KR19980051070A - Manufacturing Method of Silicon Angular Velocity Sensor - Google Patents
Manufacturing Method of Silicon Angular Velocity Sensor Download PDFInfo
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- KR19980051070A KR19980051070A KR1019960069934A KR19960069934A KR19980051070A KR 19980051070 A KR19980051070 A KR 19980051070A KR 1019960069934 A KR1019960069934 A KR 1019960069934A KR 19960069934 A KR19960069934 A KR 19960069934A KR 19980051070 A KR19980051070 A KR 19980051070A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P3/00—Measuring linear or angular speed; Measuring differences of linear or angular speeds
- G01P3/42—Devices characterised by the use of electric or magnetic means
- G01P3/44—Devices characterised by the use of electric or magnetic means for measuring angular speed
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/02—Rotary gyroscopes
- G01C19/04—Details
- G01C19/06—Rotors
- G01C19/065—Means for measuring or controlling of rotors' angular velocity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
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Abstract
본 발명은 실리콘 각속도센서의 제조방법으로서, 실리콘기판(1),(1')을 직접접합방법으로 매몰산화층(2)을 이용 접합하고 산화막(3),(3')을 실리콘기판(1),(1')에 각각 성장시키는 공정과, 사진식각 공정으로 압저항(4)을 형성할 부분의 산화막(3)과 진동체(6)를 형성할 영역의 산화막(3')을 남겨 제거하고 실리콘이 노출된 앞면에 붕소이온을 주입 압저항(4)을 형성하여 열처리로 압저항(4) 영역을 활성화하는 공정, 사진식각 공정을 이용하여 금속도선(7)과 압저항(4)을 전기적으로 연결할 금속배선(5)을 형성하고 식각정지층으로 매몰산화층(2)을 이용한 건식식각법으로 실리콘기판(1)을 식각하여 실리콘보(8)를 제조하는 공정 및, 실리콘 기판(1)을 보호하고 실리콘기판(1')을 TMAH 수용액으로 식각하여 진동체(6)를 형성하는 공정으로 이루어져 실리콘 각속도센서의 성능 및 수율을 향상시킬수 있는 효과가 있는 것이다.The present invention provides a method for manufacturing a silicon angular velocity sensor, wherein silicon substrates 1 and 1 'are bonded using a buried oxide layer 2 by a direct bonding method and oxide films 3 and 3' are bonded to a silicon substrate 1. And (1 ') and the oxide film 3' in the region where the piezoelectric resistor 4 is to be formed and the oxide film 3 'in the region where the vibrating body 6 is to be formed are removed by a photolithography process. Injecting boron ions into the silicon-exposed front surface to form a piezoresistor (4) to activate the piezoresistor (4) region by heat treatment, and to electrically connect the metal conductor (7) and the piezoresistor (4) using a photolithography process. Forming a metal wire (5) to be connected by etching and etching the silicon substrate (1) by dry etching using the buried oxide layer (2) as an etch stop layer to produce a silicon beam (8), and the silicon substrate (1) Protection and etching the silicon substrate (1 ') with TMAH aqueous solution to form the vibrating body (6). It will be effective that can improve the performance and yield.
Description
본 발명은 실리콘 각속도센서의 제조방법에 관한 것으로서, 특히 실리콘기판 직접 접합법(SDB : Silicon Direct Bonding)에 의한 매물 산화층을 식각 정지층으로 사용하여 진동체의 제조시 균일성 및 수율을 향상시키는 실리콘 미세가공기술을 이용한 실리콘 각속도센서의 제조방법에 관한 것이다.The present invention relates to a method for manufacturing a silicon angular velocity sensor, and in particular, by using an oxide layer for sale by silicon direct bonding (SDB: Silicon Direct Bonding) as an etch stop layer, silicon fineness to improve uniformity and yield in the manufacture of a vibrating body. It relates to a method for manufacturing a silicon angular velocity sensor using a processing technology.
