KR19980050055U - Wafer Cleaning Liquid Supply Device - Google Patents
Wafer Cleaning Liquid Supply Device Download PDFInfo
- Publication number
- KR19980050055U KR19980050055U KR2019960063226U KR19960063226U KR19980050055U KR 19980050055 U KR19980050055 U KR 19980050055U KR 2019960063226 U KR2019960063226 U KR 2019960063226U KR 19960063226 U KR19960063226 U KR 19960063226U KR 19980050055 U KR19980050055 U KR 19980050055U
- Authority
- KR
- South Korea
- Prior art keywords
- deionized water
- water level
- solenoid valve
- level sensor
- wafer
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 34
- 239000007788 liquid Substances 0.000 title abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 63
- 239000008367 deionised water Substances 0.000 claims abstract description 35
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 35
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 25
- 238000005406 washing Methods 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 고안은 웨이퍼 세정액 공급장치를 개시한다. 개시된 본 고안은, 웨이퍼의 산화막을 식각하는 세정조에 연결되어 플르오르화 수소가 공급되는 통로로서, 개폐 밸브가 설치된 플르오르화 수소 라인; 상기 세정조에 연결되어 플르오르화 수소와 일정 비율로 혼합되는 탈이온수가 공급되는 통로로서, 솔레노이드 밸브가 설치된 탈이온수 라인; 및 상기 세정조에 상하 소정간격을 두고 부착되어, 상기 탈이온수 라인의 솔레노이드 밸브 개폐를 제어하는 저수위 및 고수위 센서를 포함하고, 상기 솔레노이드 밸브는 세정액에 침지되면 동작되는 고수위 센서에 의해 폐쇄되도록 구성된 것을 특징으로 한다.The present invention discloses a wafer cleaning liquid supply apparatus. Disclosed is a passage in which hydrogen fluoride is supplied connected to a cleaning tank for etching an oxide film of a wafer, the hydrogen fluoride line having an opening / closing valve; A deionized water line connected to the washing tank and supplied with deionized water mixed with hydrogen fluoride at a predetermined ratio, the deionized water line having a solenoid valve installed therein; And a low water level and a high water level sensor attached to the cleaning tank at a predetermined interval up and down, and controlling the opening and closing of the solenoid valve of the deionized water line, wherein the solenoid valve is configured to be closed by a high water level sensor operated when immersed in the cleaning liquid. It is done.
Description
본 고안은 웨이퍼 세정액 공급장치에 관한 것으로서, 보다 구체적으로는 웨이퍼의 산화막 에칭을 위해 사용되는 탈이온수(DI water)와 플르오르화 수소(HF)가 일정비율로 혼합된 세정액을 공급하는 장치에 관한 것이다.The present invention relates to a wafer cleaning liquid supplying device, and more particularly, to an apparatus for supplying a cleaning liquid in which deionized water (DI water) and hydrogen fluoride (HF) are mixed at a constant ratio used for etching an oxide film of a wafer. .
일반적으로, 웨이퍼상에 형성된 산화막을 제거하기 위해서, 세정액이 담긴 세정조에 웨이퍼를 일정 시간 침지시킨다. 세정액은 통상적으로, 플르오르화 수소(이하 HF라 영문표기함)와 탈이온수가 1:50의 비율로 혼합된 액체로서, 세정작업에 따라 탈이온수가 증발되어 그 비율이 점진적으로 줄어들게 되므로, 일정 시간마다 탈이온수를 보충해주어야 된다.In general, in order to remove the oxide film formed on the wafer, the wafer is immersed in the cleaning bath containing the cleaning liquid for a predetermined time. The cleaning liquid is typically a liquid in which hydrogen fluoride (hereinafter referred to as HF) and deionized water are mixed at a ratio of 1:50. As the deionized water is evaporated according to the cleaning operation, the ratio is gradually reduced, Deionized water must be replenished every time.
