KR19980055949A - Wafer cleaning method - Google Patents
Wafer cleaning method Download PDFInfo
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- KR19980055949A KR19980055949A KR1019960075186A KR19960075186A KR19980055949A KR 19980055949 A KR19980055949 A KR 19980055949A KR 1019960075186 A KR1019960075186 A KR 1019960075186A KR 19960075186 A KR19960075186 A KR 19960075186A KR 19980055949 A KR19980055949 A KR 19980055949A
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- wafer
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- cleaning method
- spraying
- brush
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B5/00—Drying solid materials or objects by processes not involving the application of heat
- F26B5/08—Drying solid materials or objects by processes not involving the application of heat by centrifugal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Abstract
본 발명은 웨이퍼의 뒷면(back side) 오염이 심한 공정 직후에 웨이퍼의 뒷면을 세정하기 위한 장비로 두 개의 가는 노즐을 통산 순수 세정(DI-water rinse)과, 적절한 나일론 브러쉬(nylon brush)와, 적정 시간의 30~40kgf/㎤ 압력을 가진 순수 분사(jet DI-water)를 이용하여 웨이퍼의 뒷면 오염을 현저하게 제거할 수 있는 웨이퍼 세정 방법에 관한 것이다.The present invention is a device for cleaning the back side of a wafer immediately after a high back side contamination process, using two thin nozzles, a DI-water rinse, an appropriate nylon brush, The present invention relates to a wafer cleaning method capable of remarkably removing backside contamination of a wafer by using jet DI-water having an appropriate time of 30 to 40 kgf / cm 3.
Description
본 발명은 웨이퍼 세정 방법에 관한 것으로, 특히 디램(DRAM)을 비롯한 반도체 소자의 모든 공정 진행중 웨이퍼의 뒷면(back side) 오염이 심한 공정 직후에 웨이퍼의 뒷면을 세정하기 위한 장비를 이용하여 웨이퍼의 뒷면 오염을 현저하게 제거할 수 있는 웨이퍼 세정 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer cleaning method. In particular, the backside of a wafer using equipment for cleaning the backside of a wafer immediately after a process in which the backside contamination of the wafer is severe during all processes of semiconductor devices including DRAM. The present invention relates to a wafer cleaning method capable of significantly removing contamination.
디바이스(Device)의 고집적화와 웨이퍼(wafer)의 대구경화에 따라 장비들은 배치 타입(batch type)에서 점점 싱글 타입(single type)으로 전환되가고 있어서 장비 내의 웨이퍼 이송(wafer transportation) 및 공정 진행 과정에서 웨이퍼 이면이 로보트 암(robot arm), 플레이트(plate), 척(chuck)과 같은 부분에 접촉하는 기회가 많아져 이면 오염에 대한 연구가 활발해지고 있다. 이러한 이면 오염들은 배치타입(batch type)으로 진행되는 세정이나 열 공정에서 웨이퍼 전면에 전사된다는 사실은 이미 여러 편의 문헌에서 보고된 바 있다. 최근 이러한 웨이퍼 이면에 오염된 파티클(particle), 불순물 금속(metallic impurities)에 대한 세정(clean)화 필요성에 부응하여 브러쉬(brush)나 D-소닉 스크러빙(DI Water-sonic scrubbing)을 이용한 이면 스크러브(scrub) 세정 도입이 중요한 해결 수단으로 부각되고 있다. 실제로 싱글 타입(single type)의 화학기상증착(CVD) 및 기타 공정에서 웨이퍼를 챔버(chamber) 내에 로딩(loading) 및 언로딩(unloading)시 뒷면(Back side)에 부착되는 오염 물질들과 챔버 내의 척(chuck)에 의하여 발생되는 수만 개의 파티클 및 오염 물질들은 후속 공정인 포토 리소그라피 공정과 식각(Etch) 공정에서 초점의 흐려짐(Defocusing) 및 결함(Defect) 유발에 기인할 뿐만 아니라 습식 세정(wet cleaning) 공정에서조차도 제거하기가 어려운 단점이 있다.As devices become more integrated and larger wafers become larger, equipment is increasingly shifting from batch type to single type, resulting in wafer transportation and process progress. There are many opportunities for the back side to come in contact with parts such as robot arms, plates, and chucks. It has already been reported in the literature that these backside contaminations are transferred to the front surface of the wafer in a cleaning or thermal process that proceeds in a batch type. Recently, in order to meet the necessity of cleaning the contaminated particles and metallic impurities on the back surface of the wafer, the back scrub using brush or D water-sonic scrubbing Introduction of scrubbing is emerging as an important solution. In fact, in single-type chemical vapor deposition (CVD) and other processes, contaminants that adhere to the back side during loading and unloading of the wafer into the chamber and in the chamber Tens of thousands of particles and contaminants generated by the chuck are wet cleaning as well as due to defocusing and defect in focus during subsequent photolithography and etching processes. ) Is difficult to remove even in the process.
