KR20000004421A - Thin film transistor liquid crystal display - Google Patents

Thin film transistor liquid crystal display Download PDF

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KR20000004421A
KR20000004421A KR1019980025853A KR19980025853A KR20000004421A KR 20000004421 A KR20000004421 A KR 20000004421A KR 1019980025853 A KR1019980025853 A KR 1019980025853A KR 19980025853 A KR19980025853 A KR 19980025853A KR 20000004421 A KR20000004421 A KR 20000004421A
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bus line
gate
gate bus
electrodes
liquid crystal
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KR1019980025853A
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KR100336885B1 (en
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최교운
정태보
신섭
임호남
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김영환
현대전자산업 주식회사
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1288Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/6675Amorphous silicon or polysilicon transistors
    • H01L29/66765Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE: A thin film transistor liquid crystal display is provided, which can basically prevent a Shot Mura. CONSTITUTION: A thin film transistor liquid crystal display comprises: a gate bus line (12) and a data bus line (14) to be vertically and crossly formed on a glass substrate; a first and second gate electrodes (13a, 13b) to be installed in the gate bus line (12) adjacent to a cross portion of the data bus line (14) and to be installed at a certain distance with the small width than the width of the gate bus line (12); a drain electrode (16) outputted from the data bus line (14) to be overlapped with a certain portion of the first and second gate electrodes (13a, 13b); a first and second source electrodes (15a, 15b) to be overlapped with a certain portion of the first and second gate electrodes (13a, 13b); and a pixel electrode (18) to be symmetrically formed centering around the gate bus line (12), overlapped with the gate bus line (12), and contacted with the first and second source electrodes (15a, 15b). Therefore, since the Shot Mura can to be basically prevented, the picture of the TFT LCD can to be increased.

Description

박막 트랜지스터 액정표시소자Thin film transistor liquid crystal display device

본 발명은 박막 트랜지스터 액정표시소자에 관한 것으로, 보다 상세하게는, 샷 뮤라(Shot Mura) 현상을 방지할 수 있는 박막 트랜지스터 액정표시소자에 관한 것이다.The present invention relates to a thin film transistor liquid crystal display device, and more particularly, to a thin film transistor liquid crystal display device capable of preventing shot muura.

일반적으로, 액정표시소자(Liquid Crystal Display : 이하, LCD)는 텔레비젼 및 그래픽 디스플레이 등의 표시장치에 이용된다.In general, liquid crystal displays (hereinafter, LCDs) are used in display devices such as televisions and graphic displays.

특히, 매트릭스 형태로 배열된 각 화소마다 박막 트랜지스터(Thin Film Transistor : 이하, TFT)와 같은 스위칭 소자가 배열된 TFT LCD는 고속 응답 특성을 갖음과 아울러 고화소수에 적합하기 때문에 CRT(Cathode Ray Tube)에 필적할만한 화면의 고화질화 및 컬러화 등을 실현하는데 크게 기여하고 있다.In particular, TFT LCDs in which switching elements such as thin film transistors (TFTs) are arranged for each pixel arranged in a matrix form have high-speed response characteristics and are suitable for high pixel number, so that they are suitable for high pixel count. It is greatly contributing to the realization of screen quality and colorization comparable to this.

도 1은 종래 TFT LCD의 하부기판을 개략적으로 도시한 평면도로서, 도시된 바와 같이, 유리기판(1) 상에 게이트 버스 라인들(2) 및 데이터 버스 라인들(4)이 수직·교차하도록 형성되어 있으며, 상기 게이트 버스 라인(2)과 데이터 버스 라인(4)의 교차부에는 TFT(10)가 형성되어 있다. 그리고, 게이트 버스 라인(2) 및 데이터 버스 라인(4)에 의해 한정된 단위 픽셀(Pixel)에는 ITO 금속으로된 화소전극(6)이 형성되어 있다.FIG. 1 is a plan view schematically illustrating a lower substrate of a conventional TFT LCD, and as illustrated, the gate bus lines 2 and the data bus lines 4 are vertically intersected on the glass substrate 1. The TFT 10 is formed at the intersection of the gate bus line 2 and the data bus line 4. A pixel electrode 6 made of ITO metal is formed in the unit pixel Pixel defined by the gate bus line 2 and the data bus line 4.