각속도센서는 각속도에 의한 진동체의 비틀림을 실리콘 보에 형성된 압저항의 변화를 이용하여 측정함으로써 각속도를 측정하는 것이다.The angular velocity sensor measures the angular velocity by measuring the torsion of the vibrating body due to the angular velocity using a change in piezoresistor formed in the silicon beam.
최근 자동차의 차량항법장치(Car Navigation System)의 보조수단으로 혹은 차체제어 또는 비디오 카메라의 손떨림 방지장치 등의 여러 응용분야에서 사용할 수 있는 실리콘 각속도센서의 개발이 요구되고 있으며, 이에 따라 실리콘 미세가공 기술을 이용한 실리콘 각속도센서의 제조방법이 연구되고 있다. 상기 응용분야에 적용하기 위한 각속도센서는 기존의 기계식 또는 광학적 방식의 각속도센서에 비하여 요구감도는 낮지만 소형, 신뢰성 및 저가격 등의 요구조건을 만족하여야 한다.Recently, the development of silicon angular velocity sensor that can be used as an auxiliary means of a car navigation system of a car or in various applications such as body control or a camera shake prevention device is required. Method of manufacturing silicon angular velocity sensor using The angular velocity sensor to be applied to the application field has a lower sensitivity than the conventional mechanical or optical angular velocity sensor but must satisfy the requirements of small size, reliability and low cost.
종래의 실리콘 미세가공법을 이용한 각속도센서의 제조방법은 양면이 경면처리된 N형 실리콘기판을 이용하여 앞면에 압저항을 형성하고 뒷면을 KOH수용액 등으로 식각하여 진동체를 제조하는 방법을 사용하고 있다. 그러나 이러한 종래 실리콘 각속도센서의 제조방법은 진동체의 질량 및 실리콘 보의 두께를 KOH 수용액의 식각 시간만으로 조절하기 때문에 실리콘기판 전면에 균일한 보의 두께 및 진동체의 질량을 확보하기가 어렵게 되는 문제점이 있다.The conventional method of manufacturing an angular velocity sensor using a silicon micromachining method uses a method of manufacturing a vibrating body by forming a piezoresistor on the front surface using an N-type silicon substrate on which both surfaces are mirrored and etching the back surface with an aqueous KOH solution. . However, the conventional method of manufacturing the silicon angular velocity sensor makes it difficult to secure the uniform thickness of the beam and the mass of the vibrating body in front of the silicon substrate because the thickness of the vibrating body and the thickness of the silicon beam are controlled only by the etching time of the KOH aqueous solution. There is this.
본 발명은 상기한 실정을 감안하여 종래 실리콘 각속도센서의 제조방법에서 야기되는 문제점을 해결하고자 발명한 것으로서, 기판 직접 접합법으로 접합한 두 장의 실리콘 기판을 사용하고 매몰 산화층을 식각 정지층으로 사용하여 KOH 수용액 등으로 진동체를 제조시 진동체 및 보의 균일성을 확보하여 제조되는 각속도센서의 수율 및 정확성을 높일 수 있는 실리콘 각속도센서의 제조방법을 제공합에 그 목적이 있다.The present invention has been invented to solve the problems caused by the conventional method of manufacturing a silicon angular velocity sensor in view of the above situation, using two silicon substrates bonded by a direct substrate bonding method and using a buried oxide layer as an etch stop layer. It is an object of the present invention to provide a method for manufacturing a silicon angular velocity sensor that can increase the yield and accuracy of the angular velocity sensor produced by securing uniformity of the vibrating body and the beam when manufacturing the vibrating body with an aqueous solution.
