KR20000000883A - Automatic cleaning method of exhaust lines - Google Patents

Automatic cleaning method of exhaust lines Download PDF

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Publication number
KR20000000883A
KR20000000883A KR1019980020802A KR19980020802A KR20000000883A KR 20000000883 A KR20000000883 A KR 20000000883A KR 1019980020802 A KR1019980020802 A KR 1019980020802A KR 19980020802 A KR19980020802 A KR 19980020802A KR 20000000883 A KR20000000883 A KR 20000000883A
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South Korea
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valve
exhaust line
gas
exhaust
line
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KR1019980020802A
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Korean (ko)
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KR100270754B1 (en
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이선영
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이선영
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning

Abstract

PURPOSE: An automatic cleaning method is provided to minimize a deposition of exhaust gases inner an exhaust line by periodically supplying nitrogen gas having a desired temperature. CONSTITUTION: The cleaning method comprises the steps of opening a solenoid valve(24) due to control of a controller(22) when a cleaning valve(18) is opened and a process valve(20) is closed, thereby exhausting nitrogen gas holding constant pressure and temperature into a purge line(26); and periodic supplying the nitrogen gas to an exhaust line(10) through a checking valve(30) located in the exhaust line(10).

Description

배기라인의 자동 세정방법(Exhaust pipe line auto purge method)Exhaust pipe line auto purge method

본 발명은 배기라인의 자동 세정방법에 관한 것으로, 더욱 상세하게는 웨이퍼 처리공정을 마친 가연 배기가스가 3웨이밸브를 경유하여 스크러버로 보내지는 배기라인에 주기적으로 적정 온도를 갖는 질소가스를 공급하여 배기라인 내부표면에 상기 가연 배기가스가 분말화하여 증착되는 것을 최소화시키기 위한 배기라인의 자동 세정방법이다.The present invention relates to an automatic cleaning method of an exhaust line, and more particularly, by supplying nitrogen gas having an appropriate temperature periodically to an exhaust line where flammable exhaust gas, which has been processed in a wafer processing, is sent to a scrubber via a 3-way valve. It is an automatic cleaning method of an exhaust line for minimizing the deposition of the combustible exhaust gas powdered on the inner surface of the exhaust line.

반도체 제조공정에서는 다종의 프로세싱 가스(Processing gas)를 사용하게 되는데 상기 반응 가스들은 대개가 독성이 강해서 인체에 치명적이고 또한 다른 가스나 공기와 혼합되면 폭발할 수는 가연성 가스기 때문에 공정후 상기 가스의 처리가 환경의 안전성면에서 상당히 중요한 비중을 차지하고 있기 때문에 상기 가스는 공정라인상에서 정화처리되어 무해한 가스로 배출되도록 의무화되어 있다.In the semiconductor manufacturing process, a variety of processing gases are used. The reaction gases are generally toxic and are fatal to humans and are combustible gases that can explode when mixed with other gases or air. Since the treatment is of great importance in terms of environmental safety, the gas is mandated to be purified on the process line and discharged as a harmless gas.

예시도면 도 1은 종래 배기라인을 적용한 반도체 제작 공정을 보인 것으로, 보통 웨이퍼를 다량으로 처리하기 위해 다수의 챔버(chamber)가 구비되고, 각 챔버에는 프로세싱 가스 흡입라인과 클린가스 흡입라인이 연결되며, 챔버의 배출라인에는 진공펌프가 설치된다. 또한 진공펌프의 배출라인에는 3웨이밸브(16)와 배기라인(10)을 매개로 하여 반응가스 소각 정화용 스크러버(scrubber)를 통한 가연배기부와 산배기부가 연결된다.Exemplary Drawing FIG. 1 shows a semiconductor fabrication process using a conventional exhaust line. In general, a plurality of chambers are provided to process a large amount of wafers, and processing chamber suction lines and clean gas suction lines are connected to each chamber. In the discharge line of the chamber, a vacuum pump is installed. In addition, the exhaust line of the vacuum pump is connected to the combustible exhaust portion and the acid exhaust portion through the reaction gas incineration scrubber (scrubber) through the three-way valve 16 and the exhaust line (10).

