KR102661859B1 - Sputtering equipment including ion implantation shower head - Google Patents

Abstract

The present invention relates to sputtering equipment, and more specifically, for the thin film deposition process using a plurality of atoms, a thin film is deposited by introducing a plurality of atoms in an ionized state into the chamber using an ion implantation showerhead. It allows a thin film deposition process that matches the desired composition ratio to be performed, and can reduce the production of defective products by depositing a thin film with a uniform composition ratio. The simple structure provides equipment that is easy to install, maintain, and repair. It relates to sputtering equipment including an ion implantation showerhead.

Description

Sputtering equipment including ion implantation shower head}

The present invention relates to a sputtering equipment including an ion implantation showerhead. In the process of depositing a composite thin film using a plurality of atoms, the process can be performed while minimizing the production of defective products while the thin film has a uniform composition ratio for the plurality of atoms. It's about sputtering equipment.

Among the processes for depositing thin films on semiconductors and displays, there is Physical Vapor Deposition (PVD), which physically deposits thin films, and the sputtering process, which is one of the PVD processes, involves depositing a thin film on a target so that the atoms or molecules that make up the target stick out. This is a process method that forms a thin film on a substrate by bombarding it with ions and causing the atoms or molecules protruding from the target to attach to the surrounding substrate.

Generally, in the composite film sputtering process, an ion injection port is formed to inject reactive gas ions into the chamber, and this ion injection port is provided in the chamber in a linear or point shape.

A linear ion injection hole is usually formed to have a length in one direction inside the chamber. When ions are implanted, ions are sprayed linearly along the shape of the ion injection hole, and since the injection can be concentrated only on a certain portion, the substrate moves or rotates. It is appropriate to use when the function is available. In addition, the point-type ion injection hole is formed only in a certain area of the chamber, and is configured to spray ions as a whole from the formed ion injection hole, so it is appropriate to use when the distance between the substrate and the ion injection hole is long, and the distance between the substrate and the target is narrow. , there is a problem that it is difficult to use in a facing structure.

Using the PVD process, it can be deposited as a thin film composed of one or more composite materials, and the necessary ingredients are injected according to the composition ratio to adjust the composition ratio of the composite material. At this time, if non-ionized gas is injected, normal bonding of materials will not occur, and if the thin film is a composite thin film in which three or more atoms are mixed, atoms of different components will meet and normal bonding will not occur inside the device. This can occur, making thin film composition ratio control a very difficult problem. In addition, even if ions are injected, if normal spraying is not achieved due to the system structure, the uniformity of the overall composition ratio in the thin film, which has different electrical, physical and chemical properties due to different composition ratios at each location of the specimen, is lowered, increasing the probability of defective products and increasing productivity. There is a problem with this falling off.

Korean Patent No. 10-1419678 “Inorganic film deposition apparatus and method, and manufacturing method of organic light emitting display device using the same (2014.07.09.)”

The present invention was made to solve the above problems, and the object of the present invention is to provide a sputtering device for depositing a thin film with a composite material containing a plurality of atoms, and to deposit a plurality of atoms with a uniform composition ratio. , a showerhead made of a material containing ceramics is provided in the chamber to allow ions to flow into the chamber, allowing atoms to flow into the chamber while maintaining their ionized state, thereby enabling more uniform deposition of thin films with multiple composite materials. The aim is to provide a sputtering device including an ion implantation showerhead capable of producing a composite thin film having a certain composition ratio.

In the sputtering equipment of the present invention for depositing a composite thin film using a plurality of atoms, the sputtering equipment for depositing a composite thin film using a plurality of atoms includes: a chamber having a space therein; A first fixing part located on one side inside the chamber and fixing the target; a second fixing part for fixing the specimen located on the other side of the chamber; An ion gas inlet formed in a point or linear shape inside the chamber to supply a reaction gas; And it is disposed horizontally with the first fixing part between the first fixing part and the second fixing part inside the chamber, and is formed in a ring shape including an ion gas injection port on the inner circumferential surface to inject process gas into the chamber. An ion implantation showerhead comprising: a metal shield electrically connected to ground and surrounding the upper and lower portions of the ion implantation showerhead using metal capable of functioning as a Faraday shield; The material of the ion implantation showerhead is characterized in that it includes ceramic.

