KR102669497B1 - Control device and method of robot manipulator for wafer measurement point inspection - Google Patents

Abstract

A control device and method for a robot manipulator for wafer measurement point inspection are disclosed. When at least one measurement point among the wafers loaded on the robot manipulator is selected, the control device includes a coordinate system conversion unit that converts the measurement point into polar coordinates, and a DH (Denavit-Hartenberg) parameter for measuring points converted to polar coordinates and the thickness of the wafer. It includes a parameter correction unit that generates correction parameters by reflecting them, and a kinematics calculation section that performs a kinematics calculation of the robot manipulator using the correction parameters.

Description

{Control device and method of robot manipulator for wafer measurement point inspection}

The present invention relates to a control device for a robot manipulator, and more specifically, a control device for a robot manipulator for inspecting wafer measurement points that controls the robot manipulator to measure the thin film composition and thickness for any measurement point on the wafer, and It's about method.

When a user selects a random point on a wafer as a measurement point and controls the robot manipulator in the workspace, the position of the measurement point is calculated based on the robot reference coordinate system whenever the position of the selected point changes (normal kinematics). Alternatively, the joint angles of the robot corresponding to the measurement position must be directly calculated (inverse kinematics), and this process is quite difficult.

In other words, from the user's point of view, a problem that can be extremely burdensome arises because the robot manipulator must be operated through forward kinematics and inverse kinematics calculations by directly considering the coordinates of the position to be measured.

Korea Patent Publication No. 10-2022-0030398 (2022.03.11.)

The problem to be solved by the present invention is a wafer measurement point that controls the operation of the robot manipulator so that the ion beam of the ion scattering spectrometer is irradiated to the measurement point when at least one measurement point for measuring the thin film composition and thickness of the wafer is selected. To provide a control device and method for a robot manipulator for inspection.

In order to solve the above problem, the control device of the present invention includes a coordinate system conversion unit that converts the measurement point into a polar coordinate system when at least one measurement point is selected among the wafers loaded on the robot manipulator, a measurement point converted to the polar coordinate system, and It includes a parameter correction unit that generates correction parameters by reflecting the thickness of the wafer in DH (Denavit-Hartenberg) parameters, and a kinematics calculation section that performs a kinematics calculation of the robot manipulator using the correction parameters.

Additionally, it may further include a drive control unit that adjusts the position and direction of the robot manipulator according to the joint angle calculated from the kinematic calculation.

In addition, the coordinate system conversion unit sets a wafer coordinate system based on the last rotating joint of the robot manipulator, and when the measurement point is selected on the set wafer coordinate system, it converts the measurement point into the polar coordinate system. do.

In addition, when the robot manipulator is a 5-degree-of-freedom robot, the parameter correction unit reflects the measurement point of the polar coordinate system and the thickness of the wafer in the DH parameter of the link corresponding to the end-effector of the robot manipulator. This is characterized in that a correction parameter is generated.

In addition, when performing calculations on the forward kinematics of the robot manipulator, the kinematics calculation unit is characterized in that it applies the correction parameters to the following equation to calculate a transformation matrix representing the position and direction related to each joint.

[Equation]

Here, T means the transformation matrix, i means the coordinate system, θ _i means the angle between x _i -1 and x _i based on z _i -1 at the joints of the robot manipulator, and α _i means the angle between It means the angle of z _i -1 and z _i based on x _i in the joint of the manipulator, a _i means the shortest distance between joint i and joint i+1 in the joint of the robot manipulator, and d _i is the robot It refers to the distance between x _i -1 and x _i 'along z _i -1 at the joint of the manipulator.

In addition, the kinematics calculation unit is characterized in that it calculates a transformation matrix corresponding to the measurement point by applying the calculated transformation matrix for each joint to the following equation.

[Equation]

In addition, the kinematics calculation unit is characterized in that it calculates the position and direction of the measurement point with respect to a reference coordinate system based on the base frame of the robot manipulator using the calculated transformation matrix of the measurement point.

In addition, when performing an operation on the inverse kinematics of the robot manipulator, the kinematics calculation unit measures the measurement point using the calculated transformation matrix of each joint, the transformation matrix of the measurement point, and the geometric structure of the robot manipulator. It is characterized in that the joint angle of the robot manipulator is calculated for.

In addition, the geometry calculation unit is characterized by reflecting the geometric structure based on a trigonometric function using the length of each link of the robot manipulator and the adjustable joint angle for each joint.

