KR102469170B1 - Display device - Google Patents

Abstract

A display device according to an embodiment includes a grayscale display layer for providing first color light, a transmission filter disposed on the grayscale display layer and transmitting the first color light, and a color conversion member for converting the first color light into other color light. A color control layer comprising a color control layer and an optical control layer disposed on the color control layer and including a metal layer and an inorganic layer having an absorption coefficient of 3 to 3.5 in a wavelength range of 530 nm to 570 nm, and the inorganic layer in a wavelength range of 530 nm to 570 nm. A first sub-inorganic layer having an absorption coefficient of 0.3 or more and 1 or less and a second sub-inorganic layer having an absorption coefficient of 0.001 or more and 0.2 or less in a wavelength range of 530 nm to 570 nm may have excellent light efficiency and reduce reflection of external light.

Description

Display device {DISPLAY DEVICE}

The present invention relates to a display device, and more particularly, to a display device including an optical control layer disposed on a color control layer to reduce reflection by external light and increase light efficiency.

Various types of display devices are used to provide image information, and recently, liquid crystal displays and organic light emitting diodes that can be applied to large display devices are being developed. On the other hand, in order to increase light efficiency and color reproducibility of display devices, cases in which light emitting bodies such as quantum dots are applied are increasing.

In addition, research on improving the quality of the display device by improving the structure of the display device to further increase light efficiency and reducing the reflectance of the display panel due to external light is being continued.

An object of the present invention is to provide a display device with improved light efficiency.

Another object of the present invention is to provide a display device in which reflection by external light is reduced.

A display device according to an exemplary embodiment of the present invention includes a grayscale display layer that provides a first color light, a transmission filter disposed on the grayscale display layer and transmits the first color light, and a color conversion that converts the first color light into another color light. A color control layer including a member and an optical control layer disposed on the color control layer and including a metal layer and an inorganic layer having an absorption coefficient of 3 or more and 3.5 or less in a wavelength range of 530 nm to 570 nm.

The inorganic layer includes a first sub inorganic layer having an absorption coefficient of 0.3 or more and 1 or less in a wavelength range of 530 nm to 570 nm and a second sub inorganic layer having an absorption coefficient of 0.001 or more and 0.2 or less in a wavelength range of 530 nm to 570 nm.

The inorganic layer may satisfy Equation 1 below.

[Equation 1]

In Equation 1, λ is a wavelength of 530 nm to 570 nm, m is 0 and a natural number, Ta ₁ is the thickness of the first sub-inorganic layer, Ta ₂ is the thickness of the second sub-inorganic layer, and n ₁ is the first sub-inorganic layer. It is the refractive index of the inorganic layer at the λ wavelength, and n ₂ is the refractive index of the second sub-inorganic layer at the λ wavelength.

A difference in refractive index between the first sub-inorganic layer and the second sub-inorganic layer may be 0 or more and 0.5 or less.

The refractive index of the first sub-inorganic layer may be 2 or more and 2.5 or less, and the refractive index of the second sub-inorganic layer may be 2 or more and 2.5 or less.

The first sub-inorganic layer may have a thickness of 9.9 nm or more and 39.9 nm or less, and the second sub-inorganic layer may have a thickness of 0.1 nm or more and 20.0 nm or less.

A sum of the thickness of the first sub-inorganic layer and the thickness of the second sub-inorganic layer may be greater than or equal to 10.0 nm and less than or equal to 40.0 nm.

The first sub-inorganic layer may include molitantaloxide, and the second sub-inorganic layer may include indium zinc oxide.

The second sub-inorganic layer may be disposed between the metal layer and the first sub-inorganic layer, or the second sub-inorganic layer may be disposed on the metal layer and the first sub-inorganic layer.

The metal layer may include silver.

The color conversion member may include at least a quantum dot or a quantum rod.

The gradation display layer includes a first pixel corresponding to the transmission filter, a second pixel corresponding to the color conversion member, and a third pixel, the color conversion member corresponding to the second pixel and converting the first color light into the second color light. and a second color conversion member corresponding to the third pixel and converting the first color light into the third color light, wherein the optical control layer provides light to the first pixel, the second pixel, and the third pixel. can overlap.

The display device according to an exemplary embodiment of the present invention further includes a band filter disposed on the color control layer, overlapping the second and third pixels, and blocking first color light and transmitting second and third color light. can include

The first pixel, second pixel, and third pixel include a first organic light emitting diode, a second organic light emitting diode, and a third organic light emitting diode, respectively, and the first organic light emitting diode, the second organic light emitting diode, and the third organic light emitting diode. The light emitting layer of the organic light emitting diode may have an integral shape.

The display device according to an exemplary embodiment of the present invention may further include an absorption layer disposed on the optical control layer and absorbing light having a wavelength ranging from at least 580 nm to 600 nm.

The display device according to an exemplary embodiment of the present invention may further include a low refractive index layer disposed on the optical control layer and having a refractive index of 1.1 or more and 1.5 or less.

A display device according to an exemplary embodiment of the present invention includes a base substrate, first to third pixels disposed on the base substrate, each including an organic light emitting diode generating a first color light, and sealing the first to third pixels. a sealing member corresponding to the first pixel and transmitting the first color light; a first color conversion member corresponding to the second pixel and converting the first color light into second color light; and corresponding to the third pixel and transmitting the first color light. a color control layer disposed on the first to third pixels, including a second color conversion member that converts color light into third color light; And a metal layer and an inorganic layer having an absorption coefficient of 3 or more and 3.5 or less in a wavelength range of 530 nm to 570 nm, and an optical control layer disposed on the color control layer and overlapping the first to third pixels, the inorganic layer having a wavelength range of 530 nm to 3.5 A first sub-inorganic layer having an absorption coefficient of 0.3 or more and 1 or less in a wavelength range of 570 nm and a second sub-inorganic layer having an absorption coefficient of 0.001 or more and 0.2 or less in a wavelength range of 530 nm to 570 nm.

A display device according to an embodiment of the present invention includes a first base substrate for receiving first color light, a second base substrate spaced apart from the first base substrate, a liquid crystal layer, a pixel electrode for forming an electric field in the liquid crystal layer, and a common First to third pixels each including an electrode and disposed between the first base substrate and the second base substrate, a transmission filter for transmitting the first color light transmitted through the first pixel, and the first color light transmitted through the second pixel a first color conversion member for converting a first color light into second color light, and a second color conversion member for converting the first color light transmitted through a third pixel into third color light, and the colors are disposed on the first to third pixels. A control layer and a metal layer and an inorganic layer having an absorption coefficient of 3 or more and 3.5 or less in a wavelength range of 530 nm to 570 nm, and an optical control layer disposed on the color control layer and overlapping the first to third pixels, the inorganic layer A first sub inorganic layer having an absorption coefficient of 0.3 or more and 1 or less in a wavelength range of 530 nm to 570 nm and a second sub inorganic layer having an absorption coefficient of 0.001 or more and 0.2 or less in a wavelength range of 530 nm to 570 nm.

The color control layer may be disposed on the lower surface of the second base substrate, and the optical control layer may be disposed between the lower surface of the second base substrate and the color control layer.

The color control layer and the optical control layer may be disposed on the upper surface of the second base substrate.

An embodiment may provide a display device having high transmittance and reduced reflectance of external light by including an optical control layer including an inorganic layer disposed on the color control layer.

An embodiment may provide a display device having a reduced external light reflectance by including an absorption layer disposed on the optical control layer.

An embodiment may provide a display device having improved display quality by including a band filter disposed on the optical control layer.

1 is a plan view of a display device according to an exemplary embodiment of the present invention.
2 is a diagram illustrating a path of lights of a display device according to an exemplary embodiment of the present invention.
3 is a diagram illustrating a path of light reflected from an optical control layer according to an embodiment of the present invention.
Figure 4a is a graph showing the absorption coefficient and refractive index of the inorganic layer material according to an embodiment of the present invention.
4b and 4c are graphs showing reflectance and transmittance of the optical control layer according to an embodiment of the present invention.
5 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention.
6 is an equivalent circuit diagram of a pixel according to an embodiment of the present invention.
7 is a cross-sectional view of a display area of a display device according to an exemplary embodiment of the present invention.
8A and 8B are cross-sectional views of a display device according to an exemplary embodiment of the present invention.
9A to 9D are cross-sectional views of a display device according to an exemplary embodiment of the present invention.
10 is a graph showing the transmittance of each layer according to an embodiment of the present invention.
11 and 12 are cross-sectional views of a display device according to an exemplary embodiment of the present invention.
13 is a cross-sectional view of a display device according to an exemplary embodiment.
14 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention.
15A is an equivalent circuit diagram of a pixel according to an embodiment of the present invention.
15B is a cross-sectional view of a display panel according to an exemplary embodiment of the present invention.
16A to 16C are cross-sectional views of a display device according to an exemplary embodiment.