이때, 도시되지는 않았지만, 게이트 버스 라인들(2) 사이에는 보조용량 버스 라인이 형성되며, 아울러, 게이트 버스 라인들(2) 및 보조용량 버스 라인이 형성된 유리기판(1)은 게이트 절연막에 의해 피복된다.At this time, although not shown, the storage capacitor bus line is formed between the gate bus lines 2, and the glass substrate 1 on which the gate bus lines 2 and the storage capacitor bus line are formed is formed by a gate insulating film. Is covered.

또한, TFT(10)는 게이트 버스 라인(2)의 일부분인 게이트 전극(2a)과, 그 상부에 형성된 반도체층(3), 및 상기 데이터 버스 라인의 형성시에 함께 형성되어 상기 반도체층(3)의 일측면 및 타측면과 소정 부분 오버랩되게 배치되는 소오스/드레인 전극(4a, 4b)으로 구성되며, 이때, 드레인 전극(4b)은 화소전극(6)과 콘택된다.Further, the TFT 10 is formed together with the gate electrode 2a which is a part of the gate bus line 2, the semiconductor layer 3 formed thereon, and the data bus line at the time of formation of the semiconductor layer 3 The source / drain electrodes 4a and 4b are disposed to overlap one side and the other side of the N-side with a predetermined portion, and the drain electrode 4b is in contact with the pixel electrode 6.

한편, 상기한 TFT LCD에서 게이트 버스 라인, 데이터 버스 라인 및 그 밖의 패턴들은 통상 6인치 포토 마스크를 기본으로 구성하는 스텝핑(Stepping) 방식의 포토 장비를 이용한 노광 공정을 통해 형성하게 된다.On the other hand, the gate bus line, data bus line and other patterns in the TFT LCD are formed through an exposure process using a stepping type photo equipment, which is generally composed of a 6-inch photo mask.

그런데, 상기한 노광 공정에서 사용되는 마스크는 그 사이즈가 기판 면적에 비하여 상당히 작기 때문에, 셀 어레이 영역에 어느 한 종류의 패턴을 형성하기 위해서는 셀 어레이 영역을 소정 등분하여 분할 노광을 실시하여야 한다.However, since the mask used in the above exposure process is considerably smaller in size than the substrate area, in order to form any kind of pattern in the cell array region, it is necessary to divide the cell array region into predetermined portions and perform partial exposure.

즉, 도 2에 도시된 바와 같이, 게이트 버스 라인을 형성할 경우에 액정표시장치의 셀 어레이 영역을, 예를 들어, 6개의 공간으로 나눈다음, 게이트 버스 라인을 형성하기 위한 마스크(도시안됨)를 a1 영역에 얹은후 노광을 실시하고, 이 마스크를 a2, a3, a4, a5, a6 영역으로 순차적으로 옮겨 가며 노광 공정을 실시한다.That is, as shown in FIG. 2, when forming a gate bus line, the cell array area of the liquid crystal display is divided into, for example, six spaces, and then a mask for forming the gate bus line (not shown). Is placed on the a1 area and then exposed, and the mask is sequentially moved to the a2, a3, a4, a5 and a6 areas to perform the exposure process.

이때, a1∼a6 영역 각각을 하나의 샷(Shot)이라 한다.At this time, each of the a1 to a6 regions is called one shot.

