KR20000013667A - Manufacturing method for semiconductor accelation with a etching depth detecting window - Google Patents

Manufacturing method for semiconductor accelation with a etching depth detecting window Download PDF

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Publication number
KR20000013667A
KR20000013667A KR1019980032655A KR19980032655A KR20000013667A KR 20000013667 A KR20000013667 A KR 20000013667A KR 1019980032655 A KR1019980032655 A KR 1019980032655A KR 19980032655 A KR19980032655 A KR 19980032655A KR 20000013667 A KR20000013667 A KR 20000013667A
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South Korea
Prior art keywords
etching
silicon substrate
window
etching depth
manufacturing
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KR1019980032655A
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Korean (ko)
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백승호
최규리
김동진
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밍 루
주식회사 만도
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Priority to KR1019980032655A priority Critical patent/KR20000013667A/en
Publication of KR20000013667A publication Critical patent/KR20000013667A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details

Abstract

PURPOSE: This device is to provide a manufacturing method for a semiconductor acceleration sensor that confirms an etching terminal point that is etched with anisotropy solution with the naked eye. CONSTITUTION: Etch the place where a mass (20), a beam (30) and an etching depth detecting window (40) are formed, after putting a protective film on the upper and the lower surface of a silicon substrate (10). Etch the etching part of the silicon substrate (10) with anisotropy solution and then proceed the same etching process to the etching depth detecting window (40) as the etching process starts. As a little time passes, a discerning line appears in the middle of the etching-detecting window (40) when the structure of the mass (20) and the beam are formed. Thus, users can confirm the discerning line in the etching depth detecting window (40) on the silicon substrate through a reactor with the naked eye.

Description

식각깊이확인용 창을 갖는 반도체 가속도센서의 제조방법Method of manufacturing a semiconductor acceleration sensor having a window for etching depth

본 발명은 식각깊이확인용 창을 갖는 반도체 가속도센서의 제조방법에 관한 것으로, 특히 반도체 가속도센서의 제조시 실리콘 기판에 마련된 식각깊이확인용 창을 통해 식각종말점을 시각적으로 확인할 수 있도록 한 식각깊이확인용 창을 갖는 반도체 가속도센서의 제조방법에 관한 것이다.The present invention relates to a method for manufacturing a semiconductor acceleration sensor having an etching depth confirmation window, and in particular, an etching depth confirmation for visually confirming an etching end point through an etching depth confirmation window provided on a silicon substrate during fabrication of a semiconductor acceleration sensor. The present invention relates to a method for manufacturing a semiconductor acceleration sensor having a window.

일반적으로 반도체 가속도센서는 실리콘 기판상에 소정의 반도체 제조공정을 통하여 형성되는데 도 1의 평면도와 같이, 반도체 가속도센서를 지지하는 프레임(frame;1)과, 외부로부터 가해지는 가속도를 힘으로 변환하여 빔(30)에 전달시키는 매스(mass;20)와, 상기 빔(30)에 형성되어 가속도에 따라 저항값이 변화되는 압저항체(3)와, 압저항체(3) 위에 전기적 도선의 역할을 하는 금속층을 구성시켜 이루어진다.Generally, a semiconductor acceleration sensor is formed on a silicon substrate through a predetermined semiconductor manufacturing process. As shown in the plan view of FIG. 1, a frame (1) supporting a semiconductor acceleration sensor and an acceleration applied from the outside are converted into force. Mass (20) to be transmitted to the beam 30, piezo resistor (3) formed in the beam 30, the resistance value changes according to the acceleration, and serves as an electrical conductor on the piezo resistor (3) It is made by forming a metal layer.

