KR102522589B1 - Anti-static ceramic parts for semiconductor manufacturing equipment - Google Patents

Abstract

Antistatic ceramic parts for semiconductor manufacturing equipment according to the present invention further include 10 to 20 parts by weight of secondary materials as raw materials based on 100 parts by weight of a main material composed of at least one type of metal oxide, which is the main raw material for ceramic parts. The main material composed of 5 to 75 wt% of Al_2O_3 and 25 to 35 wt% of conductive metal oxide is included in input raw materials together with auxiliary materials. The anti-static ceramic parts with a surface resistance of 10^7Ω·cm have almost no accumulation of static electricity due to electrostatic charging and have a high static electricity attenuation ability.

Description

Antistatic ceramic parts for semiconductor manufacturing equipment {ANTI-STATIC CERAMIC PARTS FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT}

The present invention relates to an antistatic ceramic part that can be used for electronic products or semiconductor manufacturing equipment, and more particularly, it is excellent in static electricity attenuation while satisfying other physical properties such as mechanical strength of conventional ceramic parts, thereby manufacturing an electronic product or a semi-solid body. It relates to a ceramic part with excellent antistatic function optimized for application to

BACKGROUND ART In manufacturing electronic products, particularly semiconductor products, when current flows in an unintended way or sparks due to current are generated in the product during the manufacturing process, product damage or defects occur.

Therefore, various parts for electronic products or semiconductor manufacturing equipment, such as transfer arms, trays, chip mounting nozzles, vacuum chucks for wafer adsorption, and electrostatic chucks used to transfer semiconductor wafers, large glass substrates for displays, and electronic component chips, etc. Antistatic ability is required, in which static electricity is hardly charged or easily removed.

On the other hand, alumina ceramic means aluminum oxide, and ceramic parts made of aluminum oxide are one of the materials with excellent wear resistance, such as high hardness, wear resistance, heat resistance, chemical resistance (chemical resistance, corrosion resistance), high mechanical strength, dielectric strength, and high-voltage insulation. Since it has excellent yield strength and manufacturing cost is also advantageous in terms of raw materials and processability, various chemicals are used and it is suitable as a material for processing parts such as electronic products and semiconductors having high-temperature process conditions.

However, since pure alumina ceramic parts have very high insulation resistance, when static electricity is generated, it does not flow away and accumulates, which can adsorb dust in the air to contaminate the surface of the part and cause electrostatic failure in the manufacturing process this exists

Therefore, antistatic coating or surface-treated products for imparting antistatic function are provided by methods such as forming a Teflon coating layer on the surface of parts for manufacturing equipment made of alumina ceramics, Deterioration in terms of mechanical properties is unavoidable, antistatic ability is implemented only on the surface, so static dissipation is relatively slow, and when the surface layer is worn or lost, there is a problem in that antistatic ability, etc. is greatly reduced, and the surface in the parts manufacturing process It causes manufacturing complexity and unit cost increase due to the additional treatment process.

As a way to solve this problem, various attempts have been proposed to simultaneously satisfy the high mechanical properties and antistatic function of ceramics by imparting a certain degree of conductivity while manufacturing them in the form of ceramic material parts. , abrasion resistance, mechanical properties comparable to those of conventional ceramic parts, and at the same time, parts with high antistatic ability by having optimal surface resistance values and their manufacturing technology have not been provided.

Prior art documents include Japanese Patent Publication JP 3305053 B2 and the like.

Japanese Patent Publication JP 3305053 B2

In order to solve the above-mentioned problems of the prior art, the present invention includes alumina as a basic material of a ceramic main material, but is configured to further include other optimal components to improve high mechanical properties and optimal antistatic properties of existing ceramic parts. To provide an antistatic ceramic part that can satisfy both requirements.

