KR102475299B1 - Wafer scanning method and apparatus, and plasma nozzle and chamber used in the apparatus - Google Patents

Abstract

A wafer scanning apparatus and method are disclosed. A wafer scanning apparatus according to an embodiment includes: a chamber in which a wafer to be scanned is loaded; and a plasma nozzle for generating plasma in the chamber and supplying it to the wafer. The plasma nozzle performs etching of the surface layer of the wafer and scanning of the wafer having an etched surface layer using the plasma.

Description

Wafer scanning method and apparatus, and plasma nozzle and chamber used in the apparatus

The following embodiments relate to wafer scanning methods and apparatuses, and plasma nozzles and chambers used in the apparatuses.

Silicon wafers are widely used as substrates for semiconductor devices. In a semiconductor device, since metal contamination of a wafer causes deterioration of device performance, silicon wafers with less metal contamination are required. In order to provide a silicon wafer with less metal contamination, the metal contamination of the silicon wafer is analyzed and a good product is judged based on the analysis result, and the metal contamination is reduced in the silicon wafer manufacturing process as necessary based on the analysis result. It is preferable to carry out treatment.

Analysis of metal contamination of the silicon wafer may be performed by disassembling and etching the surface layer of the silicon wafer and scanning metal components in the disassembling and etching residue.

At this time, the surface layer of the silicon wafer is decomposed and etched, the liquid phase decomposition method in which the surface layer of the silicon wafer is brought into contact with a decomposition and etching solution such as hydrofluoric acid (HF), and the surface layer of the silicon wafer is decomposed with aerosol hydrofluoric acid A gaseous phase decomposition method in which decomposition is performed by contacting with the same decomposition and etching gas is known.

However, since conventional decomposition and etching methods use hydrofluoric acid-based decomposition and etching solutions or decomposition and etching gases, hydrofluoric acid leakage accidents may occur, and environmental contaminants are exhausted and disposed of through chamber cleaning after wafer scanning. There are downsides to having to do.

Accordingly, the following embodiments are intended to propose a technique for solving the disadvantages and problems of existing decomposition and etching methods.

Technical problems to be achieved by the embodiments include problems in that hydrofluoric acid leakage accidents may occur due to the use of hydrofluoric acid-based decomposition and etching solutions or decomposition and etching gases, and exhaustion and disposal of environmental pollutants through cleaning in the chamber after wafer scanning. It is to propose a technique to solve the disadvantages that need to be done.

In more detail, embodiments propose a wafer scanning method and apparatus for etching a surface layer of a wafer and scanning a wafer having the etched surface layer using plasma, and a plasma nozzle and chamber used in the apparatus. .

In addition, one embodiment is a wafer scanning method and apparatus for simultaneously generating and supplying first plasma and second plasma and linearly and rotationally moving the wafer in order to etch and scan both the upper surface and the edge of the wafer. , and suggest a plasma nozzle and chamber used in the device.

In addition, one embodiment is OES (Optical Emission Spectroscopy) that analyzes the optical spectrum for each wavelength of a material through a plasma state in a plasma nozzle on a wafer and components (elements) constituting a material recombined with ions and electrons after ionization We propose a wafer scanning method and device connected to both an inductively coupled plasma-mass spectrometer (ICP-MS) that performs mass spectrometry on, and a plasma nozzle and chamber used in the device.

In addition, in one embodiment, in order to solve the problem that the material to be analyzed is also exhausted by a vacuum pump when plasma is formed in a vacuum state, and quantitative analysis of the material to be analyzed is impossible, the inside of the chamber is filled with an inert gas for plasma formation. A wafer scanning method and apparatus for forming plasma in an atmospheric pressure state filled with , and a plasma nozzle and chamber used in the apparatus are proposed.

In addition, in one embodiment, in order to solve the problem of being scanned as a contaminant together with a material to be analyzed when a wafer chuck that linearly and rotationally moves a wafer is made of a metal material, at least a portion of the wafer chuck is formed by plasma formation. A method and apparatus for scanning a wafer formed of a heat-resistant and plasma-resistant material, and a plasma nozzle and chamber used in the apparatus are proposed.

