KR19980079099A - Target of Semiconductor Sputtering Equipment - Google Patents

Abstract

The present invention relates to a target of a semiconductor sputtering apparatus that releases material deposited on a wafer by physical impact.

The present invention is a target of a semiconductor sputtering apparatus in which a magnet is embedded in a target emitting a material to be deposited on a wafer by physical impact, and includes a plurality of magnets separated by a magnetic shielding film inside the target. It is characterized by.

Therefore, since the target is uniformly etched, the service life of the target can be extended, and a uniform film quality can be deposited on the wafer.

Description

Target of Semiconductor Sputtering Equipment

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a target of a semiconductor sputtering apparatus, and more particularly to a target of a semiconductor sputtering apparatus for releasing a substance deposited on a wafer by physical impact.

In the sputtering process, argon (Ar) gas is injected into the sputter chamber where high voltage is applied at both ends to make plasma, and argon cation (Ar ⁺ ) having high kinetic energy is generated. It collides with a rotating target to bounce off a target material and deposit it on a wafer.

1A is a schematic cross-sectional view of a target of a conventional semiconductor sputtering apparatus in which a sputtering process is performed, and FIG. 1B is a plan view.

Referring to (a) and (b) of FIG. 1, a heart-shaped magnet 12 is embedded inside a low-profile cylindrical target 10 made of aluminum (Al), titanium (Ti), or the like. It is. As the target 10 is rotated during the sputtering process, a magnetic field is formed around the target 10.

Therefore, during the sputtering process, argon cations in the plasma state collide with the rotating target 10 under the influence of the magnetic field formed around the target 10. Accordingly, the target material such as aluminum and titanium constituting the target 10 is bounced off the target 10 and deposited on the wafer.

However, since only one magnet 12 is inherent in the target 10, the uniformity of the magnetic flux of the magnetic field formed by the magnet 12 is low, so that the argon cation is the target 10. As shown in FIG. 2, the predetermined area of the target 10 is severely etched as it continuously collides with the predetermined area of the target area, thereby shortening the service life of the target 10.

In addition, there is a problem that the uniformity of the film deposited on the wafer is lowered because the target material such as aluminum, which is thrown out of the predetermined region of the target 10, is concentrated on the predetermined region of the wafer.

SUMMARY OF THE INVENTION An object of the present invention is to provide a target of a semiconductor sputtering apparatus in which the surface of the target can be etched uniformly.

Another object of the present invention is to provide a target of a semiconductor sputtering apparatus capable of depositing a film of high uniformity on a wafer.

FIG. 1A is a schematic cross-sectional view of a target of a conventional semiconductor sputtering apparatus, and FIG. 1B is a plan view.

2 is a cross-sectional view showing the degree of etching of the target of the conventional semiconductor sputtering equipment.

Figure 3 (a) is a schematic cross-sectional view showing an embodiment of a target of the semiconductor sputtering equipment according to the present invention, Figure 3 (b) is a plan view.

4 is a cross-sectional view showing the degree of etching of the target of the semiconductor sputtering apparatus according to the present invention.

※ Explanation of symbols for main parts of drawing

10, 20: target 12, 22: magnet

24: magnetic shield

The target of the semiconductor sputtering equipment according to the present invention for achieving the above object is a target of the semiconductor sputtering equipment in which a magnet is embedded in the target to release the material to be deposited on the wafer by physical impact, the target inside It is characterized by consisting of a plurality of magnets separated by a magnetic shielding film.

Λ-metal may be used as the magnetic barrier film, and the magnet may have a heart shape.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Figure 3 (a) is a schematic cross-sectional view of the target of the semiconductor sputtering equipment according to the present invention, Figure 3 (b) is a plan view.

Referring to FIG. 3, three magnets 22 in the shape of hearts are embedded in the target 20 made of a material such as aluminum, titanium, and the like while rotating during the sputtering process. A magnetic shielding film 24 such as λ-metal is formed between the magnet 22 and the magnet 22.

Therefore, during the sputtering process, argon cations in the plasma state collide with the target 20 under the influence of the magnetic field formed around the rotating target 20. Accordingly, the target material such as aluminum and titanium constituting the target 20 bounces off and is deposited on the wafer. At this time, since the magnetic shielding film 24 such as λ-metal is embedded in the target 20, the magnetic fields formed by the three magnets 22 do not influence each other, and the magnetic flux is formed around the target 20. A magnetic field of uniform density is formed.

Accordingly, the surface of the target 20 is uniformly etched as shown in FIG. 4 as the cation in the plasma state affected by the magnetic field contacts the surface of the target 20. In addition, a target material such as aluminum and titanium that bounces off the target 20 is uniformly deposited on the wafer.

Therefore, according to the present invention, since the target is uniformly etched during the continuous sputtering process, it is possible to extend the service life of the target and to deposit a uniform film on the wafer.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (3)

In the target of the semiconductor sputtering equipment in which a magnet is embedded in the target to release the material to be deposited on the wafer by physical impact, The target of the semiconductor sputtering equipment, characterized in that the internal structure of the plurality of magnets are separated by a magnetic shielding film. The method of claim 1, [Lambda] -metal is used as the magnetic shielding film. The method of claim 2, The magnet is a target of the semiconductor sputtering equipment, characterized in that the heart (Heart) shape.