KR20000001610A - Morphology and reflecting typed liquid crystal dispaly device forming method - Google Patents

Morphology and reflecting typed liquid crystal dispaly device forming method Download PDF

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Publication number
KR20000001610A
KR20000001610A KR1019980021951A KR19980021951A KR20000001610A KR 20000001610 A KR20000001610 A KR 20000001610A KR 1019980021951 A KR1019980021951 A KR 1019980021951A KR 19980021951 A KR19980021951 A KR 19980021951A KR 20000001610 A KR20000001610 A KR 20000001610A
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South Korea
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lower substrate
liquid crystal
target
morphology
forming
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KR1019980021951A
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Korean (ko)
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KR100500683B1 (en
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하평수
김철하
박장식
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김영환
현대전자산업 주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Abstract

PURPOSE: A reflecting type liquid crystal display device forming method is provided to give a morphology onto the picture electrode by a simple process. CONSTITUTION: The reflecting type liquid crystal display device manufacture method comprises the steps of: forming a thin film transistor(12) including a gate insulating film on the lower substrate(11); coating an organic insulating film on the lower substrate formed with the thin film transistor; forming a contact hole(15) by removing a certain part of the organic insulating film; installing a target for a picture electrode on the upper part of the results of the lower substrate and intervening more than one sheave on the target and the lower substrate; forming the picture electrode on the organic insulating film of the lower substrate by transcribing the target through the sheave.

Description

모폴로지 형성방법 및 이를 이용한 반사형 액정 표시 장치의 형성방법.A morphology forming method and a method of forming a reflective liquid crystal display device using the same.

본 발명은 반사형 액정 표시 장치에 관한 것으로, 보다 구체적으로는 반사형 액정 표시 장치에서 반사면 표면에 모폴로지를 형성하는 방법 및 이를 이용한 반사형 액정 표시 장치의 형성방법에 관한 것이다.The present invention relates to a reflective liquid crystal display device, and more particularly, to a method of forming a morphology on the surface of a reflective surface in a reflective liquid crystal display device and a method of forming a reflective liquid crystal display device using the same.

일반적으로 반사형 LCD는 별도의 광원이 요구되지 않고, 자연광을 이용한다.In general, the reflective LCD does not require a separate light source, and uses natural light.

이러한 반사형 LCD는 상부 기판으로부터 자연광이 입사되면, 화소 전극을 통하여, 다시 빛이 반사되어지는데, 이때, 액정 분자들의 배열 상태에 따라서, 빛이 흡수되거나, 통과된다.In the reflective LCD, when natural light is incident from the upper substrate, light is reflected again through the pixel electrode. At this time, light is absorbed or passed depending on the arrangement state of the liquid crystal molecules.

종래의 반사형 액정 표시 장치는 도 1a에 도시된 바와 같이, 하부 기판(1,5)이 서로 대향되도록 배치되어 있다. 하부 기판(1) 상부의 적소에는 공지의 기술로 형성된 박막 트랜지스터(TFT)가 구비되고, 박막 트랜지스터(TFT)가 구비된 하부 기판(1)상에 유기 절연막(2)이 형성된다. 유기 절연막(2)에는 박막 트랜지스터(TFT)의 소정 부분 즉, 드레인 전극을 노출시키기 위하여, 콘택홀이 형성되고, 콘택홀을 통하여, 노출된 박막 트랜지스터(TFT)와 콘택되도록 유기 절연막(2) 상부에 화소 전극(3)이 형성된다.In the conventional reflective liquid crystal display, as shown in FIG. 1A, the lower substrates 1 and 5 are disposed to face each other. The thin film transistor TFT formed by a well-known technique is provided in the upper part of the lower substrate 1, and the organic insulating film 2 is formed on the lower substrate 1 provided with the thin film transistor TFT. In the organic insulating layer 2, a contact hole is formed in order to expose a predetermined portion of the thin film transistor TFT, that is, a drain electrode, and the upper portion of the organic insulating layer 2 so as to contact the exposed thin film transistor TFT through the contact hole. The pixel electrode 3 is formed.