도 1은 본 발명 실리콘 각속도센서의 제조공정을 나타낸 단면도,1 is a cross-sectional view showing a manufacturing process of the present invention silicon angular velocity sensor;
도 2는 본 발명의 제조방법으로 제조된 실리콘 각속도센서의 평면도이다.2 is a plan view of a silicon angular velocity sensor manufactured by the manufacturing method of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1,1' : 실리콘기판 2 : 매몰산화층1,1 ': silicon substrate 2: buried oxide layer
3,3' : 산화막 4 : 압저항3,3 ': oxide film 4: piezoresistor
5 : 금속배선 6 : 진동체5: metal wiring 6: vibrating body
7 : 금속도선 8 : 실리콘보7: metal wire 8: silicon beam
상기한 목적을 달성하기 위한 본 발명 실리콘 각속도센서의 제조방법은 실리콘기판(1),(1')을 직접접합방법으로 매물산화층(2)을 이용 접합하고 산화막(3),(3')을 실리콘기판(1),(1')에 각각 성장시키는 공정과, 사진식각 공정으로 압저항(4)을 형성할 부분의 산화막(3)과 진동체(6)를 형성할 영역의 산화막(3')을 남겨 제거하고 실리콘이 노출된 앞면에 붕소이온을 주입 압저항(4)을 형성하여 열처리로 압저항(4) 영역을 활성화하는 공정, 사진식각 공정을 이용하여 금속도선(7)과 압저항(4)을 전기적으로 연결할 금속배선(5)을 형성하고 식각정지층으로 매몰산화층(3)을 이용한 건식식각법으로 실리콘기판(1)을 식각하여 실리콘보(8)를 제조하는 공정 및, 실리콘 기판(1)을 보호하고 실리콘기판(1')을 TMAH 수용액으로 식각하여 진동체(6)를 형성하는 공정을 포함하여 이루어진 것을 특징으로한다.The method of manufacturing the silicon angular velocity sensor of the present invention for achieving the above object is to bond the silicon substrates (1) and (1 ') using the buried oxide layer (2) by a direct bonding method and the oxide films (3) and (3') to be bonded. An oxide film 3 'in a region where the silicon film 1 and 1' are respectively grown and an oxide film 3 and a vibrating body 6 in which a piezoresistor 4 is to be formed by a photolithography process. ) And remove the boron ions into the silicon-exposed front surface to form a piezoresistor (4) to activate the piezoresistor (4) region by heat treatment, and the metal wire (7) and piezoresistors using a photolithography process. Forming a silicon wire (5) electrically connected to (4) and etching the silicon substrate (1) by dry etching using the buried oxide layer (3) as an etch stop layer to produce a silicon beam (8), and Protecting the substrate 1 and etching the silicon substrate 1 'with a TMAH aqueous solution to form the vibrating body 6; It is characterized by.
본 발명은 실리콘 미세가공법을 이용한 각속도센서의 제조방법에 관한 것으로서, 실리콘 기판 직접접합법을 이용하여 두 장의 실리콘 기판을 접합한 후 상부 실리콘기판에 압저항 및 회로부를 형성하고 기판 접합시 형성된 매몰 산화층을 진동체 제조시 식각 정지층 및 보제조시 식각정지층으로 사용하는 것을 특징으로 하는 실리콘 각속도센서의 제조방법이다.The present invention relates to a method of manufacturing an angular velocity sensor using a silicon micromachining method, wherein two silicon substrates are bonded by using a silicon substrate direct bonding method, and then a buried oxide layer formed on the upper silicon substrate is formed, and a buried oxide layer is formed. Silicon angular velocity sensor manufacturing method characterized in that used as an etch stop layer in the manufacture of the vibrating body and an etch stop layer in the auxiliary manufacturing.
이하 첨부도면을 참조하여 본 발명 실리콘 각속도센서의 제조방법을 상세하게 설명한다.Hereinafter, a method of manufacturing the silicon angular velocity sensor of the present invention will be described in detail with reference to the accompanying drawings.
