KR20000015549A - Etching apparatus for manufacturing of semiconductor devices - Google Patents

Etching apparatus for manufacturing of semiconductor devices Download PDF

Info

Publication number
KR20000015549A
KR20000015549A KR1019980035566A KR19980035566A KR20000015549A KR 20000015549 A KR20000015549 A KR 20000015549A KR 1019980035566 A KR1019980035566 A KR 1019980035566A KR 19980035566 A KR19980035566 A KR 19980035566A KR 20000015549 A KR20000015549 A KR 20000015549A
Authority
KR
South Korea
Prior art keywords
hydrofluoric acid
reaction chamber
etching apparatus
wafer
supply pipe
Prior art date
Application number
KR1019980035566A
Other languages
Korean (ko)
Inventor
정현화
Original Assignee
김영환
현대반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김영환, 현대반도체 주식회사 filed Critical 김영환
Priority to KR1019980035566A priority Critical patent/KR20000015549A/en
Publication of KR20000015549A publication Critical patent/KR20000015549A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Abstract

PURPOSE: An etching apparatus is provided to prevent a contamination of reaction chamber by using a mist of HF solution. CONSTITUTION: The etching apparatus comprises: a container(113) for mist of HF solution by bubbling of a carrier gas; a reaction chamber(101) having an exhaust pipe(103) for exhausting the vaporized HF mist; a supply pipe(115) for connecting between the HF container(113) and the reaction chamber(101); and a valve(117) for controlling a quantity of the vaporized HF mist and formed in the supply pipe(115). Thereby, it is possible to improve the stability of process and simplicity of the apparatus without additional heating and cooling devices.

Description

반도체 제조용 식각장치.Etching apparatus for semiconductor manufacturing.

본 발명은 반도체 제조용 식각장치에 관한 것으로써, 특히 케리어가스를 이용한 버블링을 통해 불산용액을 연무화시켜 반응쳄버 내의 웨이퍼 표면 산화막을 반응시켜 웨이퍼의 산화막을 제거하는 반도체 제조용 식각장치이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an etching apparatus for semiconductor manufacturing, and more particularly, to an etching apparatus for semiconductor manufacturing which removes an oxide film of a wafer by reacting a wafer surface oxide film in a reaction chamber by misting a hydrofluoric acid solution through bubbling using carrier gas.

일반적으로 웨이퍼에는 여러 종류의 박막이 형성되는데, 이러한 여러 종류의 박막 중에서 필요한 부분만 남기고 필요없는 부분의 박막을 화학적 또는 물리적 방법으로 제거를 하는 식각공정이 있다.In general, various types of thin films are formed on a wafer, and there is an etching process in which the thin portions of the various types of thin films are removed by chemical or physical methods, leaving only the necessary portions.

이러한 식각공정에는 건식각과 습식각의 두 종류가 있으며, 건식각은 반응쳄버내에 반응가스를 주입하고 고주파전력 또는 마이크로-웨이브 전력을 인가시켜 플라즈마상태를 형성하면 반응가스의 자유전자 또는 이온이 발생되어 웨이퍼를 식각하는 방법이다.There are two types of etching processes, dry etching and wet etching. In the dry etching, free electrons or ions of the reaction gas are generated when a reaction gas is injected into the reaction chamber and a high frequency power or micro-wave power is applied to form a plasma state. It is a method of etching a wafer.

습식각은 화학약품을 사용하여 식각시키고자 하는 막과 화학반응시켜 불필요한 막을 용해시키는 방법으로 불필요한 막만을 선택하여 용해시킬 수 있고,한번에 대량의 웨이퍼를 처리할 수 있으며 건식각보다는 저렴한 비용이 드는 장점이 있다.Wet etching is a method of chemically reacting with a film to be etched to dissolve the unnecessary film, so that only the unnecessary film can be selected and dissolved, and a large amount of wafers can be processed at one time and have a lower cost than dry etching. There is this.

이러한 습식각 방법을 이용한 웨이퍼의 식각장치에서 불산을 기상화시켜 산화막을 제거하는 종래의 웨이퍼 식각장치의 구성은 다음과 같다.The configuration of a conventional wafer etching apparatus for removing an oxide film by vaporizing hydrofluoric acid in the wafer etching apparatus using the wet etching method is as follows.

