KR102500754B1 - Complex Biometrics sensor comprising color conversion layer - Google Patents

Abstract

The present invention provides a complex biometric sensor capable of simultaneously sensing a fingerprint and a vein. The sensor includes a substrate including a light emitting area, a first light receiving area, and a second light receiving area; a light emitting unit disposed adjacent to the substrate in the light emitting region; a color conversion layer disposed on the substrate in the light emitting region and vertically overlapping the light emitting part; a first light receiving layer disposed on the substrate in the first light receiving area; and a second light-receiving layer disposed on the substrate in the second light-receiving region, wherein the light emitting unit generates light of a first wavelength, and the color conversion layer receives light of the first wavelength and generates light of the first wavelength. and emits light of a second wavelength, the first light-receiving layer detects light of the first wavelength, and the second light-receiving layer detects light of the second wavelength.

Description

Complex biometrics sensor comprising color conversion layer}

The present invention relates to a biometric sensor, and more particularly, to a composite biometric sensor including a color conversion layer.

The biometric technology using fingerprints was first used commercially in 1968 by a securities company in the United States. Fingerprint recognition became possible to electronically record fingerprint information as the Live-Scan system was developed in the late 1960s. Based on the Live-Scan system, a technology that can database and automatically identify fingerprint information has been researched and developed. Fingerprint recognition technology compares fingerprint image information to be authenticated with pre-registered feature fingerprints based on each individual's unique pattern and characteristics to determine whether or not the person is a person. Such biometric technology is a technology that identifies or authenticates an individual by extracting physical and behavioral characteristics of a person with an automated device, and is named biometric technology or biomatrix.

The vein recognition sensor technology is a biometric recognition technology that extracts a vein pattern of a finger or a vein pattern unique to each individual. When near-infrared rays pass through a living body, a technology that can extract a specific vein pattern through a change in light characteristics by hemoglobin in the blood is being applied.

An object to be solved by the present invention is to provide a complex biometric sensor capable of simultaneously sensing a fingerprint and a vein.

A composite biometric sensor according to embodiments of the present invention for solving the above problems includes a substrate including a light emitting area, a first light receiving area, and a second light receiving area; a light emitting unit disposed adjacent to the substrate in the light emitting region; a color conversion layer disposed on the substrate in the light emitting region and vertically overlapping the light emitting part; a first light receiving layer disposed on the substrate in the first light receiving area; and a second light-receiving layer disposed on the substrate in the second light-receiving region, wherein the light emitting unit generates light of a first wavelength, and the color conversion layer receives light of the first wavelength and generates light of the first wavelength. and emits light of a second wavelength, the first light-receiving layer detects light of the first wavelength, and the second light-receiving layer detects light of the second wavelength.

The color conversion layer may include at least one of a quantum dot material, a phosphor material, and a phosphorescent material.

The first wavelength may be shorter than the second wavelength, and the first light-receiving area may be disposed between the second light-receiving area and the light-emitting area.

Heights of lower surfaces of the color conversion layer, the first light-receiving layer, and the second light-receiving layers may be the same.

The complex biometric sensor includes first source/drain patterns disposed on the substrate and in contact with the first light-receiving layer; second source/drain patterns disposed on the substrate and in contact with the second light-receiving layer; and dummy source/drain patterns disposed on the substrate and in contact with the color conversion layer.

The dummy source/drain patterns may be electrically floated.

The first wavelength may be one of visible light wavelengths, and the second wavelength may be a near infrared or infrared wavelength.

Preferably, the first wavelength may be 400 to 500 nm, and the second wavelength may be 600 to 1000 nm.

The complex biometric sensor may further include a recess area formed under or above the substrate in the light emitting area, and the light emitting unit may be located in the recess area.