그러나, 종래에는 초기에 HF와 탈이온수를 1:50으로 혼합시킨 후, 8시간 정도 세정작업을 하게 되면, 탈이온수가 증발되어 HF의 비율이 증가되었다. 따라서, 세정조를 계속 사용하지 못하고, 세정장비를 정지시킨 후 탈이온수를 세정조에 보충시켜서 초기 상태인 1:50의 비율이 되도록 한 다음에야 세정작업을 계속 실시할 수가 있었다. 즉, 세정작업 주기가 8시간으로 제한되었다.However, in the prior art, when HF and deionized water were initially mixed at 1:50 and then washed for about 8 hours, deionized water was evaporated to increase the ratio of HF. Therefore, it was not possible to continue using the washing tank, and after the washing equipment was stopped, deionized water was replenished in the washing tank so that the ratio was 1:50, which was the initial state. That is, the cleaning cycle was limited to eight hours.
이로 인하여, 세정작업 시간이 길어지고, 결과적으로 웨이퍼 생산성이 저하되는 문제점이 있었다.For this reason, the cleaning time is long, and as a result, there is a problem that the wafer productivity is lowered.
따라서, 본 발명은 종래의 세정액 공급방식으로 인해 야기되는 문제점을 해소하기 위해 안출된 것으로서, 탈이온수가 부족하면 초기 비율로 복귀되도록 자동적으로 탈이온수가 보충되도록 하여, 세정조를 계속 사용할 수 있도록 하므로써, 웨이퍼 생산성을 향상시킬 수 있는 웨이퍼 세정액 공급장치를 제공하는데 목적이 있다.Accordingly, the present invention has been made to solve the problems caused by the conventional cleaning solution supply method, by automatically replenishing the deionized water to return to the initial ratio when the deionized water is insufficient, so that the cleaning tank can be used continuously It is an object of the present invention to provide a wafer cleaning liquid supply apparatus capable of improving wafer productivity.
도 1은 본 고안에 따른 웨이퍼 세정액 공급장치를 나타낸 도면1 is a view showing a wafer cleaning solution supply apparatus according to the present invention
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
1 : 세정조2 : HF 라인1: cleaning tank 2: HF line
3 : 탈이온수 라인21 : 개폐밸브3: deionized water line 21: on-off valve
31 : 솔레노이드 밸브33 ; 고수위 센서31: solenoid valve 33; High water level sensor
34 : 저수위 센서34: low water level sensor
상기와 같은 목적을 달성하기 위해 본 고안은, 웨이퍼의 산화막을 식각하는 세정조에 연결되어 플르오르화 수소가 공급되는 통로로서, 개폐 밸브가 설치된 플르오르화 수소 라인; 상기 세정조에 연결되어 플르오르화 수소와 일정 비율로 혼합되는 탈이온수가 공급되는 통로로서, 솔레노이드 밸브가 설치된 탈이온수 라인; 및 상기 세정조에 상하 소정간격을 두고 부착되어, 상기 탈이온수 라인의 솔레노이드 밸브 개폐를 제어하는 저수위 및 고수위 센서를 포함하고, 상기 솔레노이드 밸브는 세정액에 침지되면 동작되는 고수위 센서에 의해 폐쇄되도록 구성된 것을 특징으로 한다.In order to achieve the above object, the present invention is connected to a cleaning tank for etching the oxide film of the wafer is a passage for supplying hydrogen fluoride, hydrogen fluoride line is provided with an on-off valve; A deionized water line connected to the washing tank and supplied with deionized water mixed with hydrogen fluoride at a predetermined ratio, the deionized water line having a solenoid valve installed therein; And a low water level and a high water level sensor attached to the cleaning tank at a predetermined interval up and down, and controlling the opening and closing of the solenoid valve of the deionized water line, wherein the solenoid valve is configured to be closed by a high water level sensor operated when immersed in the cleaning liquid. It is done.