이러한 구조를 갖는 종래의 반도체 가속도센서의 제조방법은 도 2에 도시한 제조공정에 따라 이루어진다. 즉, 도 2의 (A)에 도시한 바와 같이 실리콘 기판(10)의 상하면에 실리콘 산화막(2)을 성장시킨 후 상면에 대해 건식식각(dry etching)을 진행하고, 하면에 대해 습식식각(wet etching)을 진행하여 매스(20)와 빔(30)이 형성될 부위를 식각한다. 다시 말해 도 1에서와 같이 매스(20)의 좌우측을 지지하는 4개의 빔(30)의 상면부위는 건식식각에 의해 이루어지고, 빔(30)의 하면부위는 습식식각에 의해 이루어진다. 다음 (B)에서는 실리콘 산화막(2)의 식각된 부분에는 가속도에 의해 생긴 빔(30)의 응력에 대해 저항값이 변하는 압저항체(3)를 이온주입에 의하여 형성한다. 이후, (C)에서와 같이 도선의 역할을 하는 알루미늄(Al;4)을 압저항체(3)가 형성된 부분에 증착시킨후 (D)에서와 같이 아랫면의 실리콘을 식각시키기 전에 윗면의 알루미늄(4)이 식각용액에 의해 식각되는 것을 방지하기 위한 보호막(5)을 증착한후 식각한다. 이어, (E)에서는 RIE(Reactive Ion Etching)공정에 의해 빔(30)이 되는 부분을 제외한 부위를 상하로 관통되도록 실리콘을 식각한 뒤 (F)에서는 마지막으로 보호막(5)을 제거하여 반도체 가속도 센서의 구조를 완성하게 된다.The conventional method for manufacturing a semiconductor acceleration sensor having such a structure is made according to the manufacturing process shown in FIG. That is, as shown in FIG. 2A, after the silicon oxide film 2 is grown on the upper and lower surfaces of the silicon substrate 10, dry etching is performed on the upper surface, and wet etching is performed on the lower surface. etching) to etch the portion where the mass 20 and the beam 30 are to be formed. In other words, as shown in FIG. 1, the upper surface portions of the four beams 30 supporting the left and right sides of the mass 20 are formed by dry etching, and the lower surface portions of the beam 30 are formed by wet etching. In the next (B), a piezoresistor 3 is formed in the etched portion of the silicon oxide film 2 by ion implantation in which the resistance value changes with respect to the stress of the beam 30 caused by the acceleration. Thereafter, as shown in (C), aluminum (Al; 4) serving as a conductive wire is deposited on the portion where the piezoresistor 3 is formed, and then aluminum (4) on the upper surface is etched before etching the silicon on the lower surface as in (D). ) To be etched by the etching solution is deposited after etching the protective film (5). Subsequently, in (E), silicon is etched to penetrate up and down the portions except for the beam 30 by RIE (Reactive Ion Etching) process, and in (F), the protective film 5 is finally removed to remove the semiconductor acceleration. This completes the structure of the sensor.

도 2의 (A)에서의 습식식각공정은 마스크(mask)를 사용하여 식각부위를 지정하며, 식각용액인 담겨진 반응기에서 식각공정이 이루어진다. 반응기에서 식각되는 실리콘 기판(10)의 식각깊이는 별도의 장비 즉, 두께측정기를 사용하여 측정하게 된다. 이러한 두께측정기는 반응기에서 식각중인 실리콘 기판(10)을 꺼낸후 표면의 식각상태를 검출하여 식각깊이를 측정하여 정해진 수치만큼 식각되었는 지를 알아낼 수 있다. 그러나, 두께측정기를 사용하기 위해서는 반응기에서 실리콘기판(10)을 꺼내야 할뿐만 아니라 설정된 식각깊이에 도달시까지 측정작업을 반복적으로 실시해야 하는등의 문제점이 있었다. 특히, 적정한 제조공정조건을 산출하기 위해 시제품의 반도체 가속도센서를 제조할 경우 식각깊이를 확인하는 작업이 번거럽고 장시간이 소요되는 문제점이 있었다.In the wet etching process of FIG. 2A, an etching site is designated using a mask, and an etching process is performed in a reactor containing an etching solution. The etching depth of the silicon substrate 10 etched in the reactor is measured using a separate device, that is, a thickness meter. Such a thickness measuring device may detect the etching state of the surface after removing the silicon substrate 10 being etched from the reactor and determine the etching depth by measuring the etching depth. However, in order to use the thickness gauge, not only the silicon substrate 10 should be taken out of the reactor, but also the measurement operation must be repeatedly performed until the set etching depth is reached. In particular, when manufacturing a semiconductor accelerometer sensor of a prototype in order to calculate the proper manufacturing process conditions, there is a problem that it is cumbersome and takes a long time to check the etching depth.

본 발명은 실리콘 기판상에 반도체 가속도센서가 형성되는 부위를 제외한 소정 부위에 소정 크기의 식각깊이확인용 창을 마련하여 비등방성 식각용액으로 식각시 그 식각종말점을 시각적으로 확인할 수 있도록 한 식각깊이확인용 창을 갖는 반도체 가속도센서의 제조방법을 제공함에 있다.The present invention provides an etching depth check window of a predetermined size in a predetermined portion except for a portion where a semiconductor acceleration sensor is formed on a silicon substrate, and thus confirms the etching depth visually when etching with an anisotropic etching solution. The present invention provides a method for manufacturing a semiconductor acceleration sensor having a window.