The complex biometric sensor may include an insulating film interposed between the color conversion layer and the substrate, between the first light-receiving layer and the substrate, and between the second light-receiving layer and the substrate; a first light blocking pattern disposed in the insulating layer between the light emitting region and the first light receiving region; and a second light-blocking pattern disposed in the insulating layer between the first light-receiving region and the second light-receiving region.

The first light blocking pattern may extend into the substrate and may be adjacent to a side surface of the light emitting part.

The light emitting unit may include a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer sequentially stacked.

The first light-receiving layer and the second light-receiving layer may each include a first conductive organic layer and a second conductive organic layer forming a PN junction.

The first light-receiving area may surround the light-emitting area, and the second light-receiving area may surround the first light-receiving area.

A first width of the color conversion layer parallel to the first direction may be greater than a second width of the first light receiving layer parallel to the first direction.

According to embodiments of the present invention, a highly integrated complex biometric sensor capable of simultaneously sensing a fingerprint and a vein may be provided.

1 is a plan view of a complex biometric sensor according to embodiments of the present invention.
2 is a cross-sectional view of the complex biometric sensor of FIG. 1 taken along the line II' according to embodiments of the present invention.
3 is a diagram illustrating an operation process of a complex biometric sensor according to embodiments of the present invention.
4 is a cross-sectional view of a complex biometric sensor according to embodiments of the present invention.
5 is a cross-sectional view of a complex biometric sensor according to embodiments of the present invention.
6 is a cross-sectional view of a composite biometric sensor according to embodiments of the present invention.
7 is a cross-sectional view of a complex biometric sensor according to embodiments of the present invention.
8 is a plan view illustrating a disposition relationship among a light-emitting area, a first light-receiving area, and a second light-receiving area in complex biometric sensors according to embodiments of the present invention.

The above objects, other objects, features and advantages of the present invention will be easily understood through the following preferred embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosed content will be thorough and complete and the spirit of the present invention will be sufficiently conveyed to those skilled in the art.

In this specification, when a component is referred to as being on another component, it means that it may be directly formed on the other component or a third component may be interposed therebetween. Also, in the drawings, the thickness of components is exaggerated for effective description of technical content.

Embodiments described in this specification will be described with reference to cross-sectional views and/or plan views, which are ideal exemplary views of the present invention. In the drawings, the thicknesses of films and regions are exaggerated for effective explanation of technical content. Accordingly, the shape of the illustrative drawings may be modified due to manufacturing techniques and/or tolerances. Therefore, embodiments of the present invention are not limited to the specific shapes shown, but also include changes in shapes generated according to manufacturing processes. For example, an etched region shown at right angles may be round or have a predetermined curvature. Accordingly, the regions illustrated in the drawings have attributes, and the shapes of the regions illustrated in the drawings are intended to illustrate a specific shape of a region of a device and are not intended to limit the scope of the invention. Although terms such as first and second are used to describe various elements in various embodiments of the present specification, these elements should not be limited by these terms. These terms are only used to distinguish one component from another. Embodiments described and illustrated herein also include complementary embodiments thereof.

Terminology used herein is for describing the embodiments and is not intended to limit the present invention. In this specification, singular forms also include plural forms unless specifically stated otherwise in a phrase. The terms 'comprise' and/or 'comprising' used in the specification do not exclude the presence or addition of one or more other elements.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

1 is a plan view of a complex biometric sensor according to embodiments of the present invention. 2 is a cross-sectional view of the complex biometric sensor of FIG. 1 taken along the line II' according to embodiments of the present invention.

Referring to FIGS. 1 and 2 , a complex biometric sensor 100 according to embodiments of the present invention includes a substrate 1 . The substrate 1 may include a light emitting region ER, a first light receiving region RR1 and a second light receiving region RR2 arranged along a first direction X.

The first light-receiving region RR1 may be disposed between the second light-receiving region RR2 and the light-emitting region ER. The substrate 1 may include at least one of glass, polyimide, and polyethylene naphthalene (PEN).