In order to achieve the above object, the antistatic ceramic component for semiconductor manufacturing equipment according to the present invention contains 10 to 20 parts by weight of auxiliary materials based on 100 parts by weight of the main material consisting of at least one metal oxide, which is the main raw material of the ceramic parts. It is further included as a raw material, and the main material consisting of 65 to 75% by weight of Al ₂ O ₃ and 25 to 35% by weight of a conductive metal oxide is included in the input raw material together with the auxiliary materials.

In this case, the conductive metal oxide may be at least one selected from the group consisting of TiO ₂ , Cr ₂ O ₃ , and MnO.

Further, the main material may include 65 to 75 wt% of Al ₂ O ₃ , 15 to 25 wt% of TiO ₂ , 1 to 10 wt% of Cr ₂ O ₃ , and 1 to 10 wt% of MnO.

Meanwhile, the auxiliary material may include at least one of a dispersing agent, an antifoaming agent, and a binder.

At this time, the dispersing agent is an anionic aqueous dispersing agent, a polycarboxylic acid ammonium salt-based dispersing agent,

The antifoaming agent is a polyether-based antifoaming agent,

The binder is preferably a polyethylene glycol (PEG)-based binder.

Moreover, 85 to 91% by weight of the main material, 1 to 5% by weight of the dispersant, 1 to 5% by weight of the antifoaming agent, 3 to 9% by weight of the binder and 1 to 3% by weight of glycerol based on the total weight of the input raw materials it is desirable

At this time, the ceramic component preferably has a specific resistance value of N×10 ⁷ Ω·cm (N is a real number satisfying 1≤N<10).

Meanwhile, the remaining amount of Al ₂ O ₃ may be 60 to 70% by weight and the remaining amount of the metal oxide may be 7 to 18% by weight after plastic working is completed with respect to the total weight of the input raw material.

Meanwhile, the method of manufacturing an antistatic ceramic part for semiconductor manufacturing equipment according to the present invention includes a slurry forming step of forming a slurry by stirring a main material and a sub material together with a solvent according to the present invention; Forming step of processing into a specific shape; And it may be configured to include a firing step of high-temperature firing the molded article that has undergone the molding step.

In this case, after the slurry forming step and before the forming step, a granulation step of preparing the slurry obtained through the slurry forming step in the form of spherical granules may be further included.

On the other hand, the molding step is a pressure molding method, and in addition, the molding step performed by the pressure molding method includes a press pressure molding step for realizing a basic shape and a CIP pressure molding step for equalizing density by applying uniform pressure in the molded product. can do.

On the other hand, the firing step may include a step of putting the molding into a firing furnace; A first temperature raising step of gradually raising the temperature of the sintering furnace from room temperature to 500° C. to 700° C. for 40 to 50 hours; a second temperature raising step of slowly raising the temperature of the firing furnace to 900° C. to 1,100° C. for 40 to 50 hours after the first temperature raising step; a third temperature raising step of gradually raising the temperature of the firing furnace to 1,500° C. to 1,700° C. for 40 to 50 hours after the second temperature raising step; and a temperature lowering step of stopping heating in the firing furnace after the third temperature raising step and lowering the temperature to room temperature for 15 to 30 hours while leaving the molding in the firing furnace.

According to the technical configuration described above, the antistatic ceramic component for semiconductor manufacturing equipment provided according to the present invention has the following effects.

First, there is provided a ceramic component with antistatic properties having a surface resistance of 10 ⁷ Ω·cm level, which hardly accumulates static electricity due to electrostatic charging and has high static attenuation.

Second, ceramic parts having mechanical properties such as Vickers hardness, compressive strength, and bending strength comparable to existing alumina ceramic parts along with the antistatic properties are provided.

Third, according to the characteristic manufacturing method of the present invention, electrical and mechanical properties are uniformly and balanced throughout the part, thereby providing a ceramic part that maintains basic physical properties and guarantees durability and long lifespan even during long-term use.

1 is a photograph of a specimen prepared according to a preferred embodiment of the present invention;
FIG. 2 is a graph measuring electrostatic characteristics of the specimen of FIG. 1 .

