KR19990031087U - Gas supply system of ion implantation equipment - Google Patents

Abstract

The present invention relates to a gas supply system of ion implantation equipment. Unlike the conventional method, the gas is prevented from mixing by independently configuring the exhaust gas line, and the process vacuum is suddenly destroyed by adjusting and venting with a fine adjustment valve when replacing gas. In addition, it is possible to prevent the process defects caused by, and to open and close the leak valve and the air valve at the same time to eliminate the possibility of mixed gas flow into the process chamber of the ion implanter, and to prevent contamination of the leak valve.

Description

Gas supply system of ion implantation equipment

The present invention relates to a gas supply system of the ion implantation equipment, and more particularly to a gas supply system of the ion implantation equipment suitable for preventing the mixing of different types of gas and to perform a stable process operation.

The system for supplying the necessary process gas to the ion implanter is a series of gas lines from several gas tanks storing different kinds of gas to select the required gas and supply it to the ion implanter. It is composed of various valves and the like installed on the gas line, which can be referred to as a gas supply system of ion implantation equipment.

Figure 1 is a device diagram showing the configuration of the gas supply system of the conventional ion implantation equipment, as shown in this, the gas supply system of the conventional ion implantation equipment is provided with a main line (1) connected to the ion implantation equipment, Gas supply lines 3 are connected to the main line 1 from gas tanks 2 storing gas of different types, respectively. On the gas supply lines 3, gas lines 2 from main tanks 2 are installed. The regulator (4), the manual valve (5), the bypass valve (6), the leak valve (7), and the check valve (C) are installed in the order toward (1). Here, the regulator 4 is divided into a high pressure side and a low pressure side to adjust the pressure. The manual valve 5 is a manual opening and closing valve, and the bypass valve 6 can select one of two directions in which the gas flows. The leak valve 7 is a valve that operates by air to open when air enters and closes when it does not enter. The check valve C restricts the flow of gas to one direction and prevents flow in the reverse direction. . On the other hand, the bypass valve 6 is connected to an exhaust gas line 8 connected to one point of the main line 1 via the exhaust manual valve 7. It is configured to be used jointly in the gas tank (2) and one exhaust manual valve (7) is to be installed on the section used in the joint. In addition, the main manual valve 9 is installed at a position past the point where the exhaust gas line 8 of the main line 1 is connected.

In FIG. 1, for convenience, only a reference to a device related to one gas tank 2 is shown, and a device related to another gas tank may be displayed. The main manual valve 9 and the exhaust manual valve 7 are installed one by one, and are commonly used in all the gas tanks 2, and other devices except them are provided for each one of the gas tanks 2.

Referring to the operation of the gas supply system of the conventional ion implantation equipment having the structure as described above are as follows.

During the process work, the process gas is selected and the switch for operating the gas supply line 3 of the gas tank 2 in which the corresponding gas is stored is turned on. In this case, air is supplied to the leak valve 7. As the leak valve 7 opens, the process gas is supplied through the gas supply line 3 through the main line 1, wherein the bypass valve 6 opens the gas supply line 3 and opens the gas exhaust line. The part leading to (8) is operated beforehand to close.

In order to proceed with the process by selecting a different process gas, it is necessary to completely extract the existing gas remaining on the line in order to prevent the mixing of the gas, for this purpose, the gas in front of the bypass valve (6) Operate the bypass valve 6 so that the supply line 3 and the gas exhaust line 8 communicate with each other, and then pump the regulator 4, the manual valve 5, the bypass valve 6, and the exhaust manual valve 7 ), The remaining manual gas is discharged through the main manual valve (9), and then a process using a new process gas is performed.

However, in the gas supply system of the conventional ion implantation equipment having the structure as described above, only one exhaust manual valve 7 is installed, and some sections of the exhaust gas line 8 behind the exhaust manual valve 7 are each gas tank ( It is configured to be used jointly in 2), there is a fear that the gas is mixed with each other, especially if the bypass valve (6) is not completely closed due to failure, etc. this concern is even greater.

In addition, when the gas is to be replaced and pumped by opening the exhaust manual valve 7, there is a problem in that the process vacuum is suddenly destroyed due to the characteristics of the exhaust manual valve 7 which is difficult to finely adjust, thereby adversely affecting the gas.

Therefore, the object of the present invention devised by recognizing the problems described above is to eliminate the risk of mixing different types of gas and to fine-tune during exhaust for process gas replacement to prevent the process vacuum is suddenly destroyed. It is to provide a gas supply system of an ion implantation equipment.

1 is a device diagram showing the configuration of a gas supply system of a conventional ion implantation equipment.

Figure 2 is a device diagram showing the configuration of a gas supply system of the ion implantation equipment according to an embodiment of the present invention.

* Explanation of symbols for main parts of the drawings

1: main line 2: gas tank

3: gas supply line 4: regulator

5: manual valve 6: bypass valve

7: Leak Valve 8, 8 ': Gas Exhaust Line

9: Main Manual Valve 10: Air Valve

11: first exhaust manual valve 12: second exhaust manual valve

13: fine adjustment valve

In order to achieve the object of the present invention as described above, several gas tanks for storing different types of process gas are installed, and a gas line main line connected to the ion implantation equipment is installed, and main gas from each gas tank is installed. The same number of gas supply lines as the gas tanks connected to the line are installed, and the gas supply lines are operated at the same time as the points connected to the main line in the gas tank at the same time the regulator, the manual valve, and the switches for gas selection are switched on. A valve, an air valve, and a check valve are installed, and at one point on the gas supply line between the manual valve and the leak valve, a gas exhaust line connected to the main line at the other end is separately installed for each gas tank. In order from the point connected to the gas supply line to the point connected to the main line An exhaust manual valve and a second exhaust manual valve are installed, and the main line has a main manual valve installed at a position close to the ion injection equipment through a point where each gas exhaust line and a gas supply line are connected. A gas supply system of infusion equipment is provided.

Hereinafter, the present invention will be described in detail based on an embodiment of the present invention shown in the accompanying drawings.

Figure 2 is a device diagram showing the configuration of the gas supply system of the ion implantation equipment according to an embodiment of the present invention, as shown, the gas supply system of the ion implantation equipment according to the present invention is in progress of the ion implantation process Several gas tanks (2) for storing different kinds of process gases required are installed, and a main line (1), which is a gas line connected to the ion implantation equipment, is installed, and the gas starting from each gas tank (2). The supply line 3 is connected to the main line 1 so that the same number as the gas tank 2 is generally installed, and the gas supply line 3 is connected to the main line 1 in the gas tank 2. The regulator 4 which first regulates the pressure in the following order is followed by the manual valve 5 which is manually opened and closed, the leak valve 7 which is similar to the conventional method, and the air valve 10 is then used. And finally 첵 The leak valve C is installed, and the leak valve 7 and the air valve 10 are operated at the same time when the switch is turned on by selecting a gas to be supplied.

At one point on the gas supply line 3 between the manual valve 5 and the leak valve 7, a gas exhaust line 8 ′ having the other end connected to the main line 1 is separately installed for each gas tank 2. The number and the same number of gas tanks 2 are generally installed, and each gas exhaust line 8 'is manually opened and closed in order from the point connected to the gas supply line 3 to the point connected to the main line 1. Each of the first exhaust manual valve 11 and the second exhaust manual valve 12 is installed, and the main line 1 passes through a point where each gas exhaust line 8 'and a gas supply line 3 are connected. The main manual valve 9 is installed at a position near the ion implantation equipment.

As shown, a fine adjustment valve 13 capable of fine adjustment of the flow rate is provided between the first exhaust manual valve 11 and the second exhaust manual valve 12 of each gas exhaust line 8 '. It is preferable. The filter 14 installed on the gas supply line 3 filters out impurities that may be present in the gas.

The main difference between the gas supply system of the ion implantation equipment having the above-described structure and the conventional one is that the exhaust gas line 8 for each gas tank 2 in the related art has a common section and has a common exhaust installed in the section. Unlike having a manual valve 7, in the present invention, each exhaust gas line 8 ′ is installed so as to be independent without having a cavity section up to the main line 1 and each exhaust gas line 8 ′. The second exhaust manual valve 12 which functions as the conventional exhaust manual valve 7 is provided every time. Next, the conventional bypass valve 6 and the leak valve 7 are operated to operate the gas. Unlike the gas selected to flow from the supply line 3 to the gas exhaust line 8, the gas supply line (1) when the first exhaust manual valve 11 is closed and the leak valve 7 and the air valve 10 are opened. 3) open the first exhaust manual valve 11 and In the case of closing the air valve 10 and 7, the gas was allowed to flow to the gas exhaust line 8 ', that is, the simply bypass valve 6 was replaced with the first exhaust manual valve 11. Can be mentioned.

Referring to the operation of the gas supply system of the ion implantation equipment having the above structure is as follows.

First, when the gas for the process operation is to be supplied, the switch for activating the leak valve 7 and the air valve 10 at the same time, and accordingly, the regulator 4, the manual valve 5, the leak valve 7 The gas is supplied to the ion implantation equipment while passing through the air valve 10, the check valve C, and the main manual valve 9. At this time, the first exhaust manual valve 11 is in a closed state.

In order to extract the residual gas to use other types of gas, the leak valve 7 and the air valve 10 are turned off and the first exhaust manual valve 11 is opened and pumped. 4), the manual valve 5, the first exhaust manual valve 11, the fine adjustment valve 13, the second exhaust manual valve 12, the main manual valve (9) to be pumped.

The gas supply system of the ion implantation equipment according to the present invention having the structure as described above prevents gas from mixing by independently configuring the exhaust gas line, and adjusts the exhaust gas by adjusting it with a fine adjustment valve to exhaust the process. There is an effect that can prevent the process failure due to the sudden destruction phenomenon.

In addition, by opening and closing the leak valve and the air valve at the same time, there is an effect to eliminate the possibility of the mixed gas flow into the process chamber of the ion implanter, and to prevent contamination of the leak valve.

Claims (2)

Several gas tanks for storing different kinds of process gases are installed, and a main line, which is a gas line connected to the ion implantation equipment, is installed, and the same number of gas supplies as the gas tanks connected to the main lines from each gas tank are installed. Lines are installed, and the gas supply line is provided with a regulator valve, a manual valve, and a leak valve, an air valve, and a check valve which are operated simultaneously at the time of switching on for gas selection in the order of the points connected to the main line in the gas tank. At one point on the gas supply line between the manual valve and the leak valve, a gas exhaust line having the other end connected to the main line is separately installed for each gas tank, and each gas exhaust line is connected to the main line from a point connected to the gas supply line. The first exhaust manual valve and the second exhaust manual valve are installed in the order of The main line, each exhaust gas line and a gas supply line is connected through the branch ion implantation equipment Ion implantation equipment of the gas supply system, it characterized in that the main manual valve provided on the side closer to the position. The gas supply system for ion implantation apparatus according to claim 1, wherein a fine adjustment valve capable of fine adjustment of the flow rate is provided between the first exhaust manual valve and the second exhaust manual valve of each gas exhaust line.