A first gate electrode 3a and a second gate electrode 3b may be disposed on the substrate 1 in the first light receiving region RR1 and the second light receiving region RR2, respectively. The first gate electrode 3a and the second gate electrode 3b may be formed of metal or a conductive material.

An upper surface of the substrate 1 , the first gate electrode 3a and the second gate electrode 3b may be covered with a first insulating layer 5 . The first insulating layer 5 is a precursor of silicon oxide (SiO ₂ ) such as polysilazane, polysiloxane, tetraethyl orthosilicate, or aluminum oxide (Al ₂ O ₃ ) such as trimethylaluminium. It may be formed by printing a precursor, or a solution containing a precursor of an oxide having good insulating properties such as zirconium oxide (ZrO ₂ ) or titanium oxide (TiO ₂ ), drying it, and heat-treating it.

First source/drain patterns 7a spaced apart from each other may be disposed on the first insulating layer 5 in the first light receiving region RR1 . Second source/drain patterns 7b spaced apart from each other may be disposed on the first insulating layer 5 in the second light receiving region RR2 . Dummy source/drain patterns 7d spaced apart from each other may be disposed on the first insulating layer 5 in the emission region ER. A voltage may not be applied to the dummy source/drain patterns 7d. The dummy source/drain patterns 7d may be electrically floated. The first source/drain patterns 7a, the second source/drain patterns 7b, and the dummy source/drain patterns 7d may be formed of metal or a conductive material.

A color conversion layer 9 may be disposed between the dummy source/drain patterns 7d. The color conversion layer 9 may simultaneously contact the first insulating layer 5 and the dummy source/drain patterns 7d. The color conversion layer 9 may include at least one of a quantum dot material, a phosphor material, and a phosphorescent material. In the color conversion layer 9, a color conversion phenomenon may occur through energy transfer using a photo luminescence (PL) characteristic. When the content/composition of the materials constituting the color conversion layer 9 is adjusted and/or the thickness of the color conversion layer 9 is adjusted, the conversion efficiency of the wavelength of light passing through the color conversion layer 9 increases. can be regulated. Accordingly, in a predetermined thickness or content/composition, the color conversion layer 9 may receive light of the first wavelength λ1 and simultaneously emit light of the first wavelength λ1 and light of the second wavelength.

A first light receiving layer 11 may be disposed between the first source/drain patterns 7a. The first light receiving layer 11 may simultaneously contact the first insulating layer 5 and the dummy source/drain patterns 7a. The first gate electrode 3a, the first source/drain patterns 7a, and the first light receiving layer 11 may constitute a first photo transistor TR1.

A second light receiving layer 13 may be disposed between the second source/drain patterns 7b. The second light receiving layer 13 may simultaneously contact the first insulating layer 5 and the dummy source/drain patterns 7b. The second gate electrode 3b, the second source/drain patterns 7b, and the second light receiving layer 13 may constitute a second photo transistor TR2.

The first light-receiving layer 11 and the second light-receiving layer 13 may absorb light to generate charges such as holes and electrons. The first light-receiving layer 11 and the second light-receiving layer 13 may be formed of, for example, copper phthalocyanine or pentacene.

The first width W1 of the color conversion layer 9 parallel to the first direction X is equal to the second width W2 of the first light receiving layer 11 parallel to the first direction X. can be bigger The first width W1 of the color conversion layer 9 parallel to the first direction X is the third width W3 of the second light receiving layer 13 parallel to the first direction X. can be bigger The second width W2 may be substantially equal to the third width W3.

The color conversion layer 9 , the first light receiving layer 11 and the second light receiving layer 13 may be covered with a second insulating layer 15 . The second insulating layer 15 includes the dummy source/drain patterns 7d, the first source/drain patterns 7a and the second source/drain patterns 7b, and a second exposed layer between them. 1 can be in contact with the insulating film 5 at the same time. The second insulating layer 15 may be formed of the same/similar material as the first insulating layer 5 .

