KR102610409B1 - Method of estimating remaining life of solid state drive device - Google Patents

Abstract

In a method of predicting the remaining lifespan of a solid state drive (SSD) device and a sensor in a system including a solid state drive (SSD) device, the sensor periodically measures environmental variables to generate a sensing value, and the solid state drive device Based on the distance between the sensor and the solid state drive device, the sensing value is converted to generate a load value applied to the solid state drive device, and the solid state drive device generates a stress applied to the solid state drive device based on the load value. Calculate the degree of damage based on the stress and the stress-life graph, which shows the relationship between the stress and the life of the solid-state drive device, and the life of the solid-state drive device based on the difference between the threshold and the degree of damage. to determine the remaining lifespan of the solid state drive device.

Description

{METHOD OF ESTIMATING REMAINING LIFE OF SOLID STATE DRIVE DEVICE}

The present invention relates to solid state drive (SSD) devices, and more specifically, to a method for predicting the remaining life of a solid state drive device.

Recently, as electronic circuits have been applied not only to electronic systems such as laptops, but also to various types of systems such as automobiles, aircraft, and drones, solid state drive (SSD) devices are also used in various types of systems. there is.

However, solid state drive devices cannot be used permanently, and there is a problem in that the frequency of error occurrence increases as the lifespan reaches a certain period.

Therefore, if an operation error occurs in the solid state drive device due to the end of life of the solid state drive device during operation of a system including the solid state drive device, there is a risk that a fatal error may occur in the system.

One purpose of the present invention to solve the above problems is to provide a method for predicting the remaining lifespan of a solid state drive (SSD) device in a system including the device.

In order to achieve the object of the present invention described above, a method of predicting the remaining lifespan of a solid state drive (SSD) device in a system including a solid state drive (SSD) device and a sensor according to an embodiment of the present invention. In, the sensor periodically measures environmental variables to generate a sensed value, and the solid-state drive device converts the sensed value based on the distance between the sensor and the solid-state drive device to provide a sensed value to the solid-state drive device. An applied load value is generated, the solid state drive device calculates a stress applied to the solid state drive device based on the load value, and the solid state drive device determines the difference between the stress and the life of the solid state drive device. The degree of damage is calculated based on the stress and a stress-life graph showing the relationship, and the solid state drive device determines the remaining life of the solid state drive device based on the difference between the threshold value and the degree of damage.

In order to achieve the object of the present invention described above, in a system including a solid state drive device and first to nth (n is a positive integer of 2 or more) sensors according to an embodiment of the present invention, the solid state drive device In the method of predicting the remaining lifespan of, the first to nth sensors periodically measure first to nth environmental variables to generate first to nth sensing values, and the solid state drive device generates the first to nth sensed values. Based on the distance between each of the n-th sensors and the solid-state drive device, the first to n-th sensing values are converted to generate first to n-th load values applied to the solid-state drive device, and the solid-state A drive device calculates first to nth stresses applied to the solid state drive device based on the first to nth load values, and the solid state drive device calculates the first to nth stresses and the solid state drive device. The degree of damage is calculated based on the first to nth stresses and first to nth stress-life graphs representing the relationship between the lifespan of the state drive device, and the solid state drive device determines a threshold value and the degree of damage. Based on the difference, the remaining lifespan of the solid state drive device is determined.

In order to achieve the object of the present invention described above, in a system including a solid state drive device and a sensor including first to mth (m is a positive integer of 2 or more) components according to an embodiment of the present invention, In a method of predicting the remaining life of a solid state drive device, the sensor periodically measures environmental variables to generate a sensing value, and the solid state drive device generates a sensing value based on the distance between the sensor and the solid state drive device. The sensing value is converted to generate a load value applied to the solid state drive device, and the solid state drive device generates first to mth stresses applied to each of the first to mth components based on the load value. Calculate, and the solid state drive device provides first to mth stresses and first to mth stress-life graphs representing a relationship between the first to mth stresses and a lifespan of the solid state drive device. The first to mth damage degrees are calculated based on the first to mth damage degrees, and the solid state drive device determines the The first to mth candidate remaining lifespans are determined, and the solid state drive device determines a minimum value among the first to mth candidate remaining lifespans as the remaining lifespan of the solid state drive device.

The system according to the present invention can effectively predict the remaining lifespan of a solid state drive (SSD) device by applying a cumulative damage law to sensing values periodically provided from a sensor included in the solid state drive (SSD) device.

1 is a block diagram showing a system according to an embodiment of the present invention.
FIG. 2 is a block diagram showing an example of a solid state drive (SSD) device included in the system of FIG. 1.
Figure 3 is a flowchart showing a method for predicting the remaining lifespan of a solid state drive device according to an embodiment of the present invention.
FIGS. 4 and 5 are block diagrams for explaining a process in which the solid state drive device shown in FIG. 1 converts a sensing value to generate a load value.
FIG. 6 is a diagram illustrating an example of a load graph used in the process of generating the load value by the solid state drive device.
FIG. 7 is a diagram illustrating an example of a load-stress conversion graph used in the process of the solid state drive device determining the stress based on the load value.
FIG. 8 is a flowchart showing an example of a process for calculating damage based on the stress-life graph shown in FIG. 3 and the stress.
FIG. 9 is a diagram illustrating an example of a stress-life graph used by the solid state drive device in the process of generating the damage diagram.
FIG. 10 is a diagram illustrating an example of a remaining life conversion graph used in the process of determining the remaining life of the solid state drive device based on the difference between the threshold value and the damage level.
11 is a flowchart showing a method for predicting the remaining lifespan of a solid state drive device according to another embodiment of the present invention.
Figure 12 is a block diagram showing a system according to an embodiment of the present invention.
Figure 13 is a flowchart showing a method for predicting the remaining lifespan of a solid state drive device according to an embodiment of the present invention.
FIG. 14 is a flowchart showing an example of a process for calculating damage based on the first to nth stress-life graphs and the first to nth stresses shown in FIG. 13.
Figure 15 is a block diagram showing a system according to an embodiment of the present invention.
Figure 16 is a flowchart showing a method for predicting the remaining lifespan of a solid state drive device according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the attached drawings. The same reference numerals are used for the same components in the drawings, and duplicate descriptions for the same components are omitted.