도 1은 본 발명 실리콘 각속도센서의 제조공정을 나타낸 단면도로서, 먼저 실리콘 각속도센서 제조시 진동제의 수율 및 균일성 확보를 위하여 도 1(가)에 나타낸 바와 같이 두 장의 실리콘 기판(1),(1')을 실리콘 기판 직접접합 방법을 이용하여 접합한다. 이때 진동체를 식각하여 제조할 하부 실리콘기판(1')은 N형 또는 P형(100) 실리콘기판으로 하며, 상부실리콘 기판(1)은 N형(100) 또는 P형(110) 실리콘 기판으로 하고, 매몰 산화층(2)의 두께는 식각 정지층으로 사용하기에 층분한 두께로 하며 1㎛로 한다. 실리콘 접합 후 회로부를 형성할 상부실리콘 기판(1)을 보(8)의 두께에 따라 일정한 두께 만큼 연마, 경면처리하고, 상부 실리콘기판(1)의 두께는 보(8)의 두께이며 20㎛로 한다. 이후 식각 방지막 또는 회로의 절연막으로서 사용할 산화막(3),(3')을 도 1(나)와 같이 성장시킨다.1 is a cross-sectional view showing a manufacturing process of the silicon angular velocity sensor of the present invention. First, as shown in FIG. 1 (a), two silicon substrates 1, ( 1 ') is bonded using the silicon substrate direct bonding method. At this time, the lower silicon substrate 1 'to be manufactured by etching the vibrating body is an N type or P type 100 silicon substrate, and the upper silicon substrate 1 is an N type 100 or P type 110 silicon substrate. In addition, the thickness of the buried oxide layer 2 is set to a thickness sufficient to be used as an etch stop layer, and 1 탆. After silicon bonding, the upper silicon substrate 1 to form the circuit part is polished and mirror-processed by a certain thickness according to the thickness of the beam 8, and the thickness of the upper silicon substrate 1 is the thickness of the beam 8 and is 20 mu m. do. After that, the oxide films 3 and 3 'to be used as the etch stop film or the circuit insulating film are grown as shown in FIG.
이어 도 1 (다)에 도시한 바와 같이 일반적인 사진식각공정을 이용하여 앞면의 압저항(4)을 형성할 부분과 뒷면의 진동체(6)를 형성할 영역의의 산화막을 제거한다. 실리콘이 노출된 앞면에 붕소이온을 주입하여 압저항(4)을 형성하고 열처리함으로서 압저항(4) 영역을 활성화한다. 계속해서 도 1(라)에 나타낸 바와같이 사진식각공정을 이용하여 압저항(4) 영역에 접촉창을 형성하고, 도 1 (마)에 도시한 바와 같이 진동체(6)를 여기할 금속도선(7) 및 압저항(4)을 전기적으로 연결할 금속배선(5)을 사진식각공정을 이용하여 형성한다. 이 후 건석식각방법으로 상부 실리콘기판(1)을 식각하여 실리콘 보(8)를 제조하며 이때 식각정지층으로서 매물산화층(2)을 사용한다. 다음으로 도 1 (바)에 도시한 바와 같이 상부 실리콘기판(1)을 보호하고 하부실리콘기판(1')을 TMAH 수용액 등으로서 식각함으로서 진동체(6)를 제조하면 도 2에 평면도로서 나타낸 바와 같은 실리콘 각속도센서가 제조된다.Next, as illustrated in FIG. 1 (c), the oxide film in the portion where the piezoelectric resistor 4 is formed on the front surface and the region where the vibrator 6 is formed on the back surface is removed using a general photolithography process. The boron ions are implanted into the silicon-exposed front surface to form a piezoresistor 4 and heat treated to activate the piezoresistor 4 region. Subsequently, as shown in FIG. 1 (d), a contact window is formed in the piezoresistive region 4 using a photolithography process, and as shown in FIG. 1 (e), a metal lead to excite the vibrating body 6. (7) and the metal wire 5 to electrically connect the piezoresistor 4 are formed by a photolithography process. Thereafter, the upper silicon substrate 1 is etched by the dry etching method to manufacture the silicon beam 8, in which case the oxidation oxide layer 2 is used as the etch stop layer. Next, as shown in FIG. 1B, the vibrating body 6 is manufactured by protecting the upper silicon substrate 1 and etching the lower silicon substrate 1 'with TMAH aqueous solution or the like, as shown in FIG. The same silicon angular velocity sensor is manufactured.