이때, 반사형 액정 표시 장치에서 화소 전극(3)은 계면 반사 특성이 우수한 알루미늄 금속막이 이용된다. 화소 전극(3)을 불투명한 금속막으로 형성하여도, 반사의 역할만 하므로, 액정 표시 장치의 개구율과는 상관없다.In this case, in the reflective liquid crystal display, the pixel electrode 3 is made of an aluminum metal film having excellent interface reflection characteristics. Even if the pixel electrode 3 is formed of an opaque metal film, it only serves as a reflection, and thus has no relation to the aperture ratio of the liquid crystal display.

상부 기판(5)의 내측면에는 박막 트랜지스터(TFT)와 대응하는 부분에 블랙 매트릭스(6)가 형성되고, 블랙 매트릭스(6)의 양측에는 색화소(7)가 형성된다. 블랙 매트릭스(6)와 색화소(7) 상부의 표면에 공통 전극(8)이 형성된다.The black matrix 6 is formed on the inner surface of the upper substrate 5 and corresponding to the thin film transistor TFT, and the color pixels 7 are formed on both sides of the black matrix 6. The common electrode 8 is formed on the surfaces of the black matrix 6 and the color pixels 7.

그리고, 도면에는 도시되지 않았지만, 상, 하 기판(1,5)의 내측면 표면에는 수평 배향막이 각각 설치되어 있다.Although not shown in the figure, horizontal alignment films are provided on the inner surface of the upper and lower substrates 1 and 5, respectively.

상하 기판(1,5) 사이에는 액정층(9)이 개재된다. 여기서, 이 액정층(9)내에는 게스트 호스트 모드인 경우, 네마틱 액정 분자(9a)와 입사된 광을 선택적으로 흡수, 차단하는 염색제(9b)가 포함된다. 이때, 염색제(9b)는 공지된 바와 같이, 빛이 염색제(9b)의 장축을 지날때는 빛이 흡수되고, 단축을 지날때는 빛이 투과된다.The liquid crystal layer 9 is interposed between the upper and lower substrates 1 and 5. Here, the liquid crystal layer 9 contains a nematic liquid crystal molecule 9a and a dyeing agent 9b for selectively absorbing and blocking incident light in the guest host mode. At this time, as the dye 9b is known, light is absorbed when the light passes the long axis of the dye 9b, and light passes through the short axis.

여기서, 종래의 반사형 액정 표시 장치에서는 빛의 반사각을 개선하고자, 유기 절연막(2)표면에 인위적으로 모폴로지를 형성한다. 여기서, 모폴로지를 형성하는 방법은, 유기 절연막(3) 표면에 포토레지스트막을 형성한다음, 포토리소그래피 방식등으로 식각처리하여, 모폴로지를 형성하였다. 이와같이, 유기 절연막(2) 표면에 모폴로지를 형성하게 되면, 화소 전극(3) 또한 모폴로지를 갖게되어, 입사된 빛이 여러 방향으로 반사되어, 시야각 특성이 우수하게 된다.Here, in the conventional reflective liquid crystal display device, in order to improve the reflection angle of light, an artificial morphology is formed on the surface of the organic insulating film 2. Here, in the method of forming the morphology, a photoresist film is formed on the surface of the organic insulating film 3, and then etched by a photolithography method or the like to form a morphology. As described above, when the morphology is formed on the surface of the organic insulating film 2, the pixel electrode 3 also has a morphology, and the incident light is reflected in various directions, so that the viewing angle characteristic is excellent.

상기와 같은 종래의 반사형 액정 표시 장치는, 반사각을 개선시키기 위하여, 화소 전극(3)의 표면에 인위적인 모폴로지를 부여하였다.In the conventional reflective liquid crystal display device as described above, in order to improve the reflection angle, an artificial morphology is imparted to the surface of the pixel electrode 3.

그러나, 종래와 같이, 모폴로지를 부여하기 위하여는 포토레지스트막을 피복하고, 포토리소그래피 방식으로 노광을 실시한다음, 패터닝 공정을 실시하여야 하므로, 제조 공정이 복잡하다.However, in order to impart a morphology, the manufacturing process is complicated because the photoresist film is coated, the photolithography exposure is performed, and the patterning process is performed.

이로 인하여, 제조 비용이 상승하게 된다.This increases the manufacturing cost.