1 is a block diagram showing a system according to an embodiment of the present invention.

Referring to FIG. 1 , system 10 includes a solid state drive (SSD) device 100 and a sensor (SEN) 200 .

In one embodiment, system 10 may be any type of system that includes a solid state drive device 100, such as a laptop computer, automobile, airplane, drone, etc.

As shown in FIG. 1, depending on the embodiment, the sensor 200 may be located inside the solid state drive device 100 or outside the solid state drive device 100.

The sensor 200 periodically measures environmental variables and generates a sensing value (SV).

In one embodiment, the sensor 200 measures temperature, humidity, pressure, acceleration, vibration, mechanical stress, shock, radiation, dust, and electrical stress. A sensing value (SV) may be generated by periodically measuring the environmental variable corresponding to at least one. Accordingly, the sensor 200 may be implemented as at least one of a temperature sensor, a humidity sensor, a pressure sensor, an acceleration sensor, a vibration sensor, an external force sensor, a shock sensor, a radiation sensor, a dust sensor, and an electrical stress sensor.

However, the present invention is not limited to this, and the sensor 200 can generate a sensing value (SV) by measuring various types of environmental variables.

The solid state drive device 100 predicts the remaining lifespan of the solid state drive device 100 based on the sensing value (SV) periodically provided from the sensor 200.

In one embodiment, the solid state drive device 100 applies the sensing value (SV) periodically provided from the sensor 200 to the cumulative damage law to determine the remaining lifespan of the solid state drive device 100. can be predicted.

FIG. 2 is a block diagram showing an example of a solid state drive (SSD) device included in the system of FIG. 1.

Referring to FIG. 2, the solid state drive device 100 may include an SSD controller 110 and a plurality of non-volatile memory devices 120-1, 120-2, ..., 120-s. Here, s represents a positive integer.

A plurality of nonvolatile memory devices 120-1, 120-2, ..., 120-s may be used as a storage medium of the solid state drive device 100.

In one embodiment, each of the plurality of nonvolatile memory devices 120-1, 120-2, ..., 120-s may include a flash memory device.

The SSD controller 110 is connected to a plurality of non-volatile memory devices 120-1, 120-2, ..., 120-s through a plurality of channels (CH1, CH2, ..., CHs). You can.

The SSD controller 110 may control the operation of the non-volatile memory devices 120-1, 120-2, ..., 120-s.

For example, the SSD controller 110 transmits and receives a command signal, an address signal, and data with an external host, and operates a plurality of nonvolatile memory devices 120-1 and 120- based on the command signal and the address signal. 2, ..., 120-s) or read the data from a plurality of non-volatile memory devices 120-1, 120-2, ..., 120-s.

Additionally, the SSD controller 110 may periodically receive a sensing value (SV) from the sensor 200 located inside and/or outside the solid state drive device 100.

The SSD controller 110 may predict the remaining lifespan of the solid state drive device 100 based on the sensing value (SV) periodically provided from the sensor 200.

A method by which the SSD controller 110 predicts the remaining lifespan of the solid state drive device 100 will be described later with reference to FIG. 3 .

Figure 3 is a flowchart showing a method for predicting the remaining lifespan of a solid state drive device according to an embodiment of the present invention.

The method for predicting the remaining life of the solid state drive device of FIG. 3 may be performed through the system 10 shown in FIG. 1 .

Hereinafter, a method for predicting the remaining lifespan of the solid state drive device 100 performed in the system 10 will be described with reference to FIGS. 1 to 3.

The sensor 200 may periodically measure environmental variables and generate a sensing value (SV) (step S110).

In one embodiment, the sensor 200 periodically measures the environmental variable corresponding to at least one of temperature, humidity, pressure, acceleration, vibration, external force, shock, radiation, dust, and electrical stress to produce a sensing value (SV). ) can be created. Accordingly, the sensor 200 may be implemented as at least one of a temperature sensor, a humidity sensor, a pressure sensor, an acceleration sensor, a vibration sensor, an external force sensor, a shock sensor, a radiation sensor, a dust sensor, and an electrical stress sensor.

The solid state drive device 100 may receive a sensing value (SV) generated periodically from the sensor 200. The solid state drive device 100 can generate a load value applied to the solid state drive device 100 by converting the sensing value (SV) based on the distance between the sensor 200 and the solid state drive device 100. There is (step S120).

In one embodiment, sensor 200 may be located inside the solid state drive device 100. In this case, the environmental variable measured by the sensor 200 may be the same as the environmental variable applied to the solid state drive device 100. Therefore, the solid state drive device 100 can determine the sensing value (SV) as the load value without conversion. For example, the solid state drive device 100 may generate the load value by performing one-to-one conversion on the sensing value (SV).

In another embodiment, sensor 200 may be located external to solid state drive device 100. In this case, the environmental variables measured by the sensor 200 may be different from the environmental variables applied to the solid state drive device 100. Accordingly, the solid state drive device 100 may determine the load value corresponding to the sensing value SV based on the distance between the sensor 200 and the solid state drive device 100.

For example, when the distance between the sensor 200 and the solid state drive device 100 is close, the solid state drive device 100 may generate the load value by changing the sensing value (SV) relatively little. . On the other hand, when the distance between the sensor 200 and the solid state drive device 100 is long, the solid state drive device 100 may generate the load value by changing the sensing value SV relatively much.

In one embodiment, the solid state drive device 100 determines the load value corresponding to the sensing value (SV) using a load graph determined based on the distance between the sensor 200 and the solid state drive device 100. can be decided. The load graph may be predefined using data obtained through repetitive experiments performed on the system 10.

FIGS. 4 and 5 are block diagrams for explaining a process in which the solid-state drive device shown in FIG. 1 generates a load value by converting a sensing value, and FIG. 6 illustrates a process in which the solid-state drive device generates the load value. This is a diagram showing an example of a load graph used in the process.

4 and 5, the sensor 200 included in the system 10 corresponds to the temperature sensor (TEMP_SEN) 210, which is shown as being located external to the solid state drive device 100. do.

In FIG. 6 , the horizontal axis represents the sensing value (SV) generated from the temperature sensor 210, and the vertical axis represents the load value applied to the solid state drive device 100.

