KR102633410B1 - Flexible display device and method for manufacturing thereof - Google Patents

Abstract

A flexible display device and a method of manufacturing the same are provided that can prevent patterns formed on a substrate from being damaged by foreign substances such as particles when a chamber cleaning process is performed during the display device manufacturing process. In a flexible display device, a first protective film and a second protective film are double deposited on one side of a flexible substrate, and the uppermost second protective film can prevent the lower first protective film and driving circuit from being damaged by foreign substances. .

Description

Flexible display device and method for manufacturing the same}

The present invention relates to a flexible display device, and more particularly to a flexible display device that can prevent damage to patterns formed on a flexible substrate during a chamber cleaning process of a plasma processing device and a method of manufacturing the same.

Due to recent advances in digital technology, the development of next-generation display devices is actively underway, focusing on research on improving the functionality of currently commercialized flat panel displays, such as touch panels and OLEDs. Among these, a flexible display device is a display device that can be bent or folded without losing the characteristics of the display device, and is applied not only to replace existing flat panel displays but also to next-generation display devices such as electronic paper.

Flexible display devices are manufactured by depositing thin films on a flexible substrate, such as a film, instead of a glass substrate that is not durable and flexible. The flexible substrate is continuously provided to a plasma processing device, for example, a plasma deposition chamber, in a roll-to-roll manner, and thin films are formed through plasma deposition inside the plasma processing device.

Meanwhile, a typical plasma processing device performs a periodic chamber cleaning process to ensure good quality of the thin film deposited on the substrate. This chamber cleaning process removes particles remaining inside the chamber, thereby improving the quality of the thin film formed on the substrate in the subsequent deposition process.

However, in a plasma deposition processing apparatus that performs a deposition process by providing a flexible substrate in a roll-to-roll manner, defects occur in the thin film deposited by the above-described chamber cleaning process.

To explain further, in the roll-to-roll method, the flexible substrate is continuously supplied into the chamber of the plasma processing device, so a thin film is continuously deposited on one side of the flexible substrate. At this time, when the chamber cleaning process is performed in the plasma processing device, the particles remaining inside the chamber fall onto the flexible substrate. As a result, damage due to particles occurs in the thin film formed on the flexible substrate, which causes defects in the flexible display device.

The present invention provides a flexible display device and a manufacturing method thereof that can prevent damage to patterns formed on a flexible substrate during a chamber cleaning process of a plasma processing device.

The flexible display device of the present invention for achieving the above object includes a driving transistor disposed on a substrate, a first protective film and a second protective film formed double on the upper part of the driving transistor, and disposed on the second protective film and connected to the driving transistor. It includes organic light emitting devices.

The method of manufacturing a flexible display device of the present invention for achieving the above object is to provide a flexible substrate composed of a plurality of panel areas and a dummy area to a chamber of a plasma processing device in a first direction, and to place a flexible substrate on one side of the flexible substrate inside the chamber. It includes depositing a first protective film.

Next, the method of manufacturing a flexible display device of the present invention includes providing a flexible substrate on which a first protective film is deposited to a chamber in a direction opposite to the first direction and depositing a second protective film on the first protective film.

The flexible display device according to the present invention has a double first protective film and a second protective film between the driving circuit formed on the flexible substrate and the organic light emitting element on the uppermost layer, so that the uppermost second protective film is used when manufacturing the flexible display device. When the chamber cleaning process is in progress, the first protective film and the driving transistor below it can be prevented from being damaged by foreign substances such as particles. Accordingly, the reliability of the flexible display device can be increased by preventing pattern defects from occurring due to foreign substances, etc. during the manufacturing process.

1 is a diagram showing a cross section of a flexible display device according to an embodiment of the present invention.
FIG. 2 is a diagram showing a schematic configuration of a roll-to-roll plasma processing device for manufacturing the flexible display device of FIG. 1.
FIGS. 3A and 3B are diagrams showing the operation of the plasma processing apparatus of FIG. 2.
Figure 4 is a manufacturing process flowchart of the flexible display device of the present invention.
5A to 5D are diagrams showing the manufacturing process of a flexible display device according to an embodiment of the present invention.
6A to 6B are diagrams showing a manufacturing process of a flexible display device according to another embodiment of the present invention.

