KR102522762B1 - Plasma scrubber supplying reaction water to the reaction chamber and method for treating waste gas using the same - Google Patents

Abstract

Plasma generator 10; A reaction chamber 30 for thermal decomposition of waste gas by plasma; And a plasma scrubber including a reaction water supply unit 40 for supplying reaction water to the reaction chamber. The reaction water supply unit 40 includes a reaction water supply pipe 42 connected to the reaction water inlet 41; A valve 43 for controlling the flow rate of the reaction water supplied to the reaction water supply pipe 42; a pressure gauge 44 disposed between the reaction water inlet 41 and the valve 43; a PLC module 45 for receiving a pressure value of the reaction water flowing through the reaction water supply pipe 42 measured by the pressure gauge 44 and calculating a pressure value for each flow rate; and a control unit 50 for controlling the supply of the set amount of reaction water to the reaction chamber 30 based on the pressure value for each flow rate calculated by the PLC module.

Description

Plasma scrubber for supplying reaction water to the reaction chamber and waste gas treatment method using the same

The present invention relates to a plasma scrubber for processing waste gas from semiconductors and a waste gas treatment method using the same. More specifically, it relates to a plasma scrubber capable of supplying reaction water in a quantitative amount to a reaction chamber and a waste gas treatment method using the same.

Semiconductors are manufactured through various manufacturing processes such as circuit design, mask manufacturing, exposure, etching, diffusion, thin film, cleaning, polishing, etc. In these semiconductor manufacturing processes, toxic, flammable and corrosive gases are used. Therefore, the waste gas discharged during the semiconductor process may contain a large amount of harmful components.

If such waste gas (harmful gas) is leaked outside without a separate purification process, it may cause serious environmental pollution and safety accidents of workers along with damage to nearby manufacturing facilities. Accordingly, in order to lower the harmful components of the waste gas below the standard value, it is legally obliged to undergo a purification process.

Scrubbers can be used to treat waste gas. Scrubbers used in the semiconductor industry are various toxic gases, acid gases, and combustible gases (SiH ₄ , SiH ₆ , As ₃ , PH ₃ , etc.) generated during the semiconductor manufacturing process. , Environmentally harmful gases (PFC type: SF ₆ , NF ₃ , CF ₄ , C ₂ F ₆ , C ₃ F ₈ , etc.) are purified and discharged. These scrubbers may be classified into wet-type, dry-type, burn-type, adsorption-type, plasma-type and the like according to the treatment method.

In particular, the plasma scrubber is very effective in treating a highly stable thermally and chemically recalcitrant material with a high warming potential by using a high temperature and high chemical activity. In addition, it has advantages such as low operating cost and convenience of use. Due to these advantages, the plasma scrubber is recognized as a competitive technology. Accordingly, in general, a plasma scrubber system is applied in a semiconductor post-processing process. 1 and 2 show an example of a plasma scrubber system disclosed in Korean Patent Application No. 10-2020-0134222.

Due to the boom in the semiconductor industry around the world, the production of semiconductors has increased, and the expansion of high integration (nano process) in the semiconductor manufacturing process has increased the use of utilities such as gas and water as well as energy including electricity. , standards for improving energy efficiency, expanding the use of renewable energy, and reducing process emissions are becoming more stringent.

In order to meet this trend, Korean Patent Registration No. 10-1391191 discloses a by-product removal device for efficiently removing by-products such as powder deposited in a reaction chamber while burning harmful gases and a plasma scrubber equipped with the same. 3 shows an example of a plasma scrubber having a by-product removal device for a scrubber disclosed in Korean Patent Registration No. 10-1391191.

However, it is difficult to effectively remove harmful components in the waste gas only with the by-product removal device for a scrubber of Korean Patent Registration No. 10-1391191, so that hydrogen atoms (H ⁺ ) are removed from the reaction water by supplying reaction water ((H ₂ O) into the reaction chamber. A technology is being used to capture fluorine atoms (F ^- ) by generating them, dissolve them in water, and discharge them. In order to reduce the power consumption while suppressing the generation of reaction by-products, reaction water (H ₂ O) is supplied into the reaction chamber, so that the reaction water supplies chemical species such as H and OH by high-temperature waste gas heat in the reaction chamber, and this process Hydrogen atoms (H ⁺ ) generated in the process capture fluorine atoms (F ^- ) generated in the thermal decomposition process of waste gas to generate hydrogen fluoride (HF), which is dissolved in a water treatment tank disposed at the bottom of the reaction chamber and discharged. , If the amount of reaction water supplied to the reaction chamber is excessive, the stability of the plasma discharge in the reaction chamber may deteriorate, and if the amount of reaction water supplied to the reaction chamber is insufficient, chemical species such as H and OH Due to insufficient generation of hydrogen atoms (H ⁺ ) to capture fluorine atoms (F ^- ), the efficiency of generating hydrogen fluoride (HF) may decrease.

For the above reasons, a flow control mechanism (for example, a ball flowmeter, etc.) for controlling the supply amount of reaction water into the reaction chamber of the plasma scrubber is used, and this conventional flow control mechanism has an opening (opening) of the reaction water supply passage. degree) to control the flow rate. However, since the flow rate supplied through the conventional flow rate control mechanism changes depending on the environment such as the surrounding temperature and pressure, it is difficult to control and supply the quantity of reaction water (water) required in the reaction chamber in a quantitative manner. case occurs

On the other hand, in order to quantitatively control the reaction water supplied into the reaction chamber, for example, a constant delivery pump may be used, but such a constant delivery pump is large, and the reaction water supply system of the plasma scrubber This becomes complicated, and there is a problem in that system installation costs are excessively consumed.

The present invention was invented to solve the above problems, and an object of the present invention is to convert the pressure value of the reaction water supplied to the reaction chamber into a flow rate value, and supply it to the reaction chamber by controlling the pressure value of the reaction water. It is to provide a reaction water supply device of a plasma scrubber capable of quantitatively controlling the flow rate value and a waste gas treatment method using the same. However, these tasks are illustrative, and the scope of the present invention is not limited thereby.

A plasma scrubber for supplying reaction water to a reaction chamber according to an embodiment of the present invention includes a plasma generating unit for generating plasma by a plasma forming gas injected from a plasma forming gas supply unit; a reaction chamber for thermally decomposing the waste gas by the plasma introduced from the plasma generating unit; and a reaction water supply unit for supplying reaction water (water) to the reaction chamber, wherein the reaction water supply unit includes a reaction water supply pipe connected to a reaction water inlet located at an upper end of the reaction chamber; A valve for controlling the flow rate of the reaction water supplied to the reaction water supply pipe; a pressure gauge disposed between the reaction water inlet and the valve; a PLC module for receiving a pressure value of the reaction water flowing through the reaction water supply pipe measured by the pressure gauge and calculating a pressure value for each flow rate; And it may include a control unit for controlling the supply of the set amount of reaction water to the reaction chamber based on the pressure value for each flow rate calculated by the PLC module.

In the plasma scrubber for supplying reaction water to the reaction chamber according to an embodiment of the present invention, the control unit may include a display unit that displays a flow rate value corresponding to the pressure value received from the PLC module.

In addition, in the plasma scrubber for supplying reaction water to the reaction chamber according to an embodiment of the present invention, the valve may be made of a manual control valve or an electronic control valve.

In addition, in the plasma scrubber for supplying reaction water to the reaction chamber according to an embodiment of the present invention, the reaction water flow rate supplied from the reaction water supply unit to the reaction chamber is within the range of 5.0 ml / min to 9.0 ml / min. can be determined

In addition, in the plasma scrubber for supplying reaction water to the reaction chamber according to an embodiment of the present invention, the flow rate of reaction water supplied from the reaction water supply unit to the reaction chamber is less than 5.0 ml/min or exceeds 9.0 ml/min. In the case of, it may further include an alarm device that generates an alarm.

In addition, in the plasma scrubber for supplying reaction water to the reaction chamber according to an embodiment of the present invention, electromagnetic waves generated from an electromagnetic wave oscillator are transmitted, and are horizontally disposed across the plasma generating unit to provide electromagnetic waves to the plasma generating unit. It may further include an electromagnetic wave guide to

In addition, in the plasma scrubber for supplying reaction water to the reaction chamber according to an embodiment of the present invention, the cross section of the electromagnetic waveguide is gradually reduced on the side where electromagnetic waves are introduced from the electromagnetic wave oscillator, and then the cross section is It remains constant, and the end is closed so that electromagnetic waves can be reflected from the end.

On the other hand, according to another embodiment of the present invention, a method for quantitatively controlling the flow rate of reaction water supplied to the reaction chamber of the plasma scrubber includes a first step of flowing the reaction water through the reaction water supply passage by opening the valve means. step; a second step of measuring the pressure of the reaction water flowing through the reaction water supply passage in the first step; a third step of transmitting the flow rate data in the first step and the pressure data in the second step to a PLC module to calculate a pressure value corresponding to a specific flow rate value; a fourth step of calculating pressure values corresponding to respective flow rates by repeatedly performing the first to third steps while varying the reaction water flow rate by adjusting the opening degree of the valve means in the first step; a fifth step of displaying the pressure values for each flow rate obtained in the fourth step; and a sixth step of controlling the flow rate of the reaction water by controlling the pressure value based on the pressure value for each flow rate displayed in the fifth step.

In the method for quantitatively controlling the flow rate of the reaction water supplied to the reaction chamber of the plasma scrubber according to another embodiment of the present invention, the valve means used in the first step may be a manual control valve or an electronic control valve. .

In addition, in the method for quantitatively controlling the flow rate of the reaction water supplied to the reaction chamber of the plasma scrubber according to another embodiment of the present invention, the flow rate of the reaction water supplied from the reaction water supply unit to the reaction chamber in the sixth step is 5.0 ml. The pressure value can be controlled so as to be set within the range of /min to 9.0 ml/min.

In addition, in the method for quantitatively controlling the flow rate of the reaction water supplied to the reaction chamber of the plasma scrubber according to another embodiment of the present invention, the flow rate of the reaction water supplied from the reaction water supply unit to the reaction chamber in the sixth step is 5.0 ml. A seventh step of generating an alarm when the pressure corresponding to the case where the pressure is less than /min or exceeds 9.0ml/min is detected may be further included.

According to the plasma scrubber for supplying the reaction water in a quantitative amount to the reaction chamber and the waste gas treatment method using the same according to an embodiment of the present invention made as described above, the pressure value of the reaction water supplied to the reaction chamber is converted into a flow rate value , By controlling the flow rate value quantitatively by controlling the pressure value of the reaction water, it is possible to quantitatively control the reaction water supplied to the reaction chamber of the plasma scrubber by a simple configuration without using a complicated, large, and expensive constant discharge pump. can Of course, the scope of the present invention is not limited by these effects.

1 is a schematic perspective view of a prior art plasma scrubber system.
2 is a front view of the prior art plasma scrubber system of FIG. 1;
3 is a schematic diagram of a prior art plasma scrubber equipped with a byproduct removal device.
4 is a schematic diagram of a plasma scrubber capable of supplying reaction water in a quantitative amount to a reaction chamber according to an embodiment of the present invention.
5 is a flowchart of a waste gas treatment method using a plasma scrubber for supplying reaction water in a quantitative amount to a reaction chamber according to another embodiment of the present invention.

Objects, features and advantages of the present invention described above will become more apparent through the following examples in conjunction with the accompanying drawings.

The following specific structural or functional descriptions are merely illustrated for the purpose of explaining embodiments according to the concept of the present invention, and embodiments according to the concept of the present invention can be implemented in various forms and are described in this specification or application. It should not be construed as limited to the examples.

Embodiments according to the concept of the present invention can be applied with various changes and can have various forms, so specific embodiments are illustrated in the drawings and described in detail in this specification or application. However, this is not intended to limit the embodiments according to the concept of the present invention to a specific disclosed form, and should be understood to include all modifications, equivalents, or substitutes included in the spirit and technical scope of the present invention.

Terms such as first and/or second may be used to describe various components, but the components are not limited to the above terms. The above terms are used only for the purpose of distinguishing one component from other components, for example, without departing from the scope of rights according to the concept of the present invention, a first component may be named a second component, and similar Happily, the second component may also be referred to as the first component.

When a component is said to be "connected" or "connected" to another component, it means that it may be directly connected or connected to the other component, but other components may exist in the middle. It should be understood. On the other hand, when a component is referred to as “directly connected” or “directly connected” to another component, it should be understood that no other component exists in the middle. Other expressions for describing the relationship between components, such as "between" and "directly between" or "adjacent to" and "directly adjacent to" should be interpreted similarly.

Terms used in this specification are only used to describe specific embodiments and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, terms such as "comprise" or "having" are intended to indicate that the described feature, number, step, operation, component, part, or combination thereof exists, but that one or more other features or numbers, It should be understood that the presence or addition of steps, operations, components, parts, or combinations thereof is not precluded.

Unless defined otherwise, all terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and unless explicitly defined in this specification, it should not be interpreted in an ideal or excessively formal meaning. don't

Hereinafter, the present invention will be described in detail by describing embodiments of the present invention with reference to the accompanying drawings. Like reference numerals in each figure indicate like elements.

4 is a schematic diagram of a plasma scrubber capable of supplying reaction water in a quantitative amount to a reaction chamber according to the present invention.

First, the effect of the reaction water in the plasma scrubber for supplying the reaction water to the reaction chamber will be described.

For example, in order to reduce the power consumption while suppressing the generation of reaction by-products in the process of treating a difficult to decompose gas such as waste refrigerant by using thermal decomposition in a plasma scrubber, reaction water ((H ₂ O) is supplied into the reaction chamber. As shown in Reaction Formula (1) below, hydrogen atoms (H ⁺ ) are generated from the reaction water, and the hydrogen atoms capture fluorine atoms (F ^- ) to convert them into hydrogen fluoride (HF) and discharge them.

F+H→HF (One)

This hydrogen fluoride (HF) is water-soluble and has the property of being well soluble in water, and is a substance that can be removed relatively easily using a general wet scrubber or adsorbent.

By supplying reaction water (H ₂ O) into the reaction chamber, the reaction water can provide chemical species such as H and OH through the following reaction equations (2) to (4) by the high temperature waste gas heat in the reaction chamber. there is.

H ₂ O + e → H + OH + e' (2)

H ₂ O + e → H ₂ O ^- (3)

H ₂ O ^- → H + OH + e'

H ₂ O → H ⁺ + OH ^- (4)

OH ^- → OH + e'

H ⁺ + e' → H

Hydrogen atoms (H ⁺ ) generated in this process capture fluorine atoms (F ^- ) generated during the thermal decomposition of waste gas to generate hydrogen fluoride (HF), which is dissolved in a water treatment tank disposed at the bottom of the reaction chamber and discharged. .

Plasma scrubber 100 for supplying reaction water to the reaction chamber according to an embodiment of the present invention supplies reaction water to the plasma generator 10, the reaction chamber 30 for thermally decomposing waste gas by plasma, and the reaction chamber By including the reaction water supply unit 40, the pressure value of the reaction water supplied to the reaction chamber is converted into a flow rate value, and the flow rate value supplied to the reaction chamber can be controlled quantitatively by controlling the pressure value of the reaction water. there is.

As shown in FIG. 4, the reaction water supply unit 40 includes a reaction water supply pipe 42 connected to the reaction water inlet 41 located at the upper end of the reaction chamber 30; a valve 43 for controlling the flow rate of the reaction water supplied to the reaction water supply pipe 42; a pressure gauge 44 disposed between the reaction water inlet 41 and the valve 43; a PLC module 45 for receiving a pressure value of the reaction water flowing through the reaction water supply pipe 42 measured by the pressure gauge 44 and calculating a pressure value for each flow rate; And it may include a control unit 50 that controls so that the set amount of reaction water is supplied to the reaction chamber 30 based on the pressure value for each flow rate calculated by the PLC module.

The valve 43 is a manual valve that allows the user to adjust the opening of the valve based on a display scale or dial, or an electronic control valve that electronically sets and adjusts the flow rate of the valve (for example, a solenoid valve) may be used.

Next, the operation of the plasma scrubber 100 for supplying the reaction water in a fixed quantity to the reaction chamber 30 according to an embodiment of the present invention having the above configuration will be described.

First, the amount of water (reaction water) injected from the outlet (reaction water inlet of the reaction chamber) 41 is measured with the valve 43 properly adjusted. For example, the flow rate of reaction water sprayed per minute (min) through the discharge port is measured.

While the reaction water is supplied to the reaction chamber in the above state, the pressure value of the reaction water in the reaction water supply pipe 42 is measured through the pressure gauge (P) 44.

The measured flow rate value of the reaction water and the corresponding pressure value of the reaction water are transmitted to the PLC module 45, and the data obtained by calculating the pressure value for each flow rate in the PLC module 45 is transferred to the PLC module 45. Save.

Next, the flow rate value measured while gradually opening or closing the valve 43 by a predetermined unit and the pressure value corresponding to the flow rate value measured through the pressure gauge 44 are sequentially transmitted to the PLC module 45, , The data base is built by repeating the procedure of calculating the pressure value for each flow rate in the PLC module 45 and storing the obtained data in the PLC module 45. By setting the pressure value of the reaction water flowing inside the reaction water supply pipe 42 based on the pressure value for each flow rate obtained in this way, a quantity of reaction water corresponding to the pressure value is supplied to the reaction chamber 30 .

According to one embodiment of the present invention, the control unit 50 may include a display unit 51 that displays a flow rate value corresponding to the pressure value received from the PLC module 45 . Accordingly, the user can accurately control the flow rate of the reaction water supplied to the reaction chamber 30 based on the pressure value displayed on the display unit 51 .

The flow rate of the reaction water supplied from the reaction water supply unit 40 to the reaction chamber 30 may be determined within a range of 5.0 ml/min to 9.0 ml/min.

When the flow rate of the reaction water supplied to the reaction chamber 30 is less than 5.0 ml/min, generation of chemical species such as H and OH is insufficient, so that hydrogen atoms (H ⁺ ) capture fluorine atoms (F ^- ) to fluoride The efficiency of generating hydrogen (HF) may decrease. In addition, when the flow rate of the reaction water supplied to the reaction chamber 30 is 9.0 ml/min or more, the stability of the plasma discharge in the reaction chamber may deteriorate.

According to one embodiment of the present invention, when the flow rate of the reaction water supplied from the reaction water supply unit 40 to the reaction chamber 30 is less than 8.0 ml/min or exceeds 9.0 ml/min, an alarm (Warning or Alarm) may further include an alarm device. When the flow rate of the reaction water supplied to the reaction chamber 30 is less than 5.0 ml/min or exceeds 9.0 ml/min, an alarm is generated to the user so that the state of the plasma scrubber can be checked.

In general, waste gas (harmful gas) discharged from a semiconductor manufacturing facility in a semiconductor manufacturing process is introduced into the plasma scrubber 100 through an inlet. The waste gas may include a PFC-based gas used in a semiconductor manufacturing process. Such PFC-based harmful gases may include CF ₄ , C ₂ F ₆ , C ₃ F ₈ , CHF ₃ , and SF ₆ . A plasma generator 10 may be connected to one side of the inlet.

In the plasma scrubber 100 for supplying reaction water in a quantitative amount to the reaction chamber according to an embodiment of the present invention, the plasma generating unit 10 is supplied by a plasma forming gas injected from a plasma forming gas supply unit (not shown). It generates plasma and can be placed vertically with respect to the bottom surface. A high frequency discharge tube may be provided in the plasma generating unit 10, and plasma is generated by discharging a plasma forming gas in the high frequency discharge tube.

The plasma generating unit 10 is connected to one side of the inlet and can generate plasma (flame) to burn the waste gas introduced through the inlet. Such plasma may be generated by the interaction of the anode electrode body 11 and the cathode electrode body 12 with a plasma forming gas (eg, nitrogen gas). In addition, the temperature of the plasma may be, for example, about 1000 °C to 3000 °C. However, the temperature may vary depending on the type of gas, inflow amount, pressure conditions, and the like. In general, when energy is applied to a material in a solid state, it sequentially changes into a liquid and a gas. When more energy is applied to such a gaseous object by heating or discharge, the gas is dissociated into smaller particles such as atoms, ions, electrons, etc., and this state is called a plasma state. Since the plasma state is an ionized state, unlike solid, liquid, and gaseous states, electricity flows, and since positive ions (+) and negative ions (-) are in parallel as a whole, it is electrically neutral. A scrubber using such a plasma has a high reactivity. The plasma generating unit 10 may supply a plasma forming gas such as CO ₂ to an electromagnetic wave discharge tube (not shown) through a plasma forming gas supply unit installed upstream. In addition, the plasma generating unit may supply reactive gases such as CH ₄ , H ₂ O, and O ₂ to a high frequency discharge tube (not shown) through a reactive gas supply unit (not shown) installed downstream of the plasma generating unit.

In the plasma scrubber 100 for supplying reaction water in a quantitative amount to the reaction chamber according to an embodiment of the present invention, the reaction chamber 30 thermally decomposes the waste gas by the plasma introduced from the plasma generating unit 10. The reaction chamber 30 may be cooled by flowing process cooling water (PCW) into the outer circumferential wall of the reaction chamber 30 . For example, an inlet of the cooling medium PCW may be installed on an outer circumferential wall of the upstream side of the reaction chamber 30 .

In the plasma scrubber 100 for supplying the reaction water in a quantitative amount to the reaction chamber according to an embodiment of the present invention, the waste gas preheating unit has an outer diameter smaller than the inner diameter of the reaction chamber 30 and is formed concentrically with the reaction chamber, A flow passage is formed between the inner circumferential surface of the chamber 30, a waste gas inlet is formed on the outer wall of the downstream side of the reaction chamber 30, and a waste gas outlet is formed on the upstream side of the reaction chamber 30. It can be done. With this configuration, the temperature of the waste gas can be raised to about 800° C. before the waste gas comes into contact with the plasma, so in the prior art, when the waste gas at normal temperature comes into contact with the high-temperature plasma of about 1200° C. to 1300° C. It is possible to prevent a phenomenon in which the thermal decomposition action is delayed until the waste gas rises to about 700 ° C. at which the thermal decomposition begins. Therefore, in the waste gas preheating unit of the plasma scrubber 100 for supplying reaction water in a quantitative amount to the reaction chamber according to an embodiment of the present invention, the waste gas in the reaction chamber 30 is raised to a temperature suitable for thermal decomposition by plasma. Since it comes into contact with plasma next, the thermal decomposition efficiency of the waste gas can be improved. The temperature of the waste gas discharged from the discharge port of the waste gas preheating unit may be about 800 °C.

Since the waste gas preheating unit is disposed in the high-temperature reaction chamber 30, it may be made of a metal material having heat resistance. For example, it can be made of stainless steel, such as SUS 304 and SUS 316 stainless steel.

In addition, the plasma scrubber 100 for supplying the reaction water in a quantitative amount to the reaction chamber according to an embodiment of the present invention transmits electromagnetic waves generated from the electromagnetic wave oscillator and is horizontally disposed across the plasma generator 10 to form the plasma An electromagnetic waveguide for providing electromagnetic waves to the generator may be further included. Plasma mixed with electromagnetic waves can be introduced into the discharge chamber 30 by the electromagnetic waveguide. In this way, the decomposition rate of the waste gas is increased due to the electromagnetic wave being mixed into the plasma, so that the same thermal decomposition rate of the waste gas can be achieved with lower power than in the prior art. The plasma scrubber 100 for supplying reaction water to the reaction chamber according to an embodiment of the present invention can reduce power by about 20% compared to a conventional plasma scrubber by using a hybrid plasma torch.

The cross section of the electromagnetic waveguide is gradually reduced on the side where electromagnetic waves are introduced from the electromagnetic wave oscillator, and the cross section is maintained constant in the region where it intersects the plasma generator, and the end is closed so that the electromagnetic wave can be reflected at the end. The reason why the cross section of the electromagnetic wave inflow side of the electromagnetic waveguide is gradually reduced is to smoothly guide the electromagnetic waves propagating from the electromagnetic wave oscillator to the intersection area with the plasma generator, and the end of the electromagnetic waveguide to be closed It is for guiding toward the plasma generating unit by reflecting electromagnetic waves that have not propagated toward the plasma generating unit at the end portion.

The plasma scrubber 100 for supplying reaction water in a fixed amount to the reaction chamber according to an embodiment of the present invention may be used in combination with a water treatment tank 200 and an outlet tower (not shown).

The water treatment tank 200 may be located below the plasma scrubber 100, and may purify waste gas (harmful gas) thermally decomposed (combusted) by passing through the plasma scrubber 100. In the water treatment tank 200, waste gas passing through the plasma scrubber 100 is introduced and brought into contact with water. Accordingly, by-products (powder) and/or water-soluble gas generated in the waste gas treatment process may be dissolved.

An outlet tower (not shown) is located above the water treatment tank 200 and can pass through the water treatment tank 200 to remove foreign substances included in gas rising from the water treatment tank 200 . The gas that has passed through the outlet tower is discharged to the outside as harmless gas that has been purified.

Next, with reference to FIG. 5, a waste gas treatment method using a plasma scrubber for supplying reaction water in a quantitative amount to a reaction chamber according to another embodiment of the present invention will be described.

In the first step (S10), the valve means 43 is appropriately opened to flow the reaction water through the reaction water supply passage.

Next, in the second step (S20), the pressure of the reaction water flowing through the reaction water supply passage in the first step (S10) is measured.

Next, in the third step (S30), the flow rate data in the first step (S10) and the pressure data in the second step (S20) are transmitted to the PLC module to calculate a pressure value corresponding to the flow rate value. do.

Next, in the fourth step (S40), the first step (S10) to the third step (S30) while changing the reaction water flow rate by adjusting the opening degree of the valve unit in the first step (S10) step by step. By repeatedly performing, the data base is built by repeating the procedure of sequentially transmitting and storing the data obtained by calculating the pressure value for each flow rate to the PLC module 45. Based on the pressure value for each flow rate obtained in this way, by setting the pressure value of the reaction water flowing through the reaction water supply pipe 42, a quantity of reaction water corresponding to the pressure value is supplied to the reaction chamber 30.

Next, in the fifth step (S50), the pressure value for each flow rate obtained in the fourth step (S40) is displayed.

Next, in the sixth step (S50), based on the pressure value for each flow rate displayed in the fifth step (S50), the flow rate of the reaction water may be accurately controlled through the control of the pressure value. In the sixth step (S60), the pressure value can be controlled so that the flow rate of the reaction water supplied from the reaction water supply unit 40 to the reaction chamber 30 is set within the range of 5.0 ml/min to 9.0 ml/min. there is.

In the waste gas treatment method using a plasma scrubber for supplying reaction water in a quantitative amount to the reaction chamber according to another embodiment of the present invention, in the sixth step (S60), the reaction supplied from the reaction water supply unit 40 to the reaction chamber 30 A seventh step (S70) of generating an alarm when a pressure corresponding to the case where the water flow rate is less than 5.0 ml/min or exceeds 9.0 ml/min may be further included. Utilizing this seventh step (S70), when the flow rate of the reaction water supplied to the reaction chamber 30 is less than 5.0 ml/min or exceeds 9.0 ml/min, an alarm is generated to the user to change the state of the plasma scrubber. allow you to check

The present invention has been described with reference to the embodiments shown in the drawings, but this is only exemplary, and those skilled in the art to which the present invention belongs can make various modifications and other equivalent embodiments. will understand Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the claims.

10: plasma generator
30: reaction chamber
40: reaction water supply unit
41: reaction water inlet
42: reaction water supply pipe
43: valve
44: pressure gauge (P)
45: PLC module
50: control unit
51: display unit
100: plasma scrubber
200: water treatment tank

Claims (9)

a plasma generating unit 10 generating plasma by means of the plasma forming gas injected from the plasma forming gas supply unit; A reaction chamber 30 for thermally decomposing the waste gas by the plasma flowing from the plasma generating unit 10; And in the plasma scrubber comprising a reaction water supply unit 40 for supplying reaction water (H ₂ O) to the reaction chamber,
The reaction water supply unit 40 includes a reaction water supply pipe 42 connected to the reaction water inlet 41 located at the upper end of the reaction chamber;
a valve 43 for controlling the flow rate of the reaction water supplied to the reaction water supply pipe 42;
a pressure gauge 44 disposed between the reaction water inlet 41 and the valve 43;
a PLC module 45 for receiving a pressure value of the reaction water flowing through the reaction water supply pipe 42 measured by the pressure gauge 44 and calculating a pressure value for each flow rate; and
Plasma for supplying the reaction water in a quantitative amount to the reaction chamber, characterized in that it comprises a control unit 50 for controlling the supply of the reaction number of a predetermined amount to the reaction chamber 30 based on the pressure value for each flow rate calculated by the PLC module. scrubber.
According to claim 1,
The control unit 50 is a plasma scrubber for supplying reaction water in a quantitative amount to the reaction chamber, characterized in that it comprises a display unit 51 for displaying a flow rate value corresponding to the pressure value received from the PLC module 45.
According to claim 1,
The valve 43 is a plasma scrubber for supplying a quantity of reaction water to the reaction chamber, characterized in that the manual control valve or electronic control valve.
According to claim 1 or 2,
The reaction water flow rate supplied from the reaction water supply unit 40 to the reaction chamber 30 is determined in the range of 5.0 ml / min to 9.0 ml / min. plasma scrubber.
According to claim 4,
Further comprising an alarm device generating an alarm when the flow rate of the reaction water supplied from the reaction water supply unit 40 to the reaction chamber 30 is less than 5.0 ml / min or exceeds 9.0 ml / min Plasma scrubber that supplies reaction water in a fixed amount to the reaction chamber.
In the method for quantitatively controlling the flow rate of the reaction water supplied to the reaction chamber of the plasma scrubber,
A first step (S10) of opening the valve means to flow the reaction water through the reaction water supply passage;
A second step (S20) of measuring the pressure of the reaction water flowing through the reaction water supply passage in the first step;
A third step (S30) of transmitting the flow rate data in the first step and the pressure data in the second step to a PLC module to calculate a pressure value corresponding to a specific flow rate value;
A fourth step of calculating pressure values corresponding to respective flow rates by repeatedly performing the first to third steps while changing the reaction water flow rate by adjusting the opening degree of the valve means in the first step (S40). );
A fifth step (S50) of displaying the pressure value for each flow rate obtained in the fourth step; and
and a sixth step (S60) of controlling the flow rate of the reaction water by controlling the pressure value based on the pressure value for each flow rate displayed in the fifth step.
According to claim 6,
The method according to claim 1, wherein the valve means used in the first step is a manual control valve or an electronic control valve.
According to claim 6 or 7,
In the sixth step, the pressure value is controlled so that the flow rate of the reaction water supplied from the reaction water supply unit 40 to the reaction chamber 30 is set within the range of 5.0 ml/min to 9.0 ml/min.
According to claim 8,
In the sixth step, when the pressure corresponding to the case where the flow rate of the reaction water supplied from the reaction water supply unit 40 to the reaction chamber 30 is less than 5.0 ml / min or exceeds 9.0 ml / min, an alarm is generated. The method characterized in that it further comprises a seventh step (S70).

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