KR102601796B1 - Multi-color photodetector and hyperspectral imaging system using the same - Google Patents

Abstract

A multi-wavelength optical detector and a hyperspectral imaging system using the same are disclosed. According to one embodiment, a multi-wavelength light detector includes a pixel set composed of a plurality of pixels that absorb incident light according to wavelengths; a plurality of pixel transistors coupled to a lower portion of the pixel set and generating an electrical signal for light absorbed by each of the plurality of pixels for each wavelength; and an integrated circuit device that implements an image by processing electrical signals for light absorbed by each of the plurality of pixels for each wavelength.

Description

Multi-wavelength photodetector and hyperspectral imaging system using the same {MULTI-COLOR PHOTODETECTOR AND HYPERSPECTRAL IMAGING SYSTEM USING THE SAME}

The following embodiments relate to a hyperspectral imaging system, and more specifically, to a technology for a multi-wavelength photodetector and a hyperspectral imaging system using the same.

Unlike a multispectral imaging system that measures light at a limited broadband wavelength, a hyperspectral imaging system has hundreds to thousands of continuous channels and can measure light at wavelength intervals of approximately several nm or less.

However, the existing pixel set structure in which a plurality of pixels are arranged in the horizontal direction is not suitable for absorbing light of numerous different wavelengths due to limitations in horizontal integration, and also causes problems with high process complexity.

In addition, filters placed on top of existing pixels have a structure in which performance and variability are not compatible, so they have problems such as deterioration in performance or difficulties in miniaturization and integration in a fixed form.

In addition, the existing structure in which the capacitor is provided only in the integrated circuit element has a problem in that the noise temperature resolution characteristics of the photo detector are deteriorated because the charge integration capacity is not large.

Accordingly, there is a need to propose a multi-wavelength photodetector and a hyperspectral imaging system using the same that solve the above problems.

One embodiment is a multi-wavelength photodetector including a plurality of pixels implemented with low complexity to absorb light of countless different wavelengths, and a filter implemented in a variable form to enable miniaturization and integration while ensuring performance, and the same. We propose a hyperspectral imaging system using

In addition, embodiments propose a multi-wavelength photodetector that further includes an additional capacitor layer in addition to the capacitor provided in the integrated circuit device and a hyperspectral imaging system using the same in order to improve noise temperature resolution characteristics by increasing the charge integration capacity. .

However, the technical problems to be solved by the present invention are not limited to the above problems, and may be expanded in various ways without departing from the technical spirit and scope of the present invention.

According to one embodiment, a multi-wavelength light detector includes: a pixel set composed of a plurality of pixels that absorb incident light according to wavelength; a plurality of pixel transistors coupled to a lower portion of the pixel set and generating an electrical signal for light absorbed by each of the plurality of pixels for each wavelength; and an integrated circuit device that implements an image by processing electrical signals for light absorbed by each of the plurality of pixels for each wavelength.

According to one side, the pixel set, the plurality of pixel transistors, and the integrated circuit device may have a monolithically stacked structure.

According to another aspect, the multi-wavelength photo detector may further include a capacitor layer disposed between the integrated circuit element and the plurality of pixel transistors.

According to another aspect, a plurality of pixels constituting the pixel set may share the capacitor layer.

According to another aspect, the capacitor layer includes: a first metal layer disposed opposite to the integrated circuit element; a second metal layer disposed opposite the plurality of pixel transistors; and an insulating layer disposed between the first metal layer and the second metal layer.

According to another aspect, the first metal layer and the second metal layer may be electrically connected to the integrated circuit element.

According to another aspect, the multi-wavelength photo detector may include a plurality of each of the pixel set, the plurality of pixel transistors, and the capacitor layer in a horizontal direction to form a multi-wavelength photo detector array. .

According to another aspect, each of the plurality of pixel sets, the plurality of pixel transistors, and the capacitor layer may share the integrated circuit element.

According to another aspect, the multi-wavelength photodetector array may be used as a hyperspectral imaging system.

According to another aspect, the multi-wavelength light detector may further include a plurality of nanostructure surface filters each disposed on top of a plurality of pixels constituting the pixel set.

According to another aspect, the plurality of pixels may be stacked in a vertical direction and have different sizes such that at least a portion of the area is exposed in each of the plurality of pixels.

According to another aspect, each of the plurality of nanostructured surface filters may be disposed on an upper portion of at least a portion of the area exposed by each of the plurality of pixels.