제 1 도는 종래의 불산을 증기화시켜 웨이퍼를 식각하는 웨이퍼 식각장치로써 크게 반응쳄버(1)와, 반응쳄버(1)에 연결된 가열파이프(13),(13')와, 냉각파이프(15),(15')로 구성된다.1 is a wafer etching apparatus for etching a wafer by vaporizing a conventional hydrofluoric acid. The reaction chamber 1, the heating pipes 13 and 13 'connected to the reaction chamber 1, and the cooling pipe 15 are shown in FIG. And (15 ').

반응쳄버(1) 내부에는 웨이퍼(7)가 안착되는 척(5)과 불산용액이 담긴 불산용액 수조(11)가 형성되고, 외부에는 일측으로 기상화된 불산증기가 배출되는 배출관(3)이 형성되고, 웨이퍼의 로딩과 언로딩이 이루어지는 출입구(9)가 형성된다.Inside the reaction chamber 1, the chuck 5 on which the wafer 7 is seated and the hydrofluoric acid solution tank 11 containing the hydrofluoric acid solution are formed, and the discharge pipe 3 through which the hydrofluoric acid vapor vaporized to one side is discharged. And an entrance 9 through which the wafer is loaded and unloaded is formed.

불산용액 수조(11)에는 가열과 냉각을 위한 가열파이프(13),(13')와 냉각파이프(15),(15')가 각각 형성되어 반응쳄버(1) 외부에서 가열매체 혹은 냉각매체가 순환되어 공급된다.In the hydrofluoric acid solution tank 11, heating pipes 13, 13 'and cooling pipes 15, 15' for heating and cooling are formed, respectively. It is circulated and supplied.

이러한 구조로 이루어진 종래의 증기화 식각장치에서 웨이퍼 표면의 산화막 제거는 다음과 같다.In the conventional vaporization etching apparatus having such a structure, the oxide film is removed from the wafer surface as follows.

먼저, 출입구(9)를 통해 웨이퍼(7)가 반응쳄버(1)내로 로딩되어 척(5)에 안착되면 가열매체가 가열파이프(13)를 통해 반응쳄버(1)내의 불산용액 수조(11)를 가열한 다음 가열파이프(13')로 빠져나간다.First, when the wafer 7 is loaded into the reaction chamber 1 through the entrance 9 and seated on the chuck 5, the heating medium is fluorinated in the reaction chamber 1 through the heating pipe 13. After heating, it exits to the heating pipe 13 '.

불산용액 수조(11)가 가열되면 수조 내의 불산용액이 가열되어 불산증기를 발생시키고 이에 따라 불산증기가 웨이퍼(7) 표면의 SiO₂가 서로 화학반응하여 SiF₄로 기상화되면서 막질이 분해된다.When the hydrofluoric acid solution tank 11 is heated, the hydrofluoric acid solution in the water tank is heated to generate hydrofluoric acid vapor. Thus, the hydrofluoric acid vaporizes SiO 2 on the surface of the wafer 7 to vaporize into SiF₄, thereby degrading the film quality.

웨이퍼(7) 표면의 산화막이 분해되면 냉각파이프(15)를 통해 유입된 냉각매체가 냉각파이프(15')로 빠져나가면서 불산용액 수조(11)를 냉각하여 불산증기의 발생을 중단시킨다.When the oxide film on the surface of the wafer 7 is decomposed, the cooling medium introduced through the cooling pipe 15 exits the cooling pipe 15 'and cools the hydrofluoric acid solution tank 11 to stop generation of hydrofluoric acid vapor.

불산증기의 발생이 중단되면 기상화된 SiF₄는 반응쳄버(1)의 일측에 형성된 배출관(3)을 통해 반응쳄버(1)외부로 배출되고, 출입문(9)를 통해 식각된 웨이퍼(7)가 반응쳄버(1) 외부로 언로딩되면 식각이 완료된다.When generation of the hydrofluoric acid vapor is stopped, the vaporized SiF 배출 is discharged out of the reaction chamber 1 through the discharge pipe 3 formed at one side of the reaction chamber 1, and the wafer 7 etched through the door 9 is removed. When unloaded outside the reaction chamber 1, etching is completed.

