KR19980051969A - Impurity Analysis Method of Semiconductor Manufacturing Process Equipment - Google Patents
Impurity Analysis Method of Semiconductor Manufacturing Process Equipment Download PDFInfo
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- KR19980051969A KR19980051969A KR1019960070896A KR19960070896A KR19980051969A KR 19980051969 A KR19980051969 A KR 19980051969A KR 1019960070896 A KR1019960070896 A KR 1019960070896A KR 19960070896 A KR19960070896 A KR 19960070896A KR 19980051969 A KR19980051969 A KR 19980051969A
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Abstract
본 발명은 가스공급라인 및 공정챔버 상에 흡착된 불순물을 용이하게 분석할 수 있는 반도체제조 공정설비의 불순물 분석방법에 관한 것이다.The present invention relates to an impurity analysis method of a semiconductor manufacturing process facility that can easily analyze impurities adsorbed on a gas supply line and a process chamber.
본 발명은, 가스공급용 부품이 설치된 반응가스공급라인 또는 공정챔버에 선택적으로 입자계수기, 수분농도분석기, 산소농도분석기, 이동식 대기압이온화질량분석기를 설치하는 단계; 상기 반응가스공급라인 또는 공정챔버에 운반용가스를 공급하는 단계; 및 상기 운반용가스에 의해서 상기 가스공급용 부품 또는 공정챔버에서 제거된 불순물과 혼합된 상기 운반용가스를 선택적으로 설치된 상기 입자계수기, 수분농도분석기, 산소농도분석기, 이동식 대기압이온화질량분석기를 이용하여 분석하는 단계로 이루어짐을 특징으로 한다.The present invention includes the steps of selectively installing a particle counter, water concentration analyzer, oxygen concentration analyzer, a mobile atmospheric ionization mass spectrometer in a reaction gas supply line or a process chamber in which gas supply parts are installed; Supplying a carrier gas to the reaction gas supply line or process chamber; And analyzing the transport gas mixed with impurities removed from the gas supply part or the process chamber by the transport gas using the particle counter, water concentration analyzer, oxygen concentration analyzer, and mobile atmospheric ionization mass spectrometer. It is characterized by consisting of steps.
따라서, 분석공정의 분석결과에 신뢰성을 가질 수 있는 효과가 있다.Therefore, there is an effect that can have a reliability in the analysis results of the analysis process.
Description
본 발명은 반도체제조 공정설비의 불순물 분석방법에 관한 것으로서, 보다 상세하게는 가스공급라인 및 공정챔버 상에 흡착된 불순물을 용이하게 분석할 수 있는 반도체제조 공정설비의 불순물 분석방법에 관한 것이다.The present invention relates to an impurity analysis method of a semiconductor manufacturing process equipment, and more particularly, to an impurity analysis method of a semiconductor manufacturing process equipment capable of easily analyzing impurities adsorbed on a gas supply line and a process chamber.
통상, 반도체소자 제조공정에서는 반응성, 부식성, 유독성 등을 가진 여러종류의 가스가 필터, 유량조절기, 밸브 등의 많은 부품이 설치된 가스공급라인을 통해서 공정챔버로 공급되어 웨이퍼 상에 산화막, 질화막, 금속막 등을 형성하고 있다.In the semiconductor device manufacturing process, various types of gases having reactivity, corrosiveness, and toxicity are supplied to the process chamber through a gas supply line in which many parts such as a filter, a flow regulator, and a valve are installed. A film or the like.
그러므로, 가스공급라인에 설치된 부품 및 공정챔버에 불순물이 흡착되어 있으면, 공정불량을 야기할 수 있으므로 정기적으로 분석공정을 진행하고 있다.Therefore, if impurities are adsorbed on the components and the process chamber installed in the gas supply line, the process may cause a defect, so the analysis process is carried out regularly.