반도체인 웨이퍼 생산시에는 가연성가스 및 부식성이 강한 산성가스를 이용하여 웨이퍼에 막을 형성하도록 되어 있는데, 위와 같이 가연성 가스를 이용하여 1차 가공이 끝나면 챔버를 청소하고 다시 2차 가공을 위하여 산성가스를 챔버에 주입하게 된다.In the production of wafers, which are semiconductors, films are formed on the wafers using flammable gases and highly corrosive acid gases.Cleaning the chamber after the first processing is completed using the combustible gas as described above, and again removing the acid gas for the second processing. It is injected into the chamber.

챔버 청소시에는 질소(N2)가스를 사용하는데 잔류 가연성가스의 청소시에는 가연배기부로 질소가스를 배출시키고, 잔류산성가스의 청소시에는 산배기부로 질소가스를 배출시키도록 되어 있다.Nitrogen (N 2 ) gas is used to clean the chamber. Nitrogen gas is discharged to the flammable exhaust unit when cleaning residual flammable gas, and nitrogen gas is discharged to the acid exhaust unit when cleaning residual acid gas.

세정시 사용되는 질소가스는 불활성기체로 다른 가스와 화학반응을 일으키지 않으므로 안전하며, 챔버나 3웨이밸브 및 배기라인(10)에서 배기가스의 분말화를 억제하는 역할을 하고 있다.Nitrogen gas used in the cleaning is inert gas, and does not cause a chemical reaction with other gases, and is safe, and serves to suppress powdering of the exhaust gas in the chamber, the three-way valve, and the exhaust line 10.

반도체 제조공정에서 배출되는 가연성 가스는 온도의 변화에 따라 분말화하여 배기되는 과정중에서, 즉 스크러버(가스처리장치)까지 연결하는 통로인 배기파이프 내부에 분말이 증착되어 통로가 좁게 하여 가스배기를 방해한다. 이로 인해 펌프 및 장비의 가동에 많은 악영향을 미치게 되는데, 파우더의 증착속도는 배기라인(10)의 길이와 비례하게 된다.The combustible gas discharged from the semiconductor manufacturing process is powdered in accordance with the change of temperature, that is, powder is deposited inside the exhaust pipe, which is a passage connecting to the scrubber (gas treatment device), so that the passage is narrowed and obstructs gas exhaust. do. This has a lot of adverse effects on the operation of the pump and equipment, the deposition rate of the powder is proportional to the length of the exhaust line (10).

그리고, 이러한 배기라인(10)은 주기적으로 공정을 중지시킨 다음 배관라인을 떼어내서 관내의 증착분말을 제거하는 청소작업이 이루어져야 한다.In addition, the exhaust line 10 should be cleaned periodically to stop the process and then remove the pipe line to remove the deposition powder in the pipe.

따라서, 종래에는 배기라인(10)의 외주에 별도의 가열장치(12)와 냉각장치(14)를 설치하여 배기라인(10)과 그속의 가스가 일정온도가 되도록 유지하므로써 가스가 분말화되는 온도변화를 사전에 차단하여 배기라인의 청소주기를 길게 하고 있다.Therefore, conventionally, by installing a separate heating device 12 and a cooling device 14 on the outer periphery of the exhaust line 10 to maintain the exhaust line 10 and the gas therein to a constant temperature, the temperature at which the gas is powdered The cleaning cycle of the exhaust line is extended by blocking the change in advance.

도면중 미설명 부호 18은 클린가스를 산배기부로 배출시키기 위해 개방하는 클린밸브이고, 20은 가연성 가스를 스크러버로 배출시키도록 개방하는 프로세스밸브이다.In the figure, reference numeral 18 denotes a clean valve that opens to discharge the clean gas to the acid exhaust, and 20 denotes a process valve that opens to discharge the combustible gas to the scrubber.