Hereinafter, the contents of the above-described antistatic ceramic component for semiconductor manufacturing equipment and the manufacturing method according to the present invention will be described in more detail with reference to specific examples and experimental examples.

Although the use of the antistatic ceramic component for semiconductor manufacturing equipment according to the present invention is specified for semiconductor manufacturing equipment, this is meant as an example of a representative area to which the present invention can be applied, and is not limited to its use, and fine microscopic parts caused by static electricity Of course, it can prevent problems caused by current or spark, and can be applied for parts requiring high mechanical/chemical strength.

Ceramic materials are actively used in various fields due to their high mechanical strength, abrasion resistance, and insulation properties. In particular, in the case of alumina ceramics, whose main material is aluminum oxide, it is highly advantageous in terms of processability and processing cost as well as good quality properties in all industrial fields. It is a widely used material for

The antistatic ceramic component for semiconductor manufacturing equipment according to the present invention also includes a metal oxide based on Al ₂ O ₃ as a main material, and further includes a main material for securing and improving physical properties in other firing processes.

In addition to Al ₂ O ₃ as the main material made of metal oxide, a metal oxide capable of imparting an appropriate degree of electrical conductivity may be included as a raw material in contrast to Al ₂ O ₃ which imparts excessive insulation as an antistatic ability to be described later. In the present invention, these are defined as 'conductive metal oxides'.

Conductive metal oxides that can be applied according to the present invention include TiO ₂ , Cr ₂ O ₃ , MnO, and the like. More materials could be included.

However, the above three materials are components specified through repetitive experiments in consideration of appropriate conductivity and mechanical/chemical properties, and may be regarded as components corresponding to the characteristic configuration of the present invention.

That is, a component containing Al ₂ O ₃ as the maximum component and TiO ₂ , Cr ₂ O ₃ , and MnO added constitutes the main material according to the present invention, and based on 100 parts by weight of the main material, molding and firing processes 10 to 20 parts by weight of additional auxiliary materials capable of imparting advantageous physical properties are included.

The composition of the main material, excluding sub-materials, according to a preferred embodiment of the present invention, Al ₂ O ₃ 65 to 75% by weight, TiO ₂ 15 to 25% by weight, Cr ₂ O ₃ 1 to 10% by weight, MnO 1 to 10% by weight It is preferable to consist of

On the other hand, the auxiliary material preferably includes at least one of a dispersing agent, an antifoaming agent, and a binder. The dispersing agent is applied to a dispersing process and is a material used to improve uniform particle distribution, viscosity reduction, and dispersion stability of the dispersion. , the stability of the dispersion is improved by preventing the dispersed particles from re-aggregating in the slurry formation step to be described later.

Preferably, in the present invention, a polycarboxylic acid ammonium salt-based dispersant, which is an anionic aqueous dispersant, is used in consideration of the final product properties and manufacturing process, and to improve the uniformity of the input slurry in the granulation step, which will be described later.

If bubbles are generated in the step of forming a slurry, which will be described later, physical properties of products to be manufactured thereafter are significantly impaired, and thus bubbles must be removed by mechanical or chemical methods. In the present invention, an antifoaming agent capable of removing bubbles by a chemical method may be included, and it is preferable to add a small amount to remove bubbles.

In the case of antifoaming agents, there are mainly silicone type, mineral oil type, polymer type, etc. In the present invention, the polymer type is mainly applied in consideration of the final product properties and manufacturing process, and a polyether type antifoaming agent is preferably used.

The binder is a material used for uniform and stable bonding between materials such as a slurry formation step to be described later, and a PVA type or PEG type is used as a ceramic binder applicable to the present invention. In order to further facilitate the use, etc., in the present invention, a polyethylene glycol (PEG) system is used in consideration of the final product properties and manufacturing process.

