KR19990009728A - Method of removing photoresist of semiconductor device - Google Patents

Abstract

The present invention relates to a method for removing a photosensitive film of a semiconductor device, and the process time is reduced by removing the remaining photosensitive film pattern by a plasma etching process using a mixed gas of oxygen and nitrogen oxide after selective etching of the insulating film using the photosensitive film pattern as a mask. It can be effected.

Description

Method of removing photoresist of semiconductor device

The present invention relates to a method for removing a photosensitive film, and more particularly, to a method for removing a photosensitive film of a semiconductor device capable of reducing the photosensitive film removal time by a plasma etching method using a mixed gas of oxygen and nitrogen oxides.

Generally, the photoresist film is used for selective etching of a predetermined layer, and when the etching of the predetermined layer is completed, the photoresist pattern remaining on the predetermined layer is removed. When the plasma etching process using oxygen (O ₂ ) gas is performed as the main component of the photoresist film, carbon and oxygen, which are the main components of the photoresist film, react with each other to be combined with carbon monoxide (CO) or carbon dioxide (CO ₂ ), and then to atmosphere. Is released into the air. Therefore, in order to remove the photoresist quickly, it is necessary to weaken it by applying a physical force to the bonding force of carbon strongly bound to the photoresist. That is, the etch rate with respect to the photoresist layer may be increased by waking the strong covalent bond structure combined with carbon by physical force.

Conventionally, a plasma etching method using oxygen gas has been carried out to remove the photoresist pattern. The etching rate is 400 to 500 m / s in about 1 minute, so the thickness of the photoresist pattern formed on the predetermined layer is about 10000 to 40000 m / s. It takes a long time of approximately 30 to 100 minutes to completely remove the pattern. Therefore, such a long process time has a problem of reducing the efficiency of the equipment.

Accordingly, the present invention provides a method for removing a photosensitive film of a semiconductor device capable of removing the remaining photosensitive film pattern by a plasma etching process using a mixed gas of oxygen and nitrogen oxides after selectively etching the insulating film using the photosensitive film pattern as a mask. The purpose.

In order to achieve the above object, the method of removing the photoresist film according to the present invention includes forming an insulating film on a silicon substrate that has undergone a predetermined manufacturing process, and then forming a photoresist pattern to selectively etch the insulating film. Selectively etching the insulating film using a mask, and removing the photoresist pattern formed on the insulating film by a plasma etching process using a mixed gas of oxygen and nitrogen oxides.

1A to 1C are cross-sectional views of a device for explaining a method of removing a photoresist film of a semiconductor device according to the present invention.

Symbol description for main parts of drawing

1 silicon substrate 2 insulating film

3: photosensitive film pattern

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1A to 1C are cross-sectional views of a device for explaining a method of removing a photoresist film. FIG. 1A shows an insulating film 2 formed on a silicon substrate 1 that has undergone a predetermined manufacturing process, and then selectively etched the insulating film 2. The state which formed the photosensitive film pattern 3 for implementation is shown.

FIG. 1B shows a state in which the insulating film 2 is selectively etched using the photosensitive film pattern 3 as a mask.

FIG. 1C illustrates a state in which the photosensitive film pattern 3 formed on the insulating film 2 is removed by an etching process. The etching process is a plasma etching method using a mixed gas having a mixing ratio of oxygen (O ₂ ): nitrogen oxide (N ₂ O) of approximately 10: 1, pressure of 450 to 550 mTorr, energy of 1400 to 1600 W, and 120 to 140 ° C. It is carried out at the temperature conditions of. Then, 1400 to 1600sccm of oxygen and 140 to 160sccm of nitric oxide gas are mixed and supplied into the reactor. In this case, since the etching selectivity of the photoresist pattern 3 is increased to approximately 1000 kPa / min, the etching rate of the photoresist pattern 3 may be significantly reduced.

As described above, according to the present invention, the selective etching of the insulating film using the photoresist pattern as a mask is performed, thereby removing the remaining photoresist pattern by a plasma etching process using a mixed gas of oxygen and nitrogen oxides. have.

Claims (2)

In the photosensitive film removal method of a semiconductor device, Forming an insulating film on a silicon substrate which has been subjected to a predetermined manufacturing process, and then forming a photoresist pattern to selectively etch the insulating film; Selectively etching the insulating layer using the photoresist pattern as a mask; Removing the photoresist pattern formed on the insulating layer by a plasma etching process using a mixed gas of oxygen and nitrogen oxides. The method of claim 1, The plasma etching process removes the photoresist of the semiconductor device, wherein the plasma etching process is performed at a pressure of 450 to 550 mTorr, an energy of 1400 to 1600 W, a temperature of 120 to 140 ° C., and a mixed gas of 10: 1 mixture of oxygen and nitrogen oxides. Way.