따라서, 본 발명의 목적은, 단순한 공정으로 화소 전극 표면에 모폴로지를 부여할 수 있는 반사형 액정 표시 장치의 형성방법을 제공하는 것이다.Accordingly, an object of the present invention is to provide a method of forming a reflective liquid crystal display device capable of imparting morphology to the surface of a pixel electrode in a simple process.

또한, 본 발명의 다른 목적은, 단순한 공정으로 막 표면에 모폴로지를 형성하는 방법을 제공하는 것이다.Another object of the present invention is to provide a method of forming a morphology on the surface of a film by a simple process.

도 1은 종래의 반사형 액정 표시 장치의 단면도.1 is a cross-sectional view of a conventional reflective liquid crystal display device.

도 2는 본 발명의 실시예에 따른 반사형 액정 표시 장치의 형성방법을 설명하기 위한 단면도.2 is a cross-sectional view illustrating a method of forming a reflective liquid crystal display device according to an exemplary embodiment of the present invention.

도 3은 본 발명의 다른 실시예에 따른 반사형 액정 표시 장치의 형성방법을 설명하기 위한 단면도.3 is a cross-sectional view for describing a method of forming a reflective liquid crystal display according to another exemplary embodiment of the present invention.

(도면의 주요 부분에 대한 부호의 설명)(Explanation of symbols for the main parts of the drawing)

11 : 하부 기판 12 : 박막 트랜지스터11: lower substrate 12: thin film transistor

13 : 게이트 절연막 14 : 유기 절연막13 gate insulating film 14 organic insulating film

15 : 콘택홀 16,161,162 : 시브15: contact hole 16,161,162: sheave

17 : 타겟17: target

상기한 본 발명의 목적을 달성하기 위하여, 본 발명의 일 실시예에 따르면, 모폴로지를 갖는 층이 증착될 표면상에 적어도 하나 이상의 시브와, 시브 상부에 타겟층을 배치시킨다음, 층이 증착될 표면으로 시브를 통하여 타겟을 전사하여 증착을 실시하는 것을 특징으로 한다.In order to achieve the above object of the present invention, according to an embodiment of the present invention, at least one sieve on the surface on which the layer having the morphology is to be deposited, and a target layer on the sieve is disposed, the surface on which the layer is to be deposited It is characterized in that the deposition is carried out by transferring the target through the sieve.

또한, 본 발명의 다른 실시예에 따르면, 하부 기판상에 적어도 게이트 절연막을 포함하는 박막 트랜지스터를 형성하는 단계와, 상기 박막 트랜지스터가 형성된 하부 기판상에 유기 절연막을 도포하는 단계와, 상기 박막 트랜지스터의 소정 부분이 노출되도록 유기 절연막의 소정 부분을 제거하여, 콘택홀을 형성하는 단계와, 상기 하부 기판 결과물 상부에 화소 전극용 타겟을 설치하고, 상기 타겟과 하부 기판에 적어도 하나이상의 시브를 개재하는 단계와, 상기 시브를 통하여 타겟을 전사하여, 하부 기판의 유기 절연막상에 화소 전극을 형성하는 단계를 포함한다.Further, according to another embodiment of the present invention, forming a thin film transistor including at least a gate insulating film on the lower substrate, applying an organic insulating film on the lower substrate on which the thin film transistor is formed, Removing a predetermined portion of the organic insulating layer to expose a predetermined portion, forming a contact hole, installing a target for the pixel electrode on the lower substrate resultant, and interposing at least one sieve between the target and the lower substrate And transferring a target through the sieve to form a pixel electrode on the organic insulating layer of the lower substrate.

본 발명에 의하면, 모폴로지층이 형성될 매체와 타겟층 사이에 적어도 하나이상의 시브를 받치고 스퍼터링 또는 증착 공정을 실시하면, 표면에 별도의 공정없이도 증착되는 막 표면에 모폴로지가 형성된다.According to the present invention, when a sputtering or deposition process is performed between at least one sieve between a medium and a target layer on which a morphology layer is to be formed, a morphology is formed on the surface of a film to be deposited without a separate process on the surface.