Hereinafter, the flexible display device and its manufacturing method according to the present invention will be described in detail with reference to the attached drawings.

1 is a diagram showing a cross section of a flexible display device according to an embodiment of the present invention. Hereinafter, the flexible organic light emitting display device will be described as the flexible display device 100, but the present invention is not limited thereto.

Referring to FIG. 1, the flexible display device 100 of this embodiment may include a driving circuit formed on a flexible substrate 110 and an organic light emitting device (OLED) connected thereto.

The driving circuit may be composed of a plurality of switching elements, such as thin film transistors, formed on the flexible substrate 110. The driving circuit may include a switching transistor (not shown) and a driving transistor (TFT). For convenience of explanation, this embodiment will be described using a driving transistor (TFT) as an example.

The driving transistor (TFT) is connected to an organic light emitting device (OLED), which will be described later, and can operate the organic light emitting device (OLED). The driving transistor (TFT) may include a semiconductor layer 121, a gate electrode 122, a source electrode 123, and a drain electrode 124. The driving transistor (TFT) may be formed as a top gate type on the flexible substrate 110, but is not limited thereto.

A semiconductor layer 121 may be located on the flexible substrate 110. The semiconductor layer 121 may be formed by depositing a material such as silicon (Si) or an oxide semiconductor on the flexible substrate 110 and then selectively patterning the material. The semiconductor layer 121 may include a central channel region and source and drain regions on both sides of the channel region. The source and drain regions may be doped with high concentrations of impurities.

A buffer layer (not shown) may be located between the flexible substrate 110 and the semiconductor layer 121. The buffer layer can flatten the upper surface of the flexible substrate 110 and prevent impurities from penetrating from the outside.

A gate insulating film 131 may be located on the semiconductor layer 121, such as a silicon oxide film (SiO2) or a silicon nitride film (SiNx).

On the gate insulating film 131, a gate electrode 122 may be positioned to correspond to the channel region of the semiconductor layer 121, and a gate wiring (not shown) may be positioned to extend in one direction.

An interlayer insulating film 133 may be formed on the gate electrode 122. Contact holes (not shown) may be formed in the interlayer insulating film 133 and the gate insulating film 131 to expose portions of the source and drain regions of the semiconductor layer 121, respectively.

On the interlayer insulating film 133, a source electrode 123 connected to the source region of the semiconductor layer 121 through a contact hole and a drain electrode 124 connected to the drain region of the semiconductor layer 121 through a contact hole will be located. You can.

In this way, a driving transistor (TFT) including a semiconductor layer 121, a gate electrode 122, a source electrode 123, and a drain electrode 124 may be formed on the flexible substrate 110. At least one driving transistor (TFT) may be configured for each pixel area of the flexible substrate 110.

A passivation film, for example, a first protective film 135, may be positioned on the driving transistor (TFT). The first protective film 135 may be formed of an inorganic insulating film or an organic insulating film.

A second protective film 140 may be positioned on the first protective film 135. The second protective film 140 can protect the pattern under the second protective film 140, for example, the first protective film 135 and the driving transistor (TFT), from foreign substances such as particles.

For example, the first protective film 135 may be formed through a plasma deposition process. Accordingly, the flexible substrate 110 on which the driving transistor (TFT) is formed is continuously provided to the plasma processing device in a roll-to-roll manner. Also, the first protective film 135 may be deposited to a predetermined thickness on the top of the driving transistor (TFT) according to a predetermined reaction gas inside the chamber of the plasma processing device.

