KR20000018617A - Diffusion furnace processing temperature control device of diffusion installation - Google Patents
Diffusion furnace processing temperature control device of diffusion installation Download PDFInfo
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- KR20000018617A KR20000018617A KR1019980036280A KR19980036280A KR20000018617A KR 20000018617 A KR20000018617 A KR 20000018617A KR 1019980036280 A KR1019980036280 A KR 1019980036280A KR 19980036280 A KR19980036280 A KR 19980036280A KR 20000018617 A KR20000018617 A KR 20000018617A
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- temperature
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- wafer
- sensing means
- control device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Abstract
Description
본 발명은 확산설비의 확산로 공정온도조절장치에 관한 것으로서, 보다 상세하게는 웨이퍼 하부영역을 다수개의 영역으로 분할하여 전 영역의 온도를 균일하게 조절할 수 있는 확산설비의 확산로 공정온도조절장치에 관한 것이다.The present invention relates to a diffusion furnace process temperature control device, and more particularly, to a diffusion furnace process temperature control device capable of uniformly controlling the temperature of the entire area by dividing the lower region of the wafer into a plurality of regions. It is about.
반도체 제조공정에서는 설비내 환경의 변화에 따라 각 제조공정의 결과가 다르게 도출될 수 있으므로, 설비내 환경을 관찰, 유지하는 것은 중요하다. 통상적으로, 반도체 제조공정내에서 웨이퍼는 사진, 이온확산, 식각, 화학기상증착 및 금속증착 등의 공정이 반복적으로 이루어져 반도체장치로 제작되며, 이들 각 공정을 수행하는 제조설비는 양질의 반도체장치를 제작하기 위해 특정상태를 설정하고 있다.In the semiconductor manufacturing process, it is important to observe and maintain the environment in the facility because the results of each manufacturing process may be different according to the change in the environment in the facility. Typically, a wafer is fabricated as a semiconductor device by repeatedly performing processes such as photographing, ion diffusion, etching, chemical vapor deposition, and metal deposition in a semiconductor manufacturing process. We are setting a specific state for production.
이렇게 설정된 상태 즉, 진공상태, 온도상태, 가스주입상태 등은 웨이퍼가 반도체장치로 제작됨에 있어서, 반도체장치의 각 부분의 형성 및 특성을 변화시키는 주요원인이 되므로 각 공정에서의 요구조건을 만족하는 상태를 유지하는 것이 중요시되고 있다.The state set in this way, that is, the vacuum state, the temperature state, the gas injection state, etc., is a major cause of changing the formation and characteristics of each part of the semiconductor device when the wafer is manufactured as a semiconductor device. Maintaining state is important.
따라서, 각각의 제조설비에는 공정을 수행함에 있어 적정한 공정조건이 유지되는지를 측정, 감지하기 위한 감지장치가 설치되며, 이들 감지장치중 온도상태를 감지하기 위한 온도감지장치에는 열전온도계가 쓰이고 있다.Therefore, each manufacturing facility is provided with a sensing device for measuring and detecting whether proper process conditions are maintained in performing the process, and thermoelectric thermometers are used in the temperature sensing device for sensing a temperature state among these sensing devices.
도1을 참조하면, 튜브(10) 외부 상하에 34개의 램프(12)와 사이드에 4개의 램프(미도시)가 있으며, 상기 튜브(10) 내의 웨이퍼 트레이(14)상 받침대 위에 안착된 웨이퍼(16)의 미끄러짐을 방지하는 가이드링(18)이 웨이퍼 트레이(14)의 상면 외주면에 돌설되어 있다. 그리고, 웨이퍼(16) 하부에 핫 라이너(Hot Liner)(20)가 위치한다. 상기 튜브(10) 일측의 오에치-프리(OH-Free) 석영관 부분에 대향하여 외부에 고온도계(22)가 위치한다.Referring to FIG. 1, there are 34 lamps 12 above and below the tube 10 and 4 lamps (not shown) on the side, and a wafer seated on a pedestal on the wafer tray 14 in the tube 10. A guide ring 18 for preventing slippage of 16 is protruded on the outer peripheral surface of the upper surface of the wafer tray 14. In addition, a hot liner 20 is positioned below the wafer 16. The pyrometer 22 is positioned outside the OH-free quartz tube portion of one side of the tube 10.