At this time, as mentioned above, the auxiliary material is used in a small amount of about 10 to 20 parts by weight based on 100 parts by weight of the main material, preferably Al ₂ O ₃ , TiO ₂ , Cr ₂ O ₃ , MnO, etc. 85 to 91% by weight of the main material consisting of, 1 to 5% by weight of the dispersant, 1 to 5% by weight of the antifoamer, and 3 to 9% by weight of the binder, the purpose of improving physical properties such as hardness and increasing invasiveness in the manufacturing process It is preferable to further add glycerol (glycerin) in an amount of 1 to 3% by weight, and in the case of the glycerol according to the present invention, the moisture control of the powder in the granulation step to be described later and the pressure transmission to the granules during molding in the molding step are facilitated And, by improving lubricity with the mold (mold), it provides beneficial effects such as facilitating demolding.

On the other hand, the manufacturing method of antistatic ceramic parts for semiconductor manufacturing equipment according to the present invention includes a slurry forming step of forming a slurry by stirring the main material and auxiliary materials according to the present invention together with a solvent, a molding step of processing into a specific shape, and It can be divided into a firing step of high-temperature firing of the molded product that has passed through the molding step.

The slurry forming step is a step of making a kind of dough by stirring the powdery main and auxiliary materials, and in this step, all the materials are mixed.

Since the slurry itself that has gone through the slurry formation step has the properties of a formable dough, it can be directly proceeded to the molding step, but the uniformity of the slurry itself is further increased, and a uniform physical force (pressure or heat) is applied during the manufacturing process such as molding and firing afterwards. It is preferable to further go through a granulation step of processing the slurry obtained in the slurry forming step into a fine spherical granular form so that it can be added.

At this time, by adjusting the size and distribution of the granules, the flowability of the granules in the mold is improved during molding to increase the filling density, which eventually increases the density of the molded product.

As described above, the molding step may be performed by injecting the slurry that has undergone the granulation step into the mold and press molding. At this time, a molded article may be made by one press molding using a press molding device, but a single-axis press in one direction It is preferable to finish the molding by the cold isostatic pressing method (CIP) after the pressure molding is preceded.

The cold isostatic pressing method (CIP) is also similar to the mold press in that molding is performed by pressure, but after the mold press fills the space composed of the mold and the punch with the target material (granules according to the present invention), / Pressing compression molding by narrowing the gap between the lower punches results in non-uniformity, such as the lower part of the molded product being molded with a lower density than the upper part due to friction between the mold or punch and the target material and friction between particles, whereas the cold isostatic pressing method In this case, Pascal's principle is applied, and when hydraulic pressure is applied after being sealed in a molding mold with low shape resistance, the surface of the molded product receives a pressure equal to the hydraulic pressure uniformly and is compression molded without directionality. It is preferable to increase the uniformity of the molded product.

The molded article after molding is put into a sintering furnace after being dried for a certain period of time, and has finished physical properties as a ceramic part through the sintering step.

The firing step includes a step of introducing the molded product into a firing furnace, a first temperature raising step of slowly raising the temperature of the firing furnace from room temperature to 500 ° C to 700 ° C for 40 to 50 hours, and after the first heating step, the temperature of the firing furnace A second temperature raising step of gradually raising the temperature to 900 ° C to 1,100 ° C for 40 to 50 hours, a third temperature raising step of gradually raising the temperature of the sintering furnace to 1,500 ° C to 1,700 ° C for 40 to 50 hours after the second temperature raising step and a temperature lowering step of stopping heating in the firing furnace after the third temperature raising step and lowering the temperature to room temperature for 15 to 30 hours while leaving the molding in the firing furnace.

At this time, the first temperature raising step is a process for firstly removing additives such as dispersants and binders prior to immediately raising the temperature to a high temperature, and about 1/3 of the entire temperature raising step except for the temperature lowering step of gradually lowering the temperature. runs over time

The second temperature raising step is performed to remove residual additives and impurities that were not yet removed in the first temperature raising step, and likewise proceeds for about 1/3 of the entire temperature raising step.

The third temperature raising step is a step for making a firing process for structure densification of a full-scale molded object take place, and proceeds to a high temperature close to 1,700 ° C.