The control method of the present invention includes the steps of converting the measurement point into a polar coordinate system by a control device controlling the operation of the robot manipulator when at least one measurement point is selected among the wafers loaded on the robot manipulator, and converting the measurement point into a polar coordinate system by the control device. generating a correction parameter by reflecting the measured measurement point and the thickness of the wafer in the DH parameter, and performing a kinematic calculation of the robot manipulator by the control device using the correction parameter.

According to an embodiment of the present invention, when at least one measurement point for measuring the thin film composition and thickness of the wafer is selected, the measurement point is converted from the wafer coordinate system to the polar coordinate system, and the converted measurement point and the wafer are DH based on the thickness. After correcting the parameters, the operation of the robot manipulator can be controlled by performing kinematic calculations of the robot manipulator.

Through this, users can easily measure thin film composition and thickness for their desired measurement point without going through existing complicated processes.

1 is a schematic diagram illustrating a control system of a robot manipulator according to an embodiment of the present invention.
Figure 2 is a diagram for explaining a robot manipulator according to an embodiment of the present invention.
Figure 3 is a diagram for explaining the coordinate system relationship of each joint according to an embodiment of the present invention.
Figure 4 is a diagram for explaining the coordinate system relationship for the joints of a robot manipulator according to an embodiment of the present invention.
Figure 5 is a diagram for explaining the coordinate system of the end effect device of the robot manipulator according to an embodiment of the present invention.
Figure 6 is a diagram for explaining the operation of a robot manipulator for measuring a specific measurement point of a wafer according to an embodiment of the present invention.
Figure 7 is a block diagram for explaining a control device according to an embodiment of the present invention.
Figure 8 is a diagram for explaining a measurement point using a polar coordinate system according to an embodiment of the present invention.
Figure 9 is a flowchart for explaining a control method of a robot manipulator according to an embodiment of the present invention.
Figure 10 is a block diagram for explaining a computing device according to an embodiment of the present invention.

Below, with reference to the attached drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily implement the present invention. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein. In order to clearly explain the present invention in the drawings, parts unrelated to the description are omitted, and similar parts are given similar reference numerals throughout the specification.

In this specification and drawings (hereinafter referred to as “this specification”), duplicate descriptions of the same components are omitted.

Also, in this specification, when a component is mentioned as being 'connected' or 'connected' to another component, it may be directly connected or connected to the other component, but may be connected to the other component in the middle. It should be understood that may exist. On the other hand, in this specification, when it is mentioned that a component is 'directly connected' or 'directly connected' to another component, it should be understood that there are no other components in between.

Additionally, the terms used in this specification are merely used to describe specific embodiments and are not intended to limit the present invention.

Also, in this specification, singular expressions may include plural expressions, unless the context clearly dictates otherwise.

In addition, in this specification, terms such as 'include' or 'have' are only intended to designate the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, and one or more It should be understood that this does not exclude in advance the presence or addition of other features, numbers, steps, operations, components, parts, or combinations thereof.

Also, in this specification, the term 'and/or' includes a combination of a plurality of listed items or any of the plurality of listed items. In this specification, 'A or B' may include 'A', 'B', or 'both A and B'.

Additionally, in this specification, detailed descriptions of well-known functions and configurations that may obscure the gist of the present invention will be omitted.

FIG. 1 is a schematic diagram for explaining a control system of a robot manipulator according to an embodiment of the present invention, FIG. 2 is a diagram for explaining a robot manipulator according to an embodiment of the present invention, and FIG. 3 is a schematic diagram for explaining a control system of a robot manipulator according to an embodiment of the present invention. Figure 4 is a diagram for explaining the coordinate system relationship of each joint according to an embodiment of the present invention, Figure 4 is a diagram for explaining the coordinate system relationship for the joints of the robot manipulator according to an embodiment of the present invention, and Figure 5 is a diagram for explaining the coordinate system relationship of the robot manipulator according to an embodiment of the present invention. is a diagram for explaining the coordinate system of the end effect device, and Figure 6 is a diagram for explaining the operation of a robot manipulator for measuring a specific measurement point of a wafer according to an embodiment of the present invention.

1 to 3, the control system 700 controls the ion beam 450 of the ion scattering spectrometer 400 when an arbitrary measurement point 350 is selected for measuring the thin film composition and thickness of the wafer 300. The robot manipulator 200 is driven to irradiate the corresponding measurement point 350. The control system 700 includes a control device 100, a robot manipulator 200, an ion scattering spectrometer 400, and a user terminal 600.