상기된 본 고안의 구성에 의하면, 탈이온수가 증발되어 부족하게 되어 고수위 센서 밑으로 수위가 하강하게 되면, 자동적으로 솔레노이드 밸브가 개방되어 탈이온수가 세정조로 공급되므로써, 세정조를 정지시키지 않고 계속적으로 사용할 수 있게 된다.According to the above-described constitution of the present invention, when deionized water is evaporated and insufficient, and the water level drops below the high water level sensor, the solenoid valve is automatically opened and deionized water is supplied to the washing tank, thereby continuing without stopping the washing tank. It becomes usable.
[실시예]EXAMPLE
이하, 본 고안의 바람직한 실시예를 첨부도면에 의거하여 상세히 설명한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
첨부한 도면 도 1은 본 고안에 따른 웨이퍼 세정액 공급장치를 나타낸 도면이다.1 is a view showing a wafer cleaning solution supply apparatus according to the present invention.
참고로, 본 실시예의 구성을 설명함에 있어, 명세서의 서두에서 설명된 종래의 기술과 동일한 부분에 대해서는 설명의 중복을 피하기 위하여 반복설명은 생략하고 개선된 부분만을 주로하여 설명한다.For reference, in describing the configuration of the present embodiment, the same parts as in the prior art described at the beginning of the specification will be described mainly by omitting the repeated descriptions in order to avoid duplication of description.
도시된 바와 같이, 세정조(1)에서 HF와 탈이온수가 1:50의 비율로 혼합된 세정액으로 웨이퍼의 산화막을 습식식각하여 제거하게 된다. 따라서, 세정조(1)에 HF 라인(2)과 탈이온수 라인(3)이 연결된다.As shown in the drawing, in the cleaning tank 1, the oxide film of the wafer is wet-etched and removed with a cleaning solution mixed with HF and deionized water in a ratio of 1:50. Therefore, the HF line 2 and the deionized water line 3 are connected to the washing tank 1.
HF 라인(2)에는 HF의 공급량을 제어하는 개폐 밸브(21)가 설치되고, 또한 HF의 강제압송을 위한 구동원인 펌프(26)가 설치된다. 펌프(26)와 개폐 밸브(21) 사이의 HF 라인(2)에는 HF의 공급량을 제어하기 위한 쳄버(22)가 설치되고, 이 쳄버(22)에 3개의 센서, 즉 고수위 센서(23)와 중수위 센서(24) 및 저수위 센서(25)가 부착된다. 각 센서(23, 24, 25)의 온/오프에 따라 개폐 밸브의 동작이 제어된다.The HF line 2 is provided with an opening / closing valve 21 for controlling the supply amount of HF, and a pump 26 serving as a driving source for forcing the HF. A chamber 22 for controlling the supply amount of HF is installed in the HF line 2 between the pump 26 and the on-off valve 21, and three sensors, that is, the high water level sensor 23, are provided in the chamber 22. The medium water level sensor 24 and the low water level sensor 25 are attached. The operation of the on-off valve is controlled in accordance with the on / off of each sensor 23, 24, 25.
한편, 탈이온수 라인(3)에는 개폐동작이 전자적으로 제어되는 솔레노이드 밸브(31)가 설치된다. 솔레노이드 밸브(31)의 개폐동작을 제어하는 4개의 센서, 즉 최고수위 센서(32)와 고수위 센서(33), 저수위 센서(34), 및 최저수위 센서(35)가 세정조(1)에 부착된다. 특히, 고수위 센서(33)가 '온' 상태일 때는, 솔레노이드 밸브(31)가 폐쇄되도록 제어된다.On the other hand, the deionized water line 3 is provided with a solenoid valve 31 in which the opening and closing operation is controlled electronically. Four sensors for controlling the opening and closing operation of the solenoid valve 31, that is, the high water level sensor 32 and the high water level sensor 33, the low water level sensor 34, and the low water level sensor 35 are attached to the cleaning tank 1. do. In particular, when the high water level sensor 33 is in the 'on' state, the solenoid valve 31 is controlled to be closed.
이하, 상기와 같이 구성된 본 실시예의 동작을 상세히 설명한다.Hereinafter, the operation of this embodiment configured as described above will be described in detail.