delete

Additionally, the shape of the ion implantation showerhead is characterized in that it corresponds to the shape of the target.

delete

In addition, the inner diameter of the ion implantation showerhead ring is characterized in that it is formed larger than the diameter of the target.
A sputtering equipment for depositing a composite thin film using a plurality of atoms, comprising: a chamber having a space therein; A first fixing part located on one side inside the chamber and fixing the target; a second fixing part for fixing the specimen located on the other side of the chamber; An ion gas inlet formed in a point or linear shape inside the chamber to supply a reaction gas; And it is disposed horizontally with the first fixing part between the first fixing part and the second fixing part inside the chamber, and is formed in a ring shape including an ion gas injection port on the inner circumferential surface to inject process gas into the chamber. An ion implantation showerhead comprising: a metal shield electrically connected to ground and surrounding the upper and lower portions of the ion implantation showerhead using metal capable of functioning as a Faraday shield; It is located between the first fixing part and the second fixing part, and is located on one side relative to the midpoint between the first fixing part and the second fixing part, and the ion gas injection port of the ion injection showerhead is The spray direction is characterized in that it is formed in a direction toward the intermediate point.
A sputtering equipment for depositing a composite thin film using a plurality of atoms, comprising: a chamber having a space therein; A first fixing part located on one side inside the chamber and fixing the target; a second fixing part for fixing the specimen located on the other side of the chamber; An ion gas inlet formed in a point or linear shape inside the chamber to supply a reaction gas; And it is disposed horizontally with the first fixing part between the first fixing part and the second fixing part inside the chamber, and is formed in a ring shape including an ion gas injection port on the inner circumferential surface to inject process gas into the chamber. An ion implantation showerhead comprising: a metal shield electrically connected to ground and surrounding the upper and lower portions of the ion implantation showerhead using metal capable of functioning as a Faraday shield; The chamber includes a plurality of ion implantation showerheads, wherein the plurality of ion implantation showerheads are arranged horizontally to each other, and the first ion implantation showerhead, which is one of the plurality of ion implantation showerheads, is the first ion implantation showerhead. The second ion injection showerhead, which is located on one side of the midpoint between the government and the second fixing part, and is another one of the plurality of ion implantation showerheads, is connected to the first fixing part and the second fixing part. are located on different sides based on the midpoint between the first ion implantation showerhead and the second ion implantation showerhead, and the first ion implantation showerhead and the second ion implantation showerhead are spaced apart from the midpoint at the same distance, and the first ion implantation showerhead and the second ion implantation showerhead The ion gas injection port of each injection showerhead is characterized in that the injection direction is directed toward the intermediate point.

delete

delete

delete

delete

The sputtering device including the ion implantation showerhead of the present invention according to the above configuration is formed of a material containing ceramic and uses an ion implantation showerhead positioned between the target and the specimen to transfer ions to be deposited into a gas in the chamber. By spraying, a plurality of ions can be maintained in an ionized state and flow into the chamber, which has the advantage of easily forming a thin film of the mixture according to the composition ratio to be mixed. By providing a plurality of ion injection showerheads, a plurality of ions can be introduced into the chamber while maintaining the ionization state. Even in the case of mixed ions, a thin film with a uniform composition ratio can be manufactured, which has the effect of minimizing the occurrence of defective products, lowering the production cost, and manufacturing a composite ion thin film. In addition, the structure is simple, so the device can be manufactured to the minimum size, making it easy to manufacture and install. Depending on the structure, the device can be mounted by simply adding an ion implantation showerhead to a conventional device. It is also removable, so it can be replaced and installed. It is easy to clean and can reduce maintenance and repair costs.

Figure 1 is a cross-sectional view of sputtering equipment including an ion implantation showerhead.
Figure 2 is a perspective view of an embodiment of the ion implantation showerhead of the present invention.
Figure 3 is a perspective view of another embodiment of the ion implantation showerhead of the present invention.
Figure 4 is a cross-sectional view of an embodiment of sputtering equipment according to the position of the ion implantation showerhead.
Figure 5 is a cross-sectional view of another embodiment of sputtering equipment according to the position of the ion implantation showerhead.
Figure 6 is a cross-sectional view of sputtering equipment equipped with a plurality of ion implantation showerheads.