The technical problems to be achieved by the embodiments are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the description below. You will be able to.

In order to achieve the above technical problem, a wafer scanning device according to an embodiment includes a chamber in which a wafer to be scanned is loaded; and a plasma nozzle generating plasma in the chamber and supplying the plasma to the wafer, wherein the plasma nozzle performs etching of the surface layer of the wafer and scanning of the wafer having the surface layer etched using the plasma. can do.

According to one side, the plasma nozzle may be characterized in that the surface layer of the wafer is etched and the wafer on which the surface layer is etched is scanned using the first plasma and the second plasma having different energy types and wavelengths. .

According to another aspect, the plasma nozzle includes a first plasma power provided on the inner wall of the lower end of the plasma nozzle and a gas introduced through a gas inlet formed on an inner wall of the lower end of the plasma nozzle and an upper end of the plasma nozzle. It may be characterized in that the first plasma and the second plasma are generated by ionization using the second plasma power.

According to another aspect, in the wafer scanning device, the first plasma and the second plasma are supplied to the wafer disposed under the plasma nozzle to ionize the wafer and etch the surface layer of the wafer. As the material recombined with ions and electrons moves to the branched tube formed at the top of the plasma nozzle, the optical spectrum for each wavelength is analyzed through OES (Optical Emission Spectroscopy) connected to one end of the branched tube, and the branched tube A material recombined with the ions and electrons may be analyzed through an inductively coupled plasma-mass spectrometer (ICP-MS) connected to the other end of the tube, and the wafer on which the surface layer is etched may be scanned.

According to another aspect, in the plasma nozzle, as the wafer is linearly and rotationally moved by a wafer chuck provided inside the chamber, a lower cover coupled to and detachable from the lower portion of the plasma nozzle is separated. The upper surface of the wafer disposed under the plasma nozzle is etched and scanned in a state in which the edge of the wafer is inserted through a slit formed on the sidewall of the lower cover in a state in which the lower cover is coupled. (Edge) may be characterized by etching and scanning.

According to another aspect, the chamber exhausts air inside the chamber to the outside of the chamber using gas introduced through a gas inlet formed on one side of the chamber or a gas inlet formed on an inner wall of a lower end of the plasma nozzle. It can be characterized by doing.

According to another aspect, in the process of linearly and rotationally moving the wafer in the wafer chuck for linearly and rotationally moving the wafer while being provided inside the chamber, the part where friction is generated during the process of linearly and rotationally moving the wafer is heat resistance according to plasma formation. And it may be characterized in that it is formed of a plasma resistant material.

A plasma nozzle generating plasma and supplying it to a wafer according to an embodiment may perform etching of the surface layer of the wafer and scanning of the wafer having the surface layer etched using the plasma.

According to one side, the plasma nozzle may include a gas inlet formed on an inner wall of a lower end of the plasma nozzle; a first plasma power provided on an inner wall of a lower end of the plasma nozzle; and a second plasma power provided at an upper end of the plasma nozzle, wherein the gas introduced through the gas inlet is ionized using the first plasma power and the second plasma power, so that the energy form and wavelength size are different. It may be characterized in that the first plasma and the second plasma are generated and used.

According to another aspect, the plasma nozzle may include a branched tube formed at an upper end of the plasma nozzle; OES (Optical Emission Spectroscopy) connected to one end of the branched tube; and an Inductively Coupled Plasma-Mass Spectrometer (ICP-MS) connected to the other end of the branched tube, wherein the first plasma and the second plasma are supplied to the wafer disposed below the plasma nozzle, and the wafer As the ionization is performed and the material recombined with ions and electrons in the wafer whose surface layer is etched moves to the branched tube, the optical spectrum for each wavelength is analyzed through the OES, and the ions and electrons are analyzed through the ICP-MS. A material recombined with electrons may be analyzed and a wafer in which the surface layer is etched may be scanned.

According to another aspect, the plasma nozzle further includes a lower cover coupled to and detachable from a lower portion of the plasma nozzle, and as the wafer is linearly and rotationally moved by a wafer chuck, the lower cover is separated. Etching and scanning the upper surface of the wafer disposed under the plasma nozzle in the state, etching and scanning the edge of the wafer inserted through the slit formed on the sidewall of the lower cover in the state in which the lower cover is coupled, and It can be characterized by scanning.

