KR102751449B1 - 고 처리량 스캔된 빔 이온 주입기용 스캔 및 교정자 자석 디자인 - Google Patents

고 처리량 스캔된 빔 이온 주입기용 스캔 및 교정자 자석 디자인 Download PDF

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Publication number
KR102751449B1
KR102751449B1 KR1020217019690A KR20217019690A KR102751449B1 KR 102751449 B1 KR102751449 B1 KR 102751449B1 KR 1020217019690 A KR1020217019690 A KR 1020217019690A KR 20217019690 A KR20217019690 A KR 20217019690A KR 102751449 B1 KR102751449 B1 KR 102751449B1
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South Korea
Prior art keywords
workpiece
ion beam
scanner
ion
scan
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KR1020217019690A
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Korean (ko)
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KR20210099036A (ko
Inventor
에드워드 아이즈너
보 밴더버그
Original Assignee
액셀리스 테크놀러지스, 인크.
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H01J37/1474—Scanning means
    • H01J37/1475—Scanning means magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1536—Image distortions due to scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/31708—Ion implantation characterised by the area treated unpatterned

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
KR1020217019690A 2018-12-13 2019-11-06 고 처리량 스캔된 빔 이온 주입기용 스캔 및 교정자 자석 디자인 Active KR102751449B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/218,884 US10553392B1 (en) 2018-12-13 2018-12-13 Scan and corrector magnet designs for high throughput scanned beam ion implanter
US16/218,884 2018-12-13
PCT/US2019/060084 WO2020123063A1 (en) 2018-12-13 2019-11-06 Scan and corrector magnet designs for high throughput scanned beam ion implanter

Publications (2)

Publication Number Publication Date
KR20210099036A KR20210099036A (ko) 2021-08-11
KR102751449B1 true KR102751449B1 (ko) 2025-01-07

Family

ID=69160019

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217019690A Active KR102751449B1 (ko) 2018-12-13 2019-11-06 고 처리량 스캔된 빔 이온 주입기용 스캔 및 교정자 자석 디자인

Country Status (6)

Country Link
US (2) US10553392B1 (cg-RX-API-DMAC7.html)
JP (1) JP7474255B2 (cg-RX-API-DMAC7.html)
KR (1) KR102751449B1 (cg-RX-API-DMAC7.html)
CN (1) CN113169011B (cg-RX-API-DMAC7.html)
TW (1) TWI827743B (cg-RX-API-DMAC7.html)
WO (1) WO2020123063A1 (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170005013A1 (en) * 2015-06-30 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Technique
US10553392B1 (en) * 2018-12-13 2020-02-04 Axcelis Technologies, Inc. Scan and corrector magnet designs for high throughput scanned beam ion implanter
US11217427B1 (en) * 2020-11-27 2022-01-04 Applied Materials, Inc. System, apparatus and method for bunched ribbon ion beam
US11560995B1 (en) 2021-07-28 2023-01-24 Hyundai Mobis Co., Ltd. Lamp for vehicle and vehicle including the same
CN117476431B (zh) * 2023-12-28 2024-04-12 杭州泽天春来科技股份有限公司 四极杆射频电源扫描控制方法、系统及可读存储介质

Citations (2)

* Cited by examiner, † Cited by third party
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JP2017539062A (ja) * 2014-12-26 2017-12-28 アクセリス テクノロジーズ， インコーポレイテッド ビーム減速を伴うイオン注入器におけるビーム角度調整のためのシステムおよび方法
JP2018516434A (ja) * 2015-04-23 2018-06-21 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 注入処理制御装置及び方法

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JPS62295347A (ja) 1986-04-09 1987-12-22 イクリプス・イオン・テクノロジ−・インコ−ポレイテツド イオンビ−ム高速平行走査装置
US5834786A (en) * 1996-07-15 1998-11-10 Diamond Semiconductor Group, Inc. High current ribbon beam ion implanter
JP3567749B2 (ja) * 1998-07-22 2004-09-22 日新電機株式会社 荷電粒子ビームの分布測定方法およびそれに関連する方法
US7550751B2 (en) * 2006-04-10 2009-06-23 Axcelis Technologies, Inc. Ion beam scanning control methods and systems for ion implantation uniformity
US7615763B2 (en) * 2006-09-19 2009-11-10 Axcelis Technologies, Inc. System for magnetic scanning and correction of an ion beam
WO2009045722A1 (en) * 2007-09-28 2009-04-09 Varian Semiconductor Equipment Associates, Inc. Two-diemensional uniformity correction for ion beam assisted etching
US8138484B2 (en) * 2010-04-28 2012-03-20 Axcelis Technologies Inc. Magnetic scanning system with improved efficiency
US20110272567A1 (en) * 2010-05-05 2011-11-10 Axcelis Technologies, Inc. Throughput Enhancement for Scanned Beam Ion Implanters
US8637838B2 (en) * 2011-12-13 2014-01-28 Axcelis Technologies, Inc. System and method for ion implantation with improved productivity and uniformity
CN102779711B (zh) * 2012-08-01 2014-11-05 西安工业大学 具有超大离子束发散角的离子源
US9029811B1 (en) * 2013-10-22 2015-05-12 Varian Semiconductor Equipment Associates, Inc. Apparatus to control an ion beam
US9520204B2 (en) * 2013-12-26 2016-12-13 Varian Semiconductor Equipment Associates, Inc. Cold stripper for high energy ion implanter with tandem accelerator
JP6195538B2 (ja) * 2014-04-25 2017-09-13 住友重機械イオンテクノロジー株式会社 イオン注入方法及びイオン注入装置
US9679739B2 (en) 2014-12-26 2017-06-13 Axcelis Technologies, Inc. Combined electrostatic lens system for ion implantation
US9728371B2 (en) * 2015-05-27 2017-08-08 Nissin Ion Equipment Co., Ltd. Ion beam scanner for an ion implanter
JP6517163B2 (ja) * 2016-03-18 2019-05-22 住友重機械イオンテクノロジー株式会社 イオン注入装置及びスキャン波形作成方法
US10553392B1 (en) * 2018-12-13 2020-02-04 Axcelis Technologies, Inc. Scan and corrector magnet designs for high throughput scanned beam ion implanter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017539062A (ja) * 2014-12-26 2017-12-28 アクセリス テクノロジーズ， インコーポレイテッド ビーム減速を伴うイオン注入器におけるビーム角度調整のためのシステムおよび方法
JP2018516434A (ja) * 2015-04-23 2018-06-21 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 注入処理制御装置及び方法

Also Published As

Publication number Publication date
US20200194221A1 (en) 2020-06-18
US11037754B2 (en) 2021-06-15
CN113169011B (zh) 2024-07-02
JP2022512302A (ja) 2022-02-03
CN113169011A (zh) 2021-07-23
WO2020123063A1 (en) 2020-06-18
KR20210099036A (ko) 2021-08-11
TW202038287A (zh) 2020-10-16
TWI827743B (zh) 2024-01-01
JP7474255B2 (ja) 2024-04-24
US10553392B1 (en) 2020-02-04

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