KR102481077B1 - Solar Pannel system using Avalanching Nano Particle and the method using it - Google Patents

Abstract

The present invention relates to a solar power generation system utilizing a light avalanche phenomenon and a method using the same. The method comprises the following steps of: preparing a p-type silicon substrate; forming an emitter layer (n+); forming a high-concentration emitter layer (n++); and forming a back surface electric field layer (p++). Therefore, the solar power generation system utilizes a light avalanche effect in which a disproportionately large amount of light is temporarily generated when a material emits light above a critical intensity.

Description

Solar power system using light avalanche and method using it {Solar Pannel system using Avalanching Nano Particle and the method using it}

The present invention relates to a solar power generation system using a light avalanche, and more particularly, to a solar power generation system using a light avalanche using a nonlinear optical effect that emits avalanche photons.

As shown in FIG. 1, since the advent of quantum mechanics, research on nano has been actively conducted.

In particular, when the size of a particle in a semiconductor reaches the nanometer level, it shows different physical properties than when it is in a bulk state, so it is expected to be used in various fields in the future, such as being used in solar arrays.

A nanoparticle is a particle with at least one dimension less than 100 nm, i.e. one ten-millionth of a meter.

It is a particle belonging to the realm of nanotechnology that manipulates molecules or atoms to create new structures, materials, machines, instruments, and devices, and studies their structures.

According to the definition of nanotechnology by the National Science Foundation of the United States, the object covered by nanotechnology must be at least 1 to 100 nm in size. In addition, it must be possible to create nano-sized physical and chemical properties through a process that can fundamentally control them, and must be combined into larger structures.

According to this definition, considering only the size, complexes, DNA, and proteins with several or hundreds of atoms also belong to the nano.

Looking at an example of application of nanoparticles, when conventional nanoparticles are added to existing products, they form a thin layer and exhibit various properties. These properties can be used to apply to existing products.

In this way, understanding the unique physical and chemical properties of nanometer-sized particles can be applied to a wide variety of fields.

However, it is expected to be used in various fields in the future, such as being used in solar arrays, but the invention has never been actually completed.

The present invention has been made to solve the above problems, and provides a solar power generation system utilizing the light avalanche effect using a light avalanche effect in which a disproportionately large number temporarily occurs when a material emits light with a threshold intensity or higher. has a purpose to

In addition, an object of the present invention is to provide a solar power generation system using light avalanche that can be applied to various fields in which the solar array is applied as well as the solar array.

In order to solve the above problems, the present invention includes nanoparticles doped with thulium ions in at least one of an emitter layer, an electrode, and an electric field layer.

An emitter layer, an electrode, and an electric layer are implemented using the ion doping process using the thulium ion.

It is monitored by the average value of the solar energy produced by the solar array for each season or year.

The present invention comprises the steps of preparing a p-type silicon substrate formed by implanting nanoparticles doped with thulium ions and p-type impurity ions; forming an emitter layer (n+) by implanting nanoparticles doped with thulium ions and n-type impurity ions; Nanoparticles doped with thulium ions and high-concentration n-type impurity ions are exposed in a state in which a shadow mask selectively exposes the region where the grid electrode and bus electrode are to be formed on the front side of the substrate and the region where the n-electrode is to be formed on the rear side of the substrate. forming a high-concentration emitter layer (n++) by injection; and implanting nanoparticles doped with thulium ions and high-concentration p-type impurity ions on the rear surface of the substrate through a shadow mask that does not expose the high-concentration emitter layer on the rear surface of the substrate to form a back surface field layer (p++). do.

The thulium ion is 1 part by weight to 8 parts by weight.

It further includes; an ion doping process step using the thulium ion.

The management server stores the energy production for a certain period of time of the photovoltaic array modules received from the photovoltaic array modules in a normal state, and determines the optimal energy production value and malfunction among the weight parts of nanomaterials doped with each thulium ion. Calculate the optimal number that does not occur.

The present invention made as described above can provide a more efficient solar power generation system by using a large number of photons disproportionately generated when a material emits light with a threshold intensity or higher.

In addition, the present invention uses the law of 'Avalanching Nano Particle (ANP)' or "Giant Nonlinear Optical Responses from Photon-Avalanching Nanoparticles" to achieve a plurality of solar power generation processes can be applied to

In addition, the present invention can cause a light avalanche phenomenon even with a weak light intensity LED, so that solar power generation can be usefully used indoors.