종래의 반도체제조 공정설비의 불순물 분석방법은, 먼저 작업자가 가스공급라인 상에 설치된 필터, 밸브, 유량조절기 등의 가스공급용 부품을 개별적으로 대기압이온화질량분석기(Atmospheric pressure ionization mass spectroscope) 등의 여러가지 분석기구가 설치된 분석실로 이동시킨 후, 운반가스를 이용하여 가스공급용 부품에 흡착된 이온성 불순물, 분자성 불순물, 금속성 불순물, 수분 등의 존재여부를 분석하는 분석공정을 진행한다.The impurity analysis method of the conventional semiconductor manufacturing process equipment includes various methods, such as an atmospheric pressure ionization mass spectroscope, in which an operator individually separates gas supply parts such as filters, valves, and flow regulators installed on a gas supply line. After moving to an analysis chamber in which an analysis apparatus is installed, an analysis process for analyzing the presence of ionic impurities, molecular impurities, metallic impurities, moisture, etc. adsorbed to the gas supplying part using a carrier gas is performed.
또한, 반도체소자 제조공정이 진행되는 공정챔버의 분석은, ppm 단위까지 분석할 수 있는 잔류가스분석기(Residual gas analyzer)를 공정챔버와 연결한 후, 외부로 배기되지 못하고 공정챔버 내부에 잔류하는 잔류가스 및 공정챔버로 유입된 반응가스의 반응에 의해서 생성된 반응생성물 등의 존재여부를 분석하고 있다.In addition, the analysis of the process chamber in which the semiconductor device manufacturing process is performed is performed by connecting a residual gas analyzer capable of analyzing up to ppm unit with the process chamber, and remaining residual inside the process chamber without being exhausted to the outside. The presence of the reaction product generated by the reaction of the gas and the reaction gas introduced into the process chamber is analyzed.
따라서, 밸브 등의 가스공급용 부품에 대한 분석공정이 진행될 때는 공정설비가 장기간 운전정지되어 시간적, 경제적 손실이 발생하고, 분석공정이 실제공정 환경이 아닌 분석실에서 이루어지므로 인해서 분석공정의 분석결과에 신뢰성이 결여되는 문제점이 있었다.Therefore, when the analytical process for gas supply parts such as valves is in progress, the process equipment is shut down for a long time, resulting in time and economic loss, and the analytical process is performed in the analytical room instead of the actual process environment. There was a problem of lack of reliability.
또한, 반도체소자 제조공정이 진행되는 공정챔버는 단지 ppm 단위까지만 분석이 가능한 잔류가스분석기를 이용하여 분석이 이루어지므로 ppm 단위 이하의 불순물에 대해서는 전혀 분석할 수 없는 문제점이 있었다.In addition, since the process chamber in which the semiconductor device manufacturing process is performed is analyzed using a residual gas analyzer capable of analyzing only ppm, there is a problem in that impurities of less than ppm cannot be analyzed at all.
본 발명의 목적은, 반도체소자 제조공정이 진행되는 공정설비를 장기간 운전정지시키지 않고 가스공급용 부품에 대한 분석공정을 진행할 수 있는 반도체제조 공정설비의 불순물 분석방법을 제공하는 데 있다.An object of the present invention is to provide an impurity analysis method of a semiconductor manufacturing process equipment capable of proceeding an analysis process for a gas supply component without prolonged shutdown of the process equipment through which the semiconductor device manufacturing process is performed.
본 발명의 다른 목적은, 반도체소자 제조공정이 진행되는 공정환경에서 분석공정을 진행하여 분석공정의 분석결과에 신뢰성을 가질 수 있는 반도체제조 공정설비의 불순물 분석방법을 제공하는 데 있다.It is another object of the present invention to provide an impurity analysis method of a semiconductor manufacturing process facility which is reliable in an analysis result of an analysis process by performing an analysis process in a process environment in which a semiconductor device manufacturing process is performed.
본 발명의 또 다른 목적은, 공정챔버 내부에 잔류하는 1ppm 단위 이하의 불순물에 대해서도 분석할 수 있는 반도체제조 공정설비의 불순물 분석방법을 제공하는 데 있다.Another object of the present invention is to provide an impurity analysis method of a semiconductor manufacturing process equipment that can analyze impurities of 1 ppm or less units remaining in the process chamber.
