KR19980023672A - Electron beam landing pattern forming apparatus and method - Google Patents

Abstract

The present invention relates to an apparatus and method for forming an electron beam landing pattern, wherein an upper surface of an exposure apparatus is provided with a face plate for seating a panel, and a lower portion of the exposure apparatus is provided with a light source lamp provided at an upper side, front, rear, and left. In the exposure apparatus, the exposure lens is coupled to the fixing member at a portion spaced apart from the light source by a certain height (L) from the light source, and a plurality of racks are downwardly fixed at a bottom of one side of the fixing member. The rack has a structure connected to the forward and reverse driving motors in engagement with the pinion, and the lowest and highest points of the rising height ((L '+ α') of the exposure lens based on the light source lamp. By repeating the repetitive synthesis of an asymmetric electron beam pattern according to the amount of shift (Vs) of the G-beam exposure shifted from the center where the X-axis and Y-axis of the planar panel cross each other at least repeatedly. To form an electron beam landing pattern of a square shape, correcting the distortion of the electron beam landing pattern of the G beam and yiettara due to miss landing to avoid that can improve the color purity.

Description

Electron beam landing pattern forming apparatus and method

The present invention relates to an electron beam landing pattern forming apparatus and method, more specifically

The present invention relates to an electron beam landing pattern forming apparatus and method for shifting an exposure lens vertically to make an electron beam landing pattern asymmetrical, and to compensate for bending of an electron beam by repeated synthesis of up and down asymmetrical landings.

In general, the color cathode ray tube consists of various components, among which a front panel of the cathode ray tube is provided. This panel is completed through several processes, and there is a screen process for forming an RGB three-color fluorescent film on the inner surface of the cathode ray tube, and a shadow mask is mounted on the inside of the panel to reduce the respective fluorescent films. It is to be made.

1 and 2 show a conventional exposure apparatus. First, a case (not shown) is installed outside the exposure apparatus 10, and a shadow mask 12 is provided on the upper portion of the exposure apparatus 10. A face plate 16 is provided for fixing and seating the built-in panel 14.

On the other hand, at the lower end of the exposure apparatus 10, the light source unit 20 having the light source lamp 18 installed thereon is provided to be moved forward, backward, left, and right by a rocking device (not shown). The exposure lens 22 for each beam is provided in the part spaced apart from the light source 20 by a predetermined height L, and is refracted by the exposure lens 22 between the exposure lens 22 and the panel 14. The correction lens 24 is provided so that the light can be further refracted to reach both curved surfaces of the panel 14.

In addition, a fixing member 26 formed of a gear is provided on the outside of the exposure lens 22 so as to insert and fix the exposure lens 22. The fixing member 26 is adapted to the rotation of the motor 28. It is installed so as to rotate in engagement with the gear 30 is rotated by, the lower portion of the fixing member 26 is connected to the case to move the exposure lens 22 to move the exposure lens 22 in accordance with the position of the light source unit 20 (32) is connected and installed.

In the exposure apparatus 10 configured as described above, first, the light source scanned by the light source lamp 18 reaches each phosphor coated on the inner surface of the panel 14 through the shadow mask 12 to be exposed.

In addition, during the process of reaching the inner surface of the panel 14, the light source first follows the trajectory of the landing electron beam and passes through the exposure lens 22 and the correction lens 24, and thus the trajectory according to the size and curved surface of the panel 14. The panel 14 is reached by calibrating.

However, the exposure apparatus configured as described above is fixed at a constant height (L) to the exposure lens based on the light source lamp, and the exposure lens for the G beam among the exposure lenses for the RGB beam is formed in a plane. In the case of exposing the G beam according to the size and curved surface of the panel, when the G beam coincides with the center of the panel where the X axis and the Y axis intersect, the sides of the panel are attached. As shown in Fig. 4, the mis-landing to irradiate other fluorescent points out of the fluorescence point due to the twisting of the G-beam occurs, and there is also a problem of degrading color purity and product quality due to mixed color.

The present invention has been made to solve the above problems, and when the exposure to the G-beam, the exposure lens is moved vertically to form an electron beam landing pattern asymmetrical, and by the repeated synthesis of the up, down asymmetric landing This is to compensate for the bending of the G-beam.

The upper part of the exposure apparatus of the present invention as described above is provided with a face plate for seating the panel, the lower part of the exposure apparatus is installed to move the front, rear, left, right right side of the light source lamp installed on the top. In an exposure apparatus in which an exposure lens is coupled to a fixing member at a portion separated from the light source by a predetermined height (L), a plurality of racks are installed downward at a predetermined length on one bottom surface of the fixing member. And the structure connected to the forward and reverse driving motors, and at least several times the lowest and highest points of the rising height ((L '+ α') of the exposure lens, based on the light source lamp, at least several times. A rectangular electron beam landing pattern is formed by iterative synthesis of an asymmetric electron beam pattern according to the shift amount (Vs) of the G-beam exposure shifted from the center where the X-axis and the Y-axis intersect to the Y-axis. By sex, correcting the distortion of the electron beam landing pattern of the G beam and yiettara is characterized in that to improve the color purity due to the miss landing prevented.