그러나, 3웨이밸브(16)의 프로세스밸브가 닫혀 있는 시기에는 배기라인(10) 속의 가스들이 일정시간(약 0.3초)이상 지나면 분말화가 시작되어 배관내에 증착이 진행되는 문제가 있으며, 이를 방지하기 위해 별도의 가열장치(12)와 냉각장치(14)의 설치는 고비용이며, 생산성도 저하되는 문제가 있었다.However, when the process valve of the three-way valve 16 is closed, when the gas in the exhaust line 10 passes for a predetermined time (about 0.3 seconds) or more, powdering starts and deposition proceeds in the pipe. In order to install the separate heating device 12 and the cooling device 14 is expensive, there is a problem that the productivity is also lowered.

이에 본 발명은 상기 불편함을 해소하기 위하여 안출된 것으로, 배기라인에 주기적으로 적정 온도를 갖는 질소가스를 공급하여 배기라인 내부표면에 상기 가연 배기가스가 분말화하여 증착되는 것을 최소화시키기 위한 배기라인의 자동 세정방법을 제공함에 그 목적이 있는 것이다.Accordingly, the present invention has been made to solve the inconvenience, an exhaust line for supplying nitrogen gas having an appropriate temperature periodically to the exhaust line to minimize the deposition of the combustible exhaust gas powder on the inner surface of the exhaust line Its purpose is to provide an automatic cleaning method.

이를 위해 본 발명은 진공펌프 후방의 3웨이밸브와 스크러버사이의 배기라인에 적정온도를 갖는 질소가스가 클린밸브는 열려 있고 프로세스 밸브는 닫혀있을 때 콘트롤러의 제어로 솔레노이드 밸브를 오픈시켜 배기라인의 요소마다에 설치된 체크밸브로 부터 배기라인내로 주기적으로 공급되도록 한 것이다.To this end, the present invention is a nitrogen gas having an appropriate temperature in the exhaust line between the three-way valve and the scrubber behind the vacuum pump, the solenoid valve is opened by the control of the controller when the clean valve is open and the process valve is closed, the elements of the exhaust line It is to be supplied periodically into the exhaust line from the check valve installed in each.

따라서, 본 발명은 배기라인에 집중적으로 분말이 증착되는 부위 즉, 굴곡부와 같은 위치에 질소가스 입력의 체크밸브를 설치하여 적정온도의 질소가스를 주기적으로 공급받아 배기라인내의 분말증착을 최소화하여 배기라인을 떼어내서 하는 청소작업의 주기를 매우 길게 하는 효과를 얻도록 하는 것이다.Therefore, the present invention by installing a check valve of the nitrogen gas input at the site where the powder is concentrated in the exhaust line, that is, the bent portion, by receiving nitrogen gas at an appropriate temperature periodically to minimize the powder deposition in the exhaust line to exhaust The effect is to make the cleaning cycle very long by removing the lines.

도 1 은 종래 배기라인을 적용한 반도체 제작 공정도,1 is a semiconductor manufacturing process diagram applying a conventional exhaust line,

도 2 는 본 발명에 따른 배기라인의 자동 세정방법의 구성도이다.2 is a block diagram of an automatic cleaning method of the exhaust line according to the present invention.

< 도면의 주요부분에 대한 부호의 설명 ><Description of Symbols for Major Parts of Drawings>

10 - 배기라인, 16 - 3웨이밸브,10-exhaust line, 16-3 way valve,

18 - 클린밸브, 20 - 프로세스밸브,18-clean valve, 20-process valve,

22 - 콘트롤러, 24 - 솔레노이드밸브,22-controller, 24-solenoid valve,

26 - 퍼지라인, 30 - 체크밸브.26-purge line, 30-check valve.

이하 첨부된 예시도면과 함께 본 발명을 설명하면 다음과 같다.Hereinafter, the present invention will be described with reference to the accompanying drawings.