그러나, 상기와 같이 어느 한 종류의 패턴을 형성하기 위하여 a1 영역을 노광한 후, 순차적으로 다른 영역들을 노광하는 분할 노광 방법은, 마스크의 오정렬에 기인하여 도 3a 및 도 3b에 도시된 바와 같이, 반도체층(3)을 사이에 두고 게이트 전극과 소오스(4a)간의 오버랩 정도가 각 샷들마다 서로 다르게 될 수 있으며, 이는 하기의 식 1에 나타낸 바와 같이, Cgs값이 단위 픽셀의 전압 강하(ΔVp)에 영향을 미치는 것에 기인하여 각 샷들간의 휘도 불균일을 초래하게 되며, 이러한 휘도 불균일은 TFT LCD의 화질을 저하시키는 현상, 즉, 화면 상에 검은색 선이 보여지는 샷 뮤라(Shot Mura) 현상을 발생시키게 문제점이 있었다.However, in the divided exposure method of exposing the a1 region and then sequentially exposing other regions to form any one kind of pattern as described above, as shown in FIGS. 3A and 3B due to misalignment of the mask, The overlapping degree between the gate electrode and the source 4a may be different for each shot with the semiconductor layer 3 interposed therebetween. The unevenness of brightness between the shots is caused by the influence on the screen, and this unevenness of brightness reduces the image quality of the TFT LCD, that is, the shot muura phenomenon in which black lines appear on the screen. There was a problem to generate.

------- (식 1) ------- (Equation 1)

ΔVp : 단위 픽셀의 전압 강하ΔVp: Voltage drop across unit pixels

Cgs : 게이트 전극과 소오스 전극간의 기생용량Cgs: parasitic capacitance between gate electrode and source electrode

Clc : 단위 픽셀에서의 액정의 용량Clc: liquid crystal capacity in unit pixels

Cst : 단위 픽셀에서의 보조용량Cst: subcapacity in unit pixels

Vgh : 게이트 온(On)일 때의 전압Vgh: Voltage at Gate On

Vgl : 게이트 오프(Off)일 때의 전압Vgl: Voltage at Gate Off

한편, 상기한 샷 뮤라를 방지하기 위하여, 종래에는 샷들간의 경계면(A)이 불규칙한 톱니 형상을 갖도록 하는 소우 패턴(Saw Pattern) 기술이 실시되고 있으나, 이는 시각적 눈속임일 뿐, 샷 뮤라에 대한 근본적인 해결 방안이 되지 못하고 있다.Meanwhile, in order to prevent the shot muura, a saw pattern technique is conventionally implemented such that the boundary surface A between shots has an irregular sawtooth shape. There is no solution.

따라서, 본 발명의 목적은 샷 뮤라를 근본적으로 해결할 수 있는 TFT LCD 구조를 제공하는 것이다.Therefore, it is an object of the present invention to provide a TFT LCD structure that can fundamentally solve shot muura.

도 1은 종래 박막 트랜지스터 액정표시소자의 하부기판을 개략적으로 도시한 평면도.1 is a plan view schematically illustrating a lower substrate of a conventional thin film transistor liquid crystal display device;

도 2는 종래 셀 어레이 영역에 대한 노광 방법을 설명하기 위한 도면.2 is a view for explaining an exposure method for a conventional cell array region.

도 3a 및 도 3b는 종래 박막 트랜지스터 액정표시소자의 문제점을 설명하기 위한 도면.3A and 3B illustrate a problem of a conventional thin film transistor liquid crystal display device;

도 4는 본 발명의 실시예에 따른 박막 트랜지스터 액정표시소자를 도시한 평면도.4 is a plan view illustrating a thin film transistor liquid crystal display device according to an exemplary embodiment of the present invention.

도 5 및 도6은 본 발명의 실시예에 따른 보조용량 전극 라인이 구비된 박막 트랜지스터 액정표시소자를 도시한 평면도.5 and 6 are plan views illustrating a thin film transistor liquid crystal display device having a storage capacitor electrode line according to an exemplary embodiment of the present invention.