그러나 이러한 종래의 웨이퍼 증기화 식각장치는 식각이 진행됨에 따라 불산용액 수조내의 불산용액이 가열에 의해 증기화되는 과정에서 점차로 불산용액의 농도가 낮아지고 용액의 양이 줄어들게 되어 이를 보충하기 위해 반응쳄버를 개방한 다음 불산용액을 보충하는 과정이 빈번하게 발생된다. 이 불산용액의 보충과정에서 불산용액에 의한 반응쳄버의 오염이 발생된다.However, in the conventional wafer vaporization etching apparatus, as the etching proceeds, the concentration of the hydrofluoric acid solution gradually decreases and the amount of the solution decreases as the hydrofluoric acid solution in the hydrofluoric acid solution vaporizes by heating. The process of replenishing and then replenishing hydrofluoric acid occurs frequently. During the replenishment of the hydrofluoric acid solution, the reaction chamber is contaminated by the hydrofluoric acid solution.

또한 불산용액 수조를 가열하여 불산용액을 증기화하기 위해 별도의 가열파이프와 냉각파이프를 설치하여야 함으로써 증기화 식각장치의 구조가 복잡해지고 조작이 어려운 문제점이 있다.In addition, a separate heating pipe and a cooling pipe must be installed in order to vaporize the hydrofluoric acid solution by heating the hydrofluoric acid solution tank, which makes the structure of the vaporization etching apparatus complicated and difficult to operate.

따라서 본 발명은 종래의 이러한 문제점을 해결하기 위한 것이다.Accordingly, the present invention is to solve this problem of the prior art.

본 발명의 목적은 반도체 제조용 증기화 식각장치의 구조를 단순화하여 조작의 편이성을 증대시키고 불산용액의 보충시 발생되는 불산용액에 의한 반응쳄버의 오염을 최소화시키는 반도체 제조용 식각장치를 제공하는데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide an etching apparatus for manufacturing a semiconductor, which simplifies the structure of a vaporization etching apparatus for manufacturing a semiconductor, thereby increasing convenience of operation and minimizing contamination of the reaction chamber by the hydrofluoric acid solution generated when the hydrofluoric acid solution is replenished.

이러한 목적을 달성하고자, 본 발명은 불산을 이용한 웨이프의 식각이 이루어지는 반도체 제조용 식각장치에 있어서, 케리어가스가 공급되어 버블링에 의한 불산의 연무화가 이루어지는 불산용기와, 상기 불산용기의 불산 연무가 공급되어 웨이퍼 막질의 분해가 이루어지고, 기상화된 불산 연무를 배출하는 배출관을 가진 반응쳄버와, 상기 불산용기와 반응쳄버를 연결시키기 위한 공급파이프와, 상기 공급파이프에 형성되어 불산 연무의 공급을 제어하는 밸브로 이루어진다.In order to achieve the above object, the present invention is an etching apparatus for semiconductor manufacturing in which the wafer is etched using hydrofluoric acid, the hydrofluoric acid container in which the carrier gas is supplied to make the hydrofluoric acid fuming by bubbling, and the hydrofluoric acid mist of the hydrofluoric acid container A reaction chamber having a discharge pipe which is supplied to decompose the wafer film and discharges the vaporized hydrofluoric acid fumes, a supply pipe for connecting the hydrofluoric acid container and the reaction chamber, and a supply of hydrofluoric acid fume formed in the supply pipe It consists of a valve to control.

상기 불산용기내로 공급되는 케리어가스는 질소가스를 사용하고, 순수용기를 통과시켜 불순물을 제거하는 것이 특징이다.The carrier gas supplied into the hydrofluoric acid vessel is characterized in that it uses nitrogen gas and removes impurities through a pure vessel.

제 1 도는 종래의 반도체 제조용 식각장치에 관한 도면이고,1 is a view of a conventional etching apparatus for manufacturing a semiconductor,

제 2 도는 본 발명의 반도체 제조용 식각장치에 관한 도면이다.2 is a view of an etching apparatus for manufacturing a semiconductor of the present invention.

* 도면의 주요한 부분에 대한 간략한 부호설명 *Brief description of the major parts of the drawings

1,101 : 반응쳄버 3,103 : 배출관1,101: reaction chamber 3,103: discharge pipe

5,105 : 척 7,107 : 웨이퍼5,105: Chuck 7,107: Wafer

9,109 : 출입구9,109: Doorway

11 : 불산용액 수조 13,13': 가열파이프11: hydrofluoric acid solution tank 13,13 ': heating pipe

15,15': 냉각파이프15,15 ': cooling pipe

111 : 순수용기 113 : 불산용기111 pure water container 113 hydrofluoric acid container

115 : 공급파이프 117 : 밸브115: supply pipe 117: valve

이하, 첨부된 도면을 참조하여 본 발명을 자세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

제 1 도는 본 발명의 식각장치에 대한 구성도로써, 반응쳄버(101)와, 순수용기(111)와, 불산용기(113)와, 공급파이프(115)와, 밸브(117)로 구성되어있다.1 is a block diagram of an etching apparatus of the present invention, and includes a reaction chamber 101, a pure water container 111, a hydrofluoric acid container 113, a supply pipe 115, and a valve 117. .