4 and 5, system 10 may include a heat source 220 that generates heat.

In the embodiment shown in FIG. 4 , the solid state drive device 100 may be located on the first side of the temperature sensor 210 and the heat source 220 may be located on the second side of the temperature sensor 210 . That is, the solid state drive device 100 and the heat source 220 may be located in different directions from the temperature sensor 210. Therefore, the temperature measured from the temperature sensor 210 may be higher than the temperature applied to the solid state drive device 100.

In this case, the load graph may be defined as the first graph (G1) shown in FIG. 6. Accordingly, the solid state drive device 100 may generate the load value by reducing the sensing value (SV) by a certain amount.

In contrast, in the embodiment shown in FIG. 5, the heat source 220 is located on the first side of the solid state drive device 100, and the temperature sensor 210 is located on the second side of the solid state drive device 100. can do. That is, the heat source 220 and the temperature sensor 210 may be located in different directions from the solid state drive device 100. Accordingly, the temperature measured from the temperature sensor 210 may be lower than the temperature applied to the solid state drive device 100.

In this case, the load graph may be defined as the second graph G2 shown in FIG. 6. Accordingly, the solid state drive device 100 may generate the load value by increasing the sensing value (SV) by a certain amount.

Referring to FIGS. 4 to 6, when the sensor 200 is located outside the solid state drive device 100, the solid state drive device 100 measures the distance between the sensor 200 and the solid state drive device 100. An example of a process for determining the load value corresponding to the sensing value (SV) has been described using the load graph predefined based on , but the present invention is not limited thereto, and the solid state drive device 100 The load value corresponding to the sensing value (SV) can be determined using the load graph predefined in various forms.

Referring again to FIG. 3, the solid state drive device 100 may calculate the stress applied to the solid state drive device 100 based on the load value (step S130).

In one embodiment, the solid state drive device 100 may determine the stress corresponding to the load value using a predefined load-stress conversion graph.

FIG. 7 is a diagram illustrating an example of a load-stress conversion graph used in the process of the solid state drive device determining the stress based on the load value.

In FIG. 7 , the horizontal axis represents the load value, and the vertical axis represents the stress applied to the solid state drive device 100.

Referring to FIG. 7, as the load value increases, the stress applied to the solid state drive device 100 also increases, and as the load value decreases, the stress applied to the solid state drive device 100 may also decrease. there is.

As shown in FIG. 7, the stress may be non-linearly proportional to the load value.

In one embodiment, the load-stress conversion graph may be predefined using data obtained by measuring the stress applied to the solid state drive device 100 while changing the load value.

Accordingly, the solid state drive device 100 can determine the stress corresponding to the load value using the load-stress conversion graph. For example, as shown in FIG. 7, when the load value is “ld1”, the solid state drive device 100 may determine the stress as “st1”.

Above, with reference to FIG. 7, it has been described that the solid state drive device 100 calculates the stress applied to the solid state drive device 100 based on the load value, but the present invention is not limited thereto. The solid state drive device 100 may calculate a strain applied to the solid state drive device 100 based on the load value. In this case, the solid state drive device 100 may operate using the strain rate instead of the stress in the following steps.

Hereinafter, for convenience of explanation, the solid state drive device 100 will be described as calculating the stress applied to the solid state drive device 100 based on the load value.

Referring again to FIG. 3, the solid state drive device 100 may calculate the degree of damage based on the stress and a stress-life graph showing the relationship between the stress and the lifespan of the solid state drive device 100 (step S140).

In one embodiment, the solid state drive device 100 may calculate the damage corresponding to the stress using a cumulative damage law.

For example, the solid state drive device 100 may calculate the degree of damage corresponding to the stress using Miner's rule.

FIG. 8 is a flowchart showing an example of a process for calculating damage based on the stress-life graph shown in FIG. 3 and the stress.

FIG. 8 shows an example of how the solid state drive device 100 calculates the damage corresponding to the stress using Miner's rule.

FIG. 9 is a diagram illustrating an example of a stress-life graph used by the solid state drive device in the process of generating the damage diagram.

In Figure 9, the vertical axis represents the magnitude of the stress applied to the solid-state drive device 100, and the horizontal axis represents the stress values of the stress until an operation error occurs in the solid-state drive device 100. Indicates the maximum frequency that can be applied to the device 100.

For example, as shown in FIG. 9, since the solid state drive device 100 is first operated, the stress having a first stress value st1 in the solid state drive device 100 has a first frequency N1. ), an operation error may occur in the solid state drive device 100. Similarly, since the solid-state drive device 100 is first operated, when the stress having the j-th stress value (stj) is repeatedly applied to the solid-state drive device 100 at the j-th frequency (Nj), the solid-state An operation error may occur in the drive device 100. Here, j represents a positive integer.

The stress-life graph may be predefined using data obtained through repeated experiments performed on system 10.

When the stress applied to the solid state drive device 100 has first to kth stress values, Miner's rule can be defined as [Equation 1] below. Here, k represents a positive integer.

[Equation 1]

here, represents the frequency with which the stress having the i th stress value has been applied to the solid state drive device 100 since the solid state drive device 100 first operated, represents the maximum frequency at which the stress having the ith stress value can be applied to the solid state drive device 100 until an operation error occurs in the solid state drive device 100, and C represents the degree of damage.

Hereinafter, with reference to FIGS. 8 and 9, a process in which the solid state drive device 100 calculates the damage corresponding to the stress using Miner's rule and the stress-life graph will be described.

Referring to FIG. 8, the solid state drive device 100 may calculate the frequency of each stress value of the stress periodically generated in response to the sensing value (SV) periodically generated from the sensor 200 ( Step S141).

Additionally, the solid state drive device 100 may use the stress-life graph to determine the maximum frequencies at which the stress can have each of the stress values until a failure occurs in the solid state drive device 100 ( Step S143).

Thereafter, the solid state drive device 100 may determine the damage as the sum of the values obtained by dividing the frequency of each of the stress values by each of the maximum frequencies corresponding to the stress values (step S145).

For example, the solid state drive device 100 has the frequency ( ) and the maximum frequency ( ) can be calculated by applying the above [Equation 1] to the damage (C).