Here, the plasma processing device performs periodic chamber cleaning to remove internal particles. However, as described, the flexible substrate 110 of this embodiment is continuously provided to the chamber in a roll-to-roll manner. Accordingly, when the cleaning process of the chamber is performed while the flexible substrate 110 is located in the chamber of the plasma processing apparatus, particles attached to the chamber walls, etc. fall onto the flexible substrate 110. As a result, damage occurs due to particles in the first protective film 135 formed on the flexible substrate 110 or the pattern below it, that is, the driving transistor (TFT). Accordingly, the flexible display device 100 of the present embodiment additionally configures the second protective film 140 on the first protective film 135, thereby causing particles to form on the lower part of the second protective film 140 during the chamber cleaning process of the plasma processing device. The patterns, for example, the first protective film 135 and the driving transistor (TFT), can be prevented from being damaged.

This second protective film 140 is made of metal oxide such as aluminum oxide (AlxOy), silicon oxide (SiOx), titanium oxide (TiOx), tantalum oxide (TaxOy), or silicon nitride (SiNx), aluminum nitride (AlNx), titanium nitride ( It can be formed from a metal nitrogen compound such as TiNx).

Additionally, the second protective film 140 may be deposited to a thickness of 100 to 500 Å. The second protective film 140 may be formed by depositing the first protective film 135 on the flexible substrate 110 and then providing the flexible substrate 110 to the plasma processing apparatus in the reverse direction. The manufacturing process of the flexible display device 100 including the second protective film 140 will be described in detail later with reference to the drawings.

A contact hole (not shown) may be formed in the first protective film 135 and the second protective film 140 to expose a portion of the drain electrode 124 of the driving transistor (TFT).

A light-emitting device, such as an organic light-emitting device (OLED), connected to the driving transistor (TFT) may be located on the second protective film 140. The organic light emitting device (OLED) may be located in the pixel area defined by the bank 157 formed on the second protective film 140, that is, the light emitting area.

An organic light emitting device (OLED) may include a first electrode 151, a light emitting layer 153, and a second electrode 155. Organic light emitting devices (OLEDs) may have different electrode configurations depending on the light emission method. For example, when the flexible display device 100 is a top emission type, the first electrode 151 of the organic light emitting device (OLED) is formed as a reflective electrode, and the second electrode 155 is a transflective electrode. can be formed. However, when the flexible display device 100 is a bottom emission type, the first electrode 151 of the organic light emitting device (OLED) may be formed as a transflective or transmissive electrode, and the second electrode 155 ) can be formed as a reflective electrode.

The first electrode 151 of the organic light emitting device (OLED) may be located on the second protective film 140. The first electrode 151 may be formed in an island shape in each pixel area of the flexible display device 100. The first electrode 151 may be connected to the drain electrode 124 of the driving transistor (TFT) through a contact hole formed in the second protective film 140 and the first protective film 135. Since the first electrode 151 forms the anode of an organic light emitting device (OLED), it can be formed of a material with a relatively high work function value, such as indium tin oxide (ITO) or indium zinc oxide (IZO). there is.

A bank 157 may be formed on the first electrode 151 to have a predetermined thickness. The bank 157 may be formed of one or more organic insulating materials selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenol resin by a method such as spin coating. The bank 157 may be formed to cover the side end of the first electrode 151 to define a light emitting area.

The light emitting layer 153 may be formed on the entire surface of the substrate including the bank 157 and overlap the first electrode 151 in the light emitting area. The light emitting layer 153 includes a hole transport layer (HTL), a hole injection layer (HIL), an emission material layer (EML), an electron transport layer (ETL), and an electron injection layer. A film (electron injection layer: EIL) may be formed by stacking.

The second electrode 155 is formed on the entire surface of the substrate including the light-emitting layer 153 and may face the first electrode 151. Since the second electrode 155 forms a cathode of an organic light emitting device (OLED), it is made of a material with a relatively low work function value, such as lithium (Li), magnesium (Mg), silver (Ag), or a magnesium/silver alloy ( Mg:Ag).

As described above, the flexible display device 100 of this embodiment includes a first protective film 135 and a second protective film 140 between the driving transistor (TFT) and the organic light emitting device (OLED) formed on the flexible substrate 110. can be configured twice. In addition, the second protective film 140 prevents the first protective film 135 and the driving transistor (TFT) below it from being damaged by foreign substances such as particles during the chamber cleaning process during the manufacturing process of the flexible display device 100. can do. Accordingly, the flexible display device 100 of this embodiment can prevent defects from occurring by preventing patterns from being damaged by foreign substances, etc. during the manufacturing process.