Since the present invention may have various changes and various forms, specific embodiments are illustrated in the drawings and described in detail in the text. However, it should be understood that this is not intended to limit the present invention to the specific disclosed form, and includes all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

Like reference numerals have been used for like elements throughout the description of each figure. In the accompanying drawings, the dimensions of the structures are shown enlarged than actual for clarity of the present invention. Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. These terms are only used for the purpose of distinguishing one component from another. For example, a first element may be termed a second element, and similarly, a second element may be termed a first element, without departing from the scope of the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise.

In this application, the terms "include" or "have" are intended to designate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features It should be understood that it does not preclude the possibility of the presence or addition of numbers, steps, operations, components, parts, or combinations thereof.

In this application, when a part such as a layer, film, region, plate, etc. is said to be "on" or "above" another part, this is not only when it is "directly on" the other part, but also when there is another part in the middle. Also includes Conversely, when a part such as a layer, film, region, plate, etc. is said to be "under" or "below" another part, this includes not only the case where it is "directly under" the other part, but also the case where there is another part in between. . In addition, in the present application, being disposed "on" may include the case of being disposed not only on the top but also on the bottom.

Meanwhile, in the present application, "directly disposed" may mean that there is no layer, film, region, plate, etc. added between a part of the layer, film, region, plate, etc. and another part. For example, "directly disposed" may mean disposing without using an additional member such as an adhesive member between two layers or two members.

Hereinafter, a display device according to an exemplary embodiment of the present invention will be described with reference to the drawings.

1 is a plan view of a display device according to an exemplary embodiment of the present invention. 2 is a diagram illustrating a path of lights of a display device according to an exemplary embodiment of the present invention. 3 is a diagram illustrating a path of light reflected from an optical control layer according to an embodiment of the present invention. Figure 4a is a graph showing the absorption coefficient and refractive index of the inorganic layer material according to an embodiment of the present invention. 4b and 4c are graphs showing reflectance and transmittance of the optical control layer according to an embodiment of the present invention. 5 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention.

Referring to FIG. 1 , a display device DD according to an exemplary embodiment may include a display area DA displaying an image and a non-display area NDA not displaying an image. The non-display area NDA may be disposed outside the display area DA.

The display area DA may include a plurality of pixel areas Pxa-R, Pxa-G, and Pxa-B. The pixel regions Pxa-R, Pxa-G, and Pxa-B may be defined by, for example, a plurality of gate lines and a plurality of data lines. The pixel regions Pxa-R, Pxa-G, and Pxa-B may be arranged in a matrix form. However, the arrangement structure of the pixel area is not limited thereto, and may have, for example, a pentile structure. A pixel described below may be disposed in each of the pixel regions Pxa-R, Pxa-G, and Pxa-B.

The pixel areas Pxa-R, Pxa-G, and Pxa-B include a first pixel area Pxa-B emitting a first color light, a second pixel area Pxa-G emitting a second color light, and a second pixel area Pxa-G emitting a second color light. It may include a third pixel area Pxa-R that emits three color lights. In an embodiment, the first color light may be blue light, the second color light may be green light, and the third color light may be red light.

A pixel to be described later in the present invention may be an emission type pixel or a transmission type pixel.

In one embodiment of the present invention, a display device DD having a flat display surface is illustrated, but is not limited thereto. The display device DD may include a curved display surface or a three-dimensional display surface. The three-dimensional display surface includes a plurality of display areas indicating different directions, and may include, for example, a polygonal columnar display surface.

The display device DD according to the present embodiment may be a rigid display device. However, it is not limited thereto, and the display device DD according to the present invention may be a flexible display device.

As shown in FIG. 2, the display device DD according to the present invention has a grayscale display layer DL, a color control layer CCL disposed on the grayscale display layer DL, and a color control layer CCL on the color control layer CCL. and an optical control layer LCL including a metal layer ML and an inorganic layer IL.

Referring to FIG. 2 , the grayscale display layer DL provides a first color light to the display device DD. Some of the first color light provided from the grayscale display layer DL may pass through the color control layer CCL. Also, some of the first color light supplied from the grayscale display layer DL may be converted into other color light by the color control layer CCL. The other color light may be a second color light or a third color light. Some of the first color light transmitted through the color control layer CCL may pass through the optical control layer LCL. Some of the first color light transmitted through the color control layer CCL may be reflected by the optical control layer LCL. Some of the first color light reflected by the optical control layer LCL may be re-reflected by the grayscale display layer DL and re-incident to the color control layer CCL. Accordingly, light efficiency of the display device DD may be improved through recycling of light utilizing such internal reflection. Most of the other color light generated from the color control layer (CCL) may pass through the optical control layer (LCL).

The optical control layer LCL includes the metal layer ML and the inorganic layer IL to reduce reflectance of external light. In one embodiment, the inorganic layer IL may be a single layer or a plurality of layers of two or more layers. When the inorganic layer IL has a plurality of layers, it may be named a first sub-inorganic layer Sub-IL1 , a second sub-inorganic layer Sub-IL2 , a third sub-inorganic layer (not shown), and the like. A stacked structure between the sub-inorganic layers may be arranged in various ways. For example, a second sub-inorganic layer Sub-IL2 and a second sub-inorganic layer Sub-IL1 are formed on the first sub-inorganic layer Sub-IL1. IL2), a third sub inorganic layer may be sequentially disposed on the third sub inorganic layer, or a second sub inorganic layer (Sub-IL2) on the third sub inorganic layer, and a first sub inorganic layer (Sub-IL2) on the second sub inorganic layer (Sub-IL2). The inorganic layer Sub-IL1 may be sequentially disposed, but is not limited thereto.

In an embodiment, the inorganic layer IL includes a first sub-inorganic layer (Sub-IL1) having an absorption coefficient of 0.3 or more and 1 or less in the wavelength range of 530 nm to 570 nm and a second sub-inorganic layer (Sub-IL1) having an absorption coefficient of 0.001 or more and 0.2 or less in the wavelength range of 530 nm to 570 nm. A layer (Sub-IL2) may be included. The inorganic layer IL including the first sub-inorganic layer Sub-IL1 and the second sub-inorganic layer Sub-IL2 having an absorption coefficient within the above range may absorb some of light incident from the outside, and thus Accordingly, external light reflection can be reduced.

As shown in FIG. 3 , in the optical control layer LCL, reflected lights reflected from the metal layer ML and the inorganic layer IL may cancel each other out.

In one embodiment, the inorganic layer IL preferably satisfies the condition of Equation 1 below.

[Equation 1]

In Equation 1, λ is a wavelength of 530 nm to 570 nm, m is 0 and a natural number, Ta ₁ is the thickness of the first sub-inorganic layer, Ta ₂ is the thickness of the second sub-inorganic layer, and n ₁ is A refractive index of the first sub-inorganic layer at the λ wavelength, and n ₂ is a refractive index of the second sub-inorganic layer at the λ wavelength.

When the inorganic layer IL satisfies the condition of Equation 1 above, the inorganic layer IL may simultaneously perform a role of absorbing external light and a role of adjusting the phase for destructive interference, and as shown in FIG. 3, destructive interference The first light L1 and the second light L2 reflected by the metal layer ML and the inorganic layer IL of the optical control layer LCL are extinguished without being reflected to the user, thereby effectively reducing external light reflection. can

In one embodiment, the refractive index of the inorganic layer IL may be 2 or more and 2.5 or less. When the refractive index in the above range is satisfied, Equation 1 is satisfied, and external light reflected from the metal layer ML by destructive interference is extinguished, thereby effectively reducing reflection of external light.

As shown in FIG. 3 , when the inorganic layer IL includes a plurality of layers, the first sub-inorganic layer Sub-IL2 and the second sub-inorganic layer Sub-IL2 effectively reflect external light as there is no difference in refractive index. can reduce For example, the difference in refractive index between the first sub-inorganic layer Sub-IL1 and the second sub-inorganic layer Sub-IL2 may be 0 or more and 0.5 or less, or 0 or more and 0.25 or less. -IL1) and the second sub-inorganic layer (Sub-IL2) may have a refractive index of 2 or more and 2.5 or less.

Even if the thickness of the inorganic layer IL does not satisfy Equation 1, it is preferable that the thickness according to Equation 1 ranges from -5% to +5%. In one embodiment, the thickness of the inorganic layer IL may be, for example, greater than or equal to 10.0 nm and less than or equal to 40.0 nm.