According to another aspect, the plurality of nanostructured surface filters may have different periods or shapes to absorb different wavelengths.

According to one embodiment, a method of manufacturing a multi-wavelength light detector includes preparing an integrated circuit device that implements an image by processing an electrical signal for light absorbed by each wavelength of a plurality of pixels; forming a plurality of pixel transistors on the integrated circuit device to generate an electrical signal for light absorbed by each of the plurality of pixels for each wavelength; and forming a pixel set composed of the plurality of pixels that absorb incident light according to wavelength on the plurality of pixel transistors.

According to one side, forming the plurality of pixel transistors and forming the pixel set may include forming the plurality of integrated circuit elements, the plurality of pixel transistors, and the pixel set to have a monolithically stacked structure. It may be characterized as a step of forming pixel transistors and the pixel set.

According to another aspect, the step of preparing the integrated circuit device may further include forming a capacitor layer disposed between the integrated circuit device and the plurality of pixel transistors.

According to another aspect, forming the pixel set may further include forming a plurality of nanostructured surface filters each disposed on top of a plurality of pixels constituting the pixel set. .

One embodiment is a multi-wavelength photodetector including a plurality of pixels implemented with low complexity to absorb light of countless different wavelengths, and a filter implemented in a variable form to enable miniaturization and integration while ensuring performance, and the same. A hyperspectral imaging system using

In addition, one embodiment proposes a multi-wavelength photodetector further including an additional capacitor layer in addition to the capacitor provided in the integrated circuit device and a hyperspectral imaging system using the same in order to improve noise temperature resolution characteristics by increasing the charge integration capacity. You can.

However, the effects of the present invention are not limited to the above effects, and may be expanded in various ways without departing from the technical spirit and scope of the present invention.

Figure 1 is a cross-sectional view showing a multi-wavelength photodetector according to an embodiment.
FIG. 2 is a perspective view illustrating a set of pixels included in the multi-wavelength photodetector shown in FIG. 1.
FIG. 3 is a scanning electron microscope (SEM) photograph showing nanostructure filters included in the multi-wavelength light detector shown in FIG. 1.
FIG. 4 is a plan view showing various patterns of nanostructure filters included in the multi-wavelength light detector shown in FIG. 1.
FIG. 5 is a perspective view showing a multi-wavelength photo detector array comprised of the multi-wavelength photo detector shown in FIG. 1.
FIG. 6 is a circuit diagram illustrating a structure in which a capacitor layer and an integrated circuit element are shared in the multi-wavelength photodetector array shown in FIG. 5.
Figure 7 is a flow chart showing a method of manufacturing a multi-wavelength photo detector according to an embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. However, the present invention is not limited or limited by the examples. Additionally, the same reference numerals in each drawing indicate the same members.

Additionally, terminologies used in this specification are terms used to appropriately express preferred embodiments of the present invention, and may vary depending on the intention of the viewer, operator, or customs in the field to which the present invention belongs. Therefore, definitions of these terms should be made based on the content throughout this specification. For example, in this specification, singular forms also include plural forms unless specifically stated otherwise in the context. Additionally, as used herein, “comprises” and/or “comprising” refers to a referenced component, step, operation, and/or element that includes one or more other components, steps, operations, and/or elements. It does not exclude the presence or addition of elements.

Additionally, it should be understood that the various embodiments of the present invention are different from one another but are not necessarily mutually exclusive. For example, specific shapes, structures and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention with respect to one embodiment. Additionally, it should be understood that the location, arrangement, or configuration of individual components in each presented embodiment category may be changed without departing from the technical spirit and scope of the present invention.

FIG. 1 is a cross-sectional view showing a multi-wavelength photo detector according to an embodiment, FIG. 2 is a perspective view illustrating a pixel set included in the multi-wavelength photo detector shown in FIG. 1, and FIG. 3 is a multi-wavelength photo detector shown in FIG. 1. It is a scanning electron microscope (SEM) photograph showing nanostructure filters included in the wavelength light detector, and FIG. 4 is a plan view showing various patterns of nanostructure filters included in the multi-wavelength light detector shown in FIG. 1.

Referring to FIG. 1, a multi-wavelength photodetector 100 according to one embodiment may include a pixel set 110, a plurality of pixel transistors 120, a capacitor layer 130, and an integrated circuit element 140. there is.

The pixel set 110 may be composed of a plurality of pixels 111 and 112 that absorb incident light according to wavelength. Here, each of the plurality of pixels 111 and 112 represents a photodiode (PD) and may include an active element (not shown) to absorb incident light and generate electrical energy.