FIG. 2 is a diagram showing a schematic configuration of a roll-to-roll plasma processing device for manufacturing the flexible display device of FIG. 1.

Referring to FIG. 2, the plasma processing apparatus 200 may include a drum 210 and a showerhead 220 provided inside the chamber 201.

The plasma processing device 200 performs a plasma deposition process on the flexible substrate 110 continuously provided from the outside to deposit a predetermined thin film, and continuously exports the flexible substrate 110 on which the thin film is deposited to the outside. . Accordingly, the plasma processing apparatus 200 may include a pair of rollers adjacent to the chamber 201 to provide and retrieve the flexible substrate 110, for example, a first roller 310 and a second roller 320. . This plasma processing device 200 may be a plasma enhanced chemical vapor deposition (PECVD) device. Here, the chamber 201 may have a vacuum environment inside for the plasma deposition process.

The drum 210 of the plasma processing apparatus 200 may be configured in a cylindrical shape. The drum 210 may rotate the flexible substrate 110 provided from the first roller 310 outside the chamber 201 in a first direction along the outer circumferential surface and provide the flexible substrate 110 to the second roller 320 outside the chamber 201. there is. In addition, the drum 210 rotates the flexible substrate 110 provided from the second roller 320 outside the chamber 201 in the second direction along the outer circumferential surface and provides the flexible substrate 110 to the first roller 310 outside the chamber 201. can do.

That is, the drum 210 can transport the flexible substrate 110 while rotating in the first direction and the second direction, respectively, inside the chamber 201. Here, the first direction may be a forward direction, for example, clockwise, and the second direction may be a reverse direction, for example, counterclockwise.

The showerhead 220 of the plasma processing apparatus 200 may be disposed adjacent to a portion of the outer peripheral surface of the drum 210. The showerhead 220 can spray the reaction gas provided from the gas supply unit 230 at the same time as a predetermined voltage is applied from the external RF voltage source 240. Accordingly, the plasma area PA may be formed between the outer peripheral surface of the drum 210 and the front surface of the showerhead 220. Additionally, a thin film having a predetermined thickness may be deposited on the flexible substrate 110 moving along the outer peripheral surface of the drum 210 in a portion corresponding to the plasma area PA.

Additionally, the showerhead 220 may spray cleaning gas provided from the gas supply unit 230. Accordingly, particles remaining inside the chamber 201 may be cleaned by the cleaning gas and discharged to the outside of the chamber 201.

The front portion of the showerhead 220, that is, the front portion where the reaction gas or cleaning gas is sprayed, may be configured to correspond to the outer peripheral surface of the drum 210. Accordingly, the front portion of the showerhead 220 may be configured as a concave shape with a curvature equal to the curvature of the outer peripheral surface of the drum 210.

Meanwhile, a protection guide 205 may be disposed to protect the flexible substrate 110 located in an area excluding the plasma area PA between the drum 210 and the showerhead 220. A pair of protection guides 205 may be arranged adjacent to the outer peripheral surface of the drum 210. The protection guide 205 can prevent the reaction gas sprayed from the showerhead 220 from affecting the flexible substrate 110 in areas other than the plasma area.

Outside the chamber 201, a first roller 310 and a second roller 320 are disposed to provide the flexible substrate 110 into the chamber 201 or to retrieve the flexible substrate 110 from the chamber 201. It can be. The first roller 310 and the second roller 320 may be rotated in the same direction as the drum 210 inside the chamber 201 described above.

The first roller 310 and the second roller 320 rotate in a first direction, for example, in the forward direction, to provide the flexible substrate 110 inside the chamber 201, and to provide the flexible substrate 110 to the outside of the chamber 201. It can be recovered. At this time, the first roller 310 operates as an unwinding roller to provide the flexible substrate 110 into the chamber 201, and the second roller 320 operates as an unwinding roller to provide the flexible substrate 110 from the chamber 201. It can be operated as a rewinding roller to recover.