(도면의 주요 부분에 대한 부호의 설명)(Explanation of symbols for the main parts of the drawing)

12 : 게이트 버스 라인 13a : 제1게이트 전극12: gate bus line 13a: first gate electrode

13b : 제2게이트 전극 14 : 데이터 버스 라인13b: second gate electrode 14: data bus line

15a : 제1소오스 전극 15b : 제2소오스 전극15a: first source electrode 15b: second source electrode

16 : 드레인 전극 20 : 보조용량 전극 라인16 drain electrode 20 auxiliary capacitor electrode line

20a,20b : 박막 트랜지스터20a, 20b: thin film transistor

상기와 같은 목적을 달성하기 위한 본 발명의 TFT LCD는, 유리기판; 상기 유리기판 상에 수직·교차하도록 배치된 게이트 버스 라인 및 데이터 버스 라인; 상기 데이터 버스 라인과의 교차부에 인접된 게이트 버스 라인 내부에 배치되며, 상기 게이트 버스 라인의 폭 보다는 작은 폭으로 소정 간격 이격되게 배치된 제1 및 제2게이트 전극들; 상기 데이터 버스 라인으로부터 인출되어 상기 제1 및 제2게이트 전극들의 대향면 각각과 소정 면적이 오버랩되게 배치된 드레인 전극; 상기 제1 및 제2게이트 전극들의 비대향면들 각각과 소정 면적이 오버랩되게 배치된 제1 및 제2소오스 전극; 및 상기 게이트 버스 라인을 중심으로 대칭되게 형성됨과 동시에 상기 게이트 버스 라인과 일부분이 오버랩되는 “ㄷ”형상이며, 상기 제1 및 제2소오스 전극들과 콘택되는 화소 전극을 포함하는 것을 특징으로 한다.TFT LCD of the present invention for achieving the above object, a glass substrate; A gate bus line and a data bus line arranged vertically and crosswise on the glass substrate; First and second gate electrodes disposed in the gate bus line adjacent to the intersection with the data bus line and disposed to be spaced apart from each other by a predetermined width less than the width of the gate bus line; A drain electrode drawn from the data bus line and disposed such that a predetermined area overlaps each of the opposing surfaces of the first and second gate electrodes; First and second source electrodes disposed to overlap a predetermined area with each of the non-facing surfaces of the first and second gate electrodes; And a pixel electrode formed symmetrically about the gate bus line and overlapping with the gate bus line and partially contacting the gate bus line and contacting the first and second source electrodes.

본 발명에 따르면, 마스크의 오정렬이 발생되더라도 전체적인 Cgs 값의 변동은 발생되지 않기 때문에 Cgs의 변동이 근본적인 원인으로 작용하는 샷 뮤라를 방지할 수 있다.According to the present invention, even if the misalignment of the mask occurs, the overall fluctuation of the Cgs value does not occur, so that the shot mula that the fluctuation of the Cgs is a fundamental cause can be prevented.

이하, 첨부된 도면에 의거하여 본 발명의 바람직한 실시예를 보다 상세하게 설명하도록 한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 4는 본 발명의 실시예에 따른 TFT LCD를 설명하기 위한 평면도이다. 도시된 바와 같이, 유리기판(도시안됨) 상에 게이트 버스 라인(12) 및 데이터 버스 라인(14)이 수직·교차하도록 형성되며, 상기 게이트 버스 라인(12)과 데이터 버스 라인(14)의 교차부에 인접된 부분에는 TFT(20)가 형성된다.4 is a plan view illustrating a TFT LCD according to an embodiment of the present invention. As shown, a gate bus line 12 and a data bus line 14 are vertically intersected on a glass substrate (not shown), and the gate bus line 12 intersects the data bus line 14. The TFT 20 is formed in the portion adjacent to the portion.

여기서, 단위 픽셀(Sub Pixel)은 한 쌍의 데이터 라인들(14) 사이 및 하나의 게이트 버스 라인(14)을 중심으로 그 양측 소정 면적에 걸친 영역이 되며, 이러한 단위 픽셀에는 두 개의 TFT(20a, 20b)가 형성된다.Here, a sub pixel is an area that extends between a pair of data lines 14 and a predetermined area on both sides of a gate bus line 14, and includes two TFTs 20a in the unit pixel. 20b) is formed.