The second insulating layer 15 may be covered with a first protective layer 17 . A light emitting part 19 may be attached to the lower surface of the substrate 1 in the light emitting region ER. The light emitting unit 19 may be, for example, an organic light emitting diode. The lower surface of the substrate 1 in the first light receiving region RR1 and the second light receiving region RR2 may be covered with a second protective layer 21 . The first protective layer 17 and the second protective layer 21 may be formed of the same/similar material as the first insulating layer 5 .

The complex biometric sensor 100 can simultaneously recognize a fingerprint and a vein.

3 is a diagram illustrating an operation process of a complex biometric sensor according to embodiments of the present invention.

Referring to FIG. 3 , the light emitting unit 19 may generate light of a first wavelength λ1. The color conversion layer 9 may receive light of the first wavelength λ1 and simultaneously emit light of the first wavelength λ1 and light of the second wavelength. The first wavelength λ1 may be shorter than the second wavelength λ2. As a specific example, the first wavelength λ1 may be any one of visible light wavelengths. The second wavelength λ2 may be a near infrared or infrared wavelength. The first wavelength λ1 may be preferably 400 to 500 nm. The second wavelength λ2 may be preferably 600 nm to 1000 nm. The light of the first wavelength λ1 may be reflected from the skin surface and incident to the first light-receiving layer 11 due to characteristics of a short wavelength. As a result, charges may be generated in the first light receiving layer 11 . Accordingly, the first phototransistor TR1 can recognize the fingerprint 301 of the finger 300, for example.

The light of the second wavelength (λ2) can penetrate into blood vessels (for example, the vein 303) in the skin due to the long wavelength characteristic, and the light of the second wavelength (λ2) reflected therefrom It may be incident on the light receiving layer 13 . As a result, charges may be generated in the second light receiving layer 13 . Accordingly, the second phototransistor TR2 can recognize the vein 303 of the finger 300, for example.

In this way, the complex biometric sensor 100 according to the present invention can detect the fingerprint 301 and the vein 303 at the same time.

4 is a cross-sectional view of a complex biometric sensor according to embodiments of the present invention.

Referring to FIG. 4 , the complex biometric sensor 101 according to the present example does not include the second protective layer 21 . Instead, a recessed region 1r may be disposed under the substrate 1 in the light emitting region ER, and the light emitting part 19 may be positioned in the recessed region 1r. Other structures and operating processes may be the same/similar to those described with reference to FIGS. 1 to 3 .

5 is a cross-sectional view of a complex biometric sensor according to embodiments of the present invention.

Referring to FIG. 5 , the complex biometric sensor 102 according to the present example may further include a first light blocking pattern 8 disposed in the first insulating layer 5 . The first light blocking pattern 8 may be disposed between the light emitting region ER and the first light receiving region RR1 and between the first light receiving region RR1 and the second light receiving region RR2. In addition, the complex biometric sensor 102 may further include a second light blocking pattern 18 disposed between the light emitting unit 19 and the second protective layer 21 . The first light blocking pattern 8 and the second light blocking pattern 18 may be formed of a metal that does not transmit light or a resin material containing black pigment. The first light blocking pattern 8 may prevent the light generated from the light emitting part 19 from entering the first light receiving layer 11 and the second light receiving layer 13 through the first insulating film 5. there is. The second light blocking pattern 18 prevents the light generated from the light emitting part 19 from entering the first light receiving layer 11 and the second light receiving layer 13 through the second passivation layer 21 . can The first light-shielding pattern 8 and the second light-shielding pattern 18 prevent interference of unwanted light, so that only a desired image can be sensed.

6 is a cross-sectional view of a composite biometric sensor according to embodiments of the present invention.