도 1은 일반적인 반도체 가속도센서의 평면도,1 is a plan view of a general semiconductor acceleration sensor,

도 2는 종래의 기술에 따른 반도체 가속도센서의 제조방법을 나타내는 도면,2 is a view showing a method for manufacturing a semiconductor acceleration sensor according to the prior art,

도 3은 본 발명에 따른 식각확인용 창을 나타내는 도면,3 is a view showing an etching confirmation window according to the present invention,

도 4는 본 발명에 따른 식각확인용 창을 통해 식각종말점을 확인하는 동작을 나타내는 도면,4 is a view showing an operation of confirming an etch endpoint through the etching confirmation window according to the present invention,

도 5는 본 발명에 따른 식각확인용 창을 갖는 반도체 가속도센서의 제조방법을 나타내는 도면.5 is a view showing a method of manufacturing a semiconductor acceleration sensor having an etching confirmation window according to the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

10 : 실리콘기판 11 : 실리콘산화막10 silicon substrate 11: silicon oxide film

12 : 압저항체 13 : 알루미늄12: piezoresistor 13: aluminum

14 : 보호막 20 : 매스14: shield 20: mass

30 : 빔 40 : 식각깊이확인용 창30: beam 40: etch depth check window

상기와 같은 본 발명의 목적은 실리콘 기판에 형성된 매스의 유동을 상기 매스를 지지하는 빔을 통해 전달받는 압저항체의 저항값변화에 의해 외부로부터 가해지는 가속도를 감지하는 반도체 가속도센서의 제조방법에 있어서, 상기 실리콘 기판상에 상기 매스와 상기 빔 및 상기 압저항체가 형성되는 부위를 제외한 소정 부위에 비등방성 식각용액으로 상기 실리콘 기판을 식각할 식각깊이를 시각적으로 확인할 수 있는 식각확인용 창을 형성하는 단계에 의하여 달성된다.An object of the present invention as described above in the manufacturing method of the semiconductor acceleration sensor for sensing the acceleration applied from the outside by the resistance value change of the piezoresistor received through the beam for supporting the mass flow of the mass formed on the silicon substrate. And forming an etching confirmation window for visually confirming an etching depth to etch the silicon substrate with an anisotropic etching solution on a predetermined portion of the silicon substrate except for the portion where the mass, the beam, and the piezoresistor are formed. Is achieved by step.

이하, 본 발명의 바람직한 일실시예를 첨부도면을 참조하여 상세히 설명한다.Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

본 발명에 따른 식각확인용 창은 정사각형으로 형성하돼, 가로 및 세로의 크기는 식각깊이를 고려하여 설정한다. 이는 비등방성 식각용액을 사용하여 실리콘 기판을 식각하는 경우 실리콘 결정면에 따라 식각율이 달라지기 때문에 식각깊이에 따라 식각확인용 창의 크기를 결정하는데 그러한 예가 도 3에 따라 도시되어 있다.The etching confirmation window according to the present invention is formed in a square, and the size of the horizontal and vertical is set in consideration of the etching depth. When the silicon substrate is etched using the anisotropic etching solution, the etching rate varies depending on the silicon crystal plane, and thus, the size of the etching confirmation window is determined according to the etching depth.

도 3은 본 발명에 따른 식각깊이확인용 창을 나타내는 도면으로서, 도 3의 (A)에 도시한 바와 같이 식각확인용 창(40)은 가로와 세로의 폭이 동일한 정사각형으로 되어 있다. 상기 식각확인용 창(40)은 다음의 [관계식]에 따라 창의 크기를 결정한다.FIG. 3 is a view showing an etching depth confirmation window according to the present invention. As shown in FIG. 3A, the etching confirmation window 40 has a square width and width equal to each other. The etching confirmation window 40 determines the size of the window according to the following [Relational Expression].