The control device 100 controls the operation of the robot manipulator 200. When at least one measurement point 350 of the wafer 300 is selected by user input, the control device 100 drives the robot manipulator 200 to measure the thin film composition and thickness corresponding to the selected measurement point. Control. At this time, the control device 100 automatically performs the kinematic calculation of the robot manipulator 200 to control the wafer 300 to move quickly and accurately. Details will be explained with reference to FIGS. 7 and 8.

The robot manipulator 200 loads the wafer 300 and transfers the loaded wafer 300 to a preset position. To this end, the robot manipulator 200 may be a multi-degree-of-freedom robot, and preferably a 5-degree-of-freedom robot.

Hereinafter, the coordinate system relationship of each joint that occurs when the robot manipulator 200 is a 5-degree-of-freedom robot will be described. As shown in Figure 3, the coordinate system of each joint can be expressed as four variables a _i , d _i , α _i , and θ _i to use DH (Denavit-Hartenberg) notation. a _i is the distance between the coordinate systems O _i and O _i ', meaning the shortest distance between joint i and joint i+1 (based on the x _i axis). d _i is the distance between x _i -1 and x _i 'along z _i -1, indicating the position of O _i '. α _i is the angle (torsion angle) between z _i -1 and z _i based on x _i , and has a positive value when rotating counterclockwise. θ _i is the angle between x _i -1 and x _i based on z _i -1, and has a positive value when rotating counterclockwise. That is, when using the DH notation, the DH parameters a _i , d _i , α _i , and θ _i for the robot manipulator 200 having a type of revolute joint or prismatic joint are set for each joint i. It can be calculated. As shown in Figure 4, by assigning a plurality of coordinate systems ({0}, {1}, {2}, {3}, {4}, {5}), DH parameters can be obtained for each joint.

At this time, the end-effector coordinate system {5} of the robot manipulator 200 can be expressed in three positions and two directions, and the position and direction of the end-effector in the task space are It is defined as x, y, z are position values expressed based on the reference coordinate system ({0}), is the azimuth created by joint 3, joint 4, and joint 5, means the direction created by joint 2. The angle in the joint space is It can be expressed as In other words, regular kinematics using the transformation matrix is It can be expressed as (Figure 5).

Meanwhile, the robot manipulator 200 is located inside the chamber 500. The chamber 500 may be maintained in a vacuum state and may be connected to the ion scattering spectrometer 400 so that the ion beam 450 is irradiated therein. The robot manipulator 200 is divided into a reference coordinate system ({0}) based on a base frame and a wafer coordinate system ({4}) based on the last rotary joint of the robot manipulator 200. Adjust the position of the wafer 300. For example, the robot manipulator 200 transfers a plurality of joints based on the reference coordinate system ({0}) and the wafer coordinate system ({4}), and finally determines the azimuth of the end effect device where the wafer 300 is loaded. ) to adjust. Through this, the robot manipulator 200 causes the ion beam 450 to be irradiated at a right angle to the measurement point 350. That is, the measurement point 350 may vary depending on user input as shown in (a), (b), (c), and (d) of Figure 6, but the robot manipulator 200 always keeps the measurement point 350 at the same location. It is transferred to (a position where the ion beam 450 is irradiated at a right angle).

The ion scattering spectrometer 400 irradiates the ion beam 450. The ion scattering spectrometer 400 irradiates the ion beam 450 and receives a reflected scattered beam of the irradiated ion beam 450. The ion scattering spectrometer 400 measures the thin film composition and thickness of the wafer 300 using the received scattered beam.

The user terminal 600 communicates wired and wireless with the control device 100. The user terminal 600 may receive status information of the robot manipulator 200 from the control device 100. The user terminal 600 outputs the received status information to help the user intuitively recognize the operating status of the robot manipulator 200. In other words, the user terminal 600 can solve the problem that it is difficult for the user to determine the exact operating state of the robot manipulator 200 as it operates inside the chamber 500. Additionally, the user terminal 600 may remotely input the user input by transmitting the user input related to the measurement point 350 to the control device 100.

FIG. 7 is a block diagram for explaining a control device according to an embodiment of the present invention, and FIG. 8 is a diagram for explaining a measurement point using a polar coordinate system according to an embodiment of the present invention.

1 to 8, the control device 100 includes a communication unit 10, an input unit 30, a control unit 50, and a storage unit 70.