웨이퍼 트레이(14)에 놓인 웨이퍼(16)는 상하 34개의 램프(12)와 사이드 4개의 램프(12)에 의해 열을 받는다. 이 열은 웨이퍼(16) 하단에 설치된 핫 라이너(20)에 의해 열의 복사, 반사의 오차를 없애 일정하게 방출되게 하여 고온도계(22)가 핫 라이너(20)를 통해 온도를 제어한다. 그러나, 고온도계가 읽어들인 온도는 웨이퍼의 각 지역에 따른 온도차를 정밀하게 제어하지 못하여 공정불량을 유발하는 문제점이 있다.The wafer 16 placed on the wafer tray 14 is heated by the upper and lower 34 lamps 12 and the four side lamps 12. The heat is constantly released by the hot liner 20 installed at the bottom of the wafer 16 to eliminate errors in radiation and reflection of the heat, so that the pyrometer 22 controls the temperature through the hot liner 20. However, the temperature read by the pyrometer does not control the temperature difference according to each region of the wafer precisely, causing a process defect.
본 발명의 목적은, 웨이퍼 하부지역의 온도를 균일하게 유지하여 웨이퍼에 증착되는 막의 두께를 균일하게 하는 확산설비의 확산로 공정온도조절장치를 제공하는 데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide a process temperature control apparatus for diffusion of diffusion equipment which maintains the temperature in the lower region of the wafer uniformly and makes the thickness of the film deposited on the wafer uniform.
도1은 종래의 확산설비의 확산로 내부를 나타낸 측단면도이다.1 is a side cross-sectional view showing the interior of a diffusion path of a conventional diffusion facility.
도2는 본 발명에 따른 확산설비의 확산로 공정온도조절장치의 실시예를 나타내는 측단면도이다.Figure 2 is a side cross-sectional view showing an embodiment of the diffusion furnace process temperature control apparatus of the diffusion equipment according to the present invention.
도3은 도2에서 열전온도계가 설치된 상태를 나타내는 평면도이다.3 is a plan view illustrating a state in which a thermoelectric thermometer is installed in FIG. 2.
도4는 본 발명을 달성하기 위한 블럭구성도이다.4 is a block diagram for achieving the present invention.
※ 도면의 주요 부분에 대한 부호의 설명※ Explanation of codes for main parts of drawing
10,30 : 튜브 12,32 : 램프10,30: tube 12,32: lamp
14,34 : 웨이퍼 트레이 16,38 : 웨이퍼14,34 wafer tray 16,38 wafer
18,40 : 가이드링 20 : 핫 라이너18,40: guide ring 20: hot liner
22 : 고온도계 36 : 가스확산판22: pyrometer 36: gas diffusion plate
42 : 열전온도계 44 : 제어부42: thermoelectric thermometer 44: control unit
46 : 램프구동부46 lamp driving unit
상기 목적을 달성하기 위한 본 발명에 따른 확산설비의 확산로 공정온도조절장치는 웨이퍼가 내입된 튜브내의 온도에 따라 튜브를 감싸고 있는 다수개의 램프세기를 조절하는 확산설비의 확산로 공정온도조절장치에 있어서, 다수개의 영역으로 분할된 웨이퍼 하부영역에 설치되어 각 영역의 온도를 측정하는 복수개의 온도감지수단, 상기 각 영역의 온도값을 분석하여 이를 조절하기 위한 보상제어값을 생성하는 제어수단 및 상기 보상제어값에 의해 램프의 세기를 그룹별로 조절하는 램프구동수단을 구비하여 이루어진다.Diffusion furnace process temperature control apparatus of the diffusion apparatus according to the present invention for achieving the above object is a diffusion furnace process temperature control apparatus for controlling a plurality of lamp intensity surrounding the tube in accordance with the temperature of the tube in which the wafer is embedded. A plurality of temperature sensing means for measuring the temperature of each region, the control means for analyzing the temperature value of each region to generate a compensation control value for adjusting it; Lamp driving means for adjusting the intensity of the lamp by groups by the compensation control value is made.
상기 온도감지수단이 1 내지 10개가 설치되는 것이 바람직하며, 더욱 바람직하기로는 10개를 설치하는 것이다.It is preferable that 1-10 pieces of said temperature sensing means are installed, More preferably, 10 pieces are provided.
상기 온도감지수단은 웨이퍼 플랫존 방향과 수평으로 혹은, 또한 수직으로 배열할 수 있다.The temperature sensing means may be arranged horizontally or vertically with the wafer flat zone direction.
상기 램프의 그룹은 상기 온도감지수단의 수와 일대일로 대응되게 분할되어짐이 바람직하다.Preferably, the lamp group is divided one-to-one with the number of temperature sensing means.
상기 온도감지수단은 상기 웨이퍼 플랫존에서 1 내지 3㎝의 간격으로 배열되어지며, 바람직하기로는 2㎝ 간격으로 배열되어지는 것이다.The temperature sensing means is arranged at intervals of 1 to 3 cm in the wafer flat zone, preferably at 2 cm intervals.
