KR19980058444A - DFB laser diode manufacturing method - Google Patents

Abstract

The present invention relates to a method for manufacturing a DFB laser diode, and more particularly, to a technique for preventing the occurrence of the FEBRY-PEROT mode. In the present invention, in manufacturing the DFB laser diode, the manufacturing direction of the grating is inclined to about a degree from the cleavage direction [100] of the substrate, so that the FEBRY-PEROT mode can be easily removed.

Description

DFB laser diode manufacturing method.

The present invention relates to a method for manufacturing a DFB laser diode, and more particularly, to a method for removing the FEBRY-PEROT mode generated in the DFB laser diode manufacturing process.

In general, the manufacturing of grating is essential for manufacturing a DFB laser diode, and in particular, to manufacture a multi-wavelength DFB laser, a key element of an optical communication system that transmits a large amount of data at high speed. The making of is very important.

In the prior art DFB laser diode having such a grating, a grating is manufactured mainly in the [100] direction in the compound semiconductor substrate, and then a double heterojunction structure is grown on the grating using MOCVD equipment. Then, in the state in which the current injection stripe (STRIPE) is manufactured in the vertical direction, the resultant is wrapped thinly, and the wrapped DFB laser diode structure is cleaved, that is, cut in accordance with a specific crystal direction to make the DFB laser. Fabricate a diode chip.

However, when operating the DFB laser diode manufactured by the above method, there is a problem that not only the DFB mode but also the FEBRY-PEROT mode is generated. To solve this problem, the cutting surface is coated or the cutting surface is inclined. Since the etching process is further performed, the process has a complicated problem.

Accordingly, the present invention provides a method for manufacturing a DFB laser diode capable of suppressing the occurrence of the F / P mode by manufacturing the grating by producing the grating by inclining within about [100] direction which is the crystal direction of the compound semiconductor substrate when producing the grating. The purpose.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a manufacturing direction of a gratin according to the present invention.

Explanation of symbols on the main parts of the drawings

1: grating, 2: wave guide layer, 3: cleavage

The above purpose is

Manufacturing a grating in a specific crystal direction on the compound semiconductor substrate; Growing a double release junction structure over the grating; Manufacturing a current injection stripe in a vertical direction; Depositing metal and dielectric films; Wrapping the result; In the DFB laser diode manufacturing method comprising the step of cleaving the result in a specific direction,

The grating is a method of manufacturing a DFB laser diode characterized in that the inclined to about 10 ° from the [100] series in a separate direction.

According to the present invention, the generation of the mode due to the F / P resonator can be suppressed because the stripe direction and the cleaved substrate direction are different.

EXAMPLE

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

In order to manufacture a DFB laser diode, although not shown, first, a grating 1 is manufactured on a compound semiconductor substrate. At this time, the manufacturing direction of the grating (1) is produced by inclining within about 10 ° from the [100] series of the cleavage direction (2) of the laser diode chip completed through the subsequent process. On the other hand, if the inclination angle of the produced glenting is small, it is difficult to remove the F / P mode, if too large will cause a process problem.

Subsequently, after growing a structure for a laser diode composed of an optical guide layer, an active layer and a clad layer on the grating, after forming a dielectric film pattern as an etching mask, the clad layer and the active layer are etched. Then, after regrowth, the etching mask is removed and the final growth is performed.

Subsequently, the grown substrate is subjected to a metal process, a dielectric film deposition process, and a lapping process to manufacture a DFB laser diode, and the finished DFB laser diode is cut along a specific crystal direction and separated into chips.

In the above, as shown in FIG. 1, the generation of the mode by the F / P resonator is different because the direction of the wave guide 2 and the cleavage direction in which the substrate is cut in the specific crystal direction are different by the inclination of the initial grating 1. This is suppressed.

As described above, the DFB laser diode manufacturing method of the present invention can be produced by inclining the manufacturing direction of the grating within about 10 from the [100] series which is the cleavage direction, thereby suppressing the mode caused by the F / P resonator, and the DFB By omitting the anti-reflective film forming process for reducing the F / P mode performed in the laser diode manufacturing process, the manufacturing cost can be reduced and noise generation due to the reflected light can be reduced. Meanwhile, although specific embodiments of the present invention have been described and illustrated, modifications and variations can be made by those skilled in the art. Accordingly, the following claims are to be understood as including all modifications and variations as long as they fall within the true spirit and scope of the present invention.

Claims (1)

Manufacturing a grating in a specific crystal direction on the compound semiconductor substrate; Growing a double release junction structure over the grating; Manufacturing a current injection stripe in a vertical direction; Depositing metal and dielectric films; Wrapping the result; In the DFB laser diode manufacturing method comprising the step of cleaving the result in a specific direction, The grating is a manufacturing method of the DFB laser diode, characterized in that the inclined to about 10 from the cleavage direction [100] series.