In a chamber used in a wafer scanning apparatus according to an embodiment, a plasma nozzle generating plasma for scanning a wafer and supplying the plasma to the wafer uses the plasma to etch and scan the upper surface of the wafer or to scan the wafer. It may include a wafer chuck that linearly and rotationally moves the wafer to etch and scan about the edge.

According to one side, the wafer chuck may etch and scan the wafer with respect to the upper surface of the wafer in a state in which the plasma nozzle is coupled to the lower portion of the plasma nozzle and separated from a detachable lower cover. It may be characterized in that it is linearly moved to and then rotated at the bottom of the plasma nozzle.

According to another aspect, the wafer chuck is configured to etch and scan the edge of the wafer in a state in which the plasma nozzle is coupled to a lower portion of the plasma nozzle and coupled to a detachable lower cover, so that the wafer is etched and scanned on a sidewall of the lower cover. It may be inserted through a slit formed in, linearly moved to the lower part of the plasma nozzle, and then rotated in the lower part of the plasma nozzle.

According to another aspect, the chamber exhausts air inside the chamber to the outside of the chamber using gas introduced through a gas inlet formed on one side of the chamber or a gas inlet formed on an inner wall of a lower end of the plasma nozzle. It can be characterized by doing.

A wafer scanning method according to an embodiment includes loading a wafer into a chamber; generating and supplying plasma through a plasma nozzle provided inside the chamber to etch a surface layer of the wafer and scanning the wafer on which the surface layer is etched; and unloading the wafer out of the chamber.

According to one aspect, the scanning may include introducing gas into the chamber through a gas inlet formed on an inner wall of a lower end of the plasma nozzle; The gas is ionized using the first plasma power provided on the lower inner wall of the plasma nozzle and the second plasma power provided on the upper end of the plasma nozzle, so that the first plasma and the second plasma have different energy types and wavelengths. Generating and supplying to the wafer; performing ionization on the wafer by linearly and rotationally moving the wafer through a wafer chuck provided inside the chamber; moving materials recombined with ions and electrons by the first plasma and the second plasma in the wafer whose surface layer is etched, to a branched tube formed at an upper end of the plasma nozzle; and analyzing an optical spectrum for each wavelength through Optical Emission Spectroscopy (OES) connected to one end of the branched tube, and analyzing the ions and electrons through an Inductively Coupled Plasma-Mass Spectrometer (ICP-MS) connected to the other end of the branched tube. The method may include analyzing the recombined material and scanning the wafer on which the surface layer is etched.

According to another aspect, the carrying out may include disposing the wafer under the plasma nozzle through the wafer chuck in a state where a lower cover coupled to and detachable from the plasma nozzle is separated from the plasma nozzle, and performing ionization on the upper surface of the wafer by moving and rotating; or inserting the wafer through a slit formed on a sidewall of the lower cover through the wafer chuck in a state in which the lower cover is coupled to the plasma nozzle, and performing linear and rotational movement to ionize the edge of the wafer. It may be characterized in that it includes at least one of the steps.

According to another aspect, the scanning may include scanning the upper surface of the wafer on which the surface layer is etched as the upper surface of the wafer is ionized; Alternatively, as the ionization is performed on the edge of the wafer, it may be characterized by including at least one of the steps of scanning the edge of the wafer on which the surface layer is etched.

According to another aspect, the introducing may include exhausting air inside the chamber to the outside of the chamber by using a gas introduced through the gas inlet or a gas introduced through a gas inlet formed at one side of the chamber. It may be characterized by including steps.

Embodiments solve the problem that a hydrofluoric acid leakage accident may occur due to the use of a hydrofluoric acid-based decomposition and etching solution or a decomposition and etching gas, and the need to exhaust and dispose of environmental contaminants through cleaning in the chamber after wafer scanning. techniques can be suggested.

In more detail, embodiments will propose a wafer scanning method and apparatus for etching a surface layer of a wafer and scanning a wafer having the etched surface layer using plasma, and a plasma nozzle and chamber used in the apparatus. can

In addition, embodiments of the present invention provide a wafer scanning method and apparatus for etching and scanning both the upper surface and the edge of a wafer by simultaneously generating and supplying first plasma and second plasma and linearly and rotationally moving the wafer. , and the plasma nozzle and chamber used in the device can be suggested.

In addition, one embodiment is connected to both OES (Optical Emission Spectroscopy) and ICP-MS (Inductively Coupled Plasma-Mass Spectrometer), OES (Optical Emission Spectroscopy) that analyzes the optical spectrum of each wavelength of a material through a plasma state in a wafer A wafer scanning method and device that performs mass spectrometry on components (elements) constituting materials recombined with ions and electrons, and a plasma nozzle and chamber used in the device can be proposed.

In addition, in one embodiment, plasma is formed in an atmospheric pressure state filled with an inert gas for plasma formation, so that when plasma is formed in a vacuum state, the analyte material is also exhausted by a vacuum pump to analyze the analyte material. A wafer scanning method and device for preventing a problem in which quantitative analysis is not possible for , and a plasma nozzle and chamber used in the device may be proposed.

In addition, in one embodiment, at least a portion of a wafer chuck that linearly and rotationally moves a wafer is formed of a heat-resistant and plasma-resistant material according to plasma formation, so that the wafer chuck is made of a metal material together with the material to be analyzed. A wafer scanning method and device for preventing the problem of being scanned with contaminants in advance, and a plasma nozzle and chamber used in the device can be proposed.

The described technical effects are not limited to the above effects, and should be understood to include all effects that can be inferred from the detailed description below or the configuration of the invention described in the claims.

1 is a side cross-sectional view illustrating a wafer scanning device according to an exemplary embodiment.
FIG. 2 is an enlarged side cross-sectional view of a plasma nozzle in the wafer scanning device shown in FIG. 1 .
FIG. 3 is a side cross-sectional view of a plasma nozzle for explaining that the plasma nozzle shown in FIG. 2 generates and supplies first plasma and second plasma having different energy types and wavelengths.
FIG. 4 is a side cross-sectional view of the wafer scanning device for explaining that the plasma nozzle shown in FIG. 2 etches and scans the upper surface of the wafer.
FIG. 5 is a side cross-sectional view of the wafer scanning device for explaining that the plasma nozzle shown in FIG. 2 etches and scans the edge of a wafer.
FIG. 6 is an enlarged side cross-sectional view of a plasma probe provided in the plasma nozzle shown in FIG. 2 .
FIG. 7 is a side cross-sectional view illustrating a wafer chuck included in the wafer scanning device shown in FIG. 1 .
FIG. 8 is a flow chart illustrating a wafer scanning method performed by the wafer scanning device shown in FIG. 1 .

Hereinafter, the present invention will be described with reference to the accompanying drawings. However, the present invention may be embodied in many different forms and, therefore, is not limited to the embodiments described herein. And in order to clearly explain the present invention in the drawings, parts irrelevant to the description are omitted, and similar reference numerals are attached to similar parts throughout the specification.

Throughout the specification, when a part is said to be "connected (connected, contacted, combined)" with another part, this is not only "directly connected", but also "indirectly connected" with another member in between. "Including cases where In addition, when a part "includes" a certain component, it means that it may further include other components without excluding other components unless otherwise stated.

Terms used in this specification are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, terms such as "include" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features It should be understood that the presence or addition of numbers, steps, operations, components, parts, or combinations thereof is not precluded.

FIG. 1 is a side cross-sectional view of a wafer scanning device according to an embodiment, FIG. 2 is an enlarged side cross-sectional view of a plasma nozzle in the wafer scanning device shown in FIG. 1, and FIG. 3 is a plasma nozzle shown in FIG. A side cross-sectional view of a plasma nozzle for explaining generating and supplying first plasma and second plasma having different energy types and wavelengths, and FIG. 4 is a plasma nozzle shown in FIG. FIG. 5 is a side cross-sectional view of the wafer scanning device for explaining that the plasma nozzle shown in FIG. 2 etches and scans the edge of the wafer, and FIG. 6 is in FIG. An enlarged side cross-sectional view of a plasma probe included in the illustrated plasma nozzle, and FIG. 7 is a side cross-sectional view illustrating a wafer chuck included in the wafer scanning device illustrated in FIG. 1 .

Referring to FIGS. 1 and 7 , the wafer scanning device 100 may include a chamber 110 , a plasma nozzle 120 and a wafer chuck 130 .

The chamber 110 is a component in which the wafer 140 to be scanned is loaded and a scan operation is performed by the plasma nozzle 120, and a gas inlet 111 formed on one side to introduce gas into the chamber 110 and air or Each of the gas inlet 111 and the exhaust port 112 may be controlled so that the internal pressure is kept constant while including the exhaust port 112 formed on the other side to exhaust the gas.

Loading and unloading of the wafer 140 into the chamber 110 may be performed through a Wafer Transfer Robot (WTR).

At this time, the chamber 110 forms plasma in a vacuum state, and the material to be analyzed is also exhausted by a vacuum pump to solve the problem that quantitative analysis of the material to be analyzed is impossible through the gas inlet 111. A method of forming plasma in an atmospheric pressure state filled with gas may be applied by pushing and exhausting air inside the chamber 110 to the outside of the chamber 110 using the introduced gas.

The gas that pushes the air inside the chamber 110 to the outside of the chamber 110 may not only be introduced through the gas inlet 111, but may also be introduced through the gas inlet formed on the lower inner wall of the plasma nozzle 120. have.

Acid exhaust may be connected to the exhaust port 112 . Disadvantages caused by the acid exhaust being connected to the exhaust port 112 (a disadvantage that the inside of the chamber 110 may be contaminated through backflow and corrosion of equipment) can be prevented in advance by providing a check valve for preventing backflow.

After the gas is introduced into the chamber 110 and all the air inside is exhausted, when the internal pressure reaches a certain pressure or higher, the respective valves of the gas inlet 111 and the outlet 112 are closed to prevent plasma formation. The gas for the plasma nozzle 120 may be introduced into the inside only through the gas inlet 121 formed on the lower inner wall of the nozzle 120 . Accordingly, the material recombined with ions and electrons by the plasma in the wafer 140 is only directed to the plasma nozzle 120 (to be precise, a branched tube formed at the top of the plasma nozzle 120) and not to other parts of the chamber 110. Branch tube) (122)) can be moved.

Here, the gas introduced into the chamber 110 through the gas inlet 111 of the chamber 110 or the gas inlet 121 of the plasma nozzle 120 is a purge gas that exhausts the air inside the chamber 110. At the same time, materials recombined with ions and electrons by the plasma generated by the plasma nozzle 120 are moved to the plasma nozzle 120 (precisely, the branched tube 122 formed at the top of the plasma nozzle 120) can be used as a carrier gas. As the gas for this purpose, an inert gas for plasma formation such as Ar gas may be used.

The plasma nozzle 120 is a component that scans the wafer 140 by generating plasma in the chamber 110 and then supplying the plasma to the wafer 140, and is capable of etching the surface layer of the wafer 140 and the surface layer of the wafer 140. All scanning of the etched wafer 140 may be performed using plasma. Therefore, in etching the surface layer of the wafer 140, plasma is used instead of decomposition and etching solutions, which can cause hydrofluoric acid leakage accidents and exhaust and dispose of environmental pollutants through cleaning in the chamber after scanning the wafer. The disadvantages that need to be done can be prevented in advance.

In particular, the plasma nozzle 120 is characterized in that etching the surface layer of the wafer 140 and scanning the wafer 140 having the surface layer etched are performed through a single process using plasma. In more detail, the plasma nozzle 120 ionizes the gas introduced through the gas inlet 121 to generate plasma, and supplies the generated plasma to the wafer 140 to ionize the wafer 140 to form the wafer 140. At the same time as the surface layer is etched, materials recombined with ions and electrons in the wafer 140 whose surface layer is etched may be moved to the branched tube 122 . Accordingly, the optical spectrum for each wavelength of the material is analyzed through Optical Emission Spectroscopy (OES) connected to one end of the branched tube 122, and the Inductively Coupled Plasma-Mass Spectrometer (ICP-MS) connected to the other end of the branched tube 122. Through this, it can be a mass spectrometer for materials recombined with ions and electrons.

At this time, the plasma nozzle 120 may introduce gases such as O ₂ , O ₃ , H, and CF ₄ as well as the above-described Ar gas through the gas inlet 121 through the gas inlet 121 to generate plasma. can

A heater for preventing adsorption of ionized materials may be disposed around the other end of the branched tube 122 connected to the ICP-MS.

Here, the plasma nozzle 120 uses the first plasma power 123 provided on the inner wall at the bottom of the plasma nozzle 120 and the second plasma power 124 provided on the top of the plasma nozzle 120 to form a gas inlet. By ionizing the gas introduced through 121, as shown in FIG. 3, a first plasma and a second plasma having different energy types and wavelengths can be generated and used in etching and scanning processes. For example, the plasma nozzle 120 moves the material recombined with ions and electrons from the wafer 140 by the first plasma and the second plasma generated as described above to the branched tube 122, and the ICP- The wafer 140 on which the surface layer is etched may be scanned by analyzing materials recombined with ions and electrons through MS.

In addition, the plasma nozzle 120 may further include a lower cover 125 that is coupled and detachable to the lower portion of the plasma nozzle 120 . Accordingly, as the wafer 140 is linearly and rotationally moved by the wafer chuck 130, the plasma nozzle 120 is moved in a state where the lower cover 125 is separated, as shown in FIG. Etched and scanned for the upper surface of the wafer 140 disposed under the lower part, and inserted through the slit formed on the sidewall of the lower cover 125 in a state in which the lower cover 125 is coupled as shown in FIG. The edge of the wafer 140 may be etched and scanned.

In addition, the plasma nozzle 120 may include a plasma probe for measuring plasma density as shown in FIG. 6 on one side.

The wafer chuck 130 is a component provided inside the chamber 110 to linearly and rotationally move the wafer 140, and as described above, the plasma nozzle 120 uses plasma to move the wafer 140. It is characterized by moving the wafer 140 to etch and scan the top surface or to etch and scan the edge of the wafer 140 .

For example, the wafer chuck 130 may etch and scan the upper surface of the wafer 140 while the plasma nozzle 120 is separated from the lower cover 125 as shown in FIG. 4 . After moving linearly to the lower part of the plasma nozzle 120, it may be rotated in the lower part of the plasma nozzle 120. Accordingly, a region in which materials recombined with ions and electrons are scanned may correspond to the upper surface of the wafer 140 as shown in the lower portion of FIG. 4 .

As another example, the wafer chuck 130 may etch and scan the edge of the wafer 140 in a state in which the plasma nozzle 120 is coupled to the lower cover 125 as shown in FIG. 5 . is inserted through the slit formed on the sidewall of the lower cover 125 and linearly moved to the lower part of the plasma nozzle 120, and then rotated in the lower part of the plasma nozzle 120. Accordingly, a region where materials recombined with ions and electrons are scanned may correspond to the edge of the wafer 140 as shown in the lower portion of FIG. 5 .

At this time, at least a portion of the wafer chuck 130 is formed of a heat-resistant and plasma-resistant material according to plasma formation, so that the existing wafer chuck 130 is entirely made of a metal material, so the problem of being scanned as a contaminant together with the material to be analyzed has not been addressed. can be prevented in For example, as shown in FIG. 7 , the part 131 where friction is generated during the process of linearly and rotationally moving the wafer 140 in the wafer chuck 130 is formed of a heat-resistant and plasma-resistant material according to plasma formation. It can be. For a more specific example, the friction generating portion 131 is a portion in contact with a chuck rotator coupled by an ND magnet to the lower portion of the wafer chuck 130, covering the ND magnet, and It can be formed of heat-resistant and plasma-resistant materials.

In such a wafer chuck 130, the chuck rotating part can be linearly driven in the direction (horizontal direction) of the gate valve of the chamber 110, and is rotationally driven based on the driven axis, which is the main axis. As the chuck 130 is implemented to be rotationally driven, linear movement and rotational movement may be possible. Accordingly, the wafer chuck 130 may scan the entire area of the wafer 140 .

FIG. 8 is a flow chart illustrating a wafer scanning method performed by the wafer scanning device shown in FIG. 1 . Hereinafter, the wafer scanning method described is assumed to be performed by the wafer scanning device 100 described above.

In operation S810 , the wafer scanning device 100 may load the wafer 140 into the chamber 110 .

In step S820, the wafer scanning device 100 generates and supplies plasma through the plasma nozzle 120 provided inside the chamber 110 to etch the surface layer of the wafer 140 and etch the surface layer of the wafer 140. ) can be scanned.

In more detail, the step S820 includes a first step of introducing gas into the chamber 110 through the gas inlet 121 formed on the lower inner wall of the plasma nozzle 120; By ionizing the gas using the first plasma power 123 provided on the inner wall at the bottom of the plasma nozzle 120 and the second plasma power 124 provided on the top of the plasma nozzle 120, the energy form and wavelength size A second step of generating and supplying first plasma and second plasma having different values to the wafer 140; A third step of performing ionization on the wafer 140 while linearly and rotationally moving the wafer 140 through the wafer chuck 130 provided inside the chamber 110; A fourth step of moving a material recombined with ions and electrons by the first plasma and the second plasma in the wafer 140 whose surface layer is etched, to the branched tube 122 formed at the upper end of the plasma nozzle 120; and analyzing the optical spectrum for each wavelength through OES (Optical Emission Spectroscopy) connected to one end of the branched tube 122 and ion ions through an Inductively Coupled Plasma-Mass Spectrometer (ICP-MS) connected to the other end of the branched tube 122. and a fifth step of scanning the wafer 140 having an etched surface layer by analyzing materials recombined with electrons.

At this time, in the first step, the chamber 110 is formed using gas introduced through the gas inlet 121 of the plasma nozzle 120 or gas introduced through the gas inlet 111 formed on one side of the chamber 110. A step of exhausting internal air to the outside of the chamber 110 may be included.

In addition, in the third step, the wafer 140 is moved through the wafer chuck 130 to the plasma nozzle ( 120) and performing ionization on the upper surface of the wafer 140 by linear and rotational movement; Alternatively, in a state where the lower cover 125 is coupled to the plasma nozzle 120, the wafer 140 is inserted through the slit formed on the sidewall of the lower cover 125 through the wafer chuck 130, and the wafer 140 is linearly and rotationally moved. At least one of the steps of performing ionization on the edge of (140) may be included.

Accordingly, the fifth step includes scanning the upper surface of the wafer 140 whose surface layer is etched as the ionization of the upper surface of the wafer 140 is performed; Alternatively, as ionization is performed on the edge of the wafer 140, at least one step of scanning the edge of the wafer 140 whose surface layer is etched may be included.

When the scanning of the wafer 140 is completed as described above, the wafer scanning device 100 may unload the wafer 140 out of the chamber 110 in step S830 .

As described above, although the embodiments have been described with limited examples and drawings, those skilled in the art can make various modifications and variations from the above description. For example, the described techniques may be performed in an order different from the method described, and/or components of the described system, structure, device, circuit, etc. may be combined or combined in a different form than the method described, or other components may be used. Or even if it is replaced or substituted by equivalents, appropriate results can be achieved.

Therefore, other implementations, other embodiments, and equivalents of the claims are within the scope of the following claims.

The above description of the present invention is for illustrative purposes, and those skilled in the art can understand that it can be easily modified into other specific forms without changing the technical spirit or essential features of the present invention. will be. Therefore, the embodiments described above should be understood as illustrative in all respects and not limiting. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.

The scope of the present invention is indicated by the following claims, and all changes or modifications derived from the meaning and scope of the claims and equivalent concepts should be interpreted as being included in the scope of the present invention.

100: wafer scan device
110: chamber
111 gas inlet of the chamber
112: exhaust port
120: plasma nozzle
121 gas inlet of plasma nozzle
122: branched tube
123: first plasma power
124: second plasma power
125: lower cover
130: wafer chuck
140: wafer

Claims (10)

In the wafer scanning device,
a chamber in which a wafer to be scanned is loaded; and
Plasma nozzle generating plasma in the chamber and supplying it to the wafer
including,
The plasma nozzle,
Etching the surface layer of the wafer and scanning the wafer on which the surface layer is etched are performed using the plasma,
In scanning the wafer on which the surface layer is etched, mass spectrometry is performed on components constituting a material recombined with ions and electrons in the wafer on which the surface layer is etched using the plasma. In the wafer scanning device,
a chamber in which a wafer to be scanned is loaded; and
Plasma nozzle generating plasma in the chamber and supplying it to the wafer
including,
The plasma nozzle,
Generated by ionizing the gas introduced through the gas inlet formed on the lower inner wall of the plasma nozzle based on the first plasma power provided on the lower inner wall of the plasma nozzle and the second plasma power provided on the upper end of the plasma nozzle. A wafer scanning device characterized in that the surface layer of the wafer is etched using the first plasma and the second plasma having different energy types and wavelength sizes, and scanning the wafer having the surface layer etched. delete According to claim 2,
The wafer scan device,
The first plasma and the second plasma are supplied to the wafer disposed below the plasma nozzle, ionization is performed on the wafer, and a material recombined with ions and electrons from the wafer whose surface layer is etched is transferred to the plasma nozzle. As it moves to the branched tube formed at the top, the optical spectrum for each wavelength is analyzed through OES (Optical Emission Spectroscopy) connected to one end of the branched tube, and the ICP-MS (Inductively Coupled Plasma-MS) connected to the other end of the branched tube. A wafer scanning device characterized in that for scanning a wafer on which the surface layer is etched by analyzing a material recombined with the ions and electrons through a mass spectrometer. According to any one of claims 1 or 2,
The plasma nozzle,
As the wafer is linearly and rotationally moved by a wafer chuck provided inside the chamber, the lower cover coupled to and detachable from the lower part of the plasma nozzle is disposed under the plasma nozzle in a separated state. Etching and scanning the upper surface of the wafer, and etching and scanning the edge of the wafer inserted through a slit formed on the sidewall of the lower cover in a state in which the lower cover is coupled wafer scanning device. According to any one of claims 1 or 2,
the chamber,
The air inside the chamber is exhausted to the outside of the chamber using gas introduced through a gas inlet formed on one side of the chamber or a gas inlet formed on an inner wall of the lower end of the plasma nozzle, and the inside of the chamber is filled with the atmospheric pressure of the gas. Wafer scanning device, characterized in that for maintaining the state. According to any one of claims 1 or 2,
In the process of linearly and rotationally moving the wafer in the wafer chuck for linearly and rotationally moving the wafer while being provided inside the chamber, the part where friction occurs during the process of linearly and rotationally moving the wafer,
A wafer scanning device characterized in that it is formed of a heat-resistant and plasma-resistant material according to plasma formation. In the plasma nozzle for generating and supplying plasma to the wafer,
The plasma nozzle,
Etching the surface layer of the wafer and scanning the wafer on which the surface layer is etched are performed using the plasma,
Plasma nozzle, characterized in that in scanning the surface layer etched wafer, mass spectrometry is performed on components constituting a material recombined with ions and electrons in the surface layer etched wafer using the plasma. In the chamber used for the wafer scan device,
Linear movement and rotation of the wafer so that a plasma nozzle generating plasma for scanning the wafer and supplying it to the wafer etch and scan the upper surface of the wafer or etch and scan the edge of the wafer using the plasma. moving wafer chuck
including,
The part where friction is generated during the linear and rotational movement of the wafer in the wafer chuck,
A chamber characterized in that it is formed of a heat-resistant and plasma-resistant material according to plasma formation. loading a wafer into the chamber;
generating and supplying plasma through a plasma nozzle provided inside the chamber to etch a surface layer of the wafer and scanning the wafer on which the surface layer is etched; and
unloading the wafer out of the chamber;
including,
In the scanning step,
The wafer scanning method characterized in that performing mass spectrometry on components constituting a material recombined with ions and electrons in the wafer whose surface layer is etched using the plasma.

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