Even after the firing process is finished, the firing furnace is kept closed and cooled slowly to room temperature for about a day to prevent unintended denaturation of properties obtained through firing and to minimize the occurrence of mechanical defects due to rapid cooling. It is preferable to proceed with a cooling temperature lowering step.

On the other hand, as described above, the antistatic ability, which is the main purpose of the present invention, can include two properties. First, a property to prevent static charge from being accumulated on a charging body such as the part according to the present invention, and second, The furnace is a property in which the charged static charge is dissipated, attenuated, and removed within a short time.

It is known that this performance is closely related to the surface resistance of the charging body. For example, the surface resistance can be expressed in Ω·cm, which is a unit of resistivity, and has the following electrostatic characteristics according to the corresponding value.

If the surface resistance is 10 ⁴ Ω·cm or less, the property of the conductor is close to that of the conductor, so the rate of static elimination is fast, and the electrostatic discharge (ESD) phenomenon occurs, increasing the risk of arc generation.

On the other hand, if the surface resistance is 10 ¹² Ω·cm or more, since it is a non-conductor, the generated static electricity is not discharged and the static charge is accumulated, so there is a risk of contamination by static electricity or other static electricity problems.

When the surface resistance is 10 ¹⁰ ~ 10 ¹¹ Ω cm, electrostatic charge is significantly suppressed, but the time for the charged static charge to decay is relatively long. As a result, the charged static charge is discharged as quickly as possible while the charge itself is suppressed as much as possible. As a possible range, it is most preferable that the antistatic ceramic part provided according to the present invention also has a surface resistance in the range of 10 ⁶ to 10 ⁹ Ω·cm in relation to the above-described antistatic and static electricity elimination properties.

The antistatic ceramic part according to the present invention manufactured through the above components and the manufacturing process has mechanical properties such as mechanical strength and abrasion resistance compared to conventional alumina ceramics, as well as static charge is not charged and has excellent static attenuation ability. It has excellent anti-blocking ability, so it can be provided optimized for application as a component in a semiconductor manufacturing process.

Hereinafter, the above configuration is supported and the effect is more clearly clarified through experimental examples such as manufacturing and testing of antistatic ceramic part samples manufactured according to a preferred embodiment of the present invention.

Experimental Example 1: Preparation of Ceramic Specimens

Input ingredient (product name) Ingredient ratio (% by weight) main raw material Al ₂ O ₃ 61.6 TiO ₂ 17.6 Cr ₂ O ₃ 4.4 MnO 4.4 supplementary material dispersant ELEXEL DS-540 2.0 antifoam SN-DEFOAMER 180 2.0 bookbinder HS-BD 20A 6.0 glycerol glycerol 2.0 entire 100.0

Powdery metal oxide was used as the main material, and products sold by Novco Korea were purchased and used for the dispersant, defoamer, and binder used as auxiliary materials.

As an auxiliary material, ELEXEL DS-540 was used as an ammonium salt-based dispersant for the dispersant, SN-DEFOAMER 180, a polyether-based antifoamer, and HS-BD 20A, a PEG-based binder among ceramic binders, were used as the antifoaming agent, and liquid glycerol (glycerin ) was further added.

After preparing a slurry by stirring the above components, granulation was performed by performing powder adjustment using a granulator in order to ensure ease of molding and uniformity of physical properties.

After press molding the granulated slurry, molding was finished through a pressure homogenization process using a CIP molding machine according to a cold isostatic pressure pressing method.

At this time, the press molding was performed at a pressure of 1.0 t/cm ² and a CIP pressure of 1.8 t/cm ² .

Afterwards, the properly dried molded article was placed in an electric firing furnace and fired. The process is as follows.

- Room temperature ~ 600℃ 1st temperature increase: 48 hours

- 600℃ ~ 1,000℃ 2nd temperature increase: 48 hours

- 1,000℃ ~ 1,600℃ 3rd temperature increase: 48 hours

- 1,600℃ ~ room temperature drop: 24 hours (temperature drop gradually in the sintering furnace)

Through the process as described above, five disc-shaped specimens having the shape shown in FIG. 1 were prepared and the following evaluation was conducted.