Referring again to FIG. 3, the solid state drive device 100 may determine the remaining lifespan of the solid state drive device 100 based on the difference between the threshold value and the degree of damage (step S150). The threshold may be determined in advance.

In one embodiment, the solid state drive device 100 determines the degree of damage using a remaining life conversion graph representing the relationship between the difference between the threshold value and the degree of damage and the remaining life of the solid state drive device 100. It is possible to determine the remaining lifespan of the corresponding solid state drive device 100.

If the damage reaches the threshold, an operation error may occur in the solid state drive device 100. Accordingly, as the difference between the threshold value and the degree of damage increases, the remaining lifespan of the solid state drive device 100 may be determined to be relatively large. On the other hand, as the difference between the threshold value and the degree of damage is smaller, the remaining lifespan of the solid state drive device 100 may be determined to be relatively small.

FIG. 10 is a diagram illustrating an example of a remaining life conversion graph used in the process of determining the remaining life of the solid state drive device based on the difference between the threshold value and the damage level.

In FIG. 10 , the horizontal axis represents the difference between the threshold value (THV) and the damage degree (DAM), and the vertical axis represents the remaining lifespan of the solid state drive device 100.

As shown in FIG. 10, the remaining lifespan of the solid state drive device 100 may be proportional to the difference between the threshold value and the degree of damage.

For example, when the difference between the threshold value and the damage level is “d1”, the solid state drive device 100 may determine that the remaining life of the solid state drive device 100 is “r1”.

The remaining life conversion graph may be predefined using data obtained through repetitive experiments performed on the system 10.

As described above with reference to FIGS. 1 to 10, the system 10 according to the present invention applies the sensing value (SV) periodically provided from the sensor 200 to the cumulative damage law of the solid state drive device 100. The remaining life can be effectively predicted.

11 is a flowchart showing a method for predicting the remaining lifespan of a solid state drive device according to another embodiment of the present invention.

The method for predicting the remaining life of the solid state drive device of FIG. 11 may be performed through the system 10 shown in FIG. 1 .

The steps (S110 to S150) included in the method for predicting the remaining lifespan of the solid state drive device 100 of FIG. 11 are the steps (S110 to S150) included in the method for predicting the remaining lifespan of the solid state drive device 100 of FIG. 3. ) is the same as Therefore, redundant explanations are omitted.

As described above with reference to FIGS. 1 to 10, the solid state drive device 100 may update the damage level based on the sensing value (SV) periodically received from the sensor 200.

Referring to FIG. 11, the solid state drive device 100 may calculate the increase rate of the damage per unit time (step S160).

Thereafter, the solid state drive device 100 may compare the increase rate of the damage per unit time with a predetermined threshold increase rate (step S170).

If the increase rate of the damage per unit time is greater than the predetermined threshold increase rate (step S170; Yes), the solid state drive device 100 may determine that rapid damage has occurred in the solid state drive device 100. For example, if the system 10 is a car and a collision accident occurs in the car, the increase rate per unit time of the damage may be greater than the predetermined threshold increase rate. Alternatively, when the system 10 is a drone and the drone crashes, the increase rate per unit time of the damage may be greater than the predetermined threshold increase rate.

Therefore, when the increase rate of the damage per unit time is greater than the predetermined threshold increase rate (step S170; Yes), the solid state drive device 100 may generate an alarm signal (step S180).

Accordingly, the administrator of the system 10 can take appropriate action, such as backing up data stored in the solid state drive device 100 or replacing the solid state drive device 100, in response to the alarm signal.

Meanwhile, after step S150 of FIG. 11, life information indicating the remaining life may be provided to the user and/or developer of the system 10 and/or the solid state drive device 100 (step S155). For example, the lifespan information may be provided periodically or aperiodically.

Figure 12 is a block diagram showing a system according to an embodiment of the present invention.

Referring to FIG. 12, the system 20 includes a solid state drive (SSD) device 100 and first to nth sensors (SEN) 200-1 to 200-n. Here, n represents a positive integer.

In one embodiment, system 20 may be any type of system that includes a solid state drive device 100, such as a laptop computer, automobile, airplane, drone, etc.

Each of the first to nth sensors 200-1 to 200-n may be located inside the solid state drive device 100 or may be located outside the solid state drive device 100.

For example, as shown in FIG. 12, the first to kth sensors 200-1 to 200-k are located outside the solid state drive device 100, and the (k+1)th to nth sensors 200-1 to 200-k are located outside the solid state drive device 100. Sensors 200-(k+1) to 200-n may be located inside the solid state drive device 100. Here, k represents a positive integer less than or equal to n.

Each of the first to nth sensors 200-1 to 200-n periodically measures first to nth environmental variables and generates first to nth sensing values SV1 to SVn.

In one embodiment, each of the first to nth environmental variables may correspond to at least one of temperature, humidity, pressure, acceleration, vibration, external force, shock, radiation, dust, and electrical stress. Therefore, each of the first to nth sensors (200-1 to 200-n) is a temperature sensor, humidity sensor, pressure sensor, acceleration sensor, vibration sensor, external force sensor, shock sensor, radiation sensor, dust sensor, and electrical stress sensor. It can be implemented with at least one of:

However, the present invention is not limited to this, and each of the first to nth sensors (200-1 to 200-n) measures various types of environmental variables and provides first to nth sensing values (SV1 to SVn). can be created.

The solid state drive device 100 is a solid state drive device based on the first to nth sensing values (SV1 to SVn) periodically provided from each of the first to nth sensors (200-1 to 200-n). Predict the remaining lifespan of 100.

In one embodiment, the solid state drive device 100 receives first to nth sensing values (SV1 to SVn) periodically provided from each of the first to nth sensors (200-1 to 200-n). The remaining lifespan of the solid state drive device 100 can be predicted by applying the cumulative damage law.

Figure 13 is a flowchart showing a method for predicting the remaining lifespan of a solid state drive device according to an embodiment of the present invention.

The method for predicting the remaining lifespan of the solid state drive device of FIG. 13 may be performed through the system 20 shown in FIG. 12 .

Hereinafter, a method for predicting the remaining lifespan of the solid state drive device 100 performed in the system 20 will be described with reference to FIGS. 12 and 13.