[관계식] W = (2×t) / tan(54.74°)[Relational Expression] W = (2 × t) / tan (54.74 °)

여기서, W는 식각확인용 창의 폭이고, t는 비등방성 식각용액에 의해 식각되는 식각깊이이다. 상기 식각확인용 창(40)은 비등방성 식각용액에 의해 식각공정이 진행되는 경우 도 3의 (B)와 같이 창이 점진적으로 축소되고 종국에는 정해진 식각깊이에 도달되어 도 3의 (C)와 같이 식별선(L)이 나타나게 된다. 따라서, 사용자는 식별선(L)의 형성여부에 따라 식각종말시점을 확인 할 수 있다. 이를 도 4에 따라 구체적으로 설명하기로 한다.Here, W is the width of the etching confirmation window, t is the depth of etching etched by the anisotropic etching solution. The etching check window 40 is gradually reduced as shown in FIG. 3B when the etching process is performed by an anisotropic etching solution, and finally reaches a predetermined etching depth as shown in FIG. The identification line L will appear. Therefore, the user may check the end point of etching according to whether the identification line L is formed. This will be described in detail with reference to FIG. 4.

도 4는 본 발명에 따른 식각확인용 창을 통해 식각종말점을 확인하는 동작을 나타내는 도면이다. 먼저, 반응기(50)에 실리콘 기판(10)이 담겨지고 그 표면에 형성된 상기 식각확인용 창(40)은 식각공정이 개시되면서 식각되어 진다. 상기 반응기(50)의 하부에 위치하는 열원(52)은 상기 반응기(50)에 채워지는 비등방성 식각용액을 식각공정조건에 따라 가열한다. 상기 반응기(50)는 투명부재이고, 상기 비등성 식각용액 역시 투명하여 상기 실리콘 기판(10)에서의 식각공정을 육안으로 확인 할 수 있다. 즉, 지지대(51)에 의해 상기 반응기(50)의 내부로 위치하는 상기 실리콘 기판(10)은 설정된 식각공정조건에 따라 식각이 진행되고, 도 3에서와 같이 상기 식각깊이확인용 창(40)을 통해 식별선(L)이 표시되는 시점을 확인할 수 있게 된다.4 is a view illustrating an operation of confirming an etching end point through an etching confirmation window according to the present invention. First, the silicon substrate 10 is contained in the reactor 50 and the etching confirmation window 40 formed on the surface thereof is etched as the etching process starts. The heat source 52 located below the reactor 50 heats the anisotropic etching solution filled in the reactor 50 according to the etching process conditions. The reactor 50 is a transparent member, and the boiling solution is also transparent, so that the etching process on the silicon substrate 10 can be visually confirmed. That is, the silicon substrate 10 positioned inside the reactor 50 by the support 51 is etched according to the set etching process conditions, and the etching depth checking window 40 is shown in FIG. 3. Through this, it is possible to confirm the point in time at which the identification line L is displayed.

이하에서는 본 발명에 따른 반도체 가속도센서의 제조공정을 도 5에 따라 구체적으로 설명한다.Hereinafter, a manufacturing process of a semiconductor acceleration sensor according to the present invention will be described in detail with reference to FIG. 5.

도 5는 본 발명에 따른 식각깊이확인용 창을 갖는 반도체 가속도센서의 제조방법을 설명하기 위한 도면이다. 도 5에 도시한 바와 같이, 실리콘 기판(10)의 상면과 하면에 보호막(14)을 각각 성장시킨다. 이후, 매스(20)와 빔(30)이 형성될 부위 및 상기 식각깊이확인용 창(40)이 형성될 부위를 식각한다. 이어, 상기 실리콘 기판(10)의 식각부위를 비등성 식각용액으로 식각하게 되고, 식각공정이 개시됨에 따라 상기 식각깊이확인용 창(40)에 대해서도 동일하게 식각공정이 진행된다. 이어, 소정 시간이 경과하면 매스(20)와 빔(30)의 구조체가 형성되는 시점에서 상기 식각확인용 창(40)은 중심부에서 상기 식별선(L)이 나타나게 된다. 즉, 상기 매스(20)의 일측면이 경사지게 식각되어 상기 빔(30)이 하부까지 식각이 진행되면 상기 식각깊이확인용 창(40)에서 식별선(L)이 나타나게 된다. 따라서, 사용자는 상기 반응기(50)를 통해 실리콘 기판(10)에 마련된 상기 식각깊이확인용 창(40)에서 상기 식별선(L)이 표시됨을 육안으로 확인할 수 있다. 이와 같이, 비등방성 식각용액에 의한 식각공정이 종료된후 상기 실리콘 기판(10)의 상부를 건식식각하여 최종적으로 반도체 가속도센서의 구조체를 형성시키게 된다.5 is a view for explaining a method of manufacturing a semiconductor acceleration sensor having a window for checking the etching depth according to the present invention. As shown in FIG. 5, the protective film 14 is grown on the upper and lower surfaces of the silicon substrate 10, respectively. Thereafter, the portion where the mass 20 and the beam 30 are to be formed and the portion where the etch depth confirmation window 40 is to be formed are etched. Subsequently, the etching portion of the silicon substrate 10 is etched with the boiling solution, and as the etching process is started, the etching process is similarly performed for the etching depth check window 40. Subsequently, when a predetermined time elapses, the identification line L appears at the center of the etching confirmation window 40 at the time when the structures of the mass 20 and the beam 30 are formed. That is, when one side of the mass 20 is etched obliquely and the beam 30 is etched to the lower portion, the identification line L appears in the etching depth checking window 40. Therefore, the user may visually confirm that the identification line L is displayed in the etching depth check window 40 provided in the silicon substrate 10 through the reactor 50. As such, after the etching process by the anisotropic etching solution is completed, the upper portion of the silicon substrate 10 is dry etched to finally form the structure of the semiconductor acceleration sensor.