3 , when the inorganic layer IL includes the first sub-inorganic layer Sub-IL1 and the second sub-inorganic layer Sub-IL2, the thickness and thickness of the first sub-inorganic layer Sub-IL1 and the second sub-inorganic layer Sub-IL1 are The sum of the thicknesses of the two sub-inorganic layers (Sub-IL2) may be 10.0 nm to 40.0 nm. The thickness of the first sub-inorganic layer Sub-IL1 may be greater than or equal to 9.9 nm and less than or equal to 39.9 nm, and the thickness of the second sub-inorganic layer Sub-IL2 may be greater than or equal to 0.1 nm and less than or equal to 20.0 nm.

The first sub-inorganic layer Sub-IL1 may include a metal oxide to satisfy the above conditions, for example, molitant oxide (MoTaOx, MTO). As shown in Figure 4a, it can be seen that molitant oxide (MTO) has an absorption coefficient of about 0.61 and a refractive index of about 2.2 at a wavelength of 550 nm.

The second sub-inorganic layer Sub-IL2 may include a metal oxide to satisfy the above conditions, for example, indium zinc oxide (InZnOx, IZO). As shown in FIG. 4A, it can be confirmed that indium zinc oxide (IZO) has an absorption coefficient of about 0.01 and a refractive index of about 2.2 at a wavelength of 550 nm.

The metal layer ML has an absorption coefficient of 3 to 3.5 in a wavelength range of 530 nm to 570 nm. When the metal layer ML has an absorption coefficient within the above range, as described with reference to FIG. 2 , some of the first color light transmitted to the optical control layer LCL may be recycled, and the metal layer ML The light efficiency of the display device DD can be improved because the amount of light absorbed and extinguished can be reduced.

The metal layer ML of the optical control layer LCL may have a thickness of about 5 nm or more and about 20 nm or less. When the thickness of the metal layer ML is less than about 5 nm, it is difficult to uniformly form the metal layer ML because the thickness is too thin, resulting in low fairness. In addition, the metal layer ML must have high transmittance in order to transmit the light provided from the grayscale display layer DL, and must have a transmittance of at least 40%. When the thickness of the metal layer ML exceeds about 20 nm, the metal layer ML The transmittance of (ML) may be lower than the above range.

By forming a metal layer containing silver (Ag), molybdenum (Mo), chromium (Cr) or aluminum (Al), respectively, measuring the absorption coefficient (k) at a wavelength of 550 nm, and measuring the thickness of each metal layer at the same wavelength Reflectance and transmittance were measured. The results are shown in Table 1.

thickness Ag (k: 3.3) Mo (k:3.7) Cr (k: 4.4) Al (k: 6.7) reflectivity transmittance reflectivity transmittance reflectivity transmittance reflectivity transmittance 1 nm 0.7% 98.8% 1.9% 84.6% 2.3% 82.4% 3.5% 88.8% 5 nm 6.1% 91.3% 12.2% 48.6% 15.7% 43.4% 35.8% 44.2% 10 nm 19.7% 75.8% 25.2% 28.1% 31.2% 23.0% 63.9% 17.5% 20 nm 50.7% 43.1% 41.6% 11.7% 48.8% 8.2% 82.9% 3.4% 30 nm 72.0% 21.7% 47.8% 5.3% 54.5% 3.1% 87.3% 0.7%

Referring to Table 1, it can be seen that the transmittance decreases as the thickness of the metal layer ML increases, and the transmittance decreases with the same thickness as the absorption coefficient increases.

When considering the transmittance of the metal layer ML, since the metal layer ML must satisfy the transmittance of 40% or more, the metal layer ML including silver (Ag) has a thickness range of about 5 nm or more and about 20 nm or less of the present invention. It may be applied as a metal layer (ML), and when the metal layer (ML) includes molybdenum (Mo), chromium (Cr), or aluminum (Al), when the thickness is about 5 nm, it may be applied as the metal layer (ML) of the present invention.

However, the metal layer ML containing molybdenum (Mo), chromium (Cr), or aluminum (Al) has an absorption coefficient exceeding 3.5 and the sum of reflectance and transmittance is less than 90% when the thickness is 5 nm, so the metal layer ML ) may cause optical loss due to its own optical absorption.

On the other hand, the metal layer (ML) containing silver (Ag) satisfies the range of absorption coefficient of 3 or more and 3.5 or less, and the sum of reflectance and transmittance in the entire thickness range is 90% or more, so light loss is almost not generated and internal reflection Light efficiency can be improved by recirculation of light by.

4B and 4C show an optical control layer (LCL) including an inorganic layer (IL) having a thickness of 300 Å and a metal layer (ML) including silver (Ag) having a thickness of 80 Å and disposed on the color control layer (CCL). It is a graph showing transmittance and reflectance of the laminate. The inorganic layer IL is a single layer containing molitant oxide (MTO) or a plurality of layers. When the inorganic layer IL has a plurality of layers, a first sub-inorganic layer Sub-IL1 containing molitanthaloxide (MTO) and a second sub-inorganic layer Sub-IL2 containing indium zinc oxide (IZO) includes

Referring to FIG. 4B, when the optical control layer (LCL) according to an embodiment of the present invention is included, the transmittance is 40% or more at a wavelength of 550 nm, and the light absorbed by the optical control layer (LCL) is reduced to reduce light efficiency. can be further improved.

Comparing the case where the inorganic layer IL is a single layer and the case where it is a plurality of layers, when the inorganic layer IL is a single layer, the absorption coefficient is relatively high by additionally including the second sub-inorganic layer (Sub-IL2) having a relatively low absorption coefficient in the case of a plurality of layers. Since the thickness of the first sub-inorganic layer Sub-IL1 may be reduced, transmittance of the optical control layer LCL may be further increased.

Referring to FIG. 4C , the optical control layer (LCL) according to an embodiment of the present invention may have a reflectance of 20% or less at a wavelength of 550 nm. When the reflectance of the display device is high, external light reflection occurs a lot, and the visibility and readability of the display device are deteriorated. The display device of the present invention includes the optical control layer (LCL) having a low reflectance, thereby reducing the reflection of external light in the optical control layer (LCL), thereby improving visibility.

Comparing the case where the inorganic layer IL has a single layer and the case where it has a plurality of layers, even if the thickness of the first sub-inorganic layer Sub-IL1 decreases when the inorganic layer IL has a plurality of layers, the second sub-inorganic layer Sub-IL2 Since it has a refractive index similar to that of the first sub-inorganic layer Sub-IL1, the reflectivity of the optical control layer LCL may be maintained at a level similar to that of the case where the inorganic layer IL is a single layer.

Referring to FIG. 5 , in an exemplary embodiment, the grayscale display layer DL corresponds to the first pixel area Pxa-B, the second pixel area Pxa-G, and the third pixel area Pxa-R. It may include a first pixel Px-B, a second pixel Px-G, and a third pixel Px-R.

In this embodiment, the first pixel Px-B, the second pixel Px-G, and the third pixel Px-R may have substantially the same configuration. The first pixel Px-B, the second pixel Px-G, and the third pixel Px-R may all provide the same first color light. For example, the first color light may be blue light. have.

The color control layer CCL includes a transmission filter TF and a color conversion member corresponding to the first pixel area Pxa-B, the second pixel area Pxa-G, and the third pixel area Pxa-R. CCF) may be included. In this embodiment, a color control layer (CCL) including one transmission filter (TF) and two color conversion members (CCF) corresponding to three pixel areas is illustrated as an example. The transmission filter TF can transmit the first color light, and the color conversion member CCF can convert the first color light into another color light. The other color light may be, for example, a second color light or a third color light.

6 is an equivalent circuit diagram of a pixel Px according to an embodiment of the present invention. 7 is a cross-sectional view of the display area DA of the display device DD according to an exemplary embodiment of the present invention. 8A and 8B are cross-sectional views of a display device according to an exemplary embodiment of the present invention.

According to this embodiment, the display device DD may be an organic light emitting display device. A structure in which the grayscale display layer DL, the color control layer CCL, and the optical control layer LCL described with reference to FIGS. 1 to 5 are applied to the organic light emitting display device will be described in detail with reference to FIGS. 6 to 8 .

In FIG. 6 , one gate line GL, one data line DAL, a power line PL, and a pixel Px connected thereto are illustrated. The configuration of the pixel Px is not limited to that of FIG. 6 and may be modified and implemented.

The pixel Px is a pixel driving circuit for driving the display device DD and includes a first transistor T1 (or switching transistor), a second transistor T2 (or driving transistor), and a capacitor Cst. The first power voltage ELVDD is applied to the second transistor T2 and the second power voltage ELVSS is applied to the organic light emitting diode OLED. The second power voltage ELVSS may be lower than the first power voltage ELVDD.

The first transistor T1 outputs a data signal applied to the data line DAL in response to a gate signal applied to the gate line GL. The capacitor Cst is charged with a voltage corresponding to the data signal received from the first transistor T1. The second transistor T2 is connected to the organic light emitting diode OLED. The second transistor T2 controls the driving current flowing through the organic light emitting diode OLED in response to the amount of charge stored in the capacitor Cst.