반응쳄버(101)내측으로는 웨이퍼(107)가 안착되는 척(105)가 형성되고, 외측으로는 웨이퍼(107)의 입출이 이루어지는 입출구(109)와 기상화된 불산연무를 반응쳄버(101)외부로 배출하기 위한 배출관(103)이 형성된다.Inside the reaction chamber 101, a chuck 105 on which the wafer 107 is seated is formed. On the outside, the entrance chamber 109 through which the wafer 107 enters and exits and the vaporized hydrofluoric acid mist are reacted with the reaction chamber 101. Discharge pipe 103 for discharging to the outside is formed.

순수용기(111)은 일정한 양의 순수를 포함하는데, 제 1 공급파이프(115)는 케리어가스를 순수용액 내로 공급하도록 순수용액 내까지 형성되고, 제 2 공급파이프(115')는 순수용액 위로 일정간격 이격되어 위치한다.The pure water container 111 includes a certain amount of pure water, and the first supply pipe 115 is formed up to the pure solution to supply the carrier gas into the pure solution, and the second supply pipe 115 'is fixed over the pure solution. Are spaced apart.

제 2 공급파이프(115')는 일단이 순수용기(111)의 순수용액에서 일정간격 이격되어 형성되고, 타단은 불산용기(113)의 불산용액 내까지 형성되어 있다.One end of the second supply pipe 115 ′ is formed to be spaced apart from the pure solution of the pure water container 111 by a predetermined interval, and the other end is formed within the hydrofluoric acid solution of the hydrofluoric acid container 113.

불산용기(113)은 일정한 양의 불산용액을 포함하는데, 제 2 공급파이프(115')는 불산용액 내까지 형성되고 제 3 공급파이프(115")는 불산용액 위로 일정간격 이격되어 위치한다.The hydrofluoric acid container 113 includes a predetermined amount of hydrofluoric acid solution. The second supply pipe 115 'is formed up to the hydrofluoric acid solution and the third supply pipe 115 "is spaced apart from the hydrofluoric acid solution at a predetermined interval.

제 3 공급파이프(115")는 일단이 불산용액 위로 일정간격 이격되어 위치하고, 타단은 반응쳄버(101)의 상단면까지 형성되어있다.One end of the third supply pipe 115 "

밸브(117)는 케리어가스가 순수용기(111)에 공급되는 것을 제어하도록 제 1 공급파이프(115)에 형성되거나, 불산증기가 반응쳄버(101)에 공급되는 것을 제어하도록 제 3 공급파이프(115")에 형성되어도 된다.The valve 117 is formed in the first supply pipe 115 to control the carrier gas supplied to the pure water container 111 or the third supply pipe 115 to control the hydrofluoric acid vapor supplied to the reaction chamber 101. ") May be formed.

이러한 구성을 가진 본 발명의 식각장치를 통한 웨이퍼의 증기화 식각은 다음과 같다.Vaporization etching of the wafer through the etching apparatus of the present invention having such a configuration is as follows.

반응쳄버(101)의 출입구(109)를 개방하면 식각될 웨이퍼(107)가 이송되어 반응쳄버(101)의 척(105)위로 로딩된다.Opening the exit 109 of the reaction chamber 101 transfers the wafer 107 to be etched and loaded onto the chuck 105 of the reaction chamber 101.

척(105)위로 웨이퍼(107)이 로딩되면 출입구(109)를 폐쇄하고 제 1 공급파이프(115)에 형성된 밸브(117)를 개방하여 케리어가스를 순수용기(111)내로 공급한다.When the wafer 107 is loaded onto the chuck 105, the entrance 109 is closed and the valve 117 formed in the first supply pipe 115 is opened to supply the carrier gas into the pure water container 111.