In addition, the first roller 310 and the second roller 320 rotate in the second direction, for example, in the reverse direction, to provide the flexible substrate 110 into the chamber 201, and to provide the flexible substrate 110 to the outside of the chamber 201. ) can be recovered. At this time, the first roller 310 operates as a rewinding roller to recover the flexible substrate 110 from the chamber 201, and the second roller 320 provides the flexible substrate 110 into the chamber 201. It can be operated as an unwinding roller.

FIGS. 3A and 3B are diagrams showing the operation of the plasma processing apparatus of FIG. 2.

First, referring to FIGS. 2 and 3A, the first roller 310, drum 210, and second roller 320 of the plasma processing apparatus 200 may all rotate in the first direction. Here, the first direction may be a forward direction, for example, clockwise.

The first roller 310 may provide the wound flexible substrate 110 to the drum 210 inside the chamber 201. At this time, predetermined patterns, for example, a driving circuit, may be formed on the flexible substrate 110.

The drum 210 can transport the flexible substrate 110 along the outer peripheral surface. Then, a reaction gas is sprayed from the showerhead 220 inside the chamber 201, and accordingly, a predetermined thin film, for example, a first protective film, may be deposited on the patterns on one surface of the flexible substrate 110.

The second roller 320 may recover the flexible substrate 110 on which the first protective film is deposited from the drum 210.

Next, referring to FIGS. 2 and 3B, the first roller 310, drum 210, and second roller 320 of the plasma processing apparatus 200 may all rotate in the second direction. Here, the second direction may be opposite to the first direction previously described in FIG. 3A.

The second roller 320 can provide the rolled flexible substrate 110 to the drum 210 inside the chamber 201. At this time, a first protective film may be formed on one surface of the flexible substrate 110 by the operation of the plasma processing device 200 according to FIG. 3A.

The drum 210 can transport the flexible substrate 110 along the outer peripheral surface. In addition, a reaction gas is sprayed from the showerhead 220 inside the chamber 201, and accordingly, a second protective film can be deposited on one surface of the flexible substrate 110 on the first protective film.

The first roller 310 may recover the flexible substrate 110 on which the second protective film is deposited from the drum 210. Next, the plasma processing device 200 may perform a cleaning process inside the chamber 201.

As described above, the plasma processing apparatus 200 sequentially rotates the first roller 310, the second roller 320, and the drum 210 in the first direction and the second direction to form the flexible substrate 110. A double thin film, for example, a first protective film and a second protective film, covering the driving circuit, that is, the driving transistor, can be deposited on one surface. Therefore, even if foreign substances such as particles remaining in the chamber 201 fall on the flexible substrate 110 during the cleaning process of the plasma processing device 200, the driving transistor and the first protective film below are damaged by the second protective film at the uppermost part. You can prevent it from happening.

FIG. 4 is a flowchart of the manufacturing process of the flexible display device of the present invention, and FIGS. 5A to 5D are diagrams showing the manufacturing process of the flexible display device according to an embodiment of the present invention.

The flexible display device 100 of the present invention can be formed by providing the flexible substrate 110 to the plasma processing apparatus 200 in a roll-to-roll manner. Therefore, as shown in FIG. 5A, the flexible substrate 110 provided as the plasma processing apparatus 200 may include a plurality of panel areas (PA), each of which forms one flexible display device 100. . Additionally, a dummy area (DA) may be formed between the plurality of panel areas (PA) of the flexible substrate 110 to distinguish them and cut them.

A driving circuit, for example, a driving transistor (TFT), for driving the flexible display device 100 may be configured in each of the plurality of panel areas (PA). The driving transistor (TFT) may be formed with a top gate structure including a semiconductor layer 121, a gate electrode 122, a source electrode 123, and a drain electrode 124 located on the flexible substrate 110.