상기 온도감지수단으로는 열전온도계가 사용된다.A thermoelectric thermometer is used as the temperature sensing means.
이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도2를 참조하면, 튜브(30) 외부 상하에 34개의 램프(32)가 있으며, 측면에 4개의 램프(미도시)가 더 설치된다. 상기 튜브(30) 내부의 바닥면에 웨이퍼 트레이(34)가 위치하며, 가스유입구 근처에는 가스확산판(36)들이 위치한다. 상기 웨이퍼 트레이(34) 상에 웨이퍼(38)가 놓이며, 상기 웨이퍼(38) 하단에 열전온도계(42)가 있으며, 상기 열전온도계(42) 하단에 웨이퍼의 미끄러짐을 방지하는 가이드링(40)을 더 구비하여 이루어진다.Referring to FIG. 2, there are 34 lamps 32 above and below the outside of the tube 30, and four lamps (not shown) are further installed on the side. The wafer tray 34 is positioned on the bottom surface of the tube 30, and the gas diffusion plates 36 are positioned near the gas inlet. A wafer 38 is placed on the wafer tray 34, a thermoelectric thermometer 42 is disposed at the bottom of the wafer 38, and a guide ring 40 is disposed at the bottom of the thermoelectric thermometer 42 to prevent the wafer from slipping. It is further provided with.
도3에서 보는 바와 같이, 상기 열전온도계(42)는 상기 웨이퍼(38)의 플랫존과 수평으로 1 내지 10개의 열전온도계(42)가 위치하도록 되어 있다. 바람직하기로는 웨이퍼 플랫존에서 2㎝마다 설치하거나, 10개의 열전온도계를 설치하는 것이다.As shown in FIG. 3, the thermoelectric thermometer 42 is arranged such that 1 to 10 thermoelectric thermometers 42 are positioned horizontally with the flat zone of the wafer 38. Preferably, it installs every 2 cm in a wafer flat zone, or installs ten thermoelectric thermometers.
도4를 참조하여 설명하면, 38개의 램프(32)에 의해 웨이퍼(38)로 전달된 열은 하단부에 위치한 복수개의 열전온도계(42)에 의해 각 영역의 온도차가 제어부(44)에 전달되면, 이 제어부(44)는 각 영역의 온도값을 분석하여 이를 조절하기 위한 보상제어값을 램프구동부(46)에 전달된다. 상기 램프구동부(46)는 보상제어값에 의해 램프(32)의 세기를 그룹별로 조절한다. 각 영역에 따라 온도를 보상하여 일정한 온도로 유지하여 확산공정을 수행한다.Referring to FIG. 4, when the heat transferred to the wafer 38 by the 38 lamps 32 is transferred to the controller 44 by a plurality of thermoelectric thermometers 42 positioned at the bottom thereof, the temperature difference of each region is transferred to the controller 44. The controller 44 analyzes the temperature value of each region and transmits a compensation control value to the lamp driver 46 to adjust it. The lamp driver 46 adjusts the intensity of the lamp 32 for each group by the compensation control value. The diffusion process is performed by compensating the temperature according to each region and maintaining it at a constant temperature.
전술한 바와 같이 웨이퍼의 온도가 일정하게 유지되어 웨이퍼에 증착되는 막의 두께가 균일하게 증착된다.As described above, the temperature of the wafer is kept constant so that the thickness of the film deposited on the wafer is uniformly deposited.
따라서, 본 발명에 의하면 복수개의 열전온도계에 의해 감지된 웨이퍼 하부지역의 온도에 의해 튜브 내의 온도를 균일하게 조절하여 웨이퍼에 증착되는 막의 두께를 균일하게 하여 공정불량이 감소하는 효과가 있다.Therefore, according to the present invention, the temperature in the tube is uniformly controlled by the temperature of the lower region of the wafer detected by the plurality of thermoelectric thermometers, thereby making it possible to reduce the process defects by making the thickness of the film deposited on the wafer uniform.
이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.
Claims (9)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019980036280A KR20000018617A (en) | 1998-09-03 | 1998-09-03 | Diffusion furnace processing temperature control device of diffusion installation |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019980036280A KR20000018617A (en) | 1998-09-03 | 1998-09-03 | Diffusion furnace processing temperature control device of diffusion installation |
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| KR20000018617A true KR20000018617A (en) | 2000-04-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11295952B2 (en) | 2019-06-10 | 2022-04-05 | Semes Co., Ltd. | Apparatus for treating substrate and method for treating apparatus |
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1998
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11295952B2 (en) | 2019-06-10 | 2022-04-05 | Semes Co., Ltd. | Apparatus for treating substrate and method for treating apparatus |
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