KR19980050052U - Plasma source structure of semiconductor device - Google Patents

Abstract

The present invention relates to a plasma source structure of a semiconductor device.

The present invention is a plasma source structure of a semiconductor device for generating a plasma supplied during etching or deposition of a semiconductor device, wherein the plasma source structure is a ring shape having an opening, and a plurality of spaced apart and arranged in order of increasing diameter in a constant ratio. It comprises two coils, characterized in that the power is applied to each opening of the coil.

Description

Plasma source structure of semiconductor device

The present invention relates to a semiconductor plasma device, and more particularly to a plasma source structure of a semiconductor plasma device.

In general, in a semiconductor manufacturing process, a technique using a plasma gas is used in a process of depositing a film or etching a predetermined film.

In particular, equipment that performs an etching process or a chemical vapor deposition (CVD) process usually fills a plasma gas in a chamber in which the process is performed, applies electrical energy, and proceeds while maintaining a glow discharge.

At this time, depending on the characteristics of the source for generating the plasma, the thickness of the film or the degree of etching of the pattern formed on the wafer after the process is determined.

Therefore, in order to pattern the desired film thickness or desired shape, the plasma must be stable, the plasma density must be high throughout the wafer, and the uniformity must be excellent.

Here, referring to the plasma source structure of the conventional semiconductor device, as shown in FIG. 1, the coil 1 is wound in a spiral structure so as to correspond to a large diameter wafer, and a radio frequency (RF) is formed at a start end and an end. The powder is applied to generate a plasma.

FIG. 2 is a cross-sectional view of the plasma source structure of FIG. 1 taken along the line II-II ', wherein the coils 1 are spaced apart from each other at a predetermined interval, and a ceramic isolator 2 is provided at the lower end of the coil. Below the isolator 2, a wafer 3 on which a plasma process is to be performed is provided. At this time, a predetermined plasma 4 is generated between the ceramic isolator 2 and the wafer 3.

Here, reference numeral 10 denotes a plasma chamber, and 10a denotes a gas outlet of the plasma chamber.

However, the spiral plasma source structure as described above has a single coil wound in a spiral form, and thus, it is difficult to have various control capabilities depending on the process requirements.

In addition, in the spiral plasma source structure as described above, since plasma is generated at the central portion more than the edge portion, in order to make the plasma uniform, the separate isolator 4a is provided at the bottom center of the ceramic isolator. This remains.

Accordingly, the present invention is to solve the above-mentioned conventional problems, and to form a plasma source structure made of a single coil in multiple, so as to easily control according to the process requirements, and to generate a plasma uniformly It is an object to provide a plasma source structure of an apparatus.

1 is a plan view schematically showing a plasma source structure of a semiconductor device according to the prior art;

FIG. 2 is a cross-sectional view of the plasma source structure of FIG. 1 taken along line II-II ′. FIG.

3 is a plan view schematically showing a plasma source structure of a semiconductor device according to the present invention.

FIG. 4 is a cross-sectional view of the plasma source structure of FIG. 3 taken along line IV-IV ′. FIG.

* Description of the symbols for the main parts of the drawings *

11a, 11b, 11c: coil 12: isolator

13: Wafer 14: Plasma

In order to achieve the above object of the present invention, the present invention is a plasma source structure of a semiconductor device for generating a plasma supplied during etching or deposition of the semiconductor device, the plasma source structure is an opening-shaped ring shape, diameter It comprises a plurality of coils spaced apart and arranged in the order of increasing in this constant ratio, characterized in that the power is applied to each opening of the coil, respectively.

At this time, the openings of the respective coils are characterized in that they are arranged to cross in the opposite direction.

According to the present invention, the coil constituting the plasma source is formed in a multiple structure, that is, in the form of a plurality of rings having openings, so that the control is easy and the plasma is generated uniformly according to the process requirements.

EXAMPLE

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 3 is a plan view schematically illustrating a plasma source structure of the semiconductor device according to the present invention, and FIG. 4 is a cross-sectional view of the plasma source structure of FIG. 3 taken along line IV-IV ', and reference numerals 11a and 11b may be used. Denotes a coil, 12 denotes an isolator, 13 denotes a wafer, and 14 plasma.

First, referring to FIG. 3, the plasma source structure of the semiconductor device according to the present invention includes a coil shape constituting the plasma source having a ring shape having an opening, the first and the diameters of which are arranged in a predetermined ratio. It consists of the 2nd and 3rd coils 11a, 11b, 11c. At this time, the first, second and third coils 11a, 11b, 11c are spaced apart from each other by a predetermined interval, and in this embodiment, three coils have been formed, but more can be formed.

In addition, the openings of the coils 11a, 11b, and 11c are intersected and arranged so as to face in opposite directions to each other, and predetermined power is applied to each of the openings. In this case, since a different power is applied to the plurality of coils, the power or the power may be varied or controlled during the etching or deposition process.

4 is a cross-sectional view of the plasma source structure of FIG. 3 taken along line IV-IV ', wherein the first, second, and third coils 11a, 11b, and 11c are spaced apart by a predetermined interval, and corresponded and arranged. The lower portion is provided with a ceramic isolator 12 having a predetermined thickness, and the lower portion is provided with a wafer 13 to be subjected to a plasma process or etching.

At this time, the plasma 14 is generated between the ceramic isolator 12 and the wafer 13 by the plurality of coils, and the plasma 14 is uniformly formed in all parts by the power provided in each of the plurality of coils. Is generated. Here, reference numeral 20 denotes a plasma reaction chamber, and 20a is an outlet for discharging unnecessary gas in the plasma reaction chamber.

The plasma source structure having such a configuration applies power to each of the ring-shaped coils 11a, 11b, and 11c having openings constituting the plasma source structure, thereby improving power supply control characteristics and ensuring uniformity. Without the isolator provided, a uniform plasma 14 is generated over the entire portion without concentration to the central portion.

As described in detail above, according to the present invention, the coil constituting the plasma source is formed in a multiple structure, that is, in the form of a plurality of rings having openings, so as to easily control and uniformly plasma according to the process requirements To be generated.

In addition, this invention can be implemented in various changes in the range which does not deviate from the summary.

Claims (2)

A plasma source structure of a semiconductor device for generating a plasma supplied during etching or deposition of a semiconductor device, The plasma source structure has a ring shape formed with an opening, and includes a plurality of coils spaced apart and arranged in order of increasing diameter at a constant ratio, A power source is applied to each opening of each of the coils, the plasma source structure of a semiconductor device. 2. The plasma source structure of a semiconductor device according to claim 1, wherein the openings of the respective coils are intersected and arranged so as to face in opposite directions to each other.