Each of the first to nth sensors 200-1 to 200-n may periodically measure the first to nth environmental variables to generate first to nth sensing values SV1 to SVn (step S210).

In one embodiment, each of the first to nth environmental variables may correspond to at least one of temperature, humidity, pressure, acceleration, vibration, external force, shock, radiation, dust, and electrical stress. Therefore, each of the first to nth sensors (200-1 to 200-n) is a temperature sensor, humidity sensor, pressure sensor, acceleration sensor, vibration sensor, external force sensor, shock sensor, radiation sensor, dust sensor, and electrical stress sensor. It can be implemented with at least one of:

The solid state drive device 100 generates first to nth sensing values (SV1 to SV1) based on the distance between each of the first to nth sensors (200-1 to 200-n) and the solid state drive device 100. SVn) can be converted to generate first to nth load values applied to the solid state drive device 100 (step S220).

For example, since the (k+1)th to nth sensors 200-(k+1) to 200-n are located inside the solid state drive device 100, the (k+1)th to nth sensors 200-(k+1) to 200-n are located inside the solid state drive device 100. Each of the (k+1) to nth environmental variables measured from each of the n sensors (200-(k+1) to 200-n) is the (k+)th environmental variable applied to the solid state drive device 100. 1) It may be the same as each of the to nth environment variables. Therefore, the solid state drive device 100 can determine the (k+1)th to nth sensing values (SV(k+1) to SVn) as the (k+1)th to nth load values without conversion. there is. For example, the solid state drive device 100 performs one-to-one conversion on the (k+1)th to nth sensing values (SV(k+1) to SVn) to n load values can be generated.

On the other hand, since the first to kth sensors 200-1 to 200-k are located outside the solid state drive device 100, each of the first to kth sensors 200-1 to 200-k Each of the first to kth environmental variables measured from may be different from each of the first to kth environmental variables applied to the solid state drive device 100. Therefore, the solid state drive device 100 generates first to kth sensing values SV1 based on the distance between each of the first to kth sensors 200-1 to 200-k and the solid state drive device 100. ~SVk) can be converted to generate the first to kth load values applied to the solid state drive device 100.

For example, when the distance between each of the first to kth sensors 200-1 to 200-k and the solid state drive device 100 is close, the solid state drive device 100 detects the first to kth sensors 200-1 to 200-k. The load value can be generated by changing each of the values (SV1 to SVk) relatively little. On the other hand, when the distance between each of the first to kth sensors 200-1 to 200-k and the solid state drive device 100 is long, the solid state drive device 100 detects the first to kth sensing values. The load value can be generated by changing each of SV1 to SVk relatively much.

In one embodiment, the solid state drive device 100 has first to kth sensors 200-1 to 200-k determined based on the distance between each of the first to kth sensors 200-1 to 200-k and the solid state drive device 100. The first to kth load values corresponding to each of the first to kth sensed values (SV1 to SVk) can be determined using the kth load graphs. The first to kth load graphs may be predefined using data obtained through repetitive experiments performed on the system 20.

The solid state drive device 100 may determine the first to kth load values corresponding to each of the first to kth sensing values SV1 to SVk in the same manner as described above with reference to FIGS. 4 to 6. .

Thereafter, the solid state drive device 100 may calculate first to nth stresses applied to the solid state drive device 100 based on the first to nth load values (step S230).

In one embodiment, the solid state drive device 100 uses each of the first to nth predefined load-stress conversion graphs to generate the first to nth load values corresponding to each of the first to nth load values. n stresses can be determined.

The solid state drive device 100 may determine the first to nth stresses corresponding to each of the first to nth load values in the same manner as described above with reference to FIG. 7 .

Thereafter, the solid state drive device 100 displays first to nth stress-life graphs indicating the relationship between each of the first to nth stresses and the lifespan of the solid state drive device 100, and the first to nth stress-life graphs. The degree of damage can be calculated based on n stresses (step S240).

In one embodiment, the solid state drive device 100 may calculate the degree of damage corresponding to the first to nth stresses using a cumulative damage law.

For example, the solid state drive device 100 may calculate the degree of damage corresponding to the first to nth stresses using Miner's rule.

FIG. 14 is a flowchart showing an example of a process for calculating damage based on the first to nth stress-life graphs and the first to nth stresses shown in FIG. 13.

Each of the first to nth stress-life graphs may be defined in the same manner as described above with reference to FIG. 9.

Referring to FIG. 14, the solid state drive device 100 may calculate the frequency of each stress value of the periodically generated first stress (step S243).

Additionally, the solid state drive device 100 uses the first stress-life graph to determine the maximum frequencies at which the first stress can have each of the stress values until an error occurs in the solid state drive device 100. It can be decided (step S245).

Thereafter, the solid state drive device 100 may determine the sum of the values obtained by dividing the frequency of each of the stress values by each of the maximum frequencies as the first sub-damage degree (step S247).

For example, the solid state drive device 100 has the frequency ( ) and the maximum frequency ( ) can be calculated by applying the above [Equation 1] to the first sub-damage degree.

As shown in FIG. 14, the solid state drive device 100 performs the above-described steps (S243, S245, and S247) for each of the second to nth stresses to obtain the second to nth sub-damage degrees. can be determined (step S241).

Thereafter, the solid state drive device 100 may determine the sum of the first to nth sub-damage degrees as the damage degree (step S249).

Referring again to FIG. 13, the solid state drive device 100 may determine the remaining lifespan of the solid state drive device 100 based on the difference between the threshold value and the damage level (step S250). The threshold may be determined in advance.

In one embodiment, the solid state drive device 100 determines the damage level using a remaining life conversion graph representing the relationship between the difference between the threshold value and the damage level and the remaining lifespan of the solid state drive device 100. It is possible to determine the remaining lifespan of the corresponding solid state drive device 100.

For example, the solid state drive device 100 determines the remaining life of the solid state drive device 100 corresponding to the degree of damage using the remaining life conversion graph in the same manner as described above with reference to FIG. 10. You can.

If the damage reaches the threshold, an operation error may occur in the solid state drive device 100. Accordingly, as the difference between the threshold value and the degree of damage increases, the remaining lifespan of the solid state drive device 100 may be determined to be relatively large. On the other hand, as the difference between the threshold value and the degree of damage is smaller, the remaining lifespan of the solid state drive device 100 may be determined to be relatively small.