In particular, the plurality of pixels 111 and 112 included in the pixel set 110 may be stacked vertically, unlike the existing structure in which the pixels 111 and 112 are arranged horizontally. Accordingly, the pixel set 110 can be implemented to promote integration and at the same time increase the number of stacked pixels 111 and 112 to absorb light of countless wavelengths and enable high resolution.

In this way, each of the plurality of pixels 111 and 112 stacked in the vertical direction may have a structure in which at least a portion of the area is exposed to absorb incident light according to wavelength. That is, the plurality of pixels 111 and 112 are formed in different sizes so that at least a partial area is exposed as shown in FIG. 2, so that each of the pixels 111 and 112 can absorb incident light by wavelength through at least a partial area exposed. . Accordingly, at least a portion of the area exposed from each of the plurality of pixels 111 and 112 may form a staircase shape when viewed from the side.

At this time, a plurality of nanostructured surface filters 113 and 114 may be disposed on top of the plurality of pixels 111 and 112 constituting the pixel set 110 (more precisely, a plurality of nanostructures The surface filters 113 and 114 may be disposed on at least a portion of the area exposed by each of the plurality of pixels 111 and 112. For example, the plurality of nanostructured surface filters 113 and 114 may be formed to have a pattern of several nanometers or less as shown in FIG. 3 in order to distinguish and absorb wavelengths of several nanometers or less, respectively. It can be formed through various processes to ensure flexibility. Hereinafter, the plurality of nanostructured surface filters 113 and 114 are shown as one layer for convenience in FIG. 1, but in reality, they are formed on top of the plurality of pixels 111 and 112, respectively, as shown in FIG. 2, so they are plural. It can exist separately in each of the layers.

Each of the plurality of nanostructured surface filters 113 and 114 is capable of selectively transmitting light of a preset wavelength from incident light, and each of the plurality of pixels 111 and 112 is arranged based on the wavelength to be absorbed. It can be. For example, the first nanostructure surface filter 113 is formed to absorb light in the visible band and may be placed on top of the first pixel 111 to absorb light in the visible band. 2 The nanostructured surface filter 114 is formed to absorb light in the near-infrared band and may be placed on top of the second pixel 112 to absorb light in the near-infrared band.

As such, the plurality of nanostructure surface filters 113 and 114 may have different periods or shapes in order to have different absorption wavelengths. Here, the period refers to the interval between repeated parts in the pattern of the nanostructured surface filter, and the shape may refer to the shape of the pattern or the shape of the repeated part of the pattern.

The patterns of each of the plurality of nanostructured surface filters 113 and 114 described above are not limited or limited to the example shown in FIG. 3, and may be set in various ways as shown in FIG. 4.

In addition, the number of stacks and absorption wavelengths of the plurality of pixels 111 and 112 constituting the ideal pixel set 110 are not limited or limited to the examples described, and incident light of various wavelengths is absorbed to implement hyperspectral imaging. It can be adjusted to do so.

In the pixel set 110 having this structure, a plurality of pixels 111 and 112 may share the capacitor layer 130. A detailed description of this will be described with reference to FIG. 6.

The plurality of pixel transistors 120 may be coupled to the lower portion of the pixel set 110 and generate electrical signals for light absorbed by each of the plurality of pixels 111 and 112 for each wavelength. In more detail, the plurality of pixel transistors 120 are formed to correspond to the plurality of pixels 111 and 112 constituting the pixel set 110, and each has a source and drain region, a channel region, and a gate region. It may have a transistor structure including. For example, the plurality of pixel transistors 120 are implemented in the same number as the number of pixels 111 and 112 constituting the pixel set 110, and each of the plurality of pixels 111 and 112 Can be electrically connected to each. Accordingly, the electrical energy generated by each of the plurality of pixels 111 and 112 by absorbing incident light may be output in the form of an electrical signal by each of the plurality of pixel transistors 120. For example, the first pixel transistor 121 may be electrically connected to the first pixel 111 to generate an electrical signal based on incident light of the wavelength absorbed by the first pixel 111, and the second pixel transistor 121 may be electrically connected to the first pixel 111. By being electrically connected to the second pixel 112 , 122 can generate an electrical signal based on incident light of a wavelength absorbed by the second pixel 112 .

In particular, the plurality of pixel transistors 120 can be formed into a thin film structure through channel layer transfer, thereby promoting miniaturization and integration of the multi-wavelength photo detector 100.