Here, a gate insulating film 131 is formed between the semiconductor layer 121 and the gate electrode 122, and an interlayer insulating film 133 is formed between the gate electrode 122, the source electrode 123, and the drain electrode 124. It can be. A gate insulating film 131 and an interlayer insulating film 133 thereon may be formed in the dummy area DA.

As described above, the flexible substrate 110 on which the driving transistor (TFT) is formed in each panel area (PA) is moved into the chamber 201 in a roll-to-roll manner through the first roller 310 of the plasma processing device 200. May be provided (S10). At this time, the first roller 310, drum 210, and second roller 320 of the plasma processing apparatus 200 may be rotated in the forward direction, for example, in the first direction. Accordingly, the flexible substrate 110 can be provided from the first roller 310 to the drum 210, and the flexible substrate 110 can be recovered from the drum 210 to the second roller 320.

Next, a plasma area PA may be formed inside the chamber 201 by the reaction gas sprayed from the showerhead 220. Therefore, as shown in FIG. 5B, one side of the flexible substrate 110 transported inside the chamber 201 along the outer peripheral surface of the drum 210, that is, the top of the driving transistor (TFT), is formed with a first protective film 135 of a predetermined thickness. ) can be deposited (S20).

The first protective film 135 may be deposited on both the panel area (PA) and the dummy area (DA) of the flexible substrate 110. The flexible substrate 110 on which the first protective film 135 is deposited can be recovered by the second roller 320.

When recovery of the flexible substrate 110 of the second roller 320 is completed, the first roller 310, drum 210, and second roller 320 of the plasma processing apparatus 200 move in the reverse direction, for example, in the second direction. can be rotated. Accordingly, the flexible substrate 110 can be provided from the second roller 320 to the drum 210, and the flexible substrate 110 can be recovered from the drum 210 to the first roller 310 (S30).

Next, a plasma area PA may be formed inside the chamber 201 by the reaction gas sprayed from the showerhead 220. Therefore, as shown in FIG. 5C, one side of the flexible substrate 110 transported inside the chamber 201 along the outer peripheral surface of the drum 210, that is, on the top of the first protective film 135, is formed with a second protective film ( 140) may be deposited (S40).

The second protective film 140 may be deposited on the first protective film 135 to a thickness of 100 to 500 Å. The second protective film 140 is made of metal oxide such as aluminum oxide (AlxOy), silicon oxide (SiOx), titanium oxide (TiOx), tantalum oxide (TaxOy), or silicon nitride (SiNx), aluminum nitride (AlNx), and titanium nitride (TiNx). ) and other metal nitrogen compounds.

Additionally, the second protective film 140 may be deposited on both the panel area (PA) and the dummy area (DA) of the flexible substrate 110. The flexible substrate 110 on which the second protective film 140 is deposited can be recovered by the first roller 310.

After the second protective film 140 is deposited on the flexible substrate 110, the plasma processing apparatus 200 may perform a cleaning process of the chamber 201 (S50). Here, during the cleaning process of the chamber 201, the rotational movement of the first roller 310, the second roller 320, and the drum 210 of the plasma processing apparatus 200 may be stopped.

During the cleaning process of the chamber 201, foreign substances such as particles remaining in the chamber 201 fall onto the flexible substrate 110 wound around the drum 210. However, in the manufacturing process of the flexible display device 100 of this embodiment, the first protective film 135 and the second protective film 140 are double deposited on the upper part of the driving transistor (TFT) of the flexible substrate 110, so that the uppermost The first protective film 135 and the driving transistor (TFT) below it can be protected from foreign substances by the second protective film 140. Therefore, in the flexible display device 100 of the present invention, it is possible to prevent defects from occurring due to damage to patterns, such as the first protective film 135 and the driving transistor (TFT), by foreign substances during the manufacturing process.

Subsequently, as shown in FIG. 5D, the flexible substrate 110, on which deposition of the second protective film 140 is completed and recovered on the first roller 310, can be transferred to an external etching device (not shown). . Then, inside the etching device, the second protective film 140 and the first protective film 135 below it are etched together to form a contact hole 137 exposing a portion of the drain electrode 124 of the driving transistor (TFT). You can.