As described above with reference to FIGS. 12 to 14, the system 20 according to the present invention provides first to nth sensing values periodically provided from each of the first to nth sensors 200-1 to 200-n. The remaining lifespan of the solid state drive device 100 can be effectively predicted by applying the cumulative damage law (SV1 to SVn).

Meanwhile, after step S250 of FIG. 13, at least one of steps S155, S160, S170, and S180 shown in FIG. 11 may be additionally performed, depending on the embodiment.

Figure 15 is a block diagram showing a system according to an embodiment of the present invention.

Referring to FIG. 15 , system 30 includes a solid state drive (SSD) device 100 and a sensor (SEN) 200.

In one embodiment, system 30 may be any type of system that includes a solid state drive device 100, such as a laptop computer, automobile, airplane, drone, etc.

As shown in FIG. 15 , depending on the embodiment, the sensor 200 may be located inside the solid state drive device 100 or outside the solid state drive device 100.

The sensor 200 periodically measures environmental variables and generates a sensing value (SV).

In one embodiment, the sensor 200 periodically measures the environmental variable corresponding to at least one of temperature, humidity, pressure, acceleration, vibration, external force, shock, radiation, dust, and electrical stress to produce a sensing value (SV). ) can be created. Accordingly, the sensor 200 may be implemented as at least one of a temperature sensor, a humidity sensor, a pressure sensor, an acceleration sensor, a vibration sensor, an external force sensor, a shock sensor, a radiation sensor, a dust sensor, and an electrical stress sensor.

However, the present invention is not limited to this, and the sensor 200 can generate a sensing value (SV) by measuring various types of environmental variables.

As shown in FIG. 15, the solid state drive device 100 may include first to mth components CP1 to CPm (150-1 to 150-m). Here, m represents a positive integer of 2 or more.

Each of the first to mth components 150 - 1 to 150 - m may be any component included in the solid state drive device 100 .

In one embodiment, each of the first to mth components 150-1 to 150-m may be an electronic circuit such as a semiconductor package, a semiconductor chip, or a printed circuit board. For example, the first to m components 150-1 to 150-m each include an SSD controller 110 and a plurality of non-volatile memory devices 120 included in the solid state drive device 100 of FIG. 2. -1, 120-2, ..., 120-s), and an SSD controller 110 and a plurality of non-volatile memory devices (120-1, 120-2, ..., 120-s) are mounted. It may be at least one of a printed circuit board.

In another embodiment, each of the first to m components 150-1 to 150-m includes an SSD controller 110, a plurality of non-volatile memory devices 120-1, 120-2, ..., 120-s), and an electrical connection member included in the printed circuit board on which the SSD controller 110 and a plurality of non-volatile memory devices 120-1, 120-2, ..., 120-s are mounted. It may be at least one of a solder joint and solder used as a solder joint.

However, the present invention is not limited to this, and each of the first to m components 150 - 1 to 150 - m may be any component included in the solid state drive device 100 .

The solid state drive device 100 predicts the remaining lifespan of the solid state drive device 100 based on the sensing value (SV) periodically provided from the sensor 200.

In one embodiment, the solid state drive device 100 applies the sensing value (SV) periodically provided from the sensor 200 to the cumulative damage law to determine the remaining lifespan of the solid state drive device 100. can be predicted.

For example, the solid state drive device 100 applies the sensing value (SV) periodically provided from the sensor 200 to the cumulative damage law to the first to mth components 150-1 to 150-1. 150-m) The first to mth candidate remaining lifespans corresponding to each remaining lifespan are determined, and the minimum value among the first to mth candidate remaining lifespans can be predicted as the remaining lifespan of the solid state drive device 100. .

Figure 16 is a flowchart showing a method for predicting the remaining lifespan of a solid state drive device according to an embodiment of the present invention.

The method for predicting the remaining life of the solid state drive device of FIG. 16 may be performed through the system 30 shown in FIG. 15.

Hereinafter, a method for predicting the remaining lifespan of the solid state drive device 100 performed in the system 30 will be described with reference to FIGS. 15 and 16.

The sensor 200 may periodically measure environmental variables and generate a sensing value (SV) (step S310).

In one embodiment, the sensor 200 periodically measures the environmental variable corresponding to at least one of temperature, humidity, pressure, acceleration, vibration, external force, shock, radiation, dust, and electrical stress to produce a sensing value (SV). ) can be created. Accordingly, the sensor 200 may be implemented as at least one of a temperature sensor, a humidity sensor, a pressure sensor, an acceleration sensor, a vibration sensor, an external force sensor, a shock sensor, a radiation sensor, a dust sensor, and an electrical stress sensor.

The solid state drive device 100 may receive a sensing value (SV) generated periodically from the sensor 200. The solid state drive device 100 can generate a load value applied to the solid state drive device 100 by converting the sensing value (SV) based on the distance between the sensor 200 and the solid state drive device 100. There is (step S320).

In one embodiment, sensor 200 may be located inside the solid state drive device 100. In this case, the environmental variable measured by the sensor 200 may be the same as the environmental variable applied to the solid state drive device 100. Therefore, the solid state drive device 100 can determine the sensing value (SV) as the load value without conversion. For example, the solid state drive device 100 may generate the load value by performing one-to-one conversion on the sensing value (SV).

In another embodiment, sensor 200 may be located external to solid state drive device 100. In this case, the environmental variables measured by the sensor 200 may be different from the environmental variables applied to the solid state drive device 100. Accordingly, the solid state drive device 100 may determine the load value corresponding to the sensing value SV based on the distance between the sensor 200 and the solid state drive device 100.

For example, when the distance between the sensor 200 and the solid state drive device 100 is close, the solid state drive device 100 may generate the load value by changing the sensing value (SV) relatively little. . On the other hand, when the distance between the sensor 200 and the solid state drive device 100 is long, the solid state drive device 100 may generate the load value by changing the sensing value SV relatively much.

In one embodiment, the solid state drive device 100 determines the load value corresponding to the sensing value (SV) using a load graph determined based on the distance between the sensor 200 and the solid state drive device 100. can be decided. The load graph may be predefined using data obtained through repetitive experiments performed on the system 10.