The capacitor layer 130 may be disposed between the integrated circuit device 140 and the plurality of pixel transistors 120. This capacitor layer 130 is electrically connected to the plurality of pixel transistors 120 and the integrated circuit device 140, thereby providing additional capacitance in addition to the capacitor included in the integrated circuit device 140. To this end, the capacitor layer 130 includes a first metal layer 131 disposed opposite the integrated circuit element 140, a second metal layer 132 disposed opposite the plurality of pixel transistors 120, and a first metal layer. It may include an insulating layer 133 disposed between (131) and the second metal layer (132). The capacitor layer 130 may be electrically connected to the integrated circuit element 140 through the first metal layer 131 and the second metal layer 132.

Here, the additional capacitance provided by the capacitor layer 130 may be determined based on the area and thickness of the capacitor layer 130. For example, the additional capacitance is the area where the first metal layer 131 and the second metal layer 132 overlap each other, and the distance between the first metal layer 131 and the second metal layer 132 by the insulating layer 133. It can be decided based on

Although not shown in the drawing, the capacitor layer 130 includes a first protective layer (not shown), a second protective layer (not shown) that electrically connects only a portion of the first metal layer 131 to the integrated circuit element 140 and insulates the remaining portions. A second protective layer (not shown) that allows only a portion of the metal layer 132 to be electrically connected to the plurality of pixel transistors 120 and insulates the remaining portions, and the first metal layer 131 is connected to the integrated circuit element 140. It may further include a first bonding layer (not shown) for bonding and a second bonding layer (not shown) for bonding the second metal layer 132 to the plurality of pixel transistors 120 .

As the capacitor layer 130 provides additional capacitance, the capacitance capacity of the planar structure can be overcome and the charge integration capacity can be increased to improve noise temperature resolution characteristics.

The integrated circuit (IC) device 140 may implement an image by processing electrical signals for light absorbed by each of the plurality of pixels 111 and 112 for each wavelength. In more detail, the integrated circuit element 140 is configured to include a signal acquisition circuit (read-out integrated circuit; ROIC) (not shown), thereby processing the electrical signals output from the plurality of pixel transistors 120 to create an image. can be implemented. Additionally, the integrated circuit device 140 may include an internal capacitor (not shown) to provide capacitance in addition to the capacitor layer 130.

The multi-wavelength photodetector 100 including such a pixel set 110, a plurality of pixel transistors 120, a capacitor layer 130, and an integrated circuit element 140 has a monolithically stacked structure (hereinafter referred to as , the monolithically laminated structure may be characterized as having an integrated laminated structure using a monolithic method. To this end, the pixel set 110, the plurality of pixel transistors 120, the capacitor layer 130, and the integrated circuit device 140 may each have similar or identical cross-sectional sizes and areas.

The multi-wavelength photo detector 100 described above can be provided in a plurality in the horizontal direction to form a multi-wavelength photo detector array. A detailed description of this will be described with reference to FIG. 5.

FIG. 5 is a perspective view showing a multi-wavelength photo detector array composed of the multi-wavelength photo detector shown in FIG. 1, and FIG. 6 shows a structure in which the capacitor layer and integrated circuit elements are shared in the multi-wavelength photo detector array shown in FIG. 5. This is a circuit diagram for explanation.

Referring to FIGS. 5 and 6 , the multi-wavelength photo detector array 500 may be implemented by providing a plurality of the multi-wavelength photo detectors 100 described with reference to FIGS. 1 to 4 in the horizontal direction. Here, the plurality of multi-wavelength photo detectors 510 and 520 provided in the horizontal direction may be configured to absorb incident light of different wavelengths. For example, the pixel set 511 included in the first multi-wavelength photo detector 510 may be configured to absorb incident light of the first and second wavelengths, and may be configured to absorb incident light of the first and second wavelengths, and may be connected to the second multi-wavelength photo detector 520. The included pixel set 521 may be configured to absorb incident light of the third and fourth wavelengths.

In particular, the plurality of multi-wavelength photo detectors 510 and 520 provided in the horizontal direction include a pixel set 511 and 521 excluding the integrated circuit element 530, a plurality of pixel transistors 512 and 522, and a capacitor layer. Only (513, 523) means that a plurality of each is provided in the horizontal direction. Accordingly, within the multi-wavelength photo detector array 500, a plurality of multi-wavelength photo detectors 510 and 520 share the integrated circuit element 530 (more precisely, a plurality of multi-wavelength photo detectors 510 and 520). (pixel sets 511, 512, a plurality of pixel transistors 512, 522, and capacitor layers 513, 523 share the integrated circuit element 530), and a multi-wavelength photodetector array 500. ) can promote miniaturization and integration.