Hereinafter, the technical idea of the present invention will be described in more detail using the attached drawings. Prior to this, the terms or words used in this specification and claims should not be construed as limited to their usual or dictionary meanings, and the inventor should appropriately define the concept of terms in order to explain his or her invention in the best way. It must be interpreted as meaning and concept consistent with the technical idea of the present invention based on the principle of definability.

Accordingly, the embodiments described in this specification and the configurations shown in the drawings are only one of the most preferred embodiments of the present invention and do not represent the entire technical idea of the present invention, so at the time of filing this application, various alternatives are available to replace them. It should be understood that variations may exist.

Hereinafter, the technical idea of the present invention will be described in more detail using the attached drawings. The attached drawings are only an example to explain the technical idea of the present invention in more detail, so the technical idea of the present invention is not limited to the form of the attached drawings.

When described with reference to FIG. 1, the sputtering equipment 1000 including the ion implantation showerhead 400 of the present invention is a sputtering equipment 1000 that deposits a thin film with a composite of two or more ions, and has an internal A chamber 100 having a space, a first fixing part 200 located on one side of the chamber 100 to fix the target 210, and a first fixing part 200 located on the other side of the chamber 100 to fix the specimen 310. A second fixing part 300, an ion gas inlet 110 formed in a point or linear shape inside the chamber 100 to supply a reaction gas; And, an ion gas disposed horizontally with the target 210 inside the chamber 100 and formed in a ring shape including an ion gas injection port 410 on the inner circumferential surface to inject process gas into the chamber 100. It is characterized by including a shower head (400).

The chamber 100 of the present invention can be formed as long as it has an appropriate size to accommodate the target 210 and the substrate in the space formed inside the chamber 100 and to perform a sputtering process. The shape of the chamber 100 can be formed without limitation. The chamber 100 is preferably formed to have a closed space, and may have a structure in which the inside of the chamber 100 can be close to or in a vacuum state before performing the sputtering process.

When described with reference to FIG. 1, the chamber 100 of the present invention includes the first fixing part 200 and the second fixing part 300 therein, and the first fixing part 200 is the chamber. It is located on one side inside the chamber 100, and the second fixing part 300 is located on the other side inside the chamber 100. The first fixing part 200 and the second fixing part 300 are preferably arranged to face each other inside the chamber 100. The first fixing part 200 is for fixing the target 210, and the target 210 is attached to the other end of the first fixing part 200. It can be fixed, and the second fixing part 300 is for fixing the specimen 310, and the specimen 310 is attached to one end of the second fixing part 300. It can be fixed to the government 300. At this time, the first fixing part 200 and the second fixing part 300 may be arranged in a vertical direction or facing each other in a left and right direction inside the chamber 100. The second fixing part 300 may be formed to be rotatable in an upward and downward direction. The first fixing part 200 and the second fixing part 300 may be formed so that cathode and anode voltages are applied from the outside, respectively, so that the first fixing part 200 and the second fixing part 300 It is converted into plasma by the electric field generated between the two and a thin film deposition process can be performed.

The ionized ion gas inlet 110 is provided to supply the reaction gas inside the chamber 100, and the ionized ion gas inlet 110 may be formed in a point shape or linear shape. At this time, the reaction gas may be an inert gas containing argon (Ar), etc., and may be obtained by ionizing any one of the thin film composite materials to be deposited on the specimen 310 and mixing it with argon (Ar). Glow discharge is induced by the reaction between the reaction gas and the target 210, which is generated by supplying the reaction gas into the chamber 100 through the ionized ion gas inlet 110, and forming a thin film on the specimen 310. Deposition can be performed.

Figure 1 shows an embodiment of a point-type ionized ion gas inlet 110. The point-type ionized ion gas inlet 110 is a configuration frequently used in general sputtering devices. The ionized ion gas inlet 110 is formed with a predetermined area on one of the plurality of walls of the chamber 100, and the ionized ion gas inlet 110 allows the ionized ion gas inlet 110 to enter one of the plurality of walls of the chamber 100. It is characterized in that the reaction gas is sprayed into the chamber 100 from the part. The linear ionized ion gas inlet 110 is formed with a length in one direction and is provided inside the chamber 100, and a plurality of holes are formed along the longitudinal direction of the ionized ion gas inlet 110. It is characterized in that the reaction gas is sprayed into the chamber 100 in the longitudinal direction of the ionized ion gas inlet 110.

