하여 구성된다.3 and 4, the wafer polishing apparatus of the present invention, the plate 11 is installed so as to be rotatable in one direction, the dispenser 12 for spraying the abrasive on the upper surface of the plate 11, The head 13 and the wafer W that planarize the top surface of the wafer W by rotating in the same direction as the rotation direction of the plate 11 while the wafer W is seated on the top surface of the plate 11. And a pad conditioner (not shown) to planarize the top surface of the pad 14 after polishing of the substrate is completed.
이때, 상기 플레이트(11)의 상면에는 웨이퍼(W)의 직경과 대응되도록 동심원상으로 수개의 웨이퍼 안착홈(11a)을 형성하여 웨이퍼(W)가 안착 고정될 수 있도록 하는데, 상기 웨이퍼 안착홈(11a)의 깊이는 웨이퍼(W) 두께의 절반 이상이 플레이트(11)의 표면 위로 노출되도록 형성한다.In this case, a plurality of wafer seating grooves 11a are formed on the upper surface of the plate 11 so as to correspond to the diameter of the wafer W so that the wafer W can be seated and fixed. The depth of 11a) is formed such that at least half of the thickness of the wafer W is exposed over the surface of the plate 11.
또한, 상기 헤드(13)의 저면에는 웨이퍼(W)의 전면에 균일하게 접촉할 수 있도록 작은 직경을 가진 수개의 연마패드(14)들이 부착되는데, 상기 헤드(13)의 내부에는 상기 각각의 연마패드(14)들을 자전시킬 수 있도록 회전모터(15)가 결합 설치된다.In addition, a plurality of polishing pads 14 having a small diameter are attached to the bottom of the head 13 so as to uniformly contact the front surface of the wafer W. Each of the polishing pads 14 is attached to the inside of the head 13. The rotary motor 15 is coupled to the pads 14 so as to rotate.
상기와 같이 구성된 본 고안에 의한 웨이퍼 연마장치의 작용을 설명하면 다음과 같다.Referring to the operation of the wafer polishing apparatus according to the present invention configured as described above are as follows.
우선, 연마하기 위한 면이 상측을 향하도록 웨이퍼(W)를 플레이트(11)의 웨이퍼 안착홈(11a)에 로딩시킨 후, 상기 플레이트(11)에 일정량의 연마제를 공급한다.First, the wafer W is loaded in the wafer seating groove 11a of the plate 11 so that the surface for polishing faces upwards, and then a predetermined amount of abrasive is supplied to the plate 11.
그후, 플레이트(11)를 일측 방향으로 회전시킴과 동시에 헤드(13)의 연마패드(14)들을 자전 및 공전시키면서 웨이퍼(W)에 접촉시킨 후 연마작업을 실시한다.Thereafter, the plate 11 is rotated in one direction and the polishing pads 14 of the head 13 are brought into contact with the wafer W while being rotated and revolved, and then polishing is performed.
이때, 하지 필름 또는 패턴에 따라 각 연마패드(14)의 스피드, 압력 또는 헤드(13)의 스위프 조건을 설정함으로써, 웨이퍼(W)의 각 부분별로 연마정도를 상이하게 진행할 수 있으므로 평탄화를 향상시킬 수 있게 된다.At this time, by setting the speed, pressure, or sweep conditions of the head 13 of each polishing pad 14 according to the underlying film or pattern, the degree of polishing can be differently progressed for each part of the wafer W, so that the flattening can be improved. It becomes possible.
이와 같이 연마작업이 완료되면 패드 컨디셔너를 고정시킨 상태에서 상기 헤드(13)의 연마패드(14)들을 패드 컨디셔너에 접촉시킨 채 자전 및 공전시켜 상기 헤드(13)의 연마패드(14)들을 초기화상태로 복원시키기 위한 연마작업을 실시한다.When the polishing operation is completed as described above, the polishing pads 14 of the head 13 are initialized by rotating and rotating the polishing pads 14 of the head 13 in contact with the pad conditioners while the pad conditioner is fixed. Polishing work to restore to
이상에서 설명한 바와 같이, 본 고안에 의하면 헤드의 하부에 작은 직경을 가진 수개의 패드를 부착하여 웨이퍼를 연마함으로써, 웨이퍼 전면의 각 부분별로 연마량이 조절 가능하므로 웨이퍼 하지 필름의 토포로지(TOPOROGY) 또는 패턴 프로파일(PATTERN PROFILE)에 따라 잔막의 유니포미티(UNIFORMITY)를 조절할 수 있게 된다.As described above, according to the present invention, by polishing several wafers by attaching several pads having a small diameter to the lower part of the head, the amount of polishing can be adjusted for each part of the front surface of the wafer, so that the topography of the wafer underlay film is According to the pattern profile (PATTERN PROFILE) it is possible to adjust the unity (UNIFORMITY) of the residual film.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019990005114U KR20000018859U (en) | 1999-03-30 | 1999-03-30 | Apparatus for polishing semiconductor wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019990005114U KR20000018859U (en) | 1999-03-30 | 1999-03-30 | Apparatus for polishing semiconductor wafer |
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| KR20000018859U true KR20000018859U (en) | 2000-10-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100604776B1 (en) * | 2004-12-31 | 2006-07-28 | 동부일렉트로닉스 주식회사 | Semiconductor Grinding Apparatus |
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1999
- 1999-03-30 KR KR2019990005114U patent/KR20000018859U/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100604776B1 (en) * | 2004-12-31 | 2006-07-28 | 동부일렉트로닉스 주식회사 | Semiconductor Grinding Apparatus |
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