The communication unit 10 communicates with the robot manipulator 200 and the user terminal 600. The communication unit 10 transmits a control signal for driving the robot manipulator 200 to the robot manipulator 200. The communication unit 10 transmits status information of the robot manipulator 200 to the user terminal 600. Additionally, the communication unit 10 receives user input related to the measurement point 350 from the user terminal 600. Here, the user input includes coordinate information about the measurement point 350, and the coordinate information may be coordinates (x, y) in the wafer coordinate system ({4}).

The input unit 30 receives user input related to the measurement point 350 on the wafer 300. Here, the user input includes coordinate information about the measurement point 350, and the coordinate information may be coordinates in the wafer coordinate system {4}.

The control unit 50 performs overall control of the control device 100. The control unit 50 includes a coordinate system conversion unit 51, a parameter correction unit 52, and a kinematics calculation unit 53, and may further include a drive control unit 54.

When a measurement point is selected by user input, the coordinate system conversion unit 51 converts the measurement point from coordinates (x, y) in the wafer coordinate system ({4}) to coordinates (r, ϕ) in the polar coordinate system. That is, the coordinate conversion unit 51 sets the wafer coordinate system {4} based on the last rotating joint of the robot manipulator 200, and when a measurement point is selected on the set wafer coordinate system {4}, Convert the measurement point to polar coordinates.

The measurement point may be at least one point among the wafers 300 loaded on the robot manipulator 100. The coordinate system conversion unit 51 converts the measurement point into a polar coordinate system using [Equation 1].

The parameter correction unit 52 generates correction parameters by reflecting the measurement point (r, ϕ) converted to polar coordinates and the thickness of the wafer 300 to the DH parameter for kinematic calculation of the robot manipulator 200. Here, when the robot manipulator 200 is a 5-degree-of-freedom robot, the parameter correction unit 52 can obtain correction parameters as shown in [Table 1].

link a _i α _i d _i θ _i One 0 - π/2 d ₁ 0 2 0 π/2 d ₂ θ ₂ 3 a ₃ 0 d ₃ θ ₃ + π/2 4 a ₄ 0 d ₄ θ ₄ 5 r 0 d _t
(wafer thickness) θ ₅ + ϕ

That is, the parameter correction unit 52 generates correction parameters by reflecting the polar coordinate measurement point and the thickness of the wafer 300 in the DH parameter of link 5, which is the link corresponding to the end effect device of the robot manipulator 200. The kinematics calculation unit 53 performs a kinematics calculation of the robot manipulator 200 using correction parameters. At this time, the kinematics calculation unit 53 may perform calculations on the forward kinematics and inverse kinematics of the robot manipulator 200. When performing calculations on the forward kinematics of the robot manipulator 200, the kinematics calculation unit 53 applies the correction parameters of [Table 1] to [Equation 2] to obtain a coordinate system {i-1} based on the coordinate system {i-1}. Calculate the transformation matrix (T) representing the position and direction of i}. That is, the kinematics calculation unit 53 can calculate a transformation matrix representing the position and direction related to each joint based on the correction parameter.

Here, T means the transformation matrix, and i means the coordinate system. θ _i means the angle between x _i -1 and x _i based on z _i -1 at the joints of the robot manipulator, and α _i means the angle between z _i -1 and z based on x _i at the joints of the robot manipulator. It means the angle of _i . a _i means the shortest distance between joint i and joint i+1 in the joint of the robot manipulator, and d _i means the distance between x _i -1 and x _i ' along z _i -1 in the joint of the robot manipulator. do. At this time, the transformation matrix is 1 row and 1 column ( ), 1 row 2 columns ( ), 1 row 3 columns ( ), 2 rows 1 column ( ), 2 rows 2 columns ( ), 2 rows and 3 columns ( ), 3 rows 1 column (0), 3 rows 2 columns ( ), 3 rows and 3 columns ( )'s transformation matrix represents the direction of the coordinate system {i}, and has 1 row and 4 columns ( ), 2 rows and 4 columns ( ), 3 rows and 4 columns ( )'s transformation matrix represents the position of the coordinate system {i}.

The kinematics calculation unit 53 calculates a transformation matrix corresponding to the measurement point 350 by applying the calculated transformation matrix for each joint to [Equation 3]. Through this, the kinematics calculation unit 53 uses the calculated transformation matrix of the measurement point 350 to determine the position and direction of the measurement point 350 with respect to the reference coordinate system {0} based on the base frame of the robot manipulator 200. It can be calculated.