And, although not shown in the drawing, an organic light emitting device (OLED in FIG. 1) connected to a driving transistor (TFT) may be formed on the second protective film 140. After the organic light emitting device is formed, the dummy area DA of the flexible substrate 110 is cut, thereby completing a plurality of flexible display devices 100 according to a plurality of panel areas PA.

6A to 6B are diagrams showing a manufacturing process of a flexible display device according to another embodiment of the present invention.

The manufacturing process of the flexible display device 100 of this embodiment is substantially the same as the manufacturing process described above with reference to FIGS. 5A to 5D except for the difference in the deposition structure of the second protective film 140. Therefore, identical members are denoted by identical symbols, and detailed description thereof will be omitted.

As shown in FIG. 6A, the flexible substrate 110 may include a plurality of panel areas (PA), each of which forms one flexible display device 100, and a dummy area (DA) between them. Additionally, a driving transistor (TFT) may be configured in each panel area (PA).

This flexible substrate 110 may be provided into the chamber 201 in a roll-to-roll manner through the first roller 310 of the plasma processing apparatus 200 (S10). At this time, the first roller 310, drum 210, and second roller 320 of the plasma processing apparatus 200 may be rotated in the first direction. Accordingly, the flexible substrate 110 can be provided from the first roller 310 to the drum 210, and the flexible substrate 110 can be recovered from the drum 210 to the second roller 320.

Next, a plasma area PA may be formed inside the chamber 201 by the reaction gas sprayed from the showerhead 220. Therefore, as shown in FIG. 5B, a first protective film 135 is deposited to a predetermined thickness on the upper part of the driving transistor (TFT) of the flexible substrate 110 transported inside the chamber 201 along the outer peripheral surface of the drum 210. It can be (S20).

The first protective film 135 may be deposited on both the panel area (PA) and the dummy area (DA) of the flexible substrate 110. The flexible substrate 110 on which the first protective film 135 is deposited can be recovered by the second roller 320.

When recovery of the flexible substrate 110 of the second roller 320 is completed, the first roller 310, drum 210, and second roller 320 of the plasma processing apparatus 200 are rotated in the second direction. You can. Accordingly, the flexible substrate 110 can be provided from the second roller 320 to the drum 210, and the flexible substrate 110 can be recovered from the drum 210 to the first roller 310 (S30).

Next, a plasma area PA may be formed inside the chamber 201 by the reaction gas sprayed from the showerhead 220. Accordingly, the second protective film 140 may be deposited to a predetermined thickness on the top of the first protective film 135 of the flexible substrate 110 transported inside the chamber 201 along the outer peripheral surface of the drum 210 (S40).

The second protective film 140 may be deposited to correspond to each of the plurality of panel areas (PA) of the flexible substrate 110. The second protective film 140 may be deposited on the first protective film 135 to a thickness of 100 to 500 Å. The second protective film 140 is made of metal oxide such as aluminum oxide (AlxOy), silicon oxide (SiOx), titanium oxide (TiOx), tantalum oxide (TaxOy), or silicon nitride (SiNx), aluminum nitride (AlNx), and titanium nitride (TiNx). ) and other metal nitrogen compounds. The flexible substrate 110 on which the second protective film 140 is deposited can be recovered by the first roller 310.

After the second protective film 140 is deposited on the flexible substrate 110, the plasma processing apparatus 200 may perform a cleaning process of the chamber 201 (S50). Here, during the cleaning process of the chamber 201, the rotational movement of the first roller 310, the second roller 320, and the drum 210 of the plasma processing apparatus 200 may be stopped.

During the cleaning process of the chamber 201, foreign substances such as particles remaining in the chamber 201 fall onto the flexible substrate 110 wound around the drum 210. However, in the manufacturing process of the flexible display device 100 of this embodiment, the first protective film 135 and the second protective film 140 are double deposited on the upper part of the driving transistor (TFT) of the flexible substrate 110, so that the uppermost The first protective film 135 and the driving transistor (TFT) in the panel area (PA) can be protected from foreign substances by the second protective film 140. Therefore, in the flexible display device 100 of the present invention, it is possible to prevent defects from occurring due to damage to patterns, such as the first protective film 135 and the driving transistor (TFT), by foreign substances during the manufacturing process.