2 and 3, the present invention is characterized in that it includes the ion implantation showerhead 400 for spraying the process gas into the chamber 100, and the ion implantation showerhead ( 400 may be formed in a ring shape with a perforated inner circumferential surface and may include the ion gas injection port 410 for spraying the process gas on the inner circumferential surface, and the ion implantation showerhead 400 may be formed with the first fixing part ( It may be arranged horizontally with at least one of the 200) and the second fixing part 300.

At this time, the process gas is an ionized product of at least one component among a plurality of components to be used in the thin film deposition process of a composite material, and may be composed of components different from the reaction gas, and is applied to the specimen 310. A plurality of components to be deposited can be selected as needed and used as the process gas. The ion implantation showerhead 400 can be installed in any position where the process gas can be supplied to the inside of the chamber 100, and is formed to be detachable so that it can be attached or detached inside the chamber 100 as needed. Can be configured to use

The present invention is intended to form a composite thin film by mixing a plurality of atoms. In this case, the ion implantation showerhead 400 includes ceramic so that each atom has a designed composition ratio and can be deposited on the thin film at a uniform composition ratio. It is characterized by being formed from a material. A plurality of atoms must be ionized for thin film deposition and introduced into the chamber 100 as the process gas. Ceramic is characterized as a material close to electrically neutral, and is used in the ion implantation showerhead 400 made of ceramic. Since the process gas can maintain ionization and move until it is introduced into the chamber 100, it is possible to easily deposit a thin film with a desired composite thin film ratio and uniform composition ratio on the sample. At this time, the ion implantation showerhead 400 can be made of any electrically neutral material that can maintain and move the ionized components of the process gas without limitation, excluding ceramics.

The ion implantation showerhead 400 is formed in a ring shape, and includes the first fixing part 200 and the second fixing part ( 300) can be formed to correspond to any one of the shapes. In the present invention, in order to more actively induce a reaction between the target 210 and the process gas, the shape of the ion implantation showerhead 400 may be formed to correspond to the shape of the target 210. When explaining an embodiment with reference to FIG. 2, when the target 210 and the specimen 310 of the present invention are formed in a circular shape, the ion implantation showerhead 400 will be formed in the shape of a circular ring. You can. In addition, when another embodiment is described with reference to FIG. 3, when the target 210 and the specimen 310 of the present invention are formed in a square shape, the ion implantation showerhead 400 is formed in the shape of a square ring. can be formed. When the target 210 and the specimen 310 are formed in different shapes, either shape can be selected and applied as the shape of the ion implantation showerhead 400, and the target 210 When formed to correspond to the shape of, it is easy to react the gas by spraying the process gas evenly over the entire surface of the target 210, so there is an advantage that thin film deposition can be performed more efficiently.

The ion implantation showerhead 400 is arranged horizontally with at least one of the first fixing part 200 and the second fixing part 300 in order to more uniformly spray the process gas into the chamber 100. It is desirable to be In addition, since the process gas is sprayed on the target 210 and the specimen 310 through the ion gas injection hole 410 formed on the inner peripheral surface, the diameter of the inner peripheral surface of the ion implantation showerhead 400 is equal to the target 210. and is preferably formed larger than the diameter of the specimen 310. At this time, when the ion gas injection hole 410 is inclined toward one of the first fixing part 200 and the second fixing part 300, the diameter of the inner peripheral surface of the ion implantation showerhead 400 is as described above. The ion gas injection port 410 may be formed according to the diameter of the target 210 or the specimen 310 located on the facing side, or the ion implantation showerhead 400 may be connected to the first fixing part 200. And it may be configured to be formed according to the diameters of the target 210 and the specimen 310 mounted on the horizontally arranged fixing part of the second fixing part 300.