먼저, HF 라인(2)의 개폐 밸브(21)가 개방되어 일정량의 HF가 세정조(1)로 공급된다. 그런 다음, 솔레노이드 밸브(31)가 개방되어 탈이온수가 세정조(1)로 공급되는데, HF와 탈이온수의 비율이 1:50에 될 때까지 공급된다. 이러한 상태에서, 웨이퍼를 세정조(1)에 일정시간 침지시켜 산화막을 제거한다.First, the opening / closing valve 21 of the HF line 2 is opened to supply a predetermined amount of HF to the cleaning tank 1. Then, the solenoid valve 31 is opened to supply deionized water to the washing tank 1, which is supplied until the ratio of HF and deionized water becomes 1:50. In this state, the wafer is immersed in the cleaning tank 1 for a predetermined time to remove the oxide film.
이러한 세정작업이 계속 진행되면 탈이온수가 증발되어 부족하게 된다. 세정조(1)의 수위가 고수위 센서(33)의 밑으로 내려가서 고수위 센서(33)가 '오프'되면, 폐쇄되어 있던 솔레노이드 밸브(31)가 개방되어 탈이온수가 세정조(1)로 공급되어 부족한 양이 보충된다.If this cleaning operation continues, deionized water is evaporated and insufficient. When the water level of the washing tank 1 goes below the high water level sensor 33 and the high water level sensor 33 is 'off', the closed solenoid valve 31 is opened to supply deionized water to the washing tank 1. It is replenished with insufficient quantity.
이와 같이 탈이온수가 보충되어 수위가 올라가다가 고수위 센서(32) 위치에 도달하면, 고수위 센서(33)가 '온'되어서 솔레노이드 밸브(31)가 폐쇄되므로써, 탈이온수의 공급이 중단된다.When deionized water is replenished in this way and the water level rises to reach the high water level sensor 32 position, the high water level sensor 33 is 'on' and the solenoid valve 31 is closed, so that the supply of deionized water is stopped.
이러한 동작에 의해, 세정액의 HF와 탈이온수의 비율이 1:50으로 자동적으로 조정된다. 따라서, 세정작업을 중단시킬 필요없이 계속적인 세정작업이 가능하게 된다.By this operation, the ratio of HF and deionized water of the cleaning liquid is automatically adjusted to 1:50. Therefore, it is possible to continue the cleaning operation without having to interrupt the cleaning operation.
상기된 바와 같이 본 고안에 의하면, 부족한 탈이온수가 세정조로 자동적으로 공급되어 보충되므로써, 세정작업을 중단없이 계속 진행할 수가 있게 되어, 웨이퍼 생산성이 향상된다.As described above, according to the present invention, the insufficient deionized water is automatically supplied to the washing tank to be replenished, whereby the washing operation can be continued without interruption, thereby improving wafer productivity.
한편, 본 고안은 상술한 특정의 바람직한 실시예에 한정되지 아니하며, 청구범위에서 청구하는 본 고안의 요지를 벗어남이 없이 당해 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변경 실시가 가능할 것이다.On the other hand, the present invention is not limited to the above-described specific preferred embodiments, anyone of ordinary skill in the art to which the present invention pertains without departing from the gist of the present invention claimed in the claims may be variously modified. will be.
Claims (1)
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Application Number | Priority Date | Filing Date | Title |
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KR2019960063226U KR19980050055U (en) | 1996-12-30 | 1996-12-30 | Wafer Cleaning Liquid Supply Device |
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KR2019960063226U KR19980050055U (en) | 1996-12-30 | 1996-12-30 | Wafer Cleaning Liquid Supply Device |
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KR19980050055U true KR19980050055U (en) | 1998-10-07 |
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KR2019960063226U KR19980050055U (en) | 1996-12-30 | 1996-12-30 | Wafer Cleaning Liquid Supply Device |
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1996
- 1996-12-30 KR KR2019960063226U patent/KR19980050055U/en not_active Application Discontinuation
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