Subsequently, as shown in FIG. 6B, the flexible substrate 110, on which deposition of the second protective film 140 is completed and recovered on the first roller 310, can be transferred to an external etching device (not shown). . Then, inside the etching device, the second protective film 140 and the first protective film 135 below it are etched together to form a contact hole 137 exposing a portion of the drain electrode 124 of the driving transistor (TFT). You can.

And, although not shown in the drawing, an organic light emitting device (OLED in FIG. 1) connected to a driving transistor (TFT) may be formed on the second protective film 140. After the organic light emitting device is formed, the dummy area DA of the flexible substrate 110 is cut, thereby completing a plurality of flexible display devices 100 according to a plurality of panel areas PA.

Although many details are described in detail in the foregoing description, this should be interpreted as an example of a preferred embodiment rather than limiting the scope of the invention. Therefore, the invention should not be determined by the described embodiments, but by the scope of the patent claims and their equivalents.

100: Flexible display device 110: Flexible substrate
TFT: Driving transistor OLED: Organic light emitting device
135: 1st shield 140: 2nd shield
200: Plasma processing device 201: Chamber
210: drum 220: shower head
310: first roller 320: second roller

Claims (14)

delete delete delete delete providing a flexible substrate composed of a plurality of panel areas and a dummy area in a first direction to a chamber of a roll-to-roll plasma processing apparatus;
depositing a first protective film on one surface of the flexible substrate inside the chamber;
providing a flexible substrate on which a first protective film is deposited to the chamber in a second direction opposite to the first direction; and
And depositing a second protective film on the first protective film inside the chamber,
The chamber is,
a drum that transfers the flexible substrate while rotating in the first direction and the second direction, respectively, inside the chamber;
A shower head that sprays cleaning gas provided from a gas supply unit; and
Includes a protection guide to protect the flexible substrate located in an area excluding the plasma area between the drum and the showerhead,
A method of manufacturing a flexible display device wherein the front portion of the showerhead has a curvature equal to the curvature of the outer peripheral surface of the drum. According to clause 5,
The first protective film and the second protective film are deposited to correspond to both the panel area and the dummy area of the flexible substrate. According to clause 5,
The first protective film is deposited to correspond to both the panel area and the dummy area of the flexible substrate,
The method of manufacturing a flexible display device wherein the second protective film is deposited to correspond to the panel area of the flexible substrate. According to clause 5,
A method of manufacturing a flexible display device in which the second protective film is deposited on the first protective film to a thickness of 100 to 500 Å. According to clause 5,
A method of manufacturing a flexible display device in which the second protective film is deposited with one of aluminum oxide, titanium oxide, tantalum oxide, aluminum nitride, and titanium nitride. According to clause 5,
A driving transistor is configured on the flexible substrate in each of the plurality of panel areas,
After the second protective film is deposited,
exposing the drain electrode of the driving transistor by etching the first protective film and the second protective film together; and
A method of manufacturing a flexible display device further comprising forming an organic light emitting element connected to a drain electrode exposed on the second protective film. According to clause 5,
A method of manufacturing a flexible display device in which the showerhead sprays a reaction gas provided from the gas supply unit while a predetermined voltage is applied from an external RF voltage source. According to clause 5,
The method of manufacturing a flexible display device in which the chamber is disposed with a first roller and a second roller for providing the flexible substrate to the outside into the chamber or recovering the flexible substrate from the chamber. According to clause 12,
The first roller operates as an unwinding roller to provide the flexible substrate into the chamber,
The method of manufacturing a flexible display device in which the second roller operates as a rewinding roller to recover the flexible substrate from the chamber. According to clause 12,
The first roller operates as a rewinding roller to recover the flexible substrate from the chamber,
The method of manufacturing a flexible display device in which the second roller operates as an unwinding roller to provide the flexible substrate into the chamber.