Referring to FIG. 6 , in the composite biometric sensor 103 according to the present example, a recessed region 1r may be formed by partially recessing an upper portion of the substrate 1 in the light emitting region ER. The light emitting part 19 may be disposed in the recess region 1r. The first light-blocking pattern 8 may be disposed in the first insulating layer 5 between the first light-receiving region RR1 and the second light-receiving region RR2. The second light-blocking pattern 18 may be disposed in the first insulating layer 5 between the first light-receiving region RR1 and the light-emitting region ER. The second light blocking pattern 18 may be interposed between the sidewall of the recess region 1r and the light emitting part 19 . That is, the second light blocking pattern 18 may be interposed between the substrate 1 and the light emitting part 19 . A lower surface of the first light blocking pattern 8 may be higher than a lower surface of the second light blocking pattern 18 . The first light blocking pattern 8 and the second light blocking pattern 18 transmit light generated from the light emitting part 19 to the first light receiving layer 11 through the substrate 1 and the first insulating film 5. ) and incident on the second light receiving layer 13 can be prevented.

7 is a cross-sectional view of a complex biometric sensor according to embodiments of the present invention.

Referring to FIG. 7 , the complex biometric sensor 104 according to the present example includes a substrate 50 . The substrate 50 may include a light emitting region ER, a first light receiving region RR1 and a second light receiving region RR2. The first light-receiving region RR1 may be disposed between the second light-receiving region RR2 and the light-emitting region ER. The substrate 50 may include at least one of glass, polyimide, and polyethylene naphthalene (PEN).

Subsequently, a unit light emitting device ULD may be disposed in the light emitting region ER of the substrate 50 . The unit light emitting device ULD may be referred to as an organic light emitting diode. A first unit light receiving element UPD1 may be disposed in the first light receiving region RR1 of the substrate 50 . A second unit light receiving element UPD2 may be disposed in the second light receiving region RR2 of the substrate 50 .

The unit light emitting device ULD includes a first electrode 53, a hole injection layer 55, a hole transport layer 57, a light emitting layer 59, an electron transport layer 61, and an electron injection layer 63 sequentially stacked. and a second electrode 65. As another example, an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer may be sequentially provided between the first electrode 53 and the second electrode 65 . For simplicity of description below, the first electrode 53, the hole injection layer 55, the hole transport layer 57, the light emitting layer 59, the electron transport layer 61, the first electrode 53 in which the unit light emitting devices ULD are sequentially stacked, It is described as including the electron injection layer 63 and the second electrode 65, but is not limited thereto.

The light emitting layer 59 may be referred to as an organic light emitting layer. The first electrode 53, the hole injection layer 55, the hole transport layer 57, the light emitting layer 59, the electron transport layer 61, the electron injection layer 63 and the second electrode (65) may all be formed of a flexible material.

The first electrode 53 and the second electrode 65 may be a thin film of a metal such as aluminum or copper, or a thin film of a conductive oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO), or a thin film of PEDOT:PSS and the like. can be made of the same organic material. In particular, the second electrode 65 may include a structure in which a metal thin film and a conductive oxide thin film are alternately stacked. In this case, the metal thin film may have a thickness of 5 nm to 15 nm.

The hole injection layer 55 is, for example, N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl- 4,4′-diamine (N,N′-diphenyl-N,N′-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4′-diamine:DNTPD), copper Phthalocyanine compounds such as phthalocyanine, m-MTDATA [4,4',4''-tris (3-methylphenylphenylamino)triphenylamine], NPB (N,N'-di(1-naphthyl)-N,N'-diphenyl Benzidine (N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine)), TDATA, 2-TNATA, Pani/DBSA (Polyaniline/Dodecylbenzenesulfonic acid: polyaniline/dodecylbenzenesulfonic acid), PEDOT/PSS ( Poly(3,4-ethylenedioxythiophene)/Poly(4-styrenesulfonate): Poly(3,4-ethylenedioxythiophene)/Poly(4-styrenesulfonate)), Pani/CSA (Polyaniline/Camphor sulfonicacid: Polyaniline/Camphor sulfonic acid) or PANI/PSS (Polyaniline)/Poly (4-styrenesulfonate): polyaniline)/poly (4-styrenesulfonate)).

The hole transport layer 57 is, for example, a carbazole derivative such as N-phenylcarbazole or polyvinylcarbazole, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1 ,1-biphenyl] -4,4'-diamine (TPD), TCTA (4,4', 4 "-tris (N-carbazolyl) triphenylamine (4,4 ', 4 "-tris (N- carbazolyl)triphenylamine)), NPB (N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine)) etc. can be formed.

The light-emitting layer 59 is PPV (poly (p-phenylenevinylene)), PPP (poly (p-phenylene)), PT (polythiophene), PF (polyfluorene), PFO (poly (9.9-dioctylfluorene), PVK (poly (9.9-dioctylfluorene) -vinylcarbazole)) and its derivative, Alq3 (Tris(8-hydroxyquinolinato)aluminium) or Ir complex compound type Ir(ppy)3 (fac-tris(2-phenylpyridinato)). iridium (III)), or Pt complex compounds, such as PtOEP (2,3,7,8,12,13,17,18-octaethyl-12H, 23H-porphyrine platinum (II)). In addition, a material in which a low molecular weight phosphorescent material is added to PVK (poly(9-vinylcarbazole)), which is a polymer, is also possible.

The electron transport layer 61 may be formed of a quinoline derivative.

The electron injection layer 63 may be formed of LiF, NaCl, CsF, Li2O, BaO, or the like.

Each of the first and second unit light receiving elements UPD1 and UPD2 includes a third electrode 73, a first conductive organic layer 75, a second conductive organic layer 77 and a fourth electrode 79 sequentially stacked. can include The third electrode 73, the first conductive organic layer 75, the second conductive organic layer 77, and the fourth electrode 79 may all be formed of a flexible material. The first conductive organic layer 75 and the second conductive organic layer 77 may constitute the first light receiving layer 11 and/or the second light receiving layer 13 of FIG. 2 .

The third electrode 73 and the fourth electrode 79 are thin films of metals such as aluminum or copper, or thin films of conductive oxides such as indium tin oxide (ITO) or indium zinc oxide (IZO), or PEDOT:PSS and can be made of the same organic material.

The first conductive organic layer 75 and the second conductive organic layer 77 may form a PN junction. That is, the first conductive organic layer 75 and the second conductive organic layer 77 may constitute a photodiode. Alternatively, the photodiode may include the first conductive organic layer 75 and the second conductive organic layer 77 . The first conductive organic layer 75 and the second conductive organic layer 77 may be composed of a conductive organic compound and may have pi conjugation. Any one of the first conductive organic layer 75 and the second conductive organic layer 77 may include a conductive organic compound having a low solid state ionization potential. The other of the first conductive organic layer 75 and the second conductive organic layer 77 may include a conductive organic compound having a high electron drift mobility, and the third electrode 73 or the second conductive organic layer 77 may include a conductive organic compound having high electron drift mobility. It can have an energy level that is easy to inject electrons from the four electrodes 79 .

The conductive organic compound having a low solid state ionization potential is m-MTDATA (4,4′,4′′-Tris[phenyl(m-tolyl)amino]triphenylamine), TDAB (1,3,5-tris(diphenylamino) )benzene), TDATA (4,4',4''-tris(diphenylamino)-triphenylamine), TDAPB (1,3,5-tris[4-(diphenylamino)phenyl]benzene), DPH (4-diphenylaminobenzaldehyde diphenylhydrazone) , CuPc (Copper(II) phthalocyanine), PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate), and conductive polymers.

The conductive organic compound having high electron drift mobility is Tris(8-quinolinolato)aluminum, a boron-containing complex, an oxadiazole-containing Oligo(arylene), an Oligo(arylenevinylene)-based material, and having a benzene or triazine central core. compound, a compound having a central core of 1,3,5-Triphenylbenzene or 2,4,6-Triphenyltriazine, and at least one of Triarylborane and Silole derivatives.