Experimental Example 2: Evaluation of mechanical properties of ceramic specimens

Psalter Compressive strength (MPa) Bending strength (MPa) Vickers hardness (MPa) One 849 365 1 725.1 2 865 341 1 625.1 3 745 354 1 803.7 4 712 349 1 932.1 5 724 358 1 494.5 average 779 353.4 1 716.1

For the five specimens prepared in Experimental Example 1, the items listed in Table 2 were evaluated using equipment of the Korea Institute of Ceramic Engineering and Technology.

It was performed under test conditions of temperature 23±1° C. and humidity 31±1%.

First of all, the compressive strength was tested by the national standard certification test method KS L 1601 method and averaged 779 MPa for five specimens, and the bending strength was measured by the KS L ISO 14704 method and measured at 353.4 MPa, which is equivalent to normal alumina ceramic products. In addition, the Vickers hardness value related to surface hardness or wear resistance was tested according to the KS L ISO 14705 method and showed a value of 1 716.1 HV0.5.

Among the above evaluation values, the bending strength and Vickers hardness were not significantly different from those of general alumina ceramics, and the compressive strength was somewhat inferior, but it was sufficient to be used as a ceramic component for semiconductor manufacturing equipment, so all mechanical properties were evaluated to be satisfied for commercialization. It became.

Experimental Example 3: Evaluation of electrostatic properties of ceramic specimens

A total of 4 types of anti-static ceramic coated products, including specimen No. 5 randomly selected among the above specimens, a sapphire wafer for comparison, an alumina ceramic material that does not contain conductive metal oxide as the main material, and alumina ceramic coated with Teflon for antistatic ability. In addition to the samples of the present invention, a total of 5 types of samples, including silicon wafers that can be transferred by the parts according to the present invention, were evaluated for static electricity characteristics to confirm antistatic ability.

[Antistatic performance test]

After applying static electricity to the sample using an electrostatic discharge (ESD) tester (NoiseKen, ESD3000), surface static electricity was measured using an electrostatic meter (SIMCO, FMX-004).

After applying static electricity to the surface for 20 seconds, the electrostatic generator was turned off to measure the decay time of static electricity.

- Static electricity: 1kV, applied 20 times per second, then turned off

- Distance between electrostatic generator and electrostatic meter: 40mm

- Distance between sample and electrostatic meter: 25.4mm

As a result of the test, it was measured as shown in the graph of FIG. 2 .

In the case of sapphire wafers, alumina (Al ₂ O ₃ ) is a crystal grown as a single crystal at a high temperature of 2000 degrees Celsius or higher and is used for LED lights. While showing a tendency

In the case of the Teflon-coated commercial product manufactured for antistatic purposes, the sample 5 manufactured through Experimental Example 1 of the present invention, and the silicon wafer, it was confirmed that almost no static charge was accumulated, and that the static charge was quickly attenuated when the static generator was turned off. I was able to confirm.

Moreover, through the graph on the right, which enlarges the circle of the left graph of FIG. 2, in the case of the ceramic specimen according to the present invention, it has almost the same electrostatic characteristics as a silicon wafer that can be a transfer object in the semiconductor manufacturing process, so it is suitable for antistatic It was confirmed that, when compared to Teflon-coated products, which are conventional antistatic products, it was confirmed that the degree of static charge was rather superior.

[Surface resistance measurement]

The surface electrical resistance of specimen 5 was measured using a 152-1-CE surface resistance meter from TREK.

The surface was partitioned and electrical resistance was measured at three locations. For precise experiments, the resistance values were measured before and after wiping the surface with acetone.

point Before surface wipe (Ω cm) After surface wipe (Ω cm) One 8.70 E7 8.94 E 7 2 8.61 E7 8.08 E7 3 8.24 E7 7.79 E 7

As a result of the measurement, it was confirmed that there was no change in the resistance value before and after wiping the surface, and that uniform surface resistance values corresponding to the level of 10 ⁷ Ω·cm were measured at all three points.