싱글 타입(Single type)의 화학기상증착(CVD) 및 기타 공정에서 웨이퍼를 챔버내에 로딩 및 언로딩시 뒷면에 부착되는 오염 물질들과 챔버 내의 척에 의하여 발생되는 파티클 및 오염 물질들은 후속 공정인 포토 리소그라피 공정과 식각 공정에서 초점의 흐려짐 및 결함 유발에 기인하거나 배치 타입(batch type)의 열 공정 및 습식 세정 공정에서 웨이퍼의 뒷면 오염으로부터 웨이퍼 전면에 전달된다.In single-type chemical vapor deposition (CVD) and other processes, the contaminants attached to the back during loading and unloading of the wafer into the chamber and the particles and contaminants generated by the chuck in the chamber are subsequently processed. In lithography and etching processes, due to fogging of focal spots and defects, or transferred to the front of the wafer from backside contamination of the wafer in a batch type thermal process and wet cleaning process.
따라서, 본 발명은 웨이퍼의 뒷면 오염이 심간 공정 직후에 백-사이드 스크러브 장비로 두 개의 가는 노즐을 통한 순수 세정(DI-water rinse)과, 적절한 나일론 브러쉬(nylon brush)와, 적정 시간의 30~40kgf/㎤ 압력을 가진 순수 분사(jet DI-water)를 이용하여 웨이퍼의 뒷면 오염을 현저하게 제거할 수 있는 웨이퍼 세정 방법을 제공하는데 그 목적이 있다.Thus, the present invention provides that the back-side contamination of the wafer is directly followed by a di-water rinse through two thin nozzles with back-side scrubber equipment, an appropriate nylon brush, and an appropriate time of 30 minutes. It is an object of the present invention to provide a wafer cleaning method capable of remarkably removing backside contamination of a wafer by using jet DI-water having a pressure of ˜40 kgf / cm 3.
상술한 목적을 달성하기 위한 본 발명에 따른 웨이퍼 세정 방법은 싱글 타입의 화학기상증착 및 기타 공정에서 웨이퍼를 챔버 내에 로딩 및 언로딩시 웨이퍼의 뒷면에 부착되는 오염 물질들과 챔버 내의 척에 의하여 발생되는 파티클 및 오염 물질들이 많이 생성되는 모든 공정에 있어서, 웨이퍼의 뒷면 오염이 심한 모든 공정 직후 웨이퍼의 뒷면 세정용 챔버에 로딩하여 1차적으로 웨이퍼를 회전시킴과 동시에 H2O2+순수 또는 순수만을 두 개의 노즐을 통해 5~10sec 시간 동안 분사시키면서 웨이퍼를 세정하는 단계와, 상기 회전하는 웨이퍼를 순수 분사 노즐과 동시에 브러쉬를 사용하여 2차로 15~25sec 시간 동안 분사시키면서 웨이퍼를 세정하는 단계와, 상기 회전하는 웨이퍼를 순수 분사 노즐과 동시에 고압력 순수 분사 노즐을 통해 분사시키면서 15~20sec 시간 동안 분사시키면서 웨이퍼를 세정한 후 고속의 회전으로 웨이퍼를 건식으로 건조시키는 단계로 이루어진 것을 특징으로 한다.Wafer cleaning method according to the present invention for achieving the above object is generated by the chuck in the chamber and the contaminants attached to the back of the wafer when loading and unloading the wafer in the chamber in a single type of chemical vapor deposition and other processes In all processes that produce a lot of particles and contaminants, the wafer is loaded into the chamber for cleaning the back side of the wafer immediately after all the back side contamination of the wafer, and the wafer is rotated first, and only H 2 O 2 + pure or pure Cleaning the wafer by spraying two nozzles for 5 to 10 seconds, and cleaning the wafer by spraying the rotating wafer with a pure spray nozzle for a second time using a brush for 15 to 25 seconds. 15-20s while rotating wafer is sprayed through high pressure pure spray nozzle simultaneously with pure spray nozzle After cleaning the wafer while spraying for ec time it is characterized in that the step consisting of drying the wafer at a high speed of rotation.
도 1(a) 내지 도 1(c)는 본 발명에 따른 웨이퍼 세정 방법을 설명하기 위해 도시한 구조도.1 (a) to 1 (c) are structural diagrams shown for explaining the wafer cleaning method according to the present invention.