상기 목적을 달성하기 위한 본 발명에 따른 반도체제조 공정설비의 불순물 분석방법은, 가스공급용 부품이 설치된 반응가스공급라인 또는 공정챔버에 선택적으로 입자계수기, 수분농도분석기, 산소농도분석기, 이동식 대기압이온화질량분석기를 설치하는 단계; 상기 반응가스공급라인 또는 공정챔버에 운반용가스를 공급하는 단계; 및 상기 운반용가스에 의해서 상기 가스공급용 부품 또는 공정챔버에서 제거된 불순물과 혼합된 상기 운반용가스를 선택적으로 설치된 상기 입자계수기, 수분농도분석기, 산소농도분석기, 이동식 대기압이온화질량분석기를 이용하여 분석하는 단계로 이루어진다.Impurity analysis method of the semiconductor manufacturing process equipment according to the present invention for achieving the above object, Particle counter, moisture concentration analyzer, oxygen concentration analyzer, mobile atmospheric pressure ionization selectively in the reaction gas supply line or process chamber in which gas supply parts are installed Installing a mass spectrometer; Supplying a carrier gas to the reaction gas supply line or process chamber; And analyzing the transport gas mixed with impurities removed from the gas supply part or the process chamber by the transport gas using the particle counter, water concentration analyzer, oxygen concentration analyzer, and mobile atmospheric ionization mass spectrometer. Consists of steps.
이하, 본 발명의 구체적인 실시예를 상세히 설명한다.Hereinafter, specific embodiments of the present invention will be described in detail.
본 발명에 따른 반도체제조 공정설비의 불순물 분석방법은, 먼저, 작업자가 반응가스가 통과하는 가스공급라인 상에 설치된 밸브, 유량조절기 등의 특정 가스공급용 부품 후단에 0.01 ㎛ 이상의 크기를 가지는 파티클의 갯수를 카운트(Count)할 수 있는 입자계수기, 2000 ppb 이하의 수분의 농도를 검출할 수 있는 수분농도분석기, 10 ppb 이하의 산소의 농도를 검출할 수 있는 산소농도분석기, 1 ppb 이하의 불순물을 분석할 수 있는 이동식 대기압이온화질량분석기 등의 분석설비를 선택적으로 설치한다.Impurity analysis method of the semiconductor manufacturing process equipment according to the present invention, first, the operator of the particles having a size of 0.01 ㎛ or more in the rear end of the particular gas supply parts such as valves, flow regulators installed on the gas supply line through which the reaction gas passes Particle counter that can count the number, Water concentration analyzer that can detect the concentration of moisture below 2000 ppb, Oxygen concentration analyzer that can detect the concentration of oxygen below 10 ppb, Impurities below 1 ppb Optionally install analytical equipment such as a mobile atmospheric ionization mass spectrometer that can be analyzed.
이어서, 질소가스, 아르곤가스 등의 운반가스를 밸브, 유량조절기 등의 가부품이 설치된 가스공급라인에 공급한다. 이에 따라 가스공급용 부품에 흡착된 불순물은 운반가스와 혼합되어 전술한 바와 같이 가스공급라인 상에 선택적으로 설치된 입자계수기, 수분농도분석기, 산소농도분석기, 이동식 대기압이온화질량분석기 등의 분석설비로 공급되어 불순물에 포함된 파티클의 갯수, 수분의 농도, 산소의 농도 등이 측정된다.Subsequently, a carrier gas such as nitrogen gas or argon gas is supplied to a gas supply line provided with provisional parts such as a valve and a flow regulator. Accordingly, the impurities adsorbed on the gas supply parts are mixed with the carrier gas and supplied to an analysis facility such as a particle counter, a water concentration analyzer, an oxygen concentration analyzer, and a mobile atmospheric ionization mass spectrometer, which are selectively installed on the gas supply line as described above. Then, the number of particles contained in the impurities, the concentration of water, the concentration of oxygen, and the like are measured.
그러므로, 작업자가 현장에서 직접 가스공급용 부품의 이상유무를 판단한다.Therefore, the operator directly determines whether there is an abnormality in the gas supply parts at the site.
또한, 상기 가스공급라인 상에 반도체소자 제조공정에 사용되는 질소, 산소, 수소, 아르곤, 헬륨 등의 반응가스를 직접 공급하면, 반응가스의 청정도도 평가할 수 있다.In addition, when the reaction gas, such as nitrogen, oxygen, hydrogen, argon, helium, which is used in the semiconductor device manufacturing process, is directly supplied to the gas supply line, the cleanliness of the reaction gas may be evaluated.