본 발명은 3웨이밸브(16)의 개폐상태 즉, 클린밸브(18)는 개방되어 있고 프로세스밸브(20)는 닫혀있는 조건에서 이를 감지한 콘트롤러(22)가 솔레노이드밸브(24)를 개방시켜서 일정압과 적정온도를 유지하는 질소가스를 퍼지라인(26)으로 배출시키고, 배기라인(10)의 굴곡부 및 기타 분말증착 집중부위에 설치된 체크밸브(30)들을 통해 퍼지라인(26)내 상기 질소 가스를 배기라인(10)에 주기적으로 공급되게 하여 가연성 가스의 분말증착화를 최소화시키는 배기라인의 자동 세정방법이다.In the present invention, the controller 22, which senses this in the open / closed state of the three-way valve 16, that is, the clean valve 18 is open and the process valve 20 is closed, opens the solenoid valve 24 to maintain a constant state. Nitrogen gas, which maintains pressure and proper temperature, is discharged to the purge line 26, and the nitrogen gas in the purge line 26 is provided through check valves 30 installed at the bent portion and other powder deposition concentration portions of the exhaust line 10. It is a method for automatic cleaning of the exhaust line to periodically supply to the exhaust line 10 to minimize the powder deposition of the combustible gas.

예시도면 도 2 는 본 발명에 따른 배기라인의 자동 세정방법의 구성도이다.2 is a block diagram of an automatic cleaning method of an exhaust line according to the present invention.

여기서 본 발명은 3웨이밸브(16)의 클린밸브(18)와 프로세스밸브(20)의 개폐상태를 감지하여 솔레노이드(24)를 작동시키는 콘트롤러(22)와, 상기 솔레노이드밸브(24)의 개방에 따라 질소가스가 유입되는 퍼지라인(26)과, 상기 퍼지라인(26)과 배기라인(10)의 다수개소를 연결하는 체크밸브(30)로 구성된 것이되, 상기 배기라인(10)의 체크밸브(30) 설치위치는 배기라인(10)의 굴곡부와 그외 분말증착이 집중적으로 이루어지는 부위에 해당된다.Herein, the present invention senses the open / closed state of the clean valve 18 and the process valve 20 of the three-way valve 16 to operate the solenoid 24 and the opening of the solenoid valve 24. According to the purge line 26, the nitrogen gas is introduced, and the check valve 30 for connecting a plurality of places of the purge line 26 and the exhaust line 10, the check valve of the exhaust line 10 (30) The installation position corresponds to the bent portion of the exhaust line 10 and other areas where powder deposition is concentrated.

따라서, 본 발명은 가스반응 챔버에서 프로세스 공정을 마치고 클린가스가 투입되면, 3웨이밸브(16)에서는 프로세스밸브(20)가 닫히고, 클린밸브(18)가 열리게 된다.Therefore, in the present invention, when the clean gas is injected after the process is completed in the gas reaction chamber, the process valve 20 is closed at the three-way valve 16 and the clean valve 18 is opened.

콘트롤러(22)에서 상기한 상태의 조건을 감지하게 되면 즉시 구동신호를 솔레노이드밸브(24)로 보내어 상기한 솔레노이드밸브(24)를 개방시키게 된다.When the controller 22 senses the above condition, the driving signal is immediately sent to the solenoid valve 24 to open the solenoid valve 24.

이러한 솔레노이드밸브(24)의 개방으로 일정압과 적정온도를 유지하는 세정용 질소가스를 퍼지라인(26)으로 공급하게 된다.The opening of the solenoid valve 24 supplies the purge line 26 with the cleaning nitrogen gas that maintains a constant pressure and a proper temperature.

여기서 적정온도라는 것은 배기라인의 가연성 가스가 냉각이나 가열로 인해 분말화하지 않는 정도의 온도로써 사용되는 가연성가스의 종류에 따라 온도수치가 달라질 수 있다.Here, the appropriate temperature may be a temperature at which the combustible gas of the exhaust line is not powdered due to cooling or heating, and the temperature value may vary depending on the type of combustible gas used.

이렇게 퍼지라인(26)을 통해 공급된 질소가스는 체크밸브(30)를 거쳐서 배기라인(10)의 분말이 많이 증착될 거라도 예상되는 지점에 공급되어져 가연성 가스의 정체현상을 방지함과 더불어 가연성 가스의 분말화를 억제시키게 된다.The nitrogen gas supplied through the purge line 26 is supplied to the expected point even though a large amount of powder in the exhaust line 10 is deposited through the check valve 30 to prevent congestion of the combustible gas and the combustible gas. It suppresses the powdering of.

따라서, 본 발명은 공정중 분할개폐식으로 작동하는 3웨이밸브(16)의 개폐상태를 조건으로 하여 주기적으로 세척용 질소가스를 분말증착이 쉽게 일어날 수 있는 배기라인(10)의 요소에 집중적으로 불어넣어줌으로써 배관을 다떼어내서 하는 청소주기를 매우 길게 할수 있다.Therefore, the present invention intensively blows the nitrogen gas for cleaning periodically to the elements of the exhaust line 10 in which powder deposition can easily occur, subject to the open / closed state of the three-way valve 16 operating in a split-opening manner during the process. By putting them in, the cleaning cycle can be very long.

상기한 바와 같이 본 발명은 3웨이밸브(16)의 개폐상태 즉, 클린밸브(18)는 개방되어 있고 프로세스밸브(20)는 닫혀있는 조건에서 이를 감지한 콘트롤러(22)가 솔레노이드밸브(24)를 개방시켜서 일정압과 적정온도를 유지하는 질소가스를 퍼지라인(26)으로 배출시키고, 배기라인(10)의 굴곡부 및 기타 분말증착 집중부위에 설치된 체크밸브(30)들을 통해서 퍼지라인(26)내의 상기 질소 가스를 배기라인(10)에 주기적으로 공급되게 하여 배기라인내의 분말증착을 최소화할 수 있기 때문에, 배기라인을 떼어내서 하는 청소작업의 주기를 매우 길게 할 수 있으며, 이로인해 작업의 연속성이 길어지며, 생산효율 또한 증가되는 효과가 있다.As described above, according to the present invention, the controller 22 which detects the open / close state of the three-way valve 16, that is, the clean valve 18 is open and the process valve 20 is closed, is the solenoid valve 24. To discharge the nitrogen gas maintaining a constant pressure and proper temperature to the purge line (26), and through the check valve (30) installed in the bent portion and other powder deposition concentration of the exhaust line (10) purge line (26) Since the nitrogen gas in the gas can be periodically supplied to the exhaust line 10 to minimize powder deposition in the exhaust line, the cycle of cleaning by removing the exhaust line can be made very long, thereby continuity of work. This is longer, the production efficiency is also increased.

Claims (1)

3웨이밸브(16)의 개폐상태 즉, 클린밸브(18)는 개방되어 있고 프로세스밸브(20)는 닫혀있는 조건에서 이를 감지한 콘트롤러(22)가 솔레노이드밸브(24)를 개방시켜서 일정압과 적정온도를 유지하는 질소가스를 퍼지라인(26)으로 배출시키고, 배기라인(10)의 굴곡부 및 기타 분말증착 집중부위에 설치된 체크밸브(30)들을 통해 퍼지라인(26)내 상기 질소 가스를 배기라인(10)에 주기적으로 공급되게 하여 가연성 가스의 분말증착화를 최소화시키는 배기라인의 자동 세정방법.In the open / closed state of the three-way valve 16, that is, the clean valve 18 is open and the process valve 20 is closed, the controller 22, which senses this, opens the solenoid valve 24 to maintain a constant pressure and proper pressure. The nitrogen gas maintaining the temperature is discharged to the purge line 26, and the nitrogen gas in the purge line 26 is exhausted through the check valves 30 installed at the bent portion of the exhaust line 10 and other powder deposition concentration portions. An automatic cleaning method of an exhaust line which is periodically supplied to (10) to minimize powder deposition of flammable gas.
KR1019980020802A 1998-06-05 1998-06-05 Exhaust pipe line auto purge method KR100270754B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100444405B1 (en) * 2001-11-02 2004-08-16 주성엔지니어링(주) cooling apparatus of chamber for manufacturing semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100444405B1 (en) * 2001-11-02 2004-08-16 주성엔지니어링(주) cooling apparatus of chamber for manufacturing semiconductor

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