이때 사용되는 케리어 가스는 질소가스를 사용하면 되고, 제 1 공급파이프(115)를 통해 공급된 케리어가스는 불순물이 제거되어 제 2 공급파이프(115')를 통해 불산용기(113)의 불산용액 내로 공급된다.In this case, the carrier gas used may be nitrogen gas, and the carrier gas supplied through the first supply pipe 115 may be freed of impurities and introduced into the hydrofluoric acid solution of the hydrofluoric acid container 113 through the second supply pipe 115 ′. Supplied.

불산용액 내로 공급된 케리어가스는 불산용액의 표면으로 이동하면서 기포를 발생시켜 불산용액을 버블링한다.The carrier gas supplied into the hydrofluoric acid solution moves to the surface of the hydrofluoric acid solution and generates bubbles to bubble the hydrofluoric acid solution.

버블링에 의해 불산용액은 불산 연무 형태로 불산용기(113)내에 형성되어 제 3 공급파이프(115")를 통해 반응쳄버(101)내로 공급되어 반응쳄버(101) 내부를 불산연무의 상태로 형성한다.By bubbling, the hydrofluoric acid solution is formed in the hydrofluoric acid container 113 in the form of hydrofluoric acid fume and supplied into the reaction chamber 101 through the third supply pipe 115 ″ to form the inside of the reaction chamber 101 in the state of hydrofluoric acid fume. do.

이러한 불산연무의 상태하에서 웨이퍼(107) 표면의 막질 SiO₂과 불산연무가 서로 반응하여 불산연무가 SiF₄로 기상화된다.Under such a state of hydrofluoric acid fume, the film quality SiO2 and hydrofluoric acid fume on the surface of the wafer 107 react with each other, and the hydrofluoric acid fume vaporizes into SiF₄.

웨이퍼(107) 표면의 막질이 제거되면 제 1 공급파이프(115)의 밸브(117)을 폐쇄하여 케리어가스의 공급을 차단하여 불산연무의 발생을 중단시킨 다음, 반응쳄버(101)의 배출관(103)을 통해 기상화된 SiF₄를 반응쳄버(101) 외부로 인출한다.When the film quality on the surface of the wafer 107 is removed, the valve 117 of the first supply pipe 115 is closed to stop the supply of carrier gas to stop the generation of hydrofluoric acid fumes, and then the discharge pipe 103 of the reaction chamber 101. SiF 기상 vaporized through) is taken out of the reaction chamber 101.

또한 밸브(117)을 제 3 공급파이프(115")에 형성하여도 불산연무가 반응쳄버(101) 내에 공급되는 것을 중단시킬 수 있다.In addition, even if the valve 117 is formed in the third supply pipe 115 ", it is possible to stop the supply of the hydrofluoric acid fume into the reaction chamber 101.

불산연무 또는 케리어가스의 공급이 중단된 상태에서 배출관(103)을 통해 기상화된 SiF₄가 모두 인출되면 반응쳄버(101)의 출입구(109)를 개방하여 웨이퍼(107)을 언로딩시킴으로써 식각공정이 모두 완료된다.If all of the vaporized SiF₄ is drawn out through the discharge pipe 103 in the state of supplying the fuming fumes or the carrier gas, the etching process is performed by opening the entrance 109 of the reaction chamber 101 and unloading the wafer 107. All done.

본 발명의 반도체 제조용 식각장치는 반응쳄버 외부에 불산용기를 형성하여 케리어가스의 버블링을 통해 불산용액을 연무화시켜 반응쳄버내로 불산연무를 공급함으로써 불산용액의 보충시에 발생되는 반응쳄버의 오염을 방지하여 증기화 식각공정의 공정안정성을 향상시키고, 별도의 가열,냉각장치가 필요없게 되어 장치의 구조가 간단해 지고 장치 조작의 용이성을 향상시키는데 그 잇점이 있다.In the etching apparatus for manufacturing a semiconductor of the present invention, a hydrofluoric acid container is formed outside the reaction chamber, the hydrofluoric acid solution is fumed through the bubbling of carrier gas, and the hydrofluoric acid is supplied into the reaction chamber, thereby contaminating the reaction chamber generated during the replenishment of the hydrofluoric acid solution. By improving the process stability of the vaporization etching process by eliminating the need for a separate heating and cooling device, the structure of the device can be simplified and the device can be easily operated.