1 is a side view showing a general exposure apparatus

FIG. 2 is a schematic diagram schematically showing FIG. 1

3 is a view illustrating an electron beam landing pattern according to a G beam;

4 is a view showing an exposure state of a G beam according to FIG. 3;

5 illustrates an electron beam landing pattern forming apparatus and method of the present invention.

6 is a schematic view of FIG.

7 is a view showing an electron beam landing pattern shape according to the movement amount Vs of the G beam, (a) shows a case where the movement amount is small, (b) shows a case where the movement amount is large, and (c) shows (A) A diagram showing an electron beam landing pattern by combining (B)

8 is a view illustrating an exposure state of a G beam according to FIG. 7;

Explanation of symbols for the main parts of the drawings

10: exposure apparatus 12: shadow mask

14 panel 16: face plate

18: light source lamp 20: light source

22: exposure lens 24: correction lens

26,40: fixing member 28: motor

30: gear 32: moving member

42: rack 44: forward and reverse drive motor

46: pinion

5 and 6 are views illustrating an electron beam landing pattern forming apparatus and method according to the present invention, the same reference numerals as in FIGS. 1 and 4 denote the same parts, and thus description thereof will be omitted. Only the points different from FIG. 4 will be described.

5 and 6, an upper surface of the exposure apparatus 10 is provided with a face plate 16 for seating the panel 14, and a light source lamp is provided at the lower end of the exposure apparatus 10. The light source unit 20 having the upper portion 18 is provided to be moved forward, rear, left, and right, and the beams are separated from the light source unit 20 at a predetermined height ((L '+ α'). An exposure lens 22 is provided, and a correction lens 24 is provided between the exposure lens 22 and the panel 14 so as to reach both curved surfaces of the panel 14.

Here, in the present invention, the fixing member 40 is provided to the outside of the exposure lens 22 to insert and fix the exposure lens 22. The rack 42 is provided at one bottom of the fixing member 40. It is installed downward to a certain length, the rack 42 is installed to rotate in engagement with the pinion 46 connected to the forward, reverse drive motor (44).

In the exposure light apparatus 10 of the present invention configured as described above, first, a light source scanned from a light source lamp 18 installed under the shadow mask 12 is applied to the inner surface of the panel 14 through the shadow mask 12. Each of the phosphors is exposed to light, and the light source reaches the inner surface of the panel 14. First, the light source follows the trajectory of the landing electron beam, and passes through the correction lens 24. The trajectory by the curved surface is reached.

In the process of performing the exposure process as described above, the present invention first, when exposing the G-beam, the exposure lens 22 for the G-beam is exposed at a constant height (L ') position relative to the light source lamp 18 At this time, the pinion 46 in the clockwise direction by the operation of the forward and reverse drive motor 44 installed in the lower portion of the holding member 40 as shown in the accompanying drawings shown in Figure 5 and 6 When rotated, the rack 42 engaged with the pinion 46 rises vertically, and as a result, the exposure lens 22 with respect to the G beam is raised at a constant distance (L '+ α').

When the lowest point and the highest point are repeated at least two times at the rising height (L '+ α') of the exposure lens 22 with respect to the light source lamp 18, the accompanying drawings as shown in FIG. As shown, the panel 14 is asymmetrical electron beam such as (a) and (b) according to the amount of movement (Vs) of the G-beam that is vertically moved about the Y-axis at the center where the X-axis and Y-axis cross on the plane. The landing pattern is formed, and thus, the asymmetric electron beam pattern is repeatedly formed to form a square electron beam landing pantone as shown in (c). As shown in FIG. This is to correct the distortion of the landing pattern.

As described above, the present invention forms an electron beam landing pattern asymmetrically by moving the exposure lens vertically during exposure to the G beam, and compensates for the bending of the G beam by repetitive synthesis of the up and down asymmetric landings. Prevention has the effect of improving color purity and maximizing product performance.

Claims (2)

The upper part of the exposure apparatus is provided with a face plate for seating the panel, and the lower part of the exposure apparatus is provided so that the light source part provided with the light source lamp on the upper part is movable to front, rear, left and right, and has a fixed height from the light source part. An exposure apparatus in which an exposure lens is coupled to a fixing member at a portion spaced by (L), wherein a plurality of racks are installed downward at a predetermined length on one bottom surface of the fixing member, and the racks are connected to the pinion in a fixed state. Electron beam landing pattern forming apparatus characterized in that connected to the reverse drive motor. The lowest and highest points of the rising height ((L '+ α') of the exposure lens are repeated at least several times on the basis of the light source lamp to move from the center where the X and Y axes of the flat panel intersect to the Y axis. A method of forming an electron beam landing pattern, characterized in that to form a rectangular electron beam landing pattern by repetitive synthesis of an asymmetric electron beam pattern in accordance with the shift amount Vs of G beam exposure.