The solid state drive device 100 may determine the load value corresponding to the sensing value (SV) in the same manner as described above with reference to FIGS. 4 to 6.

Thereafter, the solid state drive device 100 applies the first to m components 150-1 to 150-m included in the solid state drive device 100 based on the load value. m stresses can be calculated (step S330).

When a load corresponding to the above load value is applied to the solid state drive device 100, substantially each of the first to m components 150-1 to 150-m included in the solid state drive device 100 The applied stress may be different. Therefore, when a load corresponding to the load value is applied to the solid state drive device 100, the first to m components 150-1 included in the solid state drive device 100 ~150-m), the first to mth stresses applied to each can be calculated individually.

In one embodiment, the solid state drive device 100 uses predefined first to mth load-stress conversion graphs corresponding to each of the first to mth components 150-1 to 150-m. The first to mth stresses corresponding to the load value may be determined.

Each of the first to nth stress-life graphs may be defined in the same manner as described above with reference to FIG. 7.

Accordingly, the solid state drive device 100 can determine the first to mth stresses corresponding to the load values using the first to mth load-stress conversion graphs in the same manner as described above with reference to FIG. 7. there is.

Thereafter, the solid state drive device 100 displays first to mth stress-life graphs showing the relationship between each of the first to mth stresses and the lifespan of the solid state drive device 100, and the first to mth stress-life graphs. The first to mth damage degrees can be calculated respectively based on the m stresses (step S340).

In one embodiment, the solid state drive device 100 may calculate the first to mth damage degrees corresponding to the first to mth stresses using a cumulative damage law.

For example, the solid state drive device 100 may calculate the first to mth damage degrees corresponding to the first to mth stresses using Miner's rule.

Each of the first to mth stress-life graphs may be defined in the same manner as described above with reference to FIG. 9.

The solid state drive device 100 uses the first to mth stress-life graphs in the same manner as described above with reference to FIGS. 8 and 9 to obtain the first to mth stresses corresponding to each of the first to mth stresses. The mth damage degrees can be determined. Therefore, each of the first to mth damage degrees is the first to mth components included in the solid state drive device 100 when a load corresponding to the load value is applied to the solid state drive device 100 ( 150-1~150-m) can correspond to each damage degree.

Thereafter, the solid state drive device 100 selects the first to mth candidates of the solid state drive device 100 based on the differences between each of the first to mth threshold values and each of the first to mth damage degrees. Remaining lives may be determined (step S350). The first to mth threshold values may be determined in advance.

Accordingly, each of the first to mth candidate remaining lifespans may correspond to the remaining lifespan of each of the first to mth components 150-1 to 150-m included in the solid state drive device 100.

In one embodiment, the solid state drive device 100 determines a difference between each of the first to mth threshold values and each of the first to mth damage degrees and the remaining lifespan of the solid state drive device 100. The first to mth candidate remaining lifespans corresponding to each of the first to mth damage degrees may be determined using first to mth remaining life conversion graphs showing the relationship.

Each of the first to mth remaining life conversion graphs may be defined in the same manner as described above with reference to FIG. 10.

The solid state drive device 100 uses each of the first to mth remaining life conversion graphs in the same manner as described above with reference to FIG. 10 to determine the first to mth damage levels corresponding to each of the first to mth damage degrees. The to mth candidate remaining lifespans can be determined.

When the t-th damage reaches the t-th threshold, an operation error of the t-th component 150-t may occur. Accordingly, as the difference between the t-th threshold and the t-th damage degree increases, the t-th candidate remaining lifespan corresponding to the remaining lifespan of the t-th component 150-t may be determined to be relatively large. On the other hand, as the difference between the t-th threshold and the t-th damage degree is smaller, the t-th candidate remaining lifespan corresponding to the remaining lifespan of the t-th component 150-t may be determined to be relatively small. Here, t represents a positive integer of m or less.

Thereafter, the solid state drive device 100 may determine the minimum value among the first to mth candidate remaining lifespans as the remaining lifespan of the solid state drive device 100 (step S360).

As described above, each of the first to m candidate remaining lifespans corresponds to the remaining lifespan of each of the first to mth components 150-1 to 150-m included in the solid state drive device 100. You can.

If any one of the first to m components (150-1 to 150-m) included in the solid state drive device 100 reaches the end of its life and an error occurs, the overall operation of the solid state drive device 100 may be affected. Errors may occur.

Therefore, the solid state drive device 100 sets the minimum value among the first to m candidate remaining lifespans corresponding to the remaining lifespans of each of the first to mth components 150-1 to 150-m to the solid state drive device ( It can be determined by the remaining life of 100).

As described above with reference to FIGS. 15 and 16, the system 30 according to the present invention applies the sensing value (SV) periodically provided from the sensor 200 to the cumulative damage law to the solid state drive device 100. Determine the first to m candidate remaining lifespans corresponding to the remaining lifespans of each of the included first to mth components 150-1 to 150-m, and determine the minimum value among the first to mth candidate remaining lifespans. By determining as the remaining lifespan of the solid state drive device 100, the remaining lifespan of the solid state drive device 100 can be effectively predicted.

Meanwhile, after step S360 of FIG. 16, at least one of steps S155, S160, S170, and S180 shown in FIG. 11 may be additionally performed, depending on the embodiment.

The present invention can be usefully used in any system that includes a solid state drive (SSD) device.

As described above, the present invention has been described with reference to preferred embodiments, but those of ordinary skill in the art may vary the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. You will understand that it can be modified and changed.