Claims (2)

불산을 이용하여 웨이퍼의 식각이 이루어지는 반도체 제조용 식각장치에 있어서,In the etching apparatus for semiconductor manufacturing in which the wafer is etched using hydrofluoric acid, 케리어가스가 공급되어 버블링에 의한 불산의 연무화가 이루어지는 불산용기와,A hydrofluoric acid container in which carrier gas is supplied to make fuming of hydrofluoric acid by bubbling, 상기 불산용기의 불산 연무가 공급되어 웨이퍼 막질의 분해가 이루어지고, 기상화된 불산 연무를 배출하는 배출관을 가진 반응쳄버와,A reaction chamber having a discharge pipe for supplying hydrofluoric acid mist of the hydrofluoric acid container to decompose the wafer film and discharging the vaporized hydrofluoric acid mist; 상기 불산용기와 반응쳄버를 연결시키기 위한 공급파이프와,A supply pipe for connecting the hydrofluoric acid container and the reaction chamber, 상기 공급파이프에 형성되어 불산 연무의 공급을 제어하는 밸브로 이루어진 반도체 제조용 식각장치.An etching apparatus for manufacturing a semiconductor comprising a valve formed in the supply pipe to control the supply of hydrofluoric acid mist. 청구항 1에 있어서, 상기 불산용기내로 공급되는 케리어가스는 질소가스를 사용하고, 순수용기를 통과시켜 불순물을 제거하는 것이 특징인 반도체 제조용 식각장치.The etching apparatus of claim 1, wherein the carrier gas supplied into the hydrofluoric acid vessel uses nitrogen gas to remove impurities by passing through a pure vessel.
KR1019980035566A 1998-08-31 1998-08-31 Etching apparatus for manufacturing of semiconductor devices KR20000015549A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019980035566A KR20000015549A (en) 1998-08-31 1998-08-31 Etching apparatus for manufacturing of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980035566A KR20000015549A (en) 1998-08-31 1998-08-31 Etching apparatus for manufacturing of semiconductor devices

Publications (1)

Publication Number Publication Date
KR20000015549A true KR20000015549A (en) 2000-03-15

Family

ID=19548926

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980035566A KR20000015549A (en) 1998-08-31 1998-08-31 Etching apparatus for manufacturing of semiconductor devices

Country Status (1)

Country Link
KR (1) KR20000015549A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100941331B1 (en) * 2007-07-13 2010-02-11 주식회사 케이피이 Method for etching of solar cell using vapor etching and etching device for performing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100941331B1 (en) * 2007-07-13 2010-02-11 주식회사 케이피이 Method for etching of solar cell using vapor etching and etching device for performing the same

Similar Documents

Publication Publication Date Title
US6551409B1 (en) Method for removing organic contaminants from a semiconductor surface
KR910004039B1 (en) Gaseous process and apparatus for removing film from substrates
US7402523B2 (en) Etching method
US7404863B2 (en) Methods of thinning a silicon wafer using HF and ozone
US6517998B1 (en) Method for removing photoresist film and apparatus used therefor
US4749440A (en) Gaseous process and apparatus for removing films from substrates
US5378317A (en) Method for removing organic film
US5885361A (en) Cleaning of hydrogen plasma down-stream apparatus
US5336356A (en) Apparatus for treating the surface of a semiconductor substrate
US6517999B1 (en) Method of removing photoresist film
US20050215063A1 (en) System and methods for etching a silicon wafer using HF and ozone
US5571375A (en) Method of removing native oxide film from a contact hole on silicon wafer
JP2002184741A (en) Substrate treatment method and device thereof
JPH0950040A (en) Plasma etching method and production of liquid crystal display device panel
KR100869865B1 (en) Substrate processing method and substrate processing apparatus
US6277204B1 (en) Methods for cleaning wafers used in integrated circuit devices
KR20020093868A (en) Method of surface treatment of semiconductor
KR20020070820A (en) Apparatus and method for semiconductor wafer etching
US11557486B2 (en) Etching method, damage layer removal method, and storage medium
US6715944B2 (en) Apparatus for removing photoresist film
JPS61148820A (en) Processing method
KR20000015549A (en) Etching apparatus for manufacturing of semiconductor devices
JP2632293B2 (en) Selective removal method of silicon native oxide film
US10985026B2 (en) Substrate processing method, substrate processing apparatus, and substrate processing system
JP2632261B2 (en) Method for removing oxide film on substrate surface

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination