KR19990015898U - Mask structure - Google Patents

Abstract

The present invention relates to a mask structure that improves the reliability of the device because the light transmittance of all parts is the same to suppress the generation of bridges.

The mask structure of the present invention includes a transparent substrate in which a plurality of conductive line regions and pattern regions larger than the conductive line are defined, a plurality of first light blocking layers formed on the transparent substrate of the conductive line regions, and the conductive line. It characterized in that it comprises a plurality of second light-shielding layer formed on the transparent substrate of the large pattern area with the light-transmitting portion in both sides to be equal to the amount of light between the first light-shielding layer.

Description

Mask structure

The present invention relates to a mask structure, and more particularly to a mask structure to improve the reliability of the device.

Lithography is a process that is frequently used in the manufacturing process of semiconductor devices.

The lithography process uses a first step of transferring a mask pattern to a photoresist and etching the underlying film, that is, the layer under the pattern of the photoresist, using the pattern of the photoresist, And a second process of removing the photoresist.

The mask structure according to the related art used in the lithography process is a word line or a bit line repeated in a cell-edge, that is, a peri-core region, as shown in FIG. 1. (Bit Line) Consists of a plurality of first and second light blocking layers 12 and 13 formed on the glass substrate 11 to define large pattern regions such as pattern and contact landing, respectively. do.

That is, the plurality of first light blocking layers 12 are formed on the glass substrate 11 of the regions where the plurality of word lines or bit lines are to be defined, and the region where the large pattern regions such as the plurality of contact landings are defined. The plurality of second light blocking layers 13 are formed on the glass substrate 11 of the field.

However, in the conventional mask structure, since the first and second light blocking layers are formed to define line patterns, such as word lines or bit lines, that are repeated on a glass substrate, and large patterns such as contact landing, respectively, the first light blocking layer is interposed therebetween. Rather, the light transmittance is decreased because the light transmitting area per unit area is small between the first and second light blocking layers, so that a bridge is generated between the first and second light blocking layers, thereby reducing the reliability of the device.

The present invention has been made to solve the above problems, and the object of the present invention is to provide a mask structure that improves the reliability of the device by suppressing the occurrence of bridges by making the transmittance of all parts the same.

1 is a plan view showing a mask structure according to the prior art

2 is a plan view showing a mask structure according to an embodiment of the present invention

Explanation of symbols for main parts of the drawings

31 glass substrate 32 first light shielding layer

33: second light blocking layer 34: light transmitting area

The mask structure of the present invention includes a transparent substrate in which a plurality of conductive line regions and pattern regions larger than the conductive line are defined, a plurality of first light blocking layers formed on the transparent substrate of the conductive line regions, and the conductive line. It characterized in that it comprises a plurality of second light-shielding layer formed on the transparent substrate of the large pattern area with the light-transmitting portion in both sides to be equal to the amount of light between the first light-shielding layer.

When described in detail with reference to the accompanying drawings a preferred embodiment of the mask structure according to the present invention as follows.

The mask structure according to the embodiment of the present invention used in the lithography process, as shown in Figure 2, to define a large pattern region, such as a word line or bit line pattern and contact landing repeated in the cell-edge, or ferry-core region, respectively The first light blocking layer 32 is formed on the glass substrate 31 and the second light blocking layer 33 having the light transmitting region 34 in both sides thereof.

That is, the plurality of first light blocking layers 32 are formed on the glass substrate 31 in regions where the plurality of word lines or bit lines are to be defined.

Then, second light blocking layers 33 having light-transmitting regions 34 in both sides are formed on the glass substrate 11 of regions in which large pattern regions such as the plurality of contact landings are to be defined.

Here, since the second light blocking layers 33 have light transmitting regions 34 in both sides, a light transmitting area per unit area between the first light blocking layers 32 and the first and second light blocking layers 32 and 33 is determined. Since the light transmittance is also the same.

In the mask structure of the present invention, in the first and second light blocking layers formed on the glass substrate to define line patterns such as repeated word lines or bit lines and large patterns such as contact landing, respectively, the second light blocking layer Since the light-transmitting area is provided in both sides, the light-transmitting area per unit area between the first light-shielding layer and the first and second light-shielding layers is the same, so that the light transmittances of all parts are the same, thereby improving the reliability of the device.

Claims (1)

A transparent substrate on which a plurality of conductive line regions and pattern regions larger than the conductive lines are defined; A plurality of first light blocking layers formed on the transparent substrate of the conductive line regions; And a plurality of second light blocking layers formed on both sides of the first light blocking layer on the transparent substrate of the pattern areas larger than the conductive line, and having light transmitting portions in both sides thereof.