When performing an operation on the inverse kinematics of the robot manipulator 200, the kinematics calculation unit 53 uses the calculated transformation matrix of each joint, the transformation matrix of the measurement point, and the geometric structure of the robot manipulator 200 to determine the robot manipulator (200). 200), the analytical solution is calculated. That is, the kinematics calculation unit 53 calculates the joint angle of the robot manipulator 200 for measuring the measurement point 350 through calculation on inverse kinematics. At this time, the kinematics calculation unit 53 may reflect the geometric structure based on a trigonometric function using the length of each link of the robot manipulator 200 and the adjustable joint angle for each joint.

The drive control unit 54 adjusts the position and direction of the robot manipulator 200 according to the joint angle calculated from kinematic calculation. To this end, the drive control unit 54 generates control signals for the position and direction of the robot manipulator 200. The drive control unit 54 may control the drive by transmitting the generated control signal to the robot manipulator 200.

The storage unit 70 stores a program or algorithm for driving the control device 100. The storage unit 70 stores specification information regarding thin film composition and thickness measurement. For example, the storage unit 70 stores the length of each link of the robot manipulator 200, the adjustable joint angle of each joint, the thickness of the wafer 300, etc. The storage unit 70 includes a flash memory type, hard disk type, multimedia card micro type, card type memory (for example, SD or XD memory, etc.), Random Access Memory (RAM), Static Random Access Memory (SRAM), Read-Only Memory (ROM), Electrically Erasable Programmable Read-Only Memory (EEPROM), Programmable Read-Only Memory (PROM), magnetic memory, It may include at least one storage medium of a magnetic disk and an optical disk.

Figure 9 is a flowchart for explaining a control method of a robot manipulator according to an embodiment of the present invention.

Referring to FIGS. 1 and 9 , the control method of the robot manipulator 200 includes, when at least one measurement point for measuring the thin film composition and thickness of the wafer 300 is selected, converting the measurement point from the wafer coordinate system to the polar coordinate system, and , After correcting the DH parameters based on the converted measurement point and wafer thickness, the kinematic calculation of the robot manipulator is performed to control the operation of the robot manipulator. Through this, the control method helps users easily measure thin film composition and thickness for their desired measurement point without going through existing complex processes.

In step S110, the control device 100 receives information about the selected measurement point for measuring the thin film composition and thickness of the wafer 300. The measurement point may be determined by user input, and at least one point may be selected.

In step S120, the control device 100 converts the measurement point from the wafer coordinate system to the polar coordinate system. That is, the control device 100 converts the measurement point from coordinates (x, y) in the wafer coordinate system to coordinates (r, ϕ) in the polar coordinate system. At this time, the control device 100 sets a wafer coordinate system based on the last rotating joint of the robot manipulator 200, and when a measurement point is selected on the set wafer coordinate system, it converts the measurement point into a polar coordinate system.

In step S130, the control device 100 generates correction parameters. The control device 100 generates correction parameters by reflecting the measurement point (r, ϕ) converted to polar coordinates and the thickness of the wafer 300 to the DH parameter for kinematic calculation of the robot manipulator 200. At this time, the control device 100 may generate correction parameters by reflecting the polar coordinate measurement point and the thickness of the wafer 300 in the DH parameter of the link corresponding to the end effect device of the robot manipulator 200.

In step S140, the control device 100 performs a kinematic calculation of the robot manipulator 200. The control device 100 may perform calculations on the forward kinematics and inverse kinematics of the robot manipulator 200 using the correction parameters. Through this, the control device 100 calculates the joint angle of the robot manipulator 200 to measure the measurement point 350, which is the analytical solution of the robot manipulator 200.

In step S150, the control device 100 controls the operation of the robot manipulator 200. The control device 100 adjusts the position and direction of the robot manipulator 200 according to the joint angle calculated from kinematic calculation. To this end, the control device 100 generates control signals for the position and direction of the robot manipulator 200. The control device 100 transmits the generated control signal to the robot manipulator 200 to control its operation.

Figure 10 is a block diagram for explaining a computing device according to an embodiment of the present invention.

Referring to FIG. 10, the computing device TN100 may be a device (eg, a control device, a user terminal, etc.) described herein.

The computing device TN100 may include at least one processor TN110, a transceiver device TN120, and a memory TN130. Additionally, the computing device TN100 may further include a storage device TN140, an input interface device TN150, an output interface device TN160, etc. Components included in the computing device TN100 may be connected by a bus TN170 and communicate with each other.

The processor TN110 may execute a program command stored in at least one of the memory TN130 and the storage device TN140. The processor TN110 may refer to a central processing unit (CPU), a graphics processing unit (GPU), or a dedicated processor on which methods according to embodiments of the present invention are performed. Processor TN110 may be configured to implement procedures, functions, and methods described in connection with embodiments of the present invention. The processor TN110 may control each component of the computing device TN100.

Each of the memory TN130 and the storage device TN140 can store various information related to the operation of the processor TN110. Each of the memory TN130 and the storage device TN140 may be comprised of at least one of a volatile storage medium and a non-volatile storage medium. For example, the memory TN130 may be comprised of at least one of read only memory (ROM) and random access memory (RAM).

The transceiving device TN120 can transmit or receive wired signals or wireless signals. The transmitting and receiving device (TN120) can be connected to a network and perform communication.

Meanwhile, the embodiments of the present invention are not only implemented through the apparatus and/or method described so far, but may also be implemented through a program that realizes the function corresponding to the configuration of the embodiment of the present invention or a recording medium on which the program is recorded. This implementation can be easily implemented by anyone skilled in the art from the description of the above-described embodiments.

Although the embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the present invention defined in the following claims are also possible. It falls within the scope of invention rights.

10: Department of Communications
30: input unit
50: control unit
51: Coordinate system conversion unit
52: Parameter correction unit
53: Kinematics calculation unit
54: drive control unit
70: storage unit
100: Control device
200: Robot manipulator
300: wafer
350: Measurement point
400: Ion scattering spectrometer
450: Ion beam
500: Chamber
600: User terminal
700: Control system

Claims (10)

When at least one measurement point is selected among wafers loaded on the robot manipulator, a coordinate system conversion unit converts the measurement point into a polar coordinate system;
a parameter correction unit that generates correction parameters by reflecting the measurement point converted to polar coordinates and the thickness of the wafer into DH (Denavit-Hartenberg) parameters; and
a kinematics calculation unit that performs a kinematics calculation of the robot manipulator using the correction parameters;
A control device containing a. According to clause 1,
a drive control unit that adjusts the position and direction of the robot manipulator according to the joint angle calculated from the kinematic calculation;
A control device further comprising: According to clause 1,
The coordinate system conversion unit,
A control device that sets a wafer coordinate system based on the last rotating joint of the robot manipulator, and converts the measurement point into the polar coordinate system when the measurement point is selected on the set wafer coordinate system. According to clause 1,
If the robot manipulator is a 5-degree-of-freedom robot,
The parameter correction unit,
A control device characterized in that it generates a correction parameter by reflecting the measurement point in the polar coordinate system and the thickness of the wafer in the DH parameter of the link corresponding to the end-effector of the robot manipulator. According to clause 4,
The kinematics calculation unit,
When performing calculations on the forward kinematics of the robot manipulator,
A control device characterized in that the correction parameter is applied to the following equation to calculate a transformation matrix representing the position and direction related to each joint.
[Equation]

(Here, T means the transformation matrix, i means the coordinate system, θ _i means the angle between x _i -1 and x _i based on z _i -1 at the joints of the robot manipulator, and α _i is In the joint of the robot manipulator, it means the angle between z _i -1 and z _i based on x _i , a _i means the shortest distance between joint i and joint i+1 in the joint of the robot manipulator, and d _i is refers to the distance between x _i -1 and x _i 'along z _i -1 at the joints of the robot manipulator) According to clause 5,
The kinematics calculation unit,
A control device characterized in that the transformation matrix corresponding to the measurement point is calculated by applying the calculated transformation matrix for each joint to the following equation.
[Equation]
According to clause 6,
The kinematics calculation unit,
A control device that calculates the position and direction of the measurement point with respect to a reference coordinate system based on the base frame of the robot manipulator using the calculated transformation matrix of the measurement point. According to clause 6,
The kinematics calculation unit,
When performing calculations on the inverse kinematics of the robot manipulator,
A control device that calculates a joint angle of the robot manipulator for measuring the measurement point using the calculated transformation matrix of each joint, the transformation matrix of the measurement point, and the geometric structure of the robot manipulator. According to clause 8,
The kinematics calculation unit,
A control device characterized in that it reflects the geometric structure based on a trigonometric function using the length of each link of the robot manipulator and the adjustable joint angle for each joint. When at least one measurement point is selected among the wafers loaded on the robot manipulator
A control device controlling the operation of the robot manipulator converts the measurement point into a polar coordinate system;
generating correction parameters by the control device reflecting the measurement point converted to polar coordinates and the thickness of the wafer into DH parameters; and
performing, by the control device, a kinematic calculation of the robot manipulator using the correction parameters;
A control method including.

Images