이상과 같이 본 발명은 반도체 가속도센서의 제조시 식각깊이확인용 창이 마련된 실리콘 기판을 반응기에 닫겨진 상태에서 비등방성 식각용액으로 습식식각을 진행하는 경우 식각깊이확인용 창에서 식별선이 형성여부에 따라 식각종말시점을 용이하게 확인할 수 있으며, 식각깊이를 확인하기 위해서 별도 장비인 두께측정기를 사용하지 않고 육안으로 간편하게 확인할 수 있는 효과가 있다.As described above, according to the present invention, when wet etching is performed with an anisotropic etching solution in a state in which a silicon substrate on which an etching depth confirmation window is provided in the manufacture of a semiconductor acceleration sensor is closed in a reactor, whether an identification line is formed in the etching depth confirmation window. Therefore, the end point of the etching can be easily confirmed, and there is an effect that can be easily checked with the naked eye without using a thickness measuring device, which is a separate equipment, to check the etching depth.

Claims (2)

실리콘 기판에 형성된 매스의 유동을 상기 매스를 지지하는 빔을 통해 전달받는 압저항체의 저항값변화에 의해 외부로부터 가해지는 가속도를 감지하는 반도체 가속도센서의 제조방법에 있어서,In the manufacturing method of the semiconductor acceleration sensor for sensing the acceleration applied from the outside by the resistance value change of the piezoresistor received through the beam for supporting the mass flow of the mass formed on the silicon substrate, 상기 실리콘 기판상에 상기 매스와 상기 빔 및 상기 압저항체가 형성되는 부위를 제외한 소정 부위에 비등방성 식각용액으로 상기 실리콘 기판을 식각할 식각깊이를 시각적으로 확인할 수 있는 식각확인용 창을 형성하는 단계를 포함하는 것을 특징으로 하는 식각깊이확인용 창을 갖는 반도체 가속도센서의 제조방법.Forming an etching confirmation window for visually confirming an etching depth for etching the silicon substrate with an anisotropic etching solution on a predetermined portion of the silicon substrate except for the portion where the mass, the beam and the piezoresistor are formed; Method of manufacturing a semiconductor acceleration sensor having a window for etching depth confirmation, comprising a. 제 1항에 있어서, 상기 식각깊이확인용 창은 다음의 관계식에 따라 창의 크기를 결정하는 것을 특징으로 하는 식각확인용 창을 갖는 반도체 가속센서의 제조방법.The method of claim 1, wherein the etching depth checking window determines the size of the window according to the following relational expression. [관계식] W = (2×t) / tan(54.74°)[Relational Expression] W = (2 × t) / tan (54.74 °) 여기서, W는 식각확인용 창의 폭,Where W is the width of the etching confirmation window, t는 비등방성 식각용액에 의해 식각되는 식각깊이.t is the etching depth etched by the anisotropic etching solution.
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Publication number Priority date Publication date Assignee Title
KR20150088604A (en) 2014-01-24 2015-08-03 엘지전자 주식회사 Method for fabrication of micro oscillating devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150088604A (en) 2014-01-24 2015-08-03 엘지전자 주식회사 Method for fabrication of micro oscillating devices

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