1 to 3, the ion implantation showerhead 400 may be formed to further include a metal shield 420 surrounding the outer surface of the ion implantation showerhead 400, and the metal shield (420) is preferably formed to be electrically connected to the ground. The metal shield 420 is intended to prevent electrical effects that may occur on the process gas injected into the chamber 100 due to the formation of an electric field according to the cathode and anode potentials, and is made of metal that can function as a Faraday shield. It can be formed into a structure that surrounds the upper and lower parts of the ion implantation showerhead 400. Accordingly, the influence of the electric field generated when the process gas flows into the chamber 100 can be offset. Accordingly, the process gas ionized and moved into the chamber 100 through the ion implantation showerhead 400 causes particles to protrude from the target 210 due to plasmaization generated within the chamber 100. It has the effect of preventing it from sticking to the ion implantation showerhead 400 and inhibiting thin film deposition.

The ion implantation showerhead 400 can be placed in any position where the process gas can be sprayed within the chamber 100, between the first fixing part 200 and the second fixing part 300. It may be located on the outside of the first fixing part 200 and the second fixing part 300, or on the top or bottom of the chamber 100. The ion implantation showerhead 400 of the present invention may be positioned between the first fixing part 200 and the second fixing part 300 in order to more uniformly spray the process gas, and thus the The ion process gas can be sprayed between the first fixing part 200 and the second fixing part 300 through the ion gas injection port 410. At this time, the direction of the ion gas injection port 410 of the ion injection showerhead 400 can be adjusted according to the distance between the first fixing part 200 and the second fixing part 300, and in more detail, the ion The direction of the gas injection hole 410 may be formed at an angle within 0 to ±45° relative to the horizontal.

In more detail, in order to uniformly spray the process gas into the chamber 100, the ion implantation showerhead 400 is located between the first fixing part 200 and the second fixing part 300, The ion implantation showerhead 400 may be located at one of the midpoint, upper and lower sides with respect to the midpoint between the first fixing part 200 and the second fixing part 300. In this case, The injection direction of the ion gas injection hole 410 may be determined depending on the position of the ion implantation showerhead 400 disposed with respect to the midpoint. For example, when the ion implantation showerhead 400 is disposed at the midpoint between the first fixing part 200 and the second fixing part 300, the ion gas injection port 410 is located at the midpoint. It may be formed to be inclined to face a direction, that is, a horizontal direction, and may be configured to spray the process gas horizontally. Figure 4 Referring to another embodiment, the ion implantation showerhead 400 is positioned at the first fixing part 200 based on the midpoint between the first fixing part 200 and the second fixing part 300. ), the ion gas injection port 410 of the ion implantation showerhead 400 may be formed in a direction toward the intermediate point, that is, toward the second fixing part 300. To describe another embodiment with reference to FIG. 5, the ion implantation showerhead 400 is positioned at the second fixing point based on the midpoint between the first fixing part 200 and the second fixing part 300. When disposed on the side of the fixing part 300, the ion gas injection port 410 of the ion implantation showerhead 400 may be formed in a direction toward the intermediate point, that is, toward the first fixing part 200. there is.

In addition, the chamber 100 of the present invention may be provided with a plurality of ion implantation showerheads 400, including a first ion implantation showerhead 400a and a second ion implantation showerhead 400b, The plurality of ion implantation showerheads 400a and 400b may be arranged horizontally to each other within the chamber 100. The present invention is for depositing a thin film with a more uniform composition ratio in a sputtering device for depositing a composite thin film using a plurality of atoms, and the chamber 100 includes a plurality of the ion implantation showerheads 400a and 400b. It may be configured to spray different atoms into the chamber 100 through each of the ion implantation showerheads 400a and 400b. Accordingly, atoms having different properties can be moved into the chamber 100 independently of each other, and each component is maintained with the process gas and sprayed inside the chamber 100, thereby having the composition ratio to be manufactured. It has the effect of smoothly depositing a composite thin film. At this time, the plurality of ion implantation showerheads 400a and 400b may be arranged horizontally between the first fixing part 200 and the second fixing part 300. In addition, when the first ion implantation showerhead 400a, which is one of the plurality of ion implantation showerheads 400a and 400b, is located on one side based on the midpoint, the plurality of ion implantation showerheads 400a and 400b The second ion implantation showerhead 400b, which is one of (400a, 400b), may be located on the other side based on the midpoint, and in this case, the first ion implantation showerhead 400a and the second ion implantation showerhead 400a The ion implantation showerhead 400b is preferably spaced at the same distance from the midpoint, and each ion gas injection port 410 may be formed to be inclined in a direction toward the midpoint.