At this time, a plurality of pixels constituting the pixel sets 511 and 512 within the multi-wavelength photo detectors 510 and 520 may share the capacitor layers 513 and 523. Accordingly, the multi-wavelength photodetectors 510 and 520 can also achieve miniaturization and integration while improving noise temperature resolution characteristics by overcoming the capacitance capacity of the planar structure and increasing the charge integration capacity.

Such a multi-wavelength photodetector array 500 can be used as a hyperspectral imaging system, but is not limited or limited thereto, and the multi-wavelength photodetectors 510 and 520 that do not constitute an array can also be used independently as a hyperspectral imaging system. It may be possible. In this case, the number of pixels constituting the pixel sets 511 and 521 of the multi-wavelength photo detectors 510 and 520 is determined by the number of pixels within the multi-wavelength photo detector array 500 (510 and 520). It may be greater than the number of pixels constituting each pixel set 511 and 521.

Figure 7 is a flow chart showing a method of manufacturing a multi-wavelength photodetector according to an embodiment. Hereinafter, the manufacturing method described is assumed to be performed according to common semiconductor manufacturing techniques by an automated and mechanized manufacturing system, and as a result of performing the manufacturing method, the multi-wavelength photodetector (100) described with reference to FIGS. 1 to 4 ) can be manufactured. Therefore, in the following manufacturing method, it is clear that the multi-wavelength photo detector 100 is manufactured even if the detailed processes of forming the components constituting the multi-wavelength photo detector 100 are not directly described. It is obvious that it includes them.

Likewise, the multi-wavelength photodetector array 500 described with reference to FIGS. 5 and 6 may also be manufactured through a manufacturing method similar to or identical to the manufacturing method described later.

Referring to FIG. 7 , in step S710, the manufacturing system may prepare an integrated circuit device that implements an image by processing electrical signals for light absorbed by each of the plurality of pixels for each wavelength.

At this time, although not shown as a separate step, the manufacturing system may form a capacitor layer to be disposed between the integrated circuit device and the plurality of pixel transistors on the integrated circuit device in step S710.

Next, in step S720, the manufacturing system may form a plurality of pixel transistors on the integrated circuit device that generate electrical signals for light absorbed by each wavelength. More specifically, the manufacturing system can form a plurality of pixel transistors on top of a capacitor layer disposed on an integrated circuit device as described above.

Thereafter, in step S730, the manufacturing system may form a pixel set composed of a plurality of pixels that absorb incident light according to wavelength on a plurality of pixel transistors.

Although not shown as a separate step, the manufacturing system may form a plurality of nanostructured surface filters each disposed on top of a plurality of pixels constituting the pixel set in step S730.

In particular, in steps S720 to S730, the manufacturing system fabricates a plurality of pixels on the integrated circuit device using a monolithic method so that the integrated circuit device, a plurality of pixel transistors, and a pixel set have a monolithically stacked structure. Transistors and pixel sets can be formed in an integrated stacked structure.

The various embodiments of this document and the terms used herein are not intended to limit the technology described in this document to a specific embodiment, and should be understood to include various changes, equivalents, and/or replacements of the embodiments. In connection with the description of the drawings, similar reference numbers may be used for similar components. Singular expressions may include plural expressions, unless the context clearly dictates otherwise. In this document, expressions such as “A or B”, “at least one of A and/or B”, “A, B or C” or “at least one of A, B and/or C” refer to all of the items listed together. Possible combinations may be included. Expressions such as "first", "second", "first" or "second" can modify the corresponding components regardless of order or importance, and are only used to distinguish one component from another component. The components are not limited. When a component (e.g. a first) component is said to be "connected (functionally or communicatively)" or "connected" to another (e.g. a second) component, it means that the component is connected to the other component. It may be connected directly to a component or may be connected through another component (e.g., a third component).

According to various embodiments, each component (eg, module or program) of the described components may include a single entity or a plurality of entities. According to various embodiments, one or more of the components or operations described above may be omitted, or one or more other components or operations may be added. Alternatively or additionally, multiple components (eg, modules or programs) may be integrated into a single component. In this case, the integrated component may perform one or more functions of each of the plurality of components in the same or similar manner as that performed by the corresponding component among the plurality of components prior to integration. According to various embodiments, operations performed by a module, program, or other component may be executed sequentially, in parallel, iteratively, or heuristically, or one or more of the operations may be executed in a different order, omitted, or , or one or more other operations may be added.