도 2(a) 및 도 2(b)는 비피에스지(BPSG) 또는 피에스지(PSG) 화학기상증착(CVD) 장비에서 진행한 웨이퍼의 뒷면을 순수 세정하기 전과 순수 세정한 후의 결과를 나타낸 도면.2 (a) and 2 (b) show the results before and after pure cleaning of the back surface of a wafer processed by BPSG (BPSG) or PSG (PSG) chemical vapor deposition (CVD) equipment.
도 3(a) 및 도 3(b)는 피라냐(piranha)(H2SO4+H2O2=4 : 1) 세정 전과 세정한 후의 파티클 맵(particle map)결과를 나타낸 도면.3 (a) and 3 (b) are diagrams showing particle map results of piranha (H 2 SO 4 + H 2 O 2 = 4: 1) before and after washing.
도 4는 순수 세정(DI-WATER SCRUB) 기술로 중금속을 짧은 시간 내에 효과적으로 제거한 결과를 나타낸 도면.4 is a diagram showing the result of effectively removing heavy metals in a short time by a DI-WATER SCRUB technology.
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
1 : 웨이퍼2 및 3 : 분사 노즐1: wafer 2 and 3: spray nozzle
4 : 브러쉬5 : 고압력 순수 분사 노즐4: brush 5: high pressure pure spray nozzle
본 발명을 첨부된 도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
도 1(a) 내지 도 (1c)는 본 발명에 따른 웨이퍼 세정 방법을 설명하기 위해 도시한 구조도이다.1 (a) to 1 (c) are structural diagrams shown for explaining the wafer cleaning method according to the present invention.
도 1(a)에서는 웨이퍼의 뒷면(Back side)오염이 심한 모든 공정 직후 웨이퍼의 뒷면 세정(Back-side scrub)용 챔버에 웨이퍼(1)를 로딩하여 1차적으로 웨이퍼(1)를 1000~1500rpm 으로 회전(spin)시킴과 동시에 H2O2+순수(DI water) 또는 순수(DI-water) 만을 두 개의 분사 노즐(2 및 3)을 통해 5~10sec 시간 동안 분사시키면서 웨이퍼(1)를 세정(scrubbing)한다.In FIG. 1 (a), the wafer 1 is loaded into the chamber for back-side scrub of the wafer immediately after all the back-side contamination of the wafer, and the wafer 1 is first loaded at 1000 to 1500 rpm. While cleaning the wafer 1 while spraying only H 2 O 2 + DI water or DI water through the two spray nozzles 2 and 3 for 5 to 10 seconds. (scrubbing)
도 1(b)에서는 1000~1500rpm 으로 회전하는 웨이퍼를 순수(DI-water) 분사 노즐(3)과 동시에 브러쉬(4)를 사용하여 2차로 15~25sec 시간 동안 분사시키면서 웨이퍼(1)를 세정(scrubbing)한다.In FIG. 1 (b), the wafer 1 is cleaned while spraying the wafer rotating at 1000 to 1500 rpm for a second time using a brush 4 simultaneously with a brush 4 for 15 to 25 sec. scrubbing).
도 1(c)에서는 1000~1500rpm으로 회전하는 웨이퍼를 순수(DI-water) 분사 노즐(3)과 동시에 30~40kgf/㎤ 고압력 순수 분사(jet DI-water) 노즐(5)을 통해 분사시키면서 15~20sec 시간 동안 분사시키면서 웨이퍼(1)를 세정(scrubbing) 한다. 이후, 3000~4000rpm의 회전으로 웨이퍼를 건조시키게 된다.In FIG. 1C, the wafer rotating at 1000 to 1500 rpm is sprayed through a 30 to 40 kgf / cm3 high pressure jet DI-water nozzle 5 simultaneously with a DI water spray nozzle 3. The wafer 1 is scrubbed while being sprayed for ˜20 sec. Thereafter, the wafer is dried at a rotation of 3000 to 4000 rpm.
상술한 바와 같이 본 발명은 우선 뒷면 오염이 심한 공정 직후에 뒷면을 세정하기 위한 장비로 두 개의 가는 노즐을 통한 순수 세정(DI-water rinse)과, 적절한 나일론 브러쉬(nylon brush)와, 적정 시간의 30~40kgf/㎤ 압력을 가진 고압력 순수 분사(jet DI-water)를 이용하여 웨이퍼의 뒷면 오염을 낱장씩 세정(scrubbing)하기 때문에 배치 타입의 세정 공정에서 웨이퍼의 뒷면 오염물이 웨이퍼 전면에 전사될 염려가 없어서 파티클 및 오염물을 제거하기가 용이하여 디바이스의 수율 증대에 기여할 수 있다.As described above, the present invention is a device for cleaning the back side immediately after a high backside contamination process, using a di-water rinse through two thin nozzles, an appropriate nylon brush, and a suitable time. High-pressure jet DI-water with 30 to 40 kgf / cm3 pressure scrubbing the backside contamination of the wafer sheet by sheet, so that the backside contamination of the wafer can be transferred to the front surface of the wafer in batch type cleaning process Free of particles and contaminants can contribute to increased device yield.
실제로 비피에스지(BPSG) 또는 피에스지(PSG) 화학기상증착(CVD)장비에서 진행한 웨이퍼의 뒷면을 세정하기 전과 세정한 후의 결과를 도 2(a) 및 도 (2b)에 나타냈고, 피라냐(piranha)(H2SO4+H2O2=4 : 1) 세정 전과 세정한 후의 파티클 맵(particle map)결과를 도 3(a) 및 도 (3b)에 나타내었다. 또한, 평탄화를 위한 비피에스지(BPSG)와 캐패시터(CAPACITOR) 형성시 코어(CORE)로 이용하는 피에스지(PSG)를 형성할 때, 컨베어 시스템(CONVEYOR SYSTEM)으로 움직이면서 소정의 두께만큼 증착하게 되는데 이 경우 웨이퍼의 뒷면에 Cr, Mn, Ni, Fe 등과 같은 중금속 오염이 심하게 되어 이러한 중금속들은 소자의 문턱 전압 (Vt)을 쉬프트(SHIFT) 시키거나 리플래쉬 특성을 저하 시키게 된다. 본 기술은 이를 케미컬(CHEMICAL)이 아닌 순수 세정(DI-WATER SCRUB)기술로 이러한 중금속을 짧은 시간 내에 효과적으로 제거할 수 있다. 중금속 오염이 제거된 결과를 도 4에 나타내었다.In fact, the results of before and after cleaning the back side of the wafer, which were carried out in BPSG or PSG chemical vapor deposition (CVD) equipment, are shown in FIGS. piranha) (H 2 SO 4 + H 2 O 2 = 4: 1) Particle map results before and after washing are shown in FIGS. 3 (a) and 3 (b). In addition, when forming BPSG for planarization and PSG to be used as a core when forming capacitors, it is deposited to a predetermined thickness while moving to a conveyor system. Heavy metal contamination such as Cr, Mn, Ni, Fe, etc. on the back side of the wafer is severe, and these heavy metals shift the threshold voltage (Vt) of the device or degrade the refresh characteristics. This technology can effectively remove such heavy metals in a short time by DI-WATER SCRUB technology, not chemical. 4 shows the result of removing heavy metal contamination.
Claims (6)
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KR1019960075186A KR100417648B1 (en) | 1996-12-28 | 1996-12-28 | Wafer cleaning method |
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KR1019960075186A KR100417648B1 (en) | 1996-12-28 | 1996-12-28 | Wafer cleaning method |
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KR19980055949A true KR19980055949A (en) | 1998-09-25 |
KR100417648B1 KR100417648B1 (en) | 2004-04-06 |
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KR1019960075186A KR100417648B1 (en) | 1996-12-28 | 1996-12-28 | Wafer cleaning method |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040025162A (en) * | 2002-09-18 | 2004-03-24 | 아남반도체 주식회사 | Method for preventing helume error in the metal-etch process |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04363022A (en) * | 1991-06-06 | 1992-12-15 | Enya Syst:Kk | Cleaning device for wafer mounter |
KR0186043B1 (en) * | 1992-05-28 | 1999-04-15 | 이노우에 아키라 | Method for scrubbing and cleaning substrate |
JPH06120192A (en) * | 1992-10-01 | 1994-04-28 | Sumitomo Precision Prod Co Ltd | Both side scrubbing washing device |
JP2877216B2 (en) * | 1992-10-02 | 1999-03-31 | 東京エレクトロン株式会社 | Cleaning equipment |
KR0135394B1 (en) * | 1993-03-18 | 1998-04-25 | 이시다 아키라 | Substrate treating apparatus |
KR960013144B1 (en) * | 1993-03-29 | 1996-09-30 | 엘지반도체 주식회사 | Particle removing apparatus of wafer rearface |
-
1996
- 1996-12-28 KR KR1019960075186A patent/KR100417648B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040025162A (en) * | 2002-09-18 | 2004-03-24 | 아남반도체 주식회사 | Method for preventing helume error in the metal-etch process |
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KR100417648B1 (en) | 2004-04-06 |
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