An equivalent circuit is only one example, and is not limited thereto. The pixel Px may further include a plurality of transistors and may include a larger number of capacitors. The organic light emitting diode OLED may be connected between the power line PL and the second transistor T2.

7 shows a cross section corresponding to one pixel. A circuit element layer (DL-CL), a display element layer (DL-OLED), an encapsulation member, a color control layer (CCL), and an optical control layer (LCL) are sequentially disposed on the base substrate (BL). Although the thin film encapsulation layer (TFE) is shown as an encapsulation member in this embodiment, it may be replaced with an encapsulation substrate (EAL) or the like.

In this embodiment, the base substrate BL may be a member providing a base surface on which the grayscale display layer DL is disposed. The base substrate BL may be a glass substrate, a metal substrate, or a plastic substrate. The base substrate BL may be an inorganic layer, an organic layer, or a composite material layer disposed on the substrate and is not particularly limited.

In this embodiment, the circuit element layer DL-CL includes an inorganic buffer layer BFL, a first insulating layer IS1 and a second insulating layer IS2, and a third insulating layer IS3. can do. The first insulating layer IS1 and the second insulating layer IS2 may include an inorganic material, and the type thereof is not particularly limited. The third insulating layer IS3 may include an organic material, and the type thereof is not particularly limited. In one embodiment of the present invention, the buffer film (BFL) may be selectively arranged/omitted.

A semiconductor pattern OSP1 (hereinafter referred to as first semiconductor pattern) of the first transistor T1 and a semiconductor pattern OSP2 (hereinafter referred to as second semiconductor pattern) of the second transistor T2 are disposed on the buffer layer BFL. The first semiconductor pattern OSP1 and the second semiconductor pattern OSP2 may be selected from amorphous silicon, polysilicon, or a metal oxide semiconductor.

A first insulating layer IS1 is disposed on the first semiconductor pattern OSP1 and the second semiconductor pattern OSP2. A gate electrode GE1 (hereinafter referred to as a first gate electrode) of the first transistor T1 and a gate electrode GE2 (hereinafter referred to as a second gate electrode) of the second transistor T2 are disposed on the first insulating layer IS1. . The first gate electrode GE1 and the second gate electrode GE2 may be manufactured according to the same photolithography process as the gate lines GGL (see FIG. 5A ).

A second insulating layer IS2 covering the first gate electrode GE1 and the second gate electrode GE2 is disposed on the first insulating layer IS1. On the second insulating layer IS2, the drain electrode (DE1: hereinafter referred to as first drain electrode) and the source electrode (SE1: first source electrode) of the first transistor T1 and the drain electrode (DE1) of the second transistor T2 DE2: hereinafter, a second drain electrode) and a source electrode (SE2: second source electrode) are disposed.

The first drain electrode DE1 and the first source electrode SE1 have a first through hole CH1 and a second through hole CH2 penetrating the first insulating layer IS1 and the second insulating layer IS2. are respectively connected to the first semiconductor pattern OSP1 through The second drain electrode DE2 and the second source electrode SE2 have a third through hole CH3 and a fourth through hole CH4 penetrating the first and second insulating layers IS1 and IS2. are respectively connected to the second semiconductor pattern OSP2 through Meanwhile, in another embodiment of the present invention, some of the first transistor T1 and the second transistor T2 may be modified into a bottom gate structure.

A third insulating layer IS3 covering the first drain electrode DE1, the second drain electrode DE2, the first source electrode SE1, and the second source electrode SE2 on the second insulating layer IS2. ) is placed. The third insulating layer IS3 may provide a flat surface.

A display element layer DL-OLED is disposed on the third insulating layer IS3. The display element layer DL-OLED may include a pixel defining layer PDL and an organic light emitting diode OLED.

The pixel defining layer PDL may include an organic material. An opening OP is defined in the pixel defining layer PDL. The opening OP of the pixel defining layer PDL exposes at least a portion of the first electrode EL1. In an embodiment of the present invention, the pixel defining layer (PDL) may be omitted.

The display area DA may include a pixel area Pxa (or emission area) and a peripheral area NPxa (or non-emission area) adjacent to the pixel area Pxa. The peripheral area NPxa may surround the pixel area Pxa. In this embodiment, the pixel area Pxa is defined to correspond to a partial area of the first electrode EL1 exposed by the opening OP.

In an exemplary embodiment, the pixel area Pxa may overlap at least one of the first and second transistors T1 and T2. The opening OP may be wider, and the first electrode EL1 may also be wider.

In one embodiment, the organic light emitting diode (OLED) includes a first electrode (EL1), a hole control layer (HCL), a light emitting layer (EML), an electron control layer (ECL) and a first electrode (EL1) sequentially stacked on a base substrate (BL). It may include two electrodes EL2. In one embodiment of the present invention, at least one of the hole control layer (HCL) and the electron control layer (ECL) may be omitted.

The first electrode EL1 is disposed on the third insulating layer IS3. The first electrode EL1 is connected to the second source electrode SE2 through the fifth through hole CH5 penetrating the third insulating layer IS3. The first electrode EL1 may be formed of a metal alloy or a conductive compound. The first electrode EL1 may be an anode. The first electrode EL1 may be a transmissive electrode, a transflective electrode, or a reflective electrode.

The hole control layer HCL is disposed on the first electrode EL1. The hole control layer HCL may be disposed in common in the pixel area Pxa and the peripheral area NPxa. Although not separately shown, a common layer such as the hole control layer HCL may be commonly formed in the pixel area Pxa and the peripheral area NPxa. The hole control layer (HCL) may have a single layer structure made of a single material, a single layer made of a plurality of different materials, or a multilayer structure having a plurality of layers made of a plurality of different materials. For example, the hole control layer (HCL) may have a single layer structure of a hole injection layer or a hole transport layer, or may have a single layer structure composed of a hole injection material and a hole transport material. In addition, the hole control layer HCL has a structure of a single layer made of a plurality of different materials, or a hole injection layer/hole transport layer sequentially stacked from the first electrode EL1, or a hole injection layer/hole transport layer/holes. It may have a structure of a buffer layer, a hole injection layer/hole buffer layer, a hole transport layer/hole buffer layer, or a hole injection layer/hole transport layer/electron blocking layer, but embodiments are not limited thereto. The hole control layer (HCL) of one embodiment may further include at least one of a hole buffer layer and an electron blocking layer in addition to the hole injection layer and the hole transport layer.

The light emitting layer EML is disposed on the hole control layer HCL. The light emitting layer EML may be disposed in common in the pixel area Pxa and the peripheral area NPxa. The light emitting layer EML may generate first color light, eg, blue light.

In one embodiment, the light emitting layer may be a single-layer blue light emitting layer. In addition, the light emitting layer EML may have a multilayer structure called a tandem. For example, it may be a two-layer tandem structure such as blue light emitting layer / blue light emitting layer, blue light emitting layer / yellow light emitting layer or blue light emitting layer / green light emitting layer, blue light emitting layer / blue light emitting layer / blue light emitting layer, blue light emitting layer / yellow light emitting layer / blue light emitting layer, It may be a tandem structure of three layers, such as blue light emitting layer/green light emitting layer/blue light emitting layer. In addition, each charge generation layer may be further included between the light emitting layers.

The electronic control layer ECL is disposed on the light emitting layer EML. The electron control layer (ECL) may include at least one of a hole blocking layer, an electron transport layer, and an electron injection layer, but is not limited thereto. The electronic control layer (ECL) may have a single layer structure made of a single material, a single layer made of a plurality of different materials, or a multilayer structure having a plurality of layers made of a plurality of different materials. For example, the electron control layer ECL may have a single layer structure of an electron injection layer or an electron transport layer, or may have a single layer structure composed of an electron injection material and an electron transport material. In addition, the electron control layer (ECL) has a structure of a single layer made of a plurality of different materials, or an electron transport layer/electron injection layer and a hole blocking layer/electron transport layer/electron injection layer sequentially stacked from the light emitting layer (EML). It may have a structure, but is not limited thereto.

The second electrode EL2 is disposed on the electronic control layer ECL. The second electrode EL2 is commonly disposed in the pixel areas Pxa. The second electrode EL2 has conductivity. The second electrode EL2 may be formed of a metal alloy or a conductive compound. The second electrode EL2 may be a cathode. The second electrode EL2 may be a transmissive electrode, a transflective electrode, or a reflective electrode.