The unit light emitting device ULD may further include a first organic curved body 67 disposed on the second electrode 65 . The first organic curved body 67 exists in plural and may be arranged in an array form. The diameter of one first organic curved body 67 may be 50 nm to 1 μm. The unit light receiving element UPD may further include a second organic curved body 81 disposed on the fourth electrode 79 . The second organic curved body 81 exists in plural and may be arranged in an array form. The diameter of one second organic curved body 81 may be 50 nm to 1 μm. The first and second organic curved surfaces 67 and 81 are benzene, naphthalene, phenanthrene, biphenyl, quinoline, fluorine, phenylpyrazole, phenanthroline, quinodimethane, Quinoxaline, indolocarbazole, carbazole, spirobifluorene, pyridine, thiophene, dibenzothiophene, furan, diazafluoren , benzofuropyridine, triazine, anthracene, pyrene, benzothiazollel, coumarine, quinacridone, phenylpyridine, oxadiazole (oxadiazole), phenoxazine, or derivatives thereof. Specifically, the first and second organic curved bodies 67 and 81 are NPB {N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4 '-diamine}, Alq3 {Tris-(8-hydroxyquinoline) aluminum}, and at least one of derivatives thereof. Each of the first and second organic curved surfaces 67 and 81 may have a width and a height of 50 nm or more and less than 1 μm.

The unit light emitting device ULD may be a top emission organic light emitting diode. The unit light receiving device UPD may be an organic photo diode. Since the first and second conductive organic layers 75 and 77 constituting the PN junction included in the unit light receiving device UPD include an organic compound, they may have flexibility. Since the unit light emitting device ULD, the unit light receiving device UPD, and the substrate may all be formed of a flexible material, the organic electronic device 100 may have flexibility.

Although not shown, transistors for driving the unit light emitting device ULD, the first unit light receiving device UPD1 and the second unit light receiving device UPD2 may be further disposed.

The unit light emitting device ULD, the first unit light receiving device UPD1 and the second unit light receiving device UPD2 may be covered with an insulating layer 83 . A protective layer 87 may be positioned on the insulating layer 83 . A color conversion layer 85 may be interposed between the insulating layer 83 and the protective layer 87 in the emission region ER.

An operation process of the complex biometric sensor 104 may be the same as/similar to that described with reference to FIG. 3 . That is, the unit light emitting device ULD may generate light of the first wavelength λ1. The color conversion layer 85 may receive light of the first wavelength λ1 and simultaneously emit light of the first wavelength λ1 and light of the second wavelength. The first wavelength λ1 may be shorter than the second wavelength λ2. The light of the first wavelength λ1 may be reflected from the skin surface due to its short wavelength and be incident to the first unit light receiving element UPD1. The light of the second wavelength (λ2) penetrates into blood vessels (for example, veins 303) in the skin due to the long wavelength characteristics and is reflected from the veins 303 to enter the second unit light receiving element UPD2. It can be.

8 is a plan view illustrating a disposition relationship among a light-emitting area, a first light-receiving area, and a second light-receiving area in complex biometric sensors according to embodiments of the present invention.

Referring to FIG. 8 , the light emitting regions ER may be disposed to be spaced apart from each other. The first light receiving regions RR1 may be disposed to surround each of the light emitting regions ER1. The second light receiving regions RR2 may be disposed to surround each of the first light receiving regions RR1. A plurality of first phototransistors TR1 or a plurality of first unit light receiving elements UPD1 may be disposed in each of the first light receiving regions RR1. A plurality of second phototransistors TR2 or a plurality of first unit light receiving elements UPD2 may be disposed in each of the second light receiving regions RR2.

Although the embodiments of the present invention have been described with reference to the accompanying drawings, those skilled in the art can implement the present invention in other specific forms without changing its technical spirit or essential features. You will understand that there is Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive.

Claims (18)

a substrate including a light emitting region, a first light receiving region, and a second light receiving region;
a light emitting unit disposed adjacent to the substrate in the light emitting region;
a color conversion layer disposed on the substrate in the light emitting region and vertically overlapping the light emitting part;
a first light receiving layer disposed on the substrate in the first light receiving area;
a second light receiving layer disposed on the substrate in the second light receiving area;
first source/drain patterns disposed on the substrate and in contact with the first light-receiving layer;
second source/drain patterns disposed on the substrate and in contact with the second light-receiving layer; and
Dummy source/drain patterns disposed on the substrate and in contact with the color conversion layer,
The light emitting unit generates light of a first wavelength,
The color conversion layer receives light of the first wavelength and emits light of a first wavelength and light of a second wavelength,
The first light-receiving layer detects light of the first wavelength,
The second light-receiving layer detects light of the second wavelength. According to claim 1,
Wherein the color conversion layer includes at least one of a quantum dot material, a phosphor material, and a phosphorescent material. According to claim 1,
The first wavelength is shorter than the second wavelength,
The first light-receiving area is disposed between the second light-receiving area and the light-emitting area. According to claim 1,
Heights of lower surfaces of the color conversion layer, the first light-receiving layer, and the second light-receiving layers are the same as each other. delete According to claim 1,
The dummy source/drain patterns are electrically floating complex biometric sensors. According to claim 1,
The first wavelength is any one of visible light wavelengths,
The second wavelength is a near-infrared or infrared wavelength complex biometric sensor. According to claim 1,
The first wavelength is 400 to 500 nm,
The second wavelength is 600 ~ 1000nm complex biometric sensor. According to claim 1,
Further comprising a recess region formed on the lower part of the substrate or the upper part of the substrate in the light emitting region,
The light emitting unit is located in the recess area. According to claim 1,
an insulating film interposed between the color conversion layer and the substrate, between the first light-receiving layer and the substrate, and between the second light-receiving layer and the substrate;
a first light blocking pattern disposed in the insulating layer between the light emitting region and the first light receiving region; and
The complex biometric sensor further comprises a second light-shielding pattern disposed in the insulating layer between the first light-receiving region and the second light-receiving region. According to claim 10,
The first light blocking pattern extends into the substrate and is adjacent to a side surface of the light emitting unit. According to claim 1
The light emitting unit includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer sequentially stacked. According to claim 1,
The first light-receiving layer and the second light-receiving layer each include a first conductive organic layer and a second conductive organic layer forming a PN junction. According to claim 1,
The first light receiving area surrounds the light emitting area,
The second light receiving area surrounds the first light receiving area. According to claim 1,
A first width parallel to the first direction of the color conversion layer is larger than a second width parallel to the first direction of the first light-receiving layer. a substrate including a light emitting region, a first light receiving region, and a second light receiving region arranged side by side along a first direction;
a light emitting unit disposed adjacent to the substrate in the light emitting region;
a color conversion layer disposed on the substrate in the light emitting region and vertically overlapping the light emitting part;
a first light receiving layer disposed on the substrate in the first light receiving area;
a second light receiving layer disposed on the substrate in the second light receiving area;
first source/drain patterns disposed on the substrate and in contact with the first light-receiving layer;
second source/drain patterns disposed on the substrate and in contact with the second light-receiving layer; and
Dummy source/drain patterns disposed on the substrate and in contact with the color conversion layer,
The light emitting unit generates light of a first wavelength,
The color conversion layer receives the light of the first wavelength and emits light of the first wavelength and light of the second wavelength toward the living body;
The first light-receiving layer detects light of the first wavelength reflected from the surface of the living body;
The second light-receiving layer detects light of the second wavelength reflected from the vein of the living body. 17. The method of claim 16,
The first wavelength is shorter than the second wavelength,
The first light-receiving area is disposed between the second light-receiving area and the light-emitting area. delete

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