KR19980022272A - Manufacturing method of light emitting device using porous silicon - Google Patents

Abstract

The present invention relates to a method of manufacturing a light emitting device using porous silicon. Forming porous silicon on the silicon wafer, patterning a predetermined portion on the electrode, placing the silicon wafer with the porous silicon-formed portion in a vacuum chamber facing down, and placing the patterned electrode beneath it, a cutter (cutter) removing the porous silicon from the silicon wafer so that the porous silicon falls on the electrode by gravity, heating the electrode to bond the porous silicon with the electrode, and removing the patterned photoresist, There is provided a method of manufacturing a light emitting device, comprising the steps of forming a silicon dioxide barrier on a portion where the photoresist is removed and bonding another electrode on the electrode to which the porous silicon is bonded. do.

Description

Manufacturing method of light emitting device using porous silicon

The present invention relates to a method of manufacturing a light emitting device using porous silicon, and more particularly, to a method of forming a porous silicon pattern on an electrode.

The display device includes a cathode ray tube using high-speed electron beams, a fluorescent display panel using low-speed electron beams, a plasma display device using gas discharge, and a so-called E.L. There are many kinds of display devices, such as liquid crystal display devices using electro-optic effects. These types of display devices have different functions and structural characteristics, and thus are selectively applied according to their characteristics.

Common to these display devices is that they visualize electrical image signals or data signals, etc., which are structurally and functionally improved in various aspects.

Recently, the development trend of display apparatuses is to make a display apparatus with the thinnest possible thickness while having a large screen with high definition due to the demand of a large amount of public information display media and the appearance of a large-screen high definition television called HDTV.

In accordance with this development trend, research on a porous display device using porous silicon is being actively conducted.

The display device using the porous silicon emits light in the visible region according to the porous characteristics of the substrate when a predetermined voltage or light is applied to the porous silicon.

A display device using dual electroluminescence has a porous silicon layer and a contact point as essential components, and a contact point includes a metal thin film, indium tin oxide (ITO), silicon carbide, a conductive polymer, or the like.

Porous silicon has an advantage of excellent quantum efficiency, which is determined as the ratio of photons emitted to electrons applied from the outside.

1 is a view showing the structure of a light emitting device using such porous silicon. Specifically, the porous silicon 14 pattern is formed between the two electrodes 11 and 12. The porous silicon pattern 14 is patterned by a silicon dioxide barrier 13.

When a voltage is applied to the electrodes 11 and 12 of the light emitting device, the porous silicon 14 emits light to serve as a light source. In this case, the light of the emitted wavelength is a visible light region and a part of ultraviolet light.

The porous silicon is prepared by placing a silicon single crystal in a hydrofluoric acid (HF) solution and then anodizing the surface by an electrochemical method. That is, the color of light is determined.

The light emitting device using the porous silicon has not been put to practical use until now, because research on a method of manufacturing the light emitting device using the porous silicon is not yet sufficient.

The present invention is to provide a method for manufacturing a light emitting device by bonding porous silicon to an electrode.

1 is a view showing the structure of a light emitting device using porous silicon

2A to 2F are flowcharts sequentially showing a manufacturing process of a light emitting device according to the present invention.

* Explanation of symbols for main parts of the drawings

11, 12, 23, 26: electrode 13, 25: silicon dioxide

14, 22: porous silicon 21: silicon wafer

24 photoresist pattern 27 cutter

In order to achieve the above technical problem, the present invention provides a method of forming porous silicon on a silicon wafer, patterning a predetermined portion on an electrode, and placing a silicon wafer such that a portion in which a porous silicon is formed in a vacuum chamber faces downward. Placing a patterned electrode thereunder; removing the porous silicon from the silicon wafer with a cutter so that the porous silicon falls on the electrode by gravity; and heating the electrode to bond the porous silicon to the electrode. And removing the patterned photoresist, forming a silicon dioxide barrier on the portion where the photoresist is removed, and bonding another electrode on the electrode to which the porous silicon is bonded to manufacture a light emitting device. A method of manufacturing a light emitting device is provided.

Hereinafter, the manufacturing method of the present invention according to the accompanying drawings will be described in detail.

2A to 2F are flowcharts schematically illustrating a manufacturing process of a light emitting device according to the present invention. First, one surface of the silicon wafer 21 is anodized under predetermined conditions to form porous silicon 22 (FIG. 2A). Next, a photoresist is applied to one surface of the electrode 23, and then patterned 24 so that the region where the porous silicon is to be located is exposed (FIG. 2B).

The silicon wafer 21 and the electrode 23 are disposed in a vacuum chamber. At this time, the silicon wafer 21 is disposed on the upper portion of the chamber with the surface 22 on which the porous silicon is formed face down, and the electrode 23 is disposed on the lower portion of the chamber (FIG. 2C).

When the porous silicon 22 is removed from the silicon wafer 21 by the cutter 24, the porous silicon 22 is dropped downward and placed on the electrode 23 by the vacuum (FIG. 2D). When the electrode 23 on which the porous silicon 22 is placed is taken out of the chamber and heated, the porous silicon is bonded to the surface of the electrode 23. Then, after removing the photoresist pattern, a silicon dioxide pattern is formed in place to form a barrier between the porous silicon (FIG. 2E).

Finally, the electrode 25 is bonded onto the porous silicon pattern to complete the light emitting device (FIG. 2F).

As described above, the method of manufacturing a light emitting device according to the present invention is to bond porous silicon and an electrode using gravity, and the manufacturing method is easy and simple.

Claims (1)

Forming porous silicon on the silicon wafer, patterning a predetermined portion on the electrode, placing the silicon wafer with the porous silicon-formed portion facing down in the vacuum chamber, and placing the patterned electrode beneath it, a cutter (cutter) removing the porous silicon from the silicon wafer so that the porous silicon falls on the electrode by gravity, heating the electrode to bond the porous silicon with the electrode, and removing the patterned photoresist, Forming a silicon dioxide barrier on the portion from which the photoresist has been removed, and manufacturing a light emitting device by bonding another electrode on the electrode to which the porous silicon is bonded.