A sealing member may be disposed on the second electrode EL2. The sealing member protects the display element layer DL-OLED from foreign substances such as moisture, oxygen, or dust particles. Referring to FIG. 7 , a thin film encapsulation layer (TFE) is disposed as an encapsulation member. The thin film encapsulation layer TFE is commonly disposed in the pixel areas Pxa and the peripheral area NPxa. The thin film encapsulation layer TFE directly covers the second electrode EL2. The thin film encapsulation layer TFE may include at least one inorganic layer, and the thin film encapsulation layer TFE may further include an organic layer, or may have a structure in which an inorganic layer and an organic layer are alternately repeated. In one embodiment, the inorganic layer may include an inorganic material such as aluminum oxide or silicon nitride, and the organic layer may include an acrylate-based organic material. The inorganic layer may be formed by a deposition method or the like, and the organic layer may be formed by a deposition method or a coating method.

In one embodiment of the present invention, a capping layer covering the second electrode EL2 may be further disposed between the thin film encapsulation layer TFE and the second electrode EL2. In this case, the thin film encapsulation layer (TFE) may directly cover the capping layer.

The thin film encapsulation layer TFE, the electron control layer ECL, and the hole control layer HCL of the display device DD may extend into the non-display area NDA.

In one embodiment of the present invention, the organic light emitting diode (OLED) may further include a resonance structure for controlling a resonance distance of light generated in the light emitting layer (EML). The resonance structure is disposed between the first electrode EL1 and the second electrode EL2, and the thickness of the resonance structure may be determined according to the wavelength of light generated from the light emitting layer EML.

In an exemplary embodiment, the circuit element layer DL-CL and the display element layer DL-OLED of FIG. 7 correspond to the gray scale display layer DL of FIG. 2 .

A color control layer (CCL) may be disposed on the thin film encapsulation layer (TFE). The color control layer (CCL) may include a color conversion member (CCF) and a light blocking portion (BM). The color conversion member (CCF) may overlap the organic light emitting diode (OLED).

The light blocking portion BM may be a black matrix. The light blocking portion BM may include an organic light blocking material or an inorganic light blocking material including a black pigment or dye. The light blocking portion BM may overlap the peripheral area NPxa. The light blocking portion BM may prevent light leakage and distinguish boundaries between adjacent transmission filters TF and color conversion members CCF. The light blocking portion BM may be omitted, and the color conversion member CCF may be directly disposed.

8A and 8B show three pixel areas Pxa-R, Pxa-G, and Pxa-B corresponding to FIG. 4 . In FIGS. 8A and 8B , the circuit element layer DL-CL in comparison with FIG. 7 is briefly illustrated.

Referring to FIGS. 8A and 8B , the light emitting layer EML is overlapped with the first to third pixel regions Pxa-R, Pxa-G, and Pxa-B in common, and is integrally formed. The light emitting layer EML may provide the same first color light. In an embodiment, the first color light may be blue light having a wavelength of 410 nm to 480 nm.

A thin film encapsulation layer (TFE) may be disposed on the second electrode. The thin film encapsulation layer TFE is commonly disposed on the first to third pixel areas Pxa-R, Pxa-G, and Pxa-B to encapsulate the first to third pixels. The thin film encapsulation layer (TFE) protects the organic light emitting diode (OLED) from moisture/oxygen and protects the organic light emitting diode (OLED) from foreign substances such as dust particles.

The color control layer (CCL) may be disposed on the thin film encapsulation layer (TFE). The color control layer CCL may be commonly disposed on the first to third pixel regions Pxa-R, Pxa-G, and Pxa-B.

A light blocking unit BM may be disposed between the transmission filter TF and the first color conversion member CCF1, and between the first color conversion member CCF1 and the second color conversion member CCF2, which are spaced apart from each other. Meanwhile, although not shown in FIG. 8 , at least a portion of the light blocking portion BM may be overlapped with the neighboring transmission filter TF or the color conversion members CCF1 and CCF2 .

The transmission filter TF is disposed to correspond to the first pixel area Pxa-B. The transmission filter TF does not include a light emitting body and may transmit the first color light. The transmission filter TF may include a transparent polymer resin, and may further include at least one of a blue pigment and a dye in order to improve color purity.

The first color conversion member CCF1 is disposed to correspond to the second pixel area Pxa-G and may include a first light emitting body that absorbs first color light and converts it into second color light. The second color light may be, for example, green light having a wavelength of 500 nm to 570 nm.

The second color conversion member CCF2 is disposed to correspond to the third pixel area Pxa-R and may include a second light emitting body that absorbs first color light and converts it into third color light. The third color light may be, for example, red light having a wavelength of 625 nm to 675 nm.

The first light-emitting body and the second light-emitting body may include at least a quantum dot or a quantum rod.

The quantum dot and quantum rod may be selected from a group II-VI compound, a group III-V compound, a group IV-VI compound, a group IV element, a group IV compound, and a combination thereof.

Group II-VI compounds are CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and a binary element compound selected from the group consisting of mixtures thereof, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe ternary compounds selected from the group consisting of ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof, and HgZnTeS, CdZnSeTe , CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof.

Group III-V compound is a binary element compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; A ternary compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof; and a quaternary compound selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof. Group IV-VI compounds are SnS, SnSe, SnTe, PbS, PbSe, PbTe, and a binary element compound selected from the group consisting of mixtures thereof; a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; And it may be selected from the group consisting of quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. Group IV elements may be selected from the group consisting of Si, Ge, and mixtures thereof. The group IV compound may be a binary element compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

In this case, the two-element compound, the three-element compound, or the quaternary element compound may be present in the particle at a uniform concentration or may be present in the same particle in a state in which the concentration distribution is partially different.

A quantum dot may have a core-shell structure including a core and a shell surrounding the core. Also, one quantum dot may have a core/shell structure surrounding another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases toward the center.

A quantum dot may be a particle having a size of a nanometer scale. The quantum dot may have a full width of half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, preferably about 40 nm or less, and more preferably about 30 nm or less, and color purity or color reproducibility is improved within this range. can make it In addition, since light emitted through these quantum dots is emitted in all directions, a wide viewing angle can be improved.

In addition, the shape of quantum dots is not particularly limited to those commonly used in the field, but more specifically, spherical, pyramidal, multi-arm, or cubic nanoparticles and nanotubes. , those in the form of nanowires, nanofibers, nanoplate-like particles and the like can be used.

Unlike quantum dots, which have a spherical structure, the quantum rod has a crystal structure of any one of hexagonal, wurtzite, and zinc blend. The quantum rod has a rod shape by growing crystals in a uniaxial direction, and emits light of different wavelengths depending on its size.

The quantum rod may have a core-shell structure including a core and a shell surrounding the core. In addition, it is classified as an organic binder to help dispersion. Quantum rods have a very large extinction coefficient and excellent quantum yield compared to general dyes, so they generate strong fluorescence. By adjusting the diameter of quantum rods, the wavelength of emitted visible light can be controlled. In addition, the quantum rod has the characteristic of generating linearly polarized light and has the optical characteristic of controlling light emission by separating electrons and holes when an external electric field is applied by the stark effect. Therefore, using these characteristics has the advantage of improving the light efficiency of the display device.

Quantum dots and quantum rods can change the color of light they emit according to the particle size. Accordingly, particle sizes of quantum dots or quantum rods of the first light emitting body and the second light emitting body may be different from each other. For example, the particle size of the quantum dot or quantum rod of the first light emitting body may be smaller than the particle size of the quantum dot or quantum rod of the second light emitting body. In this case, the quantum dot or quantum rod of the first light emitting body may emit light of a shorter wavelength than the quantum dot or quantum rod of the second light emitting body.

In addition, the transmission filter TF and the color conversion members CCF1 and CCF2 may further include polymer resin and scattering particles.

8A and 8B, since the optical control layer (LCL) according to the present invention has a transmittance of 40% or more, it overlaps the pixel areas Pxa-R, Pxa-G, and Pxa-B and the peripheral area NPxa. can be placed. In addition, the optical control layer LCL may be disposed to entirely overlap the display area DA and the non-display area NDA. Therefore, in the manufacturing process, the optical control layer (LCL) does not go through a separate patterning process, and since there is no need to manufacture a separate mask for patterning, processability is excellent, and productivity can be excellent by reducing manufacturing cost. In addition, the optical control layer LCL includes an inorganic layer IL including a first sub-inorganic layer Sub-IL1 and a second sub-inorganic layer Sub-IL2 having an absorption coefficient within a specific range in a wavelength range of 530 nm to 570 nm. ) and the metal layer ML, it may have a relatively high transmittance in the wavelength range of 530 nm to 570 nm compared to other wavelength ranges. Since the first color conversion member (CCF1) including a quantum dot or quantum rod emitting green light has lower light efficiency than the second color conversion member (CCF2) including a quantum dot or quantum rod emitting red light, 530 nm to 570 nm In the case of including the optical control layer (LCL) of the present invention having a relatively high transmittance in the wavelength range, it is possible to minimize the decrease in light efficiency of green light.

Referring to FIG. 8A , the inorganic layer IL includes a first sub-inorganic layer Sub-IL1 and a second sub-inorganic layer Sub-IL2, and the second sub-inorganic layer Sub-IL2 is a metal layer ( ML) and the first sub inorganic layer (Sub-IL1).

Referring to FIG. 8B , the inorganic layer IL includes a first sub-inorganic layer Sub-IL1 and a second sub-inorganic layer Sub-IL2, and the second sub-inorganic layer Sub-IL2 is a metal layer ( ML) and the first sub inorganic layer (Sub-IL1). In order to effectively reduce the reflection of external light for visibility improvement, when the color coordinates of the reflected light need to be adjusted, the second sub-inorganic layer Sub-IL2 having a relatively small absorption coefficient is used as the metal layer ML and the first sub-inorganic layer ( The color coordinates of the reflected light can be adjusted by placing it on the Sub-IL1).

9A to 9D are cross-sectional views of a display device according to an exemplary embodiment of the present invention. 10 is a graph showing the transmittance of each layer according to an embodiment of the present invention. Hereinafter, a detailed description of the same configuration as the configuration described with reference to FIGS. 1 to 8 will be omitted.

As shown in FIGS. 9A and 9B , in one embodiment, the display device DD according to the present invention may further include a band filter BF. The band filter BF may be disposed on the optical control layer LCL. The band filter BF may be disposed to overlap the second pixel and the third pixel. The band filter BF may block the first color light and transmit the second color light and the third color light. The band filter BF may be composed of one layer or may have a stacked form of a plurality of layers. For example, the band filter BF may be a single layer including a material that absorbs blue light, or may have a multilayer structure in which a low refractive index layer and a high refractive index layer are stacked.

The band filter BF may include a pigment or dye to block the first color light. Referring to FIG. 9A , in one embodiment, the band filter BF may include a first dye. The first dye may absorb light with a wavelength of 450 nm, or absorb light with a wavelength of 400 nm to 480 nm and have maximum light absorption at a wavelength of 450 nm.

Referring to FIG. 9B , the band filter BF may further include another dye to block light of a specific wavelength. In one embodiment, the band filter BF may include a second dye. The second dye may absorb light having a wavelength of 590 nm, or may have maximum light absorption at a wavelength of 590 nm while absorbing light having a wavelength of 550 nm to 630 nm.

In an exemplary embodiment, the display device DD further includes a planarization layer OC. However, the planarization layer OC may be omitted. The planarization layer OC may be disposed between the color control layer CCL and the band filter BF or between the optical control layer LCL and the band filter BF to provide a flat surface.

As shown in FIGS. 9C and 9D , in an exemplary embodiment, the display device DD may further include a low refractive index layer LR. The low refractive index layer LR may have a refractive index of 1.1 or more and 1.5 or less. When the low refractive index layer LR satisfies the refractive index within the above range, the low refractive index layer LR totally reflects some of the first color light escaping from the color control layer CCL according to Snell's law to return the color control layer ( CCL). In the display device DD according to the present invention, light efficiency may be improved through recycling of light utilizing such internal reflection.

The low refractive index layer LR may include a material having a refractive index of 1.1 or more and 1.5 or less or 1.2 or more and 1.3 or less. For example, the low refractive index layer LR may include hollow silica, airgel, or porous particles including pores. can include Specifically, the porous particle may be an inorganic particle or an organic particle, and may be a particle including a plurality of irregular pores.

The low refractive index layer LR may be disposed on the optical control layer LCL. In one embodiment, as shown in FIG. 9C, the low refractive index layer LR may be disposed directly on the optical control layer LCL, or as shown in FIG. 9D, the low refractive index layer LR is It may be disposed on the optical control layer (LCL) by the adhesive layer (PSA).

Referring to FIG. 9D , in one embodiment, the adhesive layer PSA may include a second dye to block light in a wavelength range of 550 nm to 630 nm.

As shown in FIGS. 9A and 9C , the display device DD according to the present invention may further include an absorption layer AL. The absorption layer AL may be disposed on the optical control layer LCL. The absorption layer AL may include a second dye to block light in a wavelength range of 550 nm to 630 nm.

10 is a transmittance of an optical control layer (LCL) according to an embodiment of the present invention, a band filter (BF) including a first dye, and an absorption layer (AL) including a second dye in a wavelength range of 380 nm to 780 nm. is a graph of each measurement. Since the optical control layer (LCL) composed of a metal layer containing silver (Ag) and an inorganic layer containing molitant oxide (MoTaOx) has a light transmittance of 50% or more in the wavelength region, the color control layer (CCL) emits It can be confirmed that light can be transmitted effectively. It can be seen that the band filter BF can effectively block blue light because light of a wavelength of 400 nm to 480 nm is hardly transmitted. It can be confirmed that the absorption layer AL can absorb light having a wavelength ranging from at least 580 nm to 600 nm, or can have minimum transmittance at 590 nm, so that light of 590 nm can be effectively blocked.

The band filter (BF), absorption layer (AL), low refractive index layer (LR), and adhesive layer (PSA) may be additionally included or omitted in the display device (DD) according to the present invention, and in FIGS. 9A to 9D Other than shown, it may be arranged on the optical control layer (LCL) in various orders.

11 to 13 are cross-sectional views of a display device according to an exemplary embodiment of the present invention. Hereinafter, a detailed description of the same configuration as the display device described with reference to FIGS. 1 to 10 will be omitted.

The display device DD according to this embodiment may include an encapsulation substrate EAL as an encapsulation member. The sealing substrate EAL may be coupled to the base substrate BL by a seal member SL disposed along an edge on a plane.

Referring to FIGS. 11 and 12 , the encapsulation substrate EAL is disposed on the base substrate BL and may cover the display area DA. The encapsulation substrate EAL may be a substrate made of glass or plastic. The seal member SL may include a sealant, and for example, the sealant may include a glass frit. The seal member SL may block the organic light emitting diode OLED from being exposed to external moisture, air, or the like along with the encapsulation substrate EAL.

The seal member SL has a predetermined thickness between the base substrate BL and the sealing substrate EAL. Accordingly, the inner space AR is formed by the base substrate BL, the sealing substrate EAL, and the seal member SL. The inner space AR may be formed as a vacuum. However, it is not limited thereto, and the inner space AR may be filled with nitrogen (N ₂ ) or an insulating material. Although not shown, the organic light emitting diode DL-OLED and the circuit element layer DL-CL may contact one side of the seal member SL.

As shown in FIG. 11 , a color control layer (CCL) and an optical control layer (LCL) may be disposed on the upper surface of the encapsulation substrate (EAL). However, it is not limited thereto, and components described with reference to FIGS. 9A to 9D may be additionally disposed on the upper surface of the sealing substrate EAL. For example, a band filter BF, an absorption layer AL, or a low refractive index layer LR may be further disposed on the optical control layer LCL.

As shown in FIG. 12 , an optical control layer LCL and a color control layer CCL may be disposed on the lower surface of the encapsulation substrate EAL. The optical control layer (LCL) may be disposed between the encapsulation substrate (EAL) and the color control layer (CCL). However, it is not limited thereto, and components described with reference to FIGS. 9A to 9D may be additionally disposed on the lower surface of the sealing substrate EAL. For example, a band filter BF, an absorption layer AL, or a low refractive index layer LR may be further disposed on the optical control layer LCL.

As shown in FIG. 9A , when the display device DD further includes a band filter BF and an absorption layer AL, the band filter BF and the absorption layer AL are formed by the sealing substrate EAL and the optical control layer LCL. can be placed in between. Alternatively, the band filter BF may be disposed between the encapsulation substrate EAL and the optical control layer LCL, and the absorption layer AL may be disposed on the upper surface of the encapsulation substrate EAL. Alternatively, the band filter BF and the absorption layer AL may be disposed on the upper surface of the encapsulation substrate EAL.

As shown in FIG. 9C , when the display device DD further includes an absorption layer AL and a low refractive index layer LR, the absorption layer AL and the low refractive index layer LR include the encapsulation substrate EAL and the optical control layer ( LCL) can be placed between them. Alternatively, the absorption layer AL may be disposed between the encapsulation substrate EAL and the optical control layer LCL, and the low refractive index layer LR may be disposed on the upper surface of the encapsulation substrate EAL. Alternatively, the absorption layer AL and the low refractive index layer LR may be disposed on the upper surface of the encapsulation substrate EAL.

13 is a cross-sectional view of a display device according to an exemplary embodiment. 13 shows a display device DD including an encapsulation substrate EAL. Referring to FIG. 13 , an absorption layer AL and a low refractive index layer LR are disposed on the upper surface of the encapsulation substrate EAL. A band filter (BF), an optical control layer (LCL), and a color control layer (CCL) are sequentially disposed on the lower surface of the encapsulation substrate (EAL). The band filter BF may include a light blocking portion BM. In the color control layer CCL, the transmission filter TF, the first color conversion member CCF1 and the second color conversion member CCF2 may be spaced apart from each other without a light blocking portion BM.

14 is a cross-sectional view of a display device according to an exemplary embodiment of the present invention. 15A is an equivalent circuit diagram of a pixel according to an embodiment of the present invention. 15B is a cross-sectional view of a display panel according to an exemplary embodiment of the present invention. 16A to 16C are cross-sectional views of a display device according to an exemplary embodiment. Hereinafter, a detailed description of the same configuration as the display device described with reference to FIGS. 1 to 13 will be omitted.

According to this embodiment, the display device DD may be a liquid crystal display device. A structure in which the gradation display layer (DL), color control layer (CCL), and optical control layer (LCL) described with reference to FIGS. 1 to 5 are applied to the liquid crystal display will be described in detail with reference to FIGS. 14 to 16C.

As shown in FIG. 14 , the display device DD includes a light source BLU and a display panel DP. The light source BLU provides a first color light to the display panel DP. Although briefly illustrated in FIG. 14 , the light source BLU may include a light emitting element and a light guide plate. In one embodiment, the light guide plate may be omitted.

The display panel DP includes a first base substrate BL1 and a second base substrate BL2 disposed apart from each other, a liquid crystal layer LC disposed between the first base substrate and the second base substrate, and a circuit layer CL. ), a color control layer (CCL) and an optical control layer (LCL).

The second base substrate BL2 includes a lower surface adjacent to the liquid crystal layer LC and an upper surface opposite thereto, and an optical control layer LCL and a color control layer CCL are formed on the lower surface of the second base substrate BL2. ) can be placed. The color control layer CCL may be disposed between the second base substrate BL2 and the liquid crystal layer LC, and the optical control layer LCL may be disposed between the second base substrate BL2 and the color control layer CCL. can be placed. However, it is not limited thereto, and components described with reference to FIGS. 9A to 9D may be additionally disposed. For example, a band filter BF, an absorption layer AL, or a low refractive index layer LR may be further disposed on the optical control layer LCL.

9A , when the display device DD further includes a band filter BF and an absorption layer AL, the band filter BF is disposed between the second base substrate BL2 and the optical control layer LCL. The absorption layer AL may be disposed between the band filter BF and the second base substrate BL2. Alternatively, the band filter BF may be disposed between the second base substrate BL2 and the optical control layer LCL, and the absorption layer AL may be disposed on the upper surface of the second base substrate BL2. Alternatively, the band filter BF and the absorption layer AL may be disposed on the upper surface of the second base substrate BL2.

As shown in FIG. 9C , when the display device DD further includes an absorption layer AL and a low refractive index layer LR, the absorption layer AL is disposed between the second base substrate BL2 and the optical control layer LCL. The low refractive index layer LR may be disposed between the absorption layer AL and the second base substrate BL2. Alternatively, the absorption layer AL may be disposed between the second base substrate BL2 and the optical control layer LCL, and the low refractive index layer LR may be disposed on the upper surface of the second base substrate BL2. Alternatively, the absorption layer AL and the low refractive index layer LR may be disposed on the upper surface of the second base substrate BL2.

In the display device DD, the light source BLU, the circuit layer CL, and the liquid crystal layer LC correspond to the grayscale display layer DL of FIG. 2 .

Hereinafter, the circuit layer CL and the display panel DP will be described in detail with reference to FIGS. 15A and 15B.

15A illustrates a pixel Px connected to one gate line GL and one data line DAL. The configuration of the pixel Px is not limited to that of FIG. 15A and may be modified and implemented.

The pixel Px may include a thin film transistor (T, hereinafter referred to as a transistor), a liquid crystal capacitor Clc, and a storage capacitor Cst. The liquid crystal capacitor Clc may correspond to a display element, and the transistor T and the storage capacitor Cst may be a pixel driving circuit. The number of transistors T and storage capacitors Cst may be changed according to the operation mode of the liquid crystal display panel.

The liquid crystal capacitor Clc charges the pixel voltage output from the transistor T. The arrangement of liquid crystal directors included in the liquid crystal layer LC is changed according to the amount of charge charged in the liquid crystal capacitor Clc. In other words, the liquid crystal director is controlled by an electric field formed between two electrodes of the liquid crystal capacitor. Light incident to the liquid crystal layer is transmitted or blocked according to the arrangement of the liquid crystal director.

The storage capacitor Cst is connected in parallel to the liquid crystal capacitor Clc. The storage capacitor Cst maintains the alignment of the liquid crystal director for a certain period.

The liquid crystal capacitor Clc includes a pixel electrode and a common electrode. The storage capacitor Cst includes a pixel electrode and a portion of the storage line STL overlapping the pixel electrode.

15B shows a cross section of the display panel DP. The first base substrate BL1 and the second base substrate BL2 may each independently be a polymer substrate, a plastic substrate, a glass substrate, or a quartz substrate. The first base substrate BL1 and the second base substrate BL2 may be transparent insulating substrates. Each of the first base substrate BL1 and the second base substrate BL2 may be rigid. Each of the first base substrate BL1 and the second base substrate BL2 may be flexible.

A circuit layer CL is disposed on one surface of the first base substrate BL1. The circuit layer CL may include a gate line GL, a storage line STL, and an electrode forming an electric field in the liquid crystal layer. The gate electrode GE protrudes from the gate lines GGL or is provided on a portion of the gate lines GGL.

The transistor T is spaced apart from the gate electrode GE connected to the gate line GL, the activation part overlapping the gate electrode GE, the source electrode SE connected to the data line DAL, and the source electrode SE. and a drain electrode DE disposed thereon.

The semiconductor pattern SM is provided on the gate insulating layer GI. The semiconductor pattern SM is provided on the gate electrode GE with the gate insulating layer GI interposed therebetween. A portion of the semiconductor pattern SM overlaps the gate electrode GE. The semiconductor pattern SM includes an active pattern (not shown) provided on the gate insulating layer GI and an ohmic contact layer (not shown) formed on the active pattern. An ohmic contact layer (not shown) makes ohmic contact between the active pattern and the source electrode SE and the drain electrode DE.

The source electrode SE is provided branched from the data lines DAL. The source electrode SE is formed on an ohmic contact layer (not shown) and partially overlaps the gate electrode GE. The data data line DAL may be disposed in a region of the gate insulating layer GI where the semiconductor pattern SM is not disposed.

The drain electrode DE is spaced apart from the source electrode SE with the semiconductor pattern SM interposed therebetween. The drain electrode DE is formed on an ohmic contact layer (not shown) and partially overlaps the gate electrode GE.

Accordingly, the upper surface of the active pattern between the source electrode SE and the drain electrode DE is exposed, and a conduction channel ( It becomes a channel part constituting a conductive channel. The source electrode SE and the drain electrode DE overlap a portion of the semiconductor pattern SM in an area excluding the channel portion formed to be spaced apart between the source electrode SE and the drain electrode DE.

The pixel electrode PE is connected to the drain electrode DE with the passivation layer PSV interposed therebetween. The pixel electrode PE partially overlaps the storage line SLn, the first branch electrode, and the second branch electrode to form a storage capacitor.

The passivation layer PSV covers the source electrode SE, the drain electrode DE, the channel portion, and the gate insulating layer GI, and has a contact hole CH exposing a part of the drain electrode DE. The passivation layer PSV may include, for example, silicon nitride or silicon oxide.

The pixel electrode PE is connected to the drain electrode DE through a contact hole CH formed in the passivation layer PSV. The pixel electrode PE is formed of a transparent conductive material.

An optical control layer LCL is disposed on the lower surface of the second base substrate BL2. A color control layer (CCL) may be disposed below the optical control layer (LCL).

A common electrode CE may be disposed under the color control layer CCL. Although the common electrode CE is illustrated as being directly disposed on the lower surface of the color control layer CCL, it is not limited thereto. An insulating layer may be further disposed between the common electrode CE and the color control layer CCL. The common electrode CE controls the liquid crystal layer LC by forming an electric field together with the pixel electrode PE. In one embodiment of the present invention, it has been disclosed that the common electrode CE is disposed on the second base substrate BL2, but is not limited thereto, and the common electrode CE is disposed on the first base substrate BL1. It could be.

The liquid crystal layer LC is disposed between the first base substrate BL1 and the second base substrate BL2 and includes a plurality of liquid crystal molecules. The liquid crystal layer LC may be provided by arranging liquid crystal molecules having dielectric anisotropy. For the liquid crystal layer LC, any commonly used liquid crystal molecule may be used without particular limitation, and for example, an alkenyl-based liquid crystal compound or an alkoxy-based liquid crystal compound may be used as the liquid crystal molecule. The liquid crystal molecules used in the examples may have negative dielectric constant anisotropy, but the examples are not limited thereto. For example, liquid crystal molecules having positive dielectric constant anisotropy may be used.