Experimental Example 4: Component Analysis of Ceramic Specimens

After plastic processing, the remaining components were analyzed through wet analysis and instrumental analysis using ICP-OES (Perkinelmer OPTIMA 8300DV) equipment under the test conditions of temperature 17 ± 2 ℃ and humidity 35 ± 5%, the results shown in Table 4 below was derived.

ingredient SiO ₂ Al ₂ O ₃ Fe ₂ O ₃ TiO ₂ CaO MgO Na ₂ O _K2O MnO ZrO ₂ CoO Cr ₂ O ₃ La ₂ O ₃ Ignition loss weight% 0.16 65.1 16.3 1.90 0.16 0.02 0.08 0.03 1.92 0.32 1.91 8.65 2.81 0.55

It is understood that the results shown in Table 4 were derived by reflecting the auxiliary materials and manufacturing process conditions (pressure, temperature, etc.) added during the manufacturing process compared to the input raw materials. perceived to be one.

As described above, the antistatic ceramic parts manufactured according to the technical idea of the present invention have excellent mechanical and chemical properties and excellent antistatic properties required for semiconductor process parts, etc., and are particularly suitable for semiconductor process parts. In particular, since it is implemented as a physical property of the material itself of the part, it has an additional advantage of having excellent durability and lifespan with little change in physical properties due to long-term use even when compared to conventional antistatic coating products.

As described above, the present invention has been described in detail through preferred examples and experimental examples. For those skilled in the art, these specific techniques are only preferred embodiments, thereby limiting the scope of the present invention. It will be clear that it is not. Accordingly, the substantial scope of the invention will be defined by the appended claims and their equivalents.

Claims (15)

Further comprising 10 to 20 parts by weight of auxiliary materials as raw materials based on 100 parts by weight of the main material composed of at least one metal oxide, which is the main raw material of the ceramic part,
The main material composed of 65 to 75% by weight of Al ₂ O ₃ , 15 to 25% by weight of conductive metal oxide TiO ₂ , 1 to 10% by weight of Cr ₂ O ₃ , and 1 to 10% by weight of MnO is added to the input raw material together with the auxiliary materials. Antistatic ceramic components for semiconductor manufacturing equipment, including
delete delete According to claim 1,
The auxiliary material is an antistatic ceramic component for semiconductor manufacturing equipment, characterized in that it contains at least one of a dispersing agent, an antifoaming agent, and a binder.
According to claim 4,
The dispersing agent is an antistatic ceramic component for semiconductor manufacturing equipment, characterized in that it is a polycarboxylic acid ammonium salt-based dispersing agent, which is an anionic aqueous dispersing agent.
According to claim 4,
The antifoaming agent is a polyether-based antifoaming agent, characterized in that, antistatic ceramic parts for semiconductor manufacturing equipment
According to claim 4,
Characterized in that the binder is a polyethylene glycol (PEG)-based binder, antistatic ceramic parts for semiconductor manufacturing equipment
According to claim 4,
85 to 91% by weight of the main material, 1 to 5% by weight of the dispersant, 1 to 5% by weight of the antifoaming agent, 3 to 9% by weight of the binder and 1 to 3% by weight of glycerol with respect to the total weight of the input raw material antistatic ceramic parts for semiconductor manufacturing equipment
According to claim 8,
Antistatic ceramic component for semiconductor manufacturing equipment, characterized in that the resistivity value is N×10 ⁷ Ω cm
(N is a real number that satisfies 1≤N＜10)
According to claim 1,
Antistatic ceramic for semiconductor manufacturing equipment, characterized in that the remaining amount of Al ₂ O ₃ is 60 to 70% by weight and the remaining amount of the metal oxide is 7 to 18% by weight after plastic working is completed with respect to the total weight of the input raw material part
delete delete delete delete delete

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