When described in detail with reference to FIG. 6 and an embodiment of the present invention, the present invention can deposit a composite thin film composed of three atoms including a first atom, a second atom, and a component of the target 210, The chamber 100 may have a first ion implantation showerhead 400a and a second ion implantation showerhead 400b, and the first ion implantation showerhead 400a converts the first atoms into the process gas. It is configured to supply the second ion implantation showerhead 400b into the chamber 100 as the process gas. At this time, when the first ion implantation showerhead 400a is located on the first fixing part 200 based on the midpoint, the second ion implantation showerhead 400b is positioned on the second fixing part 300. Located on the side, the first ion implantation showerhead 400a and the second ion implantation showerhead 400b may be arranged to be spaced apart from each other at the same distance from the midpoint. Accordingly, the ion gas injection port 410a of the first ion implantation showerhead 400a is formed in a direction toward the intermediate point, that is, toward the second fixing part 300, and the second ion injection The ion gas injection port 410b of the showerhead 400b may be formed to face the intermediate point, that is, the direction of the first fixing part 200.

To explain the general complex atom of the present invention as an example, conventionally, when trying to deposit a titanium carbonitride (TiCN) thin film, which is a composite material containing carbon (C) and nitrogen (N), the main target is titanium. It may be (Ti), and the process gas argon (Ar), nitrogen gas (N2) gas, and methane gas (CH4) are simultaneously injected through a separate target gas inlet, and then a sputtering plant is performed to deposit a TiCN thin film, or Install a titanium (Ti; target 1) target and a carbon (C: Graphite; target 2) target, inject the process gas argon (Ar) and nitrogen gas (N2) through the gas inlet, and then perform the sputtering process at the same time. Deposition can be carried out using a co-sputtering method to deposit a TiCN thin film. However, when supplying each ion through the gas inlet, in the case of a material (for example, metal) that can supply free electrons due to the electrical characteristics of the ion, if it is present in the moving pipe, it will be in an ionized state due to the combination of free electrons. Because it can be destroyed, the pipe must be made of a non-conductive material such as ceramic. Due to the electric field between the electrodes (upper cathode and lower anode), a protective film (shield) is made of metal on the outside of the pipe to reduce the effect of the electric field when the pipe spreads. It needs to be processed. As a result, the survival rate of the ion gas is increased and normal film formation is possible when sprayed inside the chamber, but a problem arises in that when the ionization property disappears, there is a difference in the composition ratio combined within the chamber. Accordingly, since the bonding reaction between atoms is not smooth, there is a problem that the probability of occurrence of defective products due to mismatch in the thin film composition ratio is high.

The present invention is intended to solve the above-described problems, and includes the ion implantation showerhead 400. To describe an example, titanium carbonitride (TiCN) is produced using the sputtering equipment 1000 of the present invention. ), if you want to deposit a thin film, The target 210 may be Ti, and nitrogen gas is ionized with the reaction gas through the ion ion gas inlet 110 and introduced into the chamber 100 to produce titanium ( It can be reacted with Ti). Additionally, in order to allow carbon to be deposited on the specimen 310 while maintaining a uniform composition ratio, the present invention ionizes carbon and injects it into the chamber 100 through the ion implantation showerhead 400 with the process gas. It is characterized by supply. Since the ion implantation showerhead 400 is made of a material containing insulating ceramic, the nitrogen or carbon, which is the process gas, remains in an ion state until it is sprayed into the chamber 100. It can flow in, and this has the effect of forming a thin film more uniformly on the specimen 310 at the desired composition ratio. In addition, the present invention may be provided with a plurality of the ion implantation showerheads 400, where nitrogen ions are supplied as the reaction gas into the chamber 100 through the ion gas injection port 110, and a plurality of atoms are supplied to the chamber 100. Another ion implantation showerhead 400 can be configured to supply the process gas into the chamber 100, and nitrogen and carbon are supplied to the chamber 100 through the ion implantation showerhead 400, which are independent of each other. 100), it maintains its components and is supplied into the chamber 100 to react, so that it can have the composition ratio to be manufactured and also has the effect of depositing a composite thin film having a more uniform composition ratio throughout the thin film.

