KR102572960B1 - Polishing pad including a plurality of pattern structures - Google Patents

Abstract

The present application relates to a polishing pad including a plurality of patterned structures.

Description

A polishing pad including a plurality of pattern structures

The present application relates to a polishing pad including a plurality of patterned structures.

During the semiconductor manufacturing process, chemical mechanical polishing (CMP) processes are used to planarize individual layers (dielectric or metal layers) during the manufacture of integrated circuits on semiconductor wafers. In the CMP, a wafer is attached to a head and the wafer is brought into contact with the surface of a polishing pad formed on a platen, and the platen and the head are chemically reacted by supplying slurry to the surface of the platen. It is a process of mechanically flattening the concavo-convex part of the wafer surface by relative motion. The CMP usually uses a combination of a reactive liquid medium and a polishing pad surface to provide adequate mechanical and chemical control to achieve planarization.

The CMP polishing process should be able to predict the polishing characteristics, and the difference in polishing performance between products and according to the process time should be small. However, conventional CMP polishing pads have open irregular pores or have an irregular pattern structure, making it difficult to predict polishing properties. There was a problem that it was not easy to adjust (KR 20-0247042 Y1).

The present application provides a polishing pad including a plurality of patterned structures to solve the above problems.

However, the problem to be solved by the present application is not limited to the above-mentioned problem, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

A first aspect of the present application is a polishing pad including a plurality of pattern structures, wherein the polishing pad includes an upper pad and a lower pad, and the plurality of pattern structures are continuously formed on the surface of the upper pad, polishing provide pads.

In the polishing pad according to embodiments of the present application, the polishing pad including a plurality of pattern structures includes grooves on the surface of the upper pad, and the shapes of the grooves and the size and size of the pattern structures having an optimal range It is characterized in that the polishing effect (polishing flatness and removal rate) can be improved due to the optimal combination of spacing.

In the polishing pad according to embodiments of the present disclosure, the polishing pad including a plurality of pattern structures has an optimal range of hardness, tensile strength, tear strength, NCO%, and elongation of the upper layer pad including the plurality of pattern structures. As a result, the polishing effect (polishing flatness and removal rate) is improved.

According to the embodiments of the present application, when the plurality of pattern structures are formed in an embossed pattern, the polishing effect (polishing flatness and removal rate) may be further improved.

1 is a photograph showing the shapes of patterns (Pattern-60, Pattern-50, Pattern-35, and Pattern-25) of various sizes of a plurality of pattern structures according to an embodiment of the present application.
Figure 2, in one embodiment of the present application, shows the shape of the intaglio and relief of a plurality of pattern structures of various shapes.
3 illustrates intervals between pattern structures of Pattern-60, Pattern-50, Pattern-35, and Pattern-25 according to an embodiment of the present disclosure.
4A is a diagram illustrating various groove shapes and arrangements of various micropatterns according to an embodiment of the present disclosure.
4B shows the shapes of groove A (concentric groove with a pitch of about 3 mm), groove B (concentric groove with a pitch of about 2 mm), and groove C (groove processed in a square (grid shape)) among various groove shapes. is the drawing shown.
Figure 5. In one embodiment of the present application, it is a graph showing removal rates of polishing pads each including Pattern-60, Pattern-50, Pattern-35, and Pattern-25 in groove A.
FIG. 6 is a graph showing average values of removal rates of polishing pads each including Pattern-60, Pattern-50, Pattern-35, and Pattern-25 in groove A according to an embodiment of the present disclosure.
FIG. 7 illustrates wafer polishing flatness of a polishing pad each including Pattern-60, Pattern-50, Pattern-35, and Pattern-25 in groove A according to one embodiment of the present disclosure.
FIG. 8 is a graph showing removal rates of polishing pads each including Pattern-35 and Pattern-25 in grooves B and C in accordance with one embodiment of the present disclosure.
FIG. 9 is a graph showing average removal rates of polishing pads each including Pattern-35 and Pattern-25 in grooves B and C in accordance with one embodiment of the present disclosure.
10 illustrates wafer polishing flatness of a polishing pad including Pattern-25 and Pattern-35 in groove B and groove C, respectively, according to an embodiment of the present disclosure.
11 shows densities of Pattern-60, Pattern-50, Pattern-35, and Pattern-25 according to an embodiment of the present disclosure.
12 is a graph showing removal rates of polishing pads using prepolymer-1, prepolymer-2, prepolymer-3, prepolymer-4, prepolymer-5, and prepolymer-6, respectively, according to an embodiment of the present disclosure.
13 is a graph showing average values of removal rates of polishing pads using prepolymer-1, prepolymer-2, prepolymer-3, prepolymer-4, prepolymer-5, and prepolymer-6, respectively, according to an embodiment of the present disclosure.
14 illustrates wafer polishing flatness of polishing pads using prepolymer-1, prepolymer-2, prepolymer-3, prepolymer-4, prepolymer-5, and prepolymer-6, respectively, according to an embodiment of the present disclosure.

Hereinafter, with reference to the accompanying drawings, embodiments and embodiments of the present application will be described in detail so that those skilled in the art can easily practice the present invention. However, the present disclosure may be embodied in many different forms and is not limited to the implementations and examples described herein. And in order to clearly explain the present invention in the drawings, parts irrelevant to the description are omitted, and similar reference numerals are attached to similar parts throughout the specification.

Throughout this specification, when a part is said to be "connected" to another part, this includes not only the case of being "directly connected" but also the case of being "electrically connected" with another element in between. do.

Throughout the present specification, when a member is said to be located “on” another member, this includes not only a case where a member is in contact with another member, but also a case where another member exists between the two members.

Throughout the present specification, when a certain component is said to "include", it means that it may further include other components without excluding other components unless otherwise stated.

As used herein, the terms "about," "substantially," and the like are used at or approximating that number when manufacturing and material tolerances inherent in the stated meaning are given, and are intended to assist in the understanding of this disclosure. Accurate or absolute figures are used to prevent undue exploitation by unscrupulous infringers of the stated disclosure.

The term "step of" or "step of" used throughout the present specification does not mean "step for".

Throughout this specification, the term "combination(s) of these" included in the expression of the Markush form means one or more mixtures or combinations selected from the group consisting of the components described in the expression of the Markush form, It means including one or more selected from the group consisting of the above components.

Throughout this specification, reference to "A and/or B" means "A or B, or A and B".

Throughout the present specification, "polishing flatness" means a value obtained by dividing the average of the removal rates of patterned structures by the standard deviation.

Throughout the present specification, “pitch” means the sum of the lengths of concave portions and portions in which no concave portions are formed, and has a periodic nature.

Throughout the present specification, "tensile strength" refers to strength that is broken by pulling up and down in the process of using a material.

Throughout this specification, “tear strength” refers to the strength of a material to resist tearing along a torn or damaged location during use.

Throughout the present specification, "NCO%" means the weight% of NCO contained in an isocyanate sample.

Throughout the present specification, "elongation" means a numerical value expressed as a percentage of the elongation rate of a sample in a tensile test.

Hereinafter, embodiments of the present application have been described in detail, but the present application may not be limited thereto.

A first aspect of the present application is a polishing pad including a plurality of pattern structures, wherein the polishing pad includes an upper pad and a lower pad, and the plurality of pattern structures are continuously formed on the surface of the upper pad, polishing provide pads.

In one embodiment of the present application, in the plurality of pattern structures, a concave portion may be formed between each pattern structure.

In one embodiment of the present application, as the value of the wafer polishing flatness (Non uniformity) of the plurality of pattern structures is smaller, a flatter wafer can be obtained, and the polishing flatness is uniformly polished throughout the polishing pad. As a criterion for determining whether or not it can be done, it means a value obtained by dividing the average of the removal rates of the pattern structures by the standard deviation.

In one embodiment of the present application, the upper layer pad including the plurality of pattern structures may have a hardness of about 40 Shore D to about 80 Shore D, but is not limited thereto. Specifically, the hardness of the upper layer pad including the plurality of pattern structures is about 40 shore D to about 80 shore D, about 40 shore D to about 75 shore D, about 40 shore D to about 70 shore D, about 50 shore D to about 80 Shore D, about 50 Shore D to about 75 Shore D, about 50 Shore D to about 70 Shore D, about 60 Shore D to about 80 Shore D, about 60 Shore D to about 75 Shore D, about 60 Shore D to about 70 shore D or about 64 shore D to about 69 shore D, but is not limited thereto. When the hardness of the upper layer pad including the plurality of pattern structures is greater than about 80 Shore D, it may cause scratches or defects on the surface of the wafer, and when it is less than about 40 Shore D, it may be vulnerable to mold retention and wear of the wafer, When the hardness of the upper layer pad is greater than about 80 Shore D and less than about 40 Shore D, it is not suitable for polishing.

In one embodiment of the present application, the tensile strength of the upper layer pad including the plurality of pattern structures may be about 30 MPa to about 60 MPa, but is not limited thereto. Specifically, the tensile strength of the upper layer pad including the plurality of patterned structures is about 30 MPa to about 60 MPa, about 30 MPa to about 58 MPa, about 30 MPa to about 56 MPa, about 35 MPa to about 60 MPa, about 35 MPa MPa to about 58 MPa, about 35 MPa to about 56 MPa, about 40 MPa to about 60 MPa, about 40 MPa to about 58 MPa, about 40 MPa to about 56 MPa, about 45 MPa to about 60 MPa, about 45 MPa to It may be about 58 MPa, about 45 MPa to about 56 MPa, or about 45 MPa to about 46 MPa, but is not limited thereto. When the tensile strength of the upper layer pad including the plurality of pattern structures is greater than about 60 MPa, it may cause scratches or defects on the surface of the wafer, or when it is less than about 30 MPa, it may be vulnerable to wear and tear of the wafer, When the tensile strength of the upper layer pad is greater than about 60 MPa or less than about 30 MPa, it is not suitable for polishing.

In one embodiment of the present application, the tear strength of the upper layer pad including the plurality of pattern structures may be about 10 N/mm to about 45 N/mm, but is not limited thereto. Specifically, the tear strength of the upper layer pad including the plurality of patterned structures is about 10 N/mm to about 45 N/mm, about 10 N/mm to about 44 N/mm, about 10 N/mm to about 43 N /mm, about 10 N/mm to about 42 N/mm, about 30 N/mm to about 45 N/mm, about 30 N/mm to about 44 N/mm, about 30 N/mm to about 43 N/mm , about 30 N/mm to about 42 N/mm, about 35 N/mm to about 45 N/mm, about 35 N/mm to about 44 N/mm, about 35 N/mm to about 43 N/mm about 35 N/mm to about 42 N/mm or about 37 N/mm to about 42 N/mm, but is not limited thereto. When the tear strength of the upper layer pad including the plurality of pattern structures exceeds about 45 N/mm, it may cause scratches or defects on the surface of the wafer, or when it is less than about 10 N/mm, the wafer is vulnerable to mold retention and wear. However, when the tear strength of the upper layer pad is greater than about 45 N/mm or less than about 10 N/mm, it is not suitable for polishing.

In one embodiment of the present application, NCO% of the upper layer pad including the plurality of pattern structures may be about 2% to about 15%, but is not limited thereto. Specifically, the NCO% of the upper layer pad including the plurality of patterned structures is about 2% to about 15%, about 2% to about 14%, about 2% to about 13%, about 2% to about 12%, about 2% to about 11%, about 2% to about 10%, about 2% to about 9%, about 5% to about 15%, about 5% to about 14%, about 5% to about 13%, about 5% to about 12%, about 5% to about 11%, about 5% to about 10%, about 5% to about 9%, about 7% to about 15%, about 7% to about 14%, about 7% to about 13%, about 7% to about 12%, about 7% to about 11%, about 7% to about 10%, about 7% to about 9%, or 7.7% to about 8.6%, but is not limited thereto. When the NCO% of the upper layer pad including the plurality of pattern structures is greater than about 15%, it may cause scratches or defects on the surface of the wafer, or when it is less than 2%, it may be vulnerable to wear and tear of the wafer. When the NCO% of the upper pad is greater than about 15% or less than 2%, it is not suitable for polishing.

In one embodiment of the present application, the elongation of the upper layer pad including the plurality of pattern structures may be about 200% to about 550%, but is not limited thereto. Specifically, the elongation of the upper layer pad including the plurality of pattern structures is about 200% to about 550%, about 200% to about 500%, about 200% to about 450%, about 200% to about 400%, about 200% to about 350%, about 200% to about 300%, about 250% to about 550%, about 250% to about 500%, about 250% to about 450%, about 250% to about 400%, about 250% to about 350% may be about 250% to about 300% or about 280% to about 300%, but is not limited thereto. More specifically, when the elongation of the upper layer pad including the plurality of pattern structures exceeds about 550%, it may cause scratches or defects on the surface of the wafer, or when it is less than 200%, it may be vulnerable to wear and tear of the wafer. However, when the elongation of the upper layer pad is more than 550% or less than 200%, it is not suitable for polishing.

In one embodiment of the present application, the size of the plurality of pattern structures may be about 10 μm to about 100 μm, but is not limited thereto. Specifically, the size of the plurality of pattern structures is about 10 μm to about 100 μm, about 10 μm to about 90 μm, about 10 μm to about 80 μm, about 10 μm to about 70 μm, about 10 μm to about 60 μm , about 20 μm to about 100 μm, about 20 μm to about 90 μm, about 20 μm to about 80 μm, about 20 μm to about 70 μm, or about 20 μm to about 60 μm, but is not limited thereto. . When the size of the plurality of pattern structures exceeds about 100 μm, the polishing effect is reduced due to the decrease in the density of the pattern structures, and when the size of the plurality of pattern structures is less than about 10 μm, the density of the pattern structures increases too much, making manufacturing difficult. It is difficult and has the disadvantage of reducing the polishing effect.

In one embodiment of the present application, the concave portion formed between each pattern structure may have a width of about 1 μm to about 500 μm and a depth of the concave portion of about 1 μm to about 100 μm, but are limited thereto. It is not. Specifically, the width of the recess is about 1 μm to about 500 μm, about 1 μm to about 300 μm, about 1 μm to about 100 μm, about 1 μm to about 80 μm, about 1 μm to about 60 μm, about 1 μm to about 40 μm, about 1 μm to about 20 μm, about 5 μm to about 100 μm, about 5 μm to about 80 μm, about 5 μm to about 60 μm, about 5 μm to about 40 μm, about 5 μm to It may be about 20 μm or about 8 μm to about 15 μm, but is not limited thereto. In addition, in one embodiment of the present application, the depth of the concave portion is about 1 μm to about 100 μm, about 1 μm to about 80 μm, about 1 μm to about 60 μm, about 1 μm to about 40 μm, about 1 μm to about 40 μm It may be about 30 μm, about 10 μm to about 100 μm, about 10 μm to about 80 μm, about 10 μm to about 60 μm, about 10 μm to about 40 μm, or about 10 μm to about 30 μm, but is limited thereto. it is not going to be

Specifically, the prior art polishing pad has only grooves on the surface of several hundred μm and no micro-pattern structure is formed on the surface, but the polishing pad according to the present invention includes micro-pattern structures on the surface, and the concavity of the pattern structure The depth of the blowing is about 100 μm or less and is characterized by being formed in the range of several μm to several tens of μm. The polishing pad according to the present disclosure includes micro-sized pattern structures, and concave portions in the range of several μm to several tens of μm are formed between the pattern structures, thereby improving the uniformity of the polishing effect according to the product. The uniformity of the polishing effect can be improved. In addition, while commercial products of the prior art necessarily require a conditioning process (additional use of a conditioning disk) because there is a difference in polishing effect between products, the present application is the shape of the pattern structure of the polishing pad including the plurality of pattern structures, Since the uniformity of the polishing effect can be improved by adjusting the spacing and arrangement, there is an advantage in that a product having a desired performance can be manufactured even without a conditioning process.

In one embodiment of the present application, the pitch of the plurality of pattern structures may be from about 1 μm to about 1,000 μm, but is not limited thereto. Specifically, the pitch of the plurality of pattern structures is about 1 μm to about 1,000 μm, about 1 μm to about 500 μm, about 1 μm to about 250 μm, about 1 μm to about 125 μm, or about 1 μm to about 75 μm. It may be μm, but is not limited thereto. The pitch means the sum of the lengths of the concave portion and the portion where the concave portion is not formed, is greater than the size of the plurality of pattern structures, and has a periodic nature.

In one embodiment of the present application, the shape of the pattern structure may be selected from a circular shape, a polygonal shape, a cylindrical shape, a polygonal column shape, a cone shape, and a polygonal pyramid shape, and the polygonal shape is selected from polygonal shapes including triangular, quadrangular, pentagonal, and hexagonal shapes. It may be, but is not limited thereto.

In one embodiment of the present application, a groove may be additionally included on the surface of the upper layer pad, but is not limited thereto. The polishing pad according to the present disclosure may include a micro-pattern structure on a surface and simultaneously include grooves. In addition, it is also possible that grooves are not necessarily formed on the surface of the upper layer pad. Specifically, the groove may be formed on the entire surface of the upper layer pad on which a plurality of pattern structures are continuously formed, and the plurality of pattern structures may have an island-like shape due to the groove.

In one embodiment of the present application, the width of the groove is about 100 μm to about 1,000 μm, the depth of the groove is about 200 μm to about 1,500 μm, and the width and depth of the groove are compared to the concave portion between the pattern structures. may be large. Specifically, the width of the groove is about 100 μm to about 1,000 μm, about 100 μm to about 800 μm, about 100 μm to about 600 μm, about 100 μm to about 400 μm, about 200 μm to about 1,000 μm, about 200 μm μm to about 800 μm, about 200 μm to about 600 μm or about 200 μm to about 500 μm, and the depth of the groove is about 200 μm to about 1,500 μm, about 200 μm to about 1,000 μm, about 200 μm to about 800 μm μm, it may be about 200 μm to about 600 μm, 200 μm to about 500 μm, or about 200 μm to about 400 μm, but is not limited thereto. Also, the depth of the groove may be greater than the depth of the concave portion of the pattern structure.

The polishing pad according to the present invention is a polishing pad in which grooves are formed macroscopically by forming a micropattern structure having a depth of several μm to several tens of μm on the surface of the upper pad and at the same time forming grooves having a depth of hundreds of μm. It may be that micro-pattern structures are densely formed and regularly arranged on the entire surface. More specifically, on the surface of the upper pad, the micro-pattern structure may be formed in a space where the groove is not formed.

In one embodiment of the present application, the groove may have a pitch of about 1,000 μm to about 5,000 μm. Specifically, the groove has a pitch of about 1,000 μm to about 5,000 μm, about 1,000 μm to about 4,000 μm, about 1,000 μm to about 3,000 μm, about 1,000 μm to about 2,000 μm, about 2,000 μm to about 5,000 μm, about 2,000 μm It may be formed of μm to about 4,000 μm, or about 2,000 μm to about 3,000 μm, but is not limited thereto. Specifically, the pitch of the concentric grooves is about 1,000 μm to about 5,000 μm, about 1,000 μm to about 4,500 μm, about 1,000 μm to about 4,000 μm, about 1,000 μm to about 3,500 μm, about 1,000 μm to about 3,000 μm, about 1,500 μm to about 4,500 μm, about 1,500 μm to about 4,000 μm, about 1,500 μm to about 3,500 μm or about 1,500 μm to about 3,000 μm. The pitch of the lattice-like grooves is about 1,000 μm to about 5,000 μm, about 1,000 μm to about 4,500 μm, about 1,000 μm to about 4,000 μm, about 1,000 μm to about 3,500 μm, about 1,000 μm to about 3,000 μm, about 1,000 μm to about 2,500 μm or about 1,000 μm to about 2,000 μm. The pitch means the sum of the lengths of the groove and the non-groove and has a periodic nature.

In one embodiment of the present application, the shape of the groove may include one or more selected from lattice, circular, concentric, elliptical, fan-shaped, arcuate, spiral, stripe, radial, and oblique shapes, but is limited thereto. it is not going to be

In one embodiment of the present application, the dispersion form and dispersion rate of the polishing liquid may be controlled through the shape of the groove, but is not limited thereto.

In one embodiment of the present application, when the shape of the groove is lattice or concentric, the size of the plurality of pattern structures may be about 20 μm to about 70 μm, but is not limited thereto. When the shape of the groove is lattice or concentric, the size of the plurality of patterned structures is about 20 μm to about 70 μm, about 20 μm to about 68 μm, about 20 μm to about 66 μm, about 20 μm to about 64 μm , about 20 μm to about 62 μm, about 20 μm to about 60 μm, about 25 μm to about 70 μm, about 25 μm to about 68 μm, about 25 μm to about 66 μm, about 25 μm to about 64 μm, about 25 μm to about 62 μm or about 25 μm to about 60 μm, but is not limited thereto. When the shape of the groove is lattice-like or concentric, when the size of the plurality of pattern structures is greater than about 70 μm, the polishing effect due to the decrease in the density of the pattern structure is reduced, and when the size of the plurality of pattern structures is less than about 10 μm In this case, since the shape and height of the pattern structure are reduced, the contact surface in contact with the wafer is reduced, and the density of the pattern structure is excessively increased, thereby reducing the polishing effect.

In one embodiment of the present application, the polishing pad including a plurality of pattern structures has an optimal size of the pattern structure having an optimal range according to the shape and pitch of the grooves in a lattice or concentric circle, and the shape of the grooves. The combination can improve the polishing effect (polishing flatness and removal rate). More specifically, when the plurality of pattern structures include concentric grooves, the pitch of the concentric grooves is about 1,500 μm to about 3,000 μm, and the size of the plurality of pattern structures is about 20 μm to about 70 μm, about 20 μm to about 60 μm, about 30 μm to about 70 μm, about 30 μm to about 60 μm, about 35 μm to about 70 μm, about 35 μm to about 60 μm, about 25 μm to about 35 μm or about 20 μm to about 35 μm. In addition, when the plurality of pattern structures include lattice-like grooves, the pitch of the lattice-like grooves is about 1,000 μm to about 2,000 μm, and the size of the plurality of pattern structures is about 20 μm to about 70 μm, about 20 μm to about 60 μm, about 20 μm to about 50 μm, about 20 μm to about 40 μm or about 20 μm to about 35 μm.

In one embodiment of the present application, the plurality of pattern structures may have a density of about 200 ea/mm ² to about 2,000 ea/mm ² , but is not limited thereto. Specifically, the density of the plurality of pattern structures is about 200 ea/mm ² to about 2,000 ea/mm ² , about 200 ea/mm ² to about 1,900 ea/mm ² , about 200 ea/mm ² to about 1,800 ea/ mm ² , about 200 ea/mm ² to about 1,600 ea/mm ² , about 250 ea/mm ² to about 2,000 ea/mm ² , about 250 ea/mm ² to about 1,900 ea/mm ² , about 250 ea/mm ² to about 1,800 ea/mm ² , about 250 ea/mm ² to about 1,600 ea/mm ² , about 270 ea/mm ² to about 2,000 ea/mm ² , about 270 ea/mm ² to about 1,900 ea/mm ² , about 270 ea/mm ² to about 1,800 ea/mm ² or about 270 ea/mm ² to about 1,600 ea/mm ² , but is not limited thereto. When the density of the plurality of pattern structures is greater than about 2,000 ea / mm ² or less than about 200 ea / mm ² , the removal rate is lowered, and the value of polishing flatness increases, making it difficult to obtain a flat wafer, reducing the polishing effect There are downsides.

In one embodiment of the present application, the polishing effect (polishing flatness and removal rate) is improved due to the optimal range of hardness, tensile strength, tear strength, NCO% and elongation of the upper layer pad including the plurality of pattern structures. can

In one embodiment of the present application, the specific gravity of the upper layer pad including the plurality of pattern structures may be about 0.6 g/cm ³ to about 1.4 g/cm ³ , but is not limited thereto. Specifically, the specific gravity of the upper layer pad including the plurality of patterned structures is about 0.6 g/cm ³ to about 1.4 g/cm ³ , about 0.6 g/cm ³ to about 1.3 g/cm ³ , about 0.6 g/cm ³ to about 1.2 g/cm ³ , about 0.8 g/cm ³ to about 1.3 g/cm ³ , about 0.8 g/cm ³ to about 1.2 g/cm ³ , about 1.0 g/cm ³ to about 1.3 g/cm ³ , It may be about 1.0 g/cm ³ to about 1.2 g/cm ³ , about 1.1 g/cm ³ to about 1.3 g/cm ³ or about 1.1 g/cm ³ to about 1.2 g/cm ³ , but is not limited thereto. no. The specific gravity of the upper layer pad including the plurality of pattern structures is most preferably about 1.1 g/cm ³ to about 1.2 g/cm ³ . When the specific gravity of the upper layer pad including the plurality of pattern structures is greater than about 1.4 g/cm ³ or less than 0.6 g/cm ³ , the removal rate becomes low, and the value of polishing flatness increases, making it difficult to obtain a flat wafer. The downside is that the effect is reduced.

In one embodiment of the present application, the compression rate of the upper layer pad including the plurality of pattern structures may be about 0.3% to about 4%, but is not limited thereto. Specifically, the compressibility of the upper layer pad including the plurality of pattern structures is about 0.3% to about 4%, about 0.3% to about 3.5%, about 0.3% to about 3.0%, about 0.3% to about 2.5%, about 0.3%. % to about 2.0%, about 0.3% to about 1.5%, or about 0.5% to about 1.5%, but is not limited thereto. More specifically, when the compressibility of the upper layer pad including the plurality of pattern structures is less than about 0.3%, the removal rate is reduced and the polishing flatness value is increased, thereby reducing the polishing effect.

In one embodiment of the present application, the polishing effect (polishing flatness and removal rate) is further improved when the plurality of pattern structures are formed in an embossed shape than when formed in a concave shape, because This is because the flow of the slurry is relatively unfavorable in the patterned structure with the intaglio because the width of the concave portion of the pattern structure is narrower than the width of the concave portion dug in the intaglio form.

In one embodiment of the present application, the upper layer pad may further include pores (pores). Specifically, the upper pad may or may not include pores, and when the pores are included, there is an advantage in that impurities in the polishing process are reduced and the polishing slurry can be effectively supplied to the object to be polished.

In one embodiment of the present application, the upper layer pad may be a porous polyurethane polishing pad, but is not limited thereto.

The mixture forming the upper layer pad includes a urethane-based prepolymer, a curing agent, and a solid foaming agent, and the prepolymer generally has a relatively low molecular weight in which the degree of polymerization is stopped in the middle to facilitate molding in the manufacture of a kind of final molded product. means polymer. The prepolymer may be molded by itself or after reacting with another polymeric compound, and for example, the prepolymer may be prepared by reacting an isocyanate compound with a polyol.

The isocyanate compound used in the preparation of the urethane-based prepolymer is, for example, toluene diisocyanate (TDI), naphthalene-1,5-diisocyanate, para-phenylene diisocyanate (p-phenylene diisocyanate), tolidine diisocyanate, 4,4'-diphenyl methane diisocyanate, hexamethylene diisocyanate, dicyclohexylmethane It may be at least one isocyanate selected from dicyclohexylmethane diisocyanate and isoporone diisocyanate.

The curing agent may be at least one of an amine compound and an alcohol compound. Specifically, the curing agent may be one or more compounds selected from aromatic amines, fatty amines, aromatic alcohols, and fatty alcohols. For example, the curing agent is 4,4'-methylenebis (2-chloroaniline) (MOCA), diethyltoluenediamine, diaminodiphenyl methane, diaminodiphenyl sulfone (diaminodiphenyl sulphone) ), m-xylylene diamine, isophoronediamine, ethylenediamine, diethylenetriamine, triethylenetetramine, polypropylenediamine, Polypropylenetriamine, ethylene glycol, diethylene glycol, dipropylene glycol, butanediol, hexanediol, glycerine, trimethylolpropane ) and bis (4-amino-3-chlorophenyl) methane (bis (4-amino-3-chlorophenyl) methane).

The solid foaming agent is a thermally expanded microcapsule and may be a microballoon structure having an average particle diameter of about 5 μm to about 200 μm, but is not limited thereto. Specifically, the solid foaming agent may have an average particle diameter of about 10 μm to about 60 μm. More specifically, the solid foaming agent may have an average particle diameter of about 25 μm to about 45 μm. In addition, the thermally expanded microcapsules may be obtained by heating and expanding thermally expandable microcapsules. The thermally expandable microcapsule may include a shell containing a thermoplastic resin and a foaming agent sealed inside the shell. The thermoplastic resin may be at least one selected from vinylidene chloride-based copolymers, acrylonitrile-based copolymers, methacrylonitrile-based copolymers, and acrylic copolymers. The foaming agent encapsulated inside may be at least one selected from hydrocarbons having 1 to 7 carbon atoms. Specifically, the foaming agent enclosed therein is ethane, ethylene, propane, propene, n-butane, isobutene, butene, isobu Low molecular weights such as isobutene, n-pentane, isopentane, neopentane, n-hexane, heptane, and petroleum ether hydrocarbon; Trichlorofluoromethane (CCl ₃ F), dichlorodifluoromethane (CCl ₂ F ₂ ), chlorotrifluoromethane (CClF ₃ ), tetrafluoroethylene (CClF ₂ -CClF ₂ ) chlorofluoro hydrocarbons such as; and tetraalkylsilanes such as tetramethylsilane, trimethylethylsilane, trimethylisopropylsilane, and trimethyl-n-propylsilane.

The solid foaming agent may be a water-soluble microcapsule. Specifically, the water-soluble microcapsules may be water-soluble hollow microcapsules, and when polishing an object to be polished using a polishing slurry and a solvent, the water-soluble hollow microcapsules are dissolved by a water-soluble substance included in the polishing slurry or the solvent. It may be to form a pore. More specifically, the shell of the water-soluble hollow microcapsule may include one selected from water-soluble polymers, water-soluble vitamins, water-soluble proteins, saccharides, and combinations thereof.

Specifically, the urethane-based prepolymer and the curing agent are mixed and reacted to form a solid polyurethane to be manufactured into a sheet or the like. The isocyanate end group of the urethane-based prepolymer may react with an amine group or an alcohol group of the curing agent. At this time, the solid foaming agent is evenly dispersed in the raw material to form pores without participating in the reaction between the urethane-based prepolymer and the curing agent. The reaction between the urethane-based prepolymer and the curing agent is completed in the mold, so that a molded body in the form of a cake solidified in the shape of the mold, in which the upper layer pad and the supplementary pad are combined, can be obtained. Thereafter, the supplemental pad portion may be appropriately sliced or cut from the obtained molded body to be processed into a sheet for production of an abrasive pad.

In one embodiment of the present application, the lower pad may include at least one of a sub pad, a pressure sensitive adhesive (PSA), and a hot melt adhesive, but is not limited thereto. Specifically, the polishing pad may or may not include a sub pad, and when there is no sub pad, the polishing pad may include a substrate, an adhesive, and an upper pad formed thereon.

In one embodiment of the present application, the lower layer pad is polyolefin composed of low density polyethylene, high density polyethylene, ultra high molecular weight polyethylene and polypropylene; glycols composed of poly(tetramethylene ether) glycol (PTMG), polypropylene glycol (PPG), and polyethylene glycol (PEG); polyurethane composed of a polymer having unreacted NCO groups; polyvinyl chloride; Cellulose-based polymer composed of cellulose acetate and cellulose butyrate; acryl; polyesters and co-polyesters composed of PET and PETG; polycarbonate; It may include at least one material selected from polyamides composed of nylon 6/6 and nylon 6/12, and high-performance plastics composed of polyetheretherketone, polyphenylene oxide, polysulfone, polyimide, and polyetherimide. , but is not limited thereto.

In one embodiment of the present application, the sub pad has a thickness of about 0.001 mm to about 3 mm, a hardness of about 40 Shore A to about 80 Shore A, and a specific gravity of about 0.1 g/cm ³ to about 1.2 g/cm ³ , and the compression rate may be about 0.1% to about 30%, but is not limited thereto.

In one embodiment of the present application, the sub pad may have the same or similar components as the porous polyurethane polishing pad, but is not limited thereto. In addition, pores may be provided in the sub pad.

In one embodiment of the present application, the polishing slurry may be at least one selected from cerium oxide (CeO ₂ ), zirconia (ZrO ₂ ), silicon carbide (SiC) and alumina (Ai ₂ O ₃ ), but is limited thereto It is not.

Hereinafter, the present application will be described in more detail using examples, but the following examples are only illustrative to aid understanding of the present application, and the content of the present application is not limited to the following examples.

[Example]

<Analysis of types and characteristics of patterns of a plurality of pattern structures>

In order to confirm the tendency of the polishing effect (polishing flatness and removal rate) according to the size of the plurality of pattern structures, Pattern-60 (embossed formation having a size of about 60 μm x height of 30 μm), Pattern-50 (about Relief formation with size of 50 μm x height of 20 μm), Pattern-35 (embossed formation with size of about 35 μm x height of 15 μm) and Pattern-25 (embossment formation with size of about 25 μm x height of 10 μm) A polishing pad sample having a circular pattern structure formed on a surface thereof was prepared. 1 shows pattern arrangements of Pattern-60, Pattern-50 and Pattern-35, and Pattern-25.

The plurality of pattern structures may be manufactured in an intaglio or embossed form, and in FIG. 2, various forms (engraved and embossed) of the plurality of pattern structures (Pattern-60, Pattern-50, Pattern-35, and Pattern-25) are shown. You can check. The slurry flow of the patterned structures fabricated in the embossed shape was tested. Since the width of the concave portion of the pattern structure protruding in the embossed form is narrower than the width of the concave portion dug out in the intaglio form, the flow of the slurry is relatively unfavorable for the concave pattern structure, and the slurry in the pattern structure protruding in the embossed form flow is better. It was confirmed that this is due to the role of each pattern structure to confine the slurry in the intaglio-shaped fine pattern structure.

Since the Pattern-60, the Pattern-50 and the Pattern-35 represent an arrangement of irregular pattern structures, the value of the spacing between the pattern structures is obtained in a wide range, and the Pattern-25 has regular pattern structures. Since it represents the arrangement of the pattern structures, the spacing between the pattern structures tends to come out uniformly. Referring to FIG. 3 , the spacing (concavity) between the pattern structures of Pattern-60, Pattern-50 and Pattern-35 is about 10 μm to about 15 μm on average, and the gap between the pattern structures of Pattern-25 The spacing (recess) showed an average of about 8 μm.

Experimental example

1. Differences in removal rate and polishing flatness (non uniformity) according to groove type

In (a) of FIG. 4, various groove shapes and arrangements of various micro patterns are shown, and in (b) of FIG. 4, among various groove shapes, groove A (concentric groove having a pitch of about 3 mm) and groove B (concentric grooves with a pitch of about 2 mm) and groove C (grooves processed into a square (lattice shape)).

(1) Groove A (concentric grooves with a pitch of about 3 mm)

Groove A was formed among various grooves on the upper pad surface of the polishing pad of the example. Thereafter, the polishing effect (polishing flatness and removal rate) of the polishing pad including the pattern structures (Pattern-60, Pattern-50, Pattern-35 and Pattern-25) formed in embossed shapes using the polishing pad on which the groove A is formed ) was tested.

As can be seen in FIG. 5 , polishing of the center of the wafer of the polishing pad including the pattern-25 in the groove A shows a low removal rate value of about 700 Å, whereas polishing of the outer edge (edge) of the wafer shows about 2,800 Å showed a high removal rate value of , indicating a large difference in removal rates between the center and outer edges of the wafer. The reason why the removal rate of the central and outer edges of the wafer is high is that a plurality of pattern structures including small and dense pattern structures such as Pattern-25 have a high density and close spacing, and thus the groove A This is a phenomenon that occurs because the supply of the polishing liquid to the center of the wafer of the slurry is not smooth during the polishing process in the polishing process, which negatively affects the flow of the slurry. On the other hand, the polishing pads including the large-sized patterns of Pattern-60, Pattern-50, and Pattern-35 have similar polishing removal rates at the center and outer edges of the wafer, and in the polishing process in the groove A, the wafer of slurry The supply of the polishing liquid to the center of the is smooth, so the removal rate is excellent.

Referring to FIG. 5 , FIG. 6 shows average values of removal rates of polishing pads including Pattern-60, Pattern-50, Pattern-35, and Pattern-25 in the groove A, respectively. Referring to FIG. 6, the polishing pad including Pattern-35 in the groove A exhibits a removal rate of 1657.7 Å/min, which is much higher than that of the polishing pads including Pattern-60, Pattern-50 and Pattern-25. great. Here, although the removal rate of the polishing pad including the Pattern-25 shows a high value of 1532.9 Å/min, as described above, the polishing pad including the Pattern-25 in the groove A has a high value of 1532.9 Å/min. Since the difference in polishing of the outer shell is large, it is difficult to supply the slurry in the groove A, which negatively affects the flow of the slurry.

As can be seen in FIG. 7, the polishing flatness values of the polishing pads including Pattern-60, Pattern-50, Pattern-35, and Pattern-25, respectively, are 9.2, 9.2, 8.3, and 49.6, respectively, and the pattern- The polishing flatness value of the polishing pad containing 35 was the lowest. Here, the polishing flatness means a value obtained by dividing the average of the removal rates of the pattern structures by the standard deviation, and the smaller the polishing flatness value of the wafer, the more uniform the difference in polishing between the central and outer edges of the wafer. That is, the smaller the value of the wafer polishing flatness, the flatter the wafer can be obtained. In FIG. 7, the reason why the polishing flatness of the polishing pad including the pattern-25 is 49.6, the highest value, is that slurry is not smoothly supplied and discharged from the concentric groove to the center of the wafer.

Therefore, among the polishing pads including a large pattern structure spacing (concave width size) of about 10 μm to about 15 μm in the groove A, the smaller the size of the pattern structure (Pattern-35 > Pattern-50 > Pattern- 60) Since it has an excellent removal rate and low polishing flatness, considering both the removal rate and polishing flatness, the size of the concave width appropriate for the polishing pad including the groove A (10 μm to 15 μm) and Together, it can be inferred that the smaller the size of the pattern structure, the better the polishing effect (Pattern-35>Pattern-50>Pattern-60>Pattern-25).

(2) Groove B (concentric grooves with a pitch of about 2 mm) and Groove C (groove machined into a square (lattice))

In the polishing pad of the embodiment, the grooves are changed to groove B and groove C with smooth slurry supply, and the polishing effect of the polishing pad including Pattern-35 and Pattern-25 formed embossed in groove B and groove C (polishing flatness and removal speed) was tested. Here, the groove B means a groove that has denser grooves than the groove A and provides a relatively smooth slurry supply.

As can be seen from FIG. 8 , in groove B, the removal rates of the central and outer edges of each polishing pad including Pattern-25 and Pattern-35 were similar. On the other hand, in groove C, the removal rate of the polishing pad including the pattern-25 is much better than that of the polishing pad including the pattern-35. Referring to FIG. 8 , FIG. 9 shows average values of removal rates of polishing pads including Pattern-35 and Pattern-25 among the plurality of pattern structures in groove B and groove C, respectively. In the groove B, the removal rates of the polishing pads including Pattern-25 and Pattern-35 were similar to 797.3 Å/min and 762.6 Å/min, respectively, and in groove C, the removal rate of the polishing pad including Pattern-25 is 1949.2 Å/min, which is greater than the removal rate (1046.8 Å/min) of the polishing pad including Pattern-35.

As can be seen in FIG. 10, the polishing flatness of each polishing pad including Pattern-35 and Pattern-25 in groove B was similar to 7.7 and 8.8, respectively, and in groove C, Pattern-35 and Pattern-25 The polishing flatness of the polishing pad including each was 11.8 and 6.3, respectively. That is, there was almost no difference in polishing flatness between the polishing pads including Pattern-35 and Pattern-25 in groove B, and the polishing flatness value (6.3) of the polishing pad including Pattern-25 in groove C was It was lower than the polishing flatness value (11.8) of the polishing pad including 35. Here, the reason why the polishing flatness of the polishing pad including the pattern-35 in the groove C is high is due to various reasons such as the thickness of the polishing pad, the difference in the surface of the polishing pad, the type of slurry, and the flow of the slurry. There may be.

Therefore, when considering both removal rate and polishing flatness, there was little difference in removal rate and polishing flatness between Pattern-25 and Pattern-35 in the polishing pad including groove B, and there was little difference in removal rate and polishing flatness including groove C. In the polishing pad, the smaller and denser the pattern structure, the better the removal rate and the lower polishing flatness. Therefore, it can be inferred that the smaller and denser the pattern structure, the better the polishing effect. Therefore, the polishing pad having a small-sized pattern structure has an excellent polishing effect while supplying the slurry smoothly through a change to a lattice-shaped groove.

2. Difference in polishing effect (flattening) by density

Since the pattern structures become denser as the size of the plurality of pattern structures decreases, the density of the pattern structures in the plurality of pattern structures increases. Referring to FIG. 11, the densities of the polishing pads including Pattern-60, Pattern-50, Pattern-35, and Pattern-25 are respectively about 270 ea/mm ² , about 390 ea/mm ² , and about 810 ea/mm ² , It represents about 1,600 ea/mm ² . It is not easy to manufacture a pattern structure in which the size of the pattern structure in the groove A is larger than that of Pattern-60 and smaller than that of Pattern-35, and the pattern structure whose size is larger than that of Pattern-60 is the pattern structure of the pattern structure. There is a disadvantage that the polishing effect is reduced due to the decrease in density, and the removal rate may be good up to 20 μm and 15 μm, which is smaller than the pattern-25 in groove B and groove C, but if the size of the pattern structure goes below that, the pattern Since the shape and height of the structure are reduced, the contact surface in contact with the wafer is reduced, and the passage of the polishing liquid is also expected to be reduced, so the polishing effect is reduced.

Accordingly, it is necessary to appropriately select a groove according to the particle size of the patterned structure, the size of the concave portion, and the density of the patterned structure.

3. CMP evaluation according to the type of prepolymer

Top layer using different prepolymers (prepolymer-1, prepolymer-2, prepolymer-3, prepolymer-4, prepolymer-5 and prepolymer-6) in the same embossed micro-pattern structure (Pattern-25) and the same concentric groove (Groove C). The chemical mechanical polishing (CMP) effect according to the hardness of the pad was tested. Here, an upper layer pad having a hardness range of about 25 Shore D to about 80 Shore D was used, and the prepolymer used was a urethane-based prepolymer, and the physical properties of the prepolymer are shown in Table 1 below.

Hardness (shore D) One 2 3 Average Prepolymer-1 77.5 77.7 76.3 77.2 Prepolymer-2 73.8 72 73.5 73.1 Prepolymer-3 70.1 69.1 68.1 69.1 Prepolymer-4 63.1 64.3 65.8 64.4 Prepolymer-5 44.8 48 46 46.3 Prepolymer-6 23.4 23.7 25 24.0

In addition, the hardness, NCO%, elongation, tear strength and tensile strength of the upper pads using prepolymer-1, prepolymer-2, prepolymer-3, prepolymer-4, prepolymer-5 and prepolymer-6 used in the above experiments, respectively, were tested. The results are shown in [Table 2] below.

Hardness NCO% elongation rate tear strength tensile strength Prepolymer-1 78 9.5 220% 50 N/min 52 MPa Prepolymer-2 73 10.4 215% 49 N/min 52 MPa Prepolymer-3 69 8.6 280% 42 N/min 46 MPa Prepolymer-4 64 7.7 300% 37 N/min 45 MPa Prepolymer-5 46 6.25 350% 18 N/min 49.6 MPa Prepolymer-6 24 2.5-2.9 550% 12 N/min 34.5 MPa

Referring to FIG. 12, removal of polishing from the center and outer edges of the wafer of the polishing pad using prepolymer-3 and prepolymer-4 among prepolymer-1, prepolymer-2, prepolymer-3, prepolymer-4, prepolymer-5, and prepolymer-6. Since the speeds are similar, it can be seen that the removal rate of the polishing pad using prepolymer-3 and prepolymer-4 is excellent, and the removal rate of the polishing pad using prepolymer-4 is the best among both prepolymer-3 and prepolymer-4 can know

In addition, with reference to FIG. 12, FIG. 13 shows average values of removal rates of polishing pads using prepolymer-1, prepolymer-2, prepolymer-3, prepolymer-4, prepolymer-5, and prepolymer-6. In FIG. 13, the average removal rates of the polishing pads using prepolymer-1, prepolymer-2, prepolymer-3, prepolymer-4, prepolymer-5, and prepolymer-6 were 723.5, 993.0, 1035.0, 1140.7, 765.2, and 451.9 Å/min, respectively. , and it can be seen that the removal rate of the polishing pad using prepolymer-4 is the highest at 1140.7 Å/min (order of removal rate: prepolymer-4 > prepolymer-3 > prepolymer-2 > prepolymer-5 > prepolymer-1 > prepolymer-6), referring to [Table 2], the hardness of the polishing pad using prepolymer-4 was 64 Shore D, NCO was 7.7%, elongation was 300%, and tear strength was 37 N /mm and tensile strength was found to be 45 MPa.

In addition, the tear strength, tensile strength and specific gravity of the polishing pad using prepolymer-4 were measured, and the experimental results are shown in [Table 3].

Tear strength (N/mm) Tensile strength (MPa) Specific Gravity (g/cm ³ ) Prepolymer-4 Test 1 34.5 43.56 1.16 Prepolymer-4 Test 2 37.7 48.59 1.18 Prepolymer-4 Test 3 38.6 44.27 1.17 Average 36.9 45.47 1.17

Referring to [Table 3], when the polishing pad using the prepolymer-4 was tested three times, tear strength, tensile strength, and specific gravity were measured and average values thereof were obtained. Here, the average tear strength of the polishing pad using the prepolymer-4 was 36.9 N/mm, the average tensile strength was 45.47 MPa, and the average specific gravity was 1.17 g/cm ³ .

14, the polishing flatness of the polishing pads using prepolymer-1, prepolymer-2, prepolymer-3, prepolymer-4, prepolymer-5, and prepolymer-6 were 26.9, 16.0, 6.5, 7.0, 7.3, and 7.4, respectively. values, and the polishing flatness value of the prepolymer-3 was the lowest (prepolymer-3 > prepolymer-4 > prepolymer-5 > prepolymer-6 > prepolymer-2 > prepolymer-1).

12 to 14, the removal rate of the polishing pad using prepolymer-3 and prepolymer-4 among prepolymer-1, prepolymer-2, prepolymer-3, prepolymer-4, prepolymer-5 and prepolymer-6, respectively. It was found that 1035.0 and 1140.7 were excellent, and showed low polishing flatness of 6.5 and 7.3, respectively. Therefore, considering both the removal rate and polishing flatness, the polishing effect of the polishing pads using prepolymer-3 and prepolymer-4 is the same as that of the polishing pads using prepolymer-1, prepolymer-2, prepolymer-5, and prepolymer-6. It can be inferred that the polishing effect is better than that of the prepolymer, and it can be seen that the polishing effect varies depending on the hardness, specific gravity, compression ratio, NCO%, elongation, tear strength and tensile strength of the upper pad depending on the type of prepolymer.

Referring to [Table 1] and [Table 2] again with reference to this, since the hardness of the upper layer pad using the prepolymer-3 and prepolymer-4 represents about 69 Shore D and 64 Shore D, respectively, the hardness is about It can be inferred that the polishing effect is excellent when a prepolymer having 64 shore D to about 69 shore D is used, and the NCO%, which is a value associated with this, is about 7.7% to about 8.6%, and the tensile strength is about 45 MPa to about 46 MPa. , it can be seen that tear strength of about 37 N/mm to about 42 N/mm, specific gravity of about 1.1 g/cm ³ to about 1.2 g/cm ³ and elongation of about 200% to about 550% are most preferred. . In addition, due to the appropriate range of specific gravity of the upper layer pad (about 1.1 g/cm ³ to about 1.2 g/cm ³ ), it can be seen that the compression ratio of the upper layer pad becomes about 4% or less, and thus polishing using the upper layer pad. It can be inferred that the pad has an excellent compressibility.

Taken together, in the groove A, among the polishing pads including the spacing of large pattern structures (size of concave width) of about 10 μm to about 15 μm, the smaller the size of the pattern structures (Pattern-35>Pattern-50> Pattern-60) Since it has an excellent removal rate and low polishing flatness, it can be inferred that the polishing effect is further improved as the size of the pattern structure is smaller together with the appropriate concave size (10 μm to 15 μm) in the polishing pad. there is. In addition, among the polishing pads having a plurality of pattern structures in groove C, the smaller and denser the pattern structures are, the lower polishing flatness and excellent removal rate are exhibited. It can be inferred that the smaller the size of the pattern structure and the denser it is, the better the polishing effect is. Therefore, it is possible to improve the polishing effect (polishing flatness and removal rate) due to an optimal combination of the shape of the groove and the size of the pattern structure having an optimal range according to the shape of the groove.

In addition, the polishing effect (polishing flatness and removal rate) can be improved due to the optimal range of hardness, specific gravity, tensile strength, tear strength, NCO%, compressibility and elongation of the upper layer pad, which vary depending on the type of prepolymer. That is, it is necessary to appropriately select a groove according to the size of the abrasive particles mixed in the polishing liquid, the size of the concave portion, the density of the pattern structure, and the type of prepolymer in the gap between the pattern structures.

The above description of the present application is for illustrative purposes, and those skilled in the art will understand that it can be easily modified into other specific forms without changing the technical spirit or essential features of the present application. Therefore, the embodiments described above should be understood as illustrative in all respects and not limiting. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may also be implemented in a combined form.

The scope of the present application is indicated by the following claims rather than the detailed description above, and all changes or modifications derived from the meaning and scope of the claims and equivalent concepts thereof should be construed as being included in the scope of the present application. .

Claims (14)

A polishing pad comprising a plurality of patterned structures,
The polishing pad includes an upper pad and a lower pad,
The plurality of pattern structures are continuously formed on the surface of the upper pad, and the plurality of pattern structures are formed in embossed shapes;
In the plurality of pattern structures, a concave portion is formed between each pattern structure,
The width of the recess is 1 μm to 500 μm,
The depth of the recess is 1 μm to 100 μm,
polishing pad.
delete According to claim 1,
The hardness of the upper layer pad including the plurality of pattern structures is 40 Shore D to 80 Shore D,
The tensile strength of the upper layer pad is 30 MPa to 60 MPa,
The tear strength of the upper layer pad is 10 N / mm to 45 N / mm, the polishing pad.
According to claim 1,
NCO% of the upper layer pad including the plurality of pattern structures is 2% to 15%,
The elongation of the upper layer pad is 200% to 550%, the polishing pad.
According to claim 1,
The size of the pattern structure is 10 μm to 100 μm, the polishing pad.
delete According to claim 1,
The shape of the pattern structure is a polishing pad selected from among circular, polygonal, cylindrical, polygonal prism, conical and polygonal pyramids.
According to claim 1,
The polishing pad further comprising a groove (groove) on the surface of the upper layer pad.
According to claim 8,
The width of the groove is 100 μm to 1,000 μm,
The depth of the groove is 200 μm to 1,500 μm,
A polishing pad having a larger width and depth than the concave portion between the pattern structures.
According to claim 8,
The shape of the groove includes at least one selected from lattice, circular, concentric, elliptical, fan-shaped, arcuate, spiral, stripe, radial and oblique.
According to claim 8,
When the shape of the groove is lattice-like or concentric, the size of the plurality of pattern structures is 20 μm to 70 μm, the polishing pad.
According to claim 1,
The density of the plurality of pattern structures is 200 ea / mm ² to 2,000 ea / mm ² , the polishing pad.
According to claim 1,
The specific gravity of the polishing pad including the plurality of pattern structures is 0.6 g/cm ³ to 1.4 g/cm ³ , the polishing pad.
According to claim 1,
The compressibility of the upper layer pad including the plurality of pattern structures is 0.3% to 4%, the polishing pad.