자세하게, 데이터 버스 라인(14)과의 교차부에 인접된 게이트 버스 라인(12) 부분에는 두 개의 게이트 전극들(13a, 13b)이 배치되며, 이때, 게이트 전극들(13a, 13b)은 상기 게이트 버스 라인(12) 보다는 작은 폭을 갖음과 동시에 상기 게이트 버스 라인의 길이 방향으로 소정 간격 이격되게 구비되며, 상기 데이터 버스 라인(14)으로부터 인출된 드레인 전극(16)은 상기 제1 및 제2게이트 전극들(13a, 13b)의 대향면들과 소정 면적이 오버랩되게 배치되고, 상기 제1 및 제2게이트 전극들(13a, 13b)의 비대향면들 각각에는 독립적인 패턴의 형태로 그들 각각과 소정 면적이 오버랩되는 제1 및 제2소오스 전극들(15a, 15b)이 형성된다.In detail, two gate electrodes 13a and 13b are disposed at a portion of the gate bus line 12 adjacent to the intersection with the data bus line 14, and at this time, the gate electrodes 13a and 13b are disposed at the gate. It has a width smaller than that of the bus line 12 and is spaced apart by a predetermined interval in the longitudinal direction of the gate bus line, and the drain electrode 16 withdrawn from the data bus line 14 has the first and second gates. Each of the non-facing surfaces of the first and second gate electrodes 13a and 13b is disposed to overlap the opposite surfaces of the electrodes 13a and 13b, and each of them in the form of an independent pattern. First and second source electrodes 15a and 15b having a predetermined area overlap are formed.

이에 따라, 게이트 버스 라인(12)과 데이터 버스 라인(14)의 교차부에 인접된 부분에는 두 개의 TFT(20a, 20b)가 형성된다.Accordingly, two TFTs 20a and 20b are formed in a portion adjacent to the intersection of the gate bus line 12 and the data bus line 14.

계속해서, 단위 픽셀에는 게이트 버스 라인(12)의 소정 부분, 예를 들어, TFT(20a, 20b)가 형성되지 않은 부분과 오버랩됨과 동시에 제1 및 제2소오스 전극들(15a, 15b)과 각각 콘택되는 “ㄷ” 형상의 화소 전극(18)이 형성된다.Subsequently, the unit pixel overlaps a predetermined portion of the gate bus line 12, for example, a portion where the TFTs 20a and 20b are not formed, and simultaneously with the first and second source electrodes 15a and 15b, respectively. A “c” shaped pixel electrode 18 is formed.

한편, 도시되지는 않았지만, 게이트 버스 라인(12)과 제1 및 제2 게이트 전극들(13a, 13b)이 형성된 유리기판 전면에는 게이트 절연막이 도포되어 있으며, 상기 제1 및 제2게이트 전극들(13a, 13b) 상부의 게이트 절연막 상에는 상기 게이트 전극(13a, 13b)과 유사한 크기 및 형태로된 반도체층이 각각 형성되어 있고, 상기 반도체층의 일측 및 타측 상에는 소오스 전극(15a, 15b) 및 드레인 전극(16)과의 콘택을 위한 오믹 콘택층이 형성되어 있다.Although not shown, a gate insulating film is coated on the entire surface of the glass substrate on which the gate bus line 12 and the first and second gate electrodes 13a and 13b are formed, and the first and second gate electrodes ( A semiconductor layer having a size and shape similar to those of the gate electrodes 13a and 13b is formed on the gate insulating layer on the upper portion 13a and 13b, respectively, and the source and drain electrodes 15a and 15b and the drain electrode are formed on one side and the other side of the semiconductor layer. An ohmic contact layer for contact with (16) is formed.

상기와 같은 구조를 갖는 본 발명의 TFT LCD에서는 분할 노광에 의해 패턴의 불일치, 즉, 마스크의 오정렬에 기인하여 제1게이트 전극(13a)과 제1소오스 전극(15a)간의 기생용량과, 제2게이트 전극(13b)과 제2소오스 전극(15b)간의 기생용량이 각각 변동될지라도 전체적인 기생용량은 변동되지 않는다.In the TFT LCD of the present invention having the structure as described above, the parasitic capacitance between the first gate electrode 13a and the first source electrode 15a and the second due to mismatch of the pattern due to divided exposure, that is, misalignment of the mask, Although the parasitic capacitances between the gate electrode 13b and the second source electrode 15b are varied, the overall parasitic capacitance does not change.

즉, 두 개의 TFT들(20a, 20b) 각각은 소오스 전극과 드레인 전극이 서로 반대되는 위치 구성을 갖고 있기 때문에 마스크의 오정렬에 의하여 제1게이트 전극(13a)과 제1소오스 전극(15a)간의 오버랩 정도가 감소되는 경우에는 제2게이트 전극(13b)과 제2소오스 전극(15b)간의 오버랩 정도가 증가하게 되고, 반대로, 제1게이트 전극(13a)과 제1소오스 전극(15a)간의 오버랩 정도가 증가되는 경우에는 제2게이트 전극(13b)과 제2소오스 전극(15b)간의 오버랩 정도가 감소하게 된다.That is, since each of the two TFTs 20a and 20b has a configuration in which source and drain electrodes are opposite to each other, overlap between the first gate electrode 13a and the first source electrode 15a due to misalignment of a mask. When the degree is reduced, the degree of overlap between the second gate electrode 13b and the second source electrode 15b increases, and conversely, the degree of overlap between the first gate electrode 13a and the first source electrode 15a is increased. When it is increased, the degree of overlap between the second gate electrode 13b and the second source electrode 15b is reduced.

따라서, 어느 경우에 있어서도 전체적인 Cgs의 값은 항상 일정하게 유지시킬 수 있게 되기 때문에, 샷 뮤라의 원인으로 작용하는 Cgs 값의 변동을 근본적으로 방지할 수 있게 된다.Therefore, in any case, since the value of the overall Cgs can be kept constant at all times, it is possible to fundamentally prevent the fluctuation of the Cgs value acting as a cause of the shot mura.

한편, TFT LCD의 화면품위를 향상시키기 위하여 보조용량 전극 라인(20)을 구비시킬 경우에는, 도 5에 도시된 바와 같이, 화소전극(18)의 일측 가장자리면과 오버랩되도록 구비시키거나, 또는, 도 6에 도시된 바와 같이, 인접된 두 개의 화소전극(18)들 사이에 구비시킨다.On the other hand, when the auxiliary capacitance electrode line 20 is provided in order to improve the screen quality of the TFT LCD, as shown in FIG. 5, or provided so as to overlap one edge surface of the pixel electrode 18, or As shown in FIG. 6, a gap is provided between two adjacent pixel electrodes 18.

이에 따라, 단위 픽셀은 보조용량 전극 라인들(20)에 의해 구획된다.Accordingly, the unit pixel is partitioned by the storage capacitor electrode lines 20.

이상에서와 같이, 본 발명은 단위 픽셀내에 두 개의 TFT를 구비시키되, 소오스 전극과 드레인 전극이 각각의 TFT에서 서로 반대되는 위치에 배치되도록 함으로써, 마스크의 오정렬에 의해 게이트 전극과 소오스 전극간의 오버랩 정도가 각각의 TFT에서 변동될지라도 전체적인 Cgs 값은 일정하게 유지시킬 수 있으며, 이에 따라, 샷 뮤라 현상을 근본적으로 방지할 수 있기 때문에 TFT LCD의 화면 품위를 향상시킬 수 있다.As described above, in the present invention, two TFTs are provided in a unit pixel, and the source electrode and the drain electrode are disposed at positions opposite to each other in the respective TFTs. Even if is fluctuated in each TFT, the overall Cgs value can be kept constant, thereby improving the screen quality of the TFT LCD since it is possible to fundamentally prevent the shot mu phenomenon.

한편, 여기에서는 본 발명의 특정 실시예에 대하여 설명하고 도시하였지만, 당업자에 의하여 이에 대한 수정과 변형을 할 수 있다. 따라서, 이하, 특허청구의 범위는 본 발명의 진정한 사상과 범위에 속하는 한 모든 수정과 변형을 포함하는 것으로 이해할 수 있다.Meanwhile, although specific embodiments of the present invention have been described and illustrated, modifications and variations can be made by those skilled in the art. Accordingly, the following claims are to be understood as including all modifications and variations as long as they fall within the true spirit and scope of the present invention.

Claims (1)

유리기판;Glass substrates; 상기 유리기판 상에 수직·교차하도록 배치된 게이트 버스 라인 및 데이터 버스 라인;A gate bus line and a data bus line arranged vertically and crosswise on the glass substrate; 상기 데이터 버스 라인과의 교차부에 인접된 게이트 버스 라인 내부에 배치되며, 상기 게이트 버스 라인의 폭 보다는 작은 폭으로 소정 간격 이격되게 배치된 제1 및 제2게이트 전극들;First and second gate electrodes disposed in the gate bus line adjacent to the intersection with the data bus line and disposed to be spaced apart from each other by a predetermined width less than the width of the gate bus line; 상기 데이터 버스 라인으로부터 인출되어 상기 제1 및 제2게이트 전극들의 대향면 각각과 소정 면적이 오버랩되게 배치된 드레인 전극;A drain electrode drawn from the data bus line and disposed such that a predetermined area overlaps each of the opposing surfaces of the first and second gate electrodes; 상기 제1 및 제2게이트 전극들의 비대향면들 각각과 소정 면적이 오버랩되게 배치된 제1 및 제2소오스 전극; 및First and second source electrodes disposed to overlap a predetermined area with each of the non-facing surfaces of the first and second gate electrodes; And 상기 게이트 버스 라인을 중심으로 대칭되게 형성됨과 동시에 상기 게이트 버스 라인과 일부분이 오버랩되는 “ㄷ”형상이며, 상기 제1 및 제2소오스 전극들과 콘택되는 화소 전극을 포함하는 것을 특징으로 하는 박막 트랜지스터 액정표시소자.And a pixel electrode formed symmetrically about the gate bus line and overlapping the gate bus line with a portion of the gate bus line, the pixel electrode being in contact with the first and second source electrodes. Liquid crystal display device.
KR10-1998-0025853A 1998-06-30 1998-06-30 Thin Film Transistor Liquid Crystal Display Device KR100336885B1 (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040013495A (en) * 2002-08-07 2004-02-14 비오이 하이디스 테크놀로지 주식회사 Vertical alingment liquid crystal display of symmetric type to all sides
KR100539833B1 (en) * 2002-10-21 2005-12-28 엘지.필립스 엘시디 주식회사 array circuit board of LCD and fabrication method of thereof
KR100910554B1 (en) * 2002-07-12 2009-08-03 삼성전자주식회사 A thin film transistor array panel and a liquid crystal display including the panel
CN115023648A (en) * 2020-10-23 2022-09-06 京东方科技集团股份有限公司 Display electrode, display substrate, and display device

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JPS6269684A (en) * 1985-09-24 1987-03-30 Matsushita Electronics Corp Semiconductor integrated circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100910554B1 (en) * 2002-07-12 2009-08-03 삼성전자주식회사 A thin film transistor array panel and a liquid crystal display including the panel
KR20040013495A (en) * 2002-08-07 2004-02-14 비오이 하이디스 테크놀로지 주식회사 Vertical alingment liquid crystal display of symmetric type to all sides
KR100539833B1 (en) * 2002-10-21 2005-12-28 엘지.필립스 엘시디 주식회사 array circuit board of LCD and fabrication method of thereof
US7196761B2 (en) 2002-10-21 2007-03-27 Lg.Philips Lcd Co., Ltd. LCD array substrate and fabrication method thereof
US7649584B2 (en) 2002-10-21 2010-01-19 Lg Display Co., Ltd. LCD array substrate and fabrication method thereof
CN115023648A (en) * 2020-10-23 2022-09-06 京东方科技集团股份有限公司 Display electrode, display substrate, and display device
CN115023648B (en) * 2020-10-23 2023-09-29 京东方科技集团股份有限公司 Display electrode, display substrate, and display device

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