As described above, the present invention has been described with reference to specific details such as specific components and limited embodiment drawings, but this is only provided to facilitate a more general understanding of the present invention, and the present invention is not limited to the above-mentioned embodiment. No, those skilled in the art can make various modifications and variations from this description.

Accordingly, the spirit of the present invention should not be limited to the described embodiments, and all matters that are equivalent or equivalent to the claims of this patent as well as the claims described below shall fall within the scope of the spirit of the present invention. .

1000: Sputtering equipment
100: Chamber 110: Ion gas inlet
200: first fixing part 210: target
300: second fixing part 310: specimen
400: Ion injection shower head 410: Ion gas nozzle
420: Metal shield

Claims (9)

In sputtering equipment for depositing a composite thin film using a plurality of atoms,
a chamber having a space therein;
A first fixing part located on one side inside the chamber and fixing the target;
a second fixing part for fixing the specimen located on the other side of the chamber;
An ion gas inlet formed in a point or linear shape inside the chamber to supply a reaction gas; and
It is disposed horizontally with the first fixing part between the first fixing part and the second fixing part inside the chamber, and is formed in a ring shape including an ion gas injection port on the inner circumferential surface to inject process gas into the chamber. Including an ion implanted shower head;
The ion injection showerhead,
It includes a metal shield that is electrically connected to the ground and surrounds the upper and lower parts of the ion implantation showerhead using metal capable of functioning as a Faraday shield,
Sputtering equipment including a showerhead, wherein the material of the ion implantation showerhead includes ceramic.
delete According to clause 1,
The form of the ion implantation showerhead is,
Sputtering equipment including an ion implantation showerhead characterized in that it corresponds to the shape of the target.
delete According to clause 1,
The inner diameter of the ion implantation showerhead is
Sputtering equipment including an ion implantation showerhead, characterized in that it is formed to be larger than the diameter size of the target.
delete In sputtering equipment for depositing a composite thin film using a plurality of atoms,
a chamber having a space therein;
A first fixing part located on one side inside the chamber and fixing the target;
a second fixing part for fixing the specimen located on the other side of the chamber;
An ion gas inlet formed in a point or linear shape inside the chamber to supply a reaction gas; and
It is disposed horizontally with the first fixing part between the first fixing part and the second fixing part inside the chamber, and is formed in a ring shape including an ion gas injection port on the inner circumferential surface to inject process gas into the chamber. Including an ion implanted shower head;
The ion injection showerhead,
It includes a metal shield that is electrically connected to the ground and surrounds the upper and lower parts of the ion implantation showerhead using metal capable of functioning as a Faraday shield,
It is located between the first fixing part and the second fixing part, and is located on one side relative to the midpoint between the first fixing part and the second fixing part,
Sputtering equipment including an ion implantation showerhead, wherein the ion gas injection port of the ion implantation showerhead is formed in a direction toward the intermediate point.
delete In sputtering equipment for depositing a composite thin film using a plurality of atoms,
a chamber having a space therein;
A first fixing part located on one side inside the chamber and fixing the target;
a second fixing part for fixing the specimen located on the other side of the chamber;
An ion gas inlet formed in a point or linear shape inside the chamber to supply a reaction gas; and
It is disposed horizontally with the first fixing part between the first fixing part and the second fixing part inside the chamber, and is formed in a ring shape including an ion gas injection port on the inner circumferential surface to inject process gas into the chamber. Including an ion implanted shower head;
The ion injection showerhead,
It includes a metal shield that is electrically connected to the ground and surrounds the upper and lower parts of the ion implantation showerhead using metal capable of functioning as a Faraday shield,
The chamber includes a plurality of ion implantation showerheads, and the plurality of ion implantation showerheads are arranged horizontally to each other,
A first ion implantation showerhead, which is one of the plurality of ion implantation showerheads, is located on one side with respect to the midpoint between the first fixing part and the second fixing part,
A second ion implantation showerhead, which is another one of the plurality of ion implantation showerheads, is located on the other side with respect to the midpoint between the first fixing part and the second fixing part,
The first ion implantation showerhead and the second ion implantation showerhead are spaced apart at the same distance from the midpoint,
Sputtering equipment including an ion implantation showerhead, wherein the ion gas injection ports of each of the first ion implantation showerhead and the second ion implantation showerhead are formed with a spray direction toward the intermediate point.

Images