In addition, according to the present invention, even when light reflection to the outside increases through light scattering due to uncertain weather conditions, the light absorption rate of the solar module can be maintained almost constant by using a large number of disproportionately generated photons.

1 is a view showing a three-dimensional photograph of platinum nanoparticles according to the prior art.
2 is a single-beam super-resolution image based on avalanche nanoparticles according to an embodiment of the present invention.
3 is a diagram showing a three-step process before, during, and after a landslide occurs according to an embodiment of the present invention.
4 is a 4f ¹² orbital of thulium ion according to another embodiment of the present invention It is an energy level diagram.
5 is a diagram showing a doped nanocrystals avalanche demonstration according to another embodiment of the present invention.
6 is an experimental graph of nanocrystals doped with 8%, 20%, and 100% Tm3+ according to another embodiment of the present invention.
7 is a single-beam super-resolution image diagram based on avalanche nanoparticles according to another embodiment of the present invention.
8 is a line cut graph diagram corresponding to blue-blue lines on images a and b according to another embodiment of the present invention.
9 is a theoretical imaging simulation result diagram according to another embodiment of the present invention.
FIG. 10 is a graph of actual measured (black) imaging resolution line width and simulation graph for a single light avalanche nanoparticle according to the intensity of excitation light according to another embodiment of the present invention.
11 is an image diagram obtained for a sample in which two doped light avalanche nanoparticles are placed at an interval of 300 nm according to another embodiment of the present invention.
12 is a simulation result diagram for experimentally obtained images of g according to another embodiment of the present invention.

In order to fully understand the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the examples described in detail below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shapes of elements in the drawings may be exaggerated to emphasize a clearer explanation. It should be noted that in each drawing, the same members are sometimes indicated by the same reference numerals. In addition, detailed descriptions of well-known functions and configurations that may unnecessarily obscure the subject matter of the present invention are omitted.

The photon avalanching phenomenon used in the present invention is a nonlinear optical phenomenon in which a disproportionately large number of ('avalanche') photons are emitted when a material emits light with a threshold intensity or higher.

The present invention uses the fact that nanocrystals doped with thulium ions can individually generate photon avalanches, thereby increasing the very low photoconversion efficiency of conventional upconversion nanoparticles.

For example, in the prior art, in order to absorb light of low energy multiple times and re-emit it as light of high energy, a high-power laser with very strong light intensity must be used, thereby increasing prices, generating heat, and preventing user blindness. Securing laser safety has been an obstacle to commercialization.

However, in the photovoltaic array module 111 of the solar power generation system using the light avalanche phenomenon according to the present invention, the upconversion nanoparticle light conversion efficiency is increased through an optical chain amplification reaction in the form of multiple absorption-multiple emission.

That is, a photon avalanche, which is a chain amplification reaction of light capable of maximizing the photoconversion efficiency of existing upconversion nanoparticles, occurs in a single nanoparticle in the solar array module 111 .

Upconverting nanoparticles (UCNPs) in the photovoltaic array module 111 consume a portion of the energy as thermal energy after light with high energy is absorbed by the material, and the remaining small energy is converted back into light and emitted. Unlike down-conversion in up-conversion nanoparticles, light with low energy is absorbed multiple times and then combined and converted into light with high energy.

In addition, the upconversion nanoparticles (UCNP) in the solar array module 111 absorb infrared rays of small invisible energy (long wavelength) and convert them into light of high energy (short wavelength) such as visible light. has

The light avalanche phenomenon by the chain amplification reaction of light in the photovoltaic array module 111 is once the light is multi-absorbed by the nanoparticles, and then the optical avalanche is chained like an avalanche or landslide in the atomic lattice structure constituting the nanoparticles. It is a large nonlinear optical phenomenon in the form of multi-absorption-multiple-emission in which the intensity of light is strongly amplified by causing a reaction and multiple emission from nanoparticles.

Through this, very high up-conversion luminous efficiency (light conversion efficiency) can be induced even with a weak light intensity of the level of a laser pointer, which is widely used in everyday life.

Therefore, it can be actively used for various types of solar array modules 111 described below.

FIG. 2 is a diagram showing the mechanism of a photon avalanche (PA) chain amplification reaction inside nanoparticles doped with thulium ions (Tm ³⁺ ).

It also shows the shape of core-shell avalanche nanoparticles that cause light avalanche when the concentration of thulium ions is higher than 8%.

It is also compared with the conventional energy transfer upconversion (ETU) process resulting from ground-state absorption of ytterbium ions (Yb ³⁺ ).

Here, Core (core), Inert Shell (inert shell), respectively. Tm ³⁺ concentration ≥ 8% (Thulium ion doping concentration of 8 percent or more), GSA (Ground State Absorption), ESA (Excited State Absorption: Excited State Light Absorption), Tm ³⁺ -Tm ³⁺ cross- It shows relaxation (cross-stabilization process between thulium ion and thulium ion (stabilization is a relative word of excitation/excitation)).

3 is a diagram showing a three-step process before, during, and after a landslide phenomenon occurs.

The horizontal axis of the graph in FIG. 3 is excitation intensity (excitation light intensity), and the vertical axis of the graph is emission intensity (emission light intensity).

That is, it is a diagram showing a Model plot of Photon Avalanching Giant Nonlinear Optical Response Curve as emission intensity versus excitation intensity.

Summarizing the terms of FIG. 3, each Before threshold (just before the threshold of the light avalanche chain reaction phenomenon), PA (light avalanche period), Saturation (a saturation state of the light avalanche phenomenon, which represents the excessive excitation light intensity period) .

4 is a 4f ¹² orbital of a thulium ion It is an energy level diagram.

R ₁ and R ₂ represent the ground state excitation rate and the excited state excitation rate, respectively, and W ₂ and W ₃ are respectively obtained from the ³ F ₄ energy level and the ³ H ₄ energy level. represents the aggregation rate after relaxation after the stabilization process of

These light absorption and accumulation rates account for radiative and non-radiative pathways, while excluding cross-relaxation or other energy transfer processes. .

To summarize the terms of FIG. 4, GSA (Ground State Absorption: ground state light absorption), ESA (Excited State Absorption: excited state light absorption), cross-relaxation (cross-stabilization process between thulium ion and thulium ion), emission (upward state light absorption) emission of converted light), etc.

At this time, the vertical axis of the graph is 10 ³ cm ^-1 (energy in units of 1,000 wave numbers (one of light energy units)).

5 is a demonstration of nanocrystals doped with 1%, 4%, and 8% Tm ³⁺ (Demonstration of nanoparticle photon avalanching. a, 800 nm emission intensity vs. excitation intensity for 1%, 4%, and 8% Tm3+ -doped nanocrystals).

6 is a diagram of Modifying PA kinetics via ANP shell thickness (Modifying PA kinetics via ANP shell thickness, surface-to-volume ratio, and Tm3+ content).

7 is a single-beam super-resolution image based on avalanche nanoparticles.

Super-resolution Nanoscopy is a nano spectroscopic imaging device with super-resolution that exceeds the diffraction limit of light of 200 nm (blue light) to 500 nm (near infrared ray).

To do this, STED (STimulated Emission Depletion) and PALM (Photo-Activated Localization Microscopy) each have to scan the donut-shaped STED spot superimposed with the confocal spot of the excitation light, or the center of all imaging pixels is computer-generated. The image must be reconstructed like pointillism, a type of painting technique, by taking artificial small dots one by one.

The present invention is a simple confocal imaging scan using only one spot because the light amplified by chain as it is upconverted from the central part of each very small light avalanche nanoparticles around ~25 nm is concentrated very locally and emitted explosively. It was possible to further increase the resolution through ultra-high resolution nanoscopy of 70 nm.

Figure 7 is doped with 8% thulium ions when excited in the saturation regime (saturation regime: 9.9 kWcm ^-2 ) (a) and when excited in the light avalanche regime (PA regime: 7.1 kWcm ^-2 ) (b) It shows an Avalanching Nano Particle (ANP) image.

8 is a line cut corresponding to the blue line on images a and b: the theoretical diffraction limit when 1,064 nm excitation light is focused by an objective lens of N.A. has been

9 is a theoretical imaging simulation result for images a and b, respectively.

10 shows the actual measured (black) imaging resolution line width and the simulated imaging resolution line width (FWHM: Full Width at the Half Maximum) for a single light avalanche nanoparticle according to the intensity of excitation light.

11 is an image obtained for a sample in which two avalanche nanoparticles doped with 8% thulium ions are placed at a distance of 300 nm while gradually decreasing the excitation light intensity from near saturation light intensity to just before the mineslide threshold.

12 is a simulation result of experimentally obtained images.

As shown in FIG. 13A, avalanche nanoparticles are applied between an electrode and an antireflection film of a typical solar panel. In addition, various applications are possible, such as:

As shown in FIGS. 13B and 14, looking at the structure of the solar array manufactured according to the present invention, a front electrode and a rear electrode are provided on the front and rear surfaces, respectively, and the front electrode is provided on the front surface, which is the light receiving surface. Accordingly, the light-receiving area is reduced by the area of the front electrode.