도 2 윗면에 자기장을 인가할 자석을 접착한 후, 길이 L인 도선(7)에 교류전류(I)가 흐르면 도면에 수직으로 인가된 자기장(B)에 대하여 도선(7)은 로렌쯔힘을 받게되며 로렌쯔힘(FL)의 크기는 FLB로 된다. 전류의 방향이 반대이므로 두 개의 진동체(6)는 서로 반대방향으로 진동하는 음차 구조를 가지게 되며 이때 전류(I)의 주파수는 진동체(6)의 공진 주파수와 일치하게 된다. 도 2의 실리콘 각속도센서에 회전각속도(Ω)가 가해지면 진동체(6)는 회전각속도의 반대방향으로 코리올리의 힘을 받게 되며, 코리올리의 힘(Fc)은 2MVΩ(M : 진동체의 질량, V : 진동체의 진동속도)로 된다. 그러므로 회전각속도(Ω)가 인가되었을때 코이올리의 힘에 의한 보(8)의 비틀림을 보(8)에 형성된 압저항(4)을 이용하여 측정함으로서 회전각속도(Ω)를 측정할 수 있게 된다.After attaching a magnet to apply a magnetic field to the upper surface of FIG. 2, when an alternating current I flows through the conductive wire 7 having a length L, the conductive wire 7 is subjected to Lorentz force with respect to the magnetic field B applied perpendicular to the drawing. The size of Lorentz force F L is F L B. Since the directions of the currents are opposite, the two vibrators 6 have a tuning fork structure that vibrates in opposite directions, and the frequency of the current I coincides with the resonance frequency of the vibrator 6. When the rotational angular velocity (Ω) is applied to the silicon angular velocity sensor of FIG. 2, the vibrating body 6 receives the force of Coriolis in the opposite direction of the rotational angular velocity, and the Coriolis force Fc is 2 MVΩ (M: mass of the vibrating body, V: vibration speed of the vibrating body). Therefore, when the rotational angular velocity (Ω) is applied, the rotational angular velocity (Ω) can be measured by measuring the torsion of the beam 8 by the force of the Coriolis using the piezoresistive 4 formed on the beam 8. .
상기한 바와 같이 본 발명은 두 장의 실리콘 기판을 실리콘기판 직접접합 방법을 이용하여 접합하고 실리콘 기판 접합시 형성된 매몰 산화층을 진동체의 제조 및 보의 제조시 식각 정지층으로 사용하여 균일한 진동제 및 보를 얻게 되므로 실리콘 각속도센서의 성능 및 수율을 향상시킬 수 있는 효과가 있다.As described above, the present invention provides a uniform vibration agent by bonding two silicon substrates using a silicon substrate direct bonding method and using the buried oxide layer formed during silicon substrate bonding as an etch stop layer during the manufacture of the vibrating body and the beam. Since the beam is obtained, the performance and yield of the silicon angular velocity sensor can be improved.
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| KR1019960069934A KR100237165B1 (en) | 1996-12-23 | 1996-12-23 | Manufacturing process of silicon angular sensor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010064043A (en) * | 1999-12-24 | 2001-07-09 | 구본준, 론 위라하디락사 | method for fabricating thin film transistor and array substrate for liquid crystal display device |
| KR100372780B1 (en) * | 1998-07-09 | 2003-08-30 | 주식회사 만도 | Manufacturing Method of Angular Speed Sensor |
| KR100619478B1 (en) * | 2005-03-18 | 2006-09-06 | 한국과학기술원 | Micro sound element having circular diaphragm and method for manufacturing the micro sound element |
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1996
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100372780B1 (en) * | 1998-07-09 | 2003-08-30 | 주식회사 만도 | Manufacturing Method of Angular Speed Sensor |
| KR20010064043A (en) * | 1999-12-24 | 2001-07-09 | 구본준, 론 위라하디락사 | method for fabricating thin film transistor and array substrate for liquid crystal display device |
| KR100619478B1 (en) * | 2005-03-18 | 2006-09-06 | 한국과학기술원 | Micro sound element having circular diaphragm and method for manufacturing the micro sound element |
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