Claims (20)

In a method for predicting the remaining life of a solid state drive (SSD) device in a system including a solid state drive (SSD) device and a sensor,
The sensor periodically measures environmental variables to generate a sensed value;
generating, by the solid state drive device, a load value applied to the solid state drive device by converting the sensing value based on the distance between the sensor and the solid state drive device;
calculating a stress applied to the solid state drive device based on the load value;
calculating, by the solid state drive device, a degree of damage based on the stress and a stress-life graph representing a relationship between the stress and the life of the solid state drive device; and
determining, by the solid state drive device, a remaining lifespan of the solid state drive device based on the difference between a threshold value and the degree of damage,
The solid state drive device uses a load graph determined based on the distance between the sensor and the solid state drive device, and uses different load graphs depending on the location of the heat source, the solid state drive device, and the sensor, A method for predicting the remaining lifespan of a solid state drive device that determines the load value corresponding to the sensing value. The method of claim 1, wherein the environmental variables correspond to at least one of temperature, humidity, pressure, acceleration, vibration, external force, shock, radiation, dust, and electrical stress. According to claim 1,
When the solid state drive device is located on the first side of the sensor and the heat source is located on the second side of the sensor, the load value is generated by reducing the sensing value by a certain amount using a first load graph. How to predict the remaining life of a solid state drive device. According to claim 1,
When the heat source is located on the first side of the solid state drive device and the sensor is located on the second side of the solid state drive device, the sensing value is increased by a certain amount using a second load graph to increase the load. A method of predicting the remaining life of a solid state drive device that generates a value. The method of claim 1, wherein the sensor is located outside the solid state drive device. delete The method of claim 1, wherein the solid state drive device determines the stress corresponding to the load value using a predefined load-stress conversion graph. The method of claim 1, wherein the solid state drive device calculates the degree of damage corresponding to the stress using a cumulative damage law. The method of claim 1, wherein the solid state drive device calculates the degree of damage based on the stress-life graph and the stress,
calculating the frequency of each stress value of the periodically generated stress;
using the stress-life graph to determine maximum frequencies at which the stress can have each of the stress values before a failure occurs in the solid state drive device; and
A method for predicting the remaining lifespan of a solid state drive device, comprising determining the sum of the values obtained by dividing the frequency of each of the stress values by each of the maximum frequencies as the damage. The method of claim 1, wherein the solid state drive device uses a remaining life conversion graph representing a relationship between the difference between the threshold and the degree of damage and the remaining life of the solid state drive device to determine the degree of damage corresponding to the degree of damage. A method for predicting the remaining life of a solid state drive device for determining the remaining life of the solid state drive device. According to claim 1,
calculating, by the solid state drive device, an increase rate of the damage per unit time; and
When the increase rate per unit time of the damage degree is greater than the threshold increase rate, the solid state drive device generates an alarm signal. In a method for predicting the remaining lifespan of a solid state drive device in a system including a solid state drive device and first to nth (n is a positive integer of 2 or more) sensors,
generating first to nth sensed values by the first to nth sensors periodically measuring first to nth environmental variables;
The solid state drive device converts the first to nth sensing values based on the distance between each of the first to nth sensors and the solid state drive device and applies the first to nth sensing values to the solid state drive device. generating n load values;
calculating, by the solid state drive device, first to nth stresses applied to the solid state drive device based on the first to nth load values;
The solid state drive device is damaged based on the first to nth stresses and first to nth stress-life graphs showing the relationship between the first to nth stresses and the life of the solid state drive device. calculating degrees; and
determining, by the solid state drive device, a remaining lifespan of the solid state drive device based on the difference between a threshold value and the degree of damage,
The first to kth (k is a positive integer less than or equal to n) sensors are located outside the solid state drive device,
The solid state drive device uses a load graph determined based on a distance between each of the first to kth sensors and the solid state drive device, and includes a heat source, the solid state drive device, and the first to kth sensors. A method for predicting the remaining lifespan of a solid state drive device, wherein the first to kth load values corresponding to the first to kth sensing values are determined using different load graphs according to each location. The method of claim 12, wherein each of the first to nth environmental variables corresponds to at least one of temperature, humidity, pressure, acceleration, vibration, external force, shock, radiation, dust, and electrical stress. How to predict lifespan. The method of claim 12, wherein the (k+1)th to nth sensors are located inside the solid state drive device. The method of claim 14, wherein the (k+1)th to nth sensing values are determined as (k+1)th to nth load values without conversion, thereby predicting the remaining lifespan of the solid state drive device. method. The method of claim 12, wherein the solid state drive device calculates the degree of damage based on the first to nth stress-life graphs and the first to nth stresses, comprising:
Calculating the frequency of each stress value of the periodically generated pth stress (p is a positive integer less than or equal to n);
using a pth stress-life graph to determine maximum frequencies at which the pth stress can have each of the stress values until a failure occurs in the solid state drive device;
determining the sum of the values obtained by dividing the frequency of each of the stress values by each of the maximum frequencies as the pth sub-damage degree; and
A method for predicting the remaining lifespan of a solid state drive device, comprising determining a sum of the first to nth sub-damage degrees as the damage degree. In a method for predicting the remaining lifespan of a solid state drive device in a system including a solid state drive device and a sensor including first to mth (m is a positive integer of 2 or more) components,
The sensor periodically measures environmental variables to generate a sensed value;
generating, by the solid state drive device, a load value applied to the solid state drive device by converting the sensing value based on the distance between the sensor and the solid state drive device;
calculating, by the solid state drive device, first to mth stresses applied to each of the first to mth components based on the load value;
The solid state drive device is configured to perform a first to mth stress based on the first to mth stresses and first to mth stress-life graphs representing a relationship between the first to mth stresses and a lifespan of the solid state drive device. Calculating 1st to mth damage degrees;
determining, by the solid state drive device, first to mth candidate remaining lifespans of the solid state drive device based on differences between each of first to mth threshold values and each of the first to mth damage degrees; and
A method for predicting the remaining lifespan of a solid-state drive device, comprising the step of determining, by the solid-state drive device, a minimum value among the first to mth candidate remaining lifespans as the remaining lifespan of the solid-state drive device. The method of claim 17, wherein each of the first to mth components corresponds to at least one of a semiconductor package, a semiconductor chip, a solder joint, a printed circuit board, and solder. The method of claim 17, wherein the solid state drive device uses predefined first to mth load-stress conversion graphs corresponding to each of the first to mth components to generate the first to mth load values corresponding to the load values. A method for predicting remaining life of a solid state drive device determining mth stresses. The method of claim 17, wherein the solid state drive device represents a relationship between a difference between each of the first to mth threshold values and each of the first to mth damage degrees and the remaining lifespan of the solid state drive device. A method for predicting the remaining lifespan of a solid state drive device that determines the first to mth candidate remaining lifespans corresponding to each of the first to mth damage degrees using first to mth remaining lifespan conversion graphs.

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