In order to solve the problem of reducing the light receiving area, a back electrode solar array has been proposed. The rear electrode type solar array is characterized by maximizing the light-receiving area of the front surface of the solar array by providing a (+) electrode and a (-) electrode on the rear surface of the solar array.

Such a back electrode solar array is classified into an interdigitated back contact (IBC) type, a point contact type type, an emitter wrap through (EWT) type, a metal wrap through (MWT) type, and the like, depending on the type.

Of these, the MWT type solar array has a structure in which the grid finger of the front grid finger and bus bar is left as it is at the front and the bus bar is moved to the rear, and the grid finger at the front and the bus bar at the rear are They are connected by via holes penetrating the substrate.

Looking at the structure of the MWT-type solar array of FIG. 13B, an emitter layer 102 is provided on the entire surface of a substrate 101, and an anti-reflection film 103 and a front grid electrode 104 are provided on the entire surface of the substrate 101 do.

In addition, an n-electrode 105 and a p-electrode 106 are provided on the rear surface of the substrate 101, and the n-electrode 105 and the front grid electrode ( 104) are electrically connected.

At this time, a coating layer 110 coated with light avalanche nanoparticles is formed between the p-electrode 106 and the substrate 101. However, the location of the coating layer 110 is not limited thereto.

On the other hand, a back surface field (p+) 109 serving to improve the charge collection efficiency is provided under the p-electrode 106, that is, inside the back surface of the substrate. and p-electrode 106 have a structure in contact with each other over the entire surface.

In such an MWT type photovoltaic array, as the back surface layer 109 and the p-electrode 106 contact each other over the entire surface as described above, at the interface between the back surface layer and the p-electrode The recombination rate is increased, which ultimately causes a problem in that the photoelectric conversion efficiency is lowered.

Thus, electron-hole pairs accelerated by light avalanche events are less likely to recombine within the cell's semiconductor material. Due to this decrease in the electron-hole recombination rate, the overall efficiency of the solar cell increases and the power output becomes larger.

A method for manufacturing a MWT-type solar array used in a solar power system using avalanche according to the present invention includes preparing a p-type silicon substrate equipped with via holes, and applying a low concentration of n-type impurity ions on the entire surface of the substrate. Forming a low-concentration emitter layer (n+) by injection, and a high-concentration state with a shadow mask selectively exposing the area where the grid electrode and the bus electrode are to be formed on the front side of the substrate and the area where the n-electrode is to be formed on the back side of the substrate. forming a high-concentration emitter layer (n++) by implanting n-type impurity ions, and implanting high-concentration p-type impurity ions on the rear surface of the substrate through a shadow mask that does not expose the high-concentration emitter layer on the rear surface of the substrate to form a backside electrode Forming a layer (p++), forming an antireflection film on the front surface of the substrate, forming a grid electrode and a bus electrode on the front surface of the substrate, and forming an n-electrode and a p-electrode on the rear surface of the substrate It is done by

At this time, it consists of a plasma generating chamber for generating plasma gas and a thulium ion implantation chamber connected to communicate with the lower side of the plasma generating chamber to form a closed space, and thulium ions are implanted into the inner bottom of the thulium ion implantation chamber. A substrate holder on which a photovoltaic array to be placed is provided, the plasma generating chamber is formed of quartz as an insulator, the discharge electrode is formed as two RF power electrodes and is separated from the outer wall of the plasma generating chamber, and the thulium The ion implantation chamber uses a thulium ion doping device whose surface is formed of oxidized metal and grounded.

In summary, the present invention comprises the steps of preparing a p-type silicon substrate formed by implanting nanoparticles doped with thulium ions (Tm ³⁺ ) and p-type impurity ions; forming an emitter layer (n+) by implanting nanoparticles doped with thulium ions (Tm ³⁺ ) and n-type impurity ions; Thulium ions (Tm ³⁺ ) are doped with nanoparticles and high-concentration forming a high-concentration emitter layer (n++) by implanting n-type impurity ions; and implanting nanoparticles doped with thulium ions (Tm ³⁺ ) and high-concentration p-type impurity ions on the backside of the substrate through a shadow mask that does not expose the high-concentration emitter layer on the backside of the substrate to form a backside electric field layer (p++). It is made including; the step of doing.

As shown in FIGS. 15 and 16, a first layer protection unit 1 comprising polycarbonate; MWT-type photovoltaic array 2 coated with avalanche nanoparticles capable of easily implementing selective emitter and isolation using an ion doping process using thulium ions (Tm ³⁺ ) stacked on the polycarbonate; a 3-1 layer protection unit 3-1 including ethylene vinyl acetate laminated on the MWT type solar array 2 coated with the avalanche nanoparticles; a 3-2 protective layer (3-2) including ethylene vinyl acetate laminated on the upper layer of the 3-1 protective layer (3-1); Layer protection of one of aluminum foil, polyolefin, ethylene vinyl acetate (EVA), polyvinyl butyral (PVB), and silicone resin laminated on the 3-2 layer protection unit 3-2 A fourth layer protection part 4 including a part; includes.

In addition, by applying a honeycomb structure hole to the polycarbonate and ethylene-tetrafluoroethylene covering the MWT type solar array 2, the empty space in the structure is reduced, and a certain level of durability and strength is maintained according to the honeycomb structure, In order to easily use the retroreflected sunlight of the aluminum foil, a polygonal structure pattern including a honeycomb structure is formed on the front surface of the MWT type solar array (2) cell, and the collection distance of electrons through the dense pattern can be made constant.

In addition, the ethylene-tetrafluoroethylene allows the user to select a specific ethylene-tetrafluoroethylene film (ETFE Film) and utilizes the print function to adjust the amount of light transmission according to a specific place and has flexibility, so multiple designs can be produced. .

When the concentration of aluminum (Al) or gallium (Ga) doped in zinc oxide of the MWT type solar array 2 is less than a certain value, light in a long wavelength band is transmitted, or aluminum (Al) or gallium (Ga) The concentration is set to a certain value to transmit light in a short wavelength band, and the polycarbonate can implement a plurality of colors or control the transmission by adding a pigment to transmit 82-92% of light with impact resistance.

In addition, by using the characteristics of the ethylene-tetrafluoroethylene film and the polycarbonate film, it is suitable for flexibility, durability, and weather resistance, so that curved surface construction is easy.

The ethylene-tetrafluoroethylene has durability against chemical damage and wind having a certain air volume, and serves as a heat insulating material in a two- to three-layer structure.

The ethylene vinyl acetate has a VA content of 28 to 33 parts by weight based on 100 parts by weight, and is composed of a structure of -(CH2-CH2)6.14-(CH2-CHAc)-.

The fourth protective layer is inserted between one surface of polycarbonate and the MWT type solar array 2 and between the MWT type solar array 2 and ethylene-tetrafluoroethylene.

The first layer protection unit or the second layer protection unit is TPT (Tedlar/PET/Tedlar), TPE (Tedlar/PET/EVA), TAT (Tedlar/Al foil/Tedlar), TPA One layer of TPAT (Tedlar/PET/Al foil/Tedalr), TPOT (Tedlar/PET/Oxide/Tedlar), PAP (PEN/Al foil/PET) or Polyester made up of protection

The third protective layer includes TPT (Tedlar/PET/Tedlar), TPE (Tedlar/PET/EVA), TAT (Tedlar/Al foil/Tedlar), and TPT (Tedlar/PET/EVA). PET/Al foil/Tedalr), Tedlar/PET/Oxide/Tedlar (TPOT), PAP (PEN/Al foil/PET), or Polyester layer protection.

The fourth protective layer includes polyvinyl butyral (PVB), silicone resin, TPT (Tedlar/PET/Tedlar), TPE (Tedlar/PET/EVA), TAT (Tedlar) /Al foil/Tedlar), TPAT (Tedlar/PET/Al foil/Tedalr), TPOT (Tedlar/PET/Oxide/Tedlar), PAP (PEN/Al foil/PET) or It consists of one layer protection part of polyester.

As shown in FIG. 17, the present invention determines the operating state and deterioration state of the solar module with data such as generation amount, solar radiation, and solar module temperature for each solar array channel. Failure and deterioration state of the solar module in a simple and efficient manner. A photovoltaic power generation method having a diagnostic function can be provided.

The monitoring unit ( 112) to display data on the display unit 113.

At this time, the monitoring unit 112 uses Equation 1 as the amount of power generated and the average amount of power generated for each channel of the solar array to obtain a 'coefficient of variation of the amount of power generation' for each channel of the solar array.

(Where CV _n is the ‘coefficient of variation of generation amount’ of the nth channel of the solar array, P _n is the amount of power generation of the nth channel of the solar array, and P _avr is the average amount of power generation)

Compensated Performance Ratio (CP), which is obtained from Equation 2 considering the temperature correction rate, is calculated from the power generation data for each photovoltaic array channel and the photovoltaic power generation state data.

(Where CP _n is the 'correction coefficient of performance' of the nth channel of the solar array, P _n is the power generation of the nth channel of the solar array, P _nom is the rated power of the solar array, T _m is the module temperature, and IR _stc is the standard test 1,000 W/㎡ as solar radiation under the condition, and 0.005/℃ is applied for α as the temperature fluctuation rate)

As shown in FIG. 18, in the variation coefficient of power generation, nanomaterials doped with thulium ions are 1 part by weight, 2 parts by weight, 4 parts by weight, and 8 parts by weight based on 100 parts by weight of the silicon substrate, respectively, for the photovoltaic array. The temperature sensor unit in the modules 111 measures the amount of production of each photovoltaic array module 111 for a certain period of time and transmits it to the management server 150 in real time or at a preset time after storage.

The management server 150 stores energy production (an average value of energy produced) of the photovoltaic array modules 111 received from the photovoltaic array modules 111 in a normal state for a certain period of time.

For example, the thulium ion-doped nanomaterial is daily, monthly, spring (March-May), summer (June-August), 1, 2, 4, 8 parts by weight per 100 parts by weight of the silicon substrate, respectively. It is monitored by the monitoring unit 112 that measures and monitors the average value of solar energy production per season in autumn (September to November) and winter (December to February) or by year.

In addition, the reference temperature change value is calculated by calculating a daily average value measured for 365 days, a monthly average value measured on a monthly basis and averaged, and a seasonal average value measured on a seasonal basis, then calculated daily, monthly, or every season By changing the value and applying it, the accuracy of the measured temperature change is improved.

Regarding the average value of production energy monitored by the monitoring unit 112, when the average value of production energy of the solar array module 111 has a change within a certain range from the target amount, the solar array module 111 is considered to operate normally. and if it is out of the range of the target amount, it is determined that it malfunctions.

Accordingly, the management server 150 may calculate an optimal value for energy production and an optimal value for preventing malfunction among the parts by weight of each thulium ion-doped nanomaterial.

In addition to this, the present invention includes a carboxyl ester-based dispersant represented by the following formula (1) as the n-electrode 105 and the p-electrode 106 of the photovoltaic array coated with nanoparticles, and the nanoparticles are 10 to 40 parts by weight are used.

The nanoparticles are Tm ³⁺ , ZnO, CuO, BaCO ₃ , Bi ₂ O ₃ , B ₂ O ₃ , CaCO ₃ , CeO ₂ , Cr ₂ O ₃ , Fe ₂ O ₃ , Ga ₂ O ₃ , In ₂ O ₃ , Li ₂ CO ₃ , LiCoO ₂ , MgO, MnCO ₃ , MnO ₂ , Mn ₃ O4, Nb ₂ O ₅ , PbO, Sb ₂ O ₃ , SnO ₂ , SrCO ₃ , Ta ₂ O ₅ , TiO ₂ , BaTiO ₃ , V ₂ O ₅ , WO ₃ and It may be any one of ZrO ₂ .

111: solar array
112: monitoring unit
113: display unit

Claims (4)

preparing a p-type silicon substrate formed by implanting nanoparticles doped with thulium ions and p-type impurity ions; forming an emitter layer (n+) by implanting nanoparticles doped with thulium ions and n-type impurity ions; Nanoparticles doped with thulium ions and high-concentration n-type impurity ions are exposed in a state in which a shadow mask selectively exposes the region where the grid electrode and bus electrode are to be formed on the front side of the substrate and the region where the n-electrode is to be formed on the rear side of the substrate. forming a high-concentration emitter layer (n++) by injection; and implanting nanoparticles doped with thulium ions and high-concentration p-type impurity ions on the rear surface of the substrate through a shadow mask that does not expose the high-concentration emitter layer on the rear surface of the substrate to form a back surface field layer (p++). is done by
A monitoring unit (112 ) is monitored at,
While the monitoring unit 112 monitors the average value of energy production, it is determined that the solar array module 111 operates normally when the average value of energy production of the solar array module 111 has a change within a certain range from the target amount. And a method using a solar power generation system using a light avalanche, characterized in that it is determined that it malfunctions when it is out of the range of the target amount. delete The method of claim 1,
A method using a solar power generation system using a landslide phenomenon, characterized in that the emitter layer, the electrode, and the electric layer are implemented using the ion doping process using the thulium ion.
delete

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