그리고, 공정챔버에 0.01 ㎛ 이상의 크기를 가지는 파티클의 갯수를 카운트할 수 있는 입자계수기, 2000 ppb 이하의 수분의 농도를 검출할 수 있는 수분농도분석기, 10 ppb 이하의 산소의 농도를 검출할 수 있는 산소농도분석기, 1 ppb 이하의 불순물을 분석할 수 있는 이동식 대기압이온화질량분석기 등의 분석설비를 선택적으로 설치한 후, 공정챔버에 질소가스 또는 아르곤가스 등의 운반용 가스를 공급한다.In addition, a particle counter capable of counting the number of particles having a size of 0.01 μm or more in the process chamber, a moisture concentration analyzer capable of detecting a concentration of water of 2000 ppb or less, and a concentration of oxygen of 10 ppb or less After analytical equipment such as an oxygen concentration analyzer and a mobile atmospheric ionization mass spectrometer capable of analyzing impurities of 1 ppb or less is selectively installed, a carrier gas such as nitrogen gas or argon gas is supplied to the process chamber.
이에 따라서, 운반용 가스와 혼합된 공정챔버에 잔류하는 반응가스, 공정챔버로 공급된 반응가스의 반응에 의해서 생성된 반응생성물 등의 불순물은 선택적으로 공정챔버에 설치된 입자계수기, 수분농도분석기, 산소농도분석기, 이동식 대기압이온화질량분석기로 공급되어 분석된다.Accordingly, impurities such as the reaction gas remaining in the process chamber mixed with the transport gas and the reaction product generated by the reaction of the reaction gas supplied to the process chamber may optionally be provided with a particle counter, a moisture concentration analyzer, and an oxygen concentration installed in the process chamber. Analyzer, mobile atmospheric ionization mass spectrometer.
이때, 대기압이온화질량분석기를 통해서 가스공급라인 및 공정챔버의 미세누설도 확인할 수 있다.At this time, the micro leakage of the gas supply line and the process chamber can also be confirmed through the atmospheric pressure ionization mass spectrometer.
따라서, 본 발명에 의하면 밸브 등의 가스공급용 부품에 대한 분석공정을 다양한 분석설비를 이용하여 공정설비 상에서 직접 진행할 수 있으므로 공정설비의 운전정지시간을 단축시킬 수 있고, 분석공정의 분석결과에 신뢰성을 가질 수 있는 효과가 있다.Therefore, according to the present invention, the analysis process for gas supply parts such as valves can be directly performed on the process equipment by using various analysis equipments, thereby reducing the operation downtime of the process equipment, and reliable in the analysis results of the analysis process. There is an effect that can have.
또한, 반도체소자 제조공정이 진행되는 공정챔버는 입계수기, 수분농도분석기, 산소농도분석기, ppm 단위 이하에 대해서도 분석할 수 있는 이동식 대기압이온화질량분석기를 이용하여 광범위하게 분석공정이 진행됨으로 인해서 역시 분석공정의 분석결과에 신뢰성을 가질 수 있고, 대기압이온화질량분석기를 통해서 공정설비의 미세누설도 확인할 수 있는 효과가 있다.In addition, the process chamber in which the semiconductor device manufacturing process is performed is also analyzed due to the extensive analysis process using a mobile atmospheric pressure ionization mass spectrometer that can analyze even a particle counter, a water concentration analyzer, an oxygen concentration analyzer, and a ppm unit or less. It can be reliable in the analysis results of the process, there is an effect that can check the micro leakage of the process equipment through the atmospheric pressure ionization mass spectrometer.
이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.
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| KR1019960070896A KR19980051969A (en) | 1996-12-24 | 1996-12-24 | Impurity Analysis Method of Semiconductor Manufacturing Process Equipment |
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| KR1019960070896A KR19980051969A (en) | 1996-12-24 | 1996-12-24 | Impurity Analysis Method of Semiconductor Manufacturing Process Equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100793367B1 (en) * | 2006-07-31 | 2008-01-11 | 삼성에스디아이 주식회사 | Heating furnace, heating apparatus including the same and fabricating method of organic light emitting display device using the same |
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1996
- 1996-12-24 KR KR1019960070896A patent/KR19980051969A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100793367B1 (en) * | 2006-07-31 | 2008-01-11 | 삼성에스디아이 주식회사 | Heating furnace, heating apparatus including the same and fabricating method of organic light emitting display device using the same |
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