Meanwhile, although not shown, one or more insulating layers IS may be disposed on one surface of the first base substrate BL1 or the second base substrate BL2 . In addition, an alignment layer may be further disposed between the first base substrate BL1 and the liquid crystal layer LC or between the second base substrate BL2 and the liquid crystal layer LC. The alignment layer may control an alignment angle of liquid crystal injected into the liquid crystal layer LC. Also, the first base substrate BL1 and the second base substrate BL2 of the display device may be turned over.

Although the liquid crystal display panel of VA (Vertical Alignment) mode has been described as an example in this embodiment, in one embodiment of the present invention, IPS (in-plane switching) mode, FFS (fringe-field switching) mode, PLS (Plane to A liquid crystal display panel of Line Switching (Line Switching) mode, Super Vertical Alignment (SVA) mode, and Surface-Stabilized Vertical Alignment (SS-VA) mode may be applied.

16A to 16C are cross-sectional views illustrating a stacked structure of a display device according to an exemplary embodiment of the present invention. In FIGS. 16A to 16C , the circuit layer CL is briefly illustrated compared to FIG. 15B. Hereinafter, a detailed description of the same configuration as the display device described with reference to FIGS. 1 to 15B will be omitted.

As shown in FIG. 16A , the color control layer CCL and the optical control layer LCL may be disposed on the upper surface of the second base substrate BL2. However, the present invention is not limited thereto, and components described with reference to FIGS. 9A to 9D may be additionally disposed on the upper surface of the second base substrate BL2 . For example, a band filter BF, an absorption layer AL, or a low refractive index layer LR may be further disposed on the optical control layer LCL.

As shown in FIGS. 16B and 16C , the light source BLU may include a light emitting device and may not include a light guide plate. The first base substrate BL1 serves as a light guide plate. A light emitting device provides light to the side of the first base substrate BL1.

The display device illustrated in FIG. 16B is different from the display device illustrated in FIG. 14 only in the configuration of the light source BLU, and other configurations may be equally applied. The display device shown in FIG. 16C is different from the display device shown in FIG. 16A only in the configuration of the light source BLU, and other configurations may be equally applied.

Meanwhile, although not shown in the drawings, the light source BLU may further include at least one optical sheet for condensing and supplying light to the liquid crystal layer LC. The optical sheet may be a light collecting sheet for concentrating and supplying light generated by the light emitting devices to a front direction of the liquid crystal layer LC. For example, the optical sheet may be a light collecting sheet having a prism pattern.

Although the above has been described with reference to preferred embodiments of the present invention, those skilled in the art or those having ordinary knowledge in the art do not deviate from the spirit and technical scope of the present invention described in the claims to be described later. It will be understood that the present invention can be variously modified and changed within the scope not specified.

Therefore, the technical scope of the present invention is not limited to the contents described in the detailed description of the specification, but should be defined by the claims.

DD: display device DL: gradation display layer
CCL: color control layer TF: transmission filter
CCF: color conversion member LCL: optical control layer

Claims (20)

a gradation display layer providing first color light;
a color control layer disposed on the gradation display layer and including a transmission filter that transmits the first color light and a color conversion member that converts the first color light into another color light; and
An optical control layer disposed on the color control layer and including a metal layer and an inorganic layer having an absorption coefficient of 3 or more and 3.5 or less in a wavelength range of 530 nm to 570 nm;
The inorganic layer includes a first sub inorganic layer having an absorption coefficient of 0.3 or more and 1 or less in a wavelength range of 530 nm to 570 nm and a second sub inorganic layer having an absorption coefficient of 0.001 or more and 0.2 or less in a wavelength range of 530 nm to 570 nm.
According to claim 1,
The inorganic layer is a display device satisfying Equation 1 below:
[Equation 1]

In Equation 1, λ is a wavelength of 530 nm to 570 nm, m is 0 and a natural number, Ta ₁ is the thickness of the first sub-inorganic layer, Ta ₂ is the thickness of the second sub-inorganic layer, and n ₁ is A refractive index of the first sub-inorganic layer at the λ wavelength, and n ₂ is a refractive index of the second sub-inorganic layer at the λ wavelength.
According to claim 2,
A display device wherein a difference in refractive index between the first sub-inorganic layer and the second sub-inorganic layer is 0 or more and 0.5 or less.
According to claim 2,
The refractive index of the first sub-inorganic layer is 2 or more and 2.5 or less, and the refractive index of the second sub-inorganic layer is 2 or more and 2.5 or less.
According to claim 2,
The thickness of the first sub-inorganic layer is 9.9 nm or more and 39.9 nm or less, and the thickness of the second sub-inorganic layer is 0.1 nm or more and 20.0 nm or less.
According to claim 2,
The display device of claim 1, wherein the sum of the thicknesses of the first sub-inorganic layer and the thicknesses of the second sub-inorganic layer is greater than or equal to 10.0 nm and less than or equal to 40.0 nm.
According to claim 1,
The first sub-inorganic layer includes molitantaloxide, and the second sub-inorganic layer includes indium zinc oxide.
According to claim 1,
The second sub-inorganic layer is disposed between the metal layer and the first sub-inorganic layer.
According to claim 1,
The second sub-inorganic layer is disposed on the metal layer and the first sub-inorganic layer.
According to claim 1,
The display device of claim 1 , wherein the metal layer includes silver.
According to claim 1,
The color conversion member is a display device including at least a quantum dot or a quantum rod.
According to claim 1,
The gray scale display layer includes a first pixel corresponding to the transmission filter, a second pixel corresponding to the color conversion member, and a third pixel;
The color conversion member includes a first color conversion member corresponding to the second pixel and converting the first color light into second color light, and a second color conversion member corresponding to the third pixel and converting the first color light into third color light. Including a color conversion member,
The optical control layer overlaps the first pixel, the second pixel, and the third pixel.
According to claim 12,
and a band filter disposed on the color control layer, overlapping the second pixel and the third pixel, and blocking the first color light and transmitting the second color light and the third color light.
According to claim 12,
The first pixel, the second pixel, and the third pixel include a first organic light emitting diode, a second organic light emitting diode, and a third organic light emitting diode, respectively;
The light emitting layers of the first organic light emitting diode, the second organic light emitting diode, and the third organic light emitting diode have an integral shape.
According to claim 1,
and an absorption layer disposed on the optical control layer and absorbing light having a wavelength in a range of at least 580 nm to 600 nm.
According to claim 1,
A display device further comprising a low refractive index layer disposed on the optical control layer and having a refractive index of 1.1 or more and 1.5 or less.
base substrate;
first to third pixels disposed on the base substrate and including organic light emitting diodes each generating a first color light;
a sealing member sealing the first to third pixels;
A transmission filter corresponding to the first pixel and transmitting the first color light, a first color conversion member corresponding to the second pixel and converting the first color light into second color light, and corresponding to the third pixel and a color control layer including a second color conversion member that converts first color light into third color light and disposed on the first to third pixels; and
An optical control layer comprising a metal layer and an inorganic layer having an absorption coefficient of 3 or more and 3.5 or less in the wavelength range of 530 nm to 570 nm, disposed on the color control layer, and overlapping the first to third pixels; includes,
The inorganic layer includes a first sub inorganic layer having an absorption coefficient of 0.3 or more and 1 or less in a wavelength range of 530 nm to 570 nm and a second sub inorganic layer having an absorption coefficient of 0.001 or more and 0.2 or less in a wavelength range of 530 nm to 570 nm.
a first base substrate receiving first color light;
a second base substrate spaced apart from the first base substrate;
first to third pixels disposed between the first base substrate and the second base substrate and including a liquid crystal layer, a pixel electrode forming an electric field in the liquid crystal layer, and a common electrode;
A transmission filter for transmitting the first color light that has passed through the first pixel, a first color conversion member that converts the first color light that has passed through the second pixel into a second color light, and a light that has passed through the third pixel a color control layer disposed on the first to third pixels, including a second color conversion member that converts light of one color into light of a third color; and
An optical control layer comprising a metal layer and an inorganic layer having an absorption coefficient of 3 or more and 3.5 or less in the wavelength range of 530 nm to 570 nm, disposed on the color control layer, and overlapping the first to third pixels; includes,
The inorganic layer includes a first sub inorganic layer having an absorption coefficient of 0.3 or more and 1 or less in a wavelength range of 530 nm to 570 nm and a second sub inorganic layer having an absorption coefficient of 0.001 or more and 0.2 or less in a wavelength range of 530 nm to 570 nm.
According to claim 18,
The color control layer is disposed on the lower surface of the second base substrate, and the optical control layer is disposed between the lower surface of the second base substrate and the color control layer.
According to claim 18,
The color control layer and the optical control layer are disposed on the upper surface of the second base substrate.

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