이하 첨부한 도면에 의거하여 본 발명의 바람직한 실시예를 자세히 설명하도록 한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

첨부한 도면 도 2는 본 발명의 실시예에 따른 반사형 액정 표시 장치의 형성방법을 설명하기 위한 단면도이고, 도 3은 본 발명의 다른 실시예에 따른 반사형 액정 표시 장치의 형성방법을 설명하기 위한 단면도이다.2 is a cross-sectional view illustrating a method of forming a reflective liquid crystal display device according to an exemplary embodiment of the present invention, and FIG. 3 is a method of forming a reflective liquid crystal display device according to another embodiment of the present invention. It is a section for.

본 실시예에서는 하부 기판 구조에 대하여만 설명하고, 상부 기판은 종래와 동일하다.In the present embodiment, only the lower substrate structure is described, and the upper substrate is the same as the conventional one.

도 2a에 도시된 바와 같이, 하부 기판(11) 상에 공지의 방식으로 게이트 절연막(13)을 포함하는 박막 트랜지스터(12)를 형성한다. 이어, 박막 트랜지스터(12)가 형성된 하부 기판(11) 상부에 유기 절연막(14)을 형성한다. 유기 절연막(14)으로는 아크릴 수지가 이용될 수 있다.As shown in FIG. 2A, the thin film transistor 12 including the gate insulating layer 13 is formed on the lower substrate 11 in a known manner. Next, the organic insulating layer 14 is formed on the lower substrate 11 on which the thin film transistor 12 is formed. As the organic insulating layer 14, an acrylic resin may be used.

그리고나서, 박막 트랜지스터(12)의 드레인 전극 부분이 노출되도록 유기절연막(14)의 소정 부분을 제거함으로써, 콘택홀(15)을 형성한다.Then, the contact hole 15 is formed by removing a predetermined portion of the organic insulating film 14 so that the drain electrode portion of the thin film transistor 12 is exposed.

그후, 하부 기판(11) 상에 시브(seive: 16)을 배치하고, 시브(16) 상에 화소전극 타겟(17) 즉, 알루미늄 타겟을 배치한다음, 스퍼터링 또는 진공 증착법을 이용하여, 하부 기판(11)의 유기 절연막(14) 상부에 화소 전극(18)을 형성한다. 이와같이, 타겟(17) 하부에 시브(16)을 받치고 증착 공정은 진행하면, 시브(16)의 눈(16a)에 해당하는 부분에는 다량의 알루미늄이 눈(16a)을 통하여 전달되어, 돌기부가 형성된다. 한편, 시브(16)의 격자(16b)에 해당하는 부분에는 눈(16a)에 해당하는 부분보다는 소량의 알루미늄이 전달되어, 함몰부가 형성된다.Thereafter, a sieve 16 is disposed on the lower substrate 11, and a pixel electrode target 17, that is, an aluminum target is disposed on the sieve 16, and then the lower substrate is formed by sputtering or vacuum deposition. The pixel electrode 18 is formed on the organic insulating film 14 of (11). As such, when the sieve 16 is supported under the target 17 and the deposition process proceeds, a large amount of aluminum is transferred to the portion corresponding to the eye 16a of the sieve 16 through the eye 16a to form a protrusion. do. On the other hand, a small amount of aluminum is transferred to the portion corresponding to the grating 16b of the sheave 16 than the portion corresponding to the eye 16a, so that a depression is formed.

이에따라, 별도의 포토리소그라피 공정없이 증착 공정만으로도 화소 전극 표면에 모폴로지를 부여하게 된다.Accordingly, the morphology is imparted to the surface of the pixel electrode only by the deposition process without a separate photolithography process.

또한, 도 3과 같이, 요철이 조밀한 모폴로지를 형성하기 위하여는 시브(161,162)를 적어도 하나이상 배치시키되, 시브(161,162)간의 눈과 눈이 겹치지않도록 배치시킨다음, 스퍼터링 또는 진공 증착 공정을 진행한다.In addition, as shown in FIG. 3, in order to form a dense morphology with irregularities, at least one sieve 161 and 162 is disposed, and the eyes and the eyes between the sieves 161 and 162 are not overlapped, and then sputtering or vacuum deposition is performed. do.

또한, 본 발명은 반사형 액정 표시 장치에 국한되는 것만은 아니다. 예를들어, 표면 모폴로지를 원하는 모든 공정에 적용될 수 있다.In addition, the present invention is not limited to the reflective liquid crystal display device. For example, surface morphology can be applied to any desired process.