Claims (17)

In a multi-wavelength photodetector,
a pixel set consisting of a plurality of pixels that absorb incident light according to wavelength;
a plurality of pixel transistors coupled to a lower portion of the pixel set and generating an electrical signal for light absorbed by each of the plurality of pixels for each wavelength;
an integrated circuit device that implements an image by processing electrical signals for light absorbed by each of the plurality of pixels for each wavelength; and
A capacitor layer disposed between the integrated circuit element and the plurality of pixel transistors and shared by the plurality of pixels, wherein the capacitor layer includes a first metal layer disposed opposite the integrated circuit element, the plurality of comprising a second metal layer disposed opposite the pixel transistors and an insulating layer disposed between the first metal layer and the second metal layer -
Including,
The area where the first metal layer and the second metal layer overlap each other, and the distance between the first metal layer and the second metal layer by the insulating layer are,
Characterized in that it is determined based on the additional capacitance provided by the capacitor layer,
The plurality of pixels are,
A multi-wavelength light detector, wherein each of the plurality of pixels is stacked in a vertical direction and has different sizes so that at least a portion of the area is exposed toward the light incident direction.
According to paragraph 1,
The pixel set, the plurality of pixel transistors, and the integrated circuit device include:
A multi-wavelength photodetector characterized by having a monolithically stacked structure.
delete delete delete According to paragraph 1,
The first metal layer and the second metal layer are,
A multi-wavelength photodetector, characterized in that it is electrically connected to the integrated circuit element.
According to paragraph 1,
The multi-wavelength photodetector,
A multi-wavelength photodetector comprising a plurality of the pixel set, the plurality of pixel transistors, and the capacitor layer, each in a horizontal direction, to form a multi-wavelength photodetector array.
In clause 7,
Each of the plurality of pixel sets, the plurality of pixel transistors, and the capacitor layer,
A multi-wavelength photodetector, characterized in that it shares the integrated circuit element.
In clause 7,
The multi-wavelength photodetector array,
A multi-wavelength photodetector characterized for use as a hyperspectral imaging system.
According to paragraph 1,
A plurality of nanostructure surface filters each disposed on top of the plurality of pixels
A multi-wavelength photodetector further comprising:
delete According to clause 10,
Each of the plurality of nanostructured surface filters,
A multi-wavelength photo detector disposed on top of at least a portion of the area exposed by each of the plurality of pixels.
According to clause 10,
The plurality of nanostructured surface filters,
A multi-wavelength photodetector characterized by having different periods or shapes to absorb different wavelengths.
In a method of manufacturing a multi-wavelength photodetector,
Preparing an integrated circuit device that implements an image by processing electrical signals for light absorbed by each of a plurality of pixels for each wavelength;
forming a plurality of pixel transistors on the integrated circuit device to generate an electrical signal for light absorbed by each of the plurality of pixels for each wavelength; and
Forming a pixel set composed of the plurality of pixels that absorb incident light according to wavelength on the plurality of pixel transistors.
Including,
The preparation step is,
A capacitor layer disposed between the integrated circuit element and the plurality of pixel transistors and shared by the plurality of pixels, wherein the capacitor layer includes a first metal layer disposed opposite the integrated circuit element, the plurality of forming a second metal layer disposed opposite the pixel transistors and an insulating layer disposed between the first metal layer and the second metal layer;
Includes,
The area where the first metal layer and the second metal layer overlap each other, and the distance between the first metal layer and the second metal layer by the insulating layer are,
Characterized in that it is determined based on the additional capacitance provided by the capacitor layer,
The plurality of pixels are,
A method of manufacturing a multi-wavelength photodetector, wherein each of the plurality of pixels is stacked in a vertical direction and has different sizes so that at least a portion of the area is exposed toward the light incident direction.
According to clause 14,
Forming the plurality of pixel transistors and forming the pixel set include:
Manufacturing a multi-wavelength photodetector, characterized in that forming the integrated circuit device, the plurality of pixel transistors, and the pixel set so that the plurality of pixel transistors and the pixel set have a monolithically stacked structure. method.
delete According to clause 14,
The step of forming the pixel set is,
Forming a plurality of nanostructured surface filters each disposed on top of a plurality of pixels constituting the pixel set.
A method of manufacturing a multi-wavelength photodetector further comprising: