KR102527251B1 - 이온 에너지 분포 함수들(iedf)의 생성 - Google Patents

이온 에너지 분포 함수들(iedf)의 생성 Download PDF

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KR102527251B1
KR102527251B1 KR1020217039273A KR20217039273A KR102527251B1 KR 102527251 B1 KR102527251 B1 KR 102527251B1 KR 1020217039273 A KR1020217039273 A KR 1020217039273A KR 20217039273 A KR20217039273 A KR 20217039273A KR 102527251 B1 KR102527251 B1 KR 102527251B1
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voltage
wafer
applying
ion energy
energy distribution
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KR20210150603A (ko
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레오니드 도프
트래비스 코
올리비에 루에르
올리비에 주베르트
필립 에이. 크라우스
라진더 딘사
제임스 휴 로저스
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H01L21/3065—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/248—Components associated with high voltage supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01L21/32136—
    • H01L21/67069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020217039273A 2016-12-12 2017-12-11 이온 에너지 분포 함수들(iedf)의 생성 Active KR102527251B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020237014022A KR102770824B1 (ko) 2016-12-12 2017-12-11 이온 에너지 분포 함수들(iedf)의 생성

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201662433204P 2016-12-12 2016-12-12
US62/433,204 2016-12-12
US15/834,939 2017-12-07
US15/834,939 US10312048B2 (en) 2016-12-12 2017-12-07 Creating ion energy distribution functions (IEDF)
KR1020197019342A KR102335200B1 (ko) 2016-12-12 2017-12-11 이온 에너지 분포 함수들(iedf)의 생성
PCT/US2017/065546 WO2018111751A1 (en) 2016-12-12 2017-12-11 Creating ion energy distribution functions (iedf)

Related Parent Applications (1)

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KR1020197019342A Division KR102335200B1 (ko) 2016-12-12 2017-12-11 이온 에너지 분포 함수들(iedf)의 생성

Related Child Applications (1)

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Publications (2)

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KR20210150603A KR20210150603A (ko) 2021-12-10
KR102527251B1 true KR102527251B1 (ko) 2023-04-27

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KR1020217039273A Active KR102527251B1 (ko) 2016-12-12 2017-12-11 이온 에너지 분포 함수들(iedf)의 생성
KR1020237014022A Active KR102770824B1 (ko) 2016-12-12 2017-12-11 이온 에너지 분포 함수들(iedf)의 생성
KR1020197019342A Active KR102335200B1 (ko) 2016-12-12 2017-12-11 이온 에너지 분포 함수들(iedf)의 생성

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KR1020197019342A Active KR102335200B1 (ko) 2016-12-12 2017-12-11 이온 에너지 분포 함수들(iedf)의 생성

Country Status (6)

Country Link
US (4) US10312048B2 (https=)
JP (4) JP7213808B2 (https=)
KR (3) KR102527251B1 (https=)
CN (2) CN109997214B (https=)
TW (3) TWI784991B (https=)
WO (1) WO2018111751A1 (https=)

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US20200266022A1 (en) 2020-08-20
JP2024133686A (ja) 2024-10-02
JP7766751B2 (ja) 2025-11-10
JP7703507B2 (ja) 2025-07-07
TW202312210A (zh) 2023-03-16
KR20230062662A (ko) 2023-05-09
KR102770824B1 (ko) 2025-02-19
KR20190083007A (ko) 2019-07-10
US10312048B2 (en) 2019-06-04
JP7213808B2 (ja) 2023-01-27
TWI784991B (zh) 2022-12-01
TW201833965A (zh) 2018-09-16
KR20210150603A (ko) 2021-12-10
US11728124B2 (en) 2023-08-15
CN112701025B (zh) 2024-03-26
CN109997214B (zh) 2023-08-22
KR102335200B1 (ko) 2021-12-02
JP2020501351A (ja) 2020-01-16
US11069504B2 (en) 2021-07-20
US20180166249A1 (en) 2018-06-14
CN112701025A (zh) 2021-04-23
TWI855415B (zh) 2024-09-11
TW202503813A (zh) 2025-01-16
WO2018111751A1 (en) 2018-06-21
US20210343496A1 (en) 2021-11-04
CN109997214A (zh) 2019-07-09
JP2026012871A (ja) 2026-01-27
US10685807B2 (en) 2020-06-16
US20190259562A1 (en) 2019-08-22
JP2023022086A (ja) 2023-02-14

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