이상에서 자세히 설명된 바와 같이, 본 발명에 의하면, 반사형 액정 표시 장치에서 화소 전극을 형성하는 공정시, 기판과 타겟 사이에 적어도 하나이상의 시브를 받치고 스퍼터링 또는 증착 공정을 실시하면, 화소 전극 표면에 별도의 공정없이도 모폴로지가 형성된다.As described in detail above, according to the present invention, in the process of forming the pixel electrode in the reflective liquid crystal display, if the substrate and the target are subjected to at least one sieve and the sputtering or deposition process is performed, The morphology is formed without a separate process.

이에 따라, 공정이 단순화되어, 제조 비용이 감축된다.This simplifies the process and reduces the manufacturing cost.

기타, 본 발명은 그 요지를 일탈하지 않는 범위에서 다양하게 변경하여 실시할 수 있다.In addition, this invention can be implemented in various changes within the range which does not deviate from the summary.

Claims (3)

모폴로지가 부여된 표면을 갖는 층을 형성하는 방법으로서,A method of forming a layer having a morphologically imparted surface, 상기 모폴로지를 갖는 층이 증착될 표면상에 적어도 하나 이상의 시브와, 시브 상부에 타겟층을 배치시킨다음, 상기 층이 증착될 표면으로 시브를 통하여 타겟을 전사하여 증착을 실시하는 것을 특징으로 하는 모폴로지 형성방법.Forming a morphology comprising placing at least one sieve on the surface on which the layer having the morphology is to be deposited, and a target layer on the top of the sieve, and transferring the target through the sieve onto the surface on which the layer is to be deposited. Way. 하부 기판상에 적어도 게이트 절연막을 포함하는 박막 트랜지스터를 형성하는 단계;Forming a thin film transistor including at least a gate insulating film on the lower substrate; 상기 박막 트랜지스터가 형성된 하부 기판상에 유기 절연막을 도포하는 단계;Applying an organic insulating film on the lower substrate on which the thin film transistor is formed; 상기 박막 트랜지스터의 소정 부분이 노출되도록 유기 절연막의 소정 부분을 제거하여, 콘택홀을 형성하는 단계;Forming a contact hole by removing a portion of the organic insulating layer to expose a portion of the thin film transistor; 상기 하부 기판 결과물 상부에 화소 전극용 타겟을 설치하고, 상기 타겟과 하부 기판에 적어도 하나이상의 시브를 개재하는 단계; 및Installing a target for a pixel electrode on the lower substrate resultant, and interposing at least one sieve between the target and the lower substrate; And 상기 시브를 통하여 타겟을 전사하여, 하부 기판의 유기 절연막상에 화소 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 반사형 액정 표시 장치의 형성방법.And transferring a target through the sieve to form a pixel electrode on the organic insulating layer of the lower substrate. 제 2 항에 있어서, 상기 타겟은 알루미늄인 것을 특징으로 하는 반사형 액정 표시 장치의 형성방법.The method of claim 2, wherein the target is aluminum.
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KR101486974B1 (en) * 2008-01-02 2015-01-29 삼성디스플레이 주식회사 Display and manufacturing method of the same
US10267507B2 (en) 2006-09-29 2019-04-23 Osram Oled Gmbh Organic lighting device and lighting equipment
CN110441941A (en) * 2019-08-21 2019-11-12 数字王国空间（北京）传媒科技有限公司 A kind of display module and head-wearing display device

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JP3489218B2 (en) * 1994-10-14 2004-01-19 セイコーエプソン株式会社 Manufacturing method of liquid crystal display device
JP2912176B2 (en) * 1994-12-28 1999-06-28 日本電気株式会社 Reflective liquid crystal display
JPH09226043A (en) * 1996-02-26 1997-09-02 Mitsui Toatsu Chem Inc Reflector
JPH10154817A (en) * 1996-09-27 1998-06-09 Hoshiden Philips Display Kk Reflective liquid crystal display element

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10267507B2 (en) 2006-09-29 2019-04-23 Osram Oled Gmbh Organic lighting device and lighting equipment
KR101486974B1 (en) * 2008-01-02 2015-01-29 삼성디스플레이 주식회사 Display and manufacturing method of the same
CN110441941A (en) * 2019-08-21 2019-11-12 数字王国空间（北京）传